Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102215) > Сторінка 753 з 1704
| Фото | Назва | Виробник | Інформація |
Доступність |
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DAN217UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 200 nA @ 70 V |
на замовлення 80651 шт: термін постачання 21-31 дні (днів) |
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DAN217WMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD3F Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
на замовлення 24280 шт: термін постачання 21-31 дні (днів) |
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DAP202UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
на замовлення 2838 шт: термін постачання 21-31 дні (днів) |
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DTA013ZEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.15W SC89Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA013ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.2W SC85 |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DTA024XUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.2W UMT3F |
на замовлення 2446 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DTA125TKAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 200 kOhms |
на замовлення 2971 шт: термін постачання 21-31 дні (днів) |
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DTC013ZEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 8743 шт: термін постачання 21-31 дні (днів) |
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DTC013ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.15W VMT3 |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DTC013ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 8784 шт: термін постачання 21-31 дні (днів) |
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DTC024XMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.15W VMT3 |
на замовлення 7035 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DTC024XUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.2W UMT3F |
на замовлення 2044 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EDZVFHT2R12B | Rohm Semiconductor |
Description: DIODE ZENER 12V 150MW EMD2Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 9 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 21413 шт: термін постачання 21-31 дні (днів) |
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EMB51T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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EMB61T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EMB75T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD53T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD59T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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EMD62T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 Part Status: Active |
на замовлення 5892 шт: термін постачання 21-31 дні (днів) |
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EMH59T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EMH60T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
на замовлення 47960 шт: термін постачання 21-31 дні (днів) |
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EMH61T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 334 шт: термін постачання 21-31 дні (днів) |
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EMH75T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EMT51T2R | Rohm Semiconductor |
Description: TRANS 2PNP 20V 0.2A 6EMT |
на замовлення 5813 шт: термін постачання 21-31 дні (днів) |
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EMX52T2R | Rohm Semiconductor |
Description: TRANS 2NPN 50V 0.1A EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 350MHz Supplier Device Package: EMT6 Part Status: Active |
на замовлення 12985 шт: термін постачання 21-31 дні (днів) |
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EMZ51T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 400MHz, 350MHz Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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LM4559FVT-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 3.3mA Slew Rate: 3.5V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-TSSOP-B Part Status: Active Number of Circuits: 2 Voltage - Supply Span (Min): 8 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LM4565FVM-GTR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 4.5mA Slew Rate: 5V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 70 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 160 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 36 V |
на замовлення 2578 шт: термін постачання 21-31 дні (днів) |
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LMR341G-GTR | Rohm Semiconductor |
Description: IC CMOS 1 CIRCUIT 6SSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 80µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 6-SSOP Number of Circuits: 1 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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LMR342F-GE2 | Rohm Semiconductor |
Description: IC CMOS 2 CIRCUIT 8SOP |
на замовлення 851 шт: термін постачання 21-31 дні (днів) |
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LMR342FVM-GTR | Rohm Semiconductor |
Description: IC OP AMP GROUND SENSE 8MSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR342FVT-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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LMR344FJ-GE2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14SOPJPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 400µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 14-SOPJ Number of Circuits: 4 Current - Output / Channel: 113 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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LMR344FVJ-E2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 400µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 14-TSSOP-BJ Number of Circuits: 4 Current - Output / Channel: 113 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LMR822F-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 650µA Slew Rate: 2V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOP Number of Circuits: 2 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1970 шт: термін постачання 21-31 дні (днів) |
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LMR822FJ-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT SOP8JPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 650µA Slew Rate: 2V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOP-J Part Status: Active Number of Circuits: 2 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1766 шт: термін постачання 21-31 дні (днів) |
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LMR822FV-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 8SSOP |
на замовлення 2460 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR824F-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 4 CIRCUIT 14SOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 1.13mA Slew Rate: 2V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LMR824FJ-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING SOP14J |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR824FVJ-E2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 14TSSOP |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR932FVJ-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 8TSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR932FVM-GTR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 140µA Slew Rate: 0.35V/µs Gain Bandwidth Product: 1.4 MHz Current - Input Bias: 5 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-MSOP Number of Circuits: 2 Current - Output / Channel: 90 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
на замовлення 6012 шт: термін постачання 21-31 дні (днів) |
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QH8MA3TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QS5W1TR | Rohm Semiconductor |
Description: TRANS 2NPN 30V 3A TSMT5 |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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QS5W2TR | Rohm Semiconductor |
Description: TRANS 2NPN 50V 3A TSMT5 |
на замовлення 268 шт: термін постачання 21-31 дні (днів) |
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QS5Y1TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 30V 3A TSMT5 |
на замовлення 2595 шт: термін постачання 21-31 дні (днів) |
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QS6Z5TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 1A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 1.25W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz, 400MHz Supplier Device Package: TSMT6 (SC-95) |
на замовлення 3683 шт: термін постачання 21-31 дні (днів) |
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QS8K13TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 6A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 2852 шт: термін постачання 21-31 дні (днів) |
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RB050L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1406 шт: термін постачання 21-31 дні (днів) |
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RB050L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 3277 шт: термін постачання 21-31 дні (днів) |
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RB055L-30DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 293 шт: термін постачання 21-31 дні (днів) |
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RB055L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 2730 шт: термін постачання 21-31 дні (днів) |
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RB058L150TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 1035 шт: термін постачання 21-31 дні (днів) |
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RB058L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 439 шт: термін постачання 21-31 дні (днів) |
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RB058L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Current - Reverse Leakage @ Vr: 4 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 4304 шт: термін постачання 21-31 дні (днів) |
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RB060L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDS Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1267 шт: термін постачання 21-31 дні (днів) |
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RB060M-40DDTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB060M-60DDTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 2A PMDU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB068L100DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 2A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3737 шт: термін постачання 21-31 дні (днів) |
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RB068L150TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 2A PMDS |
на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| DAN217UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
на замовлення 80651 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.96 грн |
| 33+ | 9.95 грн |
| 100+ | 6.54 грн |
| 500+ | 5.31 грн |
| 1000+ | 4.97 грн |
| DAN217WMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA EMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 24280 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.96 грн |
| 35+ | 9.38 грн |
| 100+ | 6.54 грн |
| 500+ | 5.31 грн |
| 1000+ | 4.97 грн |
| DAP202UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 2838 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.03 грн |
| 19+ | 17.47 грн |
| 100+ | 8.51 грн |
| 500+ | 6.66 грн |
| 1000+ | 4.63 грн |
| DTA013ZEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.15W SC89
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 0.15W SC89
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.83 грн |
| 19+ | 17.14 грн |
| 100+ | 9.11 грн |
| 500+ | 5.62 грн |
| 1000+ | 3.82 грн |
| DTA013ZUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.2W SC85
Description: TRANS PREBIAS PNP 0.2W SC85
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTA024XUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.2W UMT3F
Description: TRANS PREBIAS PNP 0.2W UMT3F
на замовлення 2446 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTA125TKAT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 200 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 200 kOhms
на замовлення 2971 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.15 грн |
| 24+ | 13.50 грн |
| 100+ | 6.60 грн |
| 500+ | 5.17 грн |
| 1000+ | 3.59 грн |
| DTC013ZEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 8743 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.96 грн |
| 35+ | 9.30 грн |
| 100+ | 5.74 грн |
| 500+ | 3.94 грн |
| 1000+ | 3.47 грн |
| DTC013ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
Description: TRANS PREBIAS NPN 0.15W VMT3
на замовлення 25 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTC013ZUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 8784 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.64 грн |
| 32+ | 10.43 грн |
| 100+ | 6.45 грн |
| 500+ | 4.44 грн |
| 1000+ | 3.91 грн |
| DTC024XMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
Description: TRANS PREBIAS NPN 0.15W VMT3
на замовлення 7035 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTC024XUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.2W UMT3F
Description: TRANS PREBIAS NPN 0.2W UMT3F
на замовлення 2044 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EDZVFHT2R12B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 12V 150MW EMD2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 12V 150MW EMD2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21413 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.31 грн |
| 28+ | 11.64 грн |
| 100+ | 3.98 грн |
| 500+ | 3.67 грн |
| 1000+ | 3.02 грн |
| 2000+ | 2.75 грн |
| EMB51T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.63 грн |
| 12+ | 27.74 грн |
| 100+ | 15.73 грн |
| 500+ | 9.78 грн |
| 1000+ | 7.50 грн |
| 2000+ | 6.52 грн |
| EMB61T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EMB75T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 14+ | 23.61 грн |
| 100+ | 11.93 грн |
| 500+ | 9.13 грн |
| 1000+ | 6.77 грн |
| 2000+ | 5.70 грн |
| EMD53T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 14+ | 23.61 грн |
| 100+ | 11.93 грн |
| 500+ | 9.13 грн |
| 1000+ | 6.77 грн |
| 2000+ | 5.70 грн |
| EMD59T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 14+ | 23.61 грн |
| 100+ | 11.93 грн |
| 500+ | 9.13 грн |
| 1000+ | 6.77 грн |
| 2000+ | 5.70 грн |
| EMD62T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
на замовлення 5892 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.71 грн |
| 20+ | 16.74 грн |
| 100+ | 10.55 грн |
| 500+ | 7.36 грн |
| 1000+ | 6.54 грн |
| 2000+ | 5.84 грн |
| EMH59T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EMH60T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 47960 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 14+ | 23.61 грн |
| 100+ | 11.93 грн |
| 500+ | 9.13 грн |
| 1000+ | 6.77 грн |
| 2000+ | 5.70 грн |
| EMH61T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 334 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.91 грн |
| 15+ | 22.48 грн |
| 100+ | 12.72 грн |
| EMH75T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EMT51T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 20V 0.2A 6EMT
Description: TRANS 2PNP 20V 0.2A 6EMT
на замовлення 5813 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.91 грн |
| 15+ | 22.48 грн |
| 100+ | 12.72 грн |
| 500+ | 7.91 грн |
| 1000+ | 6.06 грн |
| 2000+ | 5.27 грн |
| EMX52T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.1A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: EMT6
Part Status: Active
Description: TRANS 2NPN 50V 0.1A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: EMT6
Part Status: Active
на замовлення 12985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 14+ | 23.86 грн |
| 100+ | 12.04 грн |
| 500+ | 9.21 грн |
| 1000+ | 6.84 грн |
| 2000+ | 5.75 грн |
| EMZ51T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 400MHz, 350MHz
Supplier Device Package: EMT6
Description: TRANS NPN/PNP 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 400MHz, 350MHz
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 14+ | 23.61 грн |
| 100+ | 11.93 грн |
| 500+ | 9.13 грн |
| 1000+ | 6.77 грн |
| 2000+ | 5.70 грн |
| LM4559FVT-GE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
товару немає в наявності
В кошику
од. на суму грн.
| LM4565FVM-GTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
на замовлення 2578 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.35 грн |
| 11+ | 31.05 грн |
| 25+ | 27.85 грн |
| 100+ | 22.81 грн |
| 250+ | 21.23 грн |
| 500+ | 20.27 грн |
| 1000+ | 19.17 грн |
| LMR341G-GTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 6SSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 80µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 6-SSOP
Number of Circuits: 1
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 1 CIRCUIT 6SSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 80µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 6-SSOP
Number of Circuits: 1
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.11 грн |
| 14+ | 24.75 грн |
| 25+ | 22.09 грн |
| 100+ | 18.02 грн |
| 250+ | 16.73 грн |
| 500+ | 15.95 грн |
| 1000+ | 15.05 грн |
| LMR342F-GE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC CMOS 2 CIRCUIT 8SOP
Description: IC CMOS 2 CIRCUIT 8SOP
на замовлення 851 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.30 грн |
| 10+ | 52.40 грн |
| 25+ | 49.20 грн |
| 100+ | 37.69 грн |
| 250+ | 35.01 грн |
| 500+ | 29.79 грн |
| LMR342FVM-GTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC OP AMP GROUND SENSE 8MSOP
Description: IC OP AMP GROUND SENSE 8MSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LMR342FVT-GE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.07 грн |
| 10+ | 43.67 грн |
| LMR344FJ-GE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14SOPJ
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOPJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 4 CIRCUIT 14SOPJ
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOPJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.53 грн |
| 10+ | 96.88 грн |
| 25+ | 92.00 грн |
| 100+ | 70.91 грн |
| 250+ | 66.28 грн |
| 500+ | 58.57 грн |
| 1000+ | 45.48 грн |
| LMR344FVJ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
В кошику
од. на суму грн.
| LMR822F-GE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.35 грн |
| 11+ | 30.73 грн |
| 25+ | 27.56 грн |
| 100+ | 22.56 грн |
| 250+ | 20.99 грн |
| 500+ | 20.04 грн |
| 1000+ | 18.94 грн |
| LMR822FJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT SOP8J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 2 CIRCUIT SOP8J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.34 грн |
| 10+ | 50.62 грн |
| 25+ | 42.08 грн |
| 100+ | 30.36 грн |
| 250+ | 25.86 грн |
| 500+ | 23.10 грн |
| 1000+ | 20.45 грн |
| LMR822FV-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8SSOP
Description: IC OP AMP FULL SWING 8SSOP
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LMR824F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.13mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.13mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
В кошику
од. на суму грн.
| LMR824FJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING SOP14J
Description: IC OP AMP FULL SWING SOP14J
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LMR824FVJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 14TSSOP
Description: IC OP AMP FULL SWING 14TSSOP
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LMR932FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8TSSOP
Description: IC OP AMP FULL SWING 8TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LMR932FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 140µA
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 5 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 140µA
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 5 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
на замовлення 6012 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.98 грн |
| 10+ | 53.29 грн |
| 25+ | 50.07 грн |
| 100+ | 38.34 грн |
| 250+ | 35.61 грн |
| 500+ | 30.31 грн |
| 1000+ | 23.85 грн |
| QH8MA3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.86 грн |
| 10+ | 54.34 грн |
| 100+ | 34.14 грн |
| 500+ | 25.99 грн |
| 1000+ | 22.66 грн |
| QS5W1TR |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 30V 3A TSMT5
Description: TRANS 2NPN 30V 3A TSMT5
на замовлення 49 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.23 грн |
| 10+ | 43.26 грн |
| QS5W2TR |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 3A TSMT5
Description: TRANS 2NPN 50V 3A TSMT5
на замовлення 268 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.23 грн |
| 10+ | 41.89 грн |
| 100+ | 31.33 грн |
| QS5Y1TR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 3A TSMT5
Description: TRANS NPN/PNP 30V 3A TSMT5
на замовлення 2595 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.10 грн |
| 10+ | 48.12 грн |
| 100+ | 36.92 грн |
| 500+ | 27.39 грн |
| 1000+ | 21.91 грн |
| QS6Z5TR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
на замовлення 3683 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.70 грн |
| 10+ | 58.14 грн |
| 100+ | 40.27 грн |
| 500+ | 31.58 грн |
| 1000+ | 26.88 грн |
| QS8K13TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 2852 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.88 грн |
| 10+ | 83.94 грн |
| 100+ | 56.55 грн |
| 500+ | 42.04 грн |
| 1000+ | 38.91 грн |
| RB050L-40DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1406 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.26 грн |
| 10+ | 45.53 грн |
| 100+ | 30.40 грн |
| 500+ | 22.05 грн |
| RB050L-60DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3277 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.75 грн |
| 10+ | 44.96 грн |
| 100+ | 31.11 грн |
| 500+ | 24.39 грн |
| RB055L-30DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
на замовлення 293 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 55.43 грн |
| 10+ | 34.13 грн |
| 100+ | 24.48 грн |
| RB055L-60DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
на замовлення 2730 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.10 грн |
| 10+ | 35.66 грн |
| 100+ | 25.09 грн |
| 500+ | 18.02 грн |
| RB058L150TE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Qualification: AEC-Q101
на замовлення 1035 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.55 грн |
| 11+ | 29.60 грн |
| 100+ | 19.01 грн |
| 500+ | 13.52 грн |
| RB058L-40DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 439 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.06 грн |
| 10+ | 43.67 грн |
| 100+ | 28.54 грн |
| RB058L-60DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4304 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.51 грн |
| 10+ | 37.44 грн |
| 100+ | 25.92 грн |
| 500+ | 20.32 грн |
| RB060L-40DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1267 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.87 грн |
| 10+ | 33.48 грн |
| 100+ | 26.38 грн |
| 500+ | 19.04 грн |
| RB060M-40DDTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDU
Description: DIODE SCHOTTKY 40V 2A PMDU
товару немає в наявності
В кошику
од. на суму грн.
| RB060M-60DDTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDU
Description: DIODE SCHOTTKY 60V 2A PMDU
товару немає в наявності
В кошику
од. на суму грн.
| RB068L100DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3737 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.06 грн |
| 10+ | 46.18 грн |
| 100+ | 34.91 грн |
| 500+ | 25.45 грн |
| RB068L150TE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDS
Description: DIODE SCHOTTKY 150V 2A PMDS
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.




































