Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105092) > Сторінка 408 з 1752
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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RP1E075RPTR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 7.5A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RP1E100XNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RP1E125XNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 12.5A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RP1L080SNTR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 8A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RQ3E100MNTB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A HSMT8 |
на замовлення 5261 шт: термін постачання 21-31 дні (днів) |
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RQ3E130MNTB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 13A 8HSMT |
на замовлення 2969 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RQ3E150MNTB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 15A 8HSMT |
на замовлення 2355 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RSB33VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 25VWM UMD2Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Packaging: Cut Tape (CT) Part Status: Not For New Designs Power Line Protection: No Voltage - Breakdown (Min): 29.7V Bidirectional Channels: 1 Supplier Device Package: UMD2 Voltage - Reverse Standoff (Typ): 25V Capacitance @ Frequency: 30pF @ 1MHz Applications: General Purpose Type: Zener |
на замовлення 148028 шт: термін постачання 21-31 дні (днів) |
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RSB36VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 27VWM UMD2Part Status: Not For New Designs Power Line Protection: No Voltage - Breakdown (Min): 32.4V Bidirectional Channels: 1 Supplier Device Package: UMD2 Voltage - Reverse Standoff (Typ): 27V Capacitance @ Frequency: 30pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Packaging: Cut Tape (CT) |
на замовлення 6064 шт: термін постачання 21-31 дні (днів) |
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RSB39VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 30VWM UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: UMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 35.1V Power Line Protection: No Part Status: Not For New Designs |
на замовлення 83959 шт: термін постачання 21-31 дні (днів) |
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RSB5.6SMT2N | Rohm Semiconductor |
Description: TVS DIODE 2.5VWM EMD2Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) Part Status: Not For New Designs Power Line Protection: No Power - Peak Pulse: 10W Voltage - Breakdown (Min): 4.76V Bidirectional Channels: 1 Supplier Device Package: EMD2 Voltage - Reverse Standoff (Typ): 2.5V Applications: General Purpose |
на замовлення 23974 шт: термін постачання 21-31 дні (днів) |
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RSB6.8CST2RA | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM VMN2 |
на замовлення 7111 шт: термін постачання 21-31 дні (днів) |
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RSB6.8ZST2N | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM GMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSJ10HN06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 100A LPTS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSJ250P10TL | Rohm Semiconductor |
Description: MOSFET P-CH 100V 25A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
на замовлення 8540 шт: термін постачання 21-31 дні (днів) |
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RSJ400N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 40A LPTS |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RSJ400N10TL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 40A LPTSVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.35W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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RSJ550N10TL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 55A LPTSCurrent - Continuous Drain (Id) @ 25°C: 55A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V |
на замовлення 886 шт: термін постачання 21-31 дні (днів) |
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RSJ650N10TL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 65A LPTSQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 658 шт: термін постачання 21-31 дні (днів) |
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RSJ800N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 80A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 60 V Supplier Device Package: LPTS |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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RSQ015P10TR | Rohm Semiconductor |
Description: MOSFET P-CH 100V 1.5A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RSR010N10TL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 1A TSMT3FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RF301B2STL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A CPD |
на замовлення 4365 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RF501B2STL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 5A CPD |
на замовлення 2050 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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1SS355VMTE-17 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 100MA UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 1415613 шт: термін постачання 21-31 дні (днів) |
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2SA2048KT146Q | Rohm Semiconductor |
Description: TRANS PNP 30V 1A SMT3Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: SMT3 Frequency - Transition: 350MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 4667 шт: термін постачання 21-31 дні (днів) |
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2SA2088T106Q | Rohm Semiconductor |
Description: TRANS PNP 60V 0.5A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Frequency - Transition: 400MHz Supplier Device Package: UMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 200 mW |
на замовлення 4909 шт: термін постачання 21-31 дні (днів) |
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2SA2094TLQ | Rohm Semiconductor |
Description: TRANS PNP 60V 2A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 300MHz Supplier Device Package: TSMT3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
на замовлення 18918 шт: термін постачання 21-31 дні (днів) |
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2SA2119KT146 | Rohm Semiconductor |
Description: TRANS PNP 12V 0.5A SMT3Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: SMT3 Frequency - Transition: 260MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 468 шт: термін постачання 21-31 дні (днів) |
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2SC5824T100R | Rohm Semiconductor |
Description: TRANS NPN 60V 3A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V Frequency - Transition: 200MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
на замовлення 264 шт: термін постачання 21-31 дні (днів) |
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2SC5866TLQ | Rohm Semiconductor |
Description: TRANS NPN 60V 2A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TSMT3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SC5866TLR | Rohm Semiconductor |
Description: TRANS NPN 60V 2A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TSMT3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
на замовлення 21924 шт: термін постачання 21-31 дні (днів) |
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2SC5868TLQ | Rohm Semiconductor |
Description: TRANS NPN 60V 0.5A TSMT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 mA Part Status: Not For New Designs Supplier Device Package: TSMT3 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
на замовлення 6761 шт: термін постачання 21-31 дні (днів) |
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2SC5868TLR | Rohm Semiconductor |
Description: TRANS NPN 60V 0.5A TSMT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 mA Part Status: Not For New Designs Supplier Device Package: TSMT3 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SD2703TL | Rohm Semiconductor |
Description: TRANS NPN 30V 1A TUMT3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TUMT3 Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA114YUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FResistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Resistors Included: R1 and R2 Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
на замовлення 2550 шт: термін постачання 21-31 дні (днів) |
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DTC114ECAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 784 шт: термін постачання 21-31 дні (днів) |
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DTC114EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 1729 шт: термін постачання 21-31 дні (днів) |
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DTC114EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 3358 шт: термін постачання 21-31 дні (днів) |
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DTC114YUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FResistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 70 mA Part Status: Not For New Designs Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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DTC123JUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FResistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
на замовлення 2960 шт: термін постачання 21-31 дні (днів) |
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DTC124EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
на замовлення 11239 шт: термін постачання 21-31 дні (днів) |
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DTC143ZEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 20799 шт: термін постачання 21-31 дні (днів) |
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DTC143ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 486 шт: термін постачання 21-31 дні (днів) |
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DTC144EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 2068 шт: термін постачання 21-31 дні (днів) |
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DTC144EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 4949 шт: термін постачання 21-31 дні (днів) |
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DTC623TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 20V 0.6A SMT3Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 150 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 7709 шт: термін постачання 21-31 дні (днів) |
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DTC643TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 20V 0.6A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistors Included: R1 Only |
на замовлення 1195 шт: термін постачання 21-31 дні (днів) |
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EM6M2T2R | Rohm Semiconductor |
Description: MOSFET N/P-CH 20V 0.2A EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
на замовлення 52120 шт: термін постачання 21-31 дні (днів) |
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EMB3T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
на замовлення 6604 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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EMN11T2R | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD6Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: EMD6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 10035 шт: термін постачання 21-31 дні (днів) |
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FMA5AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Part Status: Active Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 47kOhms |
на замовлення 5540 шт: термін постачання 21-31 дні (днів) |
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FMA7AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5Part Status: Not For New Designs Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 3003 шт: термін постачання 21-31 дні (днів) |
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FMP1T148 | Rohm Semiconductor |
Description: BRIDGE RECT 1PHASE 80V 25MA SMD5Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA Current - Average Rectified (Io): 25 mA Voltage - Peak Reverse (Max): 80 V Supplier Device Package: SMD5 Technology: Standard Operating Temperature: 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 1928 шт: термін постачання 21-31 дні (днів) |
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FMY5T148 | Rohm Semiconductor |
Description: TRANS NPN/PNP 120V 50MA SMT5DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 120V Current - Collector (Ic) (Max): 50mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: 1 NPN, 1 PNP (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Supplier Device Package: SMT5 Frequency - Transition: 140MHz |
на замовлення 2530 шт: термін постачання 21-31 дні (днів) |
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IMH23T110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6Part Status: Active Supplier Device Package: SMT6 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 600mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IMH8AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6Supplier Device Package: SMT6 Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 79 шт: термін постачання 21-31 дні (днів) |
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MMSTA28T146 | Rohm Semiconductor |
Description: TRANS NPN DARL 80V 0.3A SMT3Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 300 mA Supplier Device Package: SMT3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2510B | Rohm Semiconductor |
Description: DIODE ZENER 10.3V 1W PMDSCurrent - Reverse Leakage @ Vr: 10 µA @ 7 V Power - Max: 1 W Part Status: Not For New Designs Supplier Device Package: PMDS Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 10.3 V Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±6% Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2511B | Rohm Semiconductor |
Description: DIODE ZENER 11.5V 1W PMDS |
на замовлення 1720 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| RP1E075RPTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A MPT6
Description: MOSFET P-CH 30V 7.5A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| RP1E100XNTR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A MPT6
Description: MOSFET N-CH 30V 10A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| RP1E125XNTR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A MPT6
Description: MOSFET N-CH 30V 12.5A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| RP1L080SNTR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A MPT6
Description: MOSFET N-CH 60V 8A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| RQ3E100MNTB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HSMT8
Description: MOSFET N-CH 30V 10A HSMT8
на замовлення 5261 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.37 грн |
| 10+ | 70.07 грн |
| 100+ | 54.63 грн |
| 500+ | 42.35 грн |
| 1000+ | 33.43 грн |
| RQ3E130MNTB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8HSMT
Description: MOSFET N-CH 30V 13A 8HSMT
на замовлення 2969 шт:
термін постачання 21-31 дні (днів)
| RQ3E150MNTB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
Description: MOSFET N-CH 30V 15A 8HSMT
на замовлення 2355 шт:
термін постачання 21-31 дні (днів)
| RSB33VTE-17 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD2
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 29.7V
Bidirectional Channels: 1
Supplier Device Package: UMD2
Voltage - Reverse Standoff (Typ): 25V
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Type: Zener
Description: TVS DIODE 25VWM UMD2
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 29.7V
Bidirectional Channels: 1
Supplier Device Package: UMD2
Voltage - Reverse Standoff (Typ): 25V
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Type: Zener
на замовлення 148028 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.35 грн |
| 15+ | 20.67 грн |
| 100+ | 14.07 грн |
| 500+ | 9.90 грн |
| 1000+ | 7.43 грн |
| RSB36VTE-17 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 27VWM UMD2
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 32.4V
Bidirectional Channels: 1
Supplier Device Package: UMD2
Voltage - Reverse Standoff (Typ): 27V
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
Description: TVS DIODE 27VWM UMD2
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 32.4V
Bidirectional Channels: 1
Supplier Device Package: UMD2
Voltage - Reverse Standoff (Typ): 27V
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
на замовлення 6064 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 15+ | 20.74 грн |
| 100+ | 12.86 грн |
| 500+ | 9.79 грн |
| 1000+ | 7.80 грн |
| RSB39VTE-17 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 30VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 30VWM UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 83959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 19+ | 16.34 грн |
| 100+ | 10.31 грн |
| 500+ | 7.22 грн |
| 1000+ | 6.42 грн |
| RSB5.6SMT2N |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 2.5VWM EMD2
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 10W
Voltage - Breakdown (Min): 4.76V
Bidirectional Channels: 1
Supplier Device Package: EMD2
Voltage - Reverse Standoff (Typ): 2.5V
Applications: General Purpose
Description: TVS DIODE 2.5VWM EMD2
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 10W
Voltage - Breakdown (Min): 4.76V
Bidirectional Channels: 1
Supplier Device Package: EMD2
Voltage - Reverse Standoff (Typ): 2.5V
Applications: General Purpose
на замовлення 23974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.45 грн |
| 13+ | 23.13 грн |
| 100+ | 12.27 грн |
| 500+ | 7.57 грн |
| 1000+ | 5.15 грн |
| 2000+ | 4.65 грн |
| RSB6.8CST2RA |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Description: TVS DIODE 3.5VWM VMN2
на замовлення 7111 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.75 грн |
| 10+ | 30.30 грн |
| 100+ | 20.63 грн |
| 500+ | 14.52 грн |
| 1000+ | 10.89 грн |
| 2000+ | 9.98 грн |
| RSB6.8ZST2N |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Description: TVS DIODE 3.5VWM GMD2
товару немає в наявності
В кошику
од. на суму грн.
| RSJ10HN06TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 100A LPTS
Description: MOSFET N-CH 60V 100A LPTS
товару немає в наявності
В кошику
од. на суму грн.
| RSJ250P10TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
на замовлення 8540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 280.52 грн |
| 10+ | 176.93 грн |
| 100+ | 124.09 грн |
| 500+ | 96.82 грн |
| RSJ400N06TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 40A LPTS
Description: MOSFET N-CH 60V 40A LPTS
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
| RSJ400N10TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 40A LPTS
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 40A LPTS
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 334.76 грн |
| 10+ | 213.79 грн |
| RSJ550N10TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 55A LPTS
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
Description: MOSFET N-CH 100V 55A LPTS
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
на замовлення 886 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 347.93 грн |
| 10+ | 239.08 грн |
| 100+ | 170.85 грн |
| 500+ | 133.01 грн |
| RSJ650N10TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 65A LPTS
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 65A LPTS
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 658 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 443.25 грн |
| 10+ | 320.12 грн |
| 100+ | 241.51 грн |
| 500+ | 204.28 грн |
| RSJ800N06TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 80A LPTS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: LPTS
Description: MOSFET N-CH 60V 80A LPTS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: LPTS
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.77 грн |
| 10+ | 181.78 грн |
| 100+ | 133.08 грн |
| 500+ | 104.82 грн |
| RSQ015P10TR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 100V 1.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 100V 1.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| RSR010N10TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Description: MOSFET N-CH 100V 1A TSMT3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.07 грн |
| RF301B2STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A CPD
Description: DIODE GEN PURP 200V 3A CPD
на замовлення 4365 шт:
термін постачання 21-31 дні (днів)
| RF501B2STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A CPD
Description: DIODE GEN PURP 200V 5A CPD
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
| 1SS355VMTE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 80V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE STANDARD 80V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 1415613 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 38+ | 7.98 грн |
| 100+ | 4.92 грн |
| 500+ | 3.36 грн |
| 1000+ | 2.95 грн |
| 2SA2048KT146Q |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SMT3
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 30V 1A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SMT3
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 4667 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 15+ | 21.04 грн |
| 100+ | 10.59 грн |
| 500+ | 8.81 грн |
| 1000+ | 6.85 грн |
| 2SA2088T106Q |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
на замовлення 4909 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 14+ | 21.42 грн |
| 100+ | 13.58 грн |
| 500+ | 9.58 грн |
| 1000+ | 8.55 грн |
| 2SA2094TLQ |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
на замовлення 18918 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.37 грн |
| 10+ | 30.15 грн |
| 100+ | 19.39 грн |
| 500+ | 13.84 грн |
| 1000+ | 12.43 грн |
| 2SA2119KT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 12V 0.5A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SMT3
Frequency - Transition: 260MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 12V 0.5A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SMT3
Frequency - Transition: 260MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.32 грн |
| 13+ | 23.95 грн |
| 100+ | 14.91 грн |
| 2SC5824T100R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 60V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS NPN 60V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
на замовлення 264 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.87 грн |
| 10+ | 39.33 грн |
| 100+ | 25.59 грн |
| 2SC5866TLQ |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS NPN 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.04 грн |
| 11+ | 28.58 грн |
| 100+ | 18.42 грн |
| 500+ | 13.16 грн |
| 1000+ | 11.83 грн |
| 2SC5866TLR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS NPN 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
на замовлення 21924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.04 грн |
| 11+ | 28.58 грн |
| 100+ | 18.42 грн |
| 500+ | 13.16 грн |
| 1000+ | 11.83 грн |
| 2SC5868TLQ |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 60V 0.5A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: TRANS NPN 60V 0.5A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
на замовлення 6761 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.90 грн |
| 15+ | 20.74 грн |
| 100+ | 12.42 грн |
| 500+ | 10.80 грн |
| 1000+ | 7.34 грн |
| 2SC5868TLR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 60V 0.5A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: TRANS NPN 60V 0.5A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SD2703TL |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A TUMT3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TUMT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: TRANS NPN 30V 1A TUMT3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TUMT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.94 грн |
| 10+ | 36.94 грн |
| 100+ | 27.56 грн |
| 500+ | 20.33 грн |
| 1000+ | 15.71 грн |
| DTA114YUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Resistors Included: R1 and R2
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Description: TRANS PREBIAS PNP 50V UMT3F
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Resistors Included: R1 and R2
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.40 грн |
| 41+ | 7.39 грн |
| 100+ | 4.57 грн |
| 500+ | 3.12 грн |
| 1000+ | 2.74 грн |
| DTC114ECAT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 784 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.55 грн |
| 16+ | 19.33 грн |
| 100+ | 12.22 грн |
| 500+ | 8.57 грн |
| DTC114EEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 1729 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.27 грн |
| 32+ | 9.63 грн |
| 100+ | 5.95 грн |
| 500+ | 4.09 грн |
| 1000+ | 3.61 грн |
| DTC114EUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3358 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 43+ | 7.09 грн |
| 100+ | 4.39 грн |
| 500+ | 3.00 грн |
| 1000+ | 2.63 грн |
| DTC114YUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V UMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.17 грн |
| 38+ | 8.06 грн |
| 100+ | 4.96 грн |
| 500+ | 3.39 грн |
| 1000+ | 2.98 грн |
| DTC123JUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V UMT3F
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.17 грн |
| 38+ | 8.06 грн |
| 100+ | 4.99 грн |
| 500+ | 3.41 грн |
| 1000+ | 2.99 грн |
| DTC124EUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
на замовлення 11239 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 42+ | 7.24 грн |
| 100+ | 4.45 грн |
| 500+ | 3.04 грн |
| 1000+ | 2.67 грн |
| DTC143ZEBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 20799 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.27 грн |
| 32+ | 9.63 грн |
| 100+ | 5.95 грн |
| 500+ | 4.09 грн |
| 1000+ | 3.61 грн |
| DTC143ZUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 486 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 39+ | 7.84 грн |
| 100+ | 4.84 грн |
| DTC144EEBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 2068 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.50 грн |
| 34+ | 8.88 грн |
| 100+ | 5.49 грн |
| 500+ | 3.77 грн |
| 1000+ | 3.32 грн |
| DTC144EUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 4949 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.17 грн |
| 39+ | 7.69 грн |
| 100+ | 4.72 грн |
| 500+ | 3.23 грн |
| 1000+ | 2.83 грн |
| DTC623TKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 7709 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 15+ | 20.74 грн |
| 100+ | 10.45 грн |
| 500+ | 8.70 грн |
| 1000+ | 6.77 грн |
| DTC643TKT146 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
на замовлення 1195 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.52 грн |
| 13+ | 23.43 грн |
| 100+ | 14.89 грн |
| 500+ | 10.54 грн |
| 1000+ | 9.43 грн |
| EM6M2T2R |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
на замовлення 52120 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.34 грн |
| 10+ | 34.18 грн |
| 100+ | 22.10 грн |
| 500+ | 15.83 грн |
| 1000+ | 14.24 грн |
| 2000+ | 12.91 грн |
| EMB3T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 6604 шт:
термін постачання 21-31 дні (днів)
| EMN11T2R |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD6
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA EMD6
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 10035 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.07 грн |
| 13+ | 24.62 грн |
| 100+ | 15.66 грн |
| 500+ | 11.07 грн |
| 1000+ | 9.90 грн |
| 2000+ | 8.92 грн |
| FMA5AT148 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
Description: TRANS PREBIAS DUAL PNP SMT5
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
на замовлення 5540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 12+ | 26.86 грн |
| 100+ | 16.14 грн |
| 500+ | 14.03 грн |
| 1000+ | 9.54 грн |
| FMA7AT148 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Not For New Designs
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Not For New Designs
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 3003 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 12+ | 26.86 грн |
| 100+ | 16.14 грн |
| 500+ | 14.03 грн |
| 1000+ | 9.54 грн |
| FMP1T148 |
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Виробник: Rohm Semiconductor
Description: BRIDGE RECT 1PHASE 80V 25MA SMD5
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Average Rectified (Io): 25 mA
Voltage - Peak Reverse (Max): 80 V
Supplier Device Package: SMD5
Technology: Standard
Operating Temperature: 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: BRIDGE RECT 1PHASE 80V 25MA SMD5
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Average Rectified (Io): 25 mA
Voltage - Peak Reverse (Max): 80 V
Supplier Device Package: SMD5
Technology: Standard
Operating Temperature: 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 1928 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.32 грн |
| 11+ | 27.68 грн |
| 100+ | 20.68 грн |
| 500+ | 15.25 грн |
| 1000+ | 11.78 грн |
| FMY5T148 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 120V 50MA SMT5
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 50mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 140MHz
Description: TRANS NPN/PNP 120V 50MA SMT5
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 50mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 140MHz
на замовлення 2530 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 10+ | 32.53 грн |
| 100+ | 20.94 грн |
| 500+ | 14.96 грн |
| 1000+ | 13.44 грн |
| IMH23T110 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Part Status: Active
Supplier Device Package: SMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 600mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL NPN SMT6
Part Status: Active
Supplier Device Package: SMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 600mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
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од. на суму грн.
| IMH8AT108 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 12+ | 25.59 грн |
| MMSTA28T146 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN DARL 80V 0.3A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN DARL 80V 0.3A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2510B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 10.3V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Power - Max: 1 W
Part Status: Not For New Designs
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 10.3 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 10.3V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Power - Max: 1 W
Part Status: Not For New Designs
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 10.3 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2511B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 11.5V 1W PMDS
Description: DIODE ZENER 11.5V 1W PMDS
на замовлення 1720 шт:
термін постачання 21-31 дні (днів)



































