Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103042) > Сторінка 969 з 1718

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QS8M51HZGTR QS8M51HZGTR Rohm Semiconductor datasheet?p=QS8M51HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N/P-CH 100V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1269 шт:
термін постачання 21-31 дні (днів)
4+103.27 грн
10+62.68 грн
100+41.62 грн
500+30.57 грн
1000+27.85 грн
Мінімальне замовлення: 4
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RQ1E070RPHZGTR RQ1E070RPHZGTR Rohm Semiconductor Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
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RQ1E070RPHZGTR RQ1E070RPHZGTR Rohm Semiconductor Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
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RQ1A070ZPHZGTR RQ1A070ZPHZGTR Rohm Semiconductor Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
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RQ1A070ZPHZGTR RQ1A070ZPHZGTR Rohm Semiconductor Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
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RQ1E050RPFRATR Rohm Semiconductor Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
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RQ1E050RPFRATR Rohm Semiconductor Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
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ESR10EZPD5102 ESR10EZPD5102 Rohm Semiconductor esr-e.pdf Description: RES 51K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
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ESR10EZPD5102 ESR10EZPD5102 Rohm Semiconductor esr-e.pdf Description: RES 51K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)
22+14.86 грн
43+7.16 грн
53+5.73 грн
62+4.60 грн
100+3.97 грн
250+3.35 грн
500+2.95 грн
1000+2.67 грн
Мінімальне замовлення: 22
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RFN2VWM2STR RFN2VWM2STR Rohm Semiconductor datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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RFN2VWM2STR RFN2VWM2STR Rohm Semiconductor datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
9+38.33 грн
10+31.79 грн
Мінімальне замовлення: 9
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RFN2VWM2STFTR RFN2VWM2STFTR Rohm Semiconductor datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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RFN2VWM2STFTR RFN2VWM2STFTR Rohm Semiconductor datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
7+46.94 грн
10+38.20 грн
Мінімальне замовлення: 7
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ESR03EZPF4992 ESR03EZPF4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
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ESR03EZPF4992 ESR03EZPF4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
на замовлення 4275 шт:
термін постачання 21-31 дні (днів)
29+10.95 грн
56+5.42 грн
101+3.01 грн
1000+1.77 грн
2500+1.59 грн
Мінімальне замовлення: 29
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ESR03EZPD4992 ESR03EZPD4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
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ESR03EZPD4992 ESR03EZPD4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
на замовлення 4790 шт:
термін постачання 21-31 дні (днів)
22+14.86 грн
39+7.76 грн
57+5.36 грн
100+4.33 грн
500+3.18 грн
1000+2.82 грн
Мінімальне замовлення: 22
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R6004KNXC7G Rohm Semiconductor r6004knx-e.pdf Description: 600V 4A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+156.47 грн
10+125.06 грн
100+99.57 грн
500+79.06 грн
1000+67.09 грн
Мінімальне замовлення: 2
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R6007KND3TL1 R6007KND3TL1 Rohm Semiconductor Description: NCH 600V 7A TO-252, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6007KND3TL1 R6007KND3TL1 Rohm Semiconductor Description: NCH 600V 7A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6009KND3TL1 R6009KND3TL1 Rohm Semiconductor datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+47.58 грн
Мінімальне замовлення: 2500
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R6009KND3TL1 R6009KND3TL1 Rohm Semiconductor datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
3+150.99 грн
10+97.56 грн
100+68.58 грн
500+51.56 грн
1000+50.71 грн
Мінімальне замовлення: 3
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BR24G32F-3AGTE2 BR24G32F-3AGTE2 Rohm Semiconductor datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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BR24G32F-3AGTE2 BR24G32F-3AGTE2 Rohm Semiconductor datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 2176 шт:
термін постачання 21-31 дні (днів)
14+23.47 грн
15+21.02 грн
25+20.52 грн
50+18.88 грн
100+18.47 грн
250+17.94 грн
500+17.25 грн
1000+16.85 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BR24G32FJ-3AGTE2 BR24G32FJ-3AGTE2 Rohm Semiconductor br24g32-3a-e.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
BR24G32FJ-3AGTE2 BR24G32FJ-3AGTE2 Rohm Semiconductor br24g32-3a-e.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)
11+27.87 грн
25+27.09 грн
50+24.91 грн
100+24.37 грн
250+23.66 грн
500+22.74 грн
1000+22.21 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
VS6V5UA1VWMTFTR VS6V5UA1VWMTFTR Rohm Semiconductor datasheet?p=VS6V5UA1VWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 6.5V 200W, COMPACT AND HIGHLY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+14.85 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
VS6V5UA1VWMTFTR VS6V5UA1VWMTFTR Rohm Semiconductor datasheet?p=VS6V5UA1VWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 6.5V 200W, COMPACT AND HIGHLY RE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
8+43.81 грн
10+36.24 грн
100+25.21 грн
500+18.47 грн
1000+15.01 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
RS3E130ATTB1 RS3E130ATTB1 Rohm Semiconductor rs3e130attb-e.pdf Description: PCH -30V -13A POWER MOSFET : RS3
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+64.00 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RS3E130ATTB1 RS3E130ATTB1 Rohm Semiconductor rs3e130attb-e.pdf Description: PCH -30V -13A POWER MOSFET : RS3
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 15 V
на замовлення 7261 шт:
термін постачання 21-31 дні (днів)
3+141.60 грн
10+113.53 грн
100+90.37 грн
500+71.76 грн
1000+60.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCR006YRTF1500 MCR006YRTF1500 Rohm Semiconductor MCR006YRT_SeriesSpec.pdf Description: RES SMD 150 OHM 1% 1/20W 0201
Power (Watts): 0.05W, 1/20W
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: ±250ppm/°C
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0201
Height - Seated (Max): 0.010" (0.26mm)
Resistance: 150 Ohms
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MCR006YRTF1500 MCR006YRTF1500 Rohm Semiconductor MCR006YRT_SeriesSpec.pdf Description: RES SMD 150 OHM 1% 1/20W 0201
Power (Watts): 0.05W, 1/20W
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: ±250ppm/°C
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0201
Height - Seated (Max): 0.010" (0.26mm)
Resistance: 150 Ohms
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RBR3L40ADDTE25 RBR3L40ADDTE25 Rohm Semiconductor datasheet?p=RBR3L40ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+18.14 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
RBR3L40ADDTE25 RBR3L40ADDTE25 Rohm Semiconductor datasheet?p=RBR3L40ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 1545 шт:
термін постачання 21-31 дні (днів)
7+48.50 грн
10+39.55 грн
100+27.52 грн
500+20.17 грн
Мінімальне замовлення: 7
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ESR10EZPD2210 ESR10EZPD2210 Rohm Semiconductor Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 221 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+2.36 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ESR10EZPD2210 ESR10EZPD2210 Rohm Semiconductor Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 221 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
15+21.12 грн
19+16.65 грн
50+8.77 грн
100+6.10 грн
500+3.69 грн
1000+2.56 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
RB088BM100TL RB088BM100TL Rohm Semiconductor datasheet?p=RB088BM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 100V 10A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+41.55 грн
5000+37.72 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RB088BM100TL RB088BM100TL Rohm Semiconductor datasheet?p=RB088BM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 100V 10A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 11908 шт:
термін постачання 21-31 дні (днів)
3+144.73 грн
10+89.20 грн
100+60.50 грн
500+45.26 грн
1000+41.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LTR10EZPF1R20 LTR10EZPF1R20 Rohm Semiconductor ltr-e.pdf Description: RES SMD 1.2 OHM 1% 1W 0805 WIDE
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 Ohms
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LTR10EZPF1R20 LTR10EZPF1R20 Rohm Semiconductor ltr-e.pdf Description: RES SMD 1.2 OHM 1% 1W 0805 WIDE
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 Ohms
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
14+23.47 грн
25+12.28 грн
50+8.39 грн
100+6.78 грн
500+4.98 грн
1000+4.41 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BD5333G-TR BD5333G-TR Rohm Semiconductor datasheet?p=BD5333G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.3V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+13.96 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BD5333G-TR BD5333G-TR Rohm Semiconductor datasheet?p=BD5333G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.3V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
на замовлення 5975 шт:
термін постачання 21-31 дні (днів)
10+32.86 грн
14+21.70 грн
25+19.35 грн
100+15.74 грн
250+14.59 грн
500+13.90 грн
1000+13.10 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BD5331FVE-TR BD5331FVE-TR Rohm Semiconductor datasheet?p=BD5223FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.1V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
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BD5332FVE-TR BD5332FVE-TR Rohm Semiconductor datasheet?p=BD5223FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.2V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
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BD5336FVE-TR BD5336FVE-TR Rohm Semiconductor datasheet?p=BD5223FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.6V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
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BD5337FVE-TR BD5337FVE-TR Rohm Semiconductor datasheet?p=BD5223FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.7V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
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BD5339FVE-TR BD5339FVE-TR Rohm Semiconductor datasheet?p=BD5223FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.9V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
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BD9G500UEFJ-LAE2 BD9G500UEFJ-LAE2 Rohm Semiconductor datasheet?p=BD9G500UEFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 5A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 650kHz
Voltage - Input (Max): 76V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 73.72V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
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BD9G500UEFJ-LAE2 BD9G500UEFJ-LAE2 Rohm Semiconductor datasheet?p=BD9G500UEFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 5A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 650kHz
Voltage - Input (Max): 76V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 73.72V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
на замовлення 2339 шт:
термін постачання 21-31 дні (днів)
1+324.67 грн
10+237.99 грн
25+219.32 грн
100+186.53 грн
250+177.33 грн
500+171.79 грн
1000+164.48 грн
В кошику  од. на суму  грн.
ESR10EZPD3902 ESR10EZPD3902 Rohm Semiconductor esr-e.pdf Description: RES 39K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
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ESR10EZPD3902 ESR10EZPD3902 Rohm Semiconductor esr-e.pdf Description: RES 39K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
на замовлення 4995 шт:
термін постачання 21-31 дні (днів)
18+17.99 грн
34+9.04 грн
100+5.24 грн
1000+3.20 грн
2500+2.78 грн
Мінімальне замовлення: 18
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ESR03EZPF3012 ESR03EZPF3012 Rohm Semiconductor Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30.1 kOhms
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
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ESR03EZPF3012 ESR03EZPF3012 Rohm Semiconductor Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30.1 kOhms
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
27+11.73 грн
54+5.65 грн
80+3.78 грн
100+3.03 грн
500+2.17 грн
1000+1.91 грн
Мінімальне замовлення: 27
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SFR03EZPF3012 SFR03EZPF3012 Rohm Semiconductor sfr-e.pdf Description: RES SMD 30.1K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30.1 kOhms
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RB-D22120TB32 RB-D22120TB32 Rohm Semiconductor FEBL22120RB.pdf Description: EVAL BOARD FOR ML22120
Packaging: Bulk
Function: Automotive
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ML22120
Supplied Contents: Board(s)
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8282.56 грн
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BU7266FV-E2 BU7266FV-E2 Rohm Semiconductor datasheet?p=BU7266FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC CMOS 2 CIRCUIT 8SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 700nA
Slew Rate: 0.0024V/µs
Gain Bandwidth Product: 4 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SSOP-B
Number of Circuits: 2
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
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BU7266FV-E2 BU7266FV-E2 Rohm Semiconductor datasheet?p=BU7266FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC CMOS 2 CIRCUIT 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 700nA
Slew Rate: 0.0024V/µs
Gain Bandwidth Product: 4 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SSOP-B
Number of Circuits: 2
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)
6+52.42 грн
10+36.09 грн
25+32.48 грн
100+26.71 грн
250+24.93 грн
500+23.85 грн
1000+22.58 грн
Мінімальне замовлення: 6
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BU7242SNUX-TR BU7242SNUX-TR Rohm Semiconductor datasheet?p=BU7242SNUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC CMOS 2 CIRCUIT VSON008X2030
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 105°C
Current - Supply: 180µA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: VSON008X2030
Number of Circuits: 2
Current - Output / Channel: 12 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
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BU7242SNUX-TR BU7242SNUX-TR Rohm Semiconductor datasheet?p=BU7242SNUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC CMOS 2 CIRCUIT VSON008X2030
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 105°C
Current - Supply: 180µA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: VSON008X2030
Number of Circuits: 2
Current - Output / Channel: 12 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 3945 шт:
термін постачання 21-31 дні (днів)
6+59.46 грн
10+41.13 грн
25+37.07 грн
100+30.56 грн
250+28.55 грн
500+27.34 грн
1000+25.91 грн
Мінімальне замовлення: 6
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BU7264F-E2 BU7264F-E2 Rohm Semiconductor datasheet?p=BU7264F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC CMOS 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.1mA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 12 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+28.66 грн
Мінімальне замовлення: 2500
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QS8M51HZGTR datasheet?p=QS8M51HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
QS8M51HZGTR
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1269 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.27 грн
10+62.68 грн
100+41.62 грн
500+30.57 грн
1000+27.85 грн
Мінімальне замовлення: 4
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RQ1E070RPHZGTR
RQ1E070RPHZGTR
Виробник: Rohm Semiconductor
Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
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RQ1E070RPHZGTR
RQ1E070RPHZGTR
Виробник: Rohm Semiconductor
Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
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RQ1A070ZPHZGTR
RQ1A070ZPHZGTR
Виробник: Rohm Semiconductor
Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
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RQ1A070ZPHZGTR
RQ1A070ZPHZGTR
Виробник: Rohm Semiconductor
Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
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RQ1E050RPFRATR
Виробник: Rohm Semiconductor
Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
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RQ1E050RPFRATR
Виробник: Rohm Semiconductor
Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
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ESR10EZPD5102 esr-e.pdf
ESR10EZPD5102
Виробник: Rohm Semiconductor
Description: RES 51K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
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ESR10EZPD5102 esr-e.pdf
ESR10EZPD5102
Виробник: Rohm Semiconductor
Description: RES 51K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+14.86 грн
43+7.16 грн
53+5.73 грн
62+4.60 грн
100+3.97 грн
250+3.35 грн
500+2.95 грн
1000+2.67 грн
Мінімальне замовлення: 22
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RFN2VWM2STR datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STR
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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RFN2VWM2STR datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STR
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.33 грн
10+31.79 грн
Мінімальне замовлення: 9
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RFN2VWM2STFTR datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STFTR
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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RFN2VWM2STFTR datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STFTR
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+46.94 грн
10+38.20 грн
Мінімальне замовлення: 7
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ESR03EZPF4992 esr-e.pdf
ESR03EZPF4992
Виробник: Rohm Semiconductor
Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
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ESR03EZPF4992 esr-e.pdf
ESR03EZPF4992
Виробник: Rohm Semiconductor
Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
на замовлення 4275 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+10.95 грн
56+5.42 грн
101+3.01 грн
1000+1.77 грн
2500+1.59 грн
Мінімальне замовлення: 29
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ESR03EZPD4992 esr-e.pdf
ESR03EZPD4992
Виробник: Rohm Semiconductor
Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
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ESR03EZPD4992 esr-e.pdf
ESR03EZPD4992
Виробник: Rohm Semiconductor
Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
на замовлення 4790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+14.86 грн
39+7.76 грн
57+5.36 грн
100+4.33 грн
500+3.18 грн
1000+2.82 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
R6004KNXC7G r6004knx-e.pdf
Виробник: Rohm Semiconductor
Description: 600V 4A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+156.47 грн
10+125.06 грн
100+99.57 грн
500+79.06 грн
1000+67.09 грн
Мінімальне замовлення: 2
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R6007KND3TL1
R6007KND3TL1
Виробник: Rohm Semiconductor
Description: NCH 600V 7A TO-252, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6007KND3TL1
R6007KND3TL1
Виробник: Rohm Semiconductor
Description: NCH 600V 7A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6009KND3TL1 datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6009KND3TL1
Виробник: Rohm Semiconductor
Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+47.58 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
R6009KND3TL1 datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6009KND3TL1
Виробник: Rohm Semiconductor
Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.99 грн
10+97.56 грн
100+68.58 грн
500+51.56 грн
1000+50.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BR24G32F-3AGTE2 datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G32F-3AGTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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BR24G32F-3AGTE2 datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G32F-3AGTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 2176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.47 грн
15+21.02 грн
25+20.52 грн
50+18.88 грн
100+18.47 грн
250+17.94 грн
500+17.25 грн
1000+16.85 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BR24G32FJ-3AGTE2 br24g32-3a-e.pdf
BR24G32FJ-3AGTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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BR24G32FJ-3AGTE2 br24g32-3a-e.pdf
BR24G32FJ-3AGTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+27.87 грн
25+27.09 грн
50+24.91 грн
100+24.37 грн
250+23.66 грн
500+22.74 грн
1000+22.21 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
VS6V5UA1VWMTFTR datasheet?p=VS6V5UA1VWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS6V5UA1VWMTFTR
Виробник: Rohm Semiconductor
Description: 6.5V 200W, COMPACT AND HIGHLY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.85 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
VS6V5UA1VWMTFTR datasheet?p=VS6V5UA1VWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS6V5UA1VWMTFTR
Виробник: Rohm Semiconductor
Description: 6.5V 200W, COMPACT AND HIGHLY RE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.81 грн
10+36.24 грн
100+25.21 грн
500+18.47 грн
1000+15.01 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
RS3E130ATTB1 rs3e130attb-e.pdf
RS3E130ATTB1
Виробник: Rohm Semiconductor
Description: PCH -30V -13A POWER MOSFET : RS3
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+64.00 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RS3E130ATTB1 rs3e130attb-e.pdf
RS3E130ATTB1
Виробник: Rohm Semiconductor
Description: PCH -30V -13A POWER MOSFET : RS3
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 15 V
на замовлення 7261 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.60 грн
10+113.53 грн
100+90.37 грн
500+71.76 грн
1000+60.89 грн
Мінімальне замовлення: 3
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MCR006YRTF1500 MCR006YRT_SeriesSpec.pdf
MCR006YRTF1500
Виробник: Rohm Semiconductor
Description: RES SMD 150 OHM 1% 1/20W 0201
Power (Watts): 0.05W, 1/20W
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: ±250ppm/°C
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0201
Height - Seated (Max): 0.010" (0.26mm)
Resistance: 150 Ohms
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MCR006YRTF1500 MCR006YRT_SeriesSpec.pdf
MCR006YRTF1500
Виробник: Rohm Semiconductor
Description: RES SMD 150 OHM 1% 1/20W 0201
Power (Watts): 0.05W, 1/20W
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: ±250ppm/°C
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0201
Height - Seated (Max): 0.010" (0.26mm)
Resistance: 150 Ohms
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RBR3L40ADDTE25 datasheet?p=RBR3L40ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR3L40ADDTE25
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+18.14 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
RBR3L40ADDTE25 datasheet?p=RBR3L40ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR3L40ADDTE25
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 1545 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+48.50 грн
10+39.55 грн
100+27.52 грн
500+20.17 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ESR10EZPD2210
ESR10EZPD2210
Виробник: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 221 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+2.36 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ESR10EZPD2210
ESR10EZPD2210
Виробник: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 221 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.12 грн
19+16.65 грн
50+8.77 грн
100+6.10 грн
500+3.69 грн
1000+2.56 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
RB088BM100TL datasheet?p=RB088BM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088BM100TL
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 10A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+41.55 грн
5000+37.72 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RB088BM100TL datasheet?p=RB088BM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088BM100TL
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 10A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 11908 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.73 грн
10+89.20 грн
100+60.50 грн
500+45.26 грн
1000+41.55 грн
Мінімальне замовлення: 3
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LTR10EZPF1R20 ltr-e.pdf
LTR10EZPF1R20
Виробник: Rohm Semiconductor
Description: RES SMD 1.2 OHM 1% 1W 0805 WIDE
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 Ohms
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LTR10EZPF1R20 ltr-e.pdf
LTR10EZPF1R20
Виробник: Rohm Semiconductor
Description: RES SMD 1.2 OHM 1% 1W 0805 WIDE
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 Ohms
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.47 грн
25+12.28 грн
50+8.39 грн
100+6.78 грн
500+4.98 грн
1000+4.41 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BD5333G-TR datasheet?p=BD5333G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5333G-TR
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.3V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.96 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BD5333G-TR datasheet?p=BD5333G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5333G-TR
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.3V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
на замовлення 5975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.86 грн
14+21.70 грн
25+19.35 грн
100+15.74 грн
250+14.59 грн
500+13.90 грн
1000+13.10 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BD5331FVE-TR datasheet?p=BD5223FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5331FVE-TR
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.1V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
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BD5332FVE-TR datasheet?p=BD5223FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5332FVE-TR
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.2V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
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BD5336FVE-TR datasheet?p=BD5223FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5336FVE-TR
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.6V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
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BD5337FVE-TR datasheet?p=BD5223FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5337FVE-TR
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.7V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
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BD5339FVE-TR datasheet?p=BD5223FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5339FVE-TR
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.9V
Supplier Device Package: 5-VSOF
DigiKey Programmable: Not Verified
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BD9G500UEFJ-LAE2 datasheet?p=BD9G500UEFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9G500UEFJ-LAE2
Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 5A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 650kHz
Voltage - Input (Max): 76V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 73.72V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
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BD9G500UEFJ-LAE2 datasheet?p=BD9G500UEFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9G500UEFJ-LAE2
Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 5A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 650kHz
Voltage - Input (Max): 76V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 73.72V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
на замовлення 2339 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+324.67 грн
10+237.99 грн
25+219.32 грн
100+186.53 грн
250+177.33 грн
500+171.79 грн
1000+164.48 грн
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ESR10EZPD3902 esr-e.pdf
ESR10EZPD3902
Виробник: Rohm Semiconductor
Description: RES 39K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
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ESR10EZPD3902 esr-e.pdf
ESR10EZPD3902
Виробник: Rohm Semiconductor
Description: RES 39K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
на замовлення 4995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+17.99 грн
34+9.04 грн
100+5.24 грн
1000+3.20 грн
2500+2.78 грн
Мінімальне замовлення: 18
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ESR03EZPF3012
ESR03EZPF3012
Виробник: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30.1 kOhms
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
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ESR03EZPF3012
ESR03EZPF3012
Виробник: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30.1 kOhms
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.73 грн
54+5.65 грн
80+3.78 грн
100+3.03 грн
500+2.17 грн
1000+1.91 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SFR03EZPF3012 sfr-e.pdf
SFR03EZPF3012
Виробник: Rohm Semiconductor
Description: RES SMD 30.1K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30.1 kOhms
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RB-D22120TB32 FEBL22120RB.pdf
RB-D22120TB32
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR ML22120
Packaging: Bulk
Function: Automotive
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ML22120
Supplied Contents: Board(s)
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8282.56 грн
В кошику  од. на суму  грн.
BU7266FV-E2 datasheet?p=BU7266FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7266FV-E2
Виробник: Rohm Semiconductor
Description: IC CMOS 2 CIRCUIT 8SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 700nA
Slew Rate: 0.0024V/µs
Gain Bandwidth Product: 4 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SSOP-B
Number of Circuits: 2
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
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BU7266FV-E2 datasheet?p=BU7266FV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7266FV-E2
Виробник: Rohm Semiconductor
Description: IC CMOS 2 CIRCUIT 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 700nA
Slew Rate: 0.0024V/µs
Gain Bandwidth Product: 4 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SSOP-B
Number of Circuits: 2
Current - Output / Channel: 4 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+52.42 грн
10+36.09 грн
25+32.48 грн
100+26.71 грн
250+24.93 грн
500+23.85 грн
1000+22.58 грн
Мінімальне замовлення: 6
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BU7242SNUX-TR datasheet?p=BU7242SNUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7242SNUX-TR
Виробник: Rohm Semiconductor
Description: IC CMOS 2 CIRCUIT VSON008X2030
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 105°C
Current - Supply: 180µA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: VSON008X2030
Number of Circuits: 2
Current - Output / Channel: 12 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
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BU7242SNUX-TR datasheet?p=BU7242SNUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7242SNUX-TR
Виробник: Rohm Semiconductor
Description: IC CMOS 2 CIRCUIT VSON008X2030
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 105°C
Current - Supply: 180µA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: VSON008X2030
Number of Circuits: 2
Current - Output / Channel: 12 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 3945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.46 грн
10+41.13 грн
25+37.07 грн
100+30.56 грн
250+28.55 грн
500+27.34 грн
1000+25.91 грн
Мінімальне замовлення: 6
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BU7264F-E2 datasheet?p=BU7264F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7264F-E2
Виробник: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.1mA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 12 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+28.66 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
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