Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102215) > Сторінка 754 з 1704
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RB068L-40TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDS |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RB078BM30STL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 5A TO252 |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RB085BM-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB085BM-60TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
на замовлення 1909 шт: термін постачання 21-31 дні (днів) |
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RB085BM-90TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
на замовлення 1580 шт: термін постачання 21-31 дні (днів) |
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RB095BM-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 3A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB095BM-90TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 3A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB160MM-90TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 90V 1A PMDUPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
на замовлення 29991 шт: термін постачання 21-31 дні (днів) |
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RB162MM-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A PMDUPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 20806 шт: термін постачання 21-31 дні (днів) |
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RB168L150TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 1A PMDS |
на замовлення 1103 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RB168L-40TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 1A PMDS |
на замовлення 3713 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RB168M150TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 1A PMDU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB168MM-40TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 1A PMDUPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A Current - Reverse Leakage @ Vr: 550 nA @ 40 V |
на замовлення 92010 шт: термін постачання 21-31 дні (днів) |
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RB228NS100TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 100V 15A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 707 шт: термін постачання 21-31 дні (днів) |
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RB425DFHT146 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 50MA SMD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50mA Supplier Device Package: SMD3 Operating Temperature - Junction: 125°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V Qualification: AEC-Q101 |
на замовлення 1738 шт: термін постачання 21-31 дні (днів) |
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RB520CM-60T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 100MAVMN2MPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2M (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 60 V |
на замовлення 37732 шт: термін постачання 21-31 дні (днів) |
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RB520CS-30T2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MAVMN2Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB521AS-30T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 200MA VML2 |
на замовлення 780 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RB521AS-40T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA VML2 |
на замовлення 7985 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RB521CS-30T2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MA VMN2Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 10 V |
на замовлення 10489 шт: термін постачання 21-31 дні (днів) |
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RB530CM-60T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 100MAVMN2MPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2M (SOD-923) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA Current - Reverse Leakage @ Vr: 1 µA @ 60 V |
на замовлення 25038 шт: термін постачання 21-31 дні (днів) |
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RB530VM-30TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MA UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
на замовлення 9317 шт: термін постачання 21-31 дні (днів) |
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RB531VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 100MA UMD2 |
на замовлення 98 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RB550VAM-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2MPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 4977 шт: термін постачання 21-31 дні (днів) |
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RB578VAM100TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 700MA TUMD2MPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 700mA Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA Current - Reverse Leakage @ Vr: 200 nA @ 100 V |
на замовлення 26501 шт: термін постачання 21-31 дні (днів) |
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RB886CST2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 15V 10MA VMN2Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Diode Type: Schottky - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz Voltage - Peak Reverse (Max): 5V Supplier Device Package: VMN2 (SOD-923) Part Status: Not For New Designs Current - Max: 10 mA |
на замовлення 12367 шт: термін постачання 21-31 дні (днів) |
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RBE05SM20AT2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 500MA EMD2 |
на замовлення 7369 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RBE07V20ATE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 700MA UMD2 |
на замовлення 5570 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RF01VM2STE-17 | Rohm Semiconductor |
Description: DIODE GEN PURP 250V 100MA UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 100mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 10 µA @ 250 V |
на замовлення 42825 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RF101L2SDDTE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 1A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1216 шт: термін постачання 21-31 дні (днів) |
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RF4E075ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 7.5A HUML2020L8Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
на замовлення 1894 шт: термін постачання 21-31 дні (днів) |
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RFN3BM2SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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RFN6BM2DTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 3A TO252 |
на замовлення 2467 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RFNL5BM6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252 |
на замовлення 1764 шт: термін постачання 21-31 дні (днів) |
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RFU02VSM6STR | Rohm Semiconductor |
Description: DIODE GP 600V 200MA TUMD2SMPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: TUMD2SM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 11575 шт: термін постачання 21-31 дні (днів) |
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RFUH10NS4STL | Rohm Semiconductor |
Description: DIODE GEN PURP 430V 10A LPDS |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RN242CST2RA | Rohm Semiconductor |
Description: DIODE PIN HF SW 30V 100MA VMN2 |
на замовлення 7950 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RQ3E180AJTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 18A/30A 8HSMTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 11mA Supplier Device Package: 8-HSMT (3.2x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V |
на замовлення 11637 шт: термін постачання 21-31 дні (днів) |
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RQ5E040AJTCL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V |
на замовлення 1702 шт: термін постачання 21-31 дні (днів) |
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RQ6E055BNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 5.5A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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RR2L4SDDTE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 2A PMDS |
на замовлення 2155 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RR2L6SDDTE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 2A PMDS |
на замовлення 2954 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RRE02VS4SGTR | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 200MA TUMD2S |
на замовлення 2955 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RRE02VSM4STR | Rohm Semiconductor |
Description: DIODE GP 400V 200MA TUMD2SMPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: TUMD2SM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 17167 шт: термін постачання 21-31 дні (днів) |
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RRE07VSM4STR | Rohm Semiconductor |
Description: DIODE GP 400V 700MA TUMD2SM |
на замовлення 2470 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RS1E350BNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 35A 8HSOP |
на замовлення 1593 шт: термін постачання 21-31 дні (днів) |
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RS3E075ATTB | Rohm Semiconductor |
Description: MOSFET P-CH 30V 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP-J Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V |
на замовлення 11173 шт: термін постачання 21-31 дні (днів) |
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RSA30LDDTE25 | Rohm Semiconductor |
Description: TVS DIODE 25.6VWM 41.4VC PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Current - Peak Pulse (10/1000µs): 14.4A (8/20µs) Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: PMDS Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSB6.8SMT2N | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM EMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSH070N05GZETB | Rohm Semiconductor |
Description: MOSFET N-CH 45V 7A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
на замовлення 2200 шт: термін постачання 21-31 дні (днів) |
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RSH070P05GZETB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 7A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RSX201VAM30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2MPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
на замовлення 46825 шт: термін постачання 21-31 дні (днів) |
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RUS100N02TB | Rohm Semiconductor |
Description: MOSFET N-CH 20V 10A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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BA12004BF-E2 | Rohm Semiconductor |
Description: TRANS 7NPN DARL 60V 0.5A 16SOP |
на замовлення 2344 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BA2904WF-E2 | Rohm Semiconductor |
Description: IC OP AMP GROUND SENSE SOP8 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BD48K38G-TL | Rohm Semiconductor |
Description: IC VOLTAGE SUPERVISOR 3SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BD49K26G-TL | Rohm Semiconductor |
Description: IC VOLTAGE DETECTOR SSOP3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BD49K44G-TL | Rohm Semiconductor |
Description: IC VOLTAGE DETECTOR SSOP3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BD65499MUV-E2 | Rohm Semiconductor |
Description: IC LENS DVR 1-2CH 28VQFN |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BD6962FVM-GTR | Rohm Semiconductor |
Description: IC MOTOR DRIVER PWM 8-MSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| RB068L-40TE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Description: DIODE SCHOTTKY 40V 2A PMDS
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB078BM30STL |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252
Description: DIODE SCHOTTKY 30V 5A TO252
на замовлення 6 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB085BM-30TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| RB085BM-60TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
на замовлення 1909 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 200.71 грн |
| 10+ | 124.78 грн |
| 100+ | 85.61 грн |
| 500+ | 64.60 грн |
| 1000+ | 59.53 грн |
| RB085BM-90TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARRAY SCHOTT 90V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
на замовлення 1580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 200.71 грн |
| 10+ | 124.62 грн |
| 100+ | 85.51 грн |
| 500+ | 64.51 грн |
| 1000+ | 59.45 грн |
| RB095BM-30TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| RB095BM-90TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARRAY SCHOTT 90V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
товару немає в наявності
В кошику
од. на суму грн.
| RB160MM-90TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 90V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
на замовлення 29991 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.39 грн |
| 17+ | 19.17 грн |
| 100+ | 13.69 грн |
| 500+ | 9.64 грн |
| 1000+ | 8.60 грн |
| RB162MM-30TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 20806 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.31 грн |
| 11+ | 31.30 грн |
| 100+ | 21.32 грн |
| 500+ | 15.01 грн |
| 1000+ | 11.26 грн |
| RB168L150TE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDS
Description: DIODE SCHOTTKY 150V 1A PMDS
на замовлення 1103 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB168L-40TE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDS
Description: DIODE SCHOTTKY 40V 1A PMDS
на замовлення 3713 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB168M150TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
Description: DIODE SCHOTTKY 150V 1A PMDU
товару немає в наявності
В кошику
од. на суму грн.
| RB168MM-40TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Description: DIODE SCHOTTKY 40V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
на замовлення 92010 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.55 грн |
| 10+ | 32.43 грн |
| 100+ | 23.02 грн |
| 500+ | 16.45 грн |
| 1000+ | 14.79 грн |
| RB228NS100TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 100V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 100V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
на замовлення 707 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.64 грн |
| 10+ | 109.58 грн |
| 100+ | 87.09 грн |
| 500+ | 67.03 грн |
| RB425DFHT146 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 50MA SMD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 40V 50MA SMD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
на замовлення 1738 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 55.43 грн |
| 10+ | 32.83 грн |
| 100+ | 22.39 грн |
| 500+ | 15.99 грн |
| 1000+ | 14.37 грн |
| RB520CM-60T2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
на замовлення 37732 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.64 грн |
| 31+ | 10.51 грн |
| 100+ | 6.56 грн |
| 500+ | 4.52 грн |
| 1000+ | 3.88 грн |
| 2000+ | 3.45 грн |
| RB520CS-30T2RA |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RB521AS-30T2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA VML2
Description: DIODE SCHOTTKY 30V 200MA VML2
на замовлення 780 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB521AS-40T2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA VML2
Description: DIODE SCHOTTKY 40V 200MA VML2
на замовлення 7985 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB521CS-30T2RA |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
на замовлення 10489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.79 грн |
| 15+ | 22.16 грн |
| 100+ | 14.05 грн |
| 500+ | 9.87 грн |
| 1000+ | 8.80 грн |
| 2000+ | 7.90 грн |
| RB530CM-60T2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
на замовлення 25038 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.64 грн |
| 32+ | 10.11 грн |
| 100+ | 6.65 грн |
| 500+ | 4.58 грн |
| 1000+ | 3.22 грн |
| 2000+ | 2.91 грн |
| RB530VM-30TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
на замовлення 9317 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.64 грн |
| 31+ | 10.51 грн |
| 100+ | 7.07 грн |
| 500+ | 4.87 грн |
| 1000+ | 4.31 грн |
| RB531VM-40TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
Description: DIODE SCHOTTKY 40V 100MA UMD2
на замовлення 98 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB550VAM-30TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 4977 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 16+ | 20.86 грн |
| 100+ | 13.18 грн |
| 500+ | 9.24 грн |
| 1000+ | 8.23 грн |
| RB578VAM100TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 700MA TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
Description: DIODE SCHOTTKY 100V 700MA TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
на замовлення 26501 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.59 грн |
| 17+ | 19.89 грн |
| 100+ | 12.15 грн |
| 500+ | 8.96 грн |
| 1000+ | 7.98 грн |
| RB886CST2RA |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 15V 10MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: VMN2 (SOD-923)
Part Status: Not For New Designs
Current - Max: 10 mA
Description: DIODE SCHOTTKY 15V 10MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: VMN2 (SOD-923)
Part Status: Not For New Designs
Current - Max: 10 mA
на замовлення 12367 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.07 грн |
| 14+ | 23.37 грн |
| 100+ | 13.98 грн |
| 500+ | 12.15 грн |
| 1000+ | 8.26 грн |
| 2000+ | 7.61 грн |
| RBE05SM20AT2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA EMD2
Description: DIODE SCHOTTKY 20V 500MA EMD2
на замовлення 7369 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RBE07V20ATE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 700MA UMD2
Description: DIODE SCHOTTKY 20V 700MA UMD2
на замовлення 5570 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RF01VM2STE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 250V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
Description: DIODE GEN PURP 250V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
на замовлення 42825 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RF101L2SDDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1216 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.78 грн |
| 10+ | 34.69 грн |
| 100+ | 22.36 грн |
| 500+ | 15.97 грн |
| RF4E075ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
на замовлення 1894 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.90 грн |
| 10+ | 44.48 грн |
| 100+ | 29.06 грн |
| 500+ | 21.03 грн |
| 1000+ | 19.03 грн |
| RFN3BM2SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.45 грн |
| 10+ | 80.63 грн |
| 100+ | 62.70 грн |
| 500+ | 49.88 грн |
| 1000+ | 40.63 грн |
| RFN6BM2DTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 3A TO252
Description: DIODE ARRAY GP 200V 3A TO252
на замовлення 2467 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RFNL5BM6STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Description: DIODE GEN PURP 600V 5A TO252
на замовлення 1764 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.62 грн |
| 10+ | 68.33 грн |
| 100+ | 52.41 грн |
| 500+ | 38.88 грн |
| 1000+ | 31.10 грн |
| RFU02VSM6STR |
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Виробник: Rohm Semiconductor
Description: DIODE GP 600V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 11575 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.91 грн |
| 17+ | 19.08 грн |
| 100+ | 12.01 грн |
| 500+ | 8.40 грн |
| 1000+ | 7.47 грн |
| RFUH10NS4STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 430V 10A LPDS
Description: DIODE GEN PURP 430V 10A LPDS
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN242CST2RA |
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Виробник: Rohm Semiconductor
Description: DIODE PIN HF SW 30V 100MA VMN2
Description: DIODE PIN HF SW 30V 100MA VMN2
на замовлення 7950 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RQ3E180AJTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
на замовлення 11637 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.61 грн |
| 10+ | 75.05 грн |
| 100+ | 50.25 грн |
| 500+ | 37.18 грн |
| 1000+ | 33.97 грн |
| RQ5E040AJTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
на замовлення 1702 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.10 грн |
| 10+ | 33.96 грн |
| 100+ | 21.93 грн |
| 500+ | 15.71 грн |
| 1000+ | 14.14 грн |
| RQ6E055BNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 5.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
Description: MOSFET N-CH 30V 5.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 82.30 грн |
| 10+ | 49.41 грн |
| 100+ | 32.27 грн |
| 500+ | 23.37 грн |
| 1000+ | 21.13 грн |
| RR2L4SDDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 2A PMDS
Description: DIODE GEN PURP 400V 2A PMDS
на замовлення 2155 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RR2L6SDDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 2A PMDS
Description: DIODE GEN PURP 600V 2A PMDS
на замовлення 2954 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RRE02VS4SGTR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 200MA TUMD2S
Description: DIODE GEN PURP 400V 200MA TUMD2S
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RRE02VSM4STR |
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Виробник: Rohm Semiconductor
Description: DIODE GP 400V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GP 400V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 17167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.23 грн |
| 18+ | 18.20 грн |
| 100+ | 11.42 грн |
| 500+ | 7.97 грн |
| 1000+ | 7.08 грн |
| RRE07VSM4STR |
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Виробник: Rohm Semiconductor
Description: DIODE GP 400V 700MA TUMD2SM
Description: DIODE GP 400V 700MA TUMD2SM
на замовлення 2470 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS1E350BNTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A 8HSOP
Description: MOSFET N-CH 30V 35A 8HSOP
на замовлення 1593 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.52 грн |
| 10+ | 133.43 грн |
| 100+ | 107.30 грн |
| 500+ | 82.73 грн |
| 1000+ | 68.55 грн |
| RS3E075ATTB |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
Description: MOSFET P-CH 30V 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
на замовлення 11173 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.42 грн |
| 10+ | 64.45 грн |
| 100+ | 49.41 грн |
| 500+ | 36.66 грн |
| 1000+ | 29.32 грн |
| RSA30LDDTE25 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RSB6.8SMT2N |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD2
Description: TVS DIODE 3.5VWM EMD2
товару немає в наявності
В кошику
од. на суму грн.
| RSH070N05GZETB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET N-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
на замовлення 2200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.20 грн |
| 10+ | 82.57 грн |
| 100+ | 55.31 грн |
| 500+ | 40.91 грн |
| 1000+ | 37.37 грн |
| RSH070P05GZETB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 176.35 грн |
| 10+ | 122.19 грн |
| 100+ | 102.75 грн |
| 500+ | 80.47 грн |
| 1000+ | 73.82 грн |
| RSX201VAM30TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
на замовлення 46825 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.31 грн |
| 36+ | 9.22 грн |
| 100+ | 7.53 грн |
| 500+ | 5.71 грн |
| 1000+ | 5.21 грн |
| RUS100N02TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
на замовлення 104 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 231.78 грн |
| 10+ | 144.43 грн |
| 100+ | 99.62 грн |
| BA12004BF-E2 |
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Виробник: Rohm Semiconductor
Description: TRANS 7NPN DARL 60V 0.5A 16SOP
Description: TRANS 7NPN DARL 60V 0.5A 16SOP
на замовлення 2344 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BA2904WF-E2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP GROUND SENSE SOP8
Description: IC OP AMP GROUND SENSE SOP8
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BD48K38G-TL |
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Виробник: Rohm Semiconductor
Description: IC VOLTAGE SUPERVISOR 3SSOP
Description: IC VOLTAGE SUPERVISOR 3SSOP
товару немає в наявності
В кошику
од. на суму грн.
| BD49K26G-TL |
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Виробник: Rohm Semiconductor
Description: IC VOLTAGE DETECTOR SSOP3
Description: IC VOLTAGE DETECTOR SSOP3
товару немає в наявності
В кошику
од. на суму грн.
| BD49K44G-TL |
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Виробник: Rohm Semiconductor
Description: IC VOLTAGE DETECTOR SSOP3
Description: IC VOLTAGE DETECTOR SSOP3
товару немає в наявності
В кошику
од. на суму грн.
| BD65499MUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC LENS DVR 1-2CH 28VQFN
Description: IC LENS DVR 1-2CH 28VQFN
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BD6962FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER PWM 8-MSOP
Description: IC MOTOR DRIVER PWM 8-MSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.






































