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LTR100JZPF2203 LTR100JZPF2203 Rohm Semiconductor ltr-e.pdf Description: RES SMD 220K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 220 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
5+70.16 грн
10+38.89 грн
50+27.92 грн
100+22.99 грн
500+17.62 грн
1000+15.92 грн
Мінімальне замовлення: 5
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LM358WPT LM358WPT Rohm Semiconductor LM358%2CLM324%2CLM2904%2CLM2902.pdf Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 600µA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-TSSOP-B
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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ESR01MZPJ Rohm Semiconductor esr-e.pdf Description: RES 0 OHM JUMPER 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: Jumper
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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ESR01MZPF Rohm Semiconductor esr-e.pdf Description: RES 0 OHM JUMPER 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: Jumper
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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BM2P181S-Z BM2P181S-Z Rohm Semiconductor datasheet?p=BM2P181S-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NON-ISOLATED TYPE PWM DC/DC CONV
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Frequency - Switching: 25kHz
Voltage - Input (Max): 20.68V
Topology: Buck
Supplier Device Package: 7-DIPK
Synchronous Rectifier: No
Voltage - Input (Min): 12V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+204.50 грн
10+176.91 грн
25+166.90 грн
100+133.46 грн
250+125.32 грн
500+109.65 грн
1000+89.37 грн
Мінімальне замовлення: 2
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RB511VM-40TE-17 RB511VM-40TE-17 Rohm Semiconductor datasheet?p=RB511VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.17 грн
Мінімальне замовлення: 3000
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RB511VM-40TE-17 RB511VM-40TE-17 Rohm Semiconductor datasheet?p=RB511VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
на замовлення 8220 шт:
термін постачання 21-31 дні (днів)
14+24.81 грн
21+16.31 грн
100+7.98 грн
500+6.25 грн
1000+4.34 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
RB511VM-30FHTE-17 RB511VM-30FHTE-17 Rohm Semiconductor RB511VM-30FH.pdf Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
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RB511VM-30FHTE-17 RB511VM-30FHTE-17 Rohm Semiconductor RB511VM-30FH.pdf Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
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R6027YNXC7G R6027YNXC7G Rohm Semiconductor r6027ynxc7g-e.pdf Description: NCH 600V 14A, TO-220FM, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 7A, 12V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+529.65 грн
10+343.10 грн
100+248.47 грн
500+195.34 грн
1000+191.63 грн
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BU4920F-TR BU4920F-TR Rohm Semiconductor datasheet?p=BU4920F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
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BU4920F-TR BU4920F-TR Rohm Semiconductor datasheet?p=BU4920F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
8+46.21 грн
10+39.14 грн
25+36.72 грн
100+28.12 грн
250+26.12 грн
500+22.23 грн
1000+17.49 грн
Мінімальне замовлення: 8
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BV1HJC45EFJ-CE2 BV1HJC45EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HJC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BV1HJC45EFJ-CE2 BV1HJC45EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HJC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2308 шт:
термін постачання 21-31 дні (днів)
2+189.96 грн
10+114.20 грн
25+96.40 грн
100+71.54 грн
250+62.25 грн
500+56.53 грн
1000+50.89 грн
Мінімальне замовлення: 2
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BV1HL045EFJ-CE2 BV1HL045EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HL045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS 1CH HI
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+72.31 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BV1HL045EFJ-CE2 BV1HL045EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HL045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS 1CH HI
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2772 шт:
термін постачання 21-31 дні (днів)
3+142.90 грн
10+101.10 грн
25+92.05 грн
100+77.05 грн
250+72.59 грн
500+69.90 грн
1000+66.57 грн
Мінімальне замовлення: 3
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LTR100LJZPJSR047 LTR100LJZPJSR047 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.047 OHM 5% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 47 mOhms
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LTR100LJZPJSR047 LTR100LJZPJSR047 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.047 OHM 5% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 47 mOhms
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)
5+84.71 грн
10+59.16 грн
25+51.15 грн
50+39.75 грн
100+34.80 грн
250+29.64 грн
Мінімальне замовлення: 5
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LTR100JZPFLR180 LTR100JZPFLR180 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.18 OHM 1% 2W 2512 WIDE
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 MOhms
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LTR100JZPFLR180 LTR100JZPFLR180 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.18 OHM 1% 2W 2512 WIDE
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 MOhms
на замовлення 3998 шт:
термін постачання 21-31 дні (днів)
3+117.23 грн
10+66.74 грн
50+49.14 грн
100+40.97 грн
500+31.97 грн
1000+29.21 грн
Мінімальне замовлення: 3
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TRR01MZPF2261 TRR01MZPF2261 Rohm Semiconductor TRR_Series_DS.pdf Description: RES SMD 2.26K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 2.26 kOhms
на замовлення 8514 шт:
термін постачання 21-31 дні (днів)
34+10.27 грн
68+4.86 грн
88+3.76 грн
105+2.95 грн
124+2.51 грн
250+2.06 грн
500+1.77 грн
1000+1.57 грн
5000+1.25 грн
Мінімальне замовлення: 34
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ESR18EZPD3001 ESR18EZPD3001 Rohm Semiconductor esr-e.pdf Description: RES 3K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3 kOhms
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ESR18EZPD3001 ESR18EZPD3001 Rohm Semiconductor esr-e.pdf Description: RES 3K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3 kOhms
на замовлення 4971 шт:
термін постачання 21-31 дні (днів)
19+18.82 грн
36+9.31 грн
100+5.60 грн
1000+3.64 грн
2500+3.29 грн
Мінімальне замовлення: 19
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ESR10EZPD1203 ESR10EZPD1203 Rohm Semiconductor esr-e.pdf Description: RES 120K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
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ESR10EZPD1203 ESR10EZPD1203 Rohm Semiconductor esr-e.pdf Description: RES 120K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
на замовлення 4850 шт:
термін постачання 21-31 дні (днів)
22+16.26 грн
42+7.99 грн
52+6.36 грн
61+5.10 грн
100+4.42 грн
250+3.73 грн
500+3.33 грн
1000+2.97 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
ESR18EZPD1203 ESR18EZPD1203 Rohm Semiconductor esr-e.pdf Description: RES 120K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+3.58 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ESR18EZPD1203 ESR18EZPD1203 Rohm Semiconductor esr-e.pdf Description: RES 120K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
18+19.68 грн
34+9.81 грн
100+5.87 грн
1000+3.84 грн
2500+3.46 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SFR03EZPF4872 SFR03EZPF4872 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 48.7 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+1.40 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SFR03EZPF4872 SFR03EZPF4872 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 48.7 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
34+10.27 грн
68+4.86 грн
102+3.26 грн
119+2.61 грн
500+1.87 грн
1000+1.65 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SDR03EZPF4871 SDR03EZPF4871 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 4.87 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+1.86 грн
10000+1.62 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SDR03EZPF4871 SDR03EZPF4871 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 4.87 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
27+12.83 грн
52+6.43 грн
77+4.33 грн
100+3.47 грн
500+2.50 грн
1000+2.20 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SDR03EZPF4873 SDR03EZPF4873 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 487 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+1.86 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SDR03EZPF4873 SDR03EZPF4873 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 487 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
27+12.83 грн
52+6.43 грн
77+4.33 грн
100+3.47 грн
500+2.50 грн
1000+2.20 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
QS8M51HZGTR QS8M51HZGTR Rohm Semiconductor datasheet?p=QS8M51HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N/P-CH 100V 2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
QS8M51HZGTR QS8M51HZGTR Rohm Semiconductor datasheet?p=QS8M51HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N/P-CH 100V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1319 шт:
термін постачання 21-31 дні (днів)
4+104.39 грн
10+63.61 грн
100+42.24 грн
500+31.04 грн
1000+28.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
RQ1E070RPHZGTR RQ1E070RPHZGTR Rohm Semiconductor Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
RQ1E070RPHZGTR RQ1E070RPHZGTR Rohm Semiconductor Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
товару немає в наявності
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RQ1A070ZPHZGTR RQ1A070ZPHZGTR Rohm Semiconductor Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
товару немає в наявності
В кошику  од. на суму  грн.
RQ1A070ZPHZGTR RQ1A070ZPHZGTR Rohm Semiconductor Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
товару немає в наявності
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RQ1E050RPFRATR Rohm Semiconductor Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RQ1E050RPFRATR Rohm Semiconductor Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
ESR10EZPD5102 ESR10EZPD5102 Rohm Semiconductor esr-e.pdf Description: RES 51K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
ESR10EZPD5102 ESR10EZPD5102 Rohm Semiconductor esr-e.pdf Description: RES 51K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)
22+16.26 грн
42+7.99 грн
52+6.36 грн
61+5.10 грн
100+4.42 грн
250+3.73 грн
500+3.36 грн
1000+2.97 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
RFN2VWM2STR RFN2VWM2STR Rohm Semiconductor datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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RFN2VWM2STR RFN2VWM2STR Rohm Semiconductor datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
9+41.93 грн
10+34.77 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
RFN2VWM2STFTR RFN2VWM2STFTR Rohm Semiconductor datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
RFN2VWM2STFTR RFN2VWM2STFTR Rohm Semiconductor datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
7+51.34 грн
10+41.78 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ESR03EZPF4992 ESR03EZPF4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
ESR03EZPF4992 ESR03EZPF4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
на замовлення 4275 шт:
термін постачання 21-31 дні (днів)
29+11.98 грн
56+5.93 грн
101+3.29 грн
1000+1.94 грн
2500+1.74 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
ESR03EZPD4992 ESR03EZPD4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
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ESR03EZPD4992 ESR03EZPD4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
на замовлення 4790 шт:
термін постачання 21-31 дні (днів)
22+16.26 грн
39+8.49 грн
57+5.87 грн
100+4.74 грн
500+3.48 грн
1000+3.08 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
R6004KNXC7G Rohm Semiconductor r6004knx-e.pdf Description: 600V 4A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+171.13 грн
10+136.78 грн
100+108.90 грн
500+86.48 грн
1000+73.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R6007KND3TL1 R6007KND3TL1 Rohm Semiconductor Description: NCH 600V 7A TO-252, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6007KND3TL1 R6007KND3TL1 Rohm Semiconductor Description: NCH 600V 7A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6009KND3TL1 R6009KND3TL1 Rohm Semiconductor datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+52.04 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
R6009KND3TL1 R6009KND3TL1 Rohm Semiconductor datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
3+165.14 грн
10+106.70 грн
100+75.01 грн
500+56.39 грн
1000+55.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BR24G32F-3AGTE2 BR24G32F-3AGTE2 Rohm Semiconductor datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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BR24G32F-3AGTE2 BR24G32F-3AGTE2 Rohm Semiconductor datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 2176 шт:
термін постачання 21-31 дні (днів)
14+25.67 грн
15+22.99 грн
25+22.44 грн
50+20.65 грн
100+20.20 грн
250+19.62 грн
500+18.86 грн
1000+18.43 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BR24G32FJ-3AGTE2 BR24G32FJ-3AGTE2 Rohm Semiconductor br24g32-3a-e.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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BR24G32FJ-3AGTE2 BR24G32FJ-3AGTE2 Rohm Semiconductor br24g32-3a-e.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)
11+30.49 грн
25+29.63 грн
50+27.25 грн
100+26.65 грн
250+25.88 грн
500+24.88 грн
1000+24.29 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
LTR100JZPF2203 ltr-e.pdf
LTR100JZPF2203
Виробник: Rohm Semiconductor
Description: RES SMD 220K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 220 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.16 грн
10+38.89 грн
50+27.92 грн
100+22.99 грн
500+17.62 грн
1000+15.92 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
LM358WPT LM358%2CLM324%2CLM2904%2CLM2902.pdf
LM358WPT
Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 600µA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-TSSOP-B
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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ESR01MZPJ esr-e.pdf
Виробник: Rohm Semiconductor
Description: RES 0 OHM JUMPER 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: Jumper
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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ESR01MZPF esr-e.pdf
Виробник: Rohm Semiconductor
Description: RES 0 OHM JUMPER 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: Jumper
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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BM2P181S-Z datasheet?p=BM2P181S-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BM2P181S-Z
Виробник: Rohm Semiconductor
Description: NON-ISOLATED TYPE PWM DC/DC CONV
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Frequency - Switching: 25kHz
Voltage - Input (Max): 20.68V
Topology: Buck
Supplier Device Package: 7-DIPK
Synchronous Rectifier: No
Voltage - Input (Min): 12V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+204.50 грн
10+176.91 грн
25+166.90 грн
100+133.46 грн
250+125.32 грн
500+109.65 грн
1000+89.37 грн
Мінімальне замовлення: 2
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RB511VM-40TE-17 datasheet?p=RB511VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB511VM-40TE-17
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RB511VM-40TE-17 datasheet?p=RB511VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB511VM-40TE-17
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
на замовлення 8220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+24.81 грн
21+16.31 грн
100+7.98 грн
500+6.25 грн
1000+4.34 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
RB511VM-30FHTE-17 RB511VM-30FH.pdf
RB511VM-30FHTE-17
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
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RB511VM-30FHTE-17 RB511VM-30FH.pdf
RB511VM-30FHTE-17
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
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R6027YNXC7G r6027ynxc7g-e.pdf
R6027YNXC7G
Виробник: Rohm Semiconductor
Description: NCH 600V 14A, TO-220FM, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 7A, 12V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+529.65 грн
10+343.10 грн
100+248.47 грн
500+195.34 грн
1000+191.63 грн
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BU4920F-TR datasheet?p=BU4920F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU4920F-TR
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
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BU4920F-TR datasheet?p=BU4920F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU4920F-TR
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+46.21 грн
10+39.14 грн
25+36.72 грн
100+28.12 грн
250+26.12 грн
500+22.23 грн
1000+17.49 грн
Мінімальне замовлення: 8
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BV1HJC45EFJ-CE2 datasheet?p=BV1HJC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HJC45EFJ-CE2
Виробник: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BV1HJC45EFJ-CE2 datasheet?p=BV1HJC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HJC45EFJ-CE2
Виробник: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2308 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+189.96 грн
10+114.20 грн
25+96.40 грн
100+71.54 грн
250+62.25 грн
500+56.53 грн
1000+50.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BV1HL045EFJ-CE2 datasheet?p=BV1HL045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HL045EFJ-CE2
Виробник: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS 1CH HI
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+72.31 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BV1HL045EFJ-CE2 datasheet?p=BV1HL045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HL045EFJ-CE2
Виробник: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS 1CH HI
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2772 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.90 грн
10+101.10 грн
25+92.05 грн
100+77.05 грн
250+72.59 грн
500+69.90 грн
1000+66.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LTR100LJZPJSR047 ltr-low-e.pdf
LTR100LJZPJSR047
Виробник: Rohm Semiconductor
Description: RES 0.047 OHM 5% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 47 mOhms
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LTR100LJZPJSR047 ltr-low-e.pdf
LTR100LJZPJSR047
Виробник: Rohm Semiconductor
Description: RES 0.047 OHM 5% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 47 mOhms
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+84.71 грн
10+59.16 грн
25+51.15 грн
50+39.75 грн
100+34.80 грн
250+29.64 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
LTR100JZPFLR180 ltr-low-e.pdf
LTR100JZPFLR180
Виробник: Rohm Semiconductor
Description: RES SMD 0.18 OHM 1% 2W 2512 WIDE
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 MOhms
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LTR100JZPFLR180 ltr-low-e.pdf
LTR100JZPFLR180
Виробник: Rohm Semiconductor
Description: RES SMD 0.18 OHM 1% 2W 2512 WIDE
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 MOhms
на замовлення 3998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.23 грн
10+66.74 грн
50+49.14 грн
100+40.97 грн
500+31.97 грн
1000+29.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TRR01MZPF2261 TRR_Series_DS.pdf
TRR01MZPF2261
Виробник: Rohm Semiconductor
Description: RES SMD 2.26K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 2.26 kOhms
на замовлення 8514 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+10.27 грн
68+4.86 грн
88+3.76 грн
105+2.95 грн
124+2.51 грн
250+2.06 грн
500+1.77 грн
1000+1.57 грн
5000+1.25 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
ESR18EZPD3001 esr-e.pdf
ESR18EZPD3001
Виробник: Rohm Semiconductor
Description: RES 3K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3 kOhms
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ESR18EZPD3001 esr-e.pdf
ESR18EZPD3001
Виробник: Rohm Semiconductor
Description: RES 3K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3 kOhms
на замовлення 4971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.82 грн
36+9.31 грн
100+5.60 грн
1000+3.64 грн
2500+3.29 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
ESR10EZPD1203 esr-e.pdf
ESR10EZPD1203
Виробник: Rohm Semiconductor
Description: RES 120K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
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ESR10EZPD1203 esr-e.pdf
ESR10EZPD1203
Виробник: Rohm Semiconductor
Description: RES 120K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
на замовлення 4850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+16.26 грн
42+7.99 грн
52+6.36 грн
61+5.10 грн
100+4.42 грн
250+3.73 грн
500+3.33 грн
1000+2.97 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
ESR18EZPD1203 esr-e.pdf
ESR18EZPD1203
Виробник: Rohm Semiconductor
Description: RES 120K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+3.58 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ESR18EZPD1203 esr-e.pdf
ESR18EZPD1203
Виробник: Rohm Semiconductor
Description: RES 120K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+19.68 грн
34+9.81 грн
100+5.87 грн
1000+3.84 грн
2500+3.46 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SFR03EZPF4872 sfr-e.pdf
SFR03EZPF4872
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 48.7 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.40 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SFR03EZPF4872 sfr-e.pdf
SFR03EZPF4872
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 48.7 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+10.27 грн
68+4.86 грн
102+3.26 грн
119+2.61 грн
500+1.87 грн
1000+1.65 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SDR03EZPF4871 sdr-e.pdf
SDR03EZPF4871
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 4.87 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.86 грн
10000+1.62 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SDR03EZPF4871 sdr-e.pdf
SDR03EZPF4871
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 4.87 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.83 грн
52+6.43 грн
77+4.33 грн
100+3.47 грн
500+2.50 грн
1000+2.20 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SDR03EZPF4873 sdr-e.pdf
SDR03EZPF4873
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 487 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.86 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SDR03EZPF4873 sdr-e.pdf
SDR03EZPF4873
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 487 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.83 грн
52+6.43 грн
77+4.33 грн
100+3.47 грн
500+2.50 грн
1000+2.20 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
QS8M51HZGTR datasheet?p=QS8M51HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
QS8M51HZGTR
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Qualification: AEC-Q101
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QS8M51HZGTR datasheet?p=QS8M51HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
QS8M51HZGTR
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1319 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.39 грн
10+63.61 грн
100+42.24 грн
500+31.04 грн
1000+28.27 грн
Мінімальне замовлення: 4
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RQ1E070RPHZGTR
RQ1E070RPHZGTR
Виробник: Rohm Semiconductor
Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
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RQ1E070RPHZGTR
RQ1E070RPHZGTR
Виробник: Rohm Semiconductor
Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
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RQ1A070ZPHZGTR
RQ1A070ZPHZGTR
Виробник: Rohm Semiconductor
Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
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RQ1A070ZPHZGTR
RQ1A070ZPHZGTR
Виробник: Rohm Semiconductor
Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
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RQ1E050RPFRATR
Виробник: Rohm Semiconductor
Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
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RQ1E050RPFRATR
Виробник: Rohm Semiconductor
Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
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ESR10EZPD5102 esr-e.pdf
ESR10EZPD5102
Виробник: Rohm Semiconductor
Description: RES 51K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
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ESR10EZPD5102 esr-e.pdf
ESR10EZPD5102
Виробник: Rohm Semiconductor
Description: RES 51K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+16.26 грн
42+7.99 грн
52+6.36 грн
61+5.10 грн
100+4.42 грн
250+3.73 грн
500+3.36 грн
1000+2.97 грн
Мінімальне замовлення: 22
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RFN2VWM2STR datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STR
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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RFN2VWM2STR datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STR
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+41.93 грн
10+34.77 грн
Мінімальне замовлення: 9
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RFN2VWM2STFTR datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STFTR
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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RFN2VWM2STFTR datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STFTR
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.34 грн
10+41.78 грн
Мінімальне замовлення: 7
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ESR03EZPF4992 esr-e.pdf
ESR03EZPF4992
Виробник: Rohm Semiconductor
Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
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ESR03EZPF4992 esr-e.pdf
ESR03EZPF4992
Виробник: Rohm Semiconductor
Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
на замовлення 4275 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+11.98 грн
56+5.93 грн
101+3.29 грн
1000+1.94 грн
2500+1.74 грн
Мінімальне замовлення: 29
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ESR03EZPD4992 esr-e.pdf
ESR03EZPD4992
Виробник: Rohm Semiconductor
Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
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ESR03EZPD4992 esr-e.pdf
ESR03EZPD4992
Виробник: Rohm Semiconductor
Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
на замовлення 4790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+16.26 грн
39+8.49 грн
57+5.87 грн
100+4.74 грн
500+3.48 грн
1000+3.08 грн
Мінімальне замовлення: 22
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R6004KNXC7G r6004knx-e.pdf
Виробник: Rohm Semiconductor
Description: 600V 4A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+171.13 грн
10+136.78 грн
100+108.90 грн
500+86.48 грн
1000+73.37 грн
Мінімальне замовлення: 2
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R6007KND3TL1
R6007KND3TL1
Виробник: Rohm Semiconductor
Description: NCH 600V 7A TO-252, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6007KND3TL1
R6007KND3TL1
Виробник: Rohm Semiconductor
Description: NCH 600V 7A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6009KND3TL1 datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6009KND3TL1
Виробник: Rohm Semiconductor
Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+52.04 грн
Мінімальне замовлення: 2500
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R6009KND3TL1 datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6009KND3TL1
Виробник: Rohm Semiconductor
Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+165.14 грн
10+106.70 грн
100+75.01 грн
500+56.39 грн
1000+55.46 грн
Мінімальне замовлення: 3
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BR24G32F-3AGTE2 datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G32F-3AGTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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BR24G32F-3AGTE2 datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G32F-3AGTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 2176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+25.67 грн
15+22.99 грн
25+22.44 грн
50+20.65 грн
100+20.20 грн
250+19.62 грн
500+18.86 грн
1000+18.43 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BR24G32FJ-3AGTE2 br24g32-3a-e.pdf
BR24G32FJ-3AGTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
BR24G32FJ-3AGTE2 br24g32-3a-e.pdf
BR24G32FJ-3AGTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.49 грн
25+29.63 грн
50+27.25 грн
100+26.65 грн
250+25.88 грн
500+24.88 грн
1000+24.29 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
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