Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103510) > Сторінка 768 з 1726
| Фото | Назва | Виробник | Інформація |
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SCS220KGHRC | Rohm Semiconductor |
Description: DIODE SIL CARB 1200V 20A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1060pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS230AE2HRC | Rohm Semiconductor |
Description: DIODE ARR SIC SCHOT 650V TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS240AE2HRC | Rohm Semiconductor |
Description: DIODE ARRAY SIC 650V 15A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD71815AGW-E2 | Rohm Semiconductor |
Description: IC REG 13OUT BUCK/LDO 55UCSPPackaging: Cut Tape (CT) Package / Case: 55-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.9V ~ 5.5V Frequency - Switching: 6MHz Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8) Supplier Device Package: UCSP55M4C Voltage/Current - Output 1: Programmable, 1A Voltage/Current - Output 2: Programmable, 800mA Voltage/Current - Output 3: Programmable, 500mA w/LED Driver: Yes w/Supervisor: No w/Sequencer: Yes Part Status: Active Number of Outputs: 13 |
на замовлення 8222 шт: термін постачання 21-31 дні (днів) |
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TFZVTR18B | Rohm Semiconductor |
Description: ZENER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR16B | Rohm Semiconductor |
Description: DIODE ZENER 16V 500MW SOD323HE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR13B | Rohm Semiconductor |
Description: ZENER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR2.0B | Rohm Semiconductor |
Description: ZENER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR36B | Rohm Semiconductor |
Description: DIODE ZENER 36V 500MW SOD323HETolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: TUMD2M Power - Max: 500 mW Current - Reverse Leakage @ Vr: 200 nA @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR18B | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 3577 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR16B | Rohm Semiconductor |
Description: DIODE ZENER 16V 500MW SOD323HE |
на замовлення 237 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR13B | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 2944 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR2.0B | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 1877 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TFZVTR36B | Rohm Semiconductor |
Description: DIODE ZENER 36V 500MW SOD323HETolerance: ±3% Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: TUMD2M Power - Max: 500 mW Current - Reverse Leakage @ Vr: 200 nA @ 27 V |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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BD8374HFP-MTR | Rohm Semiconductor |
Description: IC LED DRVR LIN PWM 500MA HRP7Packaging: Cut Tape (CT) Package / Case: HRP-7 (7 Leads + Tab) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100Hz ~ 5kHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: HRP7 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 42V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2188 шт: термін постачання 21-31 дні (днів) |
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BU90R104-E2 | Rohm Semiconductor |
Description: IC RX/DESERIALIZER LVDS 64TQFPPart Status: Active Supplier Device Package: 64-TQFP (10x10) Number of Inputs: 5 Input Type: LVDS Data Rate: 3.92Gbps Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Function: Deserializer Number of Outputs: 35 Mounting Type: Surface Mount Output Type: LVCMOS Package / Case: 64-LQFP Packaging: Cut Tape (CT) |
на замовлення 1770 шт: термін постачання 21-31 дні (днів) |
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BU9796AMUV-E2 | Rohm Semiconductor |
Description: IC DRVR 48 SEGMENT VQFN024V4040Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Display Type: LCD Mounting Type: Surface Mount Interface: 2-Wire Serial Configuration: 48 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V ~ 5.5V Supplier Device Package: VQFN024V4040 Part Status: Active Current - Supply: 12.5 µA |
на замовлення 35805 шт: термін постачання 21-31 дні (днів) |
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RE1J002YNTCL | Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V |
на замовлення 1786 шт: термін постачання 21-31 дні (днів) |
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SML-522MU8WT86 | Rohm Semiconductor |
Description: LED GREEN/RED DIFFUSED 1315 SMDLens Size: 1.30mm x 1.10mm Lens Style: Rectangle with Flat Top Part Status: Active Lens Transparency: Diffused Supplier Device Package: 1315 (0605) Wavelength - Dominant: 572nm Green, 620nm Red Height (Max): 0.70mm Current - Test: 20mA Green, 20mA Red Lens Color: White Voltage - Forward (Vf) (Typ): 2.2V Green, 2.2V Red Configuration: Independent Millicandela Rating: 40mcd Green, 63mcd Red Mounting Type: Surface Mount Size / Dimension: 1.50mm L x 1.30mm W Color: Green, Red Package / Case: 0605 (1513 Metric) Packaging: Cut Tape (CT) |
на замовлення 11207 шт: термін постачання 21-31 дні (днів) |
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SML-H12M8TT86 | Rohm Semiconductor |
Description: LED GREEN CLEAR 0805 SMDPackaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Color: Green Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 25mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 572nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm |
на замовлення 3442 шт: термін постачання 21-31 дні (днів) |
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SML-H12V8TT86C | Rohm Semiconductor |
Description: LED RED CLEAR 2012 SMDPackaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Color: Red Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 25mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 630nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm |
на замовлення 103567 шт: термін постачання 21-31 дні (днів) |
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MSL0402RGBU1 | Rohm Semiconductor |
Description: LED RGB DIFFUSED 1816 SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Color: Red, Green, Blue (RGB) Size / Dimension: 1.80mm L x 1.60mm W Mounting Type: Surface Mount Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue Configuration: Independent Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue Lens Color: White Current - Test: 20mA Red, 20mA Green, 20mA Blue Height (Max): 0.60mm Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue Supplier Device Package: 1816 (0706) Lens Transparency: Diffused Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.80mm x 1.60mm |
на замовлення 10915 шт: термін постачання 21-31 дні (днів) |
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QH8KA4TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3344 шт: термін постачання 21-31 дні (днів) |
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R6009KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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R6020KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
на замовлення 3386 шт: термін постачання 21-31 дні (днів) |
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R6024KNJTL | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 24A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RE1C002ZPTL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V |
на замовлення 2991 шт: термін постачання 21-31 дні (днів) |
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RF4E100AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A HUML2020L8Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V |
на замовлення 5915 шт: термін постачання 21-31 дні (днів) |
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RQ5C060BCTCL | Rohm Semiconductor |
Description: MOSFET P-CHANNEL 20V 6A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V |
на замовлення 3195 шт: термін постачання 21-31 дні (днів) |
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RQ5E025ATTCL | Rohm Semiconductor |
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V |
на замовлення 4967 шт: термін постачання 21-31 дні (днів) |
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RQ5E030AJTCL | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 3A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V |
на замовлення 19699 шт: термін постачання 21-31 дні (днів) |
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RQ5E070BNTCL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V |
на замовлення 1031 шт: термін постачання 21-31 дні (днів) |
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RQ6E085BNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8.5A SOT457Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
на замовлення 1639 шт: термін постачання 21-31 дні (днів) |
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RQ7E055ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 5.5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V |
на замовлення 6161 шт: термін постачання 21-31 дні (днів) |
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RS3E135BNGZETB | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 9.5A 8SOPCurrent - Continuous Drain (Id) @ 25°C: 9.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V |
на замовлення 4961 шт: термін постачання 21-31 дні (днів) |
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RYC002N05T316 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 50V 200MA SST3Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: SST3 Vgs(th) (Max) @ Id: 800mV @ 1mA Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 27985 шт: термін постачання 21-31 дні (днів) |
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UT6JA2TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 4A HUML2020L8Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 4617 шт: термін постачання 21-31 дні (днів) |
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UT6K3TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8Drain to Source Voltage (Vdss): 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A |
на замовлення 8385 шт: термін постачання 21-31 дні (днів) |
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UT6MA3TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 20V 5A HUML2020L8Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 2488 шт: термін постачання 21-31 дні (днів) |
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MSL0402RGBU1 | Rohm Semiconductor |
Description: LED RGB DIFFUSED 1816 SMDPackaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Color: Red, Green, Blue (RGB) Size / Dimension: 1.80mm L x 1.60mm W Mounting Type: Surface Mount Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue Configuration: Independent Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue Lens Color: White Current - Test: 20mA Red, 20mA Green, 20mA Blue Height (Max): 0.60mm Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue Supplier Device Package: 1816 (0706) Lens Transparency: Diffused Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.80mm x 1.60mm |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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QH8JA1TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 5A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QH8KA1TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 4.5A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QH8KA4TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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R6009KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6009KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO220FMPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
на замовлення 247 шт: термін постачання 21-31 дні (днів) |
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R6011KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 11A TO220FMPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
на замовлення 373 шт: термін постачання 21-31 дні (днів) |
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R6015KNZC8 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 15A TO3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6020KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A LPTSInput Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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R6020KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 278 шт: термін постачання 21-31 дні (днів) |
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R6020KNZC8 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 20A TO3PFDrive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6024KNJTL | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 24A LPTSInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6024KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 24A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 291 шт: термін постачання 21-31 дні (днів) |
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R6024KNZ1C9 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 24A TO247Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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R6024KNZC8 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 24A TO3PF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6030KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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R6030KNZ1C9 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 30A TO247 |
на замовлення 260 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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R6030KNZC8 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 30A TO3PFInput Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6035KNZC8 | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 35A TO3PF |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RE1C002ZPTL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA EMT3FFET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Active Supplier Device Package: EMT3F (SOT-416FL) Vgs(th) (Max) @ Id: 1V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RF4E100AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A HUML2020L8Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| SCS220KGHRC |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SCS230AE2HRC |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SCS240AE2HRC |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE ARRAY SIC 650V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BD71815AGW-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Cut Tape (CT)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Cut Tape (CT)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
на замовлення 8222 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 326.75 грн |
| 10+ | 239.30 грн |
| 25+ | 220.48 грн |
| 100+ | 187.46 грн |
| 250+ | 178.51 грн |
| TFZVTR18B |
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Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
товару немає в наявності
В кошику
од. на суму грн.
| TFZVTR16B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW SOD323HE
Description: DIODE ZENER 16V 500MW SOD323HE
товару немає в наявності
В кошику
од. на суму грн.
| TFZVTR13B |
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Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
товару немає в наявності
В кошику
од. на суму грн.
| TFZVTR2.0B |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
товару немає в наявності
В кошику
од. на суму грн.
| TFZVTR36B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
товару немає в наявності
В кошику
од. на суму грн.
| TFZVTR18B |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 3577 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TFZVTR16B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW SOD323HE
Description: DIODE ZENER 16V 500MW SOD323HE
на замовлення 237 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TFZVTR13B |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 2944 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TFZVTR2.0B |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 1877 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TFZVTR36B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.11 грн |
| 18+ | 17.60 грн |
| 100+ | 8.88 грн |
| 500+ | 6.80 грн |
| 1000+ | 5.04 грн |
| BD8374HFP-MTR |
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Виробник: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 238.93 грн |
| 10+ | 173.17 грн |
| 25+ | 158.92 грн |
| 100+ | 134.45 грн |
| 250+ | 127.45 грн |
| 500+ | 123.22 грн |
| 1000+ | 117.78 грн |
| BU90R104-E2 |
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Виробник: Rohm Semiconductor
Description: IC RX/DESERIALIZER LVDS 64TQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
Number of Inputs: 5
Input Type: LVDS
Data Rate: 3.92Gbps
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 35
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
Description: IC RX/DESERIALIZER LVDS 64TQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
Number of Inputs: 5
Input Type: LVDS
Data Rate: 3.92Gbps
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 35
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 484.19 грн |
| 10+ | 359.83 грн |
| 25+ | 333.18 грн |
| 100+ | 285.19 грн |
| 250+ | 272.09 грн |
| 500+ | 264.19 грн |
| BU9796AMUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC DRVR 48 SEGMENT VQFN024V4040
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 48 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: VQFN024V4040
Part Status: Active
Current - Supply: 12.5 µA
Description: IC DRVR 48 SEGMENT VQFN024V4040
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 48 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: VQFN024V4040
Part Status: Active
Current - Supply: 12.5 µA
на замовлення 35805 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.06 грн |
| 10+ | 71.77 грн |
| 25+ | 65.18 грн |
| 100+ | 54.32 грн |
| 250+ | 51.06 грн |
| 500+ | 49.10 грн |
| 1000+ | 46.70 грн |
| RE1J002YNTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Description: MOSFET N-CH 50V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
на замовлення 1786 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.15 грн |
| 24+ | 12.72 грн |
| 100+ | 7.95 грн |
| 500+ | 5.51 грн |
| 1000+ | 4.88 грн |
| SML-522MU8WT86 |
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Виробник: Rohm Semiconductor
Description: LED GREEN/RED DIFFUSED 1315 SMD
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 1315 (0605)
Wavelength - Dominant: 572nm Green, 620nm Red
Height (Max): 0.70mm
Current - Test: 20mA Green, 20mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.2V Green, 2.2V Red
Configuration: Independent
Millicandela Rating: 40mcd Green, 63mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Green, Red
Package / Case: 0605 (1513 Metric)
Packaging: Cut Tape (CT)
Description: LED GREEN/RED DIFFUSED 1315 SMD
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Part Status: Active
Lens Transparency: Diffused
Supplier Device Package: 1315 (0605)
Wavelength - Dominant: 572nm Green, 620nm Red
Height (Max): 0.70mm
Current - Test: 20mA Green, 20mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.2V Green, 2.2V Red
Configuration: Independent
Millicandela Rating: 40mcd Green, 63mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Green, Red
Package / Case: 0605 (1513 Metric)
Packaging: Cut Tape (CT)
на замовлення 11207 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.22 грн |
| 11+ | 29.56 грн |
| 100+ | 19.34 грн |
| 500+ | 14.39 грн |
| 1000+ | 13.24 грн |
| 2000+ | 12.30 грн |
| SML-H12M8TT86 |
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Виробник: Rohm Semiconductor
Description: LED GREEN CLEAR 0805 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Description: LED GREEN CLEAR 0805 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
на замовлення 3442 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.06 грн |
| 16+ | 19.96 грн |
| 100+ | 14.27 грн |
| 500+ | 10.96 грн |
| 1000+ | 10.15 грн |
| SML-H12V8TT86C |
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Виробник: Rohm Semiconductor
Description: LED RED CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Red
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 630nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Description: LED RED CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Red
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 630nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
на замовлення 103567 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.57 грн |
| 23+ | 13.79 грн |
| 100+ | 9.71 грн |
| 500+ | 7.37 грн |
| 1000+ | 6.80 грн |
| MSL0402RGBU1 |
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Виробник: Rohm Semiconductor
Description: LED RGB DIFFUSED 1816 SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
Description: LED RGB DIFFUSED 1816 SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
на замовлення 10915 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.67 грн |
| 10+ | 44.65 грн |
| 100+ | 32.88 грн |
| 500+ | 25.94 грн |
| 1000+ | 24.33 грн |
| QH8KA4TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3344 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.09 грн |
| 10+ | 71.08 грн |
| 100+ | 47.45 грн |
| 500+ | 35.01 грн |
| 1000+ | 31.95 грн |
| R6009KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.07 грн |
| 10+ | 134.16 грн |
| R6020KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 600V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 3386 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 337.83 грн |
| 10+ | 214.46 грн |
| 100+ | 151.79 грн |
| 500+ | 117.32 грн |
| R6024KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 24A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| RE1C002ZPTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
на замовлення 2991 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.32 грн |
| 21+ | 14.93 грн |
| 100+ | 9.37 грн |
| 500+ | 6.51 грн |
| 1000+ | 5.78 грн |
| RF4E100AJTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
на замовлення 5915 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.69 грн |
| 10+ | 60.19 грн |
| 100+ | 39.88 грн |
| 500+ | 29.23 грн |
| 1000+ | 26.60 грн |
| RQ5C060BCTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
на замовлення 3195 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 80.70 грн |
| 10+ | 48.30 грн |
| 100+ | 31.76 грн |
| 500+ | 23.13 грн |
| 1000+ | 20.98 грн |
| RQ5E025ATTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
на замовлення 4967 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.72 грн |
| 12+ | 25.52 грн |
| 100+ | 16.32 грн |
| 500+ | 11.59 грн |
| 1000+ | 10.39 грн |
| RQ5E030AJTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
на замовлення 19699 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.05 грн |
| 11+ | 29.18 грн |
| 100+ | 18.76 грн |
| 500+ | 13.39 грн |
| 1000+ | 12.03 грн |
| RQ5E070BNTCL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
на замовлення 1031 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.74 грн |
| 10+ | 46.55 грн |
| 100+ | 30.54 грн |
| 500+ | 22.20 грн |
| 1000+ | 20.12 грн |
| RQ6E085BNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
на замовлення 1639 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.73 грн |
| 10+ | 58.43 грн |
| 100+ | 38.79 грн |
| 500+ | 28.49 грн |
| 1000+ | 25.94 грн |
| RQ7E055ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Description: MOSFET P-CH 30V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 6161 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.53 грн |
| 10+ | 57.67 грн |
| 100+ | 43.08 грн |
| 500+ | 34.12 грн |
| 1000+ | 31.15 грн |
| RS3E135BNGZETB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
на замовлення 4961 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.84 грн |
| 10+ | 74.28 грн |
| 100+ | 49.60 грн |
| 500+ | 36.61 грн |
| 1000+ | 33.41 грн |
| RYC002N05T316 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 50V 200MA SST3
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 800mV @ 1mA
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 50V 200MA SST3
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: SST3
Vgs(th) (Max) @ Id: 800mV @ 1mA
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 27985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.69 грн |
| 17+ | 18.51 грн |
| 100+ | 9.36 грн |
| 500+ | 7.79 грн |
| 1000+ | 6.06 грн |
| UT6JA2TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 4617 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.82 грн |
| 10+ | 53.10 грн |
| 100+ | 35.00 грн |
| 500+ | 25.51 грн |
| 1000+ | 23.16 грн |
| UT6K3TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A
на замовлення 8385 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.07 грн |
| 10+ | 49.90 грн |
| 100+ | 32.78 грн |
| 500+ | 23.85 грн |
| 1000+ | 21.62 грн |
| UT6MA3TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 2488 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.31 грн |
| 10+ | 58.89 грн |
| 100+ | 39.01 грн |
| 500+ | 28.57 грн |
| 1000+ | 25.98 грн |
| MSL0402RGBU1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED RGB DIFFUSED 1816 SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
Description: LED RGB DIFFUSED 1816 SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 23.68 грн |
| 6000+ | 21.73 грн |
| 9000+ | 21.17 грн |
| QH8JA1TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 20V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
товару немає в наявності
В кошику
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| QH8KA1TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| QH8KA4TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 31.05 грн |
| R6009KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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В кошику
од. на суму грн.
| R6009KNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 193.04 грн |
| 10+ | 120.22 грн |
| 100+ | 82.65 грн |
| R6011KNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
на замовлення 373 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 204.12 грн |
| 10+ | 126.93 грн |
| 100+ | 87.16 грн |
| R6015KNZC8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| R6020KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 20A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 120.89 грн |
| 2000+ | 114.32 грн |
| R6020KNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 600V 20A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 278 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.56 грн |
| 10+ | 163.72 грн |
| 100+ | 119.28 грн |
| R6020KNZC8 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 20A TO3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Description: MOSFET N-CHANNEL 600V 20A TO3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
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| R6024KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CHANNEL 600V 24A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| R6024KNX |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 600V 24A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 291 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 244.47 грн |
| 10+ | 168.22 грн |
| 100+ | 117.39 грн |
| R6024KNZ1C9 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CHANNEL 600V 24A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 331.50 грн |
| R6024KNZC8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A TO3PF
Description: MOSFET N-CHANNEL 600V 24A TO3PF
товару немає в наявності
В кошику
од. на суму грн.
| R6030KNX |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 600V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 363.93 грн |
| 10+ | 232.67 грн |
| 100+ | 165.40 грн |
| R6030KNZ1C9 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 30A TO247
Description: MOSFET N-CHANNEL 600V 30A TO247
на замовлення 260 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| R6030KNZC8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CHANNEL 600V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| R6035KNZC8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 35A TO3PF
Description: MOSFET N-CHANNEL 600V 35A TO3PF
на замовлення 360 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RE1C002ZPTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3F
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: EMT3F (SOT-416FL)
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Description: MOSFET P-CH 20V 200MA EMT3F
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: EMT3F (SOT-416FL)
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
товару немає в наявності
В кошику
од. на суму грн.
| RF4E100AJTCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Description: MOSFET N-CH 30V 10A HUML2020L8
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 25.73 грн |




























