Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (106411) > Сторінка 763 з 1774
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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BR24A01AF-WME2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPSupplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 1Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 128 x 8 |
на замовлення 1081 шт: термін постачання 21-31 дні (днів) |
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BR24A02F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPMemory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 2Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 256 x 8 |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR24A04F-WME2 | Rohm Semiconductor |
Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8 |
на замовлення 2395 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DAP222WMFHTL | Rohm Semiconductor |
Description: SWITCHING DIODES (CORRESPONDS TO |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DAN222MFHT2L | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA VMD3Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: VMD3 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Cathode Technology: Standard Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6939 шт: термін постачання 21-31 дні (днів) |
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RSL020P03FRATR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TUMT6Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 7403 шт: термін постачання 21-31 дні (днів) |
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DAP222MFHT2L | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA VMD3Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: VMD3 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3845 шт: термін постачання 21-31 дні (днів) |
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RFN10BM6SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 600V 10A TO252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2504 шт: термін постачання 21-31 дні (днів) |
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RFN10NS6SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 600V 10A LPDSCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 169pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 860 шт: термін постачання 21-31 дні (днів) |
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RHU003N03FRAT106 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 300MA UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: UMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 823 шт: термін постачання 21-31 дні (днів) |
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SP8M24FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 4.5A 8SOPTechnology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Not For New Designs Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 45V Power - Max: 2W Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M5FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 6A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M6FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 5A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB095BM-40FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 6A TO252Qualification: AEC-Q101 Grade: Automotive Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 11.4 ns |
на замовлення 251 шт: термін постачання 21-31 дні (днів) |
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RJ1U330AAFRGTL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 33A LPTSInput Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 970 шт: термін постачання 21-31 дні (днів) |
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SP8K32FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 4.5A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K33FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 5A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K52FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 3A 8SOPQualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Part Status: Not For New Designs |
на замовлення 2460 шт: термін постачання 21-31 дні (днів) |
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SP8M21FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 6A 8SOPGate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Drain to Source Voltage (Vdss): 45V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RJK005N03FRAT146 | Rohm Semiconductor |
Description: 2.5V DRIVE NCH MOSFET (AEC-Q101 |
на замовлення 3878 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RSS070P05FRATB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 7A 8SOP |
на замовлення 1820 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RSS100N03FRATB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1850 шт: термін постачання 21-31 дні (днів) |
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BD90C0AWFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 9V 1A TO252-5Qualification: AEC-Q100 Grade: Automotive Voltage - Input (Max): 26.5V Current - Quiescent (Iq): 2.5 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 1A Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Cut Tape (CT) Supplier Device Package: TO-252-5 Number of Regulators: 1 Part Status: Active Current - Supply (Max): 2.5 mA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.5V @ 500mA PSRR: 50dB (120Hz) Control Features: Enable Voltage - Output (Min/Fixed): 9V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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BR24A01AFJ-WME2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ |
на замовлення 2293 шт: термін постачання 21-31 дні (днів) |
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BR25H640F-2ACE2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOPQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 8K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Grade: Automotive Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 957 шт: термін постачання 21-31 дні (днів) |
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DAN217UMFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3FQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 200 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RB085BM-90FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 90V 10A TO252Qualification: AEC-Q101 Grade: Automotive Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 150 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 7.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
на замовлення 2313 шт: термін постачання 21-31 дні (днів) |
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RB168VYM150FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 1A TUMD2MPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.8 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 19328 шт: термін постачання 21-31 дні (днів) |
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RB218NS150FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 150V 20A LPDSOperating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 14.8 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 20 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active |
на замовлення 11744 шт: термін постачання 21-31 дні (днів) |
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RR601BM4SFHTL | Rohm Semiconductor |
Description: RECTIFYING DIODE (AEC-Q101 QUALI |
на замовлення 1229 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RUC002N05HZGT116 | Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 41715 шт: термін постачання 21-31 дні (днів) |
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RUF025N02FRATL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 2.5A TUMT3Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TUMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2743 шт: термін постачання 21-31 дні (днів) |
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SP8K22FRATB | Rohm Semiconductor |
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP |
на замовлення 2442 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K24FRATB | Rohm Semiconductor |
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP |
на замовлення 2349 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K31FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 3.5A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DAN202UMFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3FSupplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 150°C (Max) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1033 шт: термін постачання 21-31 дні (днів) |
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RF2001NS2DFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 20A LPDSReverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Standard Qualification: AEC-Q101 Grade: Automotive |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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RB050LAM-60TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDTMPackage / Case: SOD-128 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 26.35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
на замовлення 22819 шт: термін постачання 21-31 дні (днів) |
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RB085BM-40FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 10A TO252Current - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Qualification: AEC-Q101 Grade: Automotive Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 12.3 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 6381 шт: термін постачання 21-31 дні (днів) |
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RB160VYM-60FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 1A TUMD2MQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 40 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 6.65 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ20BM45AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 20A TO252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 200 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2081 шт: термін постачання 21-31 дні (днів) |
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RBQ30NS45AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 45V 30A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 45 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 647 шт: термін постачання 21-31 дні (днів) |
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RF501BM2SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 5A TO252Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 5A Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Technology: Standard |
на замовлення 4666 шт: термін постачання 21-31 дні (днів) |
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RK7002BMHZGT116 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 66449 шт: термін постачання 21-31 дні (днів) |
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RRL025P03FRATR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2.5A TUMT6Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 |
на замовлення 815 шт: термін постачання 21-31 дні (днів) |
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SP8M51FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A 8SOPConfiguration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UM6K31NFHATCN | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 0.25A UMT6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: UMT6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2910 шт: термін постачання 21-31 дні (днів) |
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RB238NS100FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 40A LPDSCurrent - Reverse Leakage @ Vr: 20 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 40A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 24.7 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ30NS65AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 65V 30A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 450 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 16.1 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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BD83733HFP-MTR | Rohm Semiconductor |
Description: IC LED DRVR LIN PWM 500MA HRP7Packaging: Cut Tape (CT) Package / Case: HRP-7 (7 Leads + Tab) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100Hz ~ 5kHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: HRP7 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 42V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1835 шт: термін постачання 21-31 дні (днів) |
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BR24A02FJ-WME2 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 256 x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 2Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 324 шт: термін постачання 21-31 дні (днів) |
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BR24A08F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOPDigiKey Programmable: Not Verified Memory Organization: 1K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 8Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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BR24A16F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOPQualification: AEC-Q100 Grade: Automotive Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Memory Organization: 2K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM |
на замовлення 621 шт: термін постачання 21-31 дні (днів) |
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BR24A32F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOPDigiKey Programmable: Not Verified Memory Organization: 4K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 4919 шт: термін постачання 21-31 дні (днів) |
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BR25H640FVT-2ACE2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT SPI 8TSSOPBGrade: Automotive Supplier Device Package: 8-TSSOP-B Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 8K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RB558VYM150FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 500MA TUMD2MQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 500mA Technology: Schottky Reverse Recovery Time (trr): 6.35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 15354 шт: термін постачання 21-31 дні (днів) |
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BAS40-06HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 40V 120MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1423 шт: термін постачання 21-31 дні (днів) |
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BAS40HMFHT116 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 120MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 120mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54AHMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 30V 200MA SSD3 |
на замовлення 1431 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54HMFHT116 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 200MA SSD3Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SSD3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 12pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. |
| BR24A01AF-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOP
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 128 x 8
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOP
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 128 x 8
на замовлення 1081 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 10+ | 35.10 грн |
| 25+ | 34.24 грн |
| 50+ | 31.45 грн |
| 100+ | 30.76 грн |
| 250+ | 29.85 грн |
| 500+ | 28.68 грн |
| 1000+ | 28.00 грн |
| BR24A02F-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOP
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOP
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| BR24A04F-WME2 |
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Виробник: Rohm Semiconductor
Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8
Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8
на замовлення 2395 шт:
термін постачання 21-31 дні (днів)
| DAP222WMFHTL |
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Виробник: Rohm Semiconductor
Description: SWITCHING DIODES (CORRESPONDS TO
Description: SWITCHING DIODES (CORRESPONDS TO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| DAN222MFHT2L |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA VMD3
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 80V 100MA VMD3
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.16 грн |
| 25+ | 12.23 грн |
| 100+ | 7.65 грн |
| 500+ | 5.29 грн |
| 1000+ | 4.68 грн |
| 2000+ | 4.16 грн |
| RSL020P03FRATR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TUMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 2A TUMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 7403 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 10+ | 33.21 грн |
| 100+ | 22.76 грн |
| 500+ | 18.15 грн |
| 1000+ | 16.39 грн |
| DAP222MFHT2L |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA VMD3
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 80V 100MA VMD3
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3845 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.43 грн |
| 19+ | 16.15 грн |
| 100+ | 10.14 грн |
| 500+ | 7.07 грн |
| 1000+ | 6.28 грн |
| 2000+ | 5.61 грн |
| RFN10BM6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 600V 10A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2504 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.71 грн |
| 10+ | 91.93 грн |
| 100+ | 63.36 грн |
| 500+ | 47.25 грн |
| 1000+ | 43.32 грн |
| RFN10NS6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 169pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STANDARD 600V 10A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 169pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.14 грн |
| 10+ | 97.07 грн |
| 100+ | 66.04 грн |
| 500+ | 49.33 грн |
| RHU003N03FRAT106 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Qualification: AEC-Q101
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.38 грн |
| 26+ | 11.93 грн |
| 100+ | 7.47 грн |
| 500+ | 5.18 грн |
| SP8M24FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W
Qualification: AEC-Q101
Grade: Automotive
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| SP8M5FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 6A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| SP8M6FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| RB095BM-40FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
на замовлення 251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.98 грн |
| 10+ | 57.29 грн |
| 100+ | 39.66 грн |
| RJ1U330AAFRGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 250V 33A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 369.96 грн |
| 10+ | 236.10 грн |
| 100+ | 168.29 грн |
| 500+ | 140.02 грн |
| SP8K32FRATB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| SP8K33FRATB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| SP8K52FRATB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 3A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Part Status: Not For New Designs
Description: MOSFET 2N-CH 100V 3A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Part Status: Not For New Designs
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.68 грн |
| 10+ | 57.97 грн |
| 100+ | 45.07 грн |
| 500+ | 35.85 грн |
| 1000+ | 29.20 грн |
| SP8M21FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Description: MOSFET N/P-CH 45V 6A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
товару немає в наявності
В кошику
од. на суму грн.
| RJK005N03FRAT146 |
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Виробник: Rohm Semiconductor
Description: 2.5V DRIVE NCH MOSFET (AEC-Q101
Description: 2.5V DRIVE NCH MOSFET (AEC-Q101
на замовлення 3878 шт:
термін постачання 21-31 дні (днів)
| RSS070P05FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Description: MOSFET P-CH 45V 7A 8SOP
на замовлення 1820 шт:
термін постачання 21-31 дні (днів)
| RSS100N03FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.03 грн |
| 10+ | 63.55 грн |
| 50+ | 47.46 грн |
| 100+ | 39.64 грн |
| 500+ | 31.04 грн |
| BD90C0AWFP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 9V 1A TO252-5
Qualification: AEC-Q100
Grade: Automotive
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252-5
Number of Regulators: 1
Part Status: Active
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 50dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 9V
Description: IC REG LINEAR 9V 1A TO252-5
Qualification: AEC-Q100
Grade: Automotive
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252-5
Number of Regulators: 1
Part Status: Active
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 50dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 9V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.57 грн |
| 10+ | 100.69 грн |
| BR24A01AFJ-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ
на замовлення 2293 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.68 грн |
| 10+ | 42.34 грн |
| 25+ | 39.34 грн |
| 50+ | 36.73 грн |
| 100+ | 32.62 грн |
| 250+ | 32.21 грн |
| 500+ | 31.20 грн |
| 1000+ | 30.37 грн |
| BR25H640F-2ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 957 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.95 грн |
| 10+ | 95.10 грн |
| 25+ | 92.51 грн |
| 50+ | 86.36 грн |
| 100+ | 77.21 грн |
| 250+ | 76.98 грн |
| 500+ | 74.58 грн |
| DAN217UMFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA UMD3F
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| RB085BM-90FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 10A TO252
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 7.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: DIODE ARR SCHOTT 90V 10A TO252
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 7.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.41 грн |
| 10+ | 94.88 грн |
| 100+ | 64.43 грн |
| 500+ | 48.19 грн |
| 1000+ | 44.23 грн |
| RB168VYM150FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.8 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.8 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 19328 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.08 грн |
| 10+ | 33.36 грн |
| 100+ | 21.99 грн |
| 500+ | 15.79 грн |
| 1000+ | 14.23 грн |
| RB218NS150FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 150V 20A LPDS
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 14.8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Description: DIODE ARR SCHOTT 150V 20A LPDS
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 14.8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
на замовлення 11744 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.52 грн |
| 10+ | 88.76 грн |
| 100+ | 70.64 грн |
| 500+ | 56.09 грн |
| RR601BM4SFHTL |
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Виробник: Rohm Semiconductor
Description: RECTIFYING DIODE (AEC-Q101 QUALI
Description: RECTIFYING DIODE (AEC-Q101 QUALI
на замовлення 1229 шт:
термін постачання 21-31 дні (днів)
| RUC002N05HZGT116 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 41715 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.46 грн |
| 32+ | 9.43 грн |
| 50+ | 6.72 грн |
| 100+ | 5.47 грн |
| 500+ | 4.00 грн |
| RUF025N02FRATL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2743 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.89 грн |
| 12+ | 26.19 грн |
| 100+ | 16.79 грн |
| 500+ | 11.94 грн |
| 1000+ | 10.71 грн |
| SP8K22FRATB |
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Виробник: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
на замовлення 2442 шт:
термін постачання 21-31 дні (днів)
| SP8K24FRATB |
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Виробник: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
на замовлення 2349 шт:
термін постачання 21-31 дні (днів)
| SP8K31FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| DAN202UMFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 80V 100MA UMD3F
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.24 грн |
| 30+ | 10.27 грн |
| 100+ | 6.39 грн |
| 500+ | 4.40 грн |
| 1000+ | 3.88 грн |
| RF2001NS2DFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 20A LPDS
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 200V 20A LPDS
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.90 грн |
| 10+ | 154.88 грн |
| 100+ | 107.63 грн |
| RB050LAM-60TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 26.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 60V 3A PMDTM
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 26.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
на замовлення 22819 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.60 грн |
| 10+ | 46.95 грн |
| 50+ | 34.61 грн |
| 100+ | 28.75 грн |
| 500+ | 22.17 грн |
| RB085BM-40FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 10A TO252
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 12.3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 40V 10A TO252
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 12.3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 6381 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.90 грн |
| 10+ | 80.23 грн |
| 100+ | 54.02 грн |
| 500+ | 40.11 грн |
| 1000+ | 36.71 грн |
| RB160VYM-60FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 6.65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 1A TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 6.65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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| RBQ20BM45AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 20A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 45V 20A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2081 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.14 грн |
| 10+ | 70.87 грн |
| 100+ | 55.14 грн |
| 500+ | 43.86 грн |
| 1000+ | 35.73 грн |
| RBQ30NS45AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 45V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 45V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.33 грн |
| 10+ | 98.12 грн |
| 100+ | 66.93 грн |
| 500+ | 50.26 грн |
| RF501BM2SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Description: DIODE GEN PURP 200V 5A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
на замовлення 4666 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.87 грн |
| 10+ | 66.35 грн |
| 100+ | 51.59 грн |
| 500+ | 41.04 грн |
| 1000+ | 33.43 грн |
| RK7002BMHZGT116 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 66449 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.89 грн |
| 36+ | 8.53 грн |
| 50+ | 6.08 грн |
| 100+ | 4.95 грн |
| 500+ | 3.61 грн |
| RRL025P03FRATR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TUMT6
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2.5A TUMT6
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
на замовлення 815 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.43 грн |
| 10+ | 33.59 грн |
| 100+ | 21.65 грн |
| 500+ | 15.47 грн |
| SP8M51FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N/P-CH 100V 3A 8SOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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| UM6K31NFHATCN |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.25A UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2910 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.27 грн |
| 15+ | 20.53 грн |
| 50+ | 14.88 грн |
| 100+ | 12.23 грн |
| 500+ | 9.17 грн |
| RB238NS100FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 40A LPDS
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 24.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOTT 100V 40A LPDS
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 24.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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од. на суму грн.
| RBQ30NS65AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 16.1 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 65V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 16.1 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.33 грн |
| 10+ | 80.84 грн |
| 100+ | 56.19 грн |
| 500+ | 41.88 грн |
| BD83733HFP-MTR |
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Виробник: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1835 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 193.60 грн |
| 10+ | 139.26 грн |
| 25+ | 127.53 грн |
| 100+ | 107.50 грн |
| 250+ | 101.70 грн |
| 500+ | 98.21 грн |
| 1000+ | 93.77 грн |
| BR24A02FJ-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.38 грн |
| 10+ | 43.32 грн |
| 25+ | 42.84 грн |
| 50+ | 39.96 грн |
| 100+ | 35.74 грн |
| 250+ | 35.43 грн |
| BR24A08F-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 1K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 1K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.71 грн |
| 10+ | 54.80 грн |
| 25+ | 54.16 грн |
| 50+ | 50.50 грн |
| 100+ | 45.16 грн |
| 250+ | 44.78 грн |
| 500+ | 43.40 грн |
| BR24A16F-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
на замовлення 621 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 61.82 грн |
| 25+ | 60.08 грн |
| 50+ | 55.15 грн |
| 100+ | 53.91 грн |
| 250+ | 52.27 грн |
| 500+ | 50.20 грн |
| BR24A32F-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 4919 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.41 грн |
| 10+ | 113.29 грн |
| 25+ | 110.08 грн |
| 50+ | 100.98 грн |
| 100+ | 98.66 грн |
| 250+ | 95.60 грн |
| 500+ | 91.77 грн |
| 1000+ | 89.51 грн |
| BR25H640FVT-2ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT SPI 8TSSOPB
Grade: Automotive
Supplier Device Package: 8-TSSOP-B
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 64KBIT SPI 8TSSOPB
Grade: Automotive
Supplier Device Package: 8-TSSOP-B
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.95 грн |
| 10+ | 95.48 грн |
| 25+ | 92.93 грн |
| 50+ | 86.77 грн |
| 100+ | 77.56 грн |
| 250+ | 77.33 грн |
| 500+ | 74.92 грн |
| 1000+ | 71.74 грн |
| RB558VYM150FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 500MA TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Technology: Schottky
Reverse Recovery Time (trr): 6.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 150V 500MA TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Technology: Schottky
Reverse Recovery Time (trr): 6.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 15354 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 14+ | 23.02 грн |
| 100+ | 14.66 грн |
| 500+ | 10.34 грн |
| 1000+ | 9.23 грн |
| BAS40-06HMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1423 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.76 грн |
| 44+ | 6.94 грн |
| 100+ | 4.29 грн |
| 500+ | 2.92 грн |
| 1000+ | 2.57 грн |
| BAS40HMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 120mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 120mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BAT54AHMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
на замовлення 1431 шт:
термін постачання 21-31 дні (днів)
| BAT54HMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA SSD3
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 30V 200MA SSD3
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.






























