Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170159) > Сторінка 2739 з 2836
Фото | Назва | Виробник | Інформація |
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M24C16-FMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
M24C16-RDW6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
M24C16-RMC6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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M24C16-RMN6P | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M24C16-RMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C Memory organisation: 2kx8bit |
на замовлення 12025 шт: термін постачання 21-30 дні (днів) |
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M24C16-WMN6P | STMicroelectronics |
![]() ![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial Memory organisation: 2kx8bit |
на замовлення 1346 шт: термін постачання 21-30 дні (днів) |
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M24C16-WMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STB13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 993 шт: термін постачання 21-30 дні (днів) |
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STD13N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: SMD Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STD13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1946 шт: термін постачання 21-30 дні (днів) |
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STF13N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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STF13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 265 шт: термін постачання 21-30 дні (днів) |
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STF33N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 80A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 128mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STF33N60M6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 78A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 33.4nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
STP13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1.5KE440A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 440V; 3.5A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 376V Breakdown voltage: 440V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
на замовлення 796 шт: термін постачання 21-30 дні (днів) |
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1.5KE440CA | STMicroelectronics |
![]() Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Case: DO201 Max. off-state voltage: 376V Semiconductor structure: bidirectional Max. forward impulse current: 3.5A Breakdown voltage: 440V Leakage current: 1µA Kind of package: Ammo Pack Peak pulse power dissipation: 1.5kW Mounting: THT |
на замовлення 933 шт: термін постачання 21-30 дні (днів) |
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LM2904AHYPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; TSSOP8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 2 Case: TSSOP8 Slew rate: 0.6V/μs Operating temperature: -40...150°C Input offset voltage: 6mV Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LM2904AYDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape Operating temperature: -40...125°C Case: SO8 Operating voltage: 3...30V Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 1.1MHz Input offset voltage: 4mV Integrated circuit features: low power Kind of package: reel; tape Slew rate: 0.6V/μs Mounting: SMT |
на замовлення 51237 шт: термін постачання 21-30 дні (днів) |
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BTA25-600B | STMicroelectronics |
![]() ![]() Description: Triac; 600V; 25A; RD91; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: RD91 Gate current: 50mA Mounting: THT Kind of package: bulk |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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BTA41-600BRG | STMicroelectronics |
![]() ![]() Description: Triac; 600V; 41A; TOP3; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 41A Case: TOP3 Gate current: 50mA Mounting: THT Kind of package: tube |
на замовлення 2448 шт: термін постачання 21-30 дні (днів) |
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BTA41-700BRG | STMicroelectronics |
![]() ![]() Description: Triac; 700V; 41A; TOP3; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 700V Max. load current: 41A Case: TOP3 Gate current: 50mA Mounting: THT Kind of package: tube |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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1N5822RL | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.475V Max. forward impulse current: 80A Kind of package: reel Max. load current: 10A |
на замовлення 2254 шт: термін постачання 21-30 дні (днів) |
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1.5KE400ARL | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape Type of diode: TVS Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 4A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
на замовлення 950 шт: термін постачання 21-30 дні (днів) |
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LM358D | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube Integrated circuit features: low power Kind of package: tube Slew rate: 0.6V/μs Mounting: SMT Operating temperature: 0...70°C Case: SO8 Operating voltage: 3...30V Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 1.1MHz |
на замовлення 5790 шт: термін постачання 21-30 дні (днів) |
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LM358DT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape Integrated circuit features: low power Kind of package: reel; tape Slew rate: 0.6V/μs Mounting: SMT Operating temperature: 0...70°C Case: SO8 Operating voltage: 3...30V Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 1.1MHz |
на замовлення 143559 шт: термін постачання 21-30 дні (днів) |
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P6KE200A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Tolerance: ±5% |
на замовлення 850 шт: термін постачання 21-30 дні (днів) |
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LM234DT | STMicroelectronics |
![]() Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3% Type of integrated circuit: current source Operating voltage: 1...40V Mounting: SMD Case: SO8 Operating temperature: -25...100°C Kind of package: reel; tape Tolerance: ±3% Output current: 10mA |
на замовлення 1462 шт: термін постачання 21-30 дні (днів) |
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1.5KE400CA | STMicroelectronics |
![]() Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
на замовлення 2304 шт: термін постачання 21-30 дні (днів) |
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1N5819RL | STMicroelectronics |
![]() ![]() Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel Max. load current: 10A |
на замовлення 2209 шт: термін постачання 21-30 дні (днів) |
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USBLC6-2P6 | STMicroelectronics |
![]() ![]() Description: Diode: TVS array; 6V; bidirectional; SOT666; reel,tape; ESD Application: Ethernet; USB Semiconductor structure: bidirectional Breakdown voltage: 6V Leakage current: 10nA Max. off-state voltage: 5V Kind of package: reel; tape Type of diode: TVS array Case: SOT666 Version: ESD Mounting: SMD |
на замовлення 2544 шт: термін постачання 21-30 дні (днів) |
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P6KE15CA | STMicroelectronics |
![]() Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack |
на замовлення 491 шт: термін постачання 21-30 дні (днів) |
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STM3240G-EVAL | STMicroelectronics |
![]() Description: Dev.kit: STM32; TFT display; Comp: STM32F407IGH6 Type of development kit: STM32 Kit contents: TFT display Components: STM32F407IGH6 Interface: CAN 2.0A/B; Ethernet; I2C; I2S; JTAG; Smart Card; USB OTG Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB Kind of architecture: Cortex M4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STM32429I-EVAL1 | STMicroelectronics |
![]() Description: Dev.kit: STM32; TFT display; Comp: STM32F429NIH6 Type of development kit: STM32 Kit contents: TFT display Components: STM32F429NIH6 Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB Kind of architecture: Cortex M4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STM32439I-EVAL2 | STMicroelectronics |
![]() Description: Dev.kit: STM32; TFT display; Comp: STM32F439NIH6 Type of development kit: STM32 Kit contents: TFT display Components: STM32F439NIH6 Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB Kind of architecture: Cortex M4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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T1235-600G | STMicroelectronics |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: tube Technology: Snubberless™ |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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T1235-600G-TR | STMicroelectronics |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 35mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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T1235H-6G | STMicroelectronics |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Features of semiconductor devices: high temperature Mounting: SMD Kind of package: tube |
на замовлення 56 шт: термін постачання 21-30 дні (днів) |
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T1235H-6G-TR | STMicroelectronics |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
на замовлення 849 шт: термін постачання 21-30 дні (днів) |
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T1235H-6T | STMicroelectronics |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube Technology: Snubberless™ |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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ULN2804A | STMicroelectronics |
![]() Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: DIP18 Output current: 0.5A Output voltage: 50V Number of channels: 8 Mounting: THT Operating temperature: -20...85°C Application: 6-15V PMOS/CMOS; for inductive load Input voltage: 30V |
на замовлення 194 шт: термін постачання 21-30 дні (днів) |
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Z0107MA 1AA2 | STMicroelectronics |
![]() Description: Triac; 600V; 1A; TO92; Igt: 5mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5mA Mounting: THT Kind of package: bulk |
на замовлення 568 шт: термін постачання 21-30 дні (днів) |
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Z0107MA 5AL2 | STMicroelectronics |
![]() Description: Triac; 600V; 1A; TO92; Igt: 5mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5mA Mounting: THT Kind of package: tape |
на замовлення 2040 шт: термін постачання 21-30 дні (днів) |
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Z0107MN 5AA4 | STMicroelectronics |
![]() Description: Triac; 600V; 1A; SOT223; Igt: 5mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5mA Mounting: SMD Kind of package: reel; tape |
на замовлення 5648 шт: термін постачання 21-30 дні (днів) |
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Z0107MN 6AA4 | STMicroelectronics |
![]() Description: Triac; 600V; 1A; SOT223; Igt: 5mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5mA Mounting: SMD Kind of package: reel; tape |
на замовлення 2603 шт: термін постачання 21-30 дні (днів) |
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STB45N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Case: D2PAK On-state resistance: 78mΩ Mounting: SMD Kind of channel: enhancement Power dissipation: 210W Gate-source voltage: ±25V Pulsed drain current: 140A Drain current: 22A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STF35N65DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 40W Gate charge: 56.3nC Gate-source voltage: ±25V Pulsed drain current: 90A Drain current: 20A |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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STF45N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 40W Version: ESD Gate-source voltage: ±25V Drain current: 22A |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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STP35N65DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 250W Gate charge: 56.3nC Gate-source voltage: ±25V Pulsed drain current: 90A Drain current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STP45N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 210W Version: ESD Gate-source voltage: ±25V Drain current: 22A |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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UC2842BD1 | STMicroelectronics |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Case: SO8 Mounting: SMD Operating temperature: -25...85°C Frequency: 48...500kHz Supply voltage: 16...36V Kind of package: tube Output current: 1A Operating voltage: 10...36V Topology: boost; flyback Duty cycle factor: 0...96% Number of channels: 1 Power: 0.8W |
на замовлення 499 шт: термін постачання 21-30 дні (днів) |
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UC2842BD1013TR | STMicroelectronics |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Case: SO8 Mounting: SMD Operating temperature: -25...85°C Frequency: 48...500kHz Supply voltage: 16...36V Kind of package: reel; tape Output current: 1A Operating voltage: 10...36V Topology: boost; flyback Duty cycle factor: 0...96% Number of channels: 1 Power: 0.8W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UC2842BN | STMicroelectronics |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; MiniDIP8; 0÷96%; tube Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Case: MiniDIP8 Mounting: THT Operating temperature: -25...85°C Frequency: 48...500kHz Supply voltage: 16...36V Kind of package: tube Output current: 1A Operating voltage: 10...36V Topology: boost; flyback Duty cycle factor: 0...96% Number of channels: 1 Power: 1.25W |
на замовлення 258 шт: термін постачання 21-30 дні (днів) |
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P6KE30A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack |
на замовлення 931 шт: термін постачання 21-30 дні (днів) |
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STP24NF10 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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1.5KE47CARL | STMicroelectronics |
![]() Description: Diode: TVS; 47V; 23.2A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 47V Breakdown voltage: 47V Max. forward impulse current: 23.2A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
на замовлення 230 шт: термін постачання 21-30 дні (днів) |
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BD135 | STMicroelectronics |
![]() Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; SOT32 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1.5A Case: SOT32 Mounting: THT Frequency: 50MHz Kind of package: tube Current gain: 25...250 Power dissipation: 12.5W |
на замовлення 6115 шт: термін постачання 21-30 дні (днів) |
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BD135-16 | STMicroelectronics |
![]() ![]() Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; SOT32 Collector current: 1.5A Case: SOT32 Power dissipation: 12.5W Frequency: 50MHz Collector-emitter voltage: 45V Current gain: 100...250 Type of transistor: NPN Polarisation: bipolar Kind of package: tube Mounting: THT |
на замовлення 695 шт: термін постачання 21-30 дні (днів) |
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LM2901DT | STMicroelectronics |
![]() ![]() Description: IC: comparator; universal; Cmp: 4; 2÷36V; SMT; SO14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 2...36V Mounting: SMT Case: SO14 Kind of package: reel; tape Kind of output: open collector |
на замовлення 4085 шт: термін постачання 21-30 дні (днів) |
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LM2901HYDT | STMicroelectronics |
![]() Description: IC: comparator; precision; Cmp: 4; 2÷36V; SMT; SO14; reel,tape; 150nA Type of integrated circuit: comparator Kind of comparator: precision Number of comparators: 4 Operating voltage: 2...36V Mounting: SMT Case: SO14 Operating temperature: -40...150°C Input offset voltage: 15mV Kind of package: reel; tape Input offset current: 150nA Kind of output: open collector |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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M24C16-FMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
M24C16-RDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
M24C16-RMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
M24C16-RMN6P |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
M24C16-RMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
на замовлення 12025 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.35 грн |
46+ | 8.49 грн |
100+ | 6.96 грн |
160+ | 5.58 грн |
440+ | 5.27 грн |
1000+ | 5.12 грн |
2500+ | 5.05 грн |
M24C16-WMN6P | ![]() |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Memory organisation: 2kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Memory organisation: 2kx8bit
на замовлення 1346 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.47 грн |
73+ | 12.31 грн |
200+ | 11.62 грн |
M24C16-WMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
STB13N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 993 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 188.53 грн |
10+ | 94.03 грн |
27+ | 88.68 грн |
200+ | 85.62 грн |
STD13N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
STD13N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1946 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 137.49 грн |
10+ | 105.50 грн |
12+ | 78.74 грн |
32+ | 74.16 грн |
500+ | 71.86 грн |
STF13N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 193.47 грн |
10+ | 92.50 грн |
12+ | 81.04 грн |
31+ | 76.45 грн |
STF13N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 265 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 156.43 грн |
10+ | 71.86 грн |
14+ | 68.80 грн |
36+ | 64.98 грн |
50+ | 63.45 грн |
100+ | 61.92 грн |
STF33N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 80A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 128mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 80A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 128mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
STF33N60M6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
STP13N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
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1.5KE440A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 440V; 3.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 440V; 3.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
на замовлення 796 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 81.51 грн |
10+ | 66.05 грн |
37+ | 24.69 грн |
100+ | 23.32 грн |
1.5KE440CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Case: DO201
Max. off-state voltage: 376V
Semiconductor structure: bidirectional
Max. forward impulse current: 3.5A
Breakdown voltage: 440V
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Mounting: THT
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Case: DO201
Max. off-state voltage: 376V
Semiconductor structure: bidirectional
Max. forward impulse current: 3.5A
Breakdown voltage: 440V
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Mounting: THT
на замовлення 933 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 90.56 грн |
10+ | 64.75 грн |
30+ | 30.50 грн |
81+ | 28.82 грн |
LM2904AHYPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; TSSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.6V/μs
Operating temperature: -40...150°C
Input offset voltage: 6mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; TSSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.6V/μs
Operating temperature: -40...150°C
Input offset voltage: 6mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
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В кошику
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LM2904AYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Operating temperature: -40...125°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
Input offset voltage: 4mV
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.6V/μs
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Operating temperature: -40...125°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
Input offset voltage: 4mV
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.6V/μs
Mounting: SMT
на замовлення 51237 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.70 грн |
42+ | 9.17 грн |
47+ | 8.26 грн |
50+ | 7.72 грн |
100+ | 7.49 грн |
BTA25-600B | ![]() |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 25A; RD91; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: RD91
Gate current: 50mA
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 25A; RD91; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: RD91
Gate current: 50mA
Mounting: THT
Kind of package: bulk
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 625.70 грн |
2+ | 476.28 грн |
6+ | 450.28 грн |
BTA41-600BRG | ![]() |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
на замовлення 2448 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 235.46 грн |
3+ | 210.23 грн |
5+ | 192.65 грн |
13+ | 181.95 грн |
300+ | 178.13 грн |
BTA41-700BRG | ![]() |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 700V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 624.06 грн |
3+ | 415.12 грн |
6+ | 392.95 грн |
1N5822RL |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.475V
Max. forward impulse current: 80A
Kind of package: reel
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.475V
Max. forward impulse current: 80A
Kind of package: reel
Max. load current: 10A
на замовлення 2254 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.17 грн |
35+ | 11.16 грн |
100+ | 8.56 грн |
163+ | 5.50 грн |
449+ | 5.20 грн |
1900+ | 5.12 грн |
1.5KE400ARL |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
на замовлення 950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.92 грн |
10+ | 61.01 грн |
25+ | 56.65 грн |
31+ | 29.20 грн |
85+ | 27.60 грн |
LM358D |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube
Integrated circuit features: low power
Kind of package: tube
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube
Integrated circuit features: low power
Kind of package: tube
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
на замовлення 5790 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.23 грн |
53+ | 7.26 грн |
100+ | 6.57 грн |
171+ | 5.27 грн |
468+ | 4.97 грн |
2500+ | 4.82 грн |
LM358DT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
на замовлення 143559 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.53 грн |
54+ | 7.19 грн |
64+ | 6.04 грн |
100+ | 5.20 грн |
179+ | 4.97 грн |
250+ | 4.89 грн |
491+ | 4.74 грн |
1000+ | 4.51 грн |
P6KE200A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Tolerance: ±5%
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Tolerance: ±5%
на замовлення 850 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.63 грн |
12+ | 33.64 грн |
25+ | 29.43 грн |
75+ | 12.00 грн |
204+ | 11.39 грн |
LM234DT |
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Виробник: STMicroelectronics
Category: Integrated circuits - others
Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3%
Type of integrated circuit: current source
Operating voltage: 1...40V
Mounting: SMD
Case: SO8
Operating temperature: -25...100°C
Kind of package: reel; tape
Tolerance: ±3%
Output current: 10mA
Category: Integrated circuits - others
Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3%
Type of integrated circuit: current source
Operating voltage: 1...40V
Mounting: SMD
Case: SO8
Operating temperature: -25...100°C
Kind of package: reel; tape
Tolerance: ±3%
Output current: 10mA
на замовлення 1462 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 132.55 грн |
10+ | 93.27 грн |
22+ | 41.28 грн |
60+ | 38.99 грн |
1.5KE400CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
на замовлення 2304 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.98 грн |
10+ | 60.24 грн |
31+ | 29.59 грн |
84+ | 27.98 грн |
1200+ | 26.83 грн |
1N5819RL | ![]() |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel
Max. load current: 10A
на замовлення 2209 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.17 грн |
40+ | 9.56 грн |
46+ | 8.49 грн |
54+ | 7.17 грн |
291+ | 3.07 грн |
799+ | 2.91 грн |
USBLC6-2P6 | ![]() |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT666; reel,tape; ESD
Application: Ethernet; USB
Semiconductor structure: bidirectional
Breakdown voltage: 6V
Leakage current: 10nA
Max. off-state voltage: 5V
Kind of package: reel; tape
Type of diode: TVS array
Case: SOT666
Version: ESD
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT666; reel,tape; ESD
Application: Ethernet; USB
Semiconductor structure: bidirectional
Breakdown voltage: 6V
Leakage current: 10nA
Max. off-state voltage: 5V
Kind of package: reel; tape
Type of diode: TVS array
Case: SOT666
Version: ESD
Mounting: SMD
на замовлення 2544 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.64 грн |
21+ | 18.81 грн |
25+ | 16.51 грн |
50+ | 14.98 грн |
115+ | 7.80 грн |
316+ | 7.34 грн |
P6KE15CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
на замовлення 491 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.16 грн |
14+ | 27.45 грн |
100+ | 9.02 грн |
274+ | 8.56 грн |
STM3240G-EVAL |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F407IGH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F407IGH6
Interface: CAN 2.0A/B; Ethernet; I2C; I2S; JTAG; Smart Card; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F407IGH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F407IGH6
Interface: CAN 2.0A/B; Ethernet; I2C; I2S; JTAG; Smart Card; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
товару немає в наявності
В кошику
од. на суму грн.
STM32429I-EVAL1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F429NIH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F429NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F429NIH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F429NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
товару немає в наявності
В кошику
од. на суму грн.
STM32439I-EVAL2 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F439NIH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F439NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F439NIH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F439NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
товару немає в наявності
В кошику
од. на суму грн.
T1235-600G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Technology: Snubberless™
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 92.21 грн |
T1235-600G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.51 грн |
10+ | 57.64 грн |
T1235H-6G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
на замовлення 56 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.56 грн |
10+ | 63.45 грн |
25+ | 60.39 грн |
T1235H-6G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
на замовлення 849 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 92.21 грн |
10+ | 71.86 грн |
14+ | 64.22 грн |
39+ | 60.39 грн |
100+ | 58.87 грн |
T1235H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Technology: Snubberless™
на замовлення 44 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 158.90 грн |
10+ | 75.68 грн |
13+ | 71.86 грн |
35+ | 68.04 грн |
ULN2804A |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP18
Output current: 0.5A
Output voltage: 50V
Number of channels: 8
Mounting: THT
Operating temperature: -20...85°C
Application: 6-15V PMOS/CMOS; for inductive load
Input voltage: 30V
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP18
Output current: 0.5A
Output voltage: 50V
Number of channels: 8
Mounting: THT
Operating temperature: -20...85°C
Application: 6-15V PMOS/CMOS; for inductive load
Input voltage: 30V
на замовлення 194 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 161.37 грн |
10+ | 106.26 грн |
12+ | 76.45 грн |
33+ | 72.63 грн |
Z0107MA 1AA2 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Mounting: THT
Kind of package: bulk
на замовлення 568 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.29 грн |
31+ | 12.46 грн |
100+ | 8.18 грн |
125+ | 7.95 грн |
178+ | 5.05 грн |
491+ | 4.74 грн |
Z0107MA 5AL2 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Mounting: THT
Kind of package: tape
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Mounting: THT
Kind of package: tape
на замовлення 2040 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.05 грн |
15+ | 25.99 грн |
100+ | 16.74 грн |
137+ | 6.50 грн |
376+ | 6.19 грн |
Z0107MN 5AA4 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5mA
Mounting: SMD
Kind of package: reel; tape
на замовлення 5648 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.64 грн |
20+ | 19.57 грн |
50+ | 13.15 грн |
100+ | 10.93 грн |
109+ | 8.18 грн |
300+ | 7.72 грн |
500+ | 7.49 грн |
Z0107MN 6AA4 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5mA
Mounting: SMD
Kind of package: reel; tape
на замовлення 2603 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
20+ | 19.11 грн |
100+ | 13.68 грн |
101+ | 8.87 грн |
277+ | 8.41 грн |
2000+ | 8.10 грн |
STB45N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Case: D2PAK
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 210W
Gate-source voltage: ±25V
Pulsed drain current: 140A
Drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Case: D2PAK
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 210W
Gate-source voltage: ±25V
Pulsed drain current: 140A
Drain current: 22A
товару немає в наявності
В кошику
од. на суму грн.
STF35N65DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 40W
Gate charge: 56.3nC
Gate-source voltage: ±25V
Pulsed drain current: 90A
Drain current: 20A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 40W
Gate charge: 56.3nC
Gate-source voltage: ±25V
Pulsed drain current: 90A
Drain current: 20A
на замовлення 61 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 476.69 грн |
3+ | 305.03 грн |
9+ | 288.21 грн |
STF45N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 40W
Version: ESD
Gate-source voltage: ±25V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 40W
Version: ESD
Gate-source voltage: ±25V
Drain current: 22A
на замовлення 84 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 493.98 грн |
3+ | 413.59 грн |
6+ | 390.65 грн |
50+ | 375.36 грн |
STP35N65DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Gate charge: 56.3nC
Gate-source voltage: ±25V
Pulsed drain current: 90A
Drain current: 20A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Gate charge: 56.3nC
Gate-source voltage: ±25V
Pulsed drain current: 90A
Drain current: 20A
товару немає в наявності
В кошику
од. на суму грн.
STP45N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±25V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±25V
Drain current: 22A
на замовлення 74 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 539.26 грн |
3+ | 401.36 грн |
7+ | 379.19 грн |
50+ | 378.42 грн |
UC2842BD1 |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Frequency: 48...500kHz
Supply voltage: 16...36V
Kind of package: tube
Output current: 1A
Operating voltage: 10...36V
Topology: boost; flyback
Duty cycle factor: 0...96%
Number of channels: 1
Power: 0.8W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Frequency: 48...500kHz
Supply voltage: 16...36V
Kind of package: tube
Output current: 1A
Operating voltage: 10...36V
Topology: boost; flyback
Duty cycle factor: 0...96%
Number of channels: 1
Power: 0.8W
на замовлення 499 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.04 грн |
12+ | 32.03 грн |
41+ | 22.02 грн |
112+ | 20.87 грн |
UC2842BD1013TR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Frequency: 48...500kHz
Supply voltage: 16...36V
Kind of package: reel; tape
Output current: 1A
Operating voltage: 10...36V
Topology: boost; flyback
Duty cycle factor: 0...96%
Number of channels: 1
Power: 0.8W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Frequency: 48...500kHz
Supply voltage: 16...36V
Kind of package: reel; tape
Output current: 1A
Operating voltage: 10...36V
Topology: boost; flyback
Duty cycle factor: 0...96%
Number of channels: 1
Power: 0.8W
товару немає в наявності
В кошику
од. на суму грн.
UC2842BN |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; MiniDIP8; 0÷96%; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: MiniDIP8
Mounting: THT
Operating temperature: -25...85°C
Frequency: 48...500kHz
Supply voltage: 16...36V
Kind of package: tube
Output current: 1A
Operating voltage: 10...36V
Topology: boost; flyback
Duty cycle factor: 0...96%
Number of channels: 1
Power: 1.25W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; MiniDIP8; 0÷96%; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: MiniDIP8
Mounting: THT
Operating temperature: -25...85°C
Frequency: 48...500kHz
Supply voltage: 16...36V
Kind of package: tube
Output current: 1A
Operating voltage: 10...36V
Topology: boost; flyback
Duty cycle factor: 0...96%
Number of channels: 1
Power: 1.25W
на замовлення 258 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 68.33 грн |
10+ | 44.11 грн |
25+ | 40.06 грн |
34+ | 26.45 грн |
93+ | 25.00 грн |
P6KE30A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
на замовлення 931 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.93 грн |
16+ | 25.08 грн |
25+ | 21.94 грн |
100+ | 8.97 грн |
274+ | 8.48 грн |
STP24NF10 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 121.02 грн |
6+ | 68.80 грн |
10+ | 51.22 грн |
24+ | 38.99 грн |
1.5KE47CARL |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47V; 23.2A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 47V
Breakdown voltage: 47V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47V; 23.2A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 47V
Breakdown voltage: 47V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
на замовлення 230 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.52 грн |
12+ | 31.88 грн |
25+ | 29.59 грн |
55+ | 16.67 грн |
149+ | 15.75 грн |
BD135 |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: SOT32
Mounting: THT
Frequency: 50MHz
Kind of package: tube
Current gain: 25...250
Power dissipation: 12.5W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: SOT32
Mounting: THT
Frequency: 50MHz
Kind of package: tube
Current gain: 25...250
Power dissipation: 12.5W
на замовлення 6115 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.81 грн |
14+ | 28.74 грн |
16+ | 24.77 грн |
50+ | 17.35 грн |
95+ | 9.56 грн |
261+ | 9.02 грн |
BD135-16 | ![]() |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; SOT32
Collector current: 1.5A
Case: SOT32
Power dissipation: 12.5W
Frequency: 50MHz
Collector-emitter voltage: 45V
Current gain: 100...250
Type of transistor: NPN
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; SOT32
Collector current: 1.5A
Case: SOT32
Power dissipation: 12.5W
Frequency: 50MHz
Collector-emitter voltage: 45V
Current gain: 100...250
Type of transistor: NPN
Polarisation: bipolar
Kind of package: tube
Mounting: THT
на замовлення 695 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
12+ | 33.33 грн |
14+ | 28.52 грн |
50+ | 20.26 грн |
100+ | 17.58 грн |
106+ | 8.56 грн |
291+ | 8.10 грн |
LM2901DT | ![]() |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 2...36V
Mounting: SMT
Case: SO14
Kind of package: reel; tape
Kind of output: open collector
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 2...36V
Mounting: SMT
Case: SO14
Kind of package: reel; tape
Kind of output: open collector
на замовлення 4085 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 46.93 грн |
29+ | 13.30 грн |
31+ | 12.38 грн |
100+ | 9.48 грн |
135+ | 6.65 грн |
371+ | 6.27 грн |
2500+ | 6.04 грн |
LM2901HYDT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 4; 2÷36V; SMT; SO14; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 4
Operating voltage: 2...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...150°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input offset current: 150nA
Kind of output: open collector
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 4; 2÷36V; SMT; SO14; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 4
Operating voltage: 2...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...150°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input offset current: 150nA
Kind of output: open collector
на замовлення 38 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 76.57 грн |