Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105092) > Сторінка 762 з 1752
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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2SCR553P5T100 | Rohm Semiconductor |
Description: TRANS NPN 50V 2A MPT3Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 360MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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2SCR554P5T100 | Rohm Semiconductor |
Description: TRANS NPN 80V 1.5A MPT3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 300MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BM6204FS-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM6204 Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: BM6204 |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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BM6205FS-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM6205 Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: BM6205 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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BM6206FS-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM6206 Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: BM6206 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BM6207FS-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM6207Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: BM6207 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BM6209FS-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM6209Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: BM6209 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SCR293P5T100 | Rohm Semiconductor |
Description: TRANS NPN 30V 1A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: MPT3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
на замовлення 4602 шт: термін постачання 21-31 дні (днів) |
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2SCR372P5T100R | Rohm Semiconductor |
Description: TRANS NPN 120V 0.7A MPT3Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 700 mA Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 220MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SCR372P5T100Q | Rohm Semiconductor |
Description: TRANS NPN 120V 0.7A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 220MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
на замовлення 892 шт: термін постачання 21-31 дні (днів) |
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2SCR375P5T100R | Rohm Semiconductor |
Description: TRANS NPN 120V 1.5A MPT3 |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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2SCR375P5T100Q | Rohm Semiconductor |
Description: TRANS NPN 120V 1.5A MPT3 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SCR512P5T100 | Rohm Semiconductor |
Description: TRANS NPN 30V 2A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 580 шт: термін постачання 21-31 дні (днів) |
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2SCR513P5T100 | Rohm Semiconductor |
Description: TRANS NPN 50V 1A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
на замовлення 3055 шт: термін постачання 21-31 дні (днів) |
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2SCR514P5T100 | Rohm Semiconductor |
Description: TRANS NPN 80V 0.7A MPT3Current - Collector (Ic) (Max): 700 mA Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 80 V |
на замовлення 1380 шт: термін постачання 21-31 дні (днів) |
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2SCR533P5T100 | Rohm Semiconductor |
Description: TRANS NPN 50V 3A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 603 шт: термін постачання 21-31 дні (днів) |
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2SCR544P5T100 | Rohm Semiconductor |
Description: TRANS NPN 80V 2.5A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 2.5 A Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 280MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 939 шт: термін постачання 21-31 дні (днів) |
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2SCR552P5T100 | Rohm Semiconductor |
Description: TRANS NPN 30V 3A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 280MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 128344 шт: термін постачання 21-31 дні (днів) |
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2SCR553P5T100 | Rohm Semiconductor |
Description: TRANS NPN 50V 2A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 360MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 2018 шт: термін постачання 21-31 дні (днів) |
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2SCR554P5T100 | Rohm Semiconductor |
Description: TRANS NPN 80V 1.5A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 300MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
на замовлення 3435 шт: термін постачання 21-31 дні (днів) |
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SCT3022ALGC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 93A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Power Dissipation (Max): 339W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 |
на замовлення 1298 шт: термін постачання 21-31 дні (днів) |
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SCT3030ALGC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 70A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 |
на замовлення 8797 шт: термін постачання 21-31 дні (днів) |
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SCT3030KLGC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 72A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 339W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V |
на замовлення 265 шт: термін постачання 21-31 дні (днів) |
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SCT3040KLGC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 55A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 262W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 10mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800 |
на замовлення 459 шт: термін постачання 21-31 дні (днів) |
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SCT3060ALGC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 39A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 |
на замовлення 603 шт: термін постачання 21-31 дні (днів) |
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SCT3080KLGC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 31A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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SCT3120ALGC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 21A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V |
на замовлення 930 шт: термін постачання 21-31 дні (днів) |
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SCT3160KLGC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 17A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800 |
на замовлення 3719 шт: термін постачання 21-31 дні (днів) |
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FDZT40RB6.8 | Rohm Semiconductor |
Description: DIODE ZENER 6.8V 100MW SMD0402Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Supplier Device Package: SMD0402 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCT3080ALGC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 30A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 |
на замовлення 413 шт: термін постачання 21-31 дні (днів) |
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BD68610EFV-E2 | Rohm Semiconductor |
Description: IC MTR DRV BIPLR 19-28V 20HTSSOPFunction: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Packaging: Tape & Reel (TR) Step Resolution: 1, 1/2, 1/4 Motor Type - Stepper: Bipolar Supplier Device Package: 20-HTSSOP-B Voltage - Load: 19V ~ 28V Technology: DMOS Applications: General Purpose Voltage - Supply: 19V ~ 28V Output Configuration: Half Bridge (4) Operating Temperature: -25°C ~ 85°C (TA) Interface: Parallel Current - Output: 600mA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BD68610EFV-E2 | Rohm Semiconductor |
Description: IC MTR DRV BIPLR 19-28V 20HTSSOPOperating Temperature: -25°C ~ 85°C (TA) Interface: Parallel Current - Output: 600mA Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Packaging: Cut Tape (CT) Step Resolution: 1, 1/2, 1/4 Motor Type - Stepper: Bipolar Supplier Device Package: 20-HTSSOP-B Voltage - Load: 19V ~ 28V Technology: DMOS Applications: General Purpose Voltage - Supply: 19V ~ 28V Output Configuration: Half Bridge (4) |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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BD57020MWV-E2 | Rohm Semiconductor |
Description: IC WIRELESS PWR TX UQFN040V5050Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C Voltage - Supply: 5V Applications: Wireless Power Transmitter Supplier Device Package: UQFN040V5050 Part Status: Not For New Designs |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BD57015GWL-E2 | Rohm Semiconductor |
Description: IC WIRELESS PWR REC UCSP50L4CPackaging: Tape & Reel (TR) Package / Case: 63-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C Voltage - Supply: 0V ~ 17.4V Applications: Wireless Power Receiver Current - Supply: 44mA, 27mA Supplier Device Package: UCSP50L4C Part Status: Not For New Designs |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BD57020MWV-E2 | Rohm Semiconductor |
Description: IC WIRELESS PWR TX UQFN040V5050Packaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C Voltage - Supply: 5V Applications: Wireless Power Transmitter Supplier Device Package: UQFN040V5050 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD57015GWL-E2 | Rohm Semiconductor |
Description: IC WIRELESS PWR REC UCSP50L4CPart Status: Not For New Designs Supplier Device Package: UCSP50L4C Current - Supply: 44mA, 27mA Applications: Wireless Power Receiver Voltage - Supply: 0V ~ 17.4V Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: 63-UFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD71815AGW-E2 | Rohm Semiconductor |
Description: IC REG 13OUT BUCK/LDO 55UCSPPackaging: Tape & Reel (TR) Package / Case: 55-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.9V ~ 5.5V Frequency - Switching: 6MHz Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8) Supplier Device Package: UCSP55M4C Voltage/Current - Output 1: Programmable, 1A Voltage/Current - Output 2: Programmable, 800mA Voltage/Current - Output 3: Programmable, 500mA w/LED Driver: Yes w/Supervisor: No w/Sequencer: Yes Part Status: Active Number of Outputs: 13 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SCS205KGHRC | Rohm Semiconductor |
Description: DIODE SIL CARB 1200V 5A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 270pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SCS206AGHRC | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 6A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 219pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 120 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SCS208AGHRC | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 291pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A Current - Reverse Leakage @ Vr: 160 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SCS220AE2HRC | Rohm Semiconductor |
Description: DIODE ARRAY SIC 650V 10A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||
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SCS220AGHRC | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 20A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SCS220KE2HRC | Rohm Semiconductor |
Description: DIODE ARRAY SIC 650V 10A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||
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SCS220KGHRC | Rohm Semiconductor |
Description: DIODE SIL CARB 1200V 20A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1060pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SCS230AE2HRC | Rohm Semiconductor |
Description: DIODE ARR SIC SCHOT 650V TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||
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SCS240AE2HRC | Rohm Semiconductor |
Description: DIODE ARRAY SIC 650V 15A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||
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BD71815AGW-E2 | Rohm Semiconductor |
Description: IC REG 13OUT BUCK/LDO 55UCSPPackaging: Cut Tape (CT) Package / Case: 55-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.9V ~ 5.5V Frequency - Switching: 6MHz Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8) Supplier Device Package: UCSP55M4C Voltage/Current - Output 1: Programmable, 1A Voltage/Current - Output 2: Programmable, 800mA Voltage/Current - Output 3: Programmable, 500mA w/LED Driver: Yes w/Supervisor: No w/Sequencer: Yes Part Status: Active Number of Outputs: 13 |
на замовлення 8222 шт: термін постачання 21-31 дні (днів) |
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TFZVTR18B | Rohm Semiconductor |
Description: ZENER DIODE |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TFZVTR16B | Rohm Semiconductor |
Description: DIODE ZENER 16V 500MW SOD323HE |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TFZVTR13B | Rohm Semiconductor |
Description: ZENER DIODE |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TFZVTR2.0B | Rohm Semiconductor |
Description: ZENER DIODE |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TFZVTR36B | Rohm Semiconductor |
Description: DIODE ZENER 36V 500MW SOD323HETolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: TUMD2M Power - Max: 500 mW Current - Reverse Leakage @ Vr: 200 nA @ 27 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TFZVTR18B | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 3577 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR16B | Rohm Semiconductor |
Description: DIODE ZENER 16V 500MW SOD323HE |
на замовлення 237 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR13B | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 2944 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR2.0B | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 1877 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR36B | Rohm Semiconductor |
Description: DIODE ZENER 36V 500MW SOD323HETolerance: ±3% Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: TUMD2M Power - Max: 500 mW Current - Reverse Leakage @ Vr: 200 nA @ 27 V |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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BD8374HFP-MTR | Rohm Semiconductor |
Description: IC LED DRVR LIN PWM 500MA HRP7Packaging: Cut Tape (CT) Package / Case: HRP-7 (7 Leads + Tab) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100Hz ~ 5kHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: HRP7 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 42V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2188 шт: термін постачання 21-31 дні (днів) |
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BU90R104-E2 | Rohm Semiconductor |
Description: IC RX/DESERIALIZER LVDS 64TQFPPart Status: Active Supplier Device Package: 64-TQFP (10x10) Number of Inputs: 5 Input Type: LVDS Data Rate: 3.92Gbps Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Function: Deserializer Number of Outputs: 35 Mounting Type: Surface Mount Output Type: LVCMOS Package / Case: 64-LQFP Packaging: Cut Tape (CT) |
на замовлення 1770 шт: термін постачання 21-31 дні (днів) |
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BU9796AMUV-E2 | Rohm Semiconductor |
Description: IC DRVR 48 SEGMENT VQFN024V4040Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Display Type: LCD Mounting Type: Surface Mount Interface: 2-Wire Serial Configuration: 48 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V ~ 5.5V Supplier Device Package: VQFN024V4040 Part Status: Active Current - Supply: 12.5 µA |
на замовлення 35805 шт: термін постачання 21-31 дні (днів) |
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| 2SCR553P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Description: TRANS NPN 50V 2A MPT3
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 14.53 грн |
| 2SCR554P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS NPN 80V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 13.95 грн |
| 2000+ | 12.18 грн |
| BM6204FS-EVK-001 |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM6204
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6204
Description: EVAL BOARD FOR BM6204
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6204
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9474.80 грн |
| BM6205FS-EVK-001 |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM6205
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6205
Description: EVAL BOARD FOR BM6205
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6205
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9474.80 грн |
| BM6206FS-EVK-001 |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM6206
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6206
Description: EVAL BOARD FOR BM6206
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6206
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9474.80 грн |
| BM6207FS-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM6207
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6207
Description: EVAL BOARD FOR BM6207
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6207
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9474.80 грн |
| BM6209FS-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM6209
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6209
Description: EVAL BOARD FOR BM6209
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6209
товару немає в наявності
В кошику
од. на суму грн.
| 2SCR293P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS NPN 30V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 4602 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.87 грн |
| 15+ | 20.67 грн |
| 100+ | 13.14 грн |
| 500+ | 9.27 грн |
| 2SCR372P5T100R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Description: TRANS NPN 120V 0.7A MPT3
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| 2SCR372P5T100Q |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS NPN 120V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 892 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.42 грн |
| 10+ | 40.15 грн |
| 100+ | 26.21 грн |
| 500+ | 18.97 грн |
| 2SCR375P5T100R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 1.5A MPT3
Description: TRANS NPN 120V 1.5A MPT3
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.14 грн |
| 10+ | 42.09 грн |
| 100+ | 31.45 грн |
| 2SCR375P5T100Q |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 1.5A MPT3
Description: TRANS NPN 120V 1.5A MPT3
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| 2SCR512P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 2A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 30V 2A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.45 грн |
| 13+ | 23.95 грн |
| 100+ | 16.64 грн |
| 500+ | 12.19 грн |
| 2SCR513P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 3055 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.62 грн |
| 12+ | 25.22 грн |
| 100+ | 16.18 грн |
| 500+ | 11.50 грн |
| 2SCR514P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 0.7A MPT3
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Description: TRANS NPN 80V 0.7A MPT3
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.87 грн |
| 12+ | 25.97 грн |
| 100+ | 15.59 грн |
| 500+ | 13.55 грн |
| 2SCR533P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.55 грн |
| 12+ | 27.09 грн |
| 100+ | 18.81 грн |
| 500+ | 13.79 грн |
| 2SCR544P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 2.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 80V 2.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.99 грн |
| 10+ | 37.09 грн |
| 100+ | 24.07 грн |
| 500+ | 17.33 грн |
| 2SCR552P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 128344 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.22 грн |
| 10+ | 36.27 грн |
| 100+ | 23.50 грн |
| 500+ | 16.85 грн |
| 2SCR553P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 2A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 2018 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.47 грн |
| 10+ | 31.86 грн |
| 100+ | 20.48 грн |
| 500+ | 14.62 грн |
| 2SCR554P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS NPN 80V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 3435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.37 грн |
| 10+ | 30.37 грн |
| 100+ | 19.58 грн |
| 500+ | 14.02 грн |
| SCT3022ALGC11 |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Description: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 1298 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3053.14 грн |
| 30+ | 2440.37 грн |
| SCT3030ALGC11 |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 8797 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1824.13 грн |
| 30+ | 1375.24 грн |
| SCT3030KLGC11 |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 72A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
Description: SICFET N-CH 1200V 72A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4313.14 грн |
| 30+ | 4152.52 грн |
| SCT3040KLGC11 |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
Description: SICFET N-CH 1200V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
на замовлення 459 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2392.14 грн |
| 30+ | 1809.63 грн |
| SCT3060ALGC11 |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 39A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Description: SICFET N-CH 650V 39A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1008.93 грн |
| 30+ | 523.37 грн |
| 120+ | 514.14 грн |
| 510+ | 477.51 грн |
| SCT3080KLGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1587.79 грн |
| 30+ | 970.19 грн |
| 120+ | 848.00 грн |
| SCT3120ALGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Description: SICFET N-CH 650V 21A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 592.80 грн |
| 30+ | 316.44 грн |
| 120+ | 311.80 грн |
| 510+ | 271.72 грн |
| SCT3160KLGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 17A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
Description: SICFET N-CH 1200V 17A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
на замовлення 3719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 803.58 грн |
| 30+ | 461.70 грн |
| 120+ | 393.25 грн |
| 510+ | 322.17 грн |
| FDZT40RB6.8 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Description: DIODE ZENER 6.8V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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| SCT3080ALGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Description: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 413 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 888.04 грн |
| 30+ | 515.98 грн |
| 120+ | 441.64 грн |
| BD68610EFV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 600mA
Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 600mA
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| BD68610EFV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Operating Temperature: -25°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 600mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Operating Temperature: -25°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 600mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.56 грн |
| 10+ | 83.87 грн |
| 25+ | 76.26 грн |
| 100+ | 63.75 грн |
| BD57020MWV-E2 |
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Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
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Мінімальне замовлення: 2500 шт
В кошику
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| BD57015GWL-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR REC UCSP50L4C
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 0V ~ 17.4V
Applications: Wireless Power Receiver
Current - Supply: 44mA, 27mA
Supplier Device Package: UCSP50L4C
Part Status: Not For New Designs
Description: IC WIRELESS PWR REC UCSP50L4C
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 0V ~ 17.4V
Applications: Wireless Power Receiver
Current - Supply: 44mA, 27mA
Supplier Device Package: UCSP50L4C
Part Status: Not For New Designs
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Мінімальне замовлення: 2500 шт
В кошику
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| BD57020MWV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
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| BD57015GWL-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR REC UCSP50L4C
Part Status: Not For New Designs
Supplier Device Package: UCSP50L4C
Current - Supply: 44mA, 27mA
Applications: Wireless Power Receiver
Voltage - Supply: 0V ~ 17.4V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 63-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC WIRELESS PWR REC UCSP50L4C
Part Status: Not For New Designs
Supplier Device Package: UCSP50L4C
Current - Supply: 44mA, 27mA
Applications: Wireless Power Receiver
Voltage - Supply: 0V ~ 17.4V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 63-UFBGA, WLCSP
Packaging: Cut Tape (CT)
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| BD71815AGW-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Tape & Reel (TR)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Tape & Reel (TR)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 182.34 грн |
| SCS205KGHRC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| SCS206AGHRC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| SCS208AGHRC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| SCS220AE2HRC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| SCS220AGHRC |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SCS220KE2HRC |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| SCS220KGHRC |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SCS230AE2HRC |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| SCS240AE2HRC |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE ARRAY SIC 650V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| BD71815AGW-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Cut Tape (CT)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Cut Tape (CT)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
на замовлення 8222 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 330.11 грн |
| 10+ | 241.77 грн |
| 25+ | 222.73 грн |
| 100+ | 189.36 грн |
| 250+ | 180.31 грн |
| TFZVTR18B |
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Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TFZVTR16B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW SOD323HE
Description: DIODE ZENER 16V 500MW SOD323HE
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TFZVTR13B |
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Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TFZVTR2.0B |
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Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TFZVTR36B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TFZVTR18B |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 3577 шт:
термін постачання 21-31 дні (днів)
| TFZVTR16B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW SOD323HE
Description: DIODE ZENER 16V 500MW SOD323HE
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
| TFZVTR13B |
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Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 2944 шт:
термін постачання 21-31 дні (днів)
| TFZVTR2.0B |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 1877 шт:
термін постачання 21-31 дні (днів)
| TFZVTR36B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.57 грн |
| 18+ | 17.24 грн |
| 100+ | 8.70 грн |
| 500+ | 6.66 грн |
| 1000+ | 4.94 грн |
| BD8374HFP-MTR |
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Виробник: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2188 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.02 грн |
| 10+ | 169.61 грн |
| 25+ | 155.66 грн |
| 100+ | 131.69 грн |
| 250+ | 124.83 грн |
| 500+ | 120.69 грн |
| 1000+ | 115.36 грн |
| BU90R104-E2 |
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Виробник: Rohm Semiconductor
Description: IC RX/DESERIALIZER LVDS 64TQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
Number of Inputs: 5
Input Type: LVDS
Data Rate: 3.92Gbps
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 35
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
Description: IC RX/DESERIALIZER LVDS 64TQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
Number of Inputs: 5
Input Type: LVDS
Data Rate: 3.92Gbps
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 35
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 474.24 грн |
| 10+ | 352.43 грн |
| 25+ | 326.33 грн |
| 100+ | 279.33 грн |
| 250+ | 266.50 грн |
| 500+ | 258.77 грн |
| BU9796AMUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC DRVR 48 SEGMENT VQFN024V4040
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 48 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: VQFN024V4040
Part Status: Active
Current - Supply: 12.5 µA
Description: IC DRVR 48 SEGMENT VQFN024V4040
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 48 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: VQFN024V4040
Part Status: Active
Current - Supply: 12.5 µA
на замовлення 35805 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.96 грн |
| 10+ | 70.29 грн |
| 25+ | 63.85 грн |
| 100+ | 53.21 грн |
| 250+ | 50.01 грн |
| 500+ | 48.09 грн |
| 1000+ | 45.74 грн |




















