Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103512) > Сторінка 429 з 1726
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DTA143EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FResistors Included: R1 and R2 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
на замовлення 2218 шт: термін постачання 21-31 дні (днів) |
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DTA143XUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 200MW UMT3F |
на замовлення 4748 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTA144EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V EMT3FResistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 30 mA Supplier Device Package: EMT3F (SOT-416FL) DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) |
на замовлення 2558 шт: термін постачання 21-31 дні (днів) |
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DTB123YUT106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.5A UMT3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 2638 шт: термін постачання 21-31 дні (днів) |
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DTB543EETL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 12V 0.5A EMT3Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 260 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
на замовлення 4771 шт: термін постачання 21-31 дні (днів) |
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DTB743EETL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 150MW EMT3 |
на замовлення 2375 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTC114YEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 799 шт: термін постачання 21-31 дні (днів) |
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DTC115GKAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms |
на замовлення 2599 шт: термін постачання 21-31 дні (днів) |
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DTC115GUAT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Emitter Base (R2): 100 kOhms |
на замовлення 515 шт: термін постачання 21-31 дні (днів) |
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DTC115TKAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms |
на замовлення 2916 шт: термін постачання 21-31 дні (днів) |
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DTC123JEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 2770 шт: термін постачання 21-31 дні (днів) |
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DTC123TKAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistors Included: R1 Only |
на замовлення 2949 шт: термін постачання 21-31 дні (днів) |
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DTC124EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 1455 шт: термін постачання 21-31 дні (днів) |
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DTC124GKAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW SMT3 |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTC124GUAT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R2 Only |
на замовлення 1698 шт: термін постачання 21-31 дні (днів) |
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DTC124TUAT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3 |
на замовлення 2867 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTC125TUAT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 200 kOhms Resistors Included: R1 Only |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC143EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC143EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3F Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 81 шт: термін постачання 21-31 дні (днів) |
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DTC143XUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 2245 шт: термін постачання 21-31 дні (днів) |
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DTC144VUAT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3 |
на замовлення 2755 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTC623TUT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 20V 0.6A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 2.2 kOhms |
на замовлення 5890 шт: термін постачання 21-31 дні (днів) |
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DTC643TUT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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DTD143TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 40V 0.5A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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DTD523YETL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW EMT3 |
на замовлення 1963 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTD543EETL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 12V 0.5A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 5025 шт: термін постачання 21-31 дні (днів) |
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DTD543ZETL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 12V 0.5A EMT3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 260 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTD713ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW VMT3 |
на замовлення 7527 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTD723YMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW VMT3 |
на замовлення 3426 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTD743EETL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW EMT3 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTD743EMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 30V 0.2A VMT3Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 260 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EM6K31T2R | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 0.25A EMT6Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Current - Continuous Drain (Id) @ 25°C: 250mA Drain to Source Voltage (Vdss): 60V Power - Max: 150mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT6 Vgs(th) (Max) @ Id: 2.3V @ 1mA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V |
на замовлення 20190 шт: термін постачання 21-31 дні (днів) |
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EMA5T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT5 |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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EMD30T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 |
на замовлення 15830 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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EMG6T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V EMT5Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Cut Tape (CT) Supplier Device Package: EMT5 Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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EMP11T2R | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD6Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: EMD6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 6765 шт: термін постачання 21-31 дні (днів) |
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EMX26T2R | Rohm Semiconductor |
Description: TRANS 2NPN 50V 0.15A 6EMTSupplier Device Package: EMT6 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Current - Collector Cutoff (Max): 300nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 26870 шт: термін постачання 21-31 дні (днів) |
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FMA1AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5Part Status: Active Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 2611 шт: термін постачання 21-31 дні (днів) |
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FMA3AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5 |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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FMG3AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V SMT5Supplier Device Package: SMT5 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 857 шт: термін постачання 21-31 дні (днів) |
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FMY4AT148 | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 5SMTPackaging: Cut Tape (CT) Supplier Device Package: SMT5 Frequency - Transition: 140MHz, 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Current - Collector (Ic) (Max): 150mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 |
на замовлення 1885 шт: термін постачання 21-31 дні (днів) |
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FTZ5.6ET148 | Rohm Semiconductor |
Description: DIODE ZENER ARRAY 5.6V SMD5Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Power - Max: 200 mW Supplier Device Package: SMD5 Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Configuration: 2 Pair Common Anode Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 4397 шт: термін постачання 21-31 дні (днів) |
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IMH5AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6Supplier Device Package: SMT6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IMT1AT108 | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6SMTTransistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) Supplier Device Package: SMT6 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 300mW Operating Temperature: 150°C (TJ) |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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IMT3AT108 | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6SMTSupplier Device Package: SMT6 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 1169 шт: термін постачання 21-31 дні (днів) |
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IMX1T108 | Rohm Semiconductor |
Description: TRANS 2NPN DUAL 50V 150MA SMT6Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SMT6 Part Status: Not For New Designs |
на замовлення 1180 шт: термін постачання 21-31 дні (днів) |
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MMSTA13T146 | Rohm Semiconductor |
Description: TRANS NPN 30V 0.3A SOT-346 SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 2785 шт: термін постачання 21-31 дні (днів) |
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PTZTE2510A | Rohm Semiconductor |
Description: DIODE ZENER 10V 1W PMDSTolerance: ±6% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: PMDS Part Status: Not For New Designs Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2512A | Rohm Semiconductor |
Description: DIODE ZENER 12V 1W PMDSTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 9 V |
на замовлення 489 шт: термін постачання 21-31 дні (днів) |
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PTZTE2513A | Rohm Semiconductor |
Description: DIODE ZENER 13V 1W PMDS |
на замовлення 372 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2515A | Rohm Semiconductor |
Description: DIODE ZENER 15V 1W PMDSTolerance: ±6% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 11 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2516A | Rohm Semiconductor |
Description: DIODE ZENER 16V 1W PMDSTolerance: ±6% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2518A | Rohm Semiconductor |
Description: DIODE ZENER 18V 1W PMDSTolerance: ±6% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 1756 шт: термін постачання 21-31 дні (днів) |
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PTZTE2520A | Rohm Semiconductor |
Description: DIODE ZENER 20V 1W PMDS |
на замовлення 1100 шт: термін постачання 21-31 дні (днів) |
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PTZTE2522A | Rohm Semiconductor |
Description: DIODE ZENER 22V 1W PMDS |
на замовлення 1446 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2524A | Rohm Semiconductor |
Description: DIODE ZENER 24V 1W PMDS |
на замовлення 1469 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2527A | Rohm Semiconductor |
Description: DIODE ZENER 27V 1W PMDS |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2533A | Rohm Semiconductor |
Description: DIODE ZENER 33V 1W PMDS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2536A | Rohm Semiconductor |
Description: DIODE ZENER 36V 1W PMDS |
на замовлення 1275 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2539A | Rohm Semiconductor |
Description: DIODE ZENER 39V 1W PMDS |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| DTA143EUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V UMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
на замовлення 2218 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.66 грн |
| 41+ | 7.54 грн |
| 100+ | 4.67 грн |
| 500+ | 3.19 грн |
| 1000+ | 2.80 грн |
| DTA143XUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW UMT3F
Description: TRANS PREBIAS PNP 200MW UMT3F
на замовлення 4748 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTA144EEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V EMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 30 mA
Supplier Device Package: EMT3F (SOT-416FL)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V EMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 30 mA
Supplier Device Package: EMT3F (SOT-416FL)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
на замовлення 2558 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 34+ | 9.14 грн |
| 100+ | 5.65 грн |
| 500+ | 3.88 грн |
| 1000+ | 3.42 грн |
| DTB123YUT106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A UMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.5A UMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 2638 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.86 грн |
| 17+ | 18.06 грн |
| 100+ | 11.43 грн |
| 500+ | 8.01 грн |
| 1000+ | 7.13 грн |
| DTB543EETL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 4771 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.60 грн |
| 15+ | 20.72 грн |
| 100+ | 13.14 грн |
| 500+ | 9.23 грн |
| 1000+ | 8.23 грн |
| DTB743EETL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW EMT3
Description: TRANS PREBIAS PNP 150MW EMT3
на замовлення 2375 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTC114YEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 799 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 31+ | 10.13 грн |
| 100+ | 6.24 грн |
| 500+ | 4.29 грн |
| DTC115GKAT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
на замовлення 2599 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.91 грн |
| 57+ | 5.41 грн |
| 100+ | 3.66 грн |
| 500+ | 2.60 грн |
| 1000+ | 2.32 грн |
| DTC115GUAT106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.61 грн |
| 32+ | 9.75 грн |
| 100+ | 6.00 грн |
| 500+ | 4.12 грн |
| DTC115TKAT146 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
на замовлення 2916 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.91 грн |
| 57+ | 5.41 грн |
| 100+ | 3.66 грн |
| 500+ | 2.60 грн |
| 1000+ | 2.32 грн |
| DTC123JEBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 2770 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.03 грн |
| 35+ | 8.91 грн |
| 100+ | 5.52 грн |
| 500+ | 3.80 грн |
| 1000+ | 3.34 грн |
| DTC123TKAT146 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistors Included: R1 Only
на замовлення 2949 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 33+ | 9.45 грн |
| 100+ | 5.82 грн |
| 500+ | 3.99 грн |
| 1000+ | 3.51 грн |
| DTC124EEBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 150MW EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.36 грн |
| 22+ | 13.87 грн |
| 100+ | 6.77 грн |
| 500+ | 5.30 грн |
| 1000+ | 3.68 грн |
| DTC124GKAT146 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW SMT3
Description: TRANS PREBIAS NPN 200MW SMT3
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTC124GUAT106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R2 Only
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R2 Only
на замовлення 1698 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.61 грн |
| 32+ | 9.68 грн |
| 100+ | 6.01 грн |
| 500+ | 4.14 грн |
| 1000+ | 3.65 грн |
| DTC124TUAT106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Description: TRANS PREBIAS NPN 200MW UMT3
на замовлення 2867 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTC125TUAT106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 200 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 200 kOhms
Resistors Included: R1 Only
товару немає в наявності
В кошику
од. на суму грн.
| DTC143EEBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 32+ | 9.52 грн |
| 100+ | 5.90 грн |
| 500+ | 4.05 грн |
| 1000+ | 3.57 грн |
| DTC143EUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 81 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.45 грн |
| 40+ | 7.77 грн |
| DTC143XUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 2245 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 42+ | 7.31 грн |
| 100+ | 4.50 грн |
| 500+ | 3.08 грн |
| 1000+ | 2.70 грн |
| DTC144VUAT106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Description: TRANS PREBIAS NPN 200MW UMT3
на замовлення 2755 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTC623TUT106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Description: TRANS PREBIAS NPN 20V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
на замовлення 5890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.90 грн |
| 15+ | 20.42 грн |
| 100+ | 12.23 грн |
| 500+ | 10.63 грн |
| 1000+ | 7.23 грн |
| DTC643TUT106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.06 грн |
| 13+ | 23.62 грн |
| 100+ | 16.07 грн |
| DTD143TKT146 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 40V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS NPN 40V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 55 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.48 грн |
| 15+ | 21.03 грн |
| DTD523YETL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW EMT3
Description: TRANS PREBIAS NPN 150MW EMT3
на замовлення 1963 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTD543EETL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 5025 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.44 грн |
| 16+ | 19.12 грн |
| 100+ | 12.14 грн |
| 500+ | 8.52 грн |
| 1000+ | 7.60 грн |
| DTD543ZETL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.44 грн |
| 16+ | 19.12 грн |
| 100+ | 12.14 грн |
| 500+ | 8.52 грн |
| 1000+ | 7.60 грн |
| DTD713ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW VMT3
Description: TRANS PREBIAS NPN 150MW VMT3
на замовлення 7527 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTD723YMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW VMT3
Description: TRANS PREBIAS NPN 150MW VMT3
на замовлення 3426 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTD743EETL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW EMT3
Description: TRANS PREBIAS NPN 150MW EMT3
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTD743EMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 30V 0.2A VMT3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 30V 0.2A VMT3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| EM6K31T2R |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A EMT6
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 250mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Vgs(th) (Max) @ Id: 2.3V @ 1mA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Description: MOSFET 2N-CH 60V 0.25A EMT6
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 250mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Vgs(th) (Max) @ Id: 2.3V @ 1mA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
на замовлення 20190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.01 грн |
| 10+ | 31.62 грн |
| 100+ | 20.36 грн |
| 500+ | 14.57 грн |
| 1000+ | 13.11 грн |
| 2000+ | 11.88 грн |
| EMA5T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT5
Description: TRANS 2PNP PREBIAS 0.15W EMT5
на замовлення 70 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.39 грн |
| 12+ | 26.13 грн |
| EMD30T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
на замовлення 15830 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EMG6T2R |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT5
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: EMT5
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Description: TRANS PREBIAS 2NPN 50V EMT5
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: EMT5
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
товару немає в наявності
В кошику
од. на суму грн.
| EMP11T2R |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD6
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA EMD6
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 6765 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.06 грн |
| 17+ | 17.98 грн |
| 100+ | 11.36 грн |
| 500+ | 7.96 грн |
| 1000+ | 6.87 грн |
| 2000+ | 5.77 грн |
| EMX26T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.15A 6EMT
Supplier Device Package: EMT6
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 300nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN 50V 0.15A 6EMT
Supplier Device Package: EMT6
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 300nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 26870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.81 грн |
| 11+ | 28.72 грн |
| 100+ | 19.95 грн |
| 500+ | 14.62 грн |
| 1000+ | 11.88 грн |
| 2000+ | 10.62 грн |
| FMA1AT148 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 2611 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.98 грн |
| 11+ | 29.48 грн |
| 100+ | 20.09 грн |
| 500+ | 14.14 грн |
| 1000+ | 10.60 грн |
| FMA3AT148 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Description: TRANS PREBIAS DUAL PNP SMT5
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FMG3AT148 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V SMT5
Supplier Device Package: SMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2NPN 50V SMT5
Supplier Device Package: SMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 857 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.93 грн |
| 13+ | 24.68 грн |
| 100+ | 15.79 грн |
| 500+ | 11.20 грн |
| FMY4AT148 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 5SMT
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 140MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Description: TRANS NPN/PNP 50V 5SMT
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 140MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
на замовлення 1885 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.86 грн |
| 16+ | 19.81 грн |
| 100+ | 13.38 грн |
| 500+ | 9.76 грн |
| 1000+ | 8.83 грн |
| FTZ5.6ET148 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER ARRAY 5.6V SMD5
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 200 mW
Supplier Device Package: SMD5
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 2 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER ARRAY 5.6V SMD5
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 200 mW
Supplier Device Package: SMD5
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 2 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 4397 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.23 грн |
| 25+ | 12.57 грн |
| IMH5AT108 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IMT1AT108 |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6SMT
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Supplier Device Package: SMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Description: TRANS 2PNP 50V 0.15A 6SMT
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Supplier Device Package: SMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.18 грн |
| IMT3AT108 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6SMT
Supplier Device Package: SMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS 2PNP 50V 0.15A 6SMT
Supplier Device Package: SMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 1169 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.48 грн |
| 16+ | 19.58 грн |
| 100+ | 9.86 грн |
| 500+ | 8.20 грн |
| 1000+ | 6.38 грн |
| IMX1T108 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN DUAL 50V 150MA SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SMT6
Part Status: Not For New Designs
Description: TRANS 2NPN DUAL 50V 150MA SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SMT6
Part Status: Not For New Designs
на замовлення 1180 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 15+ | 20.42 грн |
| 100+ | 13.77 грн |
| 500+ | 10.05 грн |
| 1000+ | 9.09 грн |
| MMSTA13T146 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 0.3A SOT-346 SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 0.3A SOT-346 SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 2785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.06 грн |
| 14+ | 22.40 грн |
| 100+ | 13.41 грн |
| 500+ | 11.65 грн |
| 1000+ | 7.92 грн |
| PTZTE2510A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 10V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Part Status: Not For New Designs
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Description: DIODE ZENER 10V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Part Status: Not For New Designs
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2512A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 12V 1W PMDS
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Description: DIODE ZENER 12V 1W PMDS
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
на замовлення 489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.75 грн |
| 10+ | 34.51 грн |
| 100+ | 22.28 грн |
| PTZTE2513A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 13V 1W PMDS
Description: DIODE ZENER 13V 1W PMDS
на замовлення 372 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE2515A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 15V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Description: DIODE ZENER 15V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2516A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Description: DIODE ZENER 16V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2518A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 18V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 18V 1W PMDS
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 1756 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.80 грн |
| 10+ | 32.15 грн |
| 100+ | 20.78 грн |
| 500+ | 14.88 грн |
| PTZTE2520A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 20V 1W PMDS
Description: DIODE ZENER 20V 1W PMDS
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.98 грн |
| 10+ | 31.54 грн |
| 100+ | 23.58 грн |
| 500+ | 17.39 грн |
| PTZTE2522A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 22V 1W PMDS
Description: DIODE ZENER 22V 1W PMDS
на замовлення 1446 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE2524A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 24V 1W PMDS
Description: DIODE ZENER 24V 1W PMDS
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE2527A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 1W PMDS
Description: DIODE ZENER 27V 1W PMDS
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE2533A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 33V 1W PMDS
Description: DIODE ZENER 33V 1W PMDS
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2536A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 36V 1W PMDS
Description: DIODE ZENER 36V 1W PMDS
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE2539A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 39V 1W PMDS
Description: DIODE ZENER 39V 1W PMDS
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.

































