Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104025) > Сторінка 177 з 1734
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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DTC144EMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 20073 шт: термін постачання 21-31 дні (днів) |
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DTC144GKAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW SMT3 |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTC144TKAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW SMT3 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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DTC144TUAT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 3071 шт: термін постачання 21-31 дні (днів) |
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DTC144VKAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A SMT3Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 194 шт: термін постачання 21-31 дні (днів) |
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DTC144WETL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW EMT3 |
на замовлення 2330 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTC144WUAT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 30 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 1471 шт: термін постачання 21-31 дні (днів) |
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DTC314TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW SMT3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC314TUT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC323TUT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC343TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 15V 0.6A SMT3Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistor - Base (R1): 2.2 kOhms |
на замовлення 715 шт: термін постачання 21-31 дні (днів) |
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DTD113EKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.5A SMT3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 1 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 4199 шт: термін постачання 21-31 дні (днів) |
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DTD113ZUT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.5A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 3218 шт: термін постачання 21-31 дні (днів) |
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DTD114GKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.5A SMT3Resistor - Emitter Base (R2): 10 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 5900 шт: термін постачання 21-31 дні (днів) |
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DTD123EKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.5A SMT3Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 7970 шт: термін постачання 21-31 дні (днів) |
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DTD123TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 40V 0.5A SMT3Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistors Included: R1 Only Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 500 mA |
на замовлення 14248 шт: термін постачання 21-31 дні (днів) |
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EMA2T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMB11T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT6 |
на замовлення 30713 шт: термін постачання 21-31 дні (днів) |
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EMB2T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
на замовлення 5873 шт: термін постачання 21-31 дні (днів) |
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EMB4T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMB9T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMD12T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 7400 шт: термін постачання 21-31 дні (днів) |
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EMD2T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMD3T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMD6T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT6 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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EMD9T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMF21T2R | Rohm Semiconductor |
Description: TRANS NPN PREBIAS/PNP 0.15W EMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMF5T2R | Rohm Semiconductor |
Description: TRANS NPN PREBIAS/PNP 0.15W EMT6Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz, 260MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Current - Collector (Ic) (Max): 100mA, 500mA Power - Max: 150mW Transistor Type: 1 NPN Pre-Biased, 1 PNP Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 13618 шт: термін постачання 21-31 дні (днів) |
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EMG2T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT5Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT5 Resistor - Emitter Base (R2): 47kOhms |
на замовлення 2855 шт: термін постачання 21-31 дні (днів) |
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EMH10T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V |
на замовлення 6470 шт: термін постачання 21-31 дні (днів) |
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EMH11T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 27909 шт: термін постачання 21-31 дні (днів) |
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EMH1T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 7427 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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EMH2T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 87850 шт: термін постачання 21-31 дні (днів) |
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EMH3T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6Supplier Device Package: EMT6 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 8173 шт: термін постачання 21-31 дні (днів) |
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EMH4T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6Supplier Device Package: EMT6 Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 11733 шт: термін постачання 21-31 дні (днів) |
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EMH9T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 11410 шт: термін постачання 21-31 дні (днів) |
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EMT1T2R | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6EMTPart Status: Active Supplier Device Package: EMT6 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 30538 шт: термін постачання 21-31 дні (днів) |
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EMT2T2R | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6EMTCurrent - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Not For New Designs Supplier Device Package: EMT6 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V |
на замовлення 6671 шт: термін постачання 21-31 дні (днів) |
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EMX1T2R | Rohm Semiconductor |
Description: TRANS 2NPN DUAL 50V 150MA EMT6Part Status: Active Supplier Device Package: EMT6 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 54232 шт: термін постачання 21-31 дні (днів) |
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EMX2T2R | Rohm Semiconductor |
Description: TRANS 2NPN 50V 0.15A 6EMTCurrent - Collector (Ic) (Max): 150mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMX4T2R | Rohm Semiconductor |
Description: TRANS 2NPN 20V 0.05A 6EMTSupplier Device Package: EMT6 Frequency - Transition: 1.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 50mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMX5T2R | Rohm Semiconductor |
Description: TRANS 2NPN 11V 0.05A 6EMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMZ2T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 150MA EMT6Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Frequency - Transition: 180MHz, 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FMA2AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5Packaging: Cut Tape (CT) Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Part Status: Active Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 |
на замовлення 510 шт: термін постачання 21-31 дні (днів) |
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FMA8AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FMA9AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5Part Status: Active Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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FMG11AT148 | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.3W SMT5Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 4190 шт: термін постачання 21-31 дні (днів) |
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FMG2AT148 | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.3W SMT5 |
на замовлення 1929 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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FMG4AT148 | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.3W SMT5 |
на замовлення 1339 шт: термін постачання 21-31 дні (днів) |
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FMG5AT148 | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.3W SMT5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FMG8AT148 | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.3W SMT5Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 11926 шт: термін постачання 21-31 дні (днів) |
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FMG9AT148 | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.3W SMT5Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 5708 шт: термін постачання 21-31 дні (днів) |
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FMY1AT148 | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 0.15A 5SMTDC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: NPN, PNP (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Supplier Device Package: SMT5 Frequency - Transition: 180MHz, 140MHz |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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IMB2AT110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT6 |
на замовлення 2685 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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IMB4AT110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IMB9AT110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT6Part Status: Not For New Designs Supplier Device Package: SMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 6059 шт: термін постачання 21-31 дні (днів) |
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IMD16AT108 | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA, 500mA Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 100kOhms, 2.2kOhms Part Status: Active Supplier Device Package: SMT6 Power - Max: 300mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount |
на замовлення 6007 шт: термін постачання 21-31 дні (днів) |
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IMD2AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6Supplier Device Package: SMT6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 1851 шт: термін постачання 21-31 дні (днів) |
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IMH14AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6Supplier Device Package: SMT6 Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IMH1AT110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6Supplier Device Package: SMT6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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| DTC144EMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 20073 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.18 грн |
| 19+ | 16.00 грн |
| 100+ | 10.07 грн |
| 500+ | 7.03 грн |
| 1000+ | 6.24 грн |
| 2000+ | 5.58 грн |
| DTC144GKAT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW SMT3
Description: TRANS PREBIAS NPN 200MW SMT3
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
| DTC144TKAT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW SMT3
Description: TRANS PREBIAS NPN 200MW SMT3
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.76 грн |
| 24+ | 12.86 грн |
| 100+ | 7.00 грн |
| DTC144TUAT106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 3071 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.31 грн |
| 32+ | 9.57 грн |
| 100+ | 5.93 грн |
| 500+ | 4.07 грн |
| 1000+ | 3.58 грн |
| DTC144VKAT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.64 грн |
| 25+ | 12.27 грн |
| 100+ | 5.98 грн |
| DTC144WETL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW EMT3
Description: TRANS PREBIAS NPN 150MW EMT3
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)
| DTC144WUAT106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 30 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V UMT3
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 30 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 1471 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.86 грн |
| 29+ | 10.62 грн |
| 100+ | 6.60 грн |
| 500+ | 4.54 грн |
| 1000+ | 4.00 грн |
| DTC314TKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW SMT3
Description: TRANS PREBIAS NPN 200MW SMT3
товару немає в наявності
В кошику
од. на суму грн.
| DTC314TUT106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Description: TRANS PREBIAS NPN 200MW UMT3
товару немає в наявності
В кошику
од. на суму грн.
| DTC323TUT106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Description: TRANS PREBIAS NPN 200MW UMT3
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
товару немає в наявності
В кошику
од. на суму грн.
| DTC343TKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 15V 0.6A SMT3
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2 kOhms
Description: TRANS PREBIAS NPN 15V 0.6A SMT3
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2 kOhms
на замовлення 715 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.06 грн |
| 11+ | 28.64 грн |
| 100+ | 17.18 грн |
| 500+ | 14.93 грн |
| DTD113EKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 4199 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.61 грн |
| 13+ | 23.56 грн |
| 100+ | 14.97 грн |
| 500+ | 10.57 грн |
| 1000+ | 9.44 грн |
| DTD113ZUT106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3218 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.26 грн |
| 10+ | 30.74 грн |
| 100+ | 19.81 грн |
| 500+ | 14.15 грн |
| 1000+ | 12.71 грн |
| DTD114GKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Resistor - Emitter Base (R2): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Resistor - Emitter Base (R2): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.06 грн |
| 11+ | 28.34 грн |
| 100+ | 16.99 грн |
| 500+ | 14.77 грн |
| 1000+ | 10.04 грн |
| DTD123EKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 7970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.84 грн |
| 13+ | 23.86 грн |
| 100+ | 14.32 грн |
| 500+ | 12.45 грн |
| 1000+ | 8.46 грн |
| DTD123TKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 40V 0.5A SMT3
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistors Included: R1 Only
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Description: TRANS PREBIAS NPN 40V 0.5A SMT3
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistors Included: R1 Only
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
на замовлення 14248 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.93 грн |
| 11+ | 29.09 грн |
| 100+ | 18.61 грн |
| 500+ | 13.24 грн |
| 1000+ | 11.87 грн |
| EMA2T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT5
Description: TRANS 2PNP PREBIAS 0.15W EMT5
товару немає в наявності
В кошику
од. на суму грн.
| EMB11T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
на замовлення 30713 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.96 грн |
| 15+ | 20.49 грн |
| 100+ | 12.32 грн |
| 500+ | 10.70 грн |
| 1000+ | 7.28 грн |
| 2000+ | 6.70 грн |
| EMB2T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 5873 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.07 грн |
| 13+ | 23.71 грн |
| 100+ | 16.15 грн |
| 500+ | 11.37 грн |
| 1000+ | 8.52 грн |
| 2000+ | 7.81 грн |
| EMB4T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
товару немає в наявності
В кошику
од. на суму грн.
| EMB9T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
товару немає в наявності
В кошику
од. на суму грн.
| EMD12T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 7400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.96 грн |
| 15+ | 20.49 грн |
| 100+ | 12.32 грн |
| 500+ | 10.70 грн |
| 1000+ | 7.28 грн |
| 2000+ | 6.70 грн |
| EMD2T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
товару немає в наявності
В кошику
од. на суму грн.
| EMD3T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
товару немає в наявності
В кошику
од. на суму грн.
| EMD6T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.96 грн |
| 15+ | 20.49 грн |
| 100+ | 12.32 грн |
| 500+ | 10.70 грн |
| 1000+ | 7.28 грн |
| 2000+ | 6.70 грн |
| EMD9T2R |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
товару немає в наявності
В кошику
од. на суму грн.
| EMF21T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN PREBIAS/PNP 0.15W EMT6
Description: TRANS NPN PREBIAS/PNP 0.15W EMT6
товару немає в наявності
В кошику
од. на суму грн.
| EMF5T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN PREBIAS/PNP 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz, 260MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Current - Collector (Ic) (Max): 100mA, 500mA
Power - Max: 150mW
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS NPN PREBIAS/PNP 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz, 260MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Current - Collector (Ic) (Max): 100mA, 500mA
Power - Max: 150mW
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 13618 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.51 грн |
| 13+ | 24.53 грн |
| 100+ | 17.07 грн |
| 500+ | 12.51 грн |
| 1000+ | 10.16 грн |
| 2000+ | 9.09 грн |
| EMG2T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT5
Resistor - Emitter Base (R2): 47kOhms
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT5
Resistor - Emitter Base (R2): 47kOhms
на замовлення 2855 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.29 грн |
| 13+ | 23.93 грн |
| 100+ | 16.27 грн |
| 500+ | 11.45 грн |
| 1000+ | 8.59 грн |
| 2000+ | 7.87 грн |
| EMH10T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
на замовлення 6470 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.61 грн |
| 13+ | 23.33 грн |
| 100+ | 14.80 грн |
| 500+ | 10.45 грн |
| 1000+ | 9.33 грн |
| 2000+ | 8.40 грн |
| EMH11T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 27909 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.96 грн |
| 15+ | 20.49 грн |
| 100+ | 12.30 грн |
| 500+ | 10.69 грн |
| 1000+ | 7.27 грн |
| 2000+ | 6.69 грн |
| EMH1T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 7427 шт:
термін постачання 21-31 дні (днів)
| EMH2T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 87850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.96 грн |
| 15+ | 20.49 грн |
| 100+ | 12.32 грн |
| 500+ | 10.70 грн |
| 1000+ | 7.28 грн |
| 2000+ | 6.70 грн |
| EMH3T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 8173 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.28 грн |
| 14+ | 22.14 грн |
| 100+ | 14.04 грн |
| 500+ | 9.91 грн |
| 1000+ | 8.85 грн |
| 2000+ | 7.96 грн |
| EMH4T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 11733 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.96 грн |
| 17+ | 17.87 грн |
| 100+ | 12.07 грн |
| 500+ | 8.79 грн |
| 1000+ | 7.94 грн |
| 2000+ | 7.22 грн |
| EMH9T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 11410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.51 грн |
| 13+ | 24.53 грн |
| 100+ | 17.07 грн |
| 500+ | 12.51 грн |
| 1000+ | 10.16 грн |
| 2000+ | 9.09 грн |
| EMT1T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6EMT
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2PNP 50V 0.15A 6EMT
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 30538 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.50 грн |
| 14+ | 21.69 грн |
| 100+ | 13.80 грн |
| 500+ | 9.74 грн |
| 1000+ | 8.70 грн |
| 2000+ | 7.83 грн |
| EMT2T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6EMT
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: EMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Description: TRANS 2PNP 50V 0.15A 6EMT
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: EMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
на замовлення 6671 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.06 грн |
| 14+ | 22.74 грн |
| 100+ | 14.43 грн |
| 500+ | 10.19 грн |
| 1000+ | 9.10 грн |
| 2000+ | 8.18 грн |
| EMX1T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN DUAL 50V 150MA EMT6
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN DUAL 50V 150MA EMT6
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 54232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.73 грн |
| 15+ | 21.09 грн |
| 100+ | 13.41 грн |
| 500+ | 9.46 грн |
| 1000+ | 8.46 грн |
| 2000+ | 7.61 грн |
| EMX2T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.15A 6EMT
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Description: TRANS 2NPN 50V 0.15A 6EMT
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
товару немає в наявності
В кошику
од. на суму грн.
| EMX4T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN 20V 0.05A 6EMT
Supplier Device Package: EMT6
Frequency - Transition: 1.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 50mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN 20V 0.05A 6EMT
Supplier Device Package: EMT6
Frequency - Transition: 1.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 50mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.04 грн |
| 10+ | 36.65 грн |
| 100+ | 25.51 грн |
| 500+ | 18.69 грн |
| 1000+ | 15.19 грн |
| 2000+ | 13.58 грн |
| EMX5T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN 11V 0.05A 6EMT
Description: TRANS 2NPN 11V 0.05A 6EMT
товару немає в наявності
В кошику
од. на суму грн.
| EMZ2T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 150MA EMT6
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 180MHz, 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Description: TRANS NPN/PNP 50V 150MA EMT6
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 180MHz, 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
товару немає в наявності
В кошику
од. на суму грн.
| FMA2AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Packaging: Cut Tape (CT)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Description: TRANS PREBIAS DUAL PNP SMT5
Packaging: Cut Tape (CT)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.50 грн |
| 11+ | 28.27 грн |
| 100+ | 19.23 грн |
| 500+ | 13.53 грн |
| FMA8AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Description: TRANS PREBIAS DUAL PNP SMT5
товару немає в наявності
В кошику
од. на суму грн.
| FMA9AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.38 грн |
| 10+ | 31.49 грн |
| 100+ | 21.45 грн |
| FMG11AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.3W SMT5
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.3W SMT5
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 4190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.40 грн |
| 13+ | 24.83 грн |
| 100+ | 14.88 грн |
| 500+ | 12.93 грн |
| 1000+ | 8.79 грн |
| FMG2AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.3W SMT5
Description: TRANS 2NPN PREBIAS 0.3W SMT5
на замовлення 1929 шт:
термін постачання 21-31 дні (днів)
| FMG4AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.3W SMT5
Description: TRANS 2NPN PREBIAS 0.3W SMT5
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.71 грн |
| 10+ | 33.73 грн |
| 100+ | 23.00 грн |
| 500+ | 16.19 грн |
| 1000+ | 12.14 грн |
| FMG5AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.3W SMT5
Description: TRANS 2NPN PREBIAS 0.3W SMT5
товару немає в наявності
В кошику
од. на суму грн.
| FMG8AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.3W SMT5
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.3W SMT5
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 11926 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.84 грн |
| 14+ | 21.76 грн |
| 100+ | 10.99 грн |
| 500+ | 9.14 грн |
| 1000+ | 7.11 грн |
| FMG9AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.3W SMT5
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.3W SMT5
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 5708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.73 грн |
| 12+ | 26.92 грн |
| 100+ | 16.18 грн |
| 500+ | 14.06 грн |
| 1000+ | 9.56 грн |
| FMY1AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 0.15A 5SMT
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 180MHz, 140MHz
Description: TRANS NPN/PNP 50V 0.15A 5SMT
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 180MHz, 140MHz
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.06 грн |
| 11+ | 29.47 грн |
| 100+ | 20.07 грн |
| IMB2AT110 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Description: TRANS PREBIAS DUAL PNP SMT6
на замовлення 2685 шт:
термін постачання 21-31 дні (днів)
| IMB4AT110 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Description: TRANS PREBIAS DUAL PNP SMT6
товару немає в наявності
В кошику
од. на суму грн.
| IMB9AT110 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Part Status: Not For New Designs
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL PNP SMT6
Part Status: Not For New Designs
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 6059 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 12+ | 25.50 грн |
| 100+ | 17.37 грн |
| 500+ | 12.22 грн |
| 1000+ | 9.17 грн |
| IMD16AT108 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA, 500mA
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 100kOhms, 2.2kOhms
Part Status: Active
Supplier Device Package: SMT6
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA, 500mA
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 100kOhms, 2.2kOhms
Part Status: Active
Supplier Device Package: SMT6
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
на замовлення 6007 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.60 грн |
| 11+ | 27.52 грн |
| 100+ | 17.63 грн |
| 500+ | 12.53 грн |
| 1000+ | 11.24 грн |
| IMD2AT108 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 1851 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.50 грн |
| 14+ | 21.69 грн |
| 100+ | 13.78 грн |
| 500+ | 9.71 грн |
| 1000+ | 8.68 грн |
| IMH14AT108 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IMH1AT110 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.71 грн |
| 12+ | 25.13 грн |
| 100+ | 16.03 грн |
| 500+ | 11.34 грн |
| 1000+ | 10.15 грн |





















