Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104142) > Сторінка 748 з 1736
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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CDZT2RA3.6B | Rohm Semiconductor |
Description: DIODE ZENER 3.6V 100MW VMN2 |
на замовлення 7380 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CDZT2RA3.9B | Rohm Semiconductor |
Description: DIODE ZENER 3.9V 100MW VMN2 |
на замовлення 5715 шт: термін постачання 21-31 дні (днів) |
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CDZT2RA4.3B | Rohm Semiconductor |
Description: DIODE ZENER 4.3V 100MW VMN2 |
на замовлення 7900 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CDZT2RA4.7B | Rohm Semiconductor |
Description: DIODE ZENER 4.7V 100MW VMN2 |
на замовлення 7802 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CDZT2RA5.6B | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 100MW VMN2 |
на замовлення 7980 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CDZT2RA6.2B | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 100MW VMN2 |
на замовлення 14405 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CDZT2RA6.8B | Rohm Semiconductor |
Description: DIODE ZENER 6.8V 100MW VMN2 |
на замовлення 5270 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CDZT2RA7.5B | Rohm Semiconductor |
Description: DIODE ZENER 7.5V 100MW VMN2 |
на замовлення 7480 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CDZT2RA9.1B | Rohm Semiconductor |
Description: DIODE ZENER 9.1V 100MW VMN2 |
на замовлення 6900 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CSL0701DT5 | Rohm Semiconductor |
Description: LED ORANGE CLEAR SMDLens Size: 2.10mm Dia Lens Style: Round with Domed Top Part Status: Active Lens Transparency: Clear Wavelength - Dominant: 605nm Height (Max): 3.30mm Current - Test: 20mA Lens Color: Colorless Voltage - Forward (Vf) (Typ): 2.1V Configuration: Standard Millicandela Rating: 35000mcd Mounting Type: Surface Mount Size / Dimension: 2.90mm L x 2.50mm W Color: Orange Package / Case: 2-SMD, No Lead Packaging: Cut Tape (CT) |
на замовлення 434 шт: термін постачання 21-31 дні (днів) |
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CSL0701UT5 | Rohm Semiconductor |
Description: LED RED CLEAR SMDLens Size: 2.10mm Dia Lens Style: Round with Domed Top Lens Transparency: Clear Wavelength - Dominant: 624nm Height (Max): 3.30mm Current - Test: 20mA Lens Color: Colorless Voltage - Forward (Vf) (Typ): 2.1V Configuration: Standard Millicandela Rating: 18000mcd Mounting Type: Surface Mount Size / Dimension: 2.90mm L x 2.50mm W Color: Red Package / Case: 2-SMD, No Lead Packaging: Cut Tape (CT) |
на замовлення 1242 шт: термін постачання 21-31 дні (днів) |
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DAN217UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 200 nA @ 70 V |
на замовлення 80651 шт: термін постачання 21-31 дні (днів) |
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DAN217WMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD3F Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
на замовлення 24280 шт: термін постачання 21-31 дні (днів) |
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DAP202UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
на замовлення 2838 шт: термін постачання 21-31 дні (днів) |
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DTA013ZEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.15W SC89Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA024XUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.2W UMT3F |
на замовлення 2446 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DTA125TKAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 200 kOhms |
на замовлення 2971 шт: термін постачання 21-31 дні (днів) |
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DTC013ZEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 8743 шт: термін постачання 21-31 дні (днів) |
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DTC013ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.15W VMT3 |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DTC013ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 5520 шт: термін постачання 21-31 дні (днів) |
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DTC024XMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.15W VMT3 |
на замовлення 7035 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DTC024XUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.2W UMT3F |
на замовлення 2044 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EDZVFHT2R12B | Rohm Semiconductor |
Description: DIODE ZENER 12V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Grade: Automotive Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 9 V Qualification: AEC-Q101 |
на замовлення 21413 шт: термін постачання 21-31 дні (днів) |
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EMB51T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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EMB61T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EMB75T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD53T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD59T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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EMD62T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA |
на замовлення 5892 шт: термін постачання 21-31 дні (днів) |
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EMH59T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EMH60T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA |
на замовлення 47960 шт: термін постачання 21-31 дні (днів) |
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EMH61T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 334 шт: термін постачання 21-31 дні (днів) |
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EMH75T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EMT51T2R | Rohm Semiconductor |
Description: TRANS 2PNP 20V 0.2A 6EMT |
на замовлення 5813 шт: термін постачання 21-31 дні (днів) |
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EMX52T2R | Rohm Semiconductor |
Description: TRANS 2NPN 50V 0.1A EMT6Part Status: Active Supplier Device Package: EMT6 Frequency - Transition: 350MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 12985 шт: термін постачання 21-31 дні (днів) |
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EMZ51T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A EMT6Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 200mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: NPN, PNP Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Frequency - Transition: 400MHz, 350MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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LM4559FVT-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 3.3mA Slew Rate: 3.5V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-TSSOP-B Part Status: Active Number of Circuits: 2 Voltage - Supply Span (Min): 8 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LM4565FVM-GTR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 4.5mA Slew Rate: 5V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 70 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 160 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 36 V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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LMR341G-GTR | Rohm Semiconductor |
Description: IC CMOS 1 CIRCUIT 6SSOPVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.7 V Current - Output / Channel: 45 mA Number of Circuits: 1 Supplier Device Package: 6-SSOP Voltage - Input Offset: 250 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 2 MHz Slew Rate: 1V/µs Current - Supply: 80µA Operating Temperature: -40°C ~ 85°C Amplifier Type: CMOS Package / Case: SOT-23-6 Packaging: Cut Tape (CT) Mounting Type: Surface Mount |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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LMR342F-GE2 | Rohm Semiconductor |
Description: IC CMOS 2 CIRCUIT 8SOP |
на замовлення 851 шт: термін постачання 21-31 дні (днів) |
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LMR342FVM-GTR | Rohm Semiconductor |
Description: IC OP AMP GROUND SENSE 8MSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR342FVT-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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LMR344FJ-GE2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14SOPJVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.7 V Current - Output / Channel: 113 mA Number of Circuits: 4 Supplier Device Package: 14-SOPJ Voltage - Input Offset: 250 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 2 MHz Slew Rate: 1V/µs Current - Supply: 400µA Operating Temperature: -40°C ~ 85°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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LMR344FVJ-E2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14TSSOPPackage / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.7 V Current - Output / Channel: 113 mA Number of Circuits: 4 Supplier Device Package: 14-TSSOP-BJ Voltage - Input Offset: 250 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 2 MHz Slew Rate: 1V/µs Current - Supply: 400µA Operating Temperature: -40°C ~ 85°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Rail-to-Rail |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LMR822F-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8SOPVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 45 mA Number of Circuits: 2 Supplier Device Package: 8-SOP Voltage - Input Offset: 1 mV Current - Input Bias: 40 nA Gain Bandwidth Product: 5.5 MHz Slew Rate: 2V/µs Current - Supply: 650µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 1970 шт: термін постачання 21-31 дні (днів) |
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LMR822FJ-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT SOP8JSupplier Device Package: 8-SOP-J Voltage - Input Offset: 1 mV Current - Input Bias: 40 nA Gain Bandwidth Product: 5.5 MHz Slew Rate: 2V/µs Current - Supply: 650µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 45 mA Number of Circuits: 2 Part Status: Active |
на замовлення 1766 шт: термін постачання 21-31 дні (днів) |
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LMR822FV-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 8SSOP |
на замовлення 2460 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR824F-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 4 CIRCUIT 14SOPAmplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 14-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 45 mA Number of Circuits: 4 Supplier Device Package: 14-SOP Voltage - Input Offset: 1 mV Current - Input Bias: 40 nA Gain Bandwidth Product: 5.5 MHz Slew Rate: 2V/µs Current - Supply: 1.13mA Operating Temperature: -40°C ~ 85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LMR824FJ-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING SOP14J |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR824FVJ-E2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 14TSSOP |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR932FVJ-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 8TSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LMR932FVM-GTR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPSupplier Device Package: 8-MSOP Voltage - Input Offset: 1 mV Current - Input Bias: 5 nA Gain Bandwidth Product: 1.4 MHz Slew Rate: 0.35V/µs Current - Supply: 140µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5 V Voltage - Supply Span (Min): 1.8 V Current - Output / Channel: 90 mA Number of Circuits: 2 |
на замовлення 6012 шт: термін постачання 21-31 дні (днів) |
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QH8MA3TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Part Status: Active Supplier Device Package: TSMT8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QS5W1TR | Rohm Semiconductor |
Description: TRANS 2NPN 30V 3A TSMT5 |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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QS5W2TR | Rohm Semiconductor |
Description: TRANS 2NPN 50V 3A TSMT5 |
на замовлення 268 шт: термін постачання 21-31 дні (днів) |
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QS5Y1TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 30V 3A TSMT5 |
на замовлення 2595 шт: термін постачання 21-31 дні (днів) |
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QS6Z5TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 1A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 1.25W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz, 400MHz Supplier Device Package: TSMT6 (SC-95) |
на замовлення 3070 шт: термін постачання 21-31 дні (днів) |
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QS8K13TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 6A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 2592 шт: термін постачання 21-31 дні (днів) |
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RB050L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDSQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 1 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Not For New Designs Operating Temperature - Junction: 125°C (Max) Supplier Device Package: PMDS Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 1406 шт: термін постачання 21-31 дні (днів) |
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RB050L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDS Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 3277 шт: термін постачання 21-31 дні (днів) |
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| CDZT2RA3.6B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.6V 100MW VMN2
Description: DIODE ZENER 3.6V 100MW VMN2
на замовлення 7380 шт:
термін постачання 21-31 дні (днів)
| CDZT2RA3.9B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.9V 100MW VMN2
Description: DIODE ZENER 3.9V 100MW VMN2
на замовлення 5715 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.17 грн |
| 13+ | 24.75 грн |
| 100+ | 14.02 грн |
| 500+ | 8.71 грн |
| 1000+ | 6.68 грн |
| 2000+ | 5.81 грн |
| CDZT2RA4.3B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.3V 100MW VMN2
Description: DIODE ZENER 4.3V 100MW VMN2
на замовлення 7900 шт:
термін постачання 21-31 дні (днів)
| CDZT2RA4.7B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.7V 100MW VMN2
Description: DIODE ZENER 4.7V 100MW VMN2
на замовлення 7802 шт:
термін постачання 21-31 дні (днів)
| CDZT2RA5.6B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 100MW VMN2
Description: DIODE ZENER 5.6V 100MW VMN2
на замовлення 7980 шт:
термін постачання 21-31 дні (днів)
| CDZT2RA6.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW VMN2
Description: DIODE ZENER 6.2V 100MW VMN2
на замовлення 14405 шт:
термін постачання 21-31 дні (днів)
| CDZT2RA6.8B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 100MW VMN2
Description: DIODE ZENER 6.8V 100MW VMN2
на замовлення 5270 шт:
термін постачання 21-31 дні (днів)
| CDZT2RA7.5B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.5V 100MW VMN2
Description: DIODE ZENER 7.5V 100MW VMN2
на замовлення 7480 шт:
термін постачання 21-31 дні (днів)
| CDZT2RA9.1B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 9.1V 100MW VMN2
Description: DIODE ZENER 9.1V 100MW VMN2
на замовлення 6900 шт:
термін постачання 21-31 дні (днів)
| CSL0701DT5 |
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Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR SMD
Lens Size: 2.10mm Dia
Lens Style: Round with Domed Top
Part Status: Active
Lens Transparency: Clear
Wavelength - Dominant: 605nm
Height (Max): 3.30mm
Current - Test: 20mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 2.1V
Configuration: Standard
Millicandela Rating: 35000mcd
Mounting Type: Surface Mount
Size / Dimension: 2.90mm L x 2.50mm W
Color: Orange
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Description: LED ORANGE CLEAR SMD
Lens Size: 2.10mm Dia
Lens Style: Round with Domed Top
Part Status: Active
Lens Transparency: Clear
Wavelength - Dominant: 605nm
Height (Max): 3.30mm
Current - Test: 20mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 2.1V
Configuration: Standard
Millicandela Rating: 35000mcd
Mounting Type: Surface Mount
Size / Dimension: 2.90mm L x 2.50mm W
Color: Orange
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
на замовлення 434 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.51 грн |
| 10+ | 75.24 грн |
| 100+ | 56.86 грн |
| CSL0701UT5 |
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Виробник: Rohm Semiconductor
Description: LED RED CLEAR SMD
Lens Size: 2.10mm Dia
Lens Style: Round with Domed Top
Lens Transparency: Clear
Wavelength - Dominant: 624nm
Height (Max): 3.30mm
Current - Test: 20mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 2.1V
Configuration: Standard
Millicandela Rating: 18000mcd
Mounting Type: Surface Mount
Size / Dimension: 2.90mm L x 2.50mm W
Color: Red
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Description: LED RED CLEAR SMD
Lens Size: 2.10mm Dia
Lens Style: Round with Domed Top
Lens Transparency: Clear
Wavelength - Dominant: 624nm
Height (Max): 3.30mm
Current - Test: 20mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 2.1V
Configuration: Standard
Millicandela Rating: 18000mcd
Mounting Type: Surface Mount
Size / Dimension: 2.90mm L x 2.50mm W
Color: Red
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
на замовлення 1242 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.15 грн |
| 10+ | 83.39 грн |
| 100+ | 63.34 грн |
| 500+ | 51.13 грн |
| 1000+ | 48.41 грн |
| DAN217UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
на замовлення 80651 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.76 грн |
| 33+ | 9.20 грн |
| 100+ | 6.05 грн |
| 500+ | 4.91 грн |
| 1000+ | 4.60 грн |
| DAN217WMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA EMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 24280 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.76 грн |
| 35+ | 8.68 грн |
| 100+ | 6.05 грн |
| 500+ | 4.91 грн |
| 1000+ | 4.60 грн |
| DAP202UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 2838 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.08 грн |
| 19+ | 16.15 грн |
| 100+ | 7.87 грн |
| 500+ | 6.16 грн |
| 1000+ | 4.28 грн |
| DTA013ZEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.15W SC89
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 0.15W SC89
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.19 грн |
| 19+ | 15.85 грн |
| 100+ | 8.42 грн |
| 500+ | 5.20 грн |
| 1000+ | 3.54 грн |
| DTA024XUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.2W UMT3F
Description: TRANS PREBIAS PNP 0.2W UMT3F
на замовлення 2446 шт:
термін постачання 21-31 дні (днів)
| DTA125TKAT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 200 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 200 kOhms
на замовлення 2971 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.64 грн |
| 24+ | 12.49 грн |
| 100+ | 6.10 грн |
| 500+ | 4.78 грн |
| 1000+ | 3.32 грн |
| DTC013ZEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 8743 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.76 грн |
| 35+ | 8.60 грн |
| 100+ | 5.31 грн |
| 500+ | 3.64 грн |
| 1000+ | 3.21 грн |
| DTC013ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
Description: TRANS PREBIAS NPN 0.15W VMT3
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| DTC013ZUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 5520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.53 грн |
| 34+ | 8.82 грн |
| 100+ | 5.45 грн |
| 500+ | 3.74 грн |
| 1000+ | 3.30 грн |
| DTC024XMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
Description: TRANS PREBIAS NPN 0.15W VMT3
на замовлення 7035 шт:
термін постачання 21-31 дні (днів)
| DTC024XUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.2W UMT3F
Description: TRANS PREBIAS NPN 0.2W UMT3F
на замовлення 2044 шт:
термін постачання 21-31 дні (днів)
| EDZVFHT2R12B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 12V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Qualification: AEC-Q101
на замовлення 21413 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.86 грн |
| 28+ | 10.77 грн |
| 100+ | 3.68 грн |
| 500+ | 3.39 грн |
| 1000+ | 2.79 грн |
| 2000+ | 2.55 грн |
| EMB51T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.73 грн |
| 12+ | 25.65 грн |
| 100+ | 14.55 грн |
| 500+ | 9.04 грн |
| 1000+ | 6.93 грн |
| 2000+ | 6.03 грн |
| EMB61T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| EMB75T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 14+ | 21.84 грн |
| 100+ | 11.03 грн |
| 500+ | 8.44 грн |
| 1000+ | 6.26 грн |
| 2000+ | 5.27 грн |
| EMD53T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 14+ | 21.84 грн |
| 100+ | 11.03 грн |
| 500+ | 8.44 грн |
| 1000+ | 6.26 грн |
| 2000+ | 5.27 грн |
| EMD59T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 14+ | 21.84 грн |
| 100+ | 11.03 грн |
| 500+ | 8.44 грн |
| 1000+ | 6.26 грн |
| 2000+ | 5.27 грн |
| EMD62T2R |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
на замовлення 5892 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.63 грн |
| 20+ | 15.48 грн |
| 100+ | 9.75 грн |
| 500+ | 6.80 грн |
| 1000+ | 6.04 грн |
| 2000+ | 5.40 грн |
| EMH59T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| EMH60T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
на замовлення 47960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 14+ | 21.84 грн |
| 100+ | 11.03 грн |
| 500+ | 8.44 грн |
| 1000+ | 6.26 грн |
| 2000+ | 5.27 грн |
| EMH61T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.51 грн |
| 15+ | 20.79 грн |
| 100+ | 11.76 грн |
| EMH75T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| EMT51T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP 20V 0.2A 6EMT
Description: TRANS 2PNP 20V 0.2A 6EMT
на замовлення 5813 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.51 грн |
| 15+ | 20.79 грн |
| 100+ | 11.76 грн |
| 500+ | 7.31 грн |
| 1000+ | 5.61 грн |
| 2000+ | 4.88 грн |
| EMX52T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.1A EMT6
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN 50V 0.1A EMT6
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 12985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 14+ | 22.06 грн |
| 100+ | 11.14 грн |
| 500+ | 8.52 грн |
| 1000+ | 6.32 грн |
| 2000+ | 5.32 грн |
| EMZ51T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A EMT6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz, 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Description: TRANS NPN/PNP 20V 0.2A EMT6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz, 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 14+ | 21.84 грн |
| 100+ | 11.03 грн |
| 500+ | 8.44 грн |
| 1000+ | 6.26 грн |
| 2000+ | 5.27 грн |
| LM4559FVT-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
товару немає в наявності
В кошику
од. на суму грн.
| LM4565FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.71 грн |
| 11+ | 29.09 грн |
| LMR341G-GTR |
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Виробник: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 6SSOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 45 mA
Number of Circuits: 1
Supplier Device Package: 6-SSOP
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 80µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Description: IC CMOS 1 CIRCUIT 6SSOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 45 mA
Number of Circuits: 1
Supplier Device Package: 6-SSOP
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 80µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.40 грн |
| 14+ | 22.88 грн |
| 25+ | 20.43 грн |
| 100+ | 16.67 грн |
| 250+ | 15.47 грн |
| 500+ | 14.75 грн |
| 1000+ | 13.92 грн |
| LMR342F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC CMOS 2 CIRCUIT 8SOP
Description: IC CMOS 2 CIRCUIT 8SOP
на замовлення 851 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.69 грн |
| 10+ | 48.46 грн |
| 25+ | 45.50 грн |
| 100+ | 34.85 грн |
| 250+ | 32.38 грн |
| 500+ | 27.55 грн |
| LMR342FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC OP AMP GROUND SENSE 8MSOP
Description: IC OP AMP GROUND SENSE 8MSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| LMR342FVT-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.15 грн |
| 10+ | 40.38 грн |
| LMR344FJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14SOPJ
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 113 mA
Number of Circuits: 4
Supplier Device Package: 14-SOPJ
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC CMOS 4 CIRCUIT 14SOPJ
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 113 mA
Number of Circuits: 4
Supplier Device Package: 14-SOPJ
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.07 грн |
| 10+ | 89.59 грн |
| 25+ | 85.08 грн |
| 100+ | 65.57 грн |
| 250+ | 61.29 грн |
| 500+ | 54.17 грн |
| 1000+ | 42.06 грн |
| LMR344FVJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 113 mA
Number of Circuits: 4
Supplier Device Package: 14-TSSOP-BJ
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Description: IC CMOS 4 CIRCUIT 14TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 113 mA
Number of Circuits: 4
Supplier Device Package: 14-TSSOP-BJ
Voltage - Input Offset: 250 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2 MHz
Slew Rate: 1V/µs
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
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В кошику
од. на суму грн.
| LMR822F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Supplier Device Package: 8-SOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Supplier Device Package: 8-SOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.94 грн |
| 11+ | 28.42 грн |
| 25+ | 25.49 грн |
| 100+ | 20.87 грн |
| 250+ | 19.41 грн |
| 500+ | 18.53 грн |
| 1000+ | 17.52 грн |
| LMR822FJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT SOP8J
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Part Status: Active
Description: IC OPAMP GP 2 CIRCUIT SOP8J
Supplier Device Package: 8-SOP-J
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Part Status: Active
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.77 грн |
| 10+ | 46.82 грн |
| 25+ | 38.92 грн |
| 100+ | 28.07 грн |
| 250+ | 23.92 грн |
| 500+ | 21.37 грн |
| 1000+ | 18.91 грн |
| LMR822FV-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8SSOP
Description: IC OP AMP FULL SWING 8SSOP
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)
| LMR824F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 4
Supplier Device Package: 14-SOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 1.13mA
Operating Temperature: -40°C ~ 85°C
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 45 mA
Number of Circuits: 4
Supplier Device Package: 14-SOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 40 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 2V/µs
Current - Supply: 1.13mA
Operating Temperature: -40°C ~ 85°C
товару немає в наявності
В кошику
од. на суму грн.
| LMR824FJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING SOP14J
Description: IC OP AMP FULL SWING SOP14J
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| LMR824FVJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 14TSSOP
Description: IC OP AMP FULL SWING 14TSSOP
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
| LMR932FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8TSSOP
Description: IC OP AMP FULL SWING 8TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| LMR932FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 5 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 0.35V/µs
Current - Supply: 140µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 90 mA
Number of Circuits: 2
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 5 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 0.35V/µs
Current - Supply: 140µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 90 mA
Number of Circuits: 2
на замовлення 6012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.25 грн |
| 10+ | 49.28 грн |
| 25+ | 46.31 грн |
| 100+ | 35.46 грн |
| 250+ | 32.93 грн |
| 500+ | 28.03 грн |
| 1000+ | 22.06 грн |
| QH8MA3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Part Status: Active
Supplier Device Package: TSMT8
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Part Status: Active
Supplier Device Package: TSMT8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.10 грн |
| 10+ | 50.26 грн |
| 100+ | 31.58 грн |
| 500+ | 24.04 грн |
| 1000+ | 20.96 грн |
| QS5W1TR |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 30V 3A TSMT5
Description: TRANS 2NPN 30V 3A TSMT5
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.37 грн |
| 10+ | 40.01 грн |
| QS5W2TR |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 3A TSMT5
Description: TRANS 2NPN 50V 3A TSMT5
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.37 грн |
| 10+ | 38.74 грн |
| 100+ | 28.97 грн |
| QS5Y1TR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 3A TSMT5
Description: TRANS NPN/PNP 30V 3A TSMT5
на замовлення 2595 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.81 грн |
| 10+ | 44.50 грн |
| 100+ | 34.14 грн |
| 500+ | 25.33 грн |
| 1000+ | 20.26 грн |
| QS6Z5TR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
на замовлення 3070 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.21 грн |
| 10+ | 52.20 грн |
| 100+ | 34.51 грн |
| 500+ | 25.25 грн |
| 1000+ | 22.96 грн |
| QS8K13TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 2592 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.36 грн |
| 10+ | 82.42 грн |
| 100+ | 55.51 грн |
| 500+ | 41.26 грн |
| 1000+ | 37.78 грн |
| RB050L-40DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Not For New Designs
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 3A PMDS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Not For New Designs
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 1406 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.45 грн |
| 10+ | 42.11 грн |
| 100+ | 28.11 грн |
| 500+ | 20.40 грн |
| RB050L-60DDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 3A PMDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 3277 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.70 грн |
| 10+ | 41.58 грн |
| 100+ | 28.77 грн |
| 500+ | 22.56 грн |




































