Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164677) > Сторінка 2661 з 2745
| Фото | Назва | Виробник | Інформація |
Доступність |
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MJD127T4 | STMicroelectronics |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of package: reel; tape |
на замовлення 1389 шт: термін постачання 21-30 дні (днів) |
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STGP10NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 65W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 19nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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STM32F411RCT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 50 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG Kind of architecture: Cortex M4 Memory: 128kB SRAM; 256kB FLASH Family: STM32F4 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM32F411RET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 50 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG Kind of architecture: Cortex M4 Memory: 128kB SRAM; 512kB FLASH Family: STM32F4 Kind of core: 32-bit |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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STM32F411VET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; LQFP100; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 81 Case: LQFP100 Supply voltage: 1.7...3.6V DC Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG Kind of architecture: Cortex M4 Memory: 128kB SRAM; 512kB FLASH Family: STM32F4 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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Z0109MA 1AA2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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Z0109MA 5AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Mounting: THT Kind of package: tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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Z0109NN6AA4 | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 1A; SOT223; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 10mA Mounting: SMD Kind of package: reel; tape |
на замовлення 906 шт: термін постачання 21-30 дні (днів) |
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STP120NF10 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W Polarisation: unipolar Case: TO220-3 Kind of channel: enhancement Technology: STripFET™ II Type of transistor: N-MOSFET Mounting: THT Drain current: 77A Drain-source voltage: 100V On-state resistance: 10.5mΩ Power dissipation: 312W Gate-source voltage: ±20V Kind of package: tube |
на замовлення 555 шт: термін постачання 21-30 дні (днів) |
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MJD31CT4 | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape |
на замовлення 929 шт: термін постачання 21-30 дні (днів) |
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LM317LZ | STMicroelectronics |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 100mA; TO92 Output voltage: 1.2...37V Mounting: THT Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Output current: 0.1A Number of channels: 1 Kind of voltage regulator: adjustable; linear Kind of package: bulk Case: TO92 Manufacturer series: LM317L |
на замовлення 12747 шт: термін постачання 21-30 дні (днів) |
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LM317LZ-AP | STMicroelectronics |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Output voltage: 1.2...37V Mounting: THT Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Output current: 0.1A Number of channels: 1 Kind of voltage regulator: adjustable; linear Kind of package: Ammo Pack Case: TO92 Manufacturer series: LM317L |
на замовлення 4693 шт: термін постачання 21-30 дні (днів) |
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LM317LZ-TR | STMicroelectronics |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Output voltage: 1.2...37V Mounting: THT Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Output current: 0.1A Number of channels: 1 Kind of voltage regulator: adjustable; linear Kind of package: reel; tape Case: TO92 Manufacturer series: LM317L |
на замовлення 5994 шт: термін постачання 21-30 дні (днів) |
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BTB16-800CWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube Technology: Snubberless™ |
на замовлення 361 шт: термін постачання 21-30 дні (днів) |
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BTB16-800SWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 10mA; logic level Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10mA Mounting: THT Kind of package: tube Features of semiconductor devices: logic level |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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USBLC6-4SC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; bidirectional; SOT23-6; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: bidirectional Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5V Number of channels: 4 Kind of package: reel; tape Application: Ethernet; USB Version: ESD Leakage current: 10nA |
на замовлення 8166 шт: термін постачання 21-30 дні (днів) |
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USBLC6-4SC6Y | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; bidirectional; SOT23-6; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: bidirectional Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5V Number of channels: 4 Kind of package: reel; tape Application: automotive industry; Ethernet; USB Version: ESD |
на замовлення 2462 шт: термін постачання 21-30 дні (днів) |
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LM258D | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 1mV; tube Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...30V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 0.6V/μs Integrated circuit features: low power Input offset voltage: 1mV Kind of package: tube |
на замовлення 1386 шт: термін постачання 21-30 дні (днів) |
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LM258DT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 1mV Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...30V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 0.6V/μs Integrated circuit features: low power Input offset voltage: 1mV Kind of package: reel; tape |
на замовлення 3412 шт: термін постачання 21-30 дні (днів) |
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STP80NF55-06 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; 300W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ6.0A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 7.05V; 170A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 7.05V Max. forward impulse current: 170A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 50µA Manufacturer series: SMAJ Kind of package: reel; tape |
на замовлення 2771 шт: термін постачання 21-30 дні (днів) |
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STP240N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Pulsed drain current: 440A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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| STM1061N34WX6F | STMicroelectronics |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; 0.7÷6VDC; SOT23-3; Ch: 1 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Active logical level: low Supply voltage: 0.7...6V DC Case: SOT23-3 Operating temperature: -40...85°C Mounting: SMD Threshold on-voltage: 3.4V Number of channels: 1 Kind of output: open drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STTH6003CW | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; TO247-3; 55ns Semiconductor structure: common cathode; double Max. off-state voltage: 300V Load current: 30A x2 Case: TO247-3 Max. forward voltage: 1V Max. forward impulse current: 0.3kA Max. load current: 60A Reverse recovery time: 55ns Features of semiconductor devices: ultrafast switching Type of diode: rectifying Mounting: THT Kind of package: tube |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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L78M24ACDT-TR | STMicroelectronics |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 24V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: L78M Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 27...38V |
на замовлення 1860 шт: термін постачання 21-30 дні (днів) |
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L78M24CDT-TR | STMicroelectronics |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 24V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: L78M Kind of package: tube Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 27...38V |
на замовлення 7335 шт: термін постачання 21-30 дні (днів) |
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L78M24CDT-TR | STMicroelectronics |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 24V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: L78M Kind of package: reel; tape Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 27...38V |
на замовлення 2010 шт: термін постачання 21-30 дні (днів) |
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L78M24CV | STMicroelectronics |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 24V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: L78M Kind of package: tube Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.51...0.6mm Input voltage: 27...38V |
на замовлення 56 шт: термін постачання 21-30 дні (днів) |
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L78M24CV-DG | STMicroelectronics |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 0.002V Output voltage: 24V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: L78M Kind of package: tube Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 1.23...1.32mm Input voltage: 27...38V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM32F0DISCOVERY | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; prototype board; Comp: STM32F051R8T6 Type of development kit: STM32 Kit contents: prototype board Components: STM32F051R8T6 Kind of connector: pin strips; USB B mini Kind of architecture: Cortex M0 Interface: USB |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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1.5KE300A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 256V Breakdown voltage: 300V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
на замовлення 266 шт: термін постачання 21-30 дні (днів) |
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| 1.5KE300ARL | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 256V Breakdown voltage: 300V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STP6NK60ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.8A Power dissipation: 110W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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STW26NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 140W Case: TO247 Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 299 шт: термін постачання 21-30 дні (днів) |
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LMV321ILT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 1; SOT23-5; 2.7÷6VDC Slew rate: 0.45V/μs Voltage supply range: 2.7...6V DC Bandwidth: 1MHz Integrated circuit features: low power; rail-to-rail Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SOT23-5 Number of channels: 1 Mounting: SMT Operating temperature: -40...125°C |
на замовлення 6419 шт: термін постачання 21-30 дні (днів) |
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LMV321IYLT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.3MHz; Ch: 1; SOT23-5; 2.7÷6VDC Input bias current: 95nA Input offset current: 25nA Input offset voltage: 6mV Slew rate: 0.45V/μs Voltage supply range: 2.7...6V DC Bandwidth: 1.3MHz Application: automotive industry Integrated circuit features: low voltage; rail-to-rail Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SOT23-5 Number of channels: 1 Mounting: SMT Operating temperature: -40...125°C |
на замовлення 2881 шт: термін постачання 21-30 дні (днів) |
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LMV321LICT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.3MHz; Ch: 1; SC70-5; 2.7÷5.5VDC Input offset voltage: 1mV Slew rate: 0.7V/μs Voltage supply range: 2.7...5.5V DC Bandwidth: 1.3MHz Integrated circuit features: rail-to-rail output Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SC70-5 Number of channels: 1 Mounting: SMT Operating temperature: -40...125°C |
на замовлення 2534 шт: термін постачання 21-30 дні (днів) |
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LMV321LILT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.3MHz; Ch: 1; SOT23-5; 2.7÷5.5VDC Input offset voltage: 1mV Slew rate: 0.7V/μs Voltage supply range: 2.7...5.5V DC Bandwidth: 1.3MHz Integrated circuit features: low power; rail-to-rail output Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SOT23-5 Number of channels: 1 Mounting: SMT Operating temperature: -40...125°C |
на замовлення 15307 шт: термін постачання 21-30 дні (днів) |
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LMV321RILT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 1; SOT23-5; 2.7÷6VDC Input offset voltage: 0.1mV Slew rate: 0.35V/μs Voltage supply range: 2.7...6V DC Bandwidth: 1MHz Integrated circuit features: low power; rail-to-rail Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SOT23-5 Number of channels: 1 Mounting: SMT Operating temperature: -40...125°C |
на замовлення 592 шт: термін постачання 21-30 дні (днів) |
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LMV321RIYLT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 1; SOT23-5; 2.7÷6VDC Input offset voltage: 0.1mV Slew rate: 0.35V/μs Voltage supply range: 2.7...6V DC Bandwidth: 1MHz Integrated circuit features: low power; rail-to-rail Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SOT23-5 Number of channels: 1 Mounting: SMT Operating temperature: -40...125°C |
на замовлення 2852 шт: термін постачання 21-30 дні (днів) |
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MJE350 | STMicroelectronics |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 20W; SOT32 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: SOT32 Mounting: THT Kind of package: tube |
на замовлення 456 шт: термін постачання 21-30 дні (днів) |
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| STD4N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Pulsed drain current: 12A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STF4N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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STP4N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STU4N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STP15N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 375mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Pulsed drain current: 56A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STD16N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 710V Drain current: 12A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 279mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2335 шт: термін постачання 21-30 дні (днів) |
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STF16N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 279mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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| STP16N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19.5nC Pulsed drain current: 44A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STP16N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 25W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Power dissipation: 25W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 279mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32G071G8U6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 26 Case: UFQFPN28 Supply voltage: 1.7...3.6V DC Interface: I2C x2; I2S; SPI x2; USART x4 Kind of architecture: Cortex M0+ Memory: 36kB SRAM; 128kB FLASH Family: STM32G0 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STM32G071RBT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 60 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: I2C x2; I2S; SPI x2; USART x4 Kind of architecture: Cortex M0+ Memory: 36kB SRAM; 128kB FLASH Family: STM32G0 Kind of core: 32-bit |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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NUCLEO-G0B1RE | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; base board; Comp: STM32G0B1RE Type of development kit: STM32 Kit contents: base board Components: STM32G0B1RE Kind of connector: pin header; pin strips; USB B micro Kind of architecture: Cortex M0+ Number of add-on connectors: 2 Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Interface: USB |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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STGW20NC60VD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 883 шт: термін постачання 21-30 дні (днів) |
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STP40NF10 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: TO220-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ II Drain-source voltage: 100V Drain current: 35A On-state resistance: 28mΩ Gate-source voltage: ±20V |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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STTH10002TV1 | STMicroelectronics |
Category: Diode modulesDescription: Module: diode; double independent; 200V; If: 50Ax2; ISOTOP; screw Reverse recovery time: 30ns Max. forward voltage: 1.15V Load current: 50A x2 Max. off-state voltage: 200V Max. load current: 100A Max. forward impulse current: 750A Type of semiconductor module: diode Semiconductor structure: double independent Case: ISOTOP Mechanical mounting: screw Electrical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STTH112U | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 1A; 53ns; SMB; Ufmax: 1.1V; Ifsm: 18A Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 1A Case: SMB Max. forward voltage: 1.1V Max. forward impulse current: 18A Reverse recovery time: 53ns Features of semiconductor devices: ultrafast switching Type of diode: rectifying Mounting: SMD Kind of package: reel; tape |
на замовлення 916 шт: термін постачання 21-30 дні (днів) |
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STTH12012TV1 | STMicroelectronics |
Category: Diode modulesDescription: Module: diode; double independent; 1.2kV; If: 60Ax2; ISOTOP; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 60A x2 Case: ISOTOP Max. forward voltage: 2.25V Max. forward impulse current: 420A Electrical mounting: screw Max. load current: 120A Mechanical mounting: screw Reverse recovery time: 50ns |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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STTH1202D | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 12A; tube; Ifsm: 100A; TO220AC; 18ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 0.82V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 18ns |
на замовлення 284 шт: термін постачання 21-30 дні (днів) |
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STTH120R04TV1 | STMicroelectronics |
Category: Diode modulesDescription: Module: diode; double independent; 400V; If: 60Ax2; ISOTOP; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 0.4kV Load current: 60A x2 Case: ISOTOP Max. forward voltage: 0.95V Max. forward impulse current: 700A Electrical mounting: screw Max. load current: 120A Mechanical mounting: screw Reverse recovery time: 31ns |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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| MJD127T4 |
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Виробник: STMicroelectronics
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 1389 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.70 грн |
| 11+ | 37.89 грн |
| 100+ | 24.78 грн |
| 500+ | 19.10 грн |
| 1000+ | 17.34 грн |
| STGP10NC60KD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 131.70 грн |
| 10+ | 71.93 грн |
| 50+ | 59.15 грн |
| STM32F411RCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 256kB FLASH
Family: STM32F4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 256kB FLASH
Family: STM32F4
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F411RET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 512kB FLASH
Family: STM32F4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 512kB FLASH
Family: STM32F4
Kind of core: 32-bit
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 764.35 грн |
| 3+ | 683.38 грн |
| STM32F411VET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 81
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 512kB FLASH
Family: STM32F4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 81
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 512kB FLASH
Family: STM32F4
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| Z0109MA 1AA2 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| Z0109MA 5AL2 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: tape
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: tape
товару немає в наявності
В кошику
од. на суму грн.
| Z0109NN6AA4 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
на замовлення 906 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.57 грн |
| 18+ | 22.46 грн |
| 100+ | 13.03 грн |
| 500+ | 9.19 грн |
| STP120NF10 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W
Polarisation: unipolar
Case: TO220-3
Kind of channel: enhancement
Technology: STripFET™ II
Type of transistor: N-MOSFET
Mounting: THT
Drain current: 77A
Drain-source voltage: 100V
On-state resistance: 10.5mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W
Polarisation: unipolar
Case: TO220-3
Kind of channel: enhancement
Technology: STripFET™ II
Type of transistor: N-MOSFET
Mounting: THT
Drain current: 77A
Drain-source voltage: 100V
On-state resistance: 10.5mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Kind of package: tube
на замовлення 555 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 281.47 грн |
| 3+ | 238.98 грн |
| 10+ | 195.82 грн |
| 11+ | 86.32 грн |
| 30+ | 81.53 грн |
| MJD31CT4 |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
на замовлення 929 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.49 грн |
| 7+ | 60.58 грн |
| 10+ | 52.19 грн |
| 100+ | 31.49 грн |
| 500+ | 24.14 грн |
| LM317LZ |
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Виробник: STMicroelectronics
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 100mA; TO92
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Kind of voltage regulator: adjustable; linear
Kind of package: bulk
Case: TO92
Manufacturer series: LM317L
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 100mA; TO92
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Kind of voltage regulator: adjustable; linear
Kind of package: bulk
Case: TO92
Manufacturer series: LM317L
на замовлення 12747 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.22 грн |
| 36+ | 11.11 грн |
| 41+ | 9.91 грн |
| 100+ | 8.71 грн |
| 250+ | 8.15 грн |
| 500+ | 7.83 грн |
| 2500+ | 7.27 грн |
| LM317LZ-AP |
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Виробник: STMicroelectronics
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Kind of voltage regulator: adjustable; linear
Kind of package: Ammo Pack
Case: TO92
Manufacturer series: LM317L
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Kind of voltage regulator: adjustable; linear
Kind of package: Ammo Pack
Case: TO92
Manufacturer series: LM317L
на замовлення 4693 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.15 грн |
| 20+ | 21.02 грн |
| 50+ | 18.54 грн |
| 100+ | 17.50 грн |
| 1000+ | 14.15 грн |
| 2000+ | 13.11 грн |
| LM317LZ-TR |
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Виробник: STMicroelectronics
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Kind of voltage regulator: adjustable; linear
Kind of package: reel; tape
Case: TO92
Manufacturer series: LM317L
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Kind of voltage regulator: adjustable; linear
Kind of package: reel; tape
Case: TO92
Manufacturer series: LM317L
на замовлення 5994 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.66 грн |
| 27+ | 15.35 грн |
| 30+ | 13.67 грн |
| 35+ | 11.75 грн |
| 50+ | 10.63 грн |
| 100+ | 9.75 грн |
| 125+ | 9.51 грн |
| 250+ | 8.95 грн |
| 500+ | 8.47 грн |
| BTB16-800CWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
на замовлення 361 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.90 грн |
| 10+ | 61.86 грн |
| 25+ | 54.59 грн |
| 50+ | 49.87 грн |
| 100+ | 45.56 грн |
| BTB16-800SWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 57.55 грн |
| 10+ | 50.35 грн |
| 25+ | 43.88 грн |
| USBLC6-4SC6 | ![]() |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23-6; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Leakage current: 10nA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23-6; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Leakage current: 10nA
на замовлення 8166 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.94 грн |
| 31+ | 12.95 грн |
| 50+ | 10.31 грн |
| 100+ | 9.27 грн |
| 250+ | 8.07 грн |
| 500+ | 7.19 грн |
| 1500+ | 5.91 грн |
| 3000+ | 5.28 грн |
| 6000+ | 4.64 грн |
| USBLC6-4SC6Y |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23-6; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry; Ethernet; USB
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23-6; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry; Ethernet; USB
Version: ESD
на замовлення 2462 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.66 грн |
| 25+ | 16.62 грн |
| 26+ | 15.67 грн |
| 100+ | 12.71 грн |
| 250+ | 11.59 грн |
| 500+ | 10.71 грн |
| 1000+ | 9.83 грн |
| LM258D |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 1mV; tube
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: tube
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 1mV; tube
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: tube
на замовлення 1386 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.43 грн |
| 14+ | 29.25 грн |
| 25+ | 27.02 грн |
| 100+ | 25.58 грн |
| 500+ | 21.50 грн |
| LM258DT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 1mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 1mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
на замовлення 3412 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.63 грн |
| 36+ | 11.35 грн |
| 40+ | 10.07 грн |
| 47+ | 8.55 грн |
| 53+ | 7.59 грн |
| 100+ | 6.87 грн |
| 250+ | 6.23 грн |
| 500+ | 5.91 грн |
| 1000+ | 5.59 грн |
| STP80NF55-06 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SMAJ6.0A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.05V; 170A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 170A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 50µA
Manufacturer series: SMAJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.05V; 170A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 170A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 50µA
Manufacturer series: SMAJ
Kind of package: reel; tape
на замовлення 2771 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.91 грн |
| 40+ | 10.07 грн |
| 46+ | 8.87 грн |
| 59+ | 6.87 грн |
| 100+ | 6.31 грн |
| 250+ | 5.75 грн |
| 500+ | 5.59 грн |
| STP240N10F7 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.39 грн |
| 5+ | 207.01 грн |
| STM1061N34WX6F |
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Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; 0.7÷6VDC; SOT23-3; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Active logical level: low
Supply voltage: 0.7...6V DC
Case: SOT23-3
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 3.4V
Number of channels: 1
Kind of output: open drain
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; 0.7÷6VDC; SOT23-3; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Active logical level: low
Supply voltage: 0.7...6V DC
Case: SOT23-3
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 3.4V
Number of channels: 1
Kind of output: open drain
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од. на суму грн.
| STTH6003CW | ![]() |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; TO247-3; 55ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 300V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 1V
Max. forward impulse current: 0.3kA
Max. load current: 60A
Reverse recovery time: 55ns
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; TO247-3; 55ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 300V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 1V
Max. forward impulse current: 0.3kA
Max. load current: 60A
Reverse recovery time: 55ns
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: THT
Kind of package: tube
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 207.44 грн |
| L78M24ACDT-TR |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 27...38V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 27...38V
на замовлення 1860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 22+ | 18.30 грн |
| 25+ | 16.07 грн |
| 100+ | 13.27 грн |
| 250+ | 11.91 грн |
| 500+ | 11.03 грн |
| 1000+ | 10.31 грн |
| L78M24CDT-TR |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 27...38V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 27...38V
на замовлення 7335 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.56 грн |
| 25+ | 20.70 грн |
| 100+ | 18.78 грн |
| 500+ | 16.86 грн |
| 2500+ | 15.99 грн |
| L78M24CDT-TR |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 27...38V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 27...38V
на замовлення 2010 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.85 грн |
| 17+ | 24.62 грн |
| 19+ | 22.06 грн |
| 25+ | 19.18 грн |
| 50+ | 17.42 грн |
| 100+ | 16.15 грн |
| 250+ | 14.95 грн |
| 500+ | 14.31 грн |
| L78M24CV |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.51...0.6mm
Input voltage: 27...38V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.51...0.6mm
Input voltage: 27...38V
на замовлення 56 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.54 грн |
| 10+ | 46.20 грн |
| 25+ | 38.68 грн |
| 50+ | 34.05 грн |
| L78M24CV-DG |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.002V
Output voltage: 24V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 1.23...1.32mm
Input voltage: 27...38V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.002V
Output voltage: 24V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 1.23...1.32mm
Input voltage: 27...38V
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| STM32F0DISCOVERY |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; prototype board; Comp: STM32F051R8T6
Type of development kit: STM32
Kit contents: prototype board
Components: STM32F051R8T6
Kind of connector: pin strips; USB B mini
Kind of architecture: Cortex M0
Interface: USB
Category: STM development kits
Description: Dev.kit: STM32; prototype board; Comp: STM32F051R8T6
Type of development kit: STM32
Kit contents: prototype board
Components: STM32F051R8T6
Kind of connector: pin strips; USB B mini
Kind of architecture: Cortex M0
Interface: USB
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 807.39 грн |
| 1.5KE300A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
на замовлення 266 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.75 грн |
| 7+ | 65.70 грн |
| 10+ | 60.50 грн |
| 25+ | 50.51 грн |
| 100+ | 35.17 грн |
| 250+ | 30.05 грн |
| 1.5KE300ARL |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
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од. на суму грн.
| STP6NK60ZFP | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 104.15 грн |
| 10+ | 65.54 грн |
| 50+ | 59.15 грн |
| STW26NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 299 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 448.45 грн |
| 10+ | 254.97 грн |
| 30+ | 226.19 грн |
| 60+ | 214.21 грн |
| 90+ | 207.81 грн |
| 120+ | 204.61 грн |
| LMV321ILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; SOT23-5; 2.7÷6VDC
Slew rate: 0.45V/μs
Voltage supply range: 2.7...6V DC
Bandwidth: 1MHz
Integrated circuit features: low power; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; SOT23-5; 2.7÷6VDC
Slew rate: 0.45V/μs
Voltage supply range: 2.7...6V DC
Bandwidth: 1MHz
Integrated circuit features: low power; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
на замовлення 6419 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.43 грн |
| 16+ | 26.54 грн |
| 17+ | 23.58 грн |
| 25+ | 20.46 грн |
| 50+ | 18.46 грн |
| 100+ | 16.94 грн |
| 250+ | 15.51 грн |
| 500+ | 14.79 грн |
| 1000+ | 14.07 грн |
| LMV321IYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SOT23-5; 2.7÷6VDC
Input bias current: 95nA
Input offset current: 25nA
Input offset voltage: 6mV
Slew rate: 0.45V/μs
Voltage supply range: 2.7...6V DC
Bandwidth: 1.3MHz
Application: automotive industry
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SOT23-5; 2.7÷6VDC
Input bias current: 95nA
Input offset current: 25nA
Input offset voltage: 6mV
Slew rate: 0.45V/μs
Voltage supply range: 2.7...6V DC
Bandwidth: 1.3MHz
Application: automotive industry
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
на замовлення 2881 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 19+ | 22.06 грн |
| 21+ | 19.74 грн |
| 25+ | 17.26 грн |
| 100+ | 14.79 грн |
| 250+ | 13.91 грн |
| LMV321LICT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SC70-5; 2.7÷5.5VDC
Input offset voltage: 1mV
Slew rate: 0.7V/μs
Voltage supply range: 2.7...5.5V DC
Bandwidth: 1.3MHz
Integrated circuit features: rail-to-rail output
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SC70-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SC70-5; 2.7÷5.5VDC
Input offset voltage: 1mV
Slew rate: 0.7V/μs
Voltage supply range: 2.7...5.5V DC
Bandwidth: 1.3MHz
Integrated circuit features: rail-to-rail output
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SC70-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
на замовлення 2534 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.10 грн |
| 25+ | 16.54 грн |
| 28+ | 14.31 грн |
| 50+ | 12.95 грн |
| 100+ | 11.83 грн |
| 250+ | 10.55 грн |
| 500+ | 9.91 грн |
| 1000+ | 9.83 грн |
| LMV321LILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SOT23-5; 2.7÷5.5VDC
Input offset voltage: 1mV
Slew rate: 0.7V/μs
Voltage supply range: 2.7...5.5V DC
Bandwidth: 1.3MHz
Integrated circuit features: low power; rail-to-rail output
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 1; SOT23-5; 2.7÷5.5VDC
Input offset voltage: 1mV
Slew rate: 0.7V/μs
Voltage supply range: 2.7...5.5V DC
Bandwidth: 1.3MHz
Integrated circuit features: low power; rail-to-rail output
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
на замовлення 15307 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.38 грн |
| 24+ | 16.78 грн |
| 28+ | 14.63 грн |
| 33+ | 12.23 грн |
| 100+ | 11.03 грн |
| LMV321RILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; SOT23-5; 2.7÷6VDC
Input offset voltage: 0.1mV
Slew rate: 0.35V/μs
Voltage supply range: 2.7...6V DC
Bandwidth: 1MHz
Integrated circuit features: low power; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; SOT23-5; 2.7÷6VDC
Input offset voltage: 0.1mV
Slew rate: 0.35V/μs
Voltage supply range: 2.7...6V DC
Bandwidth: 1MHz
Integrated circuit features: low power; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
на замовлення 592 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.99 грн |
| 17+ | 23.66 грн |
| 19+ | 21.10 грн |
| 25+ | 18.22 грн |
| 100+ | 15.51 грн |
| 250+ | 14.39 грн |
| LMV321RIYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; SOT23-5; 2.7÷6VDC
Input offset voltage: 0.1mV
Slew rate: 0.35V/μs
Voltage supply range: 2.7...6V DC
Bandwidth: 1MHz
Integrated circuit features: low power; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; SOT23-5; 2.7÷6VDC
Input offset voltage: 0.1mV
Slew rate: 0.35V/μs
Voltage supply range: 2.7...6V DC
Bandwidth: 1MHz
Integrated circuit features: low power; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SOT23-5
Number of channels: 1
Mounting: SMT
Operating temperature: -40...125°C
на замовлення 2852 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.73 грн |
| 16+ | 25.58 грн |
| 25+ | 22.86 грн |
| 100+ | 19.82 грн |
| 250+ | 18.38 грн |
| 500+ | 17.58 грн |
| MJE350 |
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Виробник: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: SOT32
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: SOT32
Mounting: THT
Kind of package: tube
на замовлення 456 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.42 грн |
| 9+ | 46.84 грн |
| 11+ | 39.72 грн |
| 50+ | 26.78 грн |
| 100+ | 23.02 грн |
| STD4N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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од. на суму грн.
| STF4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.92 грн |
| 10+ | 63.14 грн |
| 50+ | 52.75 грн |
| STP4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STU4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STP15N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 56A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 56A
товару немає в наявності
В кошику
од. на суму грн.
| STD16N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2335 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.44 грн |
| 5+ | 113.50 грн |
| 10+ | 111.90 грн |
| STF16N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.27 грн |
| STP16N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 44A
товару немає в наявності
В кошику
од. на суму грн.
| STP16N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 25W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 25W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 25W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 25W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
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од. на суму грн.
| STM32G071G8U6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN28
Supply voltage: 1.7...3.6V DC
Interface: I2C x2; I2S; SPI x2; USART x4
Kind of architecture: Cortex M0+
Memory: 36kB SRAM; 128kB FLASH
Family: STM32G0
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN28
Supply voltage: 1.7...3.6V DC
Interface: I2C x2; I2S; SPI x2; USART x4
Kind of architecture: Cortex M0+
Memory: 36kB SRAM; 128kB FLASH
Family: STM32G0
Kind of core: 32-bit
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| STM32G071RBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: I2C x2; I2S; SPI x2; USART x4
Kind of architecture: Cortex M0+
Memory: 36kB SRAM; 128kB FLASH
Family: STM32G0
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: I2C x2; I2S; SPI x2; USART x4
Kind of architecture: Cortex M0+
Memory: 36kB SRAM; 128kB FLASH
Family: STM32G0
Kind of core: 32-bit
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 356.35 грн |
| 5+ | 315.71 грн |
| 25+ | 289.34 грн |
| NUCLEO-G0B1RE |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32G0B1RE
Type of development kit: STM32
Kit contents: base board
Components: STM32G0B1RE
Kind of connector: pin header; pin strips; USB B micro
Kind of architecture: Cortex M0+
Number of add-on connectors: 2
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Interface: USB
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32G0B1RE
Type of development kit: STM32
Kit contents: base board
Components: STM32G0B1RE
Kind of connector: pin header; pin strips; USB B micro
Kind of architecture: Cortex M0+
Number of add-on connectors: 2
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Interface: USB
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1015.69 грн |
| STGW20NC60VD | ![]() |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 883 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 216.91 грн |
| 10+ | 133.48 грн |
| 30+ | 113.50 грн |
| 90+ | 97.51 грн |
| 120+ | 95.91 грн |
| STP40NF10 | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 28mΩ
Gate-source voltage: ±20V
на замовлення 113 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 132.56 грн |
| 5+ | 93.51 грн |
| 10+ | 81.61 грн |
| 50+ | 59.79 грн |
| 100+ | 52.75 грн |
| STTH10002TV1 | ![]() |
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Виробник: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 50Ax2; ISOTOP; screw
Reverse recovery time: 30ns
Max. forward voltage: 1.15V
Load current: 50A x2
Max. off-state voltage: 200V
Max. load current: 100A
Max. forward impulse current: 750A
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: ISOTOP
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 50Ax2; ISOTOP; screw
Reverse recovery time: 30ns
Max. forward voltage: 1.15V
Load current: 50A x2
Max. off-state voltage: 200V
Max. load current: 100A
Max. forward impulse current: 750A
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: ISOTOP
Mechanical mounting: screw
Electrical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| STTH112U |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 1A; 53ns; SMB; Ufmax: 1.1V; Ifsm: 18A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 1A
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 18A
Reverse recovery time: 53ns
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 1A; 53ns; SMB; Ufmax: 1.1V; Ifsm: 18A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 1A
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 18A
Reverse recovery time: 53ns
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
на замовлення 916 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.94 грн |
| 28+ | 14.39 грн |
| 31+ | 13.11 грн |
| 50+ | 10.55 грн |
| 100+ | 9.59 грн |
| 500+ | 7.51 грн |
| STTH12012TV1 | ![]() |
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Виробник: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; ISOTOP; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: ISOTOP
Max. forward voltage: 2.25V
Max. forward impulse current: 420A
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Reverse recovery time: 50ns
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; ISOTOP; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: ISOTOP
Max. forward voltage: 2.25V
Max. forward impulse current: 420A
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Reverse recovery time: 50ns
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1883.33 грн |
| STTH1202D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 12A; tube; Ifsm: 100A; TO220AC; 18ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.82V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 12A; tube; Ifsm: 100A; TO220AC; 18ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.82V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 18ns
на замовлення 284 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.02 грн |
| 50+ | 27.97 грн |
| STTH120R04TV1 |
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Виробник: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 60Ax2; ISOTOP; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.4kV
Load current: 60A x2
Case: ISOTOP
Max. forward voltage: 0.95V
Max. forward impulse current: 700A
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Reverse recovery time: 31ns
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 60Ax2; ISOTOP; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.4kV
Load current: 60A x2
Case: ISOTOP
Max. forward voltage: 0.95V
Max. forward impulse current: 700A
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Reverse recovery time: 31ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1640.60 грн |
































