Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162382) > Сторінка 2706 з 2707
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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VND5T100AJTR-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 22A; PowerSSO12; 8÷36V; reel,tape Case: PowerSSO12 Mounting: SMD Kind of integrated circuit: high-side Type of integrated circuit: power switch Operating temperature: -40...150°C On-state resistance: 0.2Ω Number of channels: 2 Output current: 22A Supply voltage: 8...36V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| VND5T100LAJTR-E | STMicroelectronics |
Category: Integrated circuits - UnclassifiedDescription: VND5T100LAJTR-E |
на замовлення 92500 шт: термін постачання 21-30 дні (днів) |
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BD678A | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STM32L452VET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 83 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 160kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of 12bit D/A converters: 1 Family: STM32L4 Kind of core: 32-bit Number of comparators: 2 |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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DA108S1RL | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 12A; 0.73W; bidirectional; SO8; Ch: 4; ESD Semiconductor structure: bidirectional Version: ESD Mounting: SMD Type of diode: TVS array Leakage current: 2µA Peak pulse power dissipation: 0.73W Number of channels: 4 Max. forward impulse current: 12A Max. off-state voltage: 18V Case: SO8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| VIPER53SPTR-E | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1 Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: PWM controller Case: PowerSO10 Output current: 2A Output voltage: 620V Number of channels: 1 Mounting: SMD Operating temperature: -40...150°C Application: SMPS Operating voltage: 7.5...19V DC Frequency: 93...300kHz Kind of package: reel; tape Supply voltage: 10.2...19V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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VIPER53EDIP-E | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; flyback; PWM controller; DIP8; 2A; 620V; Ch: 1; 7.5÷19VDC Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: PWM controller Case: DIP8 Output current: 2A Output voltage: 620V Number of channels: 1 Mounting: THT Operating temperature: -40...150°C Application: SMPS Operating voltage: 7.5...19V DC Frequency: 93...300kHz Kind of package: tube Supply voltage: 10.2...19V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| VIPER53ESP-E | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1 Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: PWM controller Case: PowerSO10 Output current: 2A Output voltage: 620V Number of channels: 1 Mounting: SMD Operating temperature: -40...150°C Application: SMPS Operating voltage: 7.5...19V DC Frequency: 93...300kHz Kind of package: tube Supply voltage: 10.2...19V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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T1210-800G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 12A; D2PAK; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 10mA Mounting: SMD Kind of package: reel; tape |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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| ST1510FX | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 1.5kV; 12A; 62W; TO3PF Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 1.5kV Collector current: 12A Power dissipation: 62W Case: TO3PF Mounting: THT Kind of package: tube |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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LDK320AM36R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 3.6V Output current: 0.2A Case: SOT23-5 Mounting: SMD Manufacturer series: LDK320 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±0.5% Number of channels: 1 Input voltage: 2.5...18V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJD32CT4 | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Mounting: SMD Kind of package: reel; tape |
на замовлення 2155 шт: термін постачання 21-30 дні (днів) |
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| MJD32CT4-A | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ACS108-8TN-TR | STMicroelectronics |
Category: TriacsDescription: ACS108-8TN-TR |
на замовлення 65000 шт: термін постачання 21-30 дні (днів) |
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| STW65N023M9-4 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STWA65N023M9 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 58A; Idm: 440A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 58A Pulsed drain current: 440A Power dissipation: 463W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M9 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LD56100DPU30R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,fixed; 3V; 1A; DFN8; SMD; LD56100; 1÷2% Kind of voltage regulator: fixed; LDO Kind of package: reel; tape Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Tolerance: 1...2% Voltage drop: 0.165V Output current: 1A Input voltage: 1.8...5.5V Number of channels: 2 Output voltage: 3V Manufacturer series: LD56100 Case: DFN8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LD56100DPU33R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,fixed; 3.3V; 1A; DFN8; SMD; LD56100; 1÷2% Kind of voltage regulator: fixed; LDO Kind of package: reel; tape Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Tolerance: 1...2% Voltage drop: 0.155V Output current: 1A Input voltage: 1.8...5.5V Number of channels: 2 Output voltage: 3.3V Manufacturer series: LD56100 Case: DFN8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VNN3NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 3.5A; Ch: 1; SMD; SOT223 Type of integrated circuit: power switch Mounting: SMD On-state resistance: 0.12Ω Number of channels: 1 Output current: 3.5A Case: SOT223 Output voltage: 36V Kind of integrated circuit: low-side |
на замовлення 869 шт: термін постачання 21-30 дні (днів) |
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| VND3NV04TR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 3.5A; Ch: 1; SMD; DPAK; tube Type of integrated circuit: power switch Kind of package: tube Mounting: SMD On-state resistance: 0.12Ω Number of channels: 1 Output current: 3.5A Case: DPAK Output voltage: 40V Kind of integrated circuit: low-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| VNS3NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
на замовлення 7500 шт: термін постачання 21-30 дні (днів) |
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| STD40NF10 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 50A; 125W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 125W Case: DPAK; TO252 On-state resistance: 28mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 62nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STD40NF10 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 100V; 50A; 125W; DPAK Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 50A Power dissipation: 125W Case: DPAK Gate-source voltage: 20V On-state resistance: 28mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 62nC |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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SMCJ33CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 38.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 2461 шт: термін постачання 21-30 дні (днів) |
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SMCJ30CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 35.1V; 32A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 35.1V Max. forward impulse current: 32A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
на замовлення 1066 шт: термін постачання 21-30 дні (днів) |
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SMCJ26A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 30.4V Max. forward impulse current: 37A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 475 шт: термін постачання 21-30 дні (днів) |
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SMCJ40CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 46.7V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 1036 шт: термін постачання 21-30 дні (днів) |
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SMCJ28A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 32.7V Max. forward impulse current: 34A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 790 шт: термін постачання 21-30 дні (днів) |
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| STL120N10F8 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 125A Pulsed drain current: 500A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| VL53L3CXV0DH/1 | STMicroelectronics |
Category: UnclassifiedDescription: VL53L3CXV0DH/1 |
на замовлення 4500 шт: термін постачання 21-30 дні (днів) |
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| VIPER113XSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 30kHz; SSOP10; boost,buck,buck-boost,flyback; Ubr: 800V Type of integrated circuit: PMIC Mounting: SMD Case: SSOP10 Input voltage: 4.5...30V Supply voltage: 4.5...30V Frequency: 30kHz Breakdown voltage: 800V Topology: boost; buck; buck-boost; flyback |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| STM32H7A3RGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 280MHz; LQFP64; 1.62÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 280MHz Mounting: SMD Number of inputs/outputs: 49 Case: LQFP64 Supply voltage: 1.62...3.6V DC Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog Memory: 1MB FLASH; 1.4MB SRAM Operating temperature: -40...85°C Number of comparators: 1 Family: STM32H7 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LE33CZ | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,fixed; 3.3V; 150mA; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO Voltage drop: 0.2V Output voltage: 3.3V Output current: 0.15A Case: TO92 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LE33CZ-TR | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.2V Output voltage: 3.3V Output current: 0.1A Case: TO92 Mounting: THT Manufacturer series: LEXX Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...18V |
на замовлення 1602 шт: термін постачання 21-30 дні (днів) |
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| STF20N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 30W Case: TO220FP On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STF3LN80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2A Pulsed drain current: 8A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.25Ω Mounting: THT Gate charge: 2.63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| STGWT60H65FB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STGWT60H65DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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| STGW60H65DRF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 420W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 420W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 217nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STGWA60H65DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STD30NF06LAG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| STW75N60DM6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 32mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJD44H11T4 | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of package: reel; tape Pulsed collector current: 16A |
на замовлення 1400 шт: термін постачання 21-30 дні (днів) |
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| MJD44H11T4-A | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of package: reel; tape Pulsed collector current: 16A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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D44H11 | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 50MHz |
на замовлення 351 шт: термін постачання 21-30 дні (днів) |
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| MJB44H11T4-A | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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D45H11 | STMicroelectronics |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; TO220AB Mounting: THT Collector current: 10A Kind of package: tube Type of transistor: PNP Case: TO220AB Collector-emitter voltage: 80V Polarisation: bipolar |
на замовлення 378 шт: термін постачання 21-30 дні (днів) |
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MJD45H11T4 | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Mounting: SMD Collector current: 8A Kind of package: reel; tape Current gain: 40 Type of transistor: PNP Case: DPAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 20W |
на замовлення 914 шт: термін постачання 21-30 дні (днів) |
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STP4NK80ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.89A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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STD1NK60T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Technology: SuperMesh™ Drain current: 1A Power dissipation: 30W On-state resistance: 8.5Ω Gate-source voltage: ±30V Kind of package: reel; tape Drain-source voltage: 600V Case: DPAK Kind of channel: enhancement |
на замовлення 466 шт: термін постачання 21-30 дні (днів) |
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STD1NK60-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Technology: SuperMesh™ Drain current: 0.63A Power dissipation: 30W On-state resistance: 8.5Ω Gate-source voltage: ±30V Kind of package: tube Drain-source voltage: 600V Case: I2PAK Kind of channel: enhancement Version: ESD |
на замовлення 267 шт: термін постачання 21-30 дні (днів) |
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| STS1NK60Z | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STL30N10F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Pulsed drain current: 120A Power dissipation: 4.8W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TSC215ICT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Kind of integrated circuit: current sense Case: SC70-6 Number of channels: single; 1 Integrated circuit features: zero-drift Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset current: 20nA Input bias current: 35µA Slew rate: 0.42V/μs Voltage supply range: 2.7...26V DC Bandwidth: 60kHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TSC215IYCT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Kind of integrated circuit: current sense Case: SC70-6 Number of channels: single; 1 Mounting: SMT Operating temperature: -40...125°C Input offset current: 20nA Input bias current: 35µA Quiescent current: 115µA Input offset voltage: 4.5mV Slew rate: 0.42V/μs Voltage supply range: 2.7...26V DC Bandwidth: 60kHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TYN612RG | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 15mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 12A Load current: 8A Gate current: 15mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 140A |
на замовлення 232 шт: термін постачання 21-30 дні (днів) |
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TYN612MRG | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 12A Load current: 8A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 110A |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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TYN612MFP | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 12A Load current: 8A Gate current: 5mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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| TYN612TRG | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 12A Load current: 8A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 140A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| L4984DTR | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; PFC controller; SSOP10; 10.3÷22.5V Type of integrated circuit: driver Kind of integrated circuit: PFC controller Case: SSOP10 Mounting: SMD Operating temperature: -40...150°C Application: SMPS Kind of package: reel; tape Supply voltage: 10.3...22.5V |
товару немає в наявності |
В кошику од. на суму грн. |
| VND5T100AJTR-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 22A; PowerSSO12; 8÷36V; reel,tape
Case: PowerSSO12
Mounting: SMD
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Operating temperature: -40...150°C
On-state resistance: 0.2Ω
Number of channels: 2
Output current: 22A
Supply voltage: 8...36V
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 22A; PowerSSO12; 8÷36V; reel,tape
Case: PowerSSO12
Mounting: SMD
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Operating temperature: -40...150°C
On-state resistance: 0.2Ω
Number of channels: 2
Output current: 22A
Supply voltage: 8...36V
Kind of package: reel; tape
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В кошику
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| VND5T100LAJTR-E |
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Виробник: STMicroelectronics
Category: Integrated circuits - Unclassified
Description: VND5T100LAJTR-E
Category: Integrated circuits - Unclassified
Description: VND5T100LAJTR-E
на замовлення 92500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 152.45 грн |
| BD678A |
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Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
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| STM32L452VET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 2
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 487.12 грн |
| 3+ | 433.06 грн |
| 10+ | 396.21 грн |
| 25+ | 365.21 грн |
| DA108S1RL |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 12A; 0.73W; bidirectional; SO8; Ch: 4; ESD
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 2µA
Peak pulse power dissipation: 0.73W
Number of channels: 4
Max. forward impulse current: 12A
Max. off-state voltage: 18V
Case: SO8
Category: Protection diodes - arrays
Description: Diode: TVS array; 12A; 0.73W; bidirectional; SO8; Ch: 4; ESD
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 2µA
Peak pulse power dissipation: 0.73W
Number of channels: 4
Max. forward impulse current: 12A
Max. off-state voltage: 18V
Case: SO8
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| VIPER53SPTR-E |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: reel; tape
Supply voltage: 10.2...19V
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: reel; tape
Supply voltage: 10.2...19V
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| VIPER53EDIP-E |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; DIP8; 2A; 620V; Ch: 1; 7.5÷19VDC
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: THT
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; DIP8; 2A; 620V; Ch: 1; 7.5÷19VDC
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: THT
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
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| VIPER53ESP-E |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
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| T1210-800G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 132.61 грн |
| 10+ | 78.40 грн |
| ST1510FX |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1.5kV; 12A; 62W; TO3PF
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1.5kV
Collector current: 12A
Power dissipation: 62W
Case: TO3PF
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1.5kV; 12A; 62W; TO3PF
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1.5kV
Collector current: 12A
Power dissipation: 62W
Case: TO3PF
Mounting: THT
Kind of package: tube
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 224.62 грн |
| 10+ | 173.39 грн |
| 30+ | 159.15 грн |
| LDK320AM36R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.6V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK320
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Number of channels: 1
Input voltage: 2.5...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.6V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK320
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Number of channels: 1
Input voltage: 2.5...18V
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| MJD32CT4 |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 2155 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 64.05 грн |
| 11+ | 40.63 грн |
| 100+ | 24.88 грн |
| 250+ | 20.77 грн |
| 500+ | 18.34 грн |
| 1000+ | 16.33 грн |
| MJD32CT4-A |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| ACS108-8TN-TR |
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на замовлення 65000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.52 грн |
| STW65N023M9-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
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| STWA65N023M9 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 58A; Idm: 440A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58A
Pulsed drain current: 440A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M9
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 58A; Idm: 440A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58A
Pulsed drain current: 440A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M9
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| LD56100DPU30R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.165V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3V
Manufacturer series: LD56100
Case: DFN8
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.165V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3V
Manufacturer series: LD56100
Case: DFN8
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| LD56100DPU33R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.155V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3.3V
Manufacturer series: LD56100
Case: DFN8
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.155V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3.3V
Manufacturer series: LD56100
Case: DFN8
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| VNN3NV04PTR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; SOT223
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: SOT223
Output voltage: 36V
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; SOT223
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: SOT223
Output voltage: 36V
Kind of integrated circuit: low-side
на замовлення 869 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 128.10 грн |
| 10+ | 77.90 грн |
| 25+ | 69.52 грн |
| 50+ | 62.82 грн |
| VND3NV04TR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; DPAK; tube
Type of integrated circuit: power switch
Kind of package: tube
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: DPAK
Output voltage: 40V
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; DPAK; tube
Type of integrated circuit: power switch
Kind of package: tube
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: DPAK
Output voltage: 40V
Kind of integrated circuit: low-side
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| VNS3NV04PTR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 54.12 грн |
| STD40NF10 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 125W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 125W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
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| STD40NF10 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 50A; 125W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 50A; 125W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 38.88 грн |
| SMCJ33CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 2461 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.52 грн |
| 12+ | 36.02 грн |
| 50+ | 27.39 грн |
| 100+ | 24.46 грн |
| 250+ | 21.44 грн |
| 500+ | 19.60 грн |
| 1000+ | 18.18 грн |
| SMCJ30CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 35.1V; 32A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 35.1V; 32A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
на замовлення 1066 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.06 грн |
| 19+ | 22.28 грн |
| 20+ | 20.94 грн |
| 50+ | 18.26 грн |
| 100+ | 17.34 грн |
| 500+ | 16.00 грн |
| SMCJ26A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.40 грн |
| 13+ | 34.26 грн |
| 20+ | 31.50 грн |
| 100+ | 24.71 грн |
| 200+ | 22.28 грн |
| SMCJ40CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 1036 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.89 грн |
| 14+ | 31.24 грн |
| 20+ | 29.32 грн |
| 40+ | 27.39 грн |
| 50+ | 26.72 грн |
| 100+ | 24.71 грн |
| 500+ | 20.19 грн |
| 1000+ | 18.34 грн |
| SMCJ28A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.7V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.7V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.57 грн |
| 16+ | 26.80 грн |
| 17+ | 25.30 грн |
| 50+ | 21.61 грн |
| 100+ | 20.19 грн |
| 250+ | 18.26 грн |
| 500+ | 16.84 грн |
| STL120N10F8 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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| VL53L3CXV0DH/1 |
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на замовлення 4500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 210.19 грн |
| VIPER113XSTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 30kHz; SSOP10; boost,buck,buck-boost,flyback; Ubr: 800V
Type of integrated circuit: PMIC
Mounting: SMD
Case: SSOP10
Input voltage: 4.5...30V
Supply voltage: 4.5...30V
Frequency: 30kHz
Breakdown voltage: 800V
Topology: boost; buck; buck-boost; flyback
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 30kHz; SSOP10; boost,buck,buck-boost,flyback; Ubr: 800V
Type of integrated circuit: PMIC
Mounting: SMD
Case: SSOP10
Input voltage: 4.5...30V
Supply voltage: 4.5...30V
Frequency: 30kHz
Breakdown voltage: 800V
Topology: boost; buck; buck-boost; flyback
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 62.24 грн |
| STM32H7A3RGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 280MHz; LQFP64; 1.62÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 280MHz
Mounting: SMD
Number of inputs/outputs: 49
Case: LQFP64
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 1MB FLASH; 1.4MB SRAM
Operating temperature: -40...85°C
Number of comparators: 1
Family: STM32H7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 280MHz; LQFP64; 1.62÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 280MHz
Mounting: SMD
Number of inputs/outputs: 49
Case: LQFP64
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 1MB FLASH; 1.4MB SRAM
Operating temperature: -40...85°C
Number of comparators: 1
Family: STM32H7
Kind of core: 32-bit
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| LE33CZ | ![]() |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 150mA; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.15A
Case: TO92
Mounting: THT
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 150mA; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.15A
Case: TO92
Mounting: THT
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| LE33CZ-TR |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LEXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LEXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...18V
на замовлення 1602 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.50 грн |
| 16+ | 27.47 грн |
| 25+ | 25.46 грн |
| 100+ | 23.04 грн |
| 250+ | 21.95 грн |
| 500+ | 21.28 грн |
| STF20N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
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| STF3LN80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.25Ω
Mounting: THT
Gate charge: 2.63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.25Ω
Mounting: THT
Gate charge: 2.63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 99.23 грн |
| 10+ | 58.64 грн |
| 25+ | 54.45 грн |
| STGWT60H65FB |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
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| STGWT60H65DFB |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 68 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 314.83 грн |
| 3+ | 276.42 грн |
| 5+ | 263.02 грн |
| 10+ | 251.29 грн |
| STGW60H65DRF |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
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| STGWA60H65DFB |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| STD30NF06LAG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 26.61 грн |
| STW75N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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| MJD44H11T4 |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
на замовлення 1400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.46 грн |
| 10+ | 46.66 грн |
| 50+ | 32.25 грн |
| 100+ | 27.64 грн |
| 500+ | 20.94 грн |
| MJD44H11T4-A |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
Application: automotive industry
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| D44H11 |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
на замовлення 351 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 89.31 грн |
| 10+ | 51.77 грн |
| 25+ | 45.07 грн |
| 50+ | 40.88 грн |
| 100+ | 37.19 грн |
| 200+ | 35.94 грн |
| MJB44H11T4-A |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| D45H11 |
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Виробник: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
на замовлення 378 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 107.35 грн |
| 10+ | 58.47 грн |
| 50+ | 46.82 грн |
| 100+ | 42.72 грн |
| 250+ | 37.86 грн |
| MJD45H11T4 |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 40
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 40
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
на замовлення 914 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 71.26 грн |
| 10+ | 43.14 грн |
| 100+ | 30.41 грн |
| 500+ | 24.12 грн |
| STP4NK80ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.68 грн |
| 5+ | 97.17 грн |
| 10+ | 87.12 грн |
| 25+ | 72.04 грн |
| 50+ | 60.31 грн |
| STD1NK60T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Technology: SuperMesh™
Drain current: 1A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: reel; tape
Drain-source voltage: 600V
Case: DPAK
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Technology: SuperMesh™
Drain current: 1A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: reel; tape
Drain-source voltage: 600V
Case: DPAK
Kind of channel: enhancement
на замовлення 466 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.19 грн |
| 10+ | 56.21 грн |
| 50+ | 44.23 грн |
| 100+ | 39.87 грн |
| STD1NK60-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: SuperMesh™
Drain current: 0.63A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: tube
Drain-source voltage: 600V
Case: I2PAK
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: SuperMesh™
Drain current: 0.63A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: tube
Drain-source voltage: 600V
Case: I2PAK
Kind of channel: enhancement
Version: ESD
на замовлення 267 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.71 грн |
| 15+ | 29.90 грн |
| 75+ | 24.29 грн |
| STS1NK60Z |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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| STL30N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 4.8W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 4.8W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
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| TSC215ICT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Integrated circuit features: zero-drift
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 20nA
Input bias current: 35µA
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Integrated circuit features: zero-drift
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 20nA
Input bias current: 35µA
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
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| TSC215IYCT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 20nA
Input bias current: 35µA
Quiescent current: 115µA
Input offset voltage: 4.5mV
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 20nA
Input bias current: 35µA
Quiescent current: 115µA
Input offset voltage: 4.5mV
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
Application: automotive industry
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од. на суму грн.
| TYN612RG |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
на замовлення 232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.91 грн |
| 50+ | 39.12 грн |
| 100+ | 36.61 грн |
| TYN612MRG |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 85.70 грн |
| 11+ | 41.80 грн |
| 25+ | 36.61 грн |
| 50+ | 33.34 грн |
| TYN612MFP |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
на замовлення 235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.72 грн |
| 10+ | 53.61 грн |
| 25+ | 46.15 грн |
| 50+ | 41.46 грн |
| 100+ | 37.36 грн |
| TYN612TRG |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
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| L4984DTR |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SSOP10; 10.3÷22.5V
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 10.3...22.5V
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SSOP10; 10.3÷22.5V
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 10.3...22.5V
товару немає в наявності
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од. на суму грн.



















