Продукція > SMC DIODE SOLUTIONS > Всі товари виробника SMC DIODE SOLUTIONS (7327) > Сторінка 107 з 123
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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S3M0040120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 223A Power dissipation: 130W Case: TOLL Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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S2M0120120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 66A Power dissipation: 156W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 212mΩ Mounting: THT Gate charge: 29.6nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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| S2M0120120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 66A Power dissipation: 156W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 212mΩ Mounting: SMD Gate charge: 29.6nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 29 шт: термін постачання 14-30 дні (днів) |
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| S2M0080120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 29A Pulsed drain current: 82A Power dissipation: 231W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 137mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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S3M0016120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 732W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 25mΩ Mounting: THT Gate charge: 287nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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S2M0160120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 40A Power dissipation: 130W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 0.3Ω Mounting: THT Gate charge: 26.5nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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S2M0016120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 140A Pulsed drain current: 314A Power dissipation: 714W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 16mΩ Mounting: THT Gate charge: 224nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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| SMBJ14ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMB; reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 25.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
| SMCJ12ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 5.0SMCJ12ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 13.3÷14.7V; 252A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 252A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 0.8mA Manufacturer series: 5.0SMCJ Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMBJ12ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: SMBJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
| SMCJ28ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷34.4V; 33.1A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 33.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SK26ATR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Leakage current: 1mA Max. forward impulse current: 50A Kind of package: reel; tape Capacitance: 0.25nF |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
| SK26TR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Leakage current: 0.5mA Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
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BZT52C5V6STR | SMC DIODE SOLUTIONS |
Category: SMD Zener diodesDescription: Diode: Zener; 0.6W; 5.6V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.6W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 6109 шт: термін постачання 14-30 дні (днів) |
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| 1.5KE250ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 237÷263V; 4.4A; unidirectional; DO201AD; reel Semiconductor structure: unidirectional Max. off-state voltage: 214V Case: DO201AD Max. forward impulse current: 4.4A Manufacturer series: 1.5KE Breakdown voltage: 237...263V Peak pulse power dissipation: 1.5kW Kind of package: reel Mounting: THT Type of diode: TVS Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE250CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 237÷263V; 4.4A; bidirectional; DO201AD; reel; 1.5kW Type of diode: TVS Max. off-state voltage: 214V Breakdown voltage: 237...263V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMAJ28ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMAJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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P4SMF100A | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 111÷123V; 1.2A; unidirectional; SOD123F; reel Type of diode: TVS Case: SOD123F Mounting: SMD Max. off-state voltage: 0.1kV Semiconductor structure: unidirectional Max. forward impulse current: 1.2A Kind of package: reel Leakage current: 1µA Breakdown voltage: 111...123V Peak pulse power dissipation: 0.4kW Manufacturer series: P4SMF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR4045WT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 40A; TO247AD; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 40A Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 0.8V Max. forward impulse current: 318A Leakage current: 1mA Capacitance: 1.1nF Kind of package: tube |
на замовлення 93 шт: термін постачання 14-30 дні (днів) |
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MBR4045CT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 40A; TO220AB; Ufmax: 0.78V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.78V Max. forward impulse current: 252A Leakage current: 1mA Capacitance: 1.1nF Kind of package: tube |
на замовлення 307 шт: термін постачання 14-30 дні (днів) |
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| MBR2060CT-1 | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 20A; TO262; Ufmax: 0.95V; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 20A Semiconductor structure: common cathode; double Case: TO262 Max. forward voltage: 0.95V Max. forward impulse current: 150A Kind of package: tube Leakage current: 1mA Capacitance: 0.4nF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR2060CTL | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 20A; TO220AB; Ufmax: 0.69V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.69V Max. forward impulse current: 150A Kind of package: tube Leakage current: 1mA Capacitance: 0.4nF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR2060CTP | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 20A; TO220AB; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.8V Max. forward impulse current: 150A Kind of package: tube Leakage current: 1mA Capacitance: 0.4nF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| P6KE120CATA | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 114÷126V; 3.7A; bidirectional; DO15; tape; 0.6kW; P6KE Type of diode: TVS Breakdown voltage: 114...126V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Kind of package: tape Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Max. forward impulse current: 3.7A Max. off-state voltage: 102V Leakage current: 5µA |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE27ATA | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40.5A; unidirectional; DO201AD; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 40.5A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Manufacturer series: 1.5KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMBJ28ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.3A; unidirectional; SMB; reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: SMBJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE56ATA | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.7A; unidirectional; DO201AD; reel Type of diode: TVS Max. off-state voltage: 47.8V Breakdown voltage: 53.2...58.8V Max. forward impulse current: 19.7A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS34AFTR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SMA flat Type of diode: Schottky rectifying Max. forward impulse current: 70A Max. forward voltage: 0.55V Max. off-state voltage: 40V Load current: 3A |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE68ATA | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 64.6÷71.4V; 16.5A; unidirectional; DO201AD; reel Type of diode: TVS Breakdown voltage: 64.6...71.4V Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Kind of package: reel Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Max. forward impulse current: 16.5A Max. off-state voltage: 58.1V Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KMB245STR | SMC DIODE SOLUTIONS |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 45V; If: 2A; Ifsm: 50A; MBS Type of bridge rectifier: single-phase Max. off-state voltage: 45V Load current: 2A Max. forward impulse current: 50A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 0.55V Features of semiconductor devices: Schottky |
на замовлення 2036 шт: термін постачання 14-30 дні (днів) |
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| GBJ3510TB | SMC DIODE SOLUTIONS |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 320A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.32kA Electrical mounting: THT Version: flat Max. forward voltage: 1.1V Leads: flat pin Case: GBJ Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE24CATA | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 22.8÷25.2V; 45.8A; bidirectional; DO201AD; reel; 1.5kW Type of diode: TVS Max. off-state voltage: 20.5V Breakdown voltage: 22.8...25.2V Max. forward impulse current: 45.8A Semiconductor structure: bidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FR106GTA | SMC DIODE SOLUTIONS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; Ammo Pack; DO41; Ufmax: 1.3V; 500ns Capacitance: 15pF Reverse recovery time: 0.5µs Leakage current: 5µA Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.8kV Kind of package: Ammo Pack Case: DO41 Features of semiconductor devices: fast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||||||||||||||||
| SMBJ36ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷44.2V; 10.4A; unidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: SMBJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE30CATA | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 28.5÷31.5V; 36.7A; bidirectional; DO201AD; reel; 1.5kW Type of diode: TVS Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 36.7A Semiconductor structure: bidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE30CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 28.5÷31.5V; 36.7A; bidirectional; DO201AD; reel; 1.5kW Type of diode: TVS Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 36.7A Semiconductor structure: bidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR4090CT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 90V; 40A; TO220AB; Ufmax: 0.88V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 90V Load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.88V Kind of package: tube Capacitance: 800pF Leakage current: 1mA Max. forward impulse current: 250A |
на замовлення 951 шт: термін постачання 14-30 дні (днів) |
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MBR4030CT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 30V; 40A; TO220AB; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.55V Kind of package: tube Capacitance: 1.14nF Leakage current: 1mA Max. forward impulse current: 0.3kA |
на замовлення 671 шт: термін постачання 14-30 дні (днів) |
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MBR4080CT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 80V; 40A; TO220AB; Ufmax: 0.88V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.88V Kind of package: tube Capacitance: 800pF Leakage current: 1mA Max. forward impulse current: 250A |
на замовлення 979 шт: термін постачання 14-30 дні (днів) |
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| MBR40150WT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 40A; TO247AD; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 40A Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 0.95V Kind of package: tube Capacitance: 760pF Leakage current: 1mA Max. forward impulse current: 250A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBR40150CT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 40A; TO220AB; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.95V Kind of package: tube Capacitance: 900pF Leakage current: 1mA Max. forward impulse current: 250A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMAJ33ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel Manufacturer series: SMAJ Leakage current: 5µA |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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SB140TA | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 40A Leakage current: 0.5mA Capacitance: 0.11nF Kind of package: tape |
на замовлення 3872 шт: термін постачання 14-30 дні (днів) |
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| 1.5KE200ATA | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AD; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Manufacturer series: 1.5KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FR304GTA | SMC DIODE SOLUTIONS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; Ammo Pack; DO201AD; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: Ammo Pack Case: DO201AD Max. forward voltage: 1.3V Reverse recovery time: 150ns Leakage current: 5µA Capacitance: 60pF |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
| SMCJ33ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.2A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMBJ10ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: SMBJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE15ATA | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 14.3÷15.8V; 71.7A; unidirectional; DO201AD; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3...15.8V Max. forward impulse current: 71.7A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Manufacturer series: 1.5KE Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE33ATA | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 31.4÷34.7V; 33.3A; unidirectional; DO201AD; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Max. forward impulse current: 33.3A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Manufacturer series: 1.5KE Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
S3M0040120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 223A Power dissipation: 130W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 60 шт: термін постачання 14-30 дні (днів) |
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SMAJ12ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMAJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
|
P4SMF36A | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...36.8V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel Manufacturer series: P4SMF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BAS21TR | SMC DIODE SOLUTIONS |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 0.225W Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Leakage current: 0.1µA Power dissipation: 0.225W Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 44958 шт: термін постачання 14-30 дні (днів) |
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| SMCJ36ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 25.9A; unidirectional; SMC; reel; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 25.9A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE18ATA | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 17.1÷18.9V; 60.3A; unidirectional; DO201AD; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 60.3A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Manufacturer series: 1.5KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
1N4002GTA | SMC DIODE SOLUTIONS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; DO41; Ammo Pack; Ufmax: 1V; Ir: 5uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: Ammo Pack Max. forward voltage: 1V Leakage current: 5µA Capacitance: 8pF |
на замовлення 4634 шт: термін постачання 14-30 дні (днів) |
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| 409CMQ135 | SMC DIODE SOLUTIONS |
Category: Diode modulesDescription: Module: diode; double,common cathode; 135V; If: 200Ax2; PRM4-ISO Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw Load current: 200A x2 Max. off-state voltage: 135V Max. load current: 400A Max. forward impulse current: 2.76kA Kind of package: bulk Semiconductor structure: common cathode; double Type of semiconductor module: diode Case: PRM4-ISO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 159CMQ135 | SMC DIODE SOLUTIONS |
Category: Diode modulesDescription: Module: diode; double,common cathode; 135V; If: 75Ax2; TO249; THT Features of semiconductor devices: Schottky Electrical mounting: THT Mechanical mounting: screw Load current: 75A x2 Max. off-state voltage: 135V Max. load current: 150A Max. forward impulse current: 864A Kind of package: bulk Semiconductor structure: common cathode; double Type of semiconductor module: diode Case: TO249 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 169CMQ135 | SMC DIODE SOLUTIONS |
Category: Diode modulesDescription: Module: diode; double,common cathode; 135V; If: 80Ax2; TO249AA Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw Load current: 80A x2 Max. off-state voltage: 135V Max. load current: 160A Max. forward impulse current: 960A Kind of package: bulk Semiconductor structure: common cathode; double Type of semiconductor module: diode Case: TO249AA |
товару немає в наявності |
В кошику од. на суму грн. |
| S3M0040120T |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 223A
Power dissipation: 130W
Case: TOLL
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 223A
Power dissipation: 130W
Case: TOLL
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 357.43 грн |
| S2M0120120K |
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Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: THT
Gate charge: 29.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: THT
Gate charge: 29.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 359.21 грн |
| 10+ | 237.19 грн |
| S2M0120120T |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 156W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 29.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 156W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 29.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.44 грн |
| 10+ | 159.77 грн |
| S2M0080120T |
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 82A
Power dissipation: 231W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 82A
Power dissipation: 231W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 301.56 грн |
| 10+ | 252.84 грн |
| S3M0016120K |
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 287nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 287nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 868.31 грн |
| S2M0160120K |
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 130W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 26.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 130W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 26.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.98 грн |
| 10+ | 171.30 грн |
| S2M0016120K |
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Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 140A
Pulsed drain current: 314A
Power dissipation: 714W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 224nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 140A
Pulsed drain current: 314A
Power dissipation: 714W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 224nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3229.32 грн |
| SMBJ14ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| SMCJ12ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
| 5.0SMCJ12ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 13.3÷14.7V; 252A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 252A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: 5.0SMCJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 13.3÷14.7V; 252A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 252A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: 5.0SMCJ
Kind of package: reel
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| SMBJ12ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
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| SMCJ28ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33.1A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33.1A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
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| SK26ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 1mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Capacitance: 0.25nF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 1mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Capacitance: 0.25nF
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Мінімальне замовлення: 10 шт
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| SK26TR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 0.5mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 0.5mA
Max. forward impulse current: 50A
Kind of package: reel; tape
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Мінімальне замовлення: 5 шт
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| BZT52C5V6STR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Zener diodes
Description: Diode: Zener; 0.6W; 5.6V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.6W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.6W; 5.6V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.6W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 6109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.21 грн |
| 112+ | 3.71 грн |
| 146+ | 2.82 грн |
| 250+ | 2.08 грн |
| 500+ | 1.86 грн |
| 1000+ | 1.56 грн |
| 3000+ | 1.41 грн |
| 1.5KE250ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 237÷263V; 4.4A; unidirectional; DO201AD; reel
Semiconductor structure: unidirectional
Max. off-state voltage: 214V
Case: DO201AD
Max. forward impulse current: 4.4A
Manufacturer series: 1.5KE
Breakdown voltage: 237...263V
Peak pulse power dissipation: 1.5kW
Kind of package: reel
Mounting: THT
Type of diode: TVS
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 237÷263V; 4.4A; unidirectional; DO201AD; reel
Semiconductor structure: unidirectional
Max. off-state voltage: 214V
Case: DO201AD
Max. forward impulse current: 4.4A
Manufacturer series: 1.5KE
Breakdown voltage: 237...263V
Peak pulse power dissipation: 1.5kW
Kind of package: reel
Mounting: THT
Type of diode: TVS
Leakage current: 5µA
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| 1.5KE250CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 237÷263V; 4.4A; bidirectional; DO201AD; reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 214V
Breakdown voltage: 237...263V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 237÷263V; 4.4A; bidirectional; DO201AD; reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 214V
Breakdown voltage: 237...263V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
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| SMAJ28ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
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Мінімальне замовлення: 5 шт
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| P4SMF100A |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 1.2A; unidirectional; SOD123F; reel
Type of diode: TVS
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Semiconductor structure: unidirectional
Max. forward impulse current: 1.2A
Kind of package: reel
Leakage current: 1µA
Breakdown voltage: 111...123V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 1.2A; unidirectional; SOD123F; reel
Type of diode: TVS
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Semiconductor structure: unidirectional
Max. forward impulse current: 1.2A
Kind of package: reel
Leakage current: 1µA
Breakdown voltage: 111...123V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMF
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| MBR4045WT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 40A; TO247AD; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.8V
Max. forward impulse current: 318A
Leakage current: 1mA
Capacitance: 1.1nF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 40A; TO247AD; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.8V
Max. forward impulse current: 318A
Leakage current: 1mA
Capacitance: 1.1nF
Kind of package: tube
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 193.35 грн |
| 10+ | 137.54 грн |
| 25+ | 111.18 грн |
| MBR4045CT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 40A; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.78V
Max. forward impulse current: 252A
Leakage current: 1mA
Capacitance: 1.1nF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 40A; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.78V
Max. forward impulse current: 252A
Leakage current: 1mA
Capacitance: 1.1nF
Kind of package: tube
на замовлення 307 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.44 грн |
| 50+ | 70.00 грн |
| 100+ | 63.42 грн |
| 250+ | 56.83 грн |
| MBR2060CT-1 |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20A; TO262; Ufmax: 0.95V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO262
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 1mA
Capacitance: 0.4nF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20A; TO262; Ufmax: 0.95V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO262
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 1mA
Capacitance: 0.4nF
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| MBR2060CTL |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20A; TO220AB; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.69V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 1mA
Capacitance: 0.4nF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20A; TO220AB; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.69V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 1mA
Capacitance: 0.4nF
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| MBR2060CTP |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20A; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 1mA
Capacitance: 0.4nF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20A; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 1mA
Capacitance: 0.4nF
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| P6KE120CATA |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 114÷126V; 3.7A; bidirectional; DO15; tape; 0.6kW; P6KE
Type of diode: TVS
Breakdown voltage: 114...126V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Kind of package: tape
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 3.7A
Max. off-state voltage: 102V
Leakage current: 5µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 114÷126V; 3.7A; bidirectional; DO15; tape; 0.6kW; P6KE
Type of diode: TVS
Breakdown voltage: 114...126V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Kind of package: tape
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 3.7A
Max. off-state voltage: 102V
Leakage current: 5µA
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Мінімальне замовлення: 5 шт
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| 1.5KE27ATA |
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40.5A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40.5A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
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| SMBJ28ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.3A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.3A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
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Мінімальне замовлення: 5 шт
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| 1.5KE56ATA |
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.7A; unidirectional; DO201AD; reel
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Max. forward impulse current: 19.7A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 53.2÷58.8V; 19.7A; unidirectional; DO201AD; reel
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Max. forward impulse current: 19.7A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
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| SS34AFTR |
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA flat
Type of diode: Schottky rectifying
Max. forward impulse current: 70A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA flat
Type of diode: Schottky rectifying
Max. forward impulse current: 70A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 3A
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Мінімальне замовлення: 6000 шт
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| 1.5KE68ATA |
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 64.6÷71.4V; 16.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Breakdown voltage: 64.6...71.4V
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Max. forward impulse current: 16.5A
Max. off-state voltage: 58.1V
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 64.6÷71.4V; 16.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Breakdown voltage: 64.6...71.4V
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Max. forward impulse current: 16.5A
Max. off-state voltage: 58.1V
Leakage current: 5µA
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| KMB245STR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 45V; If: 2A; Ifsm: 50A; MBS
Type of bridge rectifier: single-phase
Max. off-state voltage: 45V
Load current: 2A
Max. forward impulse current: 50A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.55V
Features of semiconductor devices: Schottky
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 45V; If: 2A; Ifsm: 50A; MBS
Type of bridge rectifier: single-phase
Max. off-state voltage: 45V
Load current: 2A
Max. forward impulse current: 50A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.55V
Features of semiconductor devices: Schottky
на замовлення 2036 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 24.83 грн |
| 23+ | 18.04 грн |
| 100+ | 13.67 грн |
| 250+ | 12.68 грн |
| 500+ | 12.02 грн |
| 1000+ | 10.87 грн |
| GBJ3510TB |
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Виробник: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.32kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.32kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
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| 1.5KE24CATA |
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 45.8A; bidirectional; DO201AD; reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Max. forward impulse current: 45.8A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 45.8A; bidirectional; DO201AD; reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Max. forward impulse current: 45.8A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
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| FR106GTA |
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Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; Ammo Pack; DO41; Ufmax: 1.3V; 500ns
Capacitance: 15pF
Reverse recovery time: 0.5µs
Leakage current: 5µA
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.8kV
Kind of package: Ammo Pack
Case: DO41
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; Ammo Pack; DO41; Ufmax: 1.3V; 500ns
Capacitance: 15pF
Reverse recovery time: 0.5µs
Leakage current: 5µA
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.8kV
Kind of package: Ammo Pack
Case: DO41
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
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Мінімальне замовлення: 25 шт
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| SMBJ36ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.4A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.4A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
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Мінімальне замовлення: 5 шт
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| 1.5KE30CATA |
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 36.7A; bidirectional; DO201AD; reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36.7A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 36.7A; bidirectional; DO201AD; reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36.7A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
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| 1.5KE30CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 36.7A; bidirectional; DO201AD; reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36.7A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5÷31.5V; 36.7A; bidirectional; DO201AD; reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 36.7A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
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| MBR4090CT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 90V; 40A; TO220AB; Ufmax: 0.88V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 90V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.88V
Kind of package: tube
Capacitance: 800pF
Leakage current: 1mA
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 90V; 40A; TO220AB; Ufmax: 0.88V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 90V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.88V
Kind of package: tube
Capacitance: 800pF
Leakage current: 1mA
Max. forward impulse current: 250A
на замовлення 951 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.88 грн |
| 10+ | 71.65 грн |
| 50+ | 64.24 грн |
| 100+ | 60.12 грн |
| 250+ | 56.83 грн |
| 500+ | 51.06 грн |
| MBR4030CT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 40A; TO220AB; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.55V
Kind of package: tube
Capacitance: 1.14nF
Leakage current: 1mA
Max. forward impulse current: 0.3kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 40A; TO220AB; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.55V
Kind of package: tube
Capacitance: 1.14nF
Leakage current: 1mA
Max. forward impulse current: 0.3kA
на замовлення 671 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 140.14 грн |
| 50+ | 64.16 грн |
| 100+ | 57.49 грн |
| 250+ | 50.65 грн |
| 500+ | 45.96 грн |
| MBR4080CT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 40A; TO220AB; Ufmax: 0.88V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.88V
Kind of package: tube
Capacitance: 800pF
Leakage current: 1mA
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 40A; TO220AB; Ufmax: 0.88V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.88V
Kind of package: tube
Capacitance: 800pF
Leakage current: 1mA
Max. forward impulse current: 250A
на замовлення 979 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 162.31 грн |
| 50+ | 74.12 грн |
| 100+ | 67.53 грн |
| 250+ | 60.12 грн |
| 500+ | 53.53 грн |
| MBR40150WT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 40A; TO247AD; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.95V
Kind of package: tube
Capacitance: 760pF
Leakage current: 1mA
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 40A; TO247AD; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.95V
Kind of package: tube
Capacitance: 760pF
Leakage current: 1mA
Max. forward impulse current: 250A
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| MBR40150CT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 40A; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Capacitance: 900pF
Leakage current: 1mA
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 40A; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Capacitance: 900pF
Leakage current: 1mA
Max. forward impulse current: 250A
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| SMAJ33ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
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Мінімальне замовлення: 5 шт
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| SB140TA |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Leakage current: 0.5mA
Capacitance: 0.11nF
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Leakage current: 0.5mA
Capacitance: 0.11nF
Kind of package: tape
на замовлення 3872 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.55 грн |
| 148+ | 2.80 грн |
| 175+ | 2.36 грн |
| 250+ | 2.13 грн |
| 500+ | 1.98 грн |
| 1000+ | 1.89 грн |
| 1.5KE200ATA |
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
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| FR304GTA |
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Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ammo Pack; DO201AD; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 150ns
Leakage current: 5µA
Capacitance: 60pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ammo Pack; DO201AD; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Case: DO201AD
Max. forward voltage: 1.3V
Reverse recovery time: 150ns
Leakage current: 5µA
Capacitance: 60pF
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Мінімальне замовлення: 5 шт
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| SMCJ33ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.2A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.2A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
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| SMBJ10ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
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Мінімальне замовлення: 5 шт
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| 1.5KE15ATA |
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 14.3÷15.8V; 71.7A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 71.7A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Kind of package: reel
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 14.3÷15.8V; 71.7A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 71.7A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Kind of package: reel
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| 1.5KE33ATA |
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; 33.3A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 33.3A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Kind of package: reel
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 31.4÷34.7V; 33.3A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 33.3A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Kind of package: reel
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| S3M0040120K |
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Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 223A
Power dissipation: 130W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 223A
Power dissipation: 130W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 463.87 грн |
| 3+ | 386.26 грн |
| 10+ | 342.61 грн |
| 30+ | 307.20 грн |
| SMAJ12ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
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Мінімальне замовлення: 5 шт
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| P4SMF36A |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...36.8V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel
Manufacturer series: P4SMF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...36.8V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel
Manufacturer series: P4SMF
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| BAS21TR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 0.225W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Leakage current: 0.1µA
Power dissipation: 0.225W
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 0.225W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Leakage current: 0.1µA
Power dissipation: 0.225W
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 44958 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 16.85 грн |
| 41+ | 10.05 грн |
| 100+ | 5.86 грн |
| 250+ | 4.35 грн |
| 500+ | 3.48 грн |
| 1000+ | 2.60 грн |
| 3000+ | 2.35 грн |
| 6000+ | 2.07 грн |
| 9000+ | 1.86 грн |
| SMCJ36ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.9A; unidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.9A; unidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
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| 1.5KE18ATA |
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 17.1÷18.9V; 60.3A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 60.3A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 17.1÷18.9V; 60.3A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 60.3A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
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| 1N4002GTA |
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Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; DO41; Ammo Pack; Ufmax: 1V; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: Ammo Pack
Max. forward voltage: 1V
Leakage current: 5µA
Capacitance: 8pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; DO41; Ammo Pack; Ufmax: 1V; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: Ammo Pack
Max. forward voltage: 1V
Leakage current: 5µA
Capacitance: 8pF
на замовлення 4634 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.30 грн |
| 42+ | 9.88 грн |
| 59+ | 6.98 грн |
| 100+ | 5.10 грн |
| 500+ | 3.57 грн |
| 409CMQ135 |
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Виробник: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Module: diode; double,common cathode; 135V; If: 200Ax2; PRM4-ISO
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Load current: 200A x2
Max. off-state voltage: 135V
Max. load current: 400A
Max. forward impulse current: 2.76kA
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: PRM4-ISO
Category: Diode modules
Description: Module: diode; double,common cathode; 135V; If: 200Ax2; PRM4-ISO
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Load current: 200A x2
Max. off-state voltage: 135V
Max. load current: 400A
Max. forward impulse current: 2.76kA
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: PRM4-ISO
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| 159CMQ135 |
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Виробник: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Module: diode; double,common cathode; 135V; If: 75Ax2; TO249; THT
Features of semiconductor devices: Schottky
Electrical mounting: THT
Mechanical mounting: screw
Load current: 75A x2
Max. off-state voltage: 135V
Max. load current: 150A
Max. forward impulse current: 864A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: TO249
Category: Diode modules
Description: Module: diode; double,common cathode; 135V; If: 75Ax2; TO249; THT
Features of semiconductor devices: Schottky
Electrical mounting: THT
Mechanical mounting: screw
Load current: 75A x2
Max. off-state voltage: 135V
Max. load current: 150A
Max. forward impulse current: 864A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: TO249
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| 169CMQ135 |
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Виробник: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Module: diode; double,common cathode; 135V; If: 80Ax2; TO249AA
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Load current: 80A x2
Max. off-state voltage: 135V
Max. load current: 160A
Max. forward impulse current: 960A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: TO249AA
Category: Diode modules
Description: Module: diode; double,common cathode; 135V; If: 80Ax2; TO249AA
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Load current: 80A x2
Max. off-state voltage: 135V
Max. load current: 160A
Max. forward impulse current: 960A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: TO249AA
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