Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162431) > Сторінка 2708 з 2708
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VIPER27LD | STMicroelectronics |
 Category: Voltage regulators - PWM circuitsDescription: IC: driver Type of integrated circuit: driver |
на замовлення 1750 шт: термін постачання 21-30 дні (днів) |
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STP3N150 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3 Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 1.6A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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STW3N150 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247 Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 1.6A Power dissipation: 140W Case: TO247 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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STFW3N150 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 1.6A Power dissipation: 63W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
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STH3N150-2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 7A; 86W; DPAK Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 200V Drain current: 7A Power dissipation: 86W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TYN1012TRG | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Case: TO220AB Kind of package: tube Gate current: 5mA Max. load current: 12A Max. forward impulse current: 140A Type of thyristor: thyristor |
на замовлення 181 шт: термін постачання 21-30 дні (днів) |
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STTH812G-TR | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK Kind of package: reel; tape Max. forward voltage: 1.25V Max. forward impulse current: 80A |
на замовлення 423 шт: термін постачання 21-30 дні (днів) |
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STTH812FP | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220FPAC Kind of package: tube Max. forward voltage: 1.25V Max. forward impulse current: 80A |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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STTH8S12D | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 32ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Kind of package: tube Heatsink thickness: 1.23...1.32mm Max. forward voltage: 1.75V Max. forward impulse current: 70A |
на замовлення 308 шт: термін постачання 21-30 дні (днів) |
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STTH812DI | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220ACIns Kind of package: tube Heatsink thickness: 1.23...1.32mm Max. forward voltage: 1.25V Max. forward impulse current: 80A |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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| STGW8M120DF3 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3 Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Kind of package: tube Gate charge: 32nC Collector current: 8A Gate-emitter voltage: ±20V Pulsed collector current: 32A Power dissipation: 167W Collector-emitter voltage: 1.2kV Type of transistor: IGBT |
товару немає в наявності |
В кошику од. на суму грн. |
| VIPER27LD |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 93.82 грн |
| STP3N150 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 87 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 321.14 грн |
| 10+ | 246.27 грн |
| STW3N150 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 340.09 грн |
| 5+ | 242.92 грн |
| 10+ | 230.35 грн |
| STFW3N150 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 63W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 63W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 260.70 грн |
| 5+ | 224.49 грн |
| STH3N150-2 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 7A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 86W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 7A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 86W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| TYN1012TRG |
|
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AB
Kind of package: tube
Gate current: 5mA
Max. load current: 12A
Max. forward impulse current: 140A
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AB
Kind of package: tube
Gate current: 5mA
Max. load current: 12A
Max. forward impulse current: 140A
Type of thyristor: thyristor
на замовлення 181 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 130.80 грн |
| 10+ | 72.54 грн |
| 25+ | 63.91 грн |
| 50+ | 58.38 грн |
| 100+ | 53.19 грн |
| STTH812G-TR |
|
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Kind of package: reel; tape
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Kind of package: reel; tape
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
на замовлення 423 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 87.50 грн |
| 10+ | 50.09 грн |
| 100+ | 39.87 грн |
| 250+ | 35.94 грн |
| STTH812FP |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.85 грн |
| STTH8S12D |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.75V
Max. forward impulse current: 70A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.75V
Max. forward impulse current: 70A
на замовлення 308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 74.87 грн |
| 12+ | 36.69 грн |
| STTH812DI |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.52 грн |
| 10+ | 76.23 грн |
| 50+ | 70.36 грн |
| STGW8M120DF3 |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Power dissipation: 167W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Power dissipation: 167W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
товару немає в наявності
В кошику
од. на суму грн.