Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102219) > Сторінка 760 з 1704
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DTA013ZEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.15W SC89Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA013ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.2W SC85 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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DTC013ZEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3FPackaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTC013ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.15W VMT3 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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DTC013ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTC024XMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.15W VMT3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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DTC024XUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 0.2W UMT3F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EDZVFHT2R12B | Rohm Semiconductor |
Description: DIODE ZENER 12V 150MW EMD2Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 9 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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EMB51T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EMB61T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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EMB75T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD53T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD59T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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EMD62T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EMH59T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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EMH60T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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EMH61T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EMH75T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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EMT51T2R | Rohm Semiconductor |
Description: TRANS 2PNP 20V 0.2A 6EMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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EMX52T2R | Rohm Semiconductor |
Description: TRANS 2NPN 50V 0.1A EMT6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 350MHz Supplier Device Package: EMT6 Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMZ51T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A EMT6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 400MHz, 350MHz Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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LM4559FVT-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 3.3mA Slew Rate: 3.5V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-TSSOP-B Part Status: Active Number of Circuits: 2 Voltage - Supply Span (Min): 8 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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LM4565FVM-GTR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 4.5mA Slew Rate: 5V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 70 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 160 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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LMR341G-GTR | Rohm Semiconductor |
Description: IC CMOS 1 CIRCUIT 6SSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 80µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 6-SSOP Number of Circuits: 1 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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LMR342F-GE2 | Rohm Semiconductor |
Description: IC CMOS 2 CIRCUIT 8SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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LMR342FVM-GTR | Rohm Semiconductor |
Description: IC OP AMP GROUND SENSE 8MSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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LMR344F-GE2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 400µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 113 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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LMR344FJ-GE2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14SOPJPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 400µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 14-SOPJ Number of Circuits: 4 Current - Output / Channel: 113 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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LMR344FVJ-E2 | Rohm Semiconductor |
Description: IC CMOS 4 CIRCUIT 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 400µA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 250 µV Supplier Device Package: 14-TSSOP-BJ Number of Circuits: 4 Current - Output / Channel: 113 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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LMR822F-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 650µA Slew Rate: 2V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOP Number of Circuits: 2 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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LMR822FV-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 8SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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LMR824F-GE2 | Rohm Semiconductor |
Description: IC OPAMP GP 4 CIRCUIT 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 1.13mA Slew Rate: 2V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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LMR824FJ-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING SOP14J |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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LMR824FVJ-E2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 14TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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LMR932FVJ-GE2 | Rohm Semiconductor |
Description: IC OP AMP FULL SWING 8TSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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LMR932FVM-GTR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 140µA Slew Rate: 0.35V/µs Gain Bandwidth Product: 1.4 MHz Current - Input Bias: 5 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-MSOP Number of Circuits: 2 Current - Output / Channel: 90 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QH8MA3TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QH8MA4TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 9A/8A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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QS5W1TR | Rohm Semiconductor |
Description: TRANS 2NPN 30V 3A TSMT5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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QS5W2TR | Rohm Semiconductor |
Description: TRANS 2NPN 50V 3A TSMT5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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QS5Y1TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 30V 3A TSMT5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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QS6Z5TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 1A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 1.25W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz, 400MHz Supplier Device Package: TSMT6 (SC-95) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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QS8K13TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 6A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RB050L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDSPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RB050L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDSPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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RB055L-30DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 3A PMDSPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
RB055L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDSPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
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RB058L150TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 3A PMDSPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 150 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
RB058L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDSPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
RB058L-60DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDSPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Current - Reverse Leakage @ Vr: 4 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
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RB060L-40DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDSPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDS Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
RB060M-40DDTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
RB060M-60DDTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 2A PMDU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
RB068L100DDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 2A PMDSPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
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RB068L150TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 2A PMDS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
RB068L-40TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDS |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
|
RB078BM30STL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 5A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
RB085BM-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
RB085BM-60TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
RB085BM-90TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. |
| DTA013ZEBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.15W SC89
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 0.15W SC89
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.82 грн |
| DTA013ZUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.2W SC85
Description: TRANS PREBIAS PNP 0.2W SC85
товару немає в наявності
В кошику
од. на суму грн.
| DTC013ZEBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.17 грн |
| 6000+ | 2.73 грн |
| DTC013ZMT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
Description: TRANS PREBIAS NPN 0.15W VMT3
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTC013ZUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.58 грн |
| 6000+ | 3.09 грн |
| DTC024XMT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
Description: TRANS PREBIAS NPN 0.15W VMT3
товару немає в наявності
В кошику
од. на суму грн.
| DTC024XUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.2W UMT3F
Description: TRANS PREBIAS NPN 0.2W UMT3F
товару немає в наявності
В кошику
од. на суму грн.
| EDZVFHT2R12B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 12V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 12V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 2.76 грн |
| 16000+ | 2.55 грн |
| EMB51T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
товару немає в наявності
В кошику
од. на суму грн.
| EMB61T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EMB75T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 6.03 грн |
| EMD53T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 6.03 грн |
| EMD59T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 6.03 грн |
| 16000+ | 5.02 грн |
| EMD62T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| EMH59T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EMH60T2R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 6.03 грн |
| 16000+ | 5.02 грн |
| 24000+ | 4.93 грн |
| EMH61T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
товару немає в наявності
В кошику
од. на суму грн.
| EMH75T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Description: TRANS 2NPN PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EMT51T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP 20V 0.2A 6EMT
Description: TRANS 2PNP 20V 0.2A 6EMT
товару немає в наявності
В кошику
од. на суму грн.
| EMX52T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.1A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: EMT6
Part Status: Active
Description: TRANS 2NPN 50V 0.1A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: EMT6
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 6.09 грн |
| EMZ51T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 400MHz, 350MHz
Supplier Device Package: EMT6
Description: TRANS NPN/PNP 20V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 400MHz, 350MHz
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 6.03 грн |
| LM4559FVT-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
товару немає в наявності
В кошику
од. на суму грн.
| LM4565FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
товару немає в наявності
В кошику
од. на суму грн.
| LMR341G-GTR |
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Виробник: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 6SSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 80µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 6-SSOP
Number of Circuits: 1
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 1 CIRCUIT 6SSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 80µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 6-SSOP
Number of Circuits: 1
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
В кошику
од. на суму грн.
| LMR342F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC CMOS 2 CIRCUIT 8SOP
Description: IC CMOS 2 CIRCUIT 8SOP
товару немає в наявності
В кошику
од. на суму грн.
| LMR342FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC OP AMP GROUND SENSE 8MSOP
Description: IC OP AMP GROUND SENSE 8MSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LMR344F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 39.70 грн |
| LMR344FJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOPJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 4 CIRCUIT 14SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOPJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 47.75 грн |
| LMR344FVJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
В кошику
од. на суму грн.
| LMR822F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
В кошику
од. на суму грн.
| LMR822FV-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8SSOP
Description: IC OP AMP FULL SWING 8SSOP
товару немає в наявності
В кошику
од. на суму грн.
| LMR824F-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.13mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.13mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 38.61 грн |
| LMR824FJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING SOP14J
Description: IC OP AMP FULL SWING SOP14J
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LMR824FVJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 14TSSOP
Description: IC OP AMP FULL SWING 14TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| LMR932FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8TSSOP
Description: IC OP AMP FULL SWING 8TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LMR932FVM-GTR |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 140µA
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 5 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 140µA
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 5 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.31 грн |
| QH8MA3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 22.44 грн |
| QH8MA4TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 30V 9A/8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| QS5W1TR |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 30V 3A TSMT5
Description: TRANS 2NPN 30V 3A TSMT5
товару немає в наявності
В кошику
од. на суму грн.
| QS5W2TR |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 3A TSMT5
Description: TRANS 2NPN 50V 3A TSMT5
товару немає в наявності
В кошику
од. на суму грн.
| QS5Y1TR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 3A TSMT5
Description: TRANS NPN/PNP 30V 3A TSMT5
товару немає в наявності
В кошику
од. на суму грн.
| QS6Z5TR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
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| QS8K13TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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| RB050L-40DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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| RB050L-60DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 22.97 грн |
| RB055L-30DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
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| RB055L-60DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 12.91 грн |
| RB058L150TE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Qualification: AEC-Q101
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| RB058L-40DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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| RB058L-60DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 19.14 грн |
| 3000+ | 16.41 грн |
| RB060L-40DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 2A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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| RB060M-40DDTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDU
Description: DIODE SCHOTTKY 40V 2A PMDU
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| RB060M-60DDTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDU
Description: DIODE SCHOTTKY 60V 2A PMDU
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| RB068L100DDTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 23.02 грн |
| 3000+ | 18.56 грн |
| RB068L150TE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDS
Description: DIODE SCHOTTKY 150V 2A PMDS
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| RB068L-40TE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Description: DIODE SCHOTTKY 40V 2A PMDS
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB078BM30STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252
Description: DIODE SCHOTTKY 30V 5A TO252
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| RB085BM-30TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
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| RB085BM-60TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
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| RB085BM-90TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARRAY SCHOTT 90V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
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