Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102290) > Сторінка 771 з 1705
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RB521AS-40T2R | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB521CS-30T2RA | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB530CM-60T2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2M (SOD-923) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA Current - Reverse Leakage @ Vr: 1 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB530VM-30TE-17 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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RB531VM-40TE-17 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB550VAM-30TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB578VAM100TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 700mA Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA Current - Reverse Leakage @ Vr: 200 nA @ 100 V |
на замовлення 26300 шт: термін постачання 21-31 дні (днів) |
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RB886CST2RA | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Diode Type: Schottky - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz Voltage - Peak Reverse (Max): 5V Supplier Device Package: VMN2 (SOD-923) Part Status: Not For New Designs Current - Max: 10 mA |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RBE05SM20AT2R | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RBE07V20ATE-17 | Rohm Semiconductor |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RF01VM2STE-17 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 100mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 10 µA @ 250 V |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RF101L2SDDTE25 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RF4E075ATTCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RFN3BM2SFHTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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RFN6BM2DTL | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RFU02VSM6STR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: TUMD2SM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RFUH10NS4STL | Rohm Semiconductor |
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на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RN242CST2RA | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RQ3E180AJTB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 11mA Supplier Device Package: 8-HSMT (3.2x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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RQ5E040AJTCL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RQ6E030ATTCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RQ6E055BNTCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RR2L4SDDTE25 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RR2L6SDDTE25 | Rohm Semiconductor |
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на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RRE02VS4SGTR | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RRE02VSM4STR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: TUMD2SM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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RRE07VSM4STR | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RS1E350BNTB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSA30LDDTE25 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Current - Peak Pulse (10/1000µs): 14.4A (8/20µs) Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: PMDS Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSB6.8SMT2N | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSX201VAM30TR | Rohm Semiconductor |
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на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RUS100N02TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BH7649KS2 | Rohm Semiconductor |
Description: IC VIDEO SIGNAL SWITCHER 52SQFP Packaging: Tray Package / Case: 52-LQFP Mounting Type: Surface Mount Function: Switch Voltage - Supply: 7.5V ~ 9.5V Applications: Consumer Video Supplier Device Package: SQFP-T52M (10x10) Part Status: Active Control Interface: I2C |
на замовлення 994 шт: термін постачання 21-31 дні (днів) |
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BP5728 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BU7988KVT | Rohm Semiconductor |
![]() Packaging: Tray Package / Case: 100-TQFP Output Type: LVCMOS Mounting Type: Surface Mount Number of Outputs: 56 Function: Serializer/Deserializer Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Input Type: LVDS Number of Inputs: 8 Supplier Device Package: 100-TQFP (14x14) Part Status: Active |
на замовлення 286 шт: термін постачання 21-31 дні (днів) |
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BU9408KS2 | Rohm Semiconductor |
![]() Packaging: Tray Package / Case: 52-LQFP Mounting Type: Surface Mount Interface: I2C, I2S, SPDIF Type: Audio Operating Temperature: -25°C ~ 85°C (TA) On-Chip RAM: 1.375KB Voltage - I/O: 3.30V Voltage - Core: 3.30V Clock Rate: 24.576MHz Supplier Device Package: SQFP-T52M (10x10) |
на замовлення 987 шт: термін постачання 21-31 дні (днів) |
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BD9428 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Outputs: 4 Frequency: 150kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 250mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 16-DIP Dimming: PWM Voltage - Supply (Min): 9V Voltage - Supply (Max): 35V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BD95820N-LB | Rohm Semiconductor | Description: IC EARTH LEAKAGE DETECTOR 8SIP |
на замовлення 335 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BM63363S-VA | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.134", 28.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 10 A Voltage: 600 V |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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BM63363S-VC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 10 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BM63364S-VA | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.134", 28.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 15 A Voltage: 600 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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BM63364S-VC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 15 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BM63763S-VA | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.134", 28.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 10 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BM63763S-VC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 10 A Voltage: 600 V |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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BM63764S-VA | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.134", 28.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 15 A Voltage: 600 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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BM63764S-VC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (1.327", 33.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 15 A Voltage: 600 V |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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BR24G01-3 | Rohm Semiconductor |
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на замовлення 1864 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BR24G01-3A | Rohm Semiconductor |
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на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BR24G02-3 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-DIP-T Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BR24G02-3A | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BR24G04-3 | Rohm Semiconductor |
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на замовлення 1980 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BR24G08-3A | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP-T Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BR24G128-3 | Rohm Semiconductor |
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на замовлення 1986 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BR24G16-3 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-DIP-T Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BR24G1M-3A | Rohm Semiconductor |
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на замовлення 1985 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BR24G256-3 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-DIP-T Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BR24G256-3A | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-DIP-T Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BR24G32-3 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BR24G32-3A | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BR24G512-3A | Rohm Semiconductor |
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на замовлення 1988 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
RB521AS-40T2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA VML2
Description: DIODE SCHOTTKY 40V 200MA VML2
товару немає в наявності
В кошику
од. на суму грн.
RB521CS-30T2RA |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
RB530CM-60T2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
RB530VM-30TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.11 грн |
6000+ | 2.83 грн |
9000+ | 2.68 грн |
15000+ | 2.51 грн |
RB531VM-40TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
Description: DIODE SCHOTTKY 40V 100MA UMD2
товару немає в наявності
В кошику
од. на суму грн.
RB550VAM-30TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.28 грн |
RB578VAM100TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 700MA TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
Description: DIODE SCHOTTKY 100V 700MA TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
на замовлення 26300 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.78 грн |
6000+ | 5.23 грн |
9000+ | 5.11 грн |
15000+ | 4.78 грн |
21000+ | 4.56 грн |
RB886CST2RA |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 15V 10MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: VMN2 (SOD-923)
Part Status: Not For New Designs
Current - Max: 10 mA
Description: DIODE SCHOTTKY 15V 10MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: VMN2 (SOD-923)
Part Status: Not For New Designs
Current - Max: 10 mA
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 7.65 грн |
RBE05SM20AT2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA EMD2
Description: DIODE SCHOTTKY 20V 500MA EMD2
товару немає в наявності
В кошику
од. на суму грн.
RBE07V20ATE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 700MA UMD2
Description: DIODE SCHOTTKY 20V 700MA UMD2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RF01VM2STE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 250V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
Description: DIODE GEN PURP 250V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RF101L2SDDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
RF4E075ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 18.45 грн |
6000+ | 16.38 грн |
RFN3BM2SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 40.11 грн |
RFN6BM2DTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 3A TO252
Description: DIODE ARRAY GP 200V 3A TO252
товару немає в наявності
В кошику
од. на суму грн.
RFU02VSM6STR |
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Виробник: Rohm Semiconductor
Description: DIODE GP 600V 200MA TUMD2SM
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 200MA TUMD2SM
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.59 грн |
6000+ | 5.74 грн |
9000+ | 5.43 грн |
RFUH10NS4STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 430V 10A LPDS
Description: DIODE GEN PURP 430V 10A LPDS
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RN242CST2RA |
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Виробник: Rohm Semiconductor
Description: DIODE PIN HF SW 30V 100MA VMN2
Description: DIODE PIN HF SW 30V 100MA VMN2
товару немає в наявності
В кошику
од. на суму грн.
RQ3E180AJTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 29.21 грн |
RQ5E040AJTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
RQ6E030ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Description: MOSFET P-CH 30V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
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од. на суму грн.
RQ6E055BNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 5.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
Description: MOSFET N-CH 30V 5.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
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од. на суму грн.
RR2L4SDDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 2A PMDS
Description: DIODE GEN PURP 400V 2A PMDS
товару немає в наявності
В кошику
од. на суму грн.
RR2L6SDDTE25 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 2A PMDS
Description: DIODE GEN PURP 600V 2A PMDS
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RRE02VS4SGTR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 200MA TUMD2S
Description: DIODE GEN PURP 400V 200MA TUMD2S
товару немає в наявності
В кошику
од. на суму грн.
RRE02VSM4STR |
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Виробник: Rohm Semiconductor
Description: DIODE GP 400V 200MA TUMD2SM
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GP 400V 200MA TUMD2SM
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.24 грн |
6000+ | 5.43 грн |
9000+ | 5.13 грн |
15000+ | 4.51 грн |
RRE07VSM4STR |
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Виробник: Rohm Semiconductor
Description: DIODE GP 400V 700MA TUMD2SM
Description: DIODE GP 400V 700MA TUMD2SM
товару немає в наявності
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RS1E350BNTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A 8HSOP
Description: MOSFET N-CH 30V 35A 8HSOP
товару немає в наявності
В кошику
од. на суму грн.
RSA30LDDTE25 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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RSB6.8SMT2N |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD2
Description: TVS DIODE 3.5VWM EMD2
товару немає в наявності
В кошику
од. на суму грн.
RSX201VAM30TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RUS100N02TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
BH7649KS2 |
Виробник: Rohm Semiconductor
Description: IC VIDEO SIGNAL SWITCHER 52SQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Function: Switch
Voltage - Supply: 7.5V ~ 9.5V
Applications: Consumer Video
Supplier Device Package: SQFP-T52M (10x10)
Part Status: Active
Control Interface: I2C
Description: IC VIDEO SIGNAL SWITCHER 52SQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Function: Switch
Voltage - Supply: 7.5V ~ 9.5V
Applications: Consumer Video
Supplier Device Package: SQFP-T52M (10x10)
Part Status: Active
Control Interface: I2C
на замовлення 994 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 420.98 грн |
10+ | 364.01 грн |
25+ | 344.15 грн |
80+ | 279.91 грн |
230+ | 265.56 грн |
440+ | 238.29 грн |
BP5728 |
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Виробник: Rohm Semiconductor
Description: IC AC/DC CONVERTER ISO 6SIP
Description: IC AC/DC CONVERTER ISO 6SIP
товару немає в наявності
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од. на суму грн.
BU7988KVT |
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Виробник: Rohm Semiconductor
Description: IC DESERIALIZER LVDS 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Output Type: LVCMOS
Mounting Type: Surface Mount
Number of Outputs: 56
Function: Serializer/Deserializer
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Input Type: LVDS
Number of Inputs: 8
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Description: IC DESERIALIZER LVDS 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Output Type: LVCMOS
Mounting Type: Surface Mount
Number of Outputs: 56
Function: Serializer/Deserializer
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Input Type: LVDS
Number of Inputs: 8
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
на замовлення 286 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 600.84 грн |
10+ | 522.10 грн |
25+ | 497.87 грн |
80+ | 405.70 грн |
230+ | 387.46 грн |
BU9408KS2 |
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Виробник: Rohm Semiconductor
Description: IC DSP 32BIT AUDIO 52SQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Interface: I2C, I2S, SPDIF
Type: Audio
Operating Temperature: -25°C ~ 85°C (TA)
On-Chip RAM: 1.375KB
Voltage - I/O: 3.30V
Voltage - Core: 3.30V
Clock Rate: 24.576MHz
Supplier Device Package: SQFP-T52M (10x10)
Description: IC DSP 32BIT AUDIO 52SQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Interface: I2C, I2S, SPDIF
Type: Audio
Operating Temperature: -25°C ~ 85°C (TA)
On-Chip RAM: 1.375KB
Voltage - I/O: 3.30V
Voltage - Core: 3.30V
Clock Rate: 24.576MHz
Supplier Device Package: SQFP-T52M (10x10)
на замовлення 987 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 467.94 грн |
10+ | 404.85 грн |
25+ | 382.71 грн |
80+ | 311.29 грн |
230+ | 295.32 грн |
440+ | 264.99 грн |
BD9428 |
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Виробник: Rohm Semiconductor
Description: IC LED DRV RGLTR PWM 250MA 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 4
Frequency: 150kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 250mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 16-DIP
Dimming: PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 35V
Description: IC LED DRV RGLTR PWM 250MA 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 4
Frequency: 150kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 250mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 16-DIP
Dimming: PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 35V
товару немає в наявності
В кошику
од. на суму грн.
BD95820N-LB |
Виробник: Rohm Semiconductor
Description: IC EARTH LEAKAGE DETECTOR 8SIP
Description: IC EARTH LEAKAGE DETECTOR 8SIP
на замовлення 335 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BM63363S-VA |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1301.94 грн |
10+ | 1104.29 грн |
BM63363S-VC |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
BM63364S-VA |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1504.08 грн |
10+ | 1275.56 грн |
BM63364S-VC |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
BM63763S-VA |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
BM63763S-VC |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1443.60 грн |
10+ | 1224.99 грн |
BM63764S-VA |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1664.83 грн |
60+ | 1328.80 грн |
BM63764S-VC |
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Виробник: Rohm Semiconductor
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
Description: IC IPM 600V IGBT SW 25HSDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1751.58 грн |
BR24G01-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1K I2C BUS DIP-T8
Description: IC EEPROM 1K I2C BUS DIP-T8
на замовлення 1864 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BR24G01-3A |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1K I2C BUS DIP-T8
Description: IC EEPROM 1K I2C BUS DIP-T8
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BR24G02-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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од. на суму грн.
BR24G02-3A |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2K I2C BUS DIP-T8
Description: IC EEPROM 2K I2C BUS DIP-T8
товару немає в наявності
В кошику
од. на суму грн.
BR24G04-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 4K I2C BUS DIP-T8
Description: IC EEPROM 4K I2C BUS DIP-T8
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BR24G08-3A |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 1MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C 1MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BR24G128-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128K I2C BUS DIP-T8
Description: IC EEPROM 128K I2C BUS DIP-T8
на замовлення 1986 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BR24G16-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BR24G1M-3A |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1024K I2C BUS DIP-T8
Description: IC EEPROM 1024K I2C BUS DIP-T8
на замовлення 1985 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BR24G256-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT I2C 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BR24G256-3A |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 1MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT I2C 1MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP-T
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BR24G32-3 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32K I2C 400KHZ 8DIP
Description: IC EEPROM 32K I2C 400KHZ 8DIP
товару немає в наявності
В кошику
од. на суму грн.
BR24G32-3A |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32K I2C 1MHZ 8-DIP-T
Description: IC EEPROM 32K I2C 1MHZ 8-DIP-T
товару немає в наявності
В кошику
од. на суму грн.
BR24G512-3A |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512K I2C BUS DIP-T8
Description: IC EEPROM 512K I2C BUS DIP-T8
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.