Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162382) > Сторінка 2704 з 2707
| Фото | Назва | Виробник | Інформація |
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STM32G081CBT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 44 Case: LQFP48 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Memory: 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 17 Number of 8bit timers: 3 Number of 32bit timers: 1 |
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| STM32G081CBT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 44 Case: LQFP48 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4 Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 17 Kind of package: reel; tape Number of 32bit timers: 1 |
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| STM32G081CBU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 44 Case: UFQFPN48 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Memory: 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 17 Number of 8bit timers: 3 Number of 32bit timers: 1 |
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| STM32G081EBY6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; WLCSP25; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 23 Case: WLCSP25 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4 Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 12 Kind of package: reel; tape Number of 32bit timers: 1 |
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| STM32G081GBU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 26 Case: UFQFPN28 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Memory: 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 12 Number of 8bit timers: 3 Number of 32bit timers: 1 |
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| STM32G081KBT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP32; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 30 Case: LQFP32 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Memory: 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 13 Number of 8bit timers: 3 Number of 32bit timers: 1 |
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| STM32G0B1RET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; Cmp: 3 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 60 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: CAN-FD; GPIO; HDMI CEC; I2C; I2S; IrDA; LIN; SPI; SWD; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM; watchdog Memory: 144kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 32bit timers: 1 Family: STM32G0 Kind of core: 32-bit Number of comparators: 3 |
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| STM32G0B1RET6N | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 58 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 12bit D/A converters: 2 Number of 16bit timers: 12 Number of 32bit timers: 1 Family: STM32G0 Kind of package: in-tray Kind of core: 32-bit |
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| STH240N10F7-2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: D2PAK; TO263AB On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 160nC Kind of channel: enhancement |
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LD3985M28R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.8V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: LD3985 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2.5...6V |
товару немає в наявності |
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| BZW50-27RL | STMicroelectronics |
Category: Diodes - UnclassifiedDescription: BZW50-27RL |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| STM32G070RBT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 59 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: I2C x2; SPI x2; USART x4 Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 16bit timers: 8 Family: STM32G0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STL20N6F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 12A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 78W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: STripFET™ F7 |
на замовлення 2164 шт: термін постачання 21-30 дні (днів) |
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| STL260N4F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2993 шт: термін постачання 21-30 дні (днів) |
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| STL260N4LF7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhancement |
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| STL22N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 710V; 15A; Idm: 60A; 110W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 15A Pulsed drain current: 60A Power dissipation: 110W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
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| STL210N4LF7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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| STL21N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 68A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
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| STL220N4F8 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL225N6F7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| STL26N60DM6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 110W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 110W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.215Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| STL26N65DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 53A; 140W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 53A Power dissipation: 140W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 206mΩ Mounting: SMD Gate charge: 35.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL285N4F7AG | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL2N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 33W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TL064CD | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; 6÷36VDC; SO14; tube Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 4 Mounting: SMT Voltage supply range: 6...36V DC Case: SO14 Operating temperature: 0...70°C Slew rate: 3.5V/μs Integrated circuit features: low power Kind of package: tube |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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STW9NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 186 шт: термін постачання 21-30 дні (днів) |
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| STW26N65DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12.6A; Idm: 53A; 170W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.6A Power dissipation: 170W Case: TO247 Gate-source voltage: ±25V On-state resistance: 156mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 35.5nC Pulsed drain current: 53A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STB6N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD6N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 60W Case: DPAK; TO252 On-state resistance: 1.1Ω Mounting: SMD Gate charge: 6.2nC Kind of channel: enhancement |
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SM6T24CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 18A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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L6470PD | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; motor controller; PowerSO36; 3A; 8÷45V Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: PowerSO36 Output current: 3A Mounting: SMD On-state resistance: 510mΩ Operating temperature: -40...150°C Application: universal Kind of package: tube Supply voltage: 8...45V |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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STM32F765IGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 140 Case: LQFP176 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 512kB SRAM; 1MB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Family: STM32F7 Kind of core: 32-bit Number of 32bit timers: 2 Number of 16bit timers: 12 |
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В кошику од. на суму грн. | ||||||||||||||||||
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STM32F765VGT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP100; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 82 Case: LQFP100 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 512kB SRAM; 1MB FLASH Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Family: STM32F7 Kind of core: 32-bit Number of 32bit timers: 2 Number of 16bit timers: 12 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM32F769BGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 168 Case: LQFP208 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 512kB SRAM; 1MB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Family: STM32F7 Kind of core: 32-bit Number of 32bit timers: 2 Number of 16bit timers: 12 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STP4N150 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3 Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 2.5A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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| VN9D5D20FNTR | STMicroelectronics |
Category: Integrated circuits - Unclassified Description: VN9D5D20FNTR |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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STM32F439BGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG Kind of architecture: Cortex M4 Type of integrated circuit: STM32 ARM microcontroller Family: STM32F4 Supply voltage: 1.8...3.6V DC Number of inputs/outputs: 168 Memory: 256kB SRAM; 1MB FLASH Kind of core: 32-bit Clock frequency: 180MHz Case: LQFP208 Mounting: SMD |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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| STM32F427ZIT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of architecture: Cortex M4 Type of integrated circuit: STM32 ARM microcontroller Family: STM32F4 Operating temperature: -40...105°C Number of 12bit D/A converters: 2 Supply voltage: 1.8...3.6V DC Number of 16bit timers: 14 Number of 12bit A/D converters: 24 Number of inputs/outputs: 114 Memory: 256kB SRAM; 2MB FLASH Kind of core: 32-bit Clock frequency: 180MHz Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: in-tray Case: LQFP144 Mounting: SMD |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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STTH6010W | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 400A; DO247; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 0.4kA Case: DO247 Max. forward voltage: 1.3V Reverse recovery time: 49ns |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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| LD39030ADTPU18R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.33V Output voltage: 1.8V Output current: 0.3A Case: DFN4 Mounting: SMD Manufacturer series: LD39030 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 0.5...1.5% Number of channels: 1 Input voltage: 1.5...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BUL38D | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 5A Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.23...1.32mm |
на замовлення 149 шт: термін постачання 21-30 дні (днів) |
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SMAJ85CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 85V Breakdown voltage: 99V Max. forward impulse current: 13A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 1910 шт: термін постачання 21-30 дні (днів) |
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SMAJ154A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 154V Breakdown voltage: 171V Max. forward impulse current: 7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 4500 шт: термін постачання 21-30 дні (днів) |
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SMAJ33A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 36.7V; 33A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 7002 шт: термін постачання 21-30 дні (днів) |
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SMAJ10CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 11.1V; 106A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 106A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Kind of package: reel; tape |
на замовлення 2129 шт: термін постачання 21-30 дні (днів) |
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SMAJ70CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 81.9V; 16A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 70V Breakdown voltage: 81.9V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 3615 шт: термін постачання 21-30 дні (днів) |
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SMAJ70A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 81.9V; 16A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 70V Breakdown voltage: 81.9V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 5682 шт: термін постачання 21-30 дні (днів) |
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| EVAL-L9963E-MCU | STMicroelectronics |
Category: Development kits - UnclassifiedDescription: EVAL-L9963E-MCU |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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| A1C15S12M3 | STMicroelectronics |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 142.8W Max. off-state voltage: 1.2kV Case: ACEPACK™1 Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Application: Inverter; motors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G0B0CET6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 43 Case: LQFP48 Supply voltage: 2...3.6V DC Interface: I2C x3; SPI x3; USART x6; USB Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 16bit timers: 9 Family: STM32G0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G0B0RET6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 59 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: I2C x3; SPI x3; USART x6; USB Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 16bit timers: 9 Family: STM32G0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SM6T33CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2336 шт: термін постачання 21-30 дні (днів) |
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SM6T33CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 22411 шт: термін постачання 21-30 дні (днів) |
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SCTW90N65G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 90A Pulsed drain current: 220A Power dissipation: 565W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 30mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCTH90N65G2V-7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 116A; Idm: 220A; 484W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 116A Pulsed drain current: 220A Power dissipation: 484W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 27mΩ Mounting: SMD Gate charge: 157nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTL90N65G2V | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 935W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 160A Power dissipation: 935W Case: PowerFLAT 8x8 Gate-source voltage: -10...22V On-state resistance: 24mΩ Mounting: SMD Gate charge: 157nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTWA90N65G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 119A Pulsed drain current: 220A Power dissipation: 565W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 24mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTWA90N65G2V-4 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 119A Pulsed drain current: 220A Power dissipation: 565W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 24mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STB12NM50T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 550V; 12A; 160W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 550V Drain current: 12A Power dissipation: 160W Case: D2PAK; TO263 On-state resistance: 0.35Ω Mounting: SMD Kind of channel: enhancement Gate charge: 28nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
STP46NF30 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 300V; 27A; Idm: 168A Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Case: TO220-3 Technology: STripFET™ II Gate charge: 90nC On-state resistance: 75mΩ Power dissipation: 300W Gate-source voltage: ±20V Drain current: 27A Pulsed drain current: 168A Drain-source voltage: 300V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 248 шт: термін постачання 21-30 дні (днів) |
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| STM32G081CBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: LQFP48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Number of 8bit timers: 3
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: LQFP48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Number of 8bit timers: 3
Number of 32bit timers: 1
товару немає в наявності
В кошику
од. на суму грн.
| STM32G081CBT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: LQFP48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Kind of package: reel; tape
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: LQFP48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Kind of package: reel; tape
Number of 32bit timers: 1
товару немає в наявності
В кошику
од. на суму грн.
| STM32G081CBU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Number of 8bit timers: 3
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Number of 8bit timers: 3
Number of 32bit timers: 1
товару немає в наявності
В кошику
од. на суму грн.
| STM32G081EBY6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; WLCSP25; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 23
Case: WLCSP25
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 12
Kind of package: reel; tape
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; WLCSP25; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 23
Case: WLCSP25
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 12
Kind of package: reel; tape
Number of 32bit timers: 1
товару немає в наявності
В кошику
од. на суму грн.
| STM32G081GBU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN28
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 12
Number of 8bit timers: 3
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN28
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 12
Number of 8bit timers: 3
Number of 32bit timers: 1
товару немає в наявності
В кошику
од. на суму грн.
| STM32G081KBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP32; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 30
Case: LQFP32
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 13
Number of 8bit timers: 3
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP32; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 30
Case: LQFP32
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 13
Number of 8bit timers: 3
Number of 32bit timers: 1
товару немає в наявності
В кошику
од. на суму грн.
| STM32G0B1RET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; Cmp: 3
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD; GPIO; HDMI CEC; I2C; I2S; IrDA; LIN; SPI; SWD; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM; watchdog
Memory: 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 32bit timers: 1
Family: STM32G0
Kind of core: 32-bit
Number of comparators: 3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; Cmp: 3
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD; GPIO; HDMI CEC; I2C; I2S; IrDA; LIN; SPI; SWD; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM; watchdog
Memory: 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 32bit timers: 1
Family: STM32G0
Kind of core: 32-bit
Number of comparators: 3
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| STM32G0B1RET6N |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 58
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 1
Family: STM32G0
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 58
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 1
Family: STM32G0
Kind of package: in-tray
Kind of core: 32-bit
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| STH240N10F7-2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: D2PAK; TO263AB
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: D2PAK; TO263AB
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
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| LD3985M28R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
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| BZW50-27RL |
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на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 71.26 грн |
| STM32G070RBT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 59
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x2; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 8
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 59
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x2; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 8
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
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| STL20N6F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 12A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 78W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: STripFET™ F7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 12A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 78W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: STripFET™ F7
на замовлення 2164 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.91 грн |
| 10+ | 63.58 грн |
| 50+ | 48.67 грн |
| 100+ | 44.81 грн |
| STL260N4F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2993 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.89 грн |
| 10+ | 119.78 грн |
| 100+ | 92.98 грн |
| 250+ | 85.44 грн |
| 500+ | 80.41 грн |
| 1000+ | 77.90 грн |
| STL260N4LF7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL22N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 15A; Idm: 60A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 110W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 15A; Idm: 60A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 110W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL210N4LF7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| STL21N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL220N4F8 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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| STL225N6F7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| STL26N60DM6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 110W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 110W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL26N65DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 53A; 140W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 53A
Power dissipation: 140W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 206mΩ
Mounting: SMD
Gate charge: 35.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 53A; 140W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 53A
Power dissipation: 140W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 206mΩ
Mounting: SMD
Gate charge: 35.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL285N4F7AG |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL2N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 33W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 33W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| TL064CD |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 6÷36VDC; SO14; tube
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 6...36V DC
Case: SO14
Operating temperature: 0...70°C
Slew rate: 3.5V/μs
Integrated circuit features: low power
Kind of package: tube
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 6÷36VDC; SO14; tube
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 6...36V DC
Case: SO14
Operating temperature: 0...70°C
Slew rate: 3.5V/μs
Integrated circuit features: low power
Kind of package: tube
на замовлення 132 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.06 грн |
| 21+ | 20.27 грн |
| 23+ | 18.85 грн |
| 25+ | 17.00 грн |
| 50+ | 16.08 грн |
| 100+ | 15.33 грн |
| STW9NK90Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 186 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 208.38 грн |
| 30+ | 133.19 грн |
| STW26N65DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.6A; Idm: 53A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 156mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35.5nC
Pulsed drain current: 53A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.6A; Idm: 53A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 156mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35.5nC
Pulsed drain current: 53A
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| STB6N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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| STD6N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
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| SM6T24CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
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| L6470PD |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; motor controller; PowerSO36; 3A; 8÷45V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: PowerSO36
Output current: 3A
Mounting: SMD
On-state resistance: 510mΩ
Operating temperature: -40...150°C
Application: universal
Kind of package: tube
Supply voltage: 8...45V
Category: Motor and PWM drivers
Description: IC: driver; motor controller; PowerSO36; 3A; 8÷45V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: PowerSO36
Output current: 3A
Mounting: SMD
On-state resistance: 510mΩ
Operating temperature: -40...150°C
Application: universal
Kind of package: tube
Supply voltage: 8...45V
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1453.26 грн |
| 10+ | 1070.52 грн |
| 31+ | 1032.82 грн |
| 62+ | 987.59 грн |
| STM32F765IGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
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| STM32F765VGT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 82
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 82
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
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| STM32F769BGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
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| STP4N150 | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 664.84 грн |
| 3+ | 570.44 грн |
| 10+ | 478.30 грн |
| 50+ | 433.06 грн |
| VN9D5D20FNTR |
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 221.91 грн |
| STM32F439BGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC
Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F4
Supply voltage: 1.8...3.6V DC
Number of inputs/outputs: 168
Memory: 256kB SRAM; 1MB FLASH
Kind of core: 32-bit
Clock frequency: 180MHz
Case: LQFP208
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC
Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F4
Supply voltage: 1.8...3.6V DC
Number of inputs/outputs: 168
Memory: 256kB SRAM; 1MB FLASH
Kind of core: 32-bit
Clock frequency: 180MHz
Case: LQFP208
Mounting: SMD
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1120.39 грн |
| 3+ | 942.35 грн |
| 10+ | 814.19 грн |
| STM32F427ZIT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F4
Operating temperature: -40...105°C
Number of 12bit D/A converters: 2
Supply voltage: 1.8...3.6V DC
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Number of inputs/outputs: 114
Memory: 256kB SRAM; 2MB FLASH
Kind of core: 32-bit
Clock frequency: 180MHz
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: in-tray
Case: LQFP144
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F4
Operating temperature: -40...105°C
Number of 12bit D/A converters: 2
Supply voltage: 1.8...3.6V DC
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Number of inputs/outputs: 114
Memory: 256kB SRAM; 2MB FLASH
Kind of core: 32-bit
Clock frequency: 180MHz
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: in-tray
Case: LQFP144
Mounting: SMD
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1006.72 грн |
| 3+ | 897.12 грн |
| 10+ | 859.43 грн |
| 25+ | 806.66 грн |
| STTH6010W |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 400A; DO247; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: DO247
Max. forward voltage: 1.3V
Reverse recovery time: 49ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 400A; DO247; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: DO247
Max. forward voltage: 1.3V
Reverse recovery time: 49ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 276.42 грн |
| 4+ | 251.29 грн |
| LD39030ADTPU18R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.33V
Output voltage: 1.8V
Output current: 0.3A
Case: DFN4
Mounting: SMD
Manufacturer series: LD39030
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 0.5...1.5%
Number of channels: 1
Input voltage: 1.5...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.33V
Output voltage: 1.8V
Output current: 0.3A
Case: DFN4
Mounting: SMD
Manufacturer series: LD39030
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 0.5...1.5%
Number of channels: 1
Input voltage: 1.5...5.5V
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| BUL38D |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
на замовлення 149 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.37 грн |
| 10+ | 67.60 грн |
| 50+ | 51.93 грн |
| 100+ | 46.82 грн |
| SMAJ85CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 1910 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.26 грн |
| 24+ | 18.18 грн |
| 100+ | 12.73 грн |
| 250+ | 11.14 грн |
| 500+ | 10.14 грн |
| 1000+ | 9.30 грн |
| SMAJ154A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 4500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.18 грн |
| 16+ | 27.64 грн |
| 17+ | 24.79 грн |
| 100+ | 16.42 грн |
| 250+ | 13.99 грн |
| 500+ | 12.56 грн |
| 1000+ | 11.39 грн |
| SMAJ33A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7V; 33A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7V; 33A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 7002 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.16 грн |
| 25+ | 17.09 грн |
| 50+ | 12.56 грн |
| 100+ | 11.14 грн |
| 250+ | 9.47 грн |
| 500+ | 8.38 грн |
| 1000+ | 7.54 грн |
| 3000+ | 6.45 грн |
| 5000+ | 6.03 грн |
| SMAJ10CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.1V; 106A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 106A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.1V; 106A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 106A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
на замовлення 2129 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.45 грн |
| 24+ | 17.76 грн |
| 28+ | 15.41 грн |
| 50+ | 10.72 грн |
| 100+ | 9.30 грн |
| 250+ | 7.87 грн |
| 500+ | 7.20 грн |
| 1000+ | 6.62 грн |
| SMAJ70CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 81.9V; 16A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 81.9V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 81.9V; 16A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 81.9V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 3615 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.41 грн |
| 87+ | 4.84 грн |
| 100+ | 4.62 грн |
| 500+ | 4.41 грн |
| 1000+ | 4.20 грн |
| 2000+ | 3.97 грн |
| SMAJ70A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 81.9V; 16A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 81.9V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 81.9V; 16A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 81.9V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 5682 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.75 грн |
| 28+ | 15.41 грн |
| 32+ | 13.32 грн |
| 100+ | 9.13 грн |
| 5000+ | 7.79 грн |
| EVAL-L9963E-MCU |
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на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 28235.21 грн |
| A1C15S12M3 |
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Виробник: STMicroelectronics
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 142.8W
Max. off-state voltage: 1.2kV
Case: ACEPACK™1
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: Inverter; motors
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 142.8W
Max. off-state voltage: 1.2kV
Case: ACEPACK™1
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: Inverter; motors
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| STM32G0B0CET6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 43
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 43
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
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| STM32G0B0RET6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 59
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 59
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
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| SM6T33CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2336 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.67 грн |
| 19+ | 23.12 грн |
| 21+ | 20.61 грн |
| 50+ | 15.58 грн |
| 100+ | 13.74 грн |
| 250+ | 11.56 грн |
| 500+ | 9.97 грн |
| 1000+ | 8.63 грн |
| SM6T33CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 22411 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.94 грн |
| 43+ | 9.88 грн |
| 100+ | 8.88 грн |
| 250+ | 8.21 грн |
| 500+ | 7.79 грн |
| 1000+ | 7.62 грн |
| SCTW90N65G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
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| SCTH90N65G2V-7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 116A; Idm: 220A; 484W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 116A
Pulsed drain current: 220A
Power dissipation: 484W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 116A; Idm: 220A; 484W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 116A
Pulsed drain current: 220A
Power dissipation: 484W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| SCTL90N65G2V |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 935W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 935W
Case: PowerFLAT 8x8
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 935W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 935W
Case: PowerFLAT 8x8
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SCTWA90N65G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
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| SCTWA90N65G2V-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| STB12NM50T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; 160W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Power dissipation: 160W
Case: D2PAK; TO263
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; 160W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Power dissipation: 160W
Case: D2PAK; TO263
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
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| STP46NF30 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 300V; 27A; Idm: 168A
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Case: TO220-3
Technology: STripFET™ II
Gate charge: 90nC
On-state resistance: 75mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
Drain current: 27A
Pulsed drain current: 168A
Drain-source voltage: 300V
Polarisation: unipolar
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 300V; 27A; Idm: 168A
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Case: TO220-3
Technology: STripFET™ II
Gate charge: 90nC
On-state resistance: 75mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
Drain current: 27A
Pulsed drain current: 168A
Drain-source voltage: 300V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 248 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 268.82 грн |
| 10+ | 146.59 грн |
| 50+ | 126.48 грн |

















