Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103507) > Сторінка 757 з 1726
| Фото | Назва | Виробник | Інформація |
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RB520CS-30T2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MAVMN2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB521AS-30T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 200MA VML2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB521AS-40T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA VML2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB521CS-30T2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MA VMN2Current - Reverse Leakage @ Vr: 10 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: VMN2 (SOD-923) Current - Average Rectified (Io): 100mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB530CM-60T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 100MAVMN2MPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2M (SOD-923) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA Current - Reverse Leakage @ Vr: 1 µA @ 60 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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RB530VM-30TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MA UMD2Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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RB531VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 100MA UMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB550VAM-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2MCurrent - Reverse Leakage @ Vr: 30 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB578VAM100TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 700MA TUMD2MCurrent - Reverse Leakage @ Vr: 200 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 700mA Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 26300 шт: термін постачання 21-31 дні (днів) |
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RB886CST2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 15V 10MA VMN2Current - Max: 10 mA Part Status: Not For New Designs Supplier Device Package: VMN2 (SOD-923) Voltage - Peak Reverse (Max): 5V Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: Schottky - Single Package / Case: 2-SMD, Flat Lead Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RBE05SM20AT2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 500MA EMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RBE07V20ATE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 700MA UMD2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RF01VM2STE-17 | Rohm Semiconductor |
Description: DIODE GEN PURP 250V 100MA UMD2Current - Reverse Leakage @ Vr: 10 µA @ 250 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 250 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: UMD2 Current - Average Rectified (Io): 100mA Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Packaging: Tape & Reel (TR) |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RF101L2SDDTE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 1A PMDSCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PMDS Current - Average Rectified (Io): 1A Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RF4E075ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 7.5A HUML2020L8Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RFN3BM2SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A TO252Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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RFN6BM2DTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 3A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RFU02VSM6STR | Rohm Semiconductor |
Description: DIODE GP 600V 200MA TUMD2SMCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2SM Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RFUH10NS4STL | Rohm Semiconductor |
Description: DIODE GEN PURP 430V 10A LPDS |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RN242CST2RA | Rohm Semiconductor |
Description: DIODE PIN HF SW 30V 100MA VMN2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RQ3E180AJTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 18A/30A 8HSMTPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 11mA Supplier Device Package: 8-HSMT (3.2x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RQ5E040AJTCL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ6E030ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 3A TSMT6Drain to Source Voltage (Vdss): 30 V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RQ6E055BNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 5.5A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RR2L4SDDTE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 2A PMDS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RR2L6SDDTE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 2A PMDS |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RRE02VS4SGTR | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 200MA TUMD2S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RRE02VSM4STR | Rohm Semiconductor |
Description: DIODE GP 400V 200MA TUMD2SMCurrent - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2SM Current - Average Rectified (Io): 200mA Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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RRE07VSM4STR | Rohm Semiconductor |
Description: DIODE GP 400V 700MA TUMD2SM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RS1E350BNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 35A 8HSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSA30LDDTE25 | Rohm Semiconductor |
Description: TVS DIODE 25.6VWM 41.4VC PMDSType: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 41.4V Voltage - Breakdown (Min): 28.5V Unidirectional Channels: 1 Supplier Device Package: PMDS Voltage - Reverse Standoff (Typ): 25.6V Qualification: AEC-Q101 Grade: Automotive Current - Peak Pulse (10/1000µs): 14.4A (8/20µs) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSB6.8SMT2N | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM EMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSX201VAM30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2MCurrent - Reverse Leakage @ Vr: 300 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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RUS100N02TB | Rohm Semiconductor |
Description: MOSFET N-CH 20V 10A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BH7649KS2 | Rohm Semiconductor |
Description: IC VIDEO SIGNAL SWITCHER 52SQFP Control Interface: I2C Part Status: Active Supplier Device Package: SQFP-T52M (10x10) Applications: Consumer Video Voltage - Supply: 7.5V ~ 9.5V Function: Switch Mounting Type: Surface Mount Package / Case: 52-LQFP Packaging: Tray |
на замовлення 994 шт: термін постачання 21-31 дні (днів) |
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BP5728 | Rohm Semiconductor |
Description: IC AC/DC CONVERTER ISO 6SIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BU7988KVT | Rohm Semiconductor |
Description: IC DESERIALIZER LVDS 100TQFPPart Status: Active Supplier Device Package: 100-TQFP (14x14) Voltage - Supply: 3V ~ 3.6V Operating Temperature: -20°C ~ 85°C (TA) Function: Serializer/Deserializer Number of Outputs: 56 Mounting Type: Surface Mount Output Type: LVCMOS Package / Case: 100-TQFP Packaging: Tray Number of Inputs: 8 Input Type: LVDS |
на замовлення 286 шт: термін постачання 21-31 дні (днів) |
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BU9408KS2 | Rohm Semiconductor |
Description: IC DSP 32BIT AUDIO 52SQFPSupplier Device Package: SQFP-T52M (10x10) Clock Rate: 24.576MHz Voltage - Core: 3.30V Voltage - I/O: 3.30V On-Chip RAM: 1.375KB Operating Temperature: -25°C ~ 85°C (TA) Type: Audio Interface: I2C, I2S, SPDIF Mounting Type: Surface Mount Package / Case: 52-LQFP Packaging: Tray |
на замовлення 987 шт: термін постачання 21-31 дні (днів) |
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BD9428 | Rohm Semiconductor |
Description: IC LED DRV RGLTR PWM 250MA 16DIPInternal Switch(s): Yes Current - Output / Channel: 250mA Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) Type: DC DC Regulator Frequency: 150kHz Number of Outputs: 4 Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tube Voltage - Supply (Max): 35V Voltage - Supply (Min): 9V Dimming: PWM Supplier Device Package: 16-DIP Topology: Step-Up (Boost) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BD95820N-LB | Rohm Semiconductor | Description: IC EARTH LEAKAGE DETECTOR 8SIP |
на замовлення 335 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BM63363S-VA | Rohm Semiconductor |
Description: IC IPM 600V IGBT SW 25HSDIPVoltage: 600 V Current: 10 A Voltage - Isolation: 1500Vrms Configuration: 3 Phase Inverter Type: IGBT Mounting Type: Through Hole Package / Case: 25-PowerDIP Module (1.134", 28.80mm) Packaging: Tube |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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BM63363S-VC | Rohm Semiconductor |
Description: IC IPM 600V IGBT SW 25HSDIPVoltage: 600 V Current: 10 A Voltage - Isolation: 1500Vrms Configuration: 3 Phase Inverter Type: IGBT Mounting Type: Through Hole Package / Case: 25-PowerDIP Module (1.327", 33.70mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BM63364S-VA | Rohm Semiconductor |
Description: IC IPM 600V IGBT SW 25HSDIPVoltage: 600 V Current: 15 A Voltage - Isolation: 1500Vrms Configuration: 3 Phase Inverter Type: IGBT Mounting Type: Through Hole Package / Case: 25-PowerDIP Module (1.134", 28.80mm) Packaging: Tube |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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BM63364S-VC | Rohm Semiconductor |
Description: IC IPM 600V IGBT SW 25HSDIPConfiguration: 3 Phase Inverter Type: IGBT Mounting Type: Through Hole Package / Case: 25-PowerDIP Module (1.327", 33.70mm) Packaging: Tube Voltage: 600 V Current: 15 A Voltage - Isolation: 1500Vrms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BM63763S-VA | Rohm Semiconductor |
Description: IC IPM 600V IGBT SW 25HSDIPVoltage: 600 V Current: 10 A Voltage - Isolation: 1500Vrms Configuration: 3 Phase Inverter Type: IGBT Mounting Type: Through Hole Package / Case: 25-PowerDIP Module (1.134", 28.80mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BM63763S-VC | Rohm Semiconductor |
Description: IC IPM 600V IGBT SW 25HSDIPMounting Type: Through Hole Package / Case: 25-PowerDIP Module (1.327", 33.70mm) Packaging: Tube Voltage: 600 V Current: 10 A Voltage - Isolation: 1500Vrms Configuration: 3 Phase Inverter Type: IGBT |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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BM63764S-VA | Rohm Semiconductor |
Description: IC IPM 600V IGBT SW 25HSDIPVoltage: 600 V Current: 15 A Voltage - Isolation: 1500Vrms Configuration: 3 Phase Inverter Type: IGBT Mounting Type: Through Hole Package / Case: 25-PowerDIP Module (1.134", 28.80mm) Packaging: Tube |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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BM63764S-VC | Rohm Semiconductor |
Description: IC IPM 600V IGBT SW 25HSDIPVoltage: 600 V Current: 15 A Voltage - Isolation: 1500Vrms Configuration: 3 Phase Inverter Type: IGBT Mounting Type: Through Hole Package / Case: 25-PowerDIP Module (1.327", 33.70mm) Packaging: Tube |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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BR24G01-3 | Rohm Semiconductor |
Description: IC EEPROM 1K I2C BUS DIP-T8 |
на замовлення 1864 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
BR24G01-3A | Rohm Semiconductor |
Description: IC EEPROM 1K I2C BUS DIP-T8 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
BR24G02-3 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8DIPDigiKey Programmable: Not Verified Memory Organization: 256 x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-DIP-T Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 2Kbit Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BR24G02-3A | Rohm Semiconductor |
Description: IC EEPROM 2K I2C BUS DIP-T8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BR24G04-3 | Rohm Semiconductor |
Description: IC EEPROM 4K I2C BUS DIP-T8 |
на замовлення 1980 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
BR24G08-3A | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 1MHZ 8DIPDigiKey Programmable: Not Verified Memory Organization: 1K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-DIP-T Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 8Kbit Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BR24G128-3 | Rohm Semiconductor |
Description: IC EEPROM 128K I2C BUS DIP-T8 |
на замовлення 1986 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
BR24G16-3 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 400KHZ 8DIPDigiKey Programmable: Not Verified Memory Organization: 2K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-DIP-T Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BR24G1M-3A | Rohm Semiconductor |
Description: IC EEPROM 1024K I2C BUS DIP-T8 |
на замовлення 1985 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
BR24G256-3 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT I2C 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-DIP-T Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BR24G256-3A | Rohm Semiconductor |
Description: IC EEPROM 256KBIT I2C 1MHZ 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP-T Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BR24G32-3 | Rohm Semiconductor |
Description: IC EEPROM 32K I2C 400KHZ 8DIP |
товару немає в наявності |
В кошику од. на суму грн. |
| RB520CS-30T2RA |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RB521AS-30T2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA VML2
Description: DIODE SCHOTTKY 30V 200MA VML2
товару немає в наявності
В кошику
од. на суму грн.
| RB521AS-40T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA VML2
Description: DIODE SCHOTTKY 40V 200MA VML2
товару немає в наявності
В кошику
од. на суму грн.
| RB521CS-30T2RA |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMN2
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 100MA VMN2
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RB530CM-60T2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 3.19 грн |
| 16000+ | 2.78 грн |
| 24000+ | 2.63 грн |
| RB530VM-30TE-17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.85 грн |
| 6000+ | 2.65 грн |
| 9000+ | 2.55 грн |
| 15000+ | 2.39 грн |
| 21000+ | 2.22 грн |
| RB531VM-40TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
Description: DIODE SCHOTTKY 40V 100MA UMD2
товару немає в наявності
В кошику
од. на суму грн.
| RB550VAM-30TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.24 грн |
| RB578VAM100TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 700MA TUMD2M
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 700mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 700MA TUMD2M
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 700mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 26300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.75 грн |
| 6000+ | 5.20 грн |
| 9000+ | 5.08 грн |
| 15000+ | 4.75 грн |
| 21000+ | 4.53 грн |
| RB886CST2RA |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 15V 10MA VMN2
Current - Max: 10 mA
Part Status: Not For New Designs
Supplier Device Package: VMN2 (SOD-923)
Voltage - Peak Reverse (Max): 5V
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 15V 10MA VMN2
Current - Max: 10 mA
Part Status: Not For New Designs
Supplier Device Package: VMN2 (SOD-923)
Voltage - Peak Reverse (Max): 5V
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 7.60 грн |
| RBE05SM20AT2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA EMD2
Description: DIODE SCHOTTKY 20V 500MA EMD2
товару немає в наявності
В кошику
од. на суму грн.
| RBE07V20ATE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 700MA UMD2
Description: DIODE SCHOTTKY 20V 700MA UMD2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RF01VM2STE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 250V 100MA UMD2
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 100mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 250V 100MA UMD2
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 100mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RF101L2SDDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 1A PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RF4E075ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 18.08 грн |
| RFN3BM2SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 39.88 грн |
| RFN6BM2DTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 3A TO252
Description: DIODE ARRAY GP 200V 3A TO252
товару немає в наявності
В кошику
од. на суму грн.
| RFU02VSM6STR |
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Виробник: Rohm Semiconductor
Description: DIODE GP 600V 200MA TUMD2SM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2SM
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE GP 600V 200MA TUMD2SM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2SM
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.55 грн |
| 6000+ | 5.71 грн |
| 9000+ | 5.40 грн |
| RFUH10NS4STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 430V 10A LPDS
Description: DIODE GEN PURP 430V 10A LPDS
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN242CST2RA |
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Виробник: Rohm Semiconductor
Description: DIODE PIN HF SW 30V 100MA VMN2
Description: DIODE PIN HF SW 30V 100MA VMN2
товару немає в наявності
В кошику
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| RQ3E180AJTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 32.81 грн |
| 6000+ | 29.42 грн |
| RQ5E040AJTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.68 грн |
| RQ6E030ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT6
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Description: MOSFET P-CH 30V 3A TSMT6
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
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| RQ6E055BNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 5.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 5.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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| RR2L4SDDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 2A PMDS
Description: DIODE GEN PURP 400V 2A PMDS
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| RR2L6SDDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 2A PMDS
Description: DIODE GEN PURP 600V 2A PMDS
на замовлення 1500 шт:
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| RRE02VS4SGTR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 200MA TUMD2S
Description: DIODE GEN PURP 400V 200MA TUMD2S
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| RRE02VSM4STR |
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Виробник: Rohm Semiconductor
Description: DIODE GP 400V 200MA TUMD2SM
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2SM
Current - Average Rectified (Io): 200mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE GP 400V 200MA TUMD2SM
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2SM
Current - Average Rectified (Io): 200mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.20 грн |
| 6000+ | 5.40 грн |
| 9000+ | 5.10 грн |
| 15000+ | 4.48 грн |
| RRE07VSM4STR |
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Виробник: Rohm Semiconductor
Description: DIODE GP 400V 700MA TUMD2SM
Description: DIODE GP 400V 700MA TUMD2SM
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| RS1E350BNTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A 8HSOP
Description: MOSFET N-CH 30V 35A 8HSOP
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| RSA30LDDTE25 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: PMDS
Voltage - Reverse Standoff (Typ): 25.6V
Qualification: AEC-Q101
Grade: Automotive
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Unidirectional Channels: 1
Supplier Device Package: PMDS
Voltage - Reverse Standoff (Typ): 25.6V
Qualification: AEC-Q101
Grade: Automotive
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
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| RSB6.8SMT2N |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD2
Description: TVS DIODE 3.5VWM EMD2
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| RSX201VAM30TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.68 грн |
| 6000+ | 4.07 грн |
| 9000+ | 3.85 грн |
| 15000+ | 3.38 грн |
| 21000+ | 3.24 грн |
| 30000+ | 3.14 грн |
| RUS100N02TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
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| BH7649KS2 |
Виробник: Rohm Semiconductor
Description: IC VIDEO SIGNAL SWITCHER 52SQFP
Control Interface: I2C
Part Status: Active
Supplier Device Package: SQFP-T52M (10x10)
Applications: Consumer Video
Voltage - Supply: 7.5V ~ 9.5V
Function: Switch
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
Description: IC VIDEO SIGNAL SWITCHER 52SQFP
Control Interface: I2C
Part Status: Active
Supplier Device Package: SQFP-T52M (10x10)
Applications: Consumer Video
Voltage - Supply: 7.5V ~ 9.5V
Function: Switch
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
на замовлення 994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 418.53 грн |
| 10+ | 361.88 грн |
| 25+ | 342.14 грн |
| 80+ | 278.28 грн |
| 230+ | 264.01 грн |
| 440+ | 236.90 грн |
| BP5728 |
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Виробник: Rohm Semiconductor
Description: IC AC/DC CONVERTER ISO 6SIP
Description: IC AC/DC CONVERTER ISO 6SIP
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| BU7988KVT |
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Виробник: Rohm Semiconductor
Description: IC DESERIALIZER LVDS 100TQFP
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -20°C ~ 85°C (TA)
Function: Serializer/Deserializer
Number of Outputs: 56
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 100-TQFP
Packaging: Tray
Number of Inputs: 8
Input Type: LVDS
Description: IC DESERIALIZER LVDS 100TQFP
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -20°C ~ 85°C (TA)
Function: Serializer/Deserializer
Number of Outputs: 56
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 100-TQFP
Packaging: Tray
Number of Inputs: 8
Input Type: LVDS
на замовлення 286 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 597.33 грн |
| 10+ | 519.06 грн |
| 25+ | 494.97 грн |
| 80+ | 403.33 грн |
| 230+ | 385.20 грн |
| BU9408KS2 |
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Виробник: Rohm Semiconductor
Description: IC DSP 32BIT AUDIO 52SQFP
Supplier Device Package: SQFP-T52M (10x10)
Clock Rate: 24.576MHz
Voltage - Core: 3.30V
Voltage - I/O: 3.30V
On-Chip RAM: 1.375KB
Operating Temperature: -25°C ~ 85°C (TA)
Type: Audio
Interface: I2C, I2S, SPDIF
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
Description: IC DSP 32BIT AUDIO 52SQFP
Supplier Device Package: SQFP-T52M (10x10)
Clock Rate: 24.576MHz
Voltage - Core: 3.30V
Voltage - I/O: 3.30V
On-Chip RAM: 1.375KB
Operating Temperature: -25°C ~ 85°C (TA)
Type: Audio
Interface: I2C, I2S, SPDIF
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
на замовлення 987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 465.20 грн |
| 10+ | 402.49 грн |
| 25+ | 380.47 грн |
| 80+ | 309.47 грн |
| 230+ | 293.60 грн |
| 440+ | 263.44 грн |
| BD9428 |
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Виробник: Rohm Semiconductor
Description: IC LED DRV RGLTR PWM 250MA 16DIP
Internal Switch(s): Yes
Current - Output / Channel: 250mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 150kHz
Number of Outputs: 4
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Supply (Max): 35V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 16-DIP
Topology: Step-Up (Boost)
Description: IC LED DRV RGLTR PWM 250MA 16DIP
Internal Switch(s): Yes
Current - Output / Channel: 250mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 150kHz
Number of Outputs: 4
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Supply (Max): 35V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 16-DIP
Topology: Step-Up (Boost)
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| BD95820N-LB |
Виробник: Rohm Semiconductor
Description: IC EARTH LEAKAGE DETECTOR 8SIP
Description: IC EARTH LEAKAGE DETECTOR 8SIP
на замовлення 335 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BM63363S-VA |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
на замовлення 35 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1294.34 грн |
| 10+ | 1097.84 грн |
| BM63363S-VC |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Packaging: Tube
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Packaging: Tube
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| BM63364S-VA |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
на замовлення 33 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1495.30 грн |
| 10+ | 1268.12 грн |
| BM63364S-VC |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Packaging: Tube
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 1500Vrms
Description: IC IPM 600V IGBT SW 25HSDIP
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Packaging: Tube
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 1500Vrms
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| BM63763S-VA |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BM63763S-VC |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Packaging: Tube
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Description: IC IPM 600V IGBT SW 25HSDIP
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Packaging: Tube
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
на замовлення 31 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1435.17 грн |
| 10+ | 1217.83 грн |
| BM63764S-VA |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1655.11 грн |
| 60+ | 1321.04 грн |
| BM63764S-VC |
![]() |
Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Packaging: Tube
Description: IC IPM 600V IGBT SW 25HSDIP
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Packaging: Tube
на замовлення 23 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1741.35 грн |
| BR24G01-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1K I2C BUS DIP-T8
Description: IC EEPROM 1K I2C BUS DIP-T8
на замовлення 1864 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BR24G01-3A |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 1K I2C BUS DIP-T8
Description: IC EEPROM 1K I2C BUS DIP-T8
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BR24G02-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8DIP
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-DIP-T
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC EEPROM 2KBIT I2C 400KHZ 8DIP
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-DIP-T
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BR24G02-3A |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 2K I2C BUS DIP-T8
Description: IC EEPROM 2K I2C BUS DIP-T8
товару немає в наявності
В кошику
од. на суму грн.
| BR24G04-3 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 4K I2C BUS DIP-T8
Description: IC EEPROM 4K I2C BUS DIP-T8
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BR24G08-3A |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 1MHZ 8DIP
DigiKey Programmable: Not Verified
Memory Organization: 1K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-DIP-T
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC EEPROM 8KBIT I2C 1MHZ 8DIP
DigiKey Programmable: Not Verified
Memory Organization: 1K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-DIP-T
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BR24G128-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128K I2C BUS DIP-T8
Description: IC EEPROM 128K I2C BUS DIP-T8
на замовлення 1986 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BR24G16-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 400KHZ 8DIP
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-DIP-T
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC EEPROM 16KBIT I2C 400KHZ 8DIP
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-DIP-T
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BR24G1M-3A |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 1024K I2C BUS DIP-T8
Description: IC EEPROM 1024K I2C BUS DIP-T8
на замовлення 1985 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BR24G256-3 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT I2C 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BR24G256-3A |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 1MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT I2C 1MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BR24G32-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32K I2C 400KHZ 8DIP
Description: IC EEPROM 32K I2C 400KHZ 8DIP
товару немає в наявності
В кошику
од. на суму грн.






































