Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105092) > Сторінка 426 з 1752
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DTD543EETL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 12V 0.5A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 5025 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
DTD543ZETL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 12V 0.5A EMT3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 260 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
DTD713ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW VMT3 |
на замовлення 7527 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
DTD723YMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW VMT3 |
на замовлення 3426 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
DTD743EETL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW EMT3 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
DTD743EMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 30V 0.2A VMT3Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 260 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
EM6K31T2R | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 0.25A EMT6Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Current - Continuous Drain (Id) @ 25°C: 250mA Drain to Source Voltage (Vdss): 60V Power - Max: 150mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT6 Vgs(th) (Max) @ Id: 2.3V @ 1mA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V |
на замовлення 20190 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
EMA5T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT5 |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
EMD30T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 |
на замовлення 15830 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
EMG6T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V EMT5Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Cut Tape (CT) Supplier Device Package: EMT5 Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
EMP11T2R | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD6Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: EMD6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
EMX26T2R | Rohm Semiconductor |
Description: TRANS 2NPN 50V 0.15A 6EMTSupplier Device Package: EMT6 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Current - Collector Cutoff (Max): 300nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 26870 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FMA1AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5Part Status: Active Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 2611 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FMA3AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5 |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
FMG3AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V SMT5Supplier Device Package: SMT5 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 857 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FMY4AT148 | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 5SMTPackaging: Cut Tape (CT) Supplier Device Package: SMT5 Frequency - Transition: 140MHz, 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Current - Collector (Ic) (Max): 150mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 |
на замовлення 1885 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
FTZ5.6ET148 | Rohm Semiconductor |
Description: DIODE ZENER ARRAY 5.6V SMD5Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Power - Max: 200 mW Supplier Device Package: SMD5 Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Configuration: 2 Pair Common Anode Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 4397 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
IMH5AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6Supplier Device Package: SMT6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
IMT1AT108 | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6SMTTransistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) Supplier Device Package: SMT6 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 300mW Operating Temperature: 150°C (TJ) |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
IMT3AT108 | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6SMTSupplier Device Package: SMT6 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 1169 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
IMX1T108 | Rohm Semiconductor |
Description: TRANS 2NPN DUAL 50V 150MA SMT6Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SMT6 Part Status: Not For New Designs |
на замовлення 1180 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MMSTA13T146 | Rohm Semiconductor |
Description: TRANS NPN 30V 0.3A SOT-346 SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 2785 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
PTZTE2510A | Rohm Semiconductor |
Description: DIODE ZENER 10V 1W PMDSTolerance: ±6% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: PMDS Part Status: Not For New Designs Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE2512A | Rohm Semiconductor |
Description: DIODE ZENER 12V 1W PMDSTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 9 V |
на замовлення 489 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
PTZTE2515A | Rohm Semiconductor |
Description: DIODE ZENER 15V 1W PMDSTolerance: ±6% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 11 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE2516A | Rohm Semiconductor |
Description: DIODE ZENER 16V 1W PMDSTolerance: ±6% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE2518A | Rohm Semiconductor |
Description: DIODE ZENER 18V 1W PMDSTolerance: ±6% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 1756 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
PTZTE2520A | Rohm Semiconductor |
Description: DIODE ZENER 20V 1W PMDS |
на замовлення 1100 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
PTZTE2522A | Rohm Semiconductor |
Description: DIODE ZENER 22V 1W PMDS |
на замовлення 1446 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE2524A | Rohm Semiconductor |
Description: DIODE ZENER 24V 1W PMDS |
на замовлення 1469 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE2527A | Rohm Semiconductor |
Description: DIODE ZENER 27V 1W PMDS |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE2533A | Rohm Semiconductor |
Description: DIODE ZENER 33V 1W PMDS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE2536A | Rohm Semiconductor |
Description: DIODE ZENER 36V 1W PMDS |
на замовлення 1275 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE2539A | Rohm Semiconductor |
Description: DIODE ZENER 39V 1W PMDS |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE253.6B | Rohm Semiconductor |
Description: DIODE ZENER 3.8V 1W PMDS |
на замовлення 6187 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE2543A | Rohm Semiconductor |
Description: DIODE ZENER 43V 1W PMDS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE254.7B | Rohm Semiconductor |
Description: DIODE ZENER 4.9V 1W PMDSTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 4.9 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE255.1A | Rohm Semiconductor |
Description: DIODE ZENER 5.1V 1W PMDS |
на замовлення 1399 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE255.6A | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 1W PMDS |
на замовлення 3290 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE256.2A | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 1W PMDS |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE256.8A | Rohm Semiconductor |
Description: DIODE ZENER 6.8V 1W PMDS |
на замовлення 388 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE257.5A | Rohm Semiconductor |
Description: DIODE ZENER 7.5V 1W PMDS |
на замовлення 741 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE258.2A | Rohm Semiconductor |
Description: DIODE ZENER 8.2V 1W PMDS |
на замовлення 2960 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
PTZTE259.1B | Rohm Semiconductor |
Description: DIODE ZENER 9.8V 1W PMDSTolerance: ±6% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 9.8 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
QSH29TR | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 1.25W TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 1.25W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 70V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 100mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V Resistor - Base (R1): 10kOhms Supplier Device Package: TSMT6 (SC-95) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
QSZ2TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 30V 1.5A TSMT5Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP (Emitter Coupled) Operating Temperature: 150°C (TJ) Power - Max: 1.25W Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 300MHz, 280MHz Supplier Device Package: TSMT5 |
на замовлення 989 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
QSZ4TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 30V 2A 5TSMT |
на замовлення 1670 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
RB160L-90TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 90V 1A PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
RB162VA-20TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 1A TUMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
RB411VA-50TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 500MA TUMD2Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 20pF @ 10V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: TUMD2 Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
RB450FT106 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 100MA UMD3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: UMD3 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 3719 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RB496EATR | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 20V 1A TSMD5Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1A Supplier Device Package: TSMD5 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 10 V |
на замовлення 8155 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RB520SM-40T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA EMD2Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 674938 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RB551V-30TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 500MA UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
RF051VA2STR | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 500MA TUMD2Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: TUMD2 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
RF073M2STR | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 700MA PMDU |
на замовлення 7083 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
RF103L2STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 1A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
RN739DT146 | Rohm Semiconductor |
Description: DIODE PIN HF SW 50V 50MA SOT-346 |
на замовлення 2969 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
|
RPM841-H11E2A | Rohm Semiconductor |
Description: MODULE IRDA 115.2KBPS 7-SMD Packaging: Cut Tape (CT) Orientation: Side View Operating Temperature: -30°C ~ 85°C Size: 6.8mm x 2.4mm x 1.5mm Data Rate: 115.2kbs (SIR) Standards: IrDA 1.2 Link Range, Low Power: 20cm, 60cm Voltage - Supply: 2.4 V ~ 3.6 V Idle Current, Typ @ 25°C: 90 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
RPM872-H14E2A | Rohm Semiconductor |
Description: MODULE IRDA 115.2KBPS 8SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| DTD543EETL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 5025 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.77 грн |
| 16+ | 18.73 грн |
| 100+ | 11.89 грн |
| 500+ | 8.35 грн |
| 1000+ | 7.44 грн |
| DTD543ZETL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.77 грн |
| 16+ | 18.73 грн |
| 100+ | 11.89 грн |
| 500+ | 8.35 грн |
| 1000+ | 7.44 грн |
| DTD713ZMT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW VMT3
Description: TRANS PREBIAS NPN 150MW VMT3
на замовлення 7527 шт:
термін постачання 21-31 дні (днів)
| DTD723YMT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW VMT3
Description: TRANS PREBIAS NPN 150MW VMT3
на замовлення 3426 шт:
термін постачання 21-31 дні (днів)
| DTD743EETL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW EMT3
Description: TRANS PREBIAS NPN 150MW EMT3
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| DTD743EMT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 30V 0.2A VMT3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 30V 0.2A VMT3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| EM6K31T2R |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A EMT6
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 250mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Vgs(th) (Max) @ Id: 2.3V @ 1mA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Description: MOSFET 2N-CH 60V 0.25A EMT6
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 250mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Vgs(th) (Max) @ Id: 2.3V @ 1mA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
на замовлення 20190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 30.97 грн |
| 100+ | 19.94 грн |
| 500+ | 14.27 грн |
| 1000+ | 12.84 грн |
| 2000+ | 11.64 грн |
| EMA5T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT5
Description: TRANS 2PNP PREBIAS 0.15W EMT5
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 12+ | 25.59 грн |
| EMD30T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
на замовлення 15830 шт:
термін постачання 21-31 дні (днів)
| EMG6T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT5
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: EMT5
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Description: TRANS PREBIAS 2NPN 50V EMT5
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: EMT5
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
товару немає в наявності
В кошику
од. на суму грн.
| EMP11T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD6
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA EMD6
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.55 грн |
| 16+ | 19.40 грн |
| 100+ | 12.28 грн |
| 500+ | 8.61 грн |
| 1000+ | 7.67 грн |
| 2000+ | 6.88 грн |
| EMX26T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.15A 6EMT
Supplier Device Package: EMT6
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 300nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN 50V 0.15A 6EMT
Supplier Device Package: EMT6
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 300nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 26870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 11+ | 28.13 грн |
| 100+ | 19.54 грн |
| 500+ | 14.32 грн |
| 1000+ | 11.64 грн |
| 2000+ | 10.40 грн |
| FMA1AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 2611 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 11+ | 28.88 грн |
| 100+ | 19.68 грн |
| 500+ | 13.85 грн |
| 1000+ | 10.39 грн |
| FMA3AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Description: TRANS PREBIAS DUAL PNP SMT5
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
| FMG3AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V SMT5
Supplier Device Package: SMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2NPN 50V SMT5
Supplier Device Package: SMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 857 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.07 грн |
| 13+ | 24.18 грн |
| 100+ | 15.46 грн |
| 500+ | 10.97 грн |
| FMY4AT148 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 5SMT
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 140MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Description: TRANS NPN/PNP 50V 5SMT
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 140MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
на замовлення 1885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 16+ | 19.40 грн |
| 100+ | 13.10 грн |
| 500+ | 9.55 грн |
| 1000+ | 8.65 грн |
| FTZ5.6ET148 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER ARRAY 5.6V SMD5
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 200 mW
Supplier Device Package: SMD5
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 2 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER ARRAY 5.6V SMD5
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 200 mW
Supplier Device Package: SMD5
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 2 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 4397 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.55 грн |
| 25+ | 12.31 грн |
| IMH5AT108 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IMT1AT108 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6SMT
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Supplier Device Package: SMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Description: TRANS 2PNP 50V 0.15A 6SMT
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Supplier Device Package: SMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| IMT3AT108 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6SMT
Supplier Device Package: SMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS 2PNP 50V 0.15A 6SMT
Supplier Device Package: SMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 1169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.90 грн |
| 16+ | 19.18 грн |
| 100+ | 9.66 грн |
| 500+ | 8.03 грн |
| 1000+ | 6.25 грн |
| IMX1T108 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN DUAL 50V 150MA SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SMT6
Part Status: Not For New Designs
Description: TRANS 2NPN DUAL 50V 150MA SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SMT6
Part Status: Not For New Designs
на замовлення 1180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 15+ | 20.00 грн |
| 100+ | 13.49 грн |
| 500+ | 9.84 грн |
| 1000+ | 8.91 грн |
| MMSTA13T146 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 0.3A SOT-346 SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 0.3A SOT-346 SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 2785 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.45 грн |
| 14+ | 21.94 грн |
| 100+ | 13.13 грн |
| 500+ | 11.41 грн |
| 1000+ | 7.76 грн |
| PTZTE2510A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 10V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Part Status: Not For New Designs
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Description: DIODE ZENER 10V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Part Status: Not For New Designs
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2512A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 12V 1W PMDS
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Description: DIODE ZENER 12V 1W PMDS
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
на замовлення 489 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 33.80 грн |
| 100+ | 21.82 грн |
| PTZTE2515A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 15V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Description: DIODE ZENER 15V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2516A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Description: DIODE ZENER 16V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2518A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 18V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 18V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 1756 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.12 грн |
| 10+ | 34.55 грн |
| 100+ | 22.30 грн |
| 500+ | 15.97 грн |
| PTZTE2520A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 20V 1W PMDS
Description: DIODE ZENER 20V 1W PMDS
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 10+ | 30.89 грн |
| 100+ | 23.10 грн |
| 500+ | 17.03 грн |
| PTZTE2522A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 22V 1W PMDS
Description: DIODE ZENER 22V 1W PMDS
на замовлення 1446 шт:
термін постачання 21-31 дні (днів)
| PTZTE2524A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 24V 1W PMDS
Description: DIODE ZENER 24V 1W PMDS
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)
| PTZTE2527A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 1W PMDS
Description: DIODE ZENER 27V 1W PMDS
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| PTZTE2533A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 33V 1W PMDS
Description: DIODE ZENER 33V 1W PMDS
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2536A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 36V 1W PMDS
Description: DIODE ZENER 36V 1W PMDS
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)
| PTZTE2539A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 39V 1W PMDS
Description: DIODE ZENER 39V 1W PMDS
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| PTZTE253.6B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.8V 1W PMDS
Description: DIODE ZENER 3.8V 1W PMDS
на замовлення 6187 шт:
термін постачання 21-31 дні (днів)
| PTZTE2543A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 43V 1W PMDS
Description: DIODE ZENER 43V 1W PMDS
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE254.7B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.9V 1W PMDS
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.9 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 4.9V 1W PMDS
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.9 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE255.1A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 1W PMDS
Description: DIODE ZENER 5.1V 1W PMDS
на замовлення 1399 шт:
термін постачання 21-31 дні (днів)
| PTZTE255.6A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 1W PMDS
Description: DIODE ZENER 5.6V 1W PMDS
на замовлення 3290 шт:
термін постачання 21-31 дні (днів)
| PTZTE256.2A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 1W PMDS
Description: DIODE ZENER 6.2V 1W PMDS
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| PTZTE256.8A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 1W PMDS
Description: DIODE ZENER 6.8V 1W PMDS
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
| PTZTE257.5A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.5V 1W PMDS
Description: DIODE ZENER 7.5V 1W PMDS
на замовлення 741 шт:
термін постачання 21-31 дні (днів)
| PTZTE258.2A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.2V 1W PMDS
Description: DIODE ZENER 8.2V 1W PMDS
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)
| PTZTE259.1B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 9.8V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 9.8 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Description: DIODE ZENER 9.8V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 9.8 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| QSH29TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 1.25W TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 100mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V
Resistor - Base (R1): 10kOhms
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Description: TRANS 2NPN PREBIAS 1.25W TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 100mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V
Resistor - Base (R1): 10kOhms
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.99 грн |
| 10+ | 51.56 грн |
| 100+ | 35.68 грн |
| 500+ | 27.98 грн |
| 1000+ | 23.81 грн |
| QSZ2TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 1.5A TSMT5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 300MHz, 280MHz
Supplier Device Package: TSMT5
Description: TRANS NPN/PNP 30V 1.5A TSMT5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 300MHz, 280MHz
Supplier Device Package: TSMT5
на замовлення 989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.02 грн |
| 10+ | 32.83 грн |
| 100+ | 21.21 грн |
| 500+ | 15.22 грн |
| QSZ4TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 2A 5TSMT
Description: TRANS NPN/PNP 30V 2A 5TSMT
на замовлення 1670 шт:
термін постачання 21-31 дні (днів)
| RB160L-90TE25 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 90V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товару немає в наявності
В кошику
од. на суму грн.
| RB162VA-20TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A TUMD2
Description: DIODE SCHOTTKY 20V 1A TUMD2
товару немає в наявності
В кошику
од. на суму грн.
| RB411VA-50TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 20V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RB450FT106 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE SCHOTTKY 40V 100MA UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 3719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 11+ | 27.68 грн |
| 100+ | 17.73 грн |
| 500+ | 12.60 грн |
| 1000+ | 11.30 грн |
| RB496EATR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 20V 1A TSMD5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: TSMD5
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 10 V
Description: DIODE ARRAY SCHOTT 20V 1A TSMD5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: TSMD5
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 10 V
на замовлення 8155 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.39 грн |
| 10+ | 35.52 грн |
| 100+ | 24.71 грн |
| 500+ | 18.11 грн |
| 1000+ | 14.72 грн |
| RB520SM-40T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 674938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.25 грн |
| 23+ | 13.51 грн |
| 100+ | 8.41 грн |
| 500+ | 5.83 грн |
| 1000+ | 5.16 грн |
| 2000+ | 4.60 грн |
| RB551V-30TE-17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Description: DIODE SCHOTTKY 20V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| RF051VA2STR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| RF073M2STR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 700MA PMDU
Description: DIODE GEN PURP 200V 700MA PMDU
на замовлення 7083 шт:
термін постачання 21-31 дні (днів)
| RF103L2STE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| RN739DT146 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE PIN HF SW 50V 50MA SOT-346
Description: DIODE PIN HF SW 50V 50MA SOT-346
на замовлення 2969 шт:
термін постачання 21-31 дні (днів)
| RPM841-H11E2A |
Виробник: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 7-SMD
Packaging: Cut Tape (CT)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.8mm x 2.4mm x 1.5mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
Description: MODULE IRDA 115.2KBPS 7-SMD
Packaging: Cut Tape (CT)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.8mm x 2.4mm x 1.5mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
товару немає в наявності
В кошику
од. на суму грн.
| RPM872-H14E2A |
![]() |
Виробник: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Description: MODULE IRDA 115.2KBPS 8SMD
товару немає в наявності
В кошику
од. на суму грн.
































