Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164568) > Сторінка 354 з 2743
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L4938EDTR-E | STMicroelectronics |
Description: IC REG LINEAR POS ADJ 20SO Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Adjustable (Fixed) Mounting Type: Surface Mount Current - Output: 100mA, 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Voltage - Input (Max): 28V Number of Regulators: 2 Supplier Device Package: 20-SO Voltage - Output (Max): 5.1V Voltage - Output (Min/Fixed): 4.9V (5V) Control Features: Enable, Reset Part Status: Active Voltage Dropout (Max): 0.4V @ 100mA, 0.6V @ 400mA Protection Features: Over Temperature |
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| L5975DTR | STMicroelectronics |
Description: IC REG BUCK ADJ 3A 8SO Packaging: Tape & Reel (TR) Output Type: Adjustable Mounting Type: Surface Mount Function: Step-Down Current - Output: 3A Output Configuration: Positive Voltage - Input (Max): 36V Topology: Buck Supplier Device Package: 8-SO Voltage - Output (Max): 36V Voltage - Input (Min): 4V Part Status: Active |
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STM32L100C-DISCO | STMicroelectronics |
Description: DISCOVERY STM32L100 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M3 Board Type: Evaluation Platform Utilized IC / Part: STM32L100 Platform: Discovery Part Status: Obsolete |
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L3GD20HTR | STMicroelectronics |
Description: IC MEMS MOTION SENSOR 16LLGA Packaging: Tape & Reel (TR) Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor Package / Case: 16-LGA Output Type: I2C, SPI Type: Digital Axis: X (Pitch), Y (Roll), Z (Yaw) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.2V ~ 3.6V Bandwidth: 6.25Hz ~ 400Hz Range °/s: ±245, 500, 2000 Sensitivity (LSB/(°/s)): 8.75 ~ 70 Part Status: Obsolete Current - Supply: 5 mA |
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L3GD20HTR | STMicroelectronics |
Description: IC MEMS MOTION SENSOR 16LLGA Packaging: Cut Tape (CT) Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor Package / Case: 16-LGA Output Type: I2C, SPI Type: Digital Axis: X (Pitch), Y (Roll), Z (Yaw) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.2V ~ 3.6V Bandwidth: 6.25Hz ~ 400Hz Range °/s: ±245, 500, 2000 Sensitivity (LSB/(°/s)): 8.75 ~ 70 Part Status: Obsolete Current - Supply: 5 mA |
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STB18N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 13A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V |
на замовлення 1632 шт: термін постачання 21-31 дні (днів) |
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STB6N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 4.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V |
на замовлення 6839 шт: термін постачання 21-31 дні (днів) |
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STB7ANM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 1748 шт: термін постачання 21-31 дні (днів) |
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STB9NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 5.2A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 926 шт: термін постачання 21-31 дні (днів) |
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STD10N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 7.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V |
на замовлення 3682 шт: термін постачання 21-31 дні (днів) |
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STD26P3LLH6 | STMicroelectronics |
Description: MOSFET P-CH 30V 12A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
на замовлення 37997 шт: термін постачання 21-31 дні (днів) |
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STD6N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 4.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V |
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STD7ANM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 5503 шт: термін постачання 21-31 дні (днів) |
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STD7N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V |
на замовлення 7584 шт: термін постачання 21-31 дні (днів) |
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STD80N6F6 | STMicroelectronics |
Description: MOSFET N-CH 60V 80A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V Qualification: AEC-Q101 |
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STDLED625H | STMicroelectronics |
Description: MOSFET N-CH 620V 4.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STGD20N40LZ | STMicroelectronics |
Description: IGBT 390V 25A 125W DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Supplier Device Package: DPAK Td (on/off) @ 25°C: 700ns/4.3µs Test Condition: 300V, 10A, 1kOhm, 5V Gate Charge: 24 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector Pulsed (Icm): 40 A Power - Max: 125 W Qualification: AEC-Q101 |
на замовлення 2310 шт: термін постачання 21-31 дні (днів) |
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STL130N8F7 | STMicroelectronics |
Description: MOSFET N-CH 80V 130A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V |
на замовлення 10619 шт: термін постачання 21-31 дні (днів) |
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STL15N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 10A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 375mOhm @ 5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 5185 шт: термін постачання 21-31 дні (днів) |
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STL18N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 15A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
на замовлення 10251 шт: термін постачання 21-31 дні (днів) |
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STL40N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 40A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V |
на замовлення 2645 шт: термін постачання 21-31 дні (днів) |
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STEF4SPUR | STMicroelectronics |
Description: IC ELECTRONIC FUSE 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 10V Current - Output: 5A Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-DFN (3x3) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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STEF033PUR | STMicroelectronics |
Description: IC ELECTRONIC FUSE 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.1V ~ 8V Current - Output: 3.6A Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 10-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEF4SPUR | STMicroelectronics |
Description: IC ELECTRONIC FUSE 10DFNPackaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 10V Current - Output: 5A Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-DFN (3x3) |
на замовлення 32671 шт: термін постачання 21-31 дні (днів) |
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STEF033PUR | STMicroelectronics |
Description: IC ELECTRONIC FUSE 10DFNPackaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.1V ~ 8V Current - Output: 3.6A Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 10-DFN (3x3) |
на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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BALF-SPI-01D3 | STMicroelectronics |
Description: BALUN 779MHZ-956MHZ 6UFBGA FCBGAPackaging: Cut Tape (CT) Package / Case: 6-UFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 779MHz ~ 956MHz Impedance - Unbalanced/Balanced: 50 / -Ohm Insertion Loss (Max): 2.0dB Return Loss (Min): 23dB Phase Difference: 10° |
на замовлення 50165 шт: термін постачання 21-31 дні (днів) |
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ESDALC5-4BN4 | STMicroelectronics |
Description: TVS DIODE 5VWM 14.5VC 4UQFN Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 13pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 4-uQFN (1x0.8) Bidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 14.5V Power - Peak Pulse: 60W Power Line Protection: No |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BAL-CW1250D3 | STMicroelectronics |
Description: BALUN 2.4GHZ-2.5GHZ 5UFBGA FCBGAPackaging: Tape & Reel (TR) Package / Case: 5-UFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.5GHz Impedance - Unbalanced/Balanced: 50 / -Ohm Insertion Loss (Max): 0.97dB Return Loss (Min): 21dB Phase Difference: 10° |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BALF-SPI-01D3 | STMicroelectronics |
Description: BALUN 779MHZ-956MHZ 6UFBGA FCBGAPackaging: Tape & Reel (TR) Package / Case: 6-UFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 779MHz ~ 956MHz Impedance - Unbalanced/Balanced: 50 / -Ohm Insertion Loss (Max): 2.0dB Return Loss (Min): 23dB Phase Difference: 10° |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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DSL02-005SC5 | STMicroelectronics |
Description: TVS DIODE 5VWM 18VC SOT23-5LPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 24A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOT-23-5 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 18V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DSL02-010SC5 | STMicroelectronics |
Description: TVS DIODE 10VWM 24VC SOT235Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 24A (8/20µs) Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: SOT-23-5 Bidirectional Channels: 1 Voltage - Breakdown (Min): 11V Voltage - Clamping (Max) @ Ipp: 24V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ESDALC5-4BN4 | STMicroelectronics |
Description: TVS DIODE 5VWM 14.5VC 4UQFN Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 13pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 4-uQFN (1x0.8) Bidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 14.5V Power - Peak Pulse: 60W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTW69-1200N | STMicroelectronics |
Description: SCR 1.2KV 50A TOP3Packaging: Tube Package / Case: TOP-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 763A Current - On State (It (AV)) (Max): 31 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 10 µA Supplier Device Package: TOP3 Part Status: Active Current - On State (It (RMS)) (Max): 50 A Voltage - Off State: 1.2 kV |
на замовлення 561 шт: термін постачання 21-31 дні (днів) |
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CLT01-38S4 | STMicroelectronics |
Description: TVS DEVICE MIXED 38HTSSOPPackaging: Tube Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Applications: General Purpose Technology: Mixed Technology Supplier Device Package: 38-HTSSOP Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STTH60AC06CPF | STMicroelectronics |
Description: DIODE ARRAY GP 600V 30A TO-3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STTH60AC06CW | STMicroelectronics |
Description: DIODE ARRAY GP 600V 30A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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T1235T-8FP | STMicroelectronics |
Description: TRIAC ALTERNSTR 800V 12A TO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 90A, 95A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220FPAB Part Status: Last Time Buy Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V |
на замовлення 217 шт: термін постачання 21-31 дні (днів) |
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T1610H-6T | STMicroelectronics |
Description: TRIAC SENS GATE 600V 16A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 15 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220 Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 600 V |
на замовлення 2183 шт: термін постачання 21-31 дні (днів) |
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T1635T-8FP | STMicroelectronics |
Description: TRIAC ALTERNISTOR 800V TO220FPABPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220FPAB Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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T1635T-8T | STMicroelectronics |
Description: TRIAC ALTERNISTOR 800V 16A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220 Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
на замовлення 966 шт: термін постачання 21-31 дні (днів) |
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T635T-8T | STMicroelectronics |
Description: TRIAC ALTERNISTOR 800V 6A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 45A, 47A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220 Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 800 V |
на замовлення 1958 шт: термін постачання 21-31 дні (днів) |
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T835T-8FP | STMicroelectronics |
Description: TRIAC ALTRNSTR 800V 8A TO220FPABPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220FPAB Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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T835T-8T | STMicroelectronics |
Description: TRIAC ALTERNISTOR 800V 8A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220 Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
на замовлення 1963 шт: термін постачання 21-31 дні (днів) |
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ACST1035-8FP | STMicroelectronics |
Description: TRIAC 800V 10A TO220FPABPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: TO-220FPAB Part Status: Last Time Buy |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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PM6613NTR | STMicroelectronics | Description: IC BAT CHG MULT-CHEM 2-4CL 20QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STTH15AC06CFP | STMicroelectronics |
Description: DIODE ARR GP 600V 7.5A TO220FPABPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: TO-220FPAB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 7.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 347 шт: термін постачання 21-31 дні (днів) |
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STTH15AC06CT | STMicroelectronics |
Description: DIODE ARRAY GP 600V 7.5A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: TO-220 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 7.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 2242 шт: термін постачання 21-31 дні (днів) |
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STTH30AC06CP | STMicroelectronics |
Description: DIODE ARRAY GP 600V 15A TO-3PFPackaging: Tube Package / Case: TO-3PF Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-3PF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STTH30AC06CPF | STMicroelectronics |
Description: DIODE ARRAY GP 600V 15A TO-3PFPackaging: Tube Package / Case: TO-3PF Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-3PF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 178 шт: термін постачання 21-31 дні (днів) |
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STTH30AC06CWL | STMicroelectronics |
Description: DIODE ARRAY GP 600V 15A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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STTH60AC06CP | STMicroelectronics |
Description: DIODE ARRAY GP 600V 30A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-3P Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M24128-DFCS6TP/K | STMicroelectronics |
Description: IC EEPROM 128KBIT I2C 8WLCSPPackaging: Cut Tape (CT) Package / Case: 8-UFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
на замовлення 21049 шт: термін постачання 21-31 дні (днів) |
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M24C64-DFCT6TP/K | STMicroelectronics |
Description: IC EEPROM 64KBIT I2C 1MHZ 8WLCSPPackaging: Cut Tape (CT) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 41682 шт: термін постачання 21-31 дні (днів) |
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M24M02-DRCS6TP/K | STMicroelectronics |
Description: IC EEPROM 2MBIT I2C 1MHZ 8WLCSPPackaging: Cut Tape (CT) Package / Case: 8-UBGA, WLCSP Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP (3.56x2.01) Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
на замовлення 8648 шт: термін постачання 21-31 дні (днів) |
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M95M02-DRCS6TP/K | STMicroelectronics |
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSPPackaging: Cut Tape (CT) Package / Case: 8-UBGA, WLCSP Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP (3.56x2.01) Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
на замовлення 9725 шт: термін постачання 21-31 дні (днів) |
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M24128-DFCS6TP/K | STMicroelectronics |
Description: IC EEPROM 128KBIT I2C 8WLCSPPackaging: Tape & Reel (TR) Package / Case: 8-UFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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M24C64-DFCT6TP/K | STMicroelectronics |
Description: IC EEPROM 64KBIT I2C 1MHZ 8WLCSPPackaging: Tape & Reel (TR) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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M24M02-DRCS6TP/K | STMicroelectronics |
Description: IC EEPROM 2MBIT I2C 1MHZ 8WLCSPPackaging: Tape & Reel (TR) Package / Case: 8-UBGA, WLCSP Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP (3.56x2.01) Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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M95M02-DRCS6TP/K | STMicroelectronics |
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSPPackaging: Tape & Reel (TR) Package / Case: 8-UBGA, WLCSP Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP (3.56x2.01) Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
на замовлення 8490 шт: термін постачання 21-31 дні (днів) |
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STQ2HNK60ZR-AP | STMicroelectronics |
Description: MOSFET N-CH 600V 500MA TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
на замовлення 6703 шт: термін постачання 21-31 дні (днів) |
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| L4938EDTR-E |
Виробник: STMicroelectronics
Description: IC REG LINEAR POS ADJ 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 100mA, 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 28V
Number of Regulators: 2
Supplier Device Package: 20-SO
Voltage - Output (Max): 5.1V
Voltage - Output (Min/Fixed): 4.9V (5V)
Control Features: Enable, Reset
Part Status: Active
Voltage Dropout (Max): 0.4V @ 100mA, 0.6V @ 400mA
Protection Features: Over Temperature
Description: IC REG LINEAR POS ADJ 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 100mA, 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 28V
Number of Regulators: 2
Supplier Device Package: 20-SO
Voltage - Output (Max): 5.1V
Voltage - Output (Min/Fixed): 4.9V (5V)
Control Features: Enable, Reset
Part Status: Active
Voltage Dropout (Max): 0.4V @ 100mA, 0.6V @ 400mA
Protection Features: Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| L5975DTR |
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 3A 8SO
Packaging: Tape & Reel (TR)
Output Type: Adjustable
Mounting Type: Surface Mount
Function: Step-Down
Current - Output: 3A
Output Configuration: Positive
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-SO
Voltage - Output (Max): 36V
Voltage - Input (Min): 4V
Part Status: Active
Description: IC REG BUCK ADJ 3A 8SO
Packaging: Tape & Reel (TR)
Output Type: Adjustable
Mounting Type: Surface Mount
Function: Step-Down
Current - Output: 3A
Output Configuration: Positive
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-SO
Voltage - Output (Max): 36V
Voltage - Input (Min): 4V
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| STM32L100C-DISCO |
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Виробник: STMicroelectronics
Description: DISCOVERY STM32L100 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L100
Platform: Discovery
Part Status: Obsolete
Description: DISCOVERY STM32L100 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L100
Platform: Discovery
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| L3GD20HTR |
Виробник: STMicroelectronics
Description: IC MEMS MOTION SENSOR 16LLGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Package / Case: 16-LGA
Output Type: I2C, SPI
Type: Digital
Axis: X (Pitch), Y (Roll), Z (Yaw)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 3.6V
Bandwidth: 6.25Hz ~ 400Hz
Range °/s: ±245, 500, 2000
Sensitivity (LSB/(°/s)): 8.75 ~ 70
Part Status: Obsolete
Current - Supply: 5 mA
Description: IC MEMS MOTION SENSOR 16LLGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Package / Case: 16-LGA
Output Type: I2C, SPI
Type: Digital
Axis: X (Pitch), Y (Roll), Z (Yaw)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 3.6V
Bandwidth: 6.25Hz ~ 400Hz
Range °/s: ±245, 500, 2000
Sensitivity (LSB/(°/s)): 8.75 ~ 70
Part Status: Obsolete
Current - Supply: 5 mA
товару немає в наявності
В кошику
од. на суму грн.
| L3GD20HTR |
Виробник: STMicroelectronics
Description: IC MEMS MOTION SENSOR 16LLGA
Packaging: Cut Tape (CT)
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Package / Case: 16-LGA
Output Type: I2C, SPI
Type: Digital
Axis: X (Pitch), Y (Roll), Z (Yaw)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 3.6V
Bandwidth: 6.25Hz ~ 400Hz
Range °/s: ±245, 500, 2000
Sensitivity (LSB/(°/s)): 8.75 ~ 70
Part Status: Obsolete
Current - Supply: 5 mA
Description: IC MEMS MOTION SENSOR 16LLGA
Packaging: Cut Tape (CT)
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Package / Case: 16-LGA
Output Type: I2C, SPI
Type: Digital
Axis: X (Pitch), Y (Roll), Z (Yaw)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 3.6V
Bandwidth: 6.25Hz ~ 400Hz
Range °/s: ±245, 500, 2000
Sensitivity (LSB/(°/s)): 8.75 ~ 70
Part Status: Obsolete
Current - Supply: 5 mA
товару немає в наявності
В кошику
од. на суму грн.
| STB18N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
на замовлення 1632 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.38 грн |
| 10+ | 139.66 грн |
| 100+ | 96.70 грн |
| 500+ | 76.22 грн |
| STB6N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
на замовлення 6839 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.04 грн |
| 10+ | 96.56 грн |
| 100+ | 65.51 грн |
| 500+ | 48.99 грн |
| STB7ANM60N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Qualification: AEC-Q101
на замовлення 1748 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.84 грн |
| 10+ | 101.89 грн |
| 100+ | 71.36 грн |
| 500+ | 53.56 грн |
| STB9NK80Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 5.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
Qualification: AEC-Q101
на замовлення 926 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 178.87 грн |
| 10+ | 143.22 грн |
| 100+ | 113.96 грн |
| 500+ | 90.49 грн |
| STD10N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
Description: MOSFET N-CH 600V 7.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
на замовлення 3682 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.17 грн |
| 10+ | 79.65 грн |
| 100+ | 53.53 грн |
| 500+ | 39.71 грн |
| 1000+ | 36.32 грн |
| STD26P3LLH6 |
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Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET P-CH 30V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 37997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.04 грн |
| 10+ | 83.70 грн |
| 100+ | 56.32 грн |
| 500+ | 41.86 грн |
| 1000+ | 38.71 грн |
| STD6N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STD7ANM60N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Qualification: AEC-Q101
на замовлення 5503 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.60 грн |
| 10+ | 94.78 грн |
| 100+ | 67.80 грн |
| 500+ | 50.78 грн |
| 1000+ | 48.93 грн |
| STD7N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
на замовлення 7584 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.52 грн |
| 10+ | 81.60 грн |
| 100+ | 54.87 грн |
| 500+ | 40.74 грн |
| 1000+ | 37.46 грн |
| STD80N6F6 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| STDLED625H |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Description: MOSFET N-CH 620V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.25 грн |
| 10+ | 94.13 грн |
| 100+ | 73.20 грн |
| 500+ | 58.23 грн |
| 1000+ | 47.44 грн |
| STGD20N40LZ |
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Виробник: STMicroelectronics
Description: IGBT 390V 25A 125W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/4.3µs
Test Condition: 300V, 10A, 1kOhm, 5V
Gate Charge: 24 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Qualification: AEC-Q101
Description: IGBT 390V 25A 125W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/4.3µs
Test Condition: 300V, 10A, 1kOhm, 5V
Gate Charge: 24 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Qualification: AEC-Q101
на замовлення 2310 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 200.71 грн |
| 10+ | 125.02 грн |
| 100+ | 85.98 грн |
| 500+ | 65.03 грн |
| 1000+ | 60.00 грн |
| STL130N8F7 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
на замовлення 10619 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 281.33 грн |
| 10+ | 176.94 грн |
| 100+ | 123.40 грн |
| 500+ | 94.33 грн |
| 1000+ | 87.43 грн |
| STL15N65M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CH 650V 10A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 5185 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 256.97 грн |
| 10+ | 161.65 грн |
| 100+ | 112.86 грн |
| 500+ | 92.24 грн |
| STL18N65M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 15A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Description: MOSFET N-CH 650V 15A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 10251 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 277.13 грн |
| 10+ | 174.84 грн |
| 100+ | 122.55 грн |
| 500+ | 102.07 грн |
| STL40N10F7 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 40A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Description: MOSFET N-CH 100V 40A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
на замовлення 2645 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.52 грн |
| 10+ | 95.26 грн |
| 100+ | 64.59 грн |
| 500+ | 48.28 грн |
| 1000+ | 46.03 грн |
| STEF4SPUR |
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Виробник: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 10V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-DFN (3x3)
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 10V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-DFN (3x3)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 53.52 грн |
| STEF033PUR |
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Виробник: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 8V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 8V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
товару немає в наявності
В кошику
од. на суму грн.
| STEF4SPUR |
![]() |
Виробник: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 10V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-DFN (3x3)
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 10V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-DFN (3x3)
на замовлення 32671 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.25 грн |
| 10+ | 84.43 грн |
| 25+ | 76.63 грн |
| 100+ | 63.95 грн |
| 250+ | 60.15 грн |
| 500+ | 57.86 грн |
| 1000+ | 55.06 грн |
| STEF033PUR |
![]() |
Виробник: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 8V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 8V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.66 грн |
| 10+ | 59.44 грн |
| 25+ | 53.70 грн |
| 100+ | 44.43 грн |
| 250+ | 41.60 грн |
| 500+ | 39.89 грн |
| 1000+ | 37.86 грн |
| BALF-SPI-01D3 |
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Виробник: STMicroelectronics
Description: BALUN 779MHZ-956MHZ 6UFBGA FCBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 956MHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.0dB
Return Loss (Min): 23dB
Phase Difference: 10°
Description: BALUN 779MHZ-956MHZ 6UFBGA FCBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 956MHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.0dB
Return Loss (Min): 23dB
Phase Difference: 10°
на замовлення 50165 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 13+ | 25.39 грн |
| 25+ | 24.42 грн |
| 50+ | 22.27 грн |
| 100+ | 21.61 грн |
| 250+ | 20.77 грн |
| 500+ | 19.82 грн |
| 1000+ | 19.23 грн |
| ESDALC5-4BN4 |
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 14.5VC 4UQFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 4-uQFN (1x0.8)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 60W
Power Line Protection: No
Description: TVS DIODE 5VWM 14.5VC 4UQFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 4-uQFN (1x0.8)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 60W
Power Line Protection: No
на замовлення 8 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BAL-CW1250D3 |
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Виробник: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 5UFBGA FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 0.97dB
Return Loss (Min): 21dB
Phase Difference: 10°
Description: BALUN 2.4GHZ-2.5GHZ 5UFBGA FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 0.97dB
Return Loss (Min): 21dB
Phase Difference: 10°
товару немає в наявності
В кошику
од. на суму грн.
| BALF-SPI-01D3 |
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Виробник: STMicroelectronics
Description: BALUN 779MHZ-956MHZ 6UFBGA FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 956MHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.0dB
Return Loss (Min): 23dB
Phase Difference: 10°
Description: BALUN 779MHZ-956MHZ 6UFBGA FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 956MHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.0dB
Return Loss (Min): 23dB
Phase Difference: 10°
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 17.12 грн |
| 10000+ | 15.98 грн |
| 15000+ | 15.69 грн |
| 25000+ | 14.39 грн |
| 35000+ | 14.17 грн |
| DSL02-005SC5 |
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Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 18VC SOT23-5L
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-5
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18V
Power Line Protection: No
Description: TVS DIODE 5VWM 18VC SOT23-5L
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-5
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DSL02-010SC5 |
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Виробник: STMicroelectronics
Description: TVS DIODE 10VWM 24VC SOT235
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SOT-23-5
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: No
Description: TVS DIODE 10VWM 24VC SOT235
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SOT-23-5
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| ESDALC5-4BN4 |
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 14.5VC 4UQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 4-uQFN (1x0.8)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 60W
Power Line Protection: No
Description: TVS DIODE 5VWM 14.5VC 4UQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 4-uQFN (1x0.8)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 60W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| BTW69-1200N |
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Виробник: STMicroelectronics
Description: SCR 1.2KV 50A TOP3
Packaging: Tube
Package / Case: TOP-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 763A
Current - On State (It (AV)) (Max): 31 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TOP3
Part Status: Active
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 50A TOP3
Packaging: Tube
Package / Case: TOP-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 763A
Current - On State (It (AV)) (Max): 31 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TOP3
Part Status: Active
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.2 kV
на замовлення 561 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 584.49 грн |
| 30+ | 327.27 грн |
| 120+ | 275.41 грн |
| 510+ | 227.12 грн |
| CLT01-38S4 |
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Виробник: STMicroelectronics
Description: TVS DEVICE MIXED 38HTSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: 38-HTSSOP
Part Status: Active
Number of Circuits: 1
Description: TVS DEVICE MIXED 38HTSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: 38-HTSSOP
Part Status: Active
Number of Circuits: 1
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| STTH60AC06CPF |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| STTH60AC06CW |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 281.33 грн |
| T1235T-8FP |
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Виробник: STMicroelectronics
Description: TRIAC ALTERNSTR 800V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 90A, 95A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Last Time Buy
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNSTR 800V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 90A, 95A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Last Time Buy
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
на замовлення 217 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 188.95 грн |
| 50+ | 89.76 грн |
| 100+ | 80.74 грн |
| T1610H-6T |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 600V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
на замовлення 2183 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.33 грн |
| 50+ | 59.36 грн |
| 100+ | 53.02 грн |
| 500+ | 39.32 грн |
| 1000+ | 35.97 грн |
| 2000+ | 33.14 грн |
| T1635T-8FP |
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Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
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| T1635T-8T |
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Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 966 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.01 грн |
| 50+ | 60.13 грн |
| 100+ | 53.64 грн |
| 500+ | 39.63 грн |
| T635T-8T |
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Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 45A, 47A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 45A, 47A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
на замовлення 1958 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.58 грн |
| 50+ | 58.21 грн |
| 100+ | 46.13 грн |
| 500+ | 36.70 грн |
| 1000+ | 36.30 грн |
| T835T-8FP |
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Виробник: STMicroelectronics
Description: TRIAC ALTRNSTR 800V 8A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: TRIAC ALTRNSTR 800V 8A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
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| T835T-8T |
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Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 1963 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 104.97 грн |
| 50+ | 47.86 грн |
| 100+ | 42.61 грн |
| 500+ | 31.32 грн |
| 1000+ | 28.53 грн |
| ACST1035-8FP |
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Виробник: STMicroelectronics
Description: TRIAC 800V 10A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: TO-220FPAB
Part Status: Last Time Buy
Description: TRIAC 800V 10A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: TO-220FPAB
Part Status: Last Time Buy
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 168.80 грн |
| 50+ | 79.36 грн |
| 100+ | 71.23 грн |
| 500+ | 53.46 грн |
| 1000+ | 49.15 грн |
| PM6613NTR |
Виробник: STMicroelectronics
Description: IC BAT CHG MULT-CHEM 2-4CL 20QFN
Description: IC BAT CHG MULT-CHEM 2-4CL 20QFN
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| STTH15AC06CFP |
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Виробник: STMicroelectronics
Description: DIODE ARR GP 600V 7.5A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE ARR GP 600V 7.5A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 347 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.04 грн |
| 50+ | 63.04 грн |
| 100+ | 56.36 грн |
| STTH15AC06CT |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 7.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE ARRAY GP 600V 7.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 2242 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.02 грн |
| 50+ | 31.75 грн |
| 100+ | 31.73 грн |
| 500+ | 28.84 грн |
| 1000+ | 28.38 грн |
| 2000+ | 27.88 грн |
| STTH30AC06CP |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 15A TO-3PF
Packaging: Tube
Package / Case: TO-3PF
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 15A TO-3PF
Packaging: Tube
Package / Case: TO-3PF
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| STTH30AC06CPF |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 15A TO-3PF
Packaging: Tube
Package / Case: TO-3PF
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 15A TO-3PF
Packaging: Tube
Package / Case: TO-3PF
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 178 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.34 грн |
| 30+ | 113.32 грн |
| 120+ | 91.91 грн |
| STTH30AC06CWL |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 251.09 грн |
| 30+ | 106.83 грн |
| 120+ | 96.34 грн |
| 510+ | 84.14 грн |
| STTH60AC06CP |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| M24128-DFCS6TP/K |
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Виробник: STMicroelectronics
Description: IC EEPROM 128KBIT I2C 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT I2C 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
на замовлення 21049 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 11+ | 32.27 грн |
| 25+ | 31.41 грн |
| 50+ | 28.88 грн |
| 100+ | 28.25 грн |
| 250+ | 27.41 грн |
| 500+ | 26.34 грн |
| 1000+ | 25.72 грн |
| M24C64-DFCT6TP/K |
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Виробник: STMicroelectronics
Description: IC EEPROM 64KBIT I2C 1MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 41682 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.64 грн |
| 25+ | 32.74 грн |
| 50+ | 30.10 грн |
| 100+ | 29.45 грн |
| 250+ | 28.57 грн |
| 500+ | 27.46 грн |
| 1000+ | 26.81 грн |
| M24M02-DRCS6TP/K |
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Виробник: STMicroelectronics
Description: IC EEPROM 2MBIT I2C 1MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2MBIT I2C 1MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
на замовлення 8648 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.37 грн |
| 10+ | 238.72 грн |
| 25+ | 231.73 грн |
| 50+ | 212.50 грн |
| 100+ | 207.49 грн |
| 250+ | 200.91 грн |
| 500+ | 192.76 грн |
| 1000+ | 187.95 грн |
| M95M02-DRCS6TP/K |
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Виробник: STMicroelectronics
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
на замовлення 9725 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.82 грн |
| 10+ | 212.28 грн |
| 25+ | 206.02 грн |
| 50+ | 188.89 грн |
| 100+ | 184.45 грн |
| 250+ | 178.59 грн |
| 500+ | 171.34 грн |
| 1000+ | 168.02 грн |
| M24128-DFCS6TP/K |
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Виробник: STMicroelectronics
Description: IC EEPROM 128KBIT I2C 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT I2C 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 23.81 грн |
| 5000+ | 22.37 грн |
| 7500+ | 22.04 грн |
| 12500+ | 20.30 грн |
| 17500+ | 20.05 грн |
| M24C64-DFCT6TP/K |
![]() |
Виробник: STMicroelectronics
Description: IC EEPROM 64KBIT I2C 1MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 24.82 грн |
| 5000+ | 23.31 грн |
| 7500+ | 22.97 грн |
| 12500+ | 21.15 грн |
| 17500+ | 20.89 грн |
| 25000+ | 20.71 грн |
| M24M02-DRCS6TP/K |
![]() |
Виробник: STMicroelectronics
Description: IC EEPROM 2MBIT I2C 1MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2MBIT I2C 1MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 204.42 грн |
| M95M02-DRCS6TP/K |
![]() |
Виробник: STMicroelectronics
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
на замовлення 8490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 196.24 грн |
| STQ2HNK60ZR-AP |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 500MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 600V 500MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 6703 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.82 грн |
| 10+ | 62.59 грн |
| 100+ | 42.37 грн |
| 500+ | 31.06 грн |
| 1000+ | 28.25 грн |





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