Результат пошуку "BDV" : 124
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SI3458BDV-T1-E3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 10A Power dissipation: 3.3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 128mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||
| SI3459BDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A Kind of package: reel; tape Drain-source voltage: -60V Drain current: -2.9A On-state resistance: 288mΩ Type of transistor: P-MOSFET Power dissipation: 3.3W Polarisation: unipolar Gate charge: 12nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A Mounting: SMD Case: TSOP6 кількість в упаковці: 3000 шт |
товар відсутній |
||
| SI3493BDV-T1-E3 | VISHAY |
SI3493BDV-T1-E3 SMD P channel transistors |
товар відсутній |
||
| SI3493BDV-T1-GE3 | VISHAY |
SI3493BDV-T1-GE3 SMD P channel transistors |
товар відсутній |
| SI3458BDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI3459BDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 288mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Mounting: SMD
Case: TSOP6
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 288mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Mounting: SMD
Case: TSOP6
кількість в упаковці: 3000 шт
товар відсутній