Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164677) > Сторінка 2666 з 2745
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NUCLEO-L053R8 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; base board; Comp: STM32L053R8T6 Kind of architecture: Cortex M0+ Interface: USB Kind of connector: Morpho plug; pin strips; pin strips; USB B mini Kit contents: base board Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Number of add-on connectors: 2 Type of development kit: STM32 Components: STM32L053R8T6 |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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NUCLEO-L073RZ | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; base board; Comp: STM32L073RZT6 Kind of architecture: Cortex M0+ Interface: USB Kind of connector: Morpho plug; pin strips; pin strips; USB B mini Kit contents: base board Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Number of add-on connectors: 2 Type of development kit: STM32 Components: STM32L073RZT6 |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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NUCLEO-L152RE | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; base board; Comp: STM32L152RET6 Kind of architecture: Cortex M3 Interface: USB Kind of connector: Morpho plug; pin strips; pin strips; USB B mini Kit contents: base board Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Number of add-on connectors: 2 Type of development kit: STM32 Components: STM32L152RET6 |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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NUCLEO-L452RE | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; base board; Comp: STM32L452RET6 Kind of architecture: Cortex M4 Interface: USB Kind of connector: Morpho plug; pin strips; pin strips; USB B mini Kit contents: base board Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Number of add-on connectors: 2 Type of development kit: STM32 Components: STM32L452RET6 |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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NUCLEO-L476RG | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; base board; Comp: STM32L476RGT6 Kind of architecture: Cortex M4 Interface: USB Kind of connector: Morpho plug; pin strips; pin strips; USB B mini Kit contents: base board Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Number of add-on connectors: 2 Type of development kit: STM32 Components: STM32L476RGT6 |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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L6388ED | STMicroelectronics |
Category: MOSFET/IGBT driversDescription: IC: driver; push-pull; SO8; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V Type of integrated circuit: driver Topology: push-pull Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver Case: SO8 Output current: 0.4A Output voltage: 580V Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Frequency: 400kHz Kind of package: tube Supply voltage: 17V |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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L6388ED013TR | STMicroelectronics |
Category: MOSFET/IGBT driversDescription: IC: driver; push-pull; SO8; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V Type of integrated circuit: driver Topology: push-pull Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver Case: SO8 Output current: 0.4A Output voltage: 580V Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Frequency: 400kHz Kind of package: reel; tape Supply voltage: 17V |
на замовлення 2300 шт: термін постачання 21-30 дні (днів) |
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LM2902WYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.3MHz; Ch: 4; SO14; 3÷30VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.3MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 0.4V/μs Operating temperature: -40...125°C Input offset voltage: 9mV Voltage supply range: 3...30V DC Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.3µA Input offset current: 40nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2902WYPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.3MHz; Ch: 4; TSSOP14; 3÷30VDC Type of integrated circuit: operational amplifier Bandwidth: 1.3MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 0.4V/μs Operating temperature: -40...125°C Input offset voltage: 9mV Voltage supply range: 3...30V DC Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.3µA Input offset current: 40nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2902YDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.3MHz; Ch: 4; SO14; 3÷30VDC; reel Type of integrated circuit: operational amplifier Bandwidth: 1.3MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 0.4V/μs Operating temperature: -40...125°C Voltage supply range: 3...30V DC Integrated circuit features: low power Kind of package: reel |
на замовлення 2082 шт: термін постачання 21-30 дні (днів) |
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LM2902YPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.3MHz; Ch: 4; TSSOP14; 3÷30VDC Type of integrated circuit: operational amplifier Bandwidth: 1.3MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 0.4V/μs Quiescent current: 375µA Operating temperature: -40...125°C Input offset voltage: 9mV Voltage supply range: 3...30V DC Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.3µA Input offset current: 40nA |
на замовлення 1233 шт: термін постачання 21-30 дні (днів) |
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LD39200DPUR | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.5÷5.75V; 2A; DFN8 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 0.5...5.75V Output current: 2A Case: DFN8 Mounting: SMD Manufacturer series: LD39200 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.25...6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LD39200PU33R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2% Manufacturer series: LD39200 Case: DFN8 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 2A Voltage drop: 0.25V Output voltage: 3.3V Number of channels: 1 Input voltage: 1.25...6V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM258QT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; DFN8; 7mV Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...30V DC Case: DFN8 Operating temperature: -40...105°C Slew rate: 0.6V/μs Integrated circuit features: low power Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA |
на замовлення 1658 шт: термін постачання 21-30 дні (днів) |
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LM2904Q2T | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; DFN8; 3÷30VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: SMT Number of channels: 2 Case: DFN8 Slew rate: 0.6V/μs Operating temperature: -40...125°C Input offset voltage: 9mV Voltage supply range: 3...30V DC Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM193QT | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Case: DFN8 Operating temperature: -55...125°C Input offset voltage: 9mV Kind of package: reel; tape Kind of output: open collector Input offset current: 150nA Input bias current: 0.4µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2903Q2T | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 500ns; 2÷36V; SMT; DFN8 2x2 Input offset current: 150nA Input bias current: 0.4µA Delay time: 500ns Input offset voltage: 15mV Number of comparators: 2 Operating voltage: 2...36V Kind of output: open collector Type of integrated circuit: comparator Case: DFN8 2x2 Kind of comparator: low-power Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C |
на замовлення 2880 шт: термін постачання 21-30 дні (днів) |
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LM393QT | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape; 150nA Kind of comparator: low-power Kind of output: open collector Kind of package: reel; tape Operating temperature: 0...70°C Input offset current: 150nA Input offset voltage: 9mV Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Type of integrated circuit: comparator Case: DFN8 |
на замовлення 1695 шт: термін постачання 21-30 дні (днів) |
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STM32H745I-DISCO | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4 Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB Programmers and development kits features: integrated programmer/debugger Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG Type of development kit: STM32 Components: LCD display; STLINK-V3E; STM32H745XIH6 Kind of architecture: Cortex M7 Application: for devices with displays Number of add-on connectors: 4 Kit contents: base board; TFT display |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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STM32H750B-DK | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4 Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB Programmers and development kits features: integrated programmer/debugger Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG Type of development kit: STM32 Components: LCD display; STLINK-V3E; STM32H750XBH6 Kind of architecture: Cortex M7 Application: for devices with displays Number of add-on connectors: 4 Kit contents: base board; TFT display |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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L293B | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; push-pull; motor controller; DIP16; 1A; Ch: 4; 4.5÷36V Type of integrated circuit: driver Case: DIP16 Output current: 1A Number of channels: 4 Supply voltage: 4.5...36V Mounting: THT Application: universal Kind of integrated circuit: motor controller Topology: push-pull Kind of package: tube |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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STTH12R06G | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: D2PAK Max. forward voltage: 1.4V Reverse recovery time: 25ns |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
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STGP7NC60HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 14A; 80W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 48nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 282 шт: термін постачання 21-30 дні (днів) |
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STTH60W03CW | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns Semiconductor structure: common cathode; double Max. off-state voltage: 300V Load current: 30A x2 Case: TO247-3 Max. forward voltage: 0.94V Max. forward impulse current: 280A Reverse recovery time: 25ns Features of semiconductor devices: ultrafast switching Type of diode: rectifying Mounting: THT Kind of package: tube |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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STM32F072RBT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SPI x2; UART x4; USB Kind of architecture: Cortex M0 Memory: 16kB SRAM; 128kB FLASH Number of 16bit timers: 8 Number of 32bit timers: 1 Family: STM32F0 Kind of core: 32-bit Operating temperature: -40...85°C |
на замовлення 551 шт: термін постачання 21-30 дні (днів) |
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STP3NK90ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.89A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 203 шт: термін постачання 21-30 дні (днів) |
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STN3NF06L | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 3.3W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 3703 шт: термін постачання 21-30 дні (днів) |
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STPS0520Z | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.32V Max. load current: 2A Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 6144 шт: термін постачання 21-30 дні (днів) |
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STPS20H100CG | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.59V Max. load current: 30A Max. forward impulse current: 250A Kind of package: tube |
на замовлення 1212 шт: термін постачання 21-30 дні (днів) |
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STW8NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 140W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW4N150 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247 Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 2.5A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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STE48NM50 | STMicroelectronics |
Category: Transistor modules MOSFETDescription: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W Polarisation: unipolar On-state resistance: 80mΩ Drain current: 30A Gate-source voltage: ±30V Pulsed drain current: 192A Drain-source voltage: 500V Power dissipation: 450W Kind of package: tube Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Mechanical mounting: screw Electrical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STN4NF20L | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 1A Power dissipation: 3.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: STripFET™ II |
на замовлення 533 шт: термін постачання 21-30 дні (днів) |
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STP40NF20 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ Drain-source voltage: 200V Drain current: 25A On-state resistance: 45mΩ Gate-source voltage: ±20V |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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STW45NM60 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STB42N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: SuperMesh™ Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP40NF10L | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: TO220-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ Drain-source voltage: 100V Drain current: 25A On-state resistance: 36mΩ Gate-source voltage: ±17V |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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STP42N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ V Version: ESD |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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STW45N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 210W Case: TO247 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW48NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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SMBJ48A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 8.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 296 шт: термін постачання 21-30 дні (днів) |
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ST1S40IPHR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 4...18V DC Case: HSOP8 Mounting: SMD Topology: buck Number of channels: 1 Frequency: 850kHz Output voltage: 0.8...18V DC Output current: 3A |
на замовлення 724 шт: термін постачання 21-30 дні (днів) |
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STD4NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.89A Power dissipation: 80W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: SuperMesh™ Version: ESD |
на замовлення 2286 шт: термін постачання 21-30 дні (днів) |
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| STP14N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.4A Pulsed drain current: 48A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 445mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STP45N60DM6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 95A Power dissipation: 210W Case: TO220-3 On-state resistance: 99mΩ Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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STGW40V60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 80A; 283W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 80A Power dissipation: 283W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 226nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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STPS0540Z | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.4V Max. load current: 2A Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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STPS1L40A | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 60A Kind of package: reel; tape Max. load current: 8A |
на замовлення 11658 шт: термін постачання 21-30 дні (днів) |
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STPS40150CG | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube Case: D2PAK Mounting: SMD Type of diode: Schottky rectifying Max. forward voltage: 0.92V Load current: 20A x2 Max. load current: 40A Max. off-state voltage: 150V Max. forward impulse current: 250A Kind of package: tube Semiconductor structure: common cathode; double |
на замовлення 73 шт: термін постачання 21-30 дні (днів) |
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STPS40150CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V Case: TO220AB Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.69V Load current: 20A x2 Max. off-state voltage: 150V Max. forward impulse current: 250A Kind of package: tube Semiconductor structure: common cathode; double |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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SMAJ24CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 46A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1768 шт: термін постачання 21-30 дні (днів) |
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STP45N60DM2AG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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STPS1545CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.5V Load current: 7.5A x2 Max. load current: 20A Max. off-state voltage: 45V Max. forward impulse current: 150A Case: TO220AB Semiconductor structure: common cathode; double |
на замовлення 127 шт: термін постачання 21-30 дні (днів) |
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STPS1545FP | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 0.57V Load current: 15A Max. load current: 30A Max. off-state voltage: 45V Max. forward impulse current: 200A Case: TO220FP-2 Semiconductor structure: single diode |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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STPS24045TV | STMicroelectronics |
Category: Diode modulesDescription: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw Electrical mounting: screw Type of semiconductor module: diode Semiconductor structure: double independent Mechanical mounting: screw Case: ISOTOP Features of semiconductor devices: Schottky Max. forward voltage: 0.68V Max. off-state voltage: 45V Load current: 120A x2 Max. load current: 240A Max. forward impulse current: 1.15kA |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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STPS41H100CG | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; tube Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. load current: 40A Max. forward impulse current: 220A Kind of package: tube |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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STW45N60DM2AG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 85mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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| STGIPS14K60 | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; SLLIMM™; SDIP-25L; 14A; Ch: 6 Mounting: THT Frequency: 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge Case: SDIP-25L Technology: SLLIMM™ Operating temperature: -40...125°C Number of channels: 6 Operating voltage: 13.5...18/0...400V DC Output current: 14A Power dissipation: 42W Collector-emitter voltage: 600V Kind of integrated circuit: 3-phase motor controller; IPM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STM32F417VGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 168MHz; LQFP100; 1.8÷3.6VDC Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB Kind of architecture: Cortex M4 Type of integrated circuit: STM32 ARM microcontroller Family: STM32F4 Operating temperature: -40...85°C Supply voltage: 1.8...3.6V DC Memory: 192kB SRAM; 1MB FLASH Kind of core: 32-bit Clock frequency: 168MHz Case: LQFP100 Mounting: SMD |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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STM32G473VBT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 86 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB FLASH; 128kB SRAM Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Kind of core: 32-bit Number of comparators: 7 Number of 16bit timers: 11 Number of 32bit timers: 2 |
товару немає в наявності |
В кошику од. на суму грн. |
| NUCLEO-L053R8 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L053R8T6
Kind of architecture: Cortex M0+
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Kit contents: base board
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Number of add-on connectors: 2
Type of development kit: STM32
Components: STM32L053R8T6
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L053R8T6
Kind of architecture: Cortex M0+
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Kit contents: base board
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Number of add-on connectors: 2
Type of development kit: STM32
Components: STM32L053R8T6
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1446.07 грн |
| NUCLEO-L073RZ |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L073RZT6
Kind of architecture: Cortex M0+
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Kit contents: base board
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Number of add-on connectors: 2
Type of development kit: STM32
Components: STM32L073RZT6
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L073RZT6
Kind of architecture: Cortex M0+
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Kit contents: base board
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Number of add-on connectors: 2
Type of development kit: STM32
Components: STM32L073RZT6
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1294.58 грн |
| NUCLEO-L152RE |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L152RET6
Kind of architecture: Cortex M3
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Kit contents: base board
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Number of add-on connectors: 2
Type of development kit: STM32
Components: STM32L152RET6
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L152RET6
Kind of architecture: Cortex M3
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Kit contents: base board
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Number of add-on connectors: 2
Type of development kit: STM32
Components: STM32L152RET6
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1384.10 грн |
| NUCLEO-L452RE |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L452RET6
Kind of architecture: Cortex M4
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Kit contents: base board
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Number of add-on connectors: 2
Type of development kit: STM32
Components: STM32L452RET6
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L452RET6
Kind of architecture: Cortex M4
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Kit contents: base board
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Number of add-on connectors: 2
Type of development kit: STM32
Components: STM32L452RET6
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1510.63 грн |
| NUCLEO-L476RG |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L476RGT6
Kind of architecture: Cortex M4
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Kit contents: base board
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Number of add-on connectors: 2
Type of development kit: STM32
Components: STM32L476RGT6
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L476RGT6
Kind of architecture: Cortex M4
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Kit contents: base board
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Number of add-on connectors: 2
Type of development kit: STM32
Components: STM32L476RGT6
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1291.13 грн |
| L6388ED |
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Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO8; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO8
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: tube
Supply voltage: 17V
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO8; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO8
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: tube
Supply voltage: 17V
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.63 грн |
| 25+ | 123.89 грн |
| L6388ED013TR |
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Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO8; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO8
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: reel; tape
Supply voltage: 17V
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO8; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO8
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: reel; tape
Supply voltage: 17V
на замовлення 2300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.91 грн |
| 7+ | 62.34 грн |
| LM2902WYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; SO14; 3÷30VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; SO14; 3÷30VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| LM2902WYPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; TSSOP14; 3÷30VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; TSSOP14; 3÷30VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| LM2902YDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; SO14; 3÷30VDC; reel
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; SO14; 3÷30VDC; reel
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel
на замовлення 2082 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 23+ | 17.58 грн |
| 25+ | 15.99 грн |
| 100+ | 14.07 грн |
| 250+ | 13.11 грн |
| 500+ | 12.55 грн |
| 1000+ | 11.99 грн |
| LM2902YPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; TSSOP14; 3÷30VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 0.4V/μs
Quiescent current: 375µA
Operating temperature: -40...125°C
Input offset voltage: 9mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; TSSOP14; 3÷30VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 0.4V/μs
Quiescent current: 375µA
Operating temperature: -40...125°C
Input offset voltage: 9mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
на замовлення 1233 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.48 грн |
| 12+ | 35.65 грн |
| 13+ | 32.13 грн |
| 25+ | 27.97 грн |
| 100+ | 23.10 грн |
| 250+ | 20.62 грн |
| 500+ | 19.18 грн |
| 1000+ | 18.06 грн |
| LD39200DPUR |
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Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷5.75V; 2A; DFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 0.5...5.75V
Output current: 2A
Case: DFN8
Mounting: SMD
Manufacturer series: LD39200
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.25...6V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷5.75V; 2A; DFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 0.5...5.75V
Output current: 2A
Case: DFN8
Mounting: SMD
Manufacturer series: LD39200
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.25...6V
товару немає в наявності
В кошику
од. на суму грн.
| LD39200PU33R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2%
Manufacturer series: LD39200
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 2A
Voltage drop: 0.25V
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.25...6V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2%
Manufacturer series: LD39200
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 2A
Voltage drop: 0.25V
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.25...6V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
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| LM258QT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; DFN8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: DFN8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; DFN8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: DFN8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
на замовлення 1658 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.38 грн |
| 24+ | 17.26 грн |
| 26+ | 15.75 грн |
| 29+ | 14.07 грн |
| 100+ | 12.07 грн |
| 250+ | 11.19 грн |
| 500+ | 10.71 грн |
| 1000+ | 10.39 грн |
| LM2904Q2T |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DFN8; 3÷30VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: DFN8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DFN8; 3÷30VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: DFN8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
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| LM193QT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: DFN8
Operating temperature: -55...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Input bias current: 0.4µA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: DFN8
Operating temperature: -55...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Input bias current: 0.4µA
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| LM2903Q2T |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 500ns; 2÷36V; SMT; DFN8 2x2
Input offset current: 150nA
Input bias current: 0.4µA
Delay time: 500ns
Input offset voltage: 15mV
Number of comparators: 2
Operating voltage: 2...36V
Kind of output: open collector
Type of integrated circuit: comparator
Case: DFN8 2x2
Kind of comparator: low-power
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 500ns; 2÷36V; SMT; DFN8 2x2
Input offset current: 150nA
Input bias current: 0.4µA
Delay time: 500ns
Input offset voltage: 15mV
Number of comparators: 2
Operating voltage: 2...36V
Kind of output: open collector
Type of integrated circuit: comparator
Case: DFN8 2x2
Kind of comparator: low-power
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
на замовлення 2880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.96 грн |
| 21+ | 19.18 грн |
| 24+ | 17.18 грн |
| 27+ | 14.95 грн |
| 100+ | 12.47 грн |
| 250+ | 11.19 грн |
| 500+ | 10.47 грн |
| 1000+ | 9.99 грн |
| LM393QT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape; 150nA
Kind of comparator: low-power
Kind of output: open collector
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 150nA
Input offset voltage: 9mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: DFN8
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape; 150nA
Kind of comparator: low-power
Kind of output: open collector
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 150nA
Input offset voltage: 9mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: DFN8
на замовлення 1695 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.19 грн |
| 42+ | 9.59 грн |
| 44+ | 9.19 грн |
| 46+ | 8.71 грн |
| 100+ | 8.31 грн |
| 250+ | 8.07 грн |
| STM32H745I-DISCO |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Programmers and development kits features: integrated programmer/debugger
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Type of development kit: STM32
Components: LCD display; STLINK-V3E; STM32H745XIH6
Kind of architecture: Cortex M7
Application: for devices with displays
Number of add-on connectors: 4
Kit contents: base board; TFT display
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Programmers and development kits features: integrated programmer/debugger
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Type of development kit: STM32
Components: LCD display; STLINK-V3E; STM32H745XIH6
Kind of architecture: Cortex M7
Application: for devices with displays
Number of add-on connectors: 4
Kit contents: base board; TFT display
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6424.68 грн |
| STM32H750B-DK |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Programmers and development kits features: integrated programmer/debugger
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Type of development kit: STM32
Components: LCD display; STLINK-V3E; STM32H750XBH6
Kind of architecture: Cortex M7
Application: for devices with displays
Number of add-on connectors: 4
Kit contents: base board; TFT display
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Programmers and development kits features: integrated programmer/debugger
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Type of development kit: STM32
Components: LCD display; STLINK-V3E; STM32H750XBH6
Kind of architecture: Cortex M7
Application: for devices with displays
Number of add-on connectors: 4
Kit contents: base board; TFT display
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9198.04 грн |
| L293B |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; DIP16; 1A; Ch: 4; 4.5÷36V
Type of integrated circuit: driver
Case: DIP16
Output current: 1A
Number of channels: 4
Supply voltage: 4.5...36V
Mounting: THT
Application: universal
Kind of integrated circuit: motor controller
Topology: push-pull
Kind of package: tube
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; DIP16; 1A; Ch: 4; 4.5÷36V
Type of integrated circuit: driver
Case: DIP16
Output current: 1A
Number of channels: 4
Supply voltage: 4.5...36V
Mounting: THT
Application: universal
Kind of integrated circuit: motor controller
Topology: push-pull
Kind of package: tube
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 518.18 грн |
| 10+ | 376.46 грн |
| 25+ | 354.88 грн |
| 50+ | 340.49 грн |
| 100+ | 327.70 грн |
| STTH12R06G |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: D2PAK
Max. forward voltage: 1.4V
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: D2PAK
Max. forward voltage: 1.4V
Reverse recovery time: 25ns
на замовлення 144 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.05 грн |
| 10+ | 54.35 грн |
| 25+ | 51.95 грн |
| 50+ | 50.35 грн |
| STGP7NC60HD | ![]() |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 282 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 129.11 грн |
| 10+ | 84.72 грн |
| 50+ | 56.75 грн |
| STTH60W03CW |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 300V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.94V
Max. forward impulse current: 280A
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 300V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.94V
Max. forward impulse current: 280A
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: THT
Kind of package: tube
на замовлення 148 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 192.81 грн |
| 10+ | 138.27 грн |
| STM32F072RBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Operating temperature: -40...85°C
на замовлення 551 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 344.30 грн |
| 5+ | 274.15 грн |
| 10+ | 249.37 грн |
| 25+ | 233.39 грн |
| 50+ | 231.79 грн |
| STP3NK90ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 203 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.25 грн |
| 9+ | 49.87 грн |
| 10+ | 47.48 грн |
| 50+ | 42.28 грн |
| 100+ | 40.20 грн |
| STN3NF06L |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3703 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.77 грн |
| 10+ | 53.47 грн |
| 55+ | 17.10 грн |
| 151+ | 16.23 грн |
| STPS0520Z |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 6144 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.75 грн |
| 68+ | 5.91 грн |
| 72+ | 5.55 грн |
| 100+ | 4.59 грн |
| 500+ | 3.64 грн |
| 1000+ | 3.25 грн |
| 3000+ | 2.61 грн |
| 6000+ | 2.30 грн |
| STPS20H100CG |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.59V
Max. load current: 30A
Max. forward impulse current: 250A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.59V
Max. load current: 30A
Max. forward impulse current: 250A
Kind of package: tube
на замовлення 1212 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.56 грн |
| 50+ | 55.71 грн |
| 100+ | 52.99 грн |
| 250+ | 46.20 грн |
| 500+ | 46.04 грн |
| STW8NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| STW4N150 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 448.45 грн |
| 5+ | 332.50 грн |
| STE48NM50 |
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Виробник: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W
Polarisation: unipolar
On-state resistance: 80mΩ
Drain current: 30A
Gate-source voltage: ±30V
Pulsed drain current: 192A
Drain-source voltage: 500V
Power dissipation: 450W
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Mechanical mounting: screw
Electrical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W
Polarisation: unipolar
On-state resistance: 80mΩ
Drain current: 30A
Gate-source voltage: ±30V
Pulsed drain current: 192A
Drain-source voltage: 500V
Power dissipation: 450W
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Mechanical mounting: screw
Electrical mounting: screw
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| STN4NF20L |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: STripFET™ II
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: STripFET™ II
на замовлення 533 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.32 грн |
| 16+ | 26.46 грн |
| 100+ | 20.38 грн |
| 200+ | 18.70 грн |
| 250+ | 18.14 грн |
| 500+ | 17.18 грн |
| STP40NF20 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Gate-source voltage: ±20V
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 255.64 грн |
| 10+ | 199.02 грн |
| 25+ | 163.05 грн |
| STW45NM60 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| STB42N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SuperMesh™
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SuperMesh™
Version: ESD
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В кошику
од. на суму грн.
| STP40NF10L |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Gate-source voltage: ±17V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Gate-source voltage: ±17V
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.66 грн |
| 10+ | 90.32 грн |
| 50+ | 71.14 грн |
| STP42N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Version: ESD
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 679.14 грн |
| 5+ | 575.48 грн |
| STW45N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| STW48NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 385.62 грн |
| SMBJ48A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 296 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 22+ | 18.30 грн |
| 26+ | 15.67 грн |
| 50+ | 13.83 грн |
| 100+ | 12.07 грн |
| 250+ | 10.07 грн |
| ST1S40IPHR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 4...18V DC
Case: HSOP8
Mounting: SMD
Topology: buck
Number of channels: 1
Frequency: 850kHz
Output voltage: 0.8...18V DC
Output current: 3A
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 4...18V DC
Case: HSOP8
Mounting: SMD
Topology: buck
Number of channels: 1
Frequency: 850kHz
Output voltage: 0.8...18V DC
Output current: 3A
на замовлення 724 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.51 грн |
| 5+ | 104.70 грн |
| 10+ | 99.11 грн |
| 25+ | 95.91 грн |
| STD4NK80ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SuperMesh™
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SuperMesh™
Version: ESD
на замовлення 2286 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 160.96 грн |
| 10+ | 96.71 грн |
| 20+ | 86.32 грн |
| 100+ | 67.14 грн |
| 200+ | 61.54 грн |
| 500+ | 55.15 грн |
| 1000+ | 50.35 грн |
| 2000+ | 47.16 грн |
| STP14N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| STP45N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 401.11 грн |
| 10+ | 319.71 грн |
| 25+ | 300.53 грн |
| STGW40V60DF |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.83 грн |
| 5+ | 226.19 грн |
| 10+ | 205.41 грн |
| 30+ | 160.65 грн |
| 60+ | 143.07 грн |
| STPS0540Z |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.63 грн |
| 34+ | 11.83 грн |
| 38+ | 10.55 грн |
| 45+ | 8.95 грн |
| STPS1L40A |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 8A
на замовлення 11658 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.52 грн |
| 30+ | 13.35 грн |
| 100+ | 8.48 грн |
| 500+ | 6.27 грн |
| 1000+ | 5.55 грн |
| 2500+ | 4.76 грн |
| 5000+ | 4.26 грн |
| 10000+ | 3.83 грн |
| STPS40150CG |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube
Case: D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.92V
Load current: 20A x2
Max. load current: 40A
Max. off-state voltage: 150V
Max. forward impulse current: 250A
Kind of package: tube
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube
Case: D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.92V
Load current: 20A x2
Max. load current: 40A
Max. off-state voltage: 150V
Max. forward impulse current: 250A
Kind of package: tube
Semiconductor structure: common cathode; double
на замовлення 73 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 141.16 грн |
| 5+ | 119.09 грн |
| STPS40150CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.69V
Load current: 20A x2
Max. off-state voltage: 150V
Max. forward impulse current: 250A
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.69V
Load current: 20A x2
Max. off-state voltage: 150V
Max. forward impulse current: 250A
Kind of package: tube
Semiconductor structure: common cathode; double
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.48 грн |
| 10+ | 95.11 грн |
| 25+ | 84.72 грн |
| SMAJ24CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 46A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 46A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1768 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.52 грн |
| 23+ | 18.14 грн |
| 50+ | 14.63 грн |
| 100+ | 12.87 грн |
| 250+ | 10.63 грн |
| 500+ | 9.19 грн |
| 1000+ | 7.91 грн |
| STP45N60DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 342.58 грн |
| 10+ | 285.34 грн |
| 50+ | 252.57 грн |
| STPS1545CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.5V
Load current: 7.5A x2
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 150A
Case: TO220AB
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.5V
Load current: 7.5A x2
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 150A
Case: TO220AB
Semiconductor structure: common cathode; double
на замовлення 127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.11 грн |
| 10+ | 40.76 грн |
| 13+ | 32.85 грн |
| 25+ | 24.70 грн |
| 50+ | 20.78 грн |
| 100+ | 20.06 грн |
| STPS1545FP |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.57V
Load current: 15A
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 200A
Case: TO220FP-2
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.57V
Load current: 15A
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 200A
Case: TO220FP-2
Semiconductor structure: single diode
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.42 грн |
| 12+ | 34.21 грн |
| 50+ | 30.77 грн |
| 100+ | 29.97 грн |
| STPS24045TV |
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Виробник: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw
Electrical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Case: ISOTOP
Features of semiconductor devices: Schottky
Max. forward voltage: 0.68V
Max. off-state voltage: 45V
Load current: 120A x2
Max. load current: 240A
Max. forward impulse current: 1.15kA
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw
Electrical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Case: ISOTOP
Features of semiconductor devices: Schottky
Max. forward voltage: 0.68V
Max. off-state voltage: 45V
Load current: 120A x2
Max. load current: 240A
Max. forward impulse current: 1.15kA
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1883.33 грн |
| STPS41H100CG |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 40A
Max. forward impulse current: 220A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 40A
Max. forward impulse current: 220A
Kind of package: tube
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.48 грн |
| 10+ | 91.92 грн |
| 50+ | 78.33 грн |
| STW45N60DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 426.93 грн |
| 10+ | 319.71 грн |
| STGIPS14K60 |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; SLLIMM™; SDIP-25L; 14A; Ch: 6
Mounting: THT
Frequency: 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Case: SDIP-25L
Technology: SLLIMM™
Operating temperature: -40...125°C
Number of channels: 6
Operating voltage: 13.5...18/0...400V DC
Output current: 14A
Power dissipation: 42W
Collector-emitter voltage: 600V
Kind of integrated circuit: 3-phase motor controller; IPM
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; SLLIMM™; SDIP-25L; 14A; Ch: 6
Mounting: THT
Frequency: 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Case: SDIP-25L
Technology: SLLIMM™
Operating temperature: -40...125°C
Number of channels: 6
Operating voltage: 13.5...18/0...400V DC
Output current: 14A
Power dissipation: 42W
Collector-emitter voltage: 600V
Kind of integrated circuit: 3-phase motor controller; IPM
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В кошику
од. на суму грн.
| STM32F417VGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 168MHz; LQFP100; 1.8÷3.6VDC
Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F4
Operating temperature: -40...85°C
Supply voltage: 1.8...3.6V DC
Memory: 192kB SRAM; 1MB FLASH
Kind of core: 32-bit
Clock frequency: 168MHz
Case: LQFP100
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 168MHz; LQFP100; 1.8÷3.6VDC
Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F4
Operating temperature: -40...85°C
Supply voltage: 1.8...3.6V DC
Memory: 192kB SRAM; 1MB FLASH
Kind of core: 32-bit
Clock frequency: 168MHz
Case: LQFP100
Mounting: SMD
на замовлення 83 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1115.54 грн |
| 3+ | 999.89 грн |
| 10+ | 971.12 грн |
| 25+ | 913.57 грн |
| STM32G473VBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB FLASH; 128kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Kind of core: 32-bit
Number of comparators: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB FLASH; 128kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Kind of core: 32-bit
Number of comparators: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
товару немає в наявності
В кошику
од. на суму грн.




































