Продукція > SMC DIODE SOLUTIONS > Всі товари виробника SMC DIODE SOLUTIONS (7606) > Сторінка 107 з 127
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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MBR1060CTP | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 5Ax2; TO220AB; Ufmax: 0.7V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.7V Max. forward impulse current: 125A Kind of package: tube Max. load current: 10A Leakage current: 1mA Capacitance: 220pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 1N5406GTA | SMC DIODE SOLUTIONS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; DO201AD; Ammo Pack; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Case: DO201AD Kind of package: Ammo Pack Max. forward voltage: 1.1V Leakage current: 5µA Capacitance: 30pF |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | |||||||||||||||
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SMAJ58ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMAJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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SSKT160-08 | SMC DIODE SOLUTIONS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 800V; 160A; T2-1; Ifsm: 5kA; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: thyristor Gate current: 150mA Threshold on-voltage: 0.85V Load current: 160A Max. forward impulse current: 5kA Max. off-state voltage: 0.8kV Case: T2-1 Semiconductor structure: double series |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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SMBJ26ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.3A; unidirectional; SMB; reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: SMBJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ58ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.5A; unidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: SMBJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ15CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7÷18.5V; 24.6A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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S3D20065D | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3,TO247AD Case: TO247-3; TO247AD Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 2.4V Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 102A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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S3D20065D1 | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3,TO247AD Case: TO247-3; TO247AD Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 2.4V Load current: 20A Max. forward impulse current: 102A Max. off-state voltage: 650V Semiconductor structure: single diode |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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SMBJ33CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: SMBJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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1N4448WTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 4pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Leakage current: 5µA Power dissipation: 0.5W |
на замовлення 36665 шт: термін постачання 14-30 дні (днів) |
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SMAJ58CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Manufacturer series: SMAJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
| 1.5KE82CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 77.9÷86.1V; 13.5A; bidirectional; DO201AD; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 77.9...86.1V Max. forward impulse current: 13.5A Semiconductor structure: bidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SM8S20ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 22.2÷24.5V; 204A; unidirectional; DO218AB; reel Manufacturer series: SM8S Peak pulse power dissipation: 6.6kW Max. off-state voltage: 20V Kind of package: reel Semiconductor structure: unidirectional Leakage current: 5µA Case: DO218AB Type of diode: TVS Mounting: SMD Breakdown voltage: 22.2...24.5V Max. forward impulse current: 204A |
на замовлення 718 шт: термін постачання 14-30 дні (днів) |
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| SM8S20CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 22.2÷24.5V; 204A; bidirectional; DO218AB; reel Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 204A Semiconductor structure: bidirectional Case: DO218AB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SM8S22ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 24.4÷26.9V; 186A; unidirectional; DO218AB; reel Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 186A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SM8S22CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 24.4÷26.9V; 186A; bidirectional; DO218AB; reel Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 186A Semiconductor structure: bidirectional Case: DO218AB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SM8S24ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 26.7÷29.5V; 170A; unidirectional; DO218AB; reel Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 170A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SM8S24CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 26.7÷29.5V; 170A; bidirectional; DO218AB; reel Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 170A Semiconductor structure: bidirectional Case: DO218AB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SM8S26ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 28.9÷31.9V; 157A; unidirectional; DO218AB; reel Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 157A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SM8S26CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 28.9÷31.9V; 157A; bidirectional; DO218AB; reel Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 157A Semiconductor structure: bidirectional Case: DO218AB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SM8S28ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 31.1÷34.4V; 145A; unidirectional; DO218AB; reel Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 0.145kA Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SM8S28CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 31.1÷34.4V; 145A; bidirectional; DO218AB; reel Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 0.145kA Semiconductor structure: bidirectional Case: DO218AB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SM8S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBR2080CT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 80V; 10Ax2; TO220AB; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.9V Kind of package: tube Max. forward impulse current: 150A Max. load current: 20A Leakage current: 1mA Capacitance: 0.3nF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR2080CTL | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 80V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Kind of package: tube Max. forward impulse current: 150A Max. load current: 20A Leakage current: 1mA Capacitance: 500pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR2080CTP | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 80V; 10Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.85V Kind of package: tube Max. forward impulse current: 150A Max. load current: 20A Leakage current: 1mA Capacitance: 500pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRF10100CT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.85V Max. load current: 10A Max. forward impulse current: 120A Leakage current: 1mA Capacitance: 0.3nF Kind of package: tube |
на замовлення 802 шт: термін постачання 14-30 дні (днів) |
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MBRF10100CTR | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common anode; double Case: ITO220AB Max. forward voltage: 0.85V Max. load current: 10A Max. forward impulse current: 120A Leakage current: 1mA Capacitance: 0.3nF Kind of package: tube |
на замовлення 936 шт: термін постачання 14-30 дні (днів) |
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| MBRF10100CTP | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.85V Max. load current: 10A Max. forward impulse current: 120A Leakage current: 1mA Capacitance: 0.3nF Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KBP208GTB | SMC DIODE SOLUTIONS |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 60A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 60A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||
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SMBJ5.0CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7V; 65.3A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 65.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ24CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.5A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: SMBJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
| SMBJ85CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||
| DF06TB | SMC DIODE SOLUTIONS |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DB-M Type of bridge rectifier: single-phase Max. forward impulse current: 50A Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Max. off-state voltage: 0.8kV Electrical mounting: SMT Load current: 1A Kind of package: tube Case: DB-M |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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ES2GTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.25V; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 1.25V Kind of package: reel; tape Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ22ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.3A; unidirectional; SMA; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMAJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ20CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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SB3150TA | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.89V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.89V Max. forward impulse current: 110A Leakage current: 1mA Capacitance: 0.2nF Kind of package: tape |
на замовлення 359 шт: термін постачання 14-30 дні (днів) |
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SMAJ6.5CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 0.5mA Manufacturer series: SMAJ Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
| 1.5KE68ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 64.6÷71.4V; 16.5A; unidirectional; DO201AD; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58.1V Breakdown voltage: 64.6...71.4V Max. forward impulse current: 16.5A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Manufacturer series: 1.5KE Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SK220ATR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 200V; 2A; reel,tape Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 0.9V Max. off-state voltage: 200V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.5mA Case: SMA Capacitance: 170pF Type of diode: Schottky rectifying |
на замовлення 9625 шт: термін постачання 14-30 дні (днів) |
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| SB540TA | SMC DIODE SOLUTIONS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.65V Max. forward impulse current: 150A Leakage current: 1mA Capacitance: 0.28nF Kind of package: tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SB5200TA | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 5A; DO201AD; Ufmax: 1.1V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 1.1V Max. forward impulse current: 120A Leakage current: 1mA Capacitance: 0.2nF Kind of package: tape |
на замовлення 1423 шт: термін постачання 14-30 дні (днів) |
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| 1.5KE27ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 25.7÷28.4V; 40.5A; unidirectional; DO201AD; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 23.1V Breakdown voltage: 25.7...28.4V Max. forward impulse current: 40.5A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Manufacturer series: 1.5KE Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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S3M0040120B | SMC DIODE SOLUTIONS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W Mounting: SMD Power dissipation: 333W Gate charge: 143nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 40A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -4...18V Kind of package: tube Case: T2PAK On-state resistance: 50mΩ Pulsed drain current: 200A |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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S3M0040120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 223A Power dissipation: 130W Case: TOLL Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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S2M0120120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 15A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V Kind of package: tube Case: TO247-4 On-state resistance: 212mΩ Mounting: THT Pulsed drain current: 66A Power dissipation: 156W Gate charge: 29.6nC Polarisation: unipolar |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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| S2M0120120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL Mounting: SMD Power dissipation: 156W Gate charge: 29.6nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 15A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V Kind of package: reel; tape Case: TOLL On-state resistance: 212mΩ Pulsed drain current: 66A |
на замовлення 28 шт: термін постачання 14-30 дні (днів) |
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| S2M0080120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 29A Pulsed drain current: 82A Power dissipation: 231W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 137mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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S3M0016120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 732W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 25mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 287nC Technology: SiC Features of semiconductor devices: Kelvin terminal |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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S2M0160120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 12A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V Kind of package: tube Case: TO247-4 On-state resistance: 0.3Ω Mounting: THT Pulsed drain current: 40A Power dissipation: 130W Gate charge: 26.5nC Polarisation: unipolar |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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S2M0016120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 140A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V Kind of package: tube Case: TO247-4 On-state resistance: 16mΩ Mounting: THT Pulsed drain current: 314A Power dissipation: 714W Gate charge: 224nC Polarisation: unipolar |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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SMBJ14ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMB; reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 25.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
| SMCJ12ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 5.0SMCJ12ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 13.3÷14.7V; 252A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 252A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 0.8mA Manufacturer series: 5.0SMCJ Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMBJ12ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
| SMCJ28ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷34.4V; 33.1A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 33.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SK26ATR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Leakage current: 1mA Max. forward impulse current: 50A Kind of package: reel; tape Capacitance: 0.25nF |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
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SK26TR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Leakage current: 0.5mA Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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BZT52C5V6STR | SMC DIODE SOLUTIONS |
Category: SMD Zener diodesDescription: Diode: Zener; 0.6W; 5.6V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.6W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 6109 шт: термін постачання 14-30 дні (днів) |
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| MBR1060CTP |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. forward impulse current: 125A
Kind of package: tube
Max. load current: 10A
Leakage current: 1mA
Capacitance: 220pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. forward impulse current: 125A
Kind of package: tube
Max. load current: 10A
Leakage current: 1mA
Capacitance: 220pF
товару немає в наявності
В кошику
од. на суму грн.
| 1N5406GTA |
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Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; Ammo Pack; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Leakage current: 5µA
Capacitance: 30pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; Ammo Pack; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Leakage current: 5µA
Capacitance: 30pF
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику
од. на суму грн.
| SMAJ58ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| SSKT160-08 |
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Виробник: SMC DIODE SOLUTIONS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 160A; T2-1; Ifsm: 5kA; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Threshold on-voltage: 0.85V
Load current: 160A
Max. forward impulse current: 5kA
Max. off-state voltage: 0.8kV
Case: T2-1
Semiconductor structure: double series
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 160A; T2-1; Ifsm: 5kA; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Threshold on-voltage: 0.85V
Load current: 160A
Max. forward impulse current: 5kA
Max. off-state voltage: 0.8kV
Case: T2-1
Semiconductor structure: double series
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6363.16 грн |
| 3+ | 5241.60 грн |
| SMBJ26ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.3A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.3A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| SMBJ58ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.5A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.5A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| SMBJ15CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24.6A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24.6A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| S3D20065D |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3,TO247AD
Case: TO247-3; TO247AD
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 2.4V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 102A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3,TO247AD
Case: TO247-3; TO247AD
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 2.4V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 102A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 362.83 грн |
| 10+ | 303.05 грн |
| 25+ | 286.97 грн |
| S3D20065D1 |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3,TO247AD
Case: TO247-3; TO247AD
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 2.4V
Load current: 20A
Max. forward impulse current: 102A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3,TO247AD
Case: TO247-3; TO247AD
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 2.4V
Load current: 20A
Max. forward impulse current: 102A
Max. off-state voltage: 650V
Semiconductor structure: single diode
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 369.21 грн |
| 10+ | 308.13 грн |
| 25+ | 291.20 грн |
| SMBJ33CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| 1N4448WTR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 5µA
Power dissipation: 0.5W
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 5µA
Power dissipation: 0.5W
на замовлення 36665 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.65 грн |
| 173+ | 2.45 грн |
| 243+ | 1.74 грн |
| 323+ | 1.31 грн |
| 500+ | 1.21 грн |
| 1000+ | 1.16 грн |
| 3000+ | 1.15 грн |
| SMAJ58CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMAJ
Kind of package: reel
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMAJ
Kind of package: reel
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Мінімальне замовлення: 5 шт
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| 1.5KE82CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 77.9÷86.1V; 13.5A; bidirectional; DO201AD; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 77.9...86.1V
Max. forward impulse current: 13.5A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 77.9÷86.1V; 13.5A; bidirectional; DO201AD; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 77.9...86.1V
Max. forward impulse current: 13.5A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: reel
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| SM8S20ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 22.2÷24.5V; 204A; unidirectional; DO218AB; reel
Manufacturer series: SM8S
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 20V
Kind of package: reel
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO218AB
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 204A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 22.2÷24.5V; 204A; unidirectional; DO218AB; reel
Manufacturer series: SM8S
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 20V
Kind of package: reel
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO218AB
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 204A
на замовлення 718 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.71 грн |
| 5+ | 132.06 грн |
| 25+ | 116.82 грн |
| 100+ | 110.05 грн |
| SM8S20CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 22.2÷24.5V; 204A; bidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 204A
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 22.2÷24.5V; 204A; bidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 204A
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
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| SM8S22ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 24.4÷26.9V; 186A; unidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 186A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 24.4÷26.9V; 186A; unidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 186A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
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| SM8S22CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 24.4÷26.9V; 186A; bidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 186A
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 24.4÷26.9V; 186A; bidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 186A
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
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| SM8S24ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 26.7÷29.5V; 170A; unidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 170A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 26.7÷29.5V; 170A; unidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 170A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
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| SM8S24CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 26.7÷29.5V; 170A; bidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 170A
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 26.7÷29.5V; 170A; bidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 170A
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
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| SM8S26ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 28.9÷31.9V; 157A; unidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 157A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 28.9÷31.9V; 157A; unidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 157A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
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| SM8S26CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 28.9÷31.9V; 157A; bidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 157A
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 28.9÷31.9V; 157A; bidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 157A
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
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| SM8S28ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 31.1÷34.4V; 145A; unidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 0.145kA
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 31.1÷34.4V; 145A; unidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 0.145kA
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
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| SM8S28CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 31.1÷34.4V; 145A; bidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 0.145kA
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 31.1÷34.4V; 145A; bidirectional; DO218AB; reel
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 0.145kA
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SM8S
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| MBR2080CT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10Ax2; TO220AB; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.9V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
Leakage current: 1mA
Capacitance: 0.3nF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10Ax2; TO220AB; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.9V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
Leakage current: 1mA
Capacitance: 0.3nF
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| MBR2080CTL |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
Leakage current: 1mA
Capacitance: 500pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
Leakage current: 1mA
Capacitance: 500pF
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| MBR2080CTP |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
Leakage current: 1mA
Capacitance: 500pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
Leakage current: 1mA
Capacitance: 500pF
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| MBRF10100CT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.85V
Max. load current: 10A
Max. forward impulse current: 120A
Leakage current: 1mA
Capacitance: 0.3nF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.85V
Max. load current: 10A
Max. forward impulse current: 120A
Leakage current: 1mA
Capacitance: 0.3nF
Kind of package: tube
на замовлення 802 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 75.67 грн |
| 50+ | 33.35 грн |
| 100+ | 29.88 грн |
| 250+ | 25.65 грн |
| 500+ | 23.19 грн |
| MBRF10100CTR |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common anode; double
Case: ITO220AB
Max. forward voltage: 0.85V
Max. load current: 10A
Max. forward impulse current: 120A
Leakage current: 1mA
Capacitance: 0.3nF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common anode; double
Case: ITO220AB
Max. forward voltage: 0.85V
Max. load current: 10A
Max. forward impulse current: 120A
Leakage current: 1mA
Capacitance: 0.3nF
Kind of package: tube
на замовлення 936 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.20 грн |
| 14+ | 32.42 грн |
| 50+ | 27.26 грн |
| 100+ | 24.55 грн |
| 250+ | 22.69 грн |
| 500+ | 21.67 грн |
| MBRF10100CTP |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.85V
Max. load current: 10A
Max. forward impulse current: 120A
Leakage current: 1mA
Capacitance: 0.3nF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.85V
Max. load current: 10A
Max. forward impulse current: 120A
Leakage current: 1mA
Capacitance: 0.3nF
Kind of package: tube
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| KBP208GTB |
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Виробник: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 60A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 60A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 60A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 60A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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Мінімальне замовлення: 3 шт
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| SMBJ5.0CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 65.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 65.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: reel
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 65.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 65.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: reel
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Мінімальне замовлення: 5 шт
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| SMBJ24CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.5A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.5A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
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Мінімальне замовлення: 5 шт
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| SMBJ85CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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Мінімальне замовлення: 5 шт
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| DF06TB |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DB-M
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 1A
Kind of package: tube
Case: DB-M
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DB-M
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 1A
Kind of package: tube
Case: DB-M
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Мінімальне замовлення: 2500 шт
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| ES2GTR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.25V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.25V
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.25V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.25V
Kind of package: reel; tape
Leakage current: 5µA
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| SMAJ22ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.3A; unidirectional; SMA; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.3A; unidirectional; SMA; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
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Мінімальне замовлення: 5 шт
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| SMBJ20CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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Мінімальне замовлення: 5 шт
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| SB3150TA |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.89V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.89V
Max. forward impulse current: 110A
Leakage current: 1mA
Capacitance: 0.2nF
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.89V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.89V
Max. forward impulse current: 110A
Leakage current: 1mA
Capacitance: 0.2nF
Kind of package: tape
на замовлення 359 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.85 грн |
| 46+ | 9.31 грн |
| 100+ | 8.72 грн |
| 250+ | 8.38 грн |
| SMAJ6.5CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: SMAJ
Kind of package: reel
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: SMAJ
Kind of package: reel
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Мінімальне замовлення: 5 шт
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| 1.5KE68ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 64.6÷71.4V; 16.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6...71.4V
Max. forward impulse current: 16.5A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Kind of package: reel
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 64.6÷71.4V; 16.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6...71.4V
Max. forward impulse current: 16.5A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Kind of package: reel
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| SK220ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.9V
Max. off-state voltage: 200V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Case: SMA
Capacitance: 170pF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.9V
Max. off-state voltage: 200V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Case: SMA
Capacitance: 170pF
Type of diode: Schottky rectifying
на замовлення 9625 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 85+ | 5.38 грн |
| 100+ | 4.67 грн |
| 1000+ | 4.12 грн |
| 5000+ | 3.88 грн |
| SB540TA |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Leakage current: 1mA
Capacitance: 0.28nF
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Leakage current: 1mA
Capacitance: 0.28nF
Kind of package: tape
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| SB5200TA |
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5A; DO201AD; Ufmax: 1.1V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.1V
Max. forward impulse current: 120A
Leakage current: 1mA
Capacitance: 0.2nF
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5A; DO201AD; Ufmax: 1.1V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.1V
Max. forward impulse current: 120A
Leakage current: 1mA
Capacitance: 0.2nF
Kind of package: tape
на замовлення 1423 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.76 грн |
| 45+ | 9.57 грн |
| 100+ | 9.06 грн |
| 250+ | 8.63 грн |
| 500+ | 7.79 грн |
| 1250+ | 7.62 грн |
| 1.5KE27ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40.5A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Kind of package: reel
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40.5A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Kind of package: reel
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| S3M0040120B |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W
Mounting: SMD
Power dissipation: 333W
Gate charge: 143nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: T2PAK
On-state resistance: 50mΩ
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 200A; 333W
Mounting: SMD
Power dissipation: 333W
Gate charge: 143nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: T2PAK
On-state resistance: 50mΩ
Pulsed drain current: 200A
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 381.97 грн |
| 3+ | 319.13 грн |
| 10+ | 281.89 грн |
| S3M0040120T |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 223A
Power dissipation: 130W
Case: TOLL
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 223A
Power dissipation: 130W
Case: TOLL
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 361.00 грн |
| S2M0120120K |
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Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
On-state resistance: 212mΩ
Mounting: THT
Pulsed drain current: 66A
Power dissipation: 156W
Gate charge: 29.6nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
On-state resistance: 212mΩ
Mounting: THT
Pulsed drain current: 66A
Power dissipation: 156W
Gate charge: 29.6nC
Polarisation: unipolar
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 362.83 грн |
| 10+ | 239.56 грн |
| S2M0120120T |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL
Mounting: SMD
Power dissipation: 156W
Gate charge: 29.6nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: reel; tape
Case: TOLL
On-state resistance: 212mΩ
Pulsed drain current: 66A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL
Mounting: SMD
Power dissipation: 156W
Gate charge: 29.6nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: reel; tape
Case: TOLL
On-state resistance: 212mΩ
Pulsed drain current: 66A
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 256.17 грн |
| 10+ | 159.99 грн |
| S2M0080120T |
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 82A
Power dissipation: 231W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 82A
Power dissipation: 231W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| S3M0016120K |
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 287nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 287nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 875.16 грн |
| S2M0160120K |
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
On-state resistance: 0.3Ω
Mounting: THT
Pulsed drain current: 40A
Power dissipation: 130W
Gate charge: 26.5nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
On-state resistance: 0.3Ω
Mounting: THT
Pulsed drain current: 40A
Power dissipation: 130W
Gate charge: 26.5nC
Polarisation: unipolar
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.64 грн |
| 10+ | 172.69 грн |
| S2M0016120K |
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Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
On-state resistance: 16mΩ
Mounting: THT
Pulsed drain current: 314A
Power dissipation: 714W
Gate charge: 224nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
On-state resistance: 16mΩ
Mounting: THT
Pulsed drain current: 314A
Power dissipation: 714W
Gate charge: 224nC
Polarisation: unipolar
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3320.15 грн |
| SMBJ14ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| SMCJ12ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
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В кошику
од. на суму грн.
| 5.0SMCJ12ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 13.3÷14.7V; 252A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 252A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: 5.0SMCJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 13.3÷14.7V; 252A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 252A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: 5.0SMCJ
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ12ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| SMCJ28ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33.1A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33.1A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
| SK26ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 1mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Capacitance: 0.25nF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 1mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Capacitance: 0.25nF
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| SK26TR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 0.5mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 0.5mA
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| BZT52C5V6STR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Zener diodes
Description: Diode: Zener; 0.6W; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.6W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.6W; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.6W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 6109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.38 грн |
| 114+ | 3.72 грн |
| 149+ | 2.85 грн |
| 250+ | 2.10 грн |
| 500+ | 1.88 грн |
| 1000+ | 1.57 грн |
| 3000+ | 1.41 грн |

























