Результат пошуку "22n50" : > 120
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
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AOTF22N50 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 500V 22A TO220-3FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V |
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AOTF22N50L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 22A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V |
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| CNX722N50005B | Visual Communications Company - VCC |
Description: 22MM GREEN 5V SCREW BLOCK Packaging: Bulk Current: 20mA Voltage: 5V Type: LED Millicandela Rating: 1050mcd Lens Color: Green Ingress Protection: IP67, NEMA 6P Ratings: DC Panel Cutout Dimensions: 0.88" (22.35mm) Lens Transparency: Diffused Lamp Color: Green Panel Cutout Shape: Round Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 25.60mm Dia |
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| CNX722N50005T | Visual Communications Company - VCC |
Description: 22MM GREEN 5V SOLDER TERMINALS Packaging: Bulk Current: 20mA Voltage: 5V Type: LED Millicandela Rating: 1050mcd Termination Style: Solder Lug Lens Color: Green Ingress Protection: IP67, NEMA 6P Ratings: DC Panel Cutout Dimensions: 0.88" (22.35mm) Lens Transparency: Diffused Lamp Color: Green Panel Cutout Shape: Round Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 25.60mm Dia |
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| CNX722N50005W | Visual Communications Company - VCC |
Description: 22MM GREEN 5V WIRES Packaging: Bulk Current: 20mA Voltage: 5V Type: LED Millicandela Rating: 1050mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Green Ingress Protection: IP67, NEMA 6P Ratings: DC Panel Cutout Dimensions: 0.88" (22.35mm) Lens Transparency: Diffused Lamp Color: Green Panel Cutout Shape: Round Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 25.60mm Dia |
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| CNX722N50012B | Visual Communications Company - VCC |
Description: 22MM GREEN 12V SCREW BLOCK Packaging: Bulk Current: 20mA Voltage: 12V Type: LED Millicandela Rating: 1050mcd Lens Color: Green Ingress Protection: IP67, NEMA 6P Ratings: DC Panel Cutout Dimensions: 0.88" (22.35mm) Lens Transparency: Diffused Lamp Color: Green Panel Cutout Shape: Round Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 25.60mm Dia |
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| CNX722N50012T | Visual Communications Company - VCC |
Description: 22MM GREEN 12V SOLDER TERMINALS Packaging: Bulk Current: 20mA Voltage: 12V Type: LED Millicandela Rating: 1050mcd Termination Style: Solder Lug Lens Color: Green Ingress Protection: IP67, NEMA 6P Ratings: DC Panel Cutout Dimensions: 0.88" (22.35mm) Lens Transparency: Diffused Lamp Color: Green Panel Cutout Shape: Round Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 25.60mm Dia |
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| CNX722N50012W | Visual Communications Company - VCC |
Description: 22MM GREEN 12V WIRES Packaging: Bulk Current: 20mA Voltage: 12V Type: LED Millicandela Rating: 1050mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Green Ingress Protection: IP67, NEMA 6P Ratings: DC Panel Cutout Dimensions: 0.88" (22.35mm) Lens Transparency: Diffused Lamp Color: Green Panel Cutout Shape: Round Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 25.60mm Dia |
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| CNX722N50024B | Visual Communications Company - VCC |
Description: 22MM GREEN 24V SCREW BLOCK Packaging: Bulk Current: 20mA Voltage: 24V Type: LED Millicandela Rating: 1050mcd Lens Color: Green Ingress Protection: IP67, NEMA 6P Ratings: DC Panel Cutout Dimensions: 0.88" (22.35mm) Lens Transparency: Diffused Lamp Color: Green Panel Cutout Shape: Round Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 25.60mm Dia |
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| CNX722N50024T | Visual Communications Company - VCC |
Description: 22MM GREEN 24V SOLDER TERMINALS Packaging: Bulk Current: 20mA Voltage: 24V Type: LED Millicandela Rating: 1050mcd Termination Style: Solder Lug Lens Color: Green Ingress Protection: IP67, NEMA 6P Ratings: DC Panel Cutout Dimensions: 0.88" (22.35mm) Lens Transparency: Diffused Lamp Color: Green Panel Cutout Shape: Round Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 25.60mm Dia |
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| CNX722N50024W | Visual Communications Company - VCC |
Description: 22MM GREEN 24V WIRES Packaging: Bulk Current: 20mA Voltage: 24V Type: LED Millicandela Rating: 1050mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Green Ingress Protection: IP67, NEMA 6P Ratings: DC Panel Cutout Dimensions: 0.88" (22.35mm) Lens Transparency: Diffused Lamp Color: Green Panel Cutout Shape: Round Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 25.60mm Dia |
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FDP22N50N | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.2A Power dissipation: 312.5W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced |
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FDP22N50N | ON Semiconductor |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Tube |
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IRFBA22N50A | Vishay |
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-273AA |
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IRFBA22N50APBF | Vishay |
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-273AA |
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IRFBA22N50APBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 24A SUPER-220 Packaging: Tube Package / Case: Super-220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 13.8A, 10V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SUPER-220™ (TO-273AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
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IRFP22N50A | Vishay Siliconix |
Description: MOSFET N-CH 500V 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V |
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IRFP22N50A | Vishay |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC |
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| IRFP22N50APBFXKMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 22A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V |
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IXFH22N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
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IXFH22N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| IXFH22N50P | Littelfuse |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 |
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IXFH22N50P | IXYS |
Description: MOSFET N-CH 500V 22A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V |
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IXFH22N50P | Littelfuse |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 |
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IXFV22N50P | IXYS |
Description: MOSFET N-CH 500V 22A PLUS220 Packaging: Tube Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: PLUS220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V |
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| IXFV22N50PS | IXYS |
Description: MOSFET N-CH 500V 22A PLUS-220SMD Packaging: Tube Package / Case: PLUS-220SMD Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: PLUS-220SMD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V |
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IXTH22N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
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IXTH22N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns кількість в упаковці: 1 шт |
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IXTH22N50P | Littelfuse |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AD |
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IXTQ22N50P | Littelfuse |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P |
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IXTV22N50P | IXYS |
Description: MOSFET N-CH 500V 22A PLUS220 Packaging: Tube Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: PLUS220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V |
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MC422N-50 | Amphenol Positronic |
Power to the Board |
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| MC422N-50 | Positronic Industries | MC422N-50 |
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R1122N501A-TR-FE | Nisshinbo Micro Devices Inc. |
Description: IC REG LINEAR 5V 150MA SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 170 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active PSRR: 80dB (1kHz) Voltage Dropout (Max): 0.26V @ 100mA Protection Features: Over Current |
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R1122N501A-TR-FE | Nisshinbo |
LDO Voltage Regulators Low Noise 150mA Voltage Regulator |
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R5F61622N50FPV | Renesas Electronics Corporation |
Description: IC MCU 32BIT 256KB FLSH 144LFQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 256KB (256K x 8) RAM Size: 24K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: H8SX Data Converters: A/D 8x10b, 6x16b; D/A 2x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: EBI/EMI, I2C, SCI, SmartCard Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 144-LFQFP (20x20) Part Status: Not For New Designs Number of I/O: 74 DigiKey Programmable: Not Verified |
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| R5F61622N50FPV | Renesas Electronics |
32-bit Microcontrollers - MCU MCU 3V 256K Pb-free 144-QFP |
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R5F61622N50LGV | Renesas Electronics Corporation |
Description: IC MCU 32BIT 256KB FLSH 145TFLGA Packaging: Tray Package / Case: 145-TFLGA Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 256KB (256K x 8) RAM Size: 24K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: H8SX Data Converters: A/D 8x10b, 6x16b; D/A 2x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: EBI/EMI, I2C, SCI, SmartCard Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 145-TFLGA (9x9) Part Status: Obsolete Number of I/O: 74 DigiKey Programmable: Not Verified |
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RDD022N50TL | Rohm Semiconductor |
Description: MOSFET N-CH 500V 2A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 5.4Ohm @ 1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 25 V |
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| RMK22N500KF | Vishay |
Res Thin Film 0202 500K Ohm 1% 0.05W(1/20W) ±5/±10ppm/C Pad SMD |
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RMK22N500KF | Vishay Sfernice |
Description: SFERNICE THIN FILMS Packaging: Tray Part Status: Active |
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RMK22N500RB | Vishay Sfernice |
Description: SFERNICE THIN FILMS Packaging: Tray Part Status: Active |
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RMK22N50KF | Vishay Sfernice |
Description: SFERNICE THIN FILMS Packaging: Tray Part Status: Active |
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RMK22N50RD | Vishay Sfernice |
Description: SFERNICE THIN FILMS Packaging: Tray Part Status: Active |
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RMK22N50RF | Vishay Sfernice |
Description: SFERNICE THIN FILMS Packaging: Tray Part Status: Active |
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RSK22N500KB | Vishay Sfernice |
Description: SFERNICE THIN FILMS Packaging: Tray Part Status: Active |
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RSK22N500KB0016 | Vishay Sfernice |
Description: SFERNICE THIN FILMS Packaging: Tray Part Status: Active |
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RSK22N500KF | Vishay Sfernice |
Description: SFERNICE THIN FILMS Packaging: Tray Part Status: Active |
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RSK22N500KF0016 | Vishay Sfernice |
Description: SFERNICE THIN FILMS Packaging: Tray Part Status: Active |
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RSK22N50RD | Vishay Sfernice |
Description: SFERNICE THIN FILMS Packaging: Tray Part Status: Active |
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SIHG22N50D-E3 | Vishay |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC |
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SIHG22N50D-E3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 22A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V |
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SIHG22N50D-E3 | Vishay / Siliconix |
MOSFET 500V Vds 30V Vgs TO-247AC |
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| SIHG22N50D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 67A; 315W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 67A Power dissipation: 315W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
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| SIHG22N50D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 67A; 315W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 67A Power dissipation: 315W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHG22N50D-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 22A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V |
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SIHG22N50D-GE3 | Vishay |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC |
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SSH22N50A | onsemi |
Description: MOSFET N-CH 500V 22A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 11A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V |
товар відсутній |
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| WML22N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 60A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 14.6nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| WML22N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 60A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 14.6nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
| AOTF22N50 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 22A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
Description: MOSFET N-CH 500V 22A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
товар відсутній
| AOTF22N50L |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 22A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
Description: MOSFET N-CH 500V 22A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
товар відсутній
| CNX722N50005B |
|
Виробник: Visual Communications Company - VCC
Description: 22MM GREEN 5V SCREW BLOCK
Packaging: Bulk
Current: 20mA
Voltage: 5V
Type: LED
Millicandela Rating: 1050mcd
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
Description: 22MM GREEN 5V SCREW BLOCK
Packaging: Bulk
Current: 20mA
Voltage: 5V
Type: LED
Millicandela Rating: 1050mcd
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
товар відсутній
| CNX722N50005T |
|
Виробник: Visual Communications Company - VCC
Description: 22MM GREEN 5V SOLDER TERMINALS
Packaging: Bulk
Current: 20mA
Voltage: 5V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Solder Lug
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
Description: 22MM GREEN 5V SOLDER TERMINALS
Packaging: Bulk
Current: 20mA
Voltage: 5V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Solder Lug
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
товар відсутній
| CNX722N50005W |
|
Виробник: Visual Communications Company - VCC
Description: 22MM GREEN 5V WIRES
Packaging: Bulk
Current: 20mA
Voltage: 5V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
Description: 22MM GREEN 5V WIRES
Packaging: Bulk
Current: 20mA
Voltage: 5V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
товар відсутній
| CNX722N50012B |
|
Виробник: Visual Communications Company - VCC
Description: 22MM GREEN 12V SCREW BLOCK
Packaging: Bulk
Current: 20mA
Voltage: 12V
Type: LED
Millicandela Rating: 1050mcd
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
Description: 22MM GREEN 12V SCREW BLOCK
Packaging: Bulk
Current: 20mA
Voltage: 12V
Type: LED
Millicandela Rating: 1050mcd
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
товар відсутній
| CNX722N50012T |
|
Виробник: Visual Communications Company - VCC
Description: 22MM GREEN 12V SOLDER TERMINALS
Packaging: Bulk
Current: 20mA
Voltage: 12V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Solder Lug
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
Description: 22MM GREEN 12V SOLDER TERMINALS
Packaging: Bulk
Current: 20mA
Voltage: 12V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Solder Lug
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
товар відсутній
| CNX722N50012W |
|
Виробник: Visual Communications Company - VCC
Description: 22MM GREEN 12V WIRES
Packaging: Bulk
Current: 20mA
Voltage: 12V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
Description: 22MM GREEN 12V WIRES
Packaging: Bulk
Current: 20mA
Voltage: 12V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
товар відсутній
| CNX722N50024B |
|
Виробник: Visual Communications Company - VCC
Description: 22MM GREEN 24V SCREW BLOCK
Packaging: Bulk
Current: 20mA
Voltage: 24V
Type: LED
Millicandela Rating: 1050mcd
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
Description: 22MM GREEN 24V SCREW BLOCK
Packaging: Bulk
Current: 20mA
Voltage: 24V
Type: LED
Millicandela Rating: 1050mcd
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
товар відсутній
| CNX722N50024T |
|
Виробник: Visual Communications Company - VCC
Description: 22MM GREEN 24V SOLDER TERMINALS
Packaging: Bulk
Current: 20mA
Voltage: 24V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Solder Lug
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
Description: 22MM GREEN 24V SOLDER TERMINALS
Packaging: Bulk
Current: 20mA
Voltage: 24V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Solder Lug
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
товар відсутній
| CNX722N50024W |
|
Виробник: Visual Communications Company - VCC
Description: 22MM GREEN 24V WIRES
Packaging: Bulk
Current: 20mA
Voltage: 24V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
Description: 22MM GREEN 24V WIRES
Packaging: Bulk
Current: 20mA
Voltage: 24V
Type: LED
Millicandela Rating: 1050mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ingress Protection: IP67, NEMA 6P
Ratings: DC
Panel Cutout Dimensions: 0.88" (22.35mm)
Lens Transparency: Diffused
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 25.60mm Dia
товар відсутній
| FDP22N50N |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDP22N50N |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| IRFBA22N50APBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 24A SUPER-220
Packaging: Tube
Package / Case: Super-220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13.8A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: MOSFET N-CH 500V 24A SUPER-220
Packaging: Tube
Package / Case: Super-220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13.8A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
товар відсутній
| IRFP22N50A |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Description: MOSFET N-CH 500V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товар відсутній
| IRFP22N50APBFXKMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Description: MOSFET N-CH 500V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товар відсутній
| IXFH22N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH22N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFH22N50P |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 22A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Description: MOSFET N-CH 500V 22A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товар відсутній
| IXFV22N50P |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товар відсутній
| IXFV22N50PS |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товар відсутній
| IXTH22N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
| IXTH22N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
| IXTV22N50P |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товар відсутній
| R1122N501A-TR-FE |
|
Виробник: Nisshinbo Micro Devices Inc.
Description: IC REG LINEAR 5V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 80dB (1kHz)
Voltage Dropout (Max): 0.26V @ 100mA
Protection Features: Over Current
Description: IC REG LINEAR 5V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 80dB (1kHz)
Voltage Dropout (Max): 0.26V @ 100mA
Protection Features: Over Current
товар відсутній
| R1122N501A-TR-FE |
|
Виробник: Nisshinbo
LDO Voltage Regulators Low Noise 150mA Voltage Regulator
LDO Voltage Regulators Low Noise 150mA Voltage Regulator
товар відсутній
| R5F61622N50FPV |
|
Виробник: Renesas Electronics Corporation
Description: IC MCU 32BIT 256KB FLSH 144LFQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 24K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: H8SX
Data Converters: A/D 8x10b, 6x16b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I2C, SCI, SmartCard
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LFQFP (20x20)
Part Status: Not For New Designs
Number of I/O: 74
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLSH 144LFQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 24K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: H8SX
Data Converters: A/D 8x10b, 6x16b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I2C, SCI, SmartCard
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LFQFP (20x20)
Part Status: Not For New Designs
Number of I/O: 74
DigiKey Programmable: Not Verified
товар відсутній
| R5F61622N50FPV |
|
Виробник: Renesas Electronics
32-bit Microcontrollers - MCU MCU 3V 256K Pb-free 144-QFP
32-bit Microcontrollers - MCU MCU 3V 256K Pb-free 144-QFP
товар відсутній
| R5F61622N50LGV |
|
Виробник: Renesas Electronics Corporation
Description: IC MCU 32BIT 256KB FLSH 145TFLGA
Packaging: Tray
Package / Case: 145-TFLGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 24K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: H8SX
Data Converters: A/D 8x10b, 6x16b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I2C, SCI, SmartCard
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 145-TFLGA (9x9)
Part Status: Obsolete
Number of I/O: 74
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLSH 145TFLGA
Packaging: Tray
Package / Case: 145-TFLGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 24K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: H8SX
Data Converters: A/D 8x10b, 6x16b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I2C, SCI, SmartCard
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 145-TFLGA (9x9)
Part Status: Obsolete
Number of I/O: 74
DigiKey Programmable: Not Verified
товар відсутній
| RDD022N50TL |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 500V 2A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.4Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 25 V
Description: MOSFET N-CH 500V 2A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.4Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 25 V
товар відсутній
| RMK22N500KF |
|
Виробник: Vishay
Res Thin Film 0202 500K Ohm 1% 0.05W(1/20W) ±5/±10ppm/C Pad SMD
Res Thin Film 0202 500K Ohm 1% 0.05W(1/20W) ±5/±10ppm/C Pad SMD
товар відсутній
| SIHG22N50D-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
Description: MOSFET N-CH 500V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
товар відсутній
| SIHG22N50D-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 67A; 315W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 67A
Power dissipation: 315W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 67A; 315W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 67A
Power dissipation: 315W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHG22N50D-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 67A; 315W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 67A
Power dissipation: 315W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 67A; 315W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 67A
Power dissipation: 315W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIHG22N50D-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
Description: MOSFET N-CH 500V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1938 pF @ 100 V
товар відсутній
| SSH22N50A |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 11A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Description: MOSFET N-CH 500V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 11A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
товар відсутній
| WML22N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| WML22N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній