Результат пошуку "F3808" : 55
Вид перегляду :
Мінімальне замовлення: 151
Мінімальне замовлення: 29
Мінімальне замовлення: 29
Мінімальне замовлення: 3
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 6
Мінімальне замовлення: 2
Мінімальне замовлення: 3
Мінімальне замовлення: 2
Мінімальне замовлення: 800
Мінімальне замовлення: 800
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRF3808PBF Код товару: 33009 |
IR |
![]() ![]() Uds,V: 75 V Idd,A: 140 A Rds(on), Ohm: 0,007 Ohm Ciss, pF/Qg, nC: 5310/150 Монтаж: THT |
у наявності: 34 шт
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AUIRF3808 | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
на замовлення 1792 шт: термін постачання 21-31 дні (днів) |
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DF38086RLP10V | Renesas |
![]() Packaging: Bulk Package / Case: 85-TFLGA Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14bSAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 85-TFLGA (7x7) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
на замовлення 368 шт: термін постачання 21-31 дні (днів) |
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DF38086RLP10WV | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 85-TFLGA Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 85-TFLGA (7x7) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
на замовлення 832 шт: термін постачання 21-31 дні (днів) |
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DF38086RW10WV | Renesas |
![]() Packaging: Bulk Package / Case: 80-TQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14bSAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-TQFP (12x12) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
на замовлення 379 шт: термін постачання 21-31 дні (днів) |
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IRF3808PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
на замовлення 62 шт: термін постачання 21-30 дні (днів) |
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IRF3808PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
на замовлення 1259 шт: термін постачання 21-31 дні (днів) |
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IRF3808PBF | Infineon Technologies |
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на замовлення 1210 шт: термін постачання 21-30 дні (днів) |
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IRF3808PBF | Infineon Technologies |
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на замовлення 2804 шт: термін постачання 21-31 дні (днів) |
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IRF3808SPBF | IR |
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на замовлення 10 шт: термін постачання 2-3 дні (днів) |
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IRF3808STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 550A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 588 шт: термін постачання 21-30 дні (днів) |
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IRF3808STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 550A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 588 шт: термін постачання 14-21 дні (днів) |
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IRF3808STRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IRF3808STRLPBF | Infineon Technologies |
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на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IRF3808STRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
на замовлення 2805 шт: термін постачання 21-31 дні (днів) |
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IRF3808STRLPBF | Infineon Technologies |
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на замовлення 1417 шт: термін постачання 21-30 дні (днів) |
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Транзистор польовий IRF3808PBF 140A 75V N-ch TO-220 |
на замовлення 2 шт: термін постачання 3 дні (днів) |
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ATF-38086-TR1 | HP | 02+; |
на замовлення 1100 шт: термін постачання 14-28 дні (днів) |
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IRF3808/PBF | IR |
на замовлення 2100 шт: термін постачання 14-28 дні (днів) |
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IRF3808L | IR | TO-262 |
на замовлення 1349 шт: термін постачання 14-28 дні (днів) |
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IRF3808S Код товару: 48224 |
Транзистори > Польові N-канальні |
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IRF3808SPBF Код товару: 129658 |
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IRF3808STRLPBF Код товару: 148871 |
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59112-F38-08-120LF | Amphenol ICC (FCI) |
![]() Packaging: Bag Color: Black Mounting Type: Through Hole Pitch: 0.079" (2.00mm) Row Spacing: 0.079" (2.000mm) Termination: Solder Contact Finish - Post (Mating): Gold Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm) Part Status: Active Number of Rows: 2 Number of Positions: 16 Length - Overall Pin: 0.752" (19.100mm) Length - Post (Mating): 0.181" (4.597mm) Length - Stack Height: 0.472" (11.989mm) Length - Tail: 0.098" (2.50mm) |
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59202-F38-08-120LF | Amphenol ICC (FCI) |
![]() Packaging: Bag Color: Black Mounting Type: Surface Mount Pitch: 0.079" (2.00mm) Row Spacing: 0.079" (2.000mm) Termination: Solder Contact Finish - Post (Mating): Gold Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm) Part Status: Active Number of Rows: 2 Number of Positions: 16 Length - Overall Pin: 0.685" (17.400mm) Length - Post (Mating): 0.213" (5.400mm) Length - Stack Height: 0.472" (11.989mm) |
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AUIRF3808 | Infineon Technologies |
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AUIRF3808S | Infineon Technologies |
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AUIRF3808S | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V |
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AUIRF3808STRL | Infineon Technologies |
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DF38086RH10V | Renesas |
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DF38086RH10V | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x14) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
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DF38086RH4V | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 4MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x14) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
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DF38086RLP4V | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 85-TFLGA Mounting Type: Surface Mount Speed: 4MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 85-TFLGA (7x7) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
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DF38086RW10V | Renesas |
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DF38086RW10V | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-TQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-TQFP (12x12) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
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DF38086RW10WV | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-TQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-TQFP (12x12) Number of I/O: 55 DigiKey Programmable: Not Verified |
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DF38086RW10WV | Renesas |
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DF38086RW4V | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-TQFP Mounting Type: Surface Mount Speed: 4MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-TQFP (12x12) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
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IRF3808LPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IRF3808PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 62 шт: термін постачання 14-21 дні (днів) |
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IRF3808S | Infineon Technologies |
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IRF3808SHR | International Rectifier HiRel Products |
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IRF3808SPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V |
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IRF3808SPBF | Infineon Technologies |
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IRF3808STRR | Infineon Technologies |
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IRF3808STRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 106A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF3808STRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 106A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRF3808STRRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IRF3808STRRPBF | Infineon Technologies |
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UPD70F3808GB-GAH-AX | Renesas |
UPD70F3808GB-GAH-AX NECHIEMCUBRC кількість в упаковці: 300 шт |
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V0603MHS03H | Littelfuse Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount, MLCV Operating Temperature: -55°C ~ 125°C (TA) Energy: 0.005J Part Status: Obsolete Number of Circuits: 1 Maximum AC Volts: 30 V Maximum DC Volts: 42 V Capacitance @ Frequency: 3 pF @ 1 MHz |
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V0603MHS03H | Littelfuse Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount, MLCV Operating Temperature: -55°C ~ 125°C (TA) Energy: 0.005J Part Status: Obsolete Number of Circuits: 1 Maximum AC Volts: 30 V Maximum DC Volts: 42 V Capacitance @ Frequency: 3 pF @ 1 MHz |
товар відсутній |
IRF3808PBF Код товару: 33009 |
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Виробник: IR
Транзистори > Польові N-канальні
Uds,V: 75 V
Idd,A: 140 A
Rds(on), Ohm: 0,007 Ohm
Ciss, pF/Qg, nC: 5310/150
Монтаж: THT
Транзистори > Польові N-канальні
Uds,V: 75 V
Idd,A: 140 A
Rds(on), Ohm: 0,007 Ohm
Ciss, pF/Qg, nC: 5310/150
Монтаж: THT
у наявності: 34 шт
Кількість | Ціна без ПДВ |
---|---|
1+ | 74 грн |
10+ | 68 грн |
AUIRF3808 |
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Виробник: International Rectifier
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 1792 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
151+ | 141.97 грн |
DF38086RLP10V |
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Виробник: Renesas
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Bulk
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Bulk
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 368 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 751 грн |
DF38086RLP10WV |
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Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Tray
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Tray
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 832 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 879.2 грн |
10+ | 778.17 грн |
25+ | 745.89 грн |
80+ | 616.74 грн |
230+ | 586.47 грн |
440+ | 548.63 грн |
DF38086RW10WV |
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Виробник: Renesas
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Bulk
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Bulk
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 379 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 751 грн |
IRF3808PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 62 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 140.51 грн |
10+ | 93.09 грн |
26+ | 87.96 грн |
IRF3808PBF | ![]() |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 75V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 1259 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 189.54 грн |
50+ | 146.79 грн |
100+ | 120.78 грн |
500+ | 95.91 грн |
1000+ | 81.38 грн |
IRF3808PBF | ![]() |
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Виробник: Infineon Technologies
MOSFETs MOSFT 75V 140A 7mOhm 150nC
MOSFETs MOSFT 75V 140A 7mOhm 150nC
на замовлення 1210 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 172.41 грн |
10+ | 143.24 грн |
100+ | 112.59 грн |
500+ | 97.11 грн |
1000+ | 82.33 грн |
2000+ | 78.81 грн |
5000+ | 76 грн |
IRF3808PBF | ![]() |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 75V 140A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 75V 140A 3-Pin(3+Tab) TO-220AB Tube
на замовлення 2804 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 57.96 грн |
IRF3808SPBF |
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Виробник: IR
Транз. Пол. БМ N-HEXFET D2PAK Udss=75V; Id=140A; Pdmax=330W; Rds=0,007 Ohm
Транз. Пол. БМ N-HEXFET D2PAK Udss=75V; Id=140A; Pdmax=330W; Rds=0,007 Ohm
на замовлення 10 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 188.03 грн |
10+ | 154.51 грн |
100+ | 140.46 грн |
IRF3808STRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 588 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 174.46 грн |
10+ | 86.5 грн |
28+ | 82.1 грн |
IRF3808STRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 588 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 209.35 грн |
10+ | 107.79 грн |
28+ | 98.52 грн |
IRF3808STRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 126.58 грн |
1600+ | 104.37 грн |
IRF3808STRLPBF |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 64.69 грн |
IRF3808STRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 2805 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 209.33 грн |
10+ | 169.55 грн |
100+ | 137.13 грн |
IRF3808STRLPBF |
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Виробник: Infineon Technologies
MOSFETs MOSFT 75V 105A 7mOhm 150nC
MOSFETs MOSFT 75V 105A 7mOhm 150nC
на замовлення 1417 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 201.96 грн |
10+ | 170.75 грн |
25+ | 147.78 грн |
100+ | 123.15 грн |
250+ | 119.63 грн |
800+ | 95 грн |
2400+ | 94.3 грн |
Транзистор польовий IRF3808PBF 140A 75V N-ch TO-220 |
на замовлення 2 шт:
термін постачання 3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 84.66 грн |
59112-F38-08-120LF |
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Виробник: Amphenol ICC (FCI)
Description: CONN HDR STACK
Packaging: Bag
Color: Black
Mounting Type: Through Hole
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.000mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 16
Length - Overall Pin: 0.752" (19.100mm)
Length - Post (Mating): 0.181" (4.597mm)
Length - Stack Height: 0.472" (11.989mm)
Length - Tail: 0.098" (2.50mm)
Description: CONN HDR STACK
Packaging: Bag
Color: Black
Mounting Type: Through Hole
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.000mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 16
Length - Overall Pin: 0.752" (19.100mm)
Length - Post (Mating): 0.181" (4.597mm)
Length - Stack Height: 0.472" (11.989mm)
Length - Tail: 0.098" (2.50mm)
товар відсутній
59202-F38-08-120LF |
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Виробник: Amphenol ICC (FCI)
Description: CONN HDR STACK SMD
Packaging: Bag
Color: Black
Mounting Type: Surface Mount
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.000mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 16
Length - Overall Pin: 0.685" (17.400mm)
Length - Post (Mating): 0.213" (5.400mm)
Length - Stack Height: 0.472" (11.989mm)
Description: CONN HDR STACK SMD
Packaging: Bag
Color: Black
Mounting Type: Surface Mount
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.000mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 16
Length - Overall Pin: 0.685" (17.400mm)
Length - Post (Mating): 0.213" (5.400mm)
Length - Stack Height: 0.472" (11.989mm)
товар відсутній
AUIRF3808 |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 75V 140A Automotive 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 75V 140A Automotive 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
AUIRF3808S |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK Tube
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK Tube
товар відсутній
AUIRF3808S |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
товар відсутній
AUIRF3808STRL |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
DF38086RH10V |
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Виробник: Renesas
MCU 16-bit H8/300H CISC 52KB Flash 2.5V/3.3V 80-Pin PQFP
MCU 16-bit H8/300H CISC 52KB Flash 2.5V/3.3V 80-Pin PQFP
товар відсутній
DF38086RH10V |
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Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x14)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x14)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
товар відсутній
DF38086RH4V |
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Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x14)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x14)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
товар відсутній
DF38086RLP4V |
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Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Tray
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Tray
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
товар відсутній
DF38086RW10V |
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Виробник: Renesas
MCU 16-bit H8/300H CISC 52KB Flash 2.5V/3.3V 80-Pin TQFP
MCU 16-bit H8/300H CISC 52KB Flash 2.5V/3.3V 80-Pin TQFP
товар відсутній
DF38086RW10V |
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Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
товар відсутній
DF38086RW10WV |
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Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Number of I/O: 55
DigiKey Programmable: Not Verified
товар відсутній
DF38086RW10WV |
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Виробник: Renesas
MCU 16-bit H8/300H CISC 52KB Flash 2.5V/3.3V 80-Pin TQFP
MCU 16-bit H8/300H CISC 52KB Flash 2.5V/3.3V 80-Pin TQFP
товар відсутній
DF38086RW4V |
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Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
товар відсутній
IRF3808LPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 106A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 75V 106A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IRF3808PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 62 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 168.62 грн |
10+ | 116.01 грн |
26+ | 105.55 грн |
500+ | 101.16 грн |
IRF3808S |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IRF3808SHR |
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Виробник: International Rectifier HiRel Products
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab)
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab)
товар відсутній
IRF3808SPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
товар відсутній
IRF3808SPBF |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK Tube
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK Tube
товар відсутній
IRF3808STRR |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IRF3808STRRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 106A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 106A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF3808STRRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 106A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 106A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
IRF3808STRRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IRF3808STRRPBF |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
UPD70F3808GB-GAH-AX |
товар відсутній
V0603MHS03H |
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Виробник: Littelfuse Inc.
Description: VARISTOR 135V 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount, MLCV
Operating Temperature: -55°C ~ 125°C (TA)
Energy: 0.005J
Part Status: Obsolete
Number of Circuits: 1
Maximum AC Volts: 30 V
Maximum DC Volts: 42 V
Capacitance @ Frequency: 3 pF @ 1 MHz
Description: VARISTOR 135V 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount, MLCV
Operating Temperature: -55°C ~ 125°C (TA)
Energy: 0.005J
Part Status: Obsolete
Number of Circuits: 1
Maximum AC Volts: 30 V
Maximum DC Volts: 42 V
Capacitance @ Frequency: 3 pF @ 1 MHz
товар відсутній
V0603MHS03H |
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Виробник: Littelfuse Inc.
Description: VARISTOR 135V 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount, MLCV
Operating Temperature: -55°C ~ 125°C (TA)
Energy: 0.005J
Part Status: Obsolete
Number of Circuits: 1
Maximum AC Volts: 30 V
Maximum DC Volts: 42 V
Capacitance @ Frequency: 3 pF @ 1 MHz
Description: VARISTOR 135V 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount, MLCV
Operating Temperature: -55°C ~ 125°C (TA)
Energy: 0.005J
Part Status: Obsolete
Number of Circuits: 1
Maximum AC Volts: 30 V
Maximum DC Volts: 42 V
Capacitance @ Frequency: 3 pF @ 1 MHz
товар відсутній