Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104137) > Сторінка 748 з 1736
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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DTC013ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.15W VMT3 |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DTC013ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 5520 шт: термін постачання 21-31 дні (днів) |
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DTC024XMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.15W VMT3 |
на замовлення 7035 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DTC024XUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.2W UMT3F |
на замовлення 2044 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EDZVFHT2R12B | Rohm Semiconductor |
Description: DIODE ZENER 12V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Grade: Automotive Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 9 V Qualification: AEC-Q101 |
на замовлення 21413 шт: термін постачання 21-31 дні (днів) |
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EMB51T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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EMB61T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EMB75T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD53T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD59T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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EMD62T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA |
на замовлення 5892 шт: термін постачання 21-31 дні (днів) |
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EMH59T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EMH60T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA |
на замовлення 47960 шт: термін постачання 21-31 дні (днів) |
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EMH61T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 334 шт: термін постачання 21-31 дні (днів) |
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EMH75T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EMT51T2R | Rohm Semiconductor |
Description: TRANS 2PNP 20V 0.2A 6EMT |
на замовлення 5813 шт: термін постачання 21-31 дні (днів) |
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EMX52T2R | Rohm Semiconductor |
Description: TRANS 2NPN 50V 0.1A EMT6Part Status: Active Supplier Device Package: EMT6 Frequency - Transition: 350MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 12985 шт: термін постачання 21-31 дні (днів) |
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EMZ51T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A EMT6Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 200mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: NPN, PNP Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Frequency - Transition: 400MHz, 350MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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LM4559FVT-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 3.3mA Slew Rate: 3.5V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-TSSOP-B Part Status: Active Number of Circuits: 2 Voltage - Supply Span (Min): 8 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LM4565FVM-GTR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 4.5mA Slew Rate: 5V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 70 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 160 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 36 V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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LMR341G-GTR | Rohm Semiconductor |
Description: IC CMOS 1 CIRCUIT 6SSOPVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.7 V Current - Output / Channel: 45 mA Number of Circuits: 1 Supplier Device Package: 6-SSOP Voltage - Input Offset: 250 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 2 MHz Slew Rate: 1V/µs Current - Supply: 80µA Operating Temperature: -40°C ~ 85°C Amplifier Type: CMOS Package / Case: SOT-23-6 Packaging: Cut Tape (CT) Mounting Type: Surface Mount |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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LMR342F-GE2 | Rohm Semiconductor |
Description: IC CMOS 2 CIRCUIT 8SOP |
на замовлення 851 шт: термін постачання 21-31 дні (днів) |
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LMR342FVM-GTR | Rohm Semiconductor |
Description: IC OP AMP GROUND SENSE 8MSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR342FVT-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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LMR344FJ-GE2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14SOPJVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.7 V Current - Output / Channel: 113 mA Number of Circuits: 4 Supplier Device Package: 14-SOPJ Voltage - Input Offset: 250 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 2 MHz Slew Rate: 1V/µs Current - Supply: 400µA Operating Temperature: -40°C ~ 85°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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LMR344FVJ-E2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14TSSOPPackage / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.7 V Current - Output / Channel: 113 mA Number of Circuits: 4 Supplier Device Package: 14-TSSOP-BJ Voltage - Input Offset: 250 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 2 MHz Slew Rate: 1V/µs Current - Supply: 400µA Operating Temperature: -40°C ~ 85°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Rail-to-Rail |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LMR822F-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8SOPVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 45 mA Number of Circuits: 2 Supplier Device Package: 8-SOP Voltage - Input Offset: 1 mV Current - Input Bias: 40 nA Gain Bandwidth Product: 5.5 MHz Slew Rate: 2V/µs Current - Supply: 650µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 1970 шт: термін постачання 21-31 дні (днів) |
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LMR822FJ-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT SOP8JSupplier Device Package: 8-SOP-J Voltage - Input Offset: 1 mV Current - Input Bias: 40 nA Gain Bandwidth Product: 5.5 MHz Slew Rate: 2V/µs Current - Supply: 650µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 45 mA Number of Circuits: 2 Part Status: Active |
на замовлення 1766 шт: термін постачання 21-31 дні (днів) |
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LMR822FV-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 8SSOP |
на замовлення 2460 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR824F-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 4 CIRCUIT 14SOPAmplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 14-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 45 mA Number of Circuits: 4 Supplier Device Package: 14-SOP Voltage - Input Offset: 1 mV Current - Input Bias: 40 nA Gain Bandwidth Product: 5.5 MHz Slew Rate: 2V/µs Current - Supply: 1.13mA Operating Temperature: -40°C ~ 85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LMR824FJ-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING SOP14J |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR824FVJ-E2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 14TSSOP |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR932FVJ-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 8TSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR932FVM-GTR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPSupplier Device Package: 8-MSOP Voltage - Input Offset: 1 mV Current - Input Bias: 5 nA Gain Bandwidth Product: 1.4 MHz Slew Rate: 0.35V/µs Current - Supply: 140µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5 V Voltage - Supply Span (Min): 1.8 V Current - Output / Channel: 90 mA Number of Circuits: 2 |
на замовлення 6012 шт: термін постачання 21-31 дні (днів) |
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QH8MA3TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Part Status: Active Supplier Device Package: TSMT8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QS5W1TR | Rohm Semiconductor |
Description: TRANS 2NPN 30V 3A TSMT5 |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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QS5W2TR | Rohm Semiconductor |
Description: TRANS 2NPN 50V 3A TSMT5 |
на замовлення 268 шт: термін постачання 21-31 дні (днів) |
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QS5Y1TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 30V 3A TSMT5 |
на замовлення 2595 шт: термін постачання 21-31 дні (днів) |
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QS6Z5TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 1A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 1.25W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz, 400MHz Supplier Device Package: TSMT6 (SC-95) |
на замовлення 3070 шт: термін постачання 21-31 дні (днів) |
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QS8K13TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 6A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 2592 шт: термін постачання 21-31 дні (днів) |
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RB050L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDSQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 1 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Not For New Designs Operating Temperature - Junction: 125°C (Max) Supplier Device Package: PMDS Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 1406 шт: термін постачання 21-31 дні (днів) |
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RB050L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDS Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 3277 шт: термін постачання 21-31 дні (днів) |
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RB055L-30DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 293 шт: термін постачання 21-31 дні (днів) |
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RB055L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 2730 шт: термін постачання 21-31 дні (днів) |
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RB058L150TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 1035 шт: термін постачання 21-31 дні (днів) |
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RB058L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 439 шт: термін постачання 21-31 дні (днів) |
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RB058L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Current - Reverse Leakage @ Vr: 4 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 4304 шт: термін постачання 21-31 дні (днів) |
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RB060L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDS Operating Temperature - Junction: 125°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V Qualification: AEC-Q101 |
на замовлення 1267 шт: термін постачання 21-31 дні (днів) |
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RB060M-40DDTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB060M-60DDTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 2A PMDU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB068L100DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 2A PMDSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 3737 шт: термін постачання 21-31 дні (днів) |
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RB068L150TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 2A PMDS |
на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RB068L-40TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDS |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RB078BM30STL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 5A TO252 |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RB085BM-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB085BM-60TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
на замовлення 1909 шт: термін постачання 21-31 дні (днів) |
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RB085BM-90TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
на замовлення 1580 шт: термін постачання 21-31 дні (днів) |
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RB095BM-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 3A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB095BM-90TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 3A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB160MM-90TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 90V 1A PMDUPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
на замовлення 23793 шт: термін постачання 21-31 дні (днів) |
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| DTC013ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
Description: TRANS PREBIAS NPN 0.15W VMT3
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| DTC013ZUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 5520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.68 грн |
| 34+ | 8.91 грн |
| 100+ | 5.50 грн |
| 500+ | 3.78 грн |
| 1000+ | 3.33 грн |
| DTC024XMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
Description: TRANS PREBIAS NPN 0.15W VMT3
на замовлення 7035 шт:
термін постачання 21-31 дні (днів)
| DTC024XUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.2W UMT3F
Description: TRANS PREBIAS NPN 0.2W UMT3F
на замовлення 2044 шт:
термін постачання 21-31 дні (днів)
| EDZVFHT2R12B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 12V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Qualification: AEC-Q101
на замовлення 21413 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.03 грн |
| 28+ | 10.87 грн |
| 100+ | 3.71 грн |
| 500+ | 3.43 грн |
| 1000+ | 2.81 грн |
| 2000+ | 2.57 грн |
| EMB51T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.06 грн |
| 12+ | 25.89 грн |
| 100+ | 14.68 грн |
| 500+ | 9.12 грн |
| 1000+ | 7.00 грн |
| 2000+ | 6.08 грн |
| EMB61T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| EMB75T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 14+ | 22.04 грн |
| 100+ | 11.13 грн |
| 500+ | 8.52 грн |
| 1000+ | 6.32 грн |
| 2000+ | 5.32 грн |
| EMD53T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 14+ | 22.04 грн |
| 100+ | 11.13 грн |
| 500+ | 8.52 грн |
| 1000+ | 6.32 грн |
| 2000+ | 5.32 грн |
| EMD59T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 14+ | 22.04 грн |
| 100+ | 11.13 грн |
| 500+ | 8.52 грн |
| 1000+ | 6.32 грн |
| 2000+ | 5.32 грн |
| EMD62T2R |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
на замовлення 5892 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.87 грн |
| 20+ | 15.62 грн |
| 100+ | 9.84 грн |
| 500+ | 6.87 грн |
| 1000+ | 6.10 грн |
| 2000+ | 5.45 грн |
| EMH59T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| EMH60T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
на замовлення 47960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 14+ | 22.04 грн |
| 100+ | 11.13 грн |
| 500+ | 8.52 грн |
| 1000+ | 6.32 грн |
| 2000+ | 5.32 грн |
| EMH61T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 15+ | 20.98 грн |
| 100+ | 11.87 грн |
| EMH75T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| EMT51T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP 20V 0.2A 6EMT
Description: TRANS 2PNP 20V 0.2A 6EMT
на замовлення 5813 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 15+ | 20.98 грн |
| 100+ | 11.87 грн |
| 500+ | 7.38 грн |
| 1000+ | 5.66 грн |
| 2000+ | 4.92 грн |
| EMX52T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.1A EMT6
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN 50V 0.1A EMT6
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 12985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 14+ | 22.27 грн |
| 100+ | 11.24 грн |
| 500+ | 8.60 грн |
| 1000+ | 6.38 грн |
| 2000+ | 5.37 грн |
| EMZ51T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A EMT6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz, 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Description: TRANS NPN/PNP 20V 0.2A EMT6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz, 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 14+ | 22.04 грн |
| 100+ | 11.13 грн |
| 500+ | 8.52 грн |
| 1000+ | 6.32 грн |
| 2000+ | 5.32 грн |
| LM4559FVT-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
товару немає в наявності
В кошику
од. на суму грн.
| LM4565FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.11 грн |
| 11+ | 29.36 грн |
| LMR341G-GTR |
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Виробник: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 6SSOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 45 mA
Number of Circuits: 1
Supplier Device Package: 6-SSOP
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 80µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Description: IC CMOS 1 CIRCUIT 6SSOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 45 mA
Number of Circuits: 1
Supplier Device Package: 6-SSOP
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 80µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.70 грн |
| 14+ | 23.10 грн |
| 25+ | 20.62 грн |
| 100+ | 16.82 грн |
| 250+ | 15.61 грн |
| 500+ | 14.88 грн |
| 1000+ | 14.05 грн |
| LMR342F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC CMOS 2 CIRCUIT 8SOP
Description: IC CMOS 2 CIRCUIT 8SOP
на замовлення 851 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.22 грн |
| 10+ | 48.91 грн |
| 25+ | 45.92 грн |
| 100+ | 35.18 грн |
| 250+ | 32.68 грн |
| 500+ | 27.81 грн |
| LMR342FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC OP AMP GROUND SENSE 8MSOP
Description: IC OP AMP GROUND SENSE 8MSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| LMR342FVT-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.60 грн |
| 10+ | 40.76 грн |
| LMR344FJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14SOPJ
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 113 mA
Number of Circuits: 4
Supplier Device Package: 14-SOPJ
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC CMOS 4 CIRCUIT 14SOPJ
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 113 mA
Number of Circuits: 4
Supplier Device Package: 14-SOPJ
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.03 грн |
| 10+ | 90.42 грн |
| 25+ | 85.86 грн |
| 100+ | 66.18 грн |
| 250+ | 61.86 грн |
| 500+ | 54.67 грн |
| 1000+ | 42.45 грн |
| LMR344FVJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 113 mA
Number of Circuits: 4
Supplier Device Package: 14-TSSOP-BJ
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Description: IC CMOS 4 CIRCUIT 14TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 113 mA
Number of Circuits: 4
Supplier Device Package: 14-TSSOP-BJ
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
товару немає в наявності
В кошику
од. на суму грн.
| LMR822F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Supplier Device Package: 8-SOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Supplier Device Package: 8-SOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.33 грн |
| 11+ | 28.68 грн |
| 25+ | 25.72 грн |
| 100+ | 21.06 грн |
| 250+ | 19.59 грн |
| 500+ | 18.70 грн |
| 1000+ | 17.68 грн |
| LMR822FJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT SOP8J
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Part Status: Active
Description: IC OPAMP GP 2 CIRCUIT SOP8J
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Part Status: Active
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.52 грн |
| 10+ | 47.25 грн |
| 25+ | 39.28 грн |
| 100+ | 28.33 грн |
| 250+ | 24.14 грн |
| 500+ | 21.56 грн |
| 1000+ | 19.08 грн |
| LMR822FV-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8SSOP
Description: IC OP AMP FULL SWING 8SSOP
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)
| LMR824F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 4
Supplier Device Package: 14-SOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 1.13mA
Operating Temperature: -40°C ~ 85°C
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 4
Supplier Device Package: 14-SOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 1.13mA
Operating Temperature: -40°C ~ 85°C
товару немає в наявності
В кошику
од. на суму грн.
| LMR824FJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING SOP14J
Description: IC OP AMP FULL SWING SOP14J
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| LMR824FVJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 14TSSOP
Description: IC OP AMP FULL SWING 14TSSOP
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
| LMR932FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8TSSOP
Description: IC OP AMP FULL SWING 8TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| LMR932FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 5 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 0.35V/µs
Current - Supply: 140µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 90 mA
Number of Circuits: 2
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 5 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 0.35V/µs
Current - Supply: 140µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 90 mA
Number of Circuits: 2
на замовлення 6012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.79 грн |
| 10+ | 49.74 грн |
| 25+ | 46.74 грн |
| 100+ | 35.79 грн |
| 250+ | 33.24 грн |
| 500+ | 28.29 грн |
| 1000+ | 22.26 грн |
| QH8MA3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Part Status: Active
Supplier Device Package: TSMT8
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Part Status: Active
Supplier Device Package: TSMT8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.87 грн |
| 10+ | 50.72 грн |
| 100+ | 31.87 грн |
| 500+ | 24.26 грн |
| 1000+ | 21.15 грн |
| QS5W1TR |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 30V 3A TSMT5
Description: TRANS 2NPN 30V 3A TSMT5
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.81 грн |
| 10+ | 40.38 грн |
| QS5W2TR |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 3A TSMT5
Description: TRANS 2NPN 50V 3A TSMT5
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.81 грн |
| 10+ | 39.10 грн |
| 100+ | 29.24 грн |
| QS5Y1TR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 3A TSMT5
Description: TRANS NPN/PNP 30V 3A TSMT5
на замовлення 2595 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.30 грн |
| 10+ | 44.91 грн |
| 100+ | 34.46 грн |
| 500+ | 25.56 грн |
| 1000+ | 20.45 грн |
| QS6Z5TR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
на замовлення 3070 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.00 грн |
| 10+ | 52.68 грн |
| 100+ | 34.83 грн |
| 500+ | 25.49 грн |
| 1000+ | 23.17 грн |
| QS8K13TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 2592 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.60 грн |
| 10+ | 83.18 грн |
| 100+ | 56.02 грн |
| 500+ | 41.64 грн |
| 1000+ | 38.13 грн |
| RB050L-40DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Not For New Designs
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 3A PMDS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Not For New Designs
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 1406 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.11 грн |
| 10+ | 42.49 грн |
| 100+ | 28.37 грн |
| 500+ | 20.58 грн |
| RB050L-60DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 3A PMDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 3277 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.16 грн |
| 10+ | 41.97 грн |
| 100+ | 29.04 грн |
| 500+ | 22.77 грн |
| RB055L-30DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
на замовлення 293 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.73 грн |
| 10+ | 31.85 грн |
| 100+ | 22.85 грн |
| RB055L-60DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
на замовлення 2730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.30 грн |
| 10+ | 33.29 грн |
| 100+ | 23.42 грн |
| 500+ | 16.82 грн |
| RB058L150TE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Qualification: AEC-Q101
на замовлення 1035 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.25 грн |
| 11+ | 27.63 грн |
| 100+ | 17.74 грн |
| 500+ | 12.62 грн |
| RB058L-40DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Qualification: AEC-Q101
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 40.76 грн |
| 100+ | 26.64 грн |
| RB058L-60DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4304 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.54 грн |
| 10+ | 34.95 грн |
| 100+ | 24.19 грн |
| 500+ | 18.97 грн |
| RB060L-40DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Qualification: AEC-Q101
на замовлення 1267 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.68 грн |
| 10+ | 31.25 грн |
| 100+ | 24.62 грн |
| 500+ | 17.77 грн |
| RB060M-40DDTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDU
Description: DIODE SCHOTTKY 40V 2A PMDU
товару немає в наявності
В кошику
од. на суму грн.
| RB060M-60DDTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDU
Description: DIODE SCHOTTKY 60V 2A PMDU
товару немає в наявності
В кошику
од. на суму грн.
| RB068L100DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Qualification: AEC-Q101
на замовлення 3737 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 43.10 грн |
| 100+ | 32.58 грн |
| 500+ | 23.75 грн |
| RB068L150TE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDS
Description: DIODE SCHOTTKY 150V 2A PMDS
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
| RB068L-40TE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Description: DIODE SCHOTTKY 40V 2A PMDS
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| RB078BM30STL |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252
Description: DIODE SCHOTTKY 30V 5A TO252
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| RB085BM-30TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| RB085BM-60TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
на замовлення 1909 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.33 грн |
| 10+ | 116.46 грн |
| 100+ | 79.91 грн |
| 500+ | 60.29 грн |
| 1000+ | 55.56 грн |
| RB085BM-90TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARRAY SCHOTT 90V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
на замовлення 1580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.33 грн |
| 10+ | 116.31 грн |
| 100+ | 79.81 грн |
| 500+ | 60.21 грн |
| 1000+ | 55.49 грн |
| RB095BM-30TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| RB095BM-90TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARRAY SCHOTT 90V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
товару немає в наявності
В кошику
од. на суму грн.
| RB160MM-90TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 90V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
на замовлення 23793 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.65 грн |
| 18+ | 17.36 грн |
| 100+ | 12.37 грн |
| 500+ | 8.71 грн |
| 1000+ | 7.77 грн |



































