Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (106407) > Сторінка 753 з 1774
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BD8374HFP-MTR | Rohm Semiconductor |
Description: IC LED DRVR LIN PWM 500MA HRP7Packaging: Cut Tape (CT) Package / Case: HRP-7 (7 Leads + Tab) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100Hz ~ 5kHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: HRP7 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 42V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2188 шт: термін постачання 21-31 дні (днів) |
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BU90R104-E2 | Rohm Semiconductor |
Description: IC RX/DESERIALIZER LVDS 64TQFPPart Status: Active Supplier Device Package: 64-TQFP (10x10) Number of Inputs: 5 Input Type: LVDS Data Rate: 3.92Gbps Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Function: Deserializer Number of Outputs: 35 Mounting Type: Surface Mount Output Type: LVCMOS Package / Case: 64-LQFP Packaging: Cut Tape (CT) |
на замовлення 1770 шт: термін постачання 21-31 дні (днів) |
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BU9796AMUV-E2 | Rohm Semiconductor |
Description: IC DRVR 48 SEGMENT VQFN024V4040Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Display Type: LCD Mounting Type: Surface Mount Interface: 2-Wire Serial Configuration: 48 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V ~ 5.5V Supplier Device Package: VQFN024V4040 Part Status: Active Current - Supply: 12.5 µA |
на замовлення 30327 шт: термін постачання 21-31 дні (днів) |
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RE1J002YNTCL | Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V |
на замовлення 12099 шт: термін постачання 21-31 дні (днів) |
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SML-522MU8WT86 | Rohm Semiconductor |
Description: LED GREEN/RED DIFFUSED 1315 SMDLens Size: 1.30mm x 1.10mm Lens Style: Rectangle with Flat Top Part Status: Active Lens Transparency: Diffused Supplier Device Package: 1315 (0605) Wavelength - Dominant: 572nm Green, 620nm Red Height (Max): 0.70mm Current - Test: 20mA Green, 20mA Red Lens Color: White Voltage - Forward (Vf) (Typ): 2.2V Green, 2.2V Red Configuration: Independent Millicandela Rating: 40mcd Green, 63mcd Red Mounting Type: Surface Mount Size / Dimension: 1.50mm L x 1.30mm W Color: Green, Red Package / Case: 0605 (1513 Metric) Packaging: Cut Tape (CT) |
на замовлення 11207 шт: термін постачання 21-31 дні (днів) |
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SML-H12M8TT86 | Rohm Semiconductor |
Description: LED GREEN CLEAR 0805 SMDPackaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Color: Green Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 25mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 572nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm |
на замовлення 35822 шт: термін постачання 21-31 дні (днів) |
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SML-H12V8TT86C | Rohm Semiconductor |
Description: LED RED CLEAR 2012 SMDPackaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Color: Red Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 25mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 630nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm |
на замовлення 1973 шт: термін постачання 21-31 дні (днів) |
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MSL0402RGBU1 | Rohm Semiconductor |
Description: LED RGB DIFFUSED 1816 SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Color: Red, Green, Blue (RGB) Size / Dimension: 1.80mm L x 1.60mm W Mounting Type: Surface Mount Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue Configuration: Independent Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue Lens Color: White Current - Test: 20mA Red, 20mA Green, 20mA Blue Height (Max): 0.60mm Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue Supplier Device Package: 1816 (0706) Lens Transparency: Diffused Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.80mm x 1.60mm |
на замовлення 28851 шт: термін постачання 21-31 дні (днів) |
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QH8KA4TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3344 шт: термін постачання 21-31 дні (днів) |
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R6009KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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R6020KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
на замовлення 3286 шт: термін постачання 21-31 дні (днів) |
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R6024KNJTL | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 24A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RE1C002ZPTL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V |
на замовлення 2991 шт: термін постачання 21-31 дні (днів) |
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RF4E100AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A HUML2020L8Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V |
на замовлення 5875 шт: термін постачання 21-31 дні (днів) |
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RQ5C060BCTCL | Rohm Semiconductor |
Description: MOSFET P-CHANNEL 20V 6A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V |
на замовлення 1785 шт: термін постачання 21-31 дні (днів) |
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RQ5E025ATTCL | Rohm Semiconductor |
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V |
на замовлення 6384 шт: термін постачання 21-31 дні (днів) |
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RQ5E030AJTCL | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 3A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V |
на замовлення 19179 шт: термін постачання 21-31 дні (днів) |
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RQ5E070BNTCL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V |
на замовлення 761 шт: термін постачання 21-31 дні (днів) |
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RQ6E085BNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8.5A SOT457Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
на замовлення 1639 шт: термін постачання 21-31 дні (днів) |
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RQ7E055ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 5.5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V |
на замовлення 6161 шт: термін постачання 21-31 дні (днів) |
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RS3E135BNGZETB | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 9.5A 8SOPCurrent - Continuous Drain (Id) @ 25°C: 9.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V |
на замовлення 4961 шт: термін постачання 21-31 дні (днів) |
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RYC002N05T316 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 50V 200MA SST3Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: SST3 Vgs(th) (Max) @ Id: 800mV @ 1mA Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 19969 шт: термін постачання 21-31 дні (днів) |
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UT6JA2TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 4A HUML2020L8Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 7117 шт: термін постачання 21-31 дні (днів) |
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UT6K3TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8Drain to Source Voltage (Vdss): 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A |
на замовлення 5345 шт: термін постачання 21-31 дні (днів) |
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UT6MA3TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 20V 5A HUML2020L8Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 5436 шт: термін постачання 21-31 дні (днів) |
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MSL0402RGBU1 | Rohm Semiconductor |
Description: LED RGB DIFFUSED 1816 SMDPackaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Color: Red, Green, Blue (RGB) Size / Dimension: 1.80mm L x 1.60mm W Mounting Type: Surface Mount Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue Configuration: Independent Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue Lens Color: White Current - Test: 20mA Red, 20mA Green, 20mA Blue Height (Max): 0.60mm Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue Supplier Device Package: 1816 (0706) Lens Transparency: Diffused Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.80mm x 1.60mm |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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QH8JA1TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 5A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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QH8KA1TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 4.5A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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QH8KA4TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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R6009KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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R6009KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO220FMPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
на замовлення 247 шт: термін постачання 21-31 дні (днів) |
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R6011KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 11A TO220FMPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
на замовлення 373 шт: термін постачання 21-31 дні (днів) |
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R6015KNZC8 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 15A TO3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||
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R6020KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A LPTSInput Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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R6020KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 186 шт: термін постачання 21-31 дні (днів) |
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R6020KNZC8 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 20A TO3PFDrive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||
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R6024KNJTL | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 24A LPTSInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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R6024KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 24A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 169 шт: термін постачання 21-31 дні (днів) |
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R6024KNZ1C9 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 24A TO247Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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R6024KNZC8 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 24A TO3PF |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||
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R6030KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 348 шт: термін постачання 21-31 дні (днів) |
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R6030KNZ1C9 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 30A TO247 |
на замовлення 260 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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R6030KNZC8 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 30A TO3PFInput Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||
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R6035KNZC8 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 35A TO3PF |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RE1C002ZPTL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA EMT3FFET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Active Supplier Device Package: EMT3F (SOT-416FL) Vgs(th) (Max) @ Id: 1V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RF4E100AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A HUML2020L8Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RF6C055BCTCR | Rohm Semiconductor |
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RF6E045AJTCR | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 4.5A TUMT6Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ5C060BCTCL | Rohm Semiconductor |
Description: MOSFET P-CHANNEL 20V 6A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RQ5E025ATTCL | Rohm Semiconductor |
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RQ5E030AJTCL | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 3A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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RQ5E070BNTCL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RQ6E085BNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8.5A SOT457Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RQ7E055ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 5.5A TSMT8Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ7E110AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 10mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RS3E135BNGZETB | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 9.5A 8SOPTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) FET Type: N-Channel |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RYC002N05T316 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 50V 200MA SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: SST3 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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UT6JA2TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 4A HUML2020L8Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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UT6K3TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UT6MA3TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 20V 5A HUML2020L8Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| BD8374HFP-MTR |
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Виробник: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2188 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.71 грн |
| 10+ | 171.56 грн |
| 25+ | 157.45 грн |
| 100+ | 133.20 грн |
| 250+ | 126.26 грн |
| 500+ | 122.08 грн |
| 1000+ | 116.69 грн |
| BU90R104-E2 |
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Виробник: Rohm Semiconductor
Description: IC RX/DESERIALIZER LVDS 64TQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
Number of Inputs: 5
Input Type: LVDS
Data Rate: 3.92Gbps
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 35
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
Description: IC RX/DESERIALIZER LVDS 64TQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
Number of Inputs: 5
Input Type: LVDS
Data Rate: 3.92Gbps
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 35
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 479.69 грн |
| 10+ | 356.48 грн |
| 25+ | 330.08 грн |
| 100+ | 282.54 грн |
| 250+ | 269.56 грн |
| 500+ | 261.74 грн |
| BU9796AMUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC DRVR 48 SEGMENT VQFN024V4040
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 48 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: VQFN024V4040
Part Status: Active
Current - Supply: 12.5 µA
Description: IC DRVR 48 SEGMENT VQFN024V4040
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 48 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: VQFN024V4040
Part Status: Active
Current - Supply: 12.5 µA
на замовлення 30327 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.03 грн |
| 10+ | 73.97 грн |
| 25+ | 67.15 грн |
| 100+ | 55.96 грн |
| 250+ | 52.60 грн |
| 500+ | 50.57 грн |
| 1000+ | 49.28 грн |
| RE1J002YNTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Description: MOSFET N-CH 50V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
на замовлення 12099 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 22+ | 14.19 грн |
| 50+ | 10.19 грн |
| 100+ | 8.34 грн |
| 500+ | 6.17 грн |
| SML-522MU8WT86 |
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Виробник: Rohm Semiconductor
Description: LED GREEN/RED DIFFUSED 1315 SMD
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 1315 (0605)
Wavelength - Dominant: 572nm Green, 620nm Red
Height (Max): 0.70mm
Current - Test: 20mA Green, 20mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.2V Green, 2.2V Red
Configuration: Independent
Millicandela Rating: 40mcd Green, 63mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Green, Red
Package / Case: 0605 (1513 Metric)
Packaging: Cut Tape (CT)
Description: LED GREEN/RED DIFFUSED 1315 SMD
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 1315 (0605)
Wavelength - Dominant: 572nm Green, 620nm Red
Height (Max): 0.70mm
Current - Test: 20mA Green, 20mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.2V Green, 2.2V Red
Configuration: Independent
Millicandela Rating: 40mcd Green, 63mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Green, Red
Package / Case: 0605 (1513 Metric)
Packaging: Cut Tape (CT)
на замовлення 11207 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.73 грн |
| 11+ | 29.29 грн |
| 100+ | 19.16 грн |
| 500+ | 14.26 грн |
| 1000+ | 13.12 грн |
| 2000+ | 12.19 грн |
| SML-H12M8TT86 |
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Виробник: Rohm Semiconductor
Description: LED GREEN CLEAR 0805 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Description: LED GREEN CLEAR 0805 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
на замовлення 35822 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.57 грн |
| 15+ | 20.15 грн |
| 100+ | 14.39 грн |
| 500+ | 11.05 грн |
| 1000+ | 10.25 грн |
| SML-H12V8TT86C |
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Виробник: Rohm Semiconductor
Description: LED RED CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Red
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 630nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Description: LED RED CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Red
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 630nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
на замовлення 1973 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.16 грн |
| 22+ | 14.04 грн |
| 100+ | 9.90 грн |
| 500+ | 7.52 грн |
| 1000+ | 6.93 грн |
| MSL0402RGBU1 |
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Виробник: Rohm Semiconductor
Description: LED RGB DIFFUSED 1816 SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
Description: LED RGB DIFFUSED 1816 SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
на замовлення 28851 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.06 грн |
| 10+ | 44.00 грн |
| 100+ | 32.40 грн |
| 500+ | 25.56 грн |
| 1000+ | 23.98 грн |
| QH8KA4TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3344 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.00 грн |
| 10+ | 70.42 грн |
| 100+ | 47.01 грн |
| 500+ | 34.69 грн |
| 1000+ | 31.65 грн |
| R6009KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.63 грн |
| 10+ | 132.92 грн |
| R6020KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 600V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 3286 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 327.63 грн |
| 10+ | 208.17 грн |
| 100+ | 147.33 грн |
| 500+ | 119.12 грн |
| R6024KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 24A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| RE1C002ZPTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
на замовлення 2991 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| 21+ | 14.79 грн |
| 100+ | 9.28 грн |
| 500+ | 6.45 грн |
| 1000+ | 5.72 грн |
| RF4E100AJTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
на замовлення 5875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.90 грн |
| 10+ | 61.44 грн |
| 100+ | 40.74 грн |
| 500+ | 29.87 грн |
| 1000+ | 27.17 грн |
| RQ5C060BCTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
на замовлення 1785 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 50.95 грн |
| 50+ | 37.77 грн |
| 100+ | 31.43 грн |
| 500+ | 24.39 грн |
| RQ5E025ATTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
на замовлення 6384 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.68 грн |
| 12+ | 26.87 грн |
| 50+ | 19.58 грн |
| 100+ | 16.15 грн |
| 500+ | 12.22 грн |
| RQ5E030AJTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
на замовлення 19179 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.73 грн |
| 10+ | 30.80 грн |
| 50+ | 22.48 грн |
| 100+ | 18.57 грн |
| 500+ | 14.12 грн |
| RQ5E070BNTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
на замовлення 761 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.22 грн |
| 10+ | 52.00 грн |
| 50+ | 38.49 грн |
| 100+ | 32.03 грн |
| 500+ | 24.81 грн |
| RQ6E085BNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
на замовлення 1639 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.84 грн |
| 10+ | 57.89 грн |
| 100+ | 38.43 грн |
| 500+ | 28.22 грн |
| 1000+ | 25.70 грн |
| RQ7E055ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Description: MOSFET P-CH 30V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 6161 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.81 грн |
| 10+ | 57.14 грн |
| 100+ | 42.68 грн |
| 500+ | 33.81 грн |
| 1000+ | 30.86 грн |
| RS3E135BNGZETB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
на замовлення 4961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.71 грн |
| 10+ | 73.59 грн |
| 100+ | 49.14 грн |
| 500+ | 36.27 грн |
| 1000+ | 33.10 грн |
| RYC002N05T316 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 50V 200MA SST3
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 800mV @ 1mA
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 50V 200MA SST3
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 800mV @ 1mA
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 19969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 18+ | 17.51 грн |
| 100+ | 11.05 грн |
| 500+ | 7.72 грн |
| 1000+ | 6.87 грн |
| UT6JA2TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 7117 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.35 грн |
| 10+ | 53.82 грн |
| 100+ | 35.47 грн |
| 500+ | 25.86 грн |
| 1000+ | 23.47 грн |
| UT6K3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A
на замовлення 5345 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 51.02 грн |
| 100+ | 33.50 грн |
| 500+ | 24.37 грн |
| 1000+ | 22.09 грн |
| UT6MA3TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 5436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.54 грн |
| 10+ | 60.23 грн |
| 100+ | 39.85 грн |
| 500+ | 29.19 грн |
| 1000+ | 26.55 грн |
| MSL0402RGBU1 |
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Виробник: Rohm Semiconductor
Description: LED RGB DIFFUSED 1816 SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
Description: LED RGB DIFFUSED 1816 SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.73 грн |
| 6000+ | 23.61 грн |
| 9000+ | 23.00 грн |
| 15000+ | 21.18 грн |
| QH8JA1TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 20V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| QH8KA1TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| QH8KA4TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 30.76 грн |
| R6009KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6009KNX |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.25 грн |
| 10+ | 119.10 грн |
| 100+ | 81.88 грн |
| R6011KNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.22 грн |
| 10+ | 125.75 грн |
| 100+ | 86.35 грн |
| R6015KNZC8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| R6020KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 20A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 117.34 грн |
| 2000+ | 105.98 грн |
| R6020KNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 600V 20A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.39 грн |
| 10+ | 177.60 грн |
| 50+ | 137.45 грн |
| 100+ | 116.85 грн |
| R6020KNZC8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 20A TO3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Description: MOSFET N-CHANNEL 600V 20A TO3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| R6024KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CHANNEL 600V 24A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6024KNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 600V 24A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.98 грн |
| 10+ | 152.84 грн |
| 100+ | 106.66 грн |
| R6024KNZ1C9 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CHANNEL 600V 24A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 322.93 грн |
| R6024KNZC8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A TO3PF
Description: MOSFET N-CHANNEL 600V 24A TO3PF
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| R6030KNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 600V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 329.99 грн |
| 10+ | 210.51 грн |
| 100+ | 149.67 грн |
| R6030KNZ1C9 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 30A TO247
Description: MOSFET N-CHANNEL 600V 30A TO247
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
| R6030KNZC8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CHANNEL 600V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| R6035KNZC8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 35A TO3PF
Description: MOSFET N-CHANNEL 600V 35A TO3PF
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
| RE1C002ZPTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3F
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: EMT3F (SOT-416FL)
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Description: MOSFET P-CH 20V 200MA EMT3F
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: EMT3F (SOT-416FL)
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RF4E100AJTCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Description: MOSFET N-CH 30V 10A HUML2020L8
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 26.29 грн |
| RF6C055BCTCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RF6E045AJTCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 4.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CHANNEL 30V 4.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.61 грн |
| RQ5C060BCTCL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RQ5E025ATTCL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.33 грн |
| RQ5E030AJTCL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.02 грн |
| 9000+ | 10.09 грн |
| RQ5E070BNTCL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RQ6E085BNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RQ7E055ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 5.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 29.35 грн |
| RQ7E110AJTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RS3E135BNGZETB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.83 грн |
| RYC002N05T316 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.39 грн |
| 6000+ | 5.57 грн |
| 9000+ | 5.27 грн |
| 15000+ | 4.63 грн |
| UT6JA2TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 22.61 грн |
| 6000+ | 20.15 грн |
| UT6K3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| UT6MA3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.66 грн |

























