Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170096) > Сторінка 2735 з 2835
Фото | Назва | Виробник | Інформація |
Доступність |
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ESDA6V1BC6 | STMicroelectronics |
![]() Description: Diode: TVS array; 6.1V; 3A; 80W; SOT23-6; Ch: 4; reel,tape; ESD Case: SOT23-6 Max. off-state voltage: 5V Semiconductor structure: bidirectional; common cathode; quadruple Max. forward impulse current: 3A Breakdown voltage: 6.1V Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 80W Mounting: SMD |
на замовлення 2797 шт: термін постачання 21-30 дні (днів) |
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ESDA6V1L | STMicroelectronics |
![]() Description: Diode: TVS array; 6.1V; 300W; double,common anode; SOT23; ESD Case: SOT23 Max. off-state voltage: 5.25V Semiconductor structure: common anode; double Breakdown voltage: 6.1V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.3kW Mounting: SMD |
на замовлення 4544 шт: термін постачання 21-30 дні (днів) |
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ESDA6V1SC5 | STMicroelectronics |
![]() Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-5; reel,tape; ESD Case: SOT23-5 Max. off-state voltage: 5.25V Semiconductor structure: common anode Breakdown voltage: 6.1V Leakage current: 2µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.3kW Mounting: SMD |
на замовлення 1598 шт: термін постачання 21-30 дні (днів) |
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ESDA6V1SC6 | STMicroelectronics |
![]() Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-6; reel,tape; ESD Case: SOT23-6 Max. off-state voltage: 5.25V Semiconductor structure: common anode Breakdown voltage: 6.1V Leakage current: 2µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.3kW Mounting: SMD |
на замовлення 5191 шт: термін постачання 21-30 дні (днів) |
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ESDA6V1U1RL | STMicroelectronics |
![]() Description: Diode: TVS array; 6.1V; 200W; common anode; SO8; ESD Case: SO8 Max. off-state voltage: 5V Semiconductor structure: common anode Breakdown voltage: 6.1V Leakage current: 2µA Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.2kW Mounting: SMD |
на замовлення 184 шт: термін постачання 21-30 дні (днів) |
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ESDA6V1W5 | STMicroelectronics |
![]() Description: Diode: TVS array; 6.1V; 150W; quadruple,common anode; SOT323-5L Case: SOT323-5L Max. off-state voltage: 3V Semiconductor structure: common anode; quadruple Breakdown voltage: 6.1V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.15kW Mounting: SMD |
на замовлення 12966 шт: термін постачання 21-30 дні (днів) |
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M24C32-DFDW6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 3943 шт: термін постачання 21-30 дні (днів) |
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M24C32-DFMC6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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M24C32-DFMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 1478 шт: термін постачання 21-30 дні (днів) |
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M24C32-FDW6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
M24C32-FMC6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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M24C32-FMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 2389 шт: термін постачання 21-30 дні (днів) |
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TDA7264 | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 50W; stereo; 5÷22.5VDC; Ch: 2; MULTIWATT8 Mounting: THT Supply voltage: 5...22.5V DC Impedance: 8Ω Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 50W Integrated circuit features: stereo Kind of package: tube Amplifier class: AB Case: MULTIWATT8 |
на замовлення 297 шт: термін постачання 21-30 дні (днів) |
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TDA7265 | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 50W; stereo; 5÷25VDC; Ch: 2; Amp.class: AB Mounting: THT Impedance: 8Ω Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 50W Integrated circuit features: stereo Kind of package: tube Amplifier class: AB Case: MULTIWATT11 Supply voltage: 5...25V DC |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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TDA7265B | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 35W; stereo; 8÷33VDC; Ch: 2; Amp.class: AB Mounting: THT Impedance: 8Ω Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 35W Integrated circuit features: stereo Amplifier class: AB Operating temperature: -20...85°C Case: MULTIWATT11 Supply voltage: 8...33V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TDA7269A | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 28W; stereo; 5÷20VDC; Ch: 2; Amp.class: AB Type of integrated circuit: audio amplifier Output power: 28W Integrated circuit features: stereo Mounting: THT Supply voltage: 5...20V DC Number of channels: 2 Amplifier class: AB Case: MULTIWATT11 Impedance: 8Ω Kind of package: tube |
на замовлення 174 шт: термін постачання 21-30 дні (днів) |
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TDA7293V | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 100W; 12÷50VDC; Ch: 1; Amp.class: AB; 4Ω Type of integrated circuit: audio amplifier Output power: 100W Mounting: THT Supply voltage: 12...50V DC Number of channels: 1 Amplifier class: AB Case: MULTIWATT15 Impedance: 4Ω Kind of package: tube |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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TDA7294V | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 100W; 10÷40VDC; Ch: 1; Amp.class: AB; 4Ω Supply voltage: 10...40V DC Number of channels: 1 Type of integrated circuit: audio amplifier Impedance: 4Ω Amplifier class: AB Case: MULTIWATT15 Kind of package: tube Mounting: THT Output power: 100W |
на замовлення 138 шт: термін постачання 21-30 дні (днів) |
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TDA749213TR | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 50W; 8÷26VDC; Ch: 2; Amp.class: D; 60Ω Type of integrated circuit: audio amplifier Output power: 50W Mounting: SMD Supply voltage: 8...26V DC Number of channels: 2 Amplifier class: D Case: PowerSSO36 Impedance: 60Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TDA7561 | STMicroelectronics |
![]() Description: IC: audio amplifier; 400kHz; Pout: 60W; I2C; stereo; 8÷18VDC; Ch: 4 Type of integrated circuit: audio amplifier Output power: 60W Interface: I2C Mounting: THT Supply voltage: 8...18V DC Number of channels: 4 Amplifier class: AB Case: FLEXIWATT25 Impedance: 2Ω Frequency: 400kHz Integrated circuit features: stereo |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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TDA7564B | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 72W; I2C; 8÷18VDC; Ch: 4; Amp.class: AB Type of integrated circuit: audio amplifier Output power: 72W Interface: I2C Mounting: THT Supply voltage: 8...18V DC Number of channels: 4 Amplifier class: AB Case: FLEXIWATT25 Impedance: 2Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
TDA7575B | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB Type of integrated circuit: audio amplifier Output power: 75W Interface: I2C Mounting: THT Supply voltage: 8...18V DC Number of channels: 2 Amplifier class: AB Case: FLEXIWATT27 Impedance: 2Ω |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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TDA7850 | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 80W; MOSFET,rail-to-rail output; Ch: 4 Case: FLEXIWATT25 Supply voltage: 8...18V DC Impedance: 2Ω Type of integrated circuit: audio amplifier Number of channels: 4 Output power: 80W Integrated circuit features: MOSFET; rail-to-rail output Amplifier class: AB Mounting: THT |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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M24C16-FDW6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
M24C16-FMC5TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -20...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
M24C16-FMC6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -20...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
M24C16-FMH6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN5 Kind of interface: serial Operating temperature: -20...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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M24C16-FMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
M24C16-RDW6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
M24C16-RMC6TG | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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M24C16-RMN6P | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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M24C16-RMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C Memory organisation: 2kx8bit |
на замовлення 13427 шт: термін постачання 21-30 дні (днів) |
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M24C16-WMN6P | STMicroelectronics |
![]() ![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial Memory organisation: 2kx8bit |
на замовлення 1943 шт: термін постачання 21-30 дні (днів) |
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M24C16-WMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STB13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 993 шт: термін постачання 21-30 дні (днів) |
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STD13N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: SMD Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STD13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1945 шт: термін постачання 21-30 дні (днів) |
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STF13N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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STF13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 281 шт: термін постачання 21-30 дні (днів) |
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STF33N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 80A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 128mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STF33N60M6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 78A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 33.4nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
STP13N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5KE440A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 440V; 3.5A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 376V Breakdown voltage: 440V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
на замовлення 796 шт: термін постачання 21-30 дні (днів) |
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1.5KE440CA | STMicroelectronics |
![]() Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 376V Breakdown voltage: 440V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Kind of package: Ammo Pack Leakage current: 1µA |
на замовлення 1069 шт: термін постачання 21-30 дні (днів) |
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LM2904AHYPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; TSSOP8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: SMT Number of channels: 2 Case: TSSOP8 Slew rate: 0.6V/μs Operating temperature: -40...150°C Input offset voltage: 6mV Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA Application: automotive industry Operating voltage: 3...30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LM2904AYDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.6V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Integrated circuit features: low power Kind of package: reel; tape |
на замовлення 51283 шт: термін постачання 21-30 дні (днів) |
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BTA25-600B | STMicroelectronics |
![]() ![]() Description: Triac; 600V; 25A; RD91; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: RD91 Gate current: 50mA Mounting: THT Kind of package: bulk |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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BTA41-600BRG | STMicroelectronics |
![]() ![]() Description: Triac; 600V; 41A; TOP3; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 41A Case: TOP3 Gate current: 50mA Mounting: THT Kind of package: tube |
на замовлення 2564 шт: термін постачання 21-30 дні (днів) |
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BTA41-700BRG | STMicroelectronics |
![]() ![]() Description: Triac; 700V; 41A; TOP3; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 700V Max. load current: 41A Case: TOP3 Gate current: 50mA Mounting: THT Kind of package: tube |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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1N5822RL | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.475V Max. forward impulse current: 80A Kind of package: reel Max. load current: 10A |
на замовлення 728 шт: термін постачання 21-30 дні (днів) |
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1.5KE400ARL | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape Type of diode: TVS Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 4A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
на замовлення 950 шт: термін постачання 21-30 дні (днів) |
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LM358D | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube Integrated circuit features: low power Kind of package: tube Slew rate: 0.6V/μs Mounting: SMT Operating temperature: 0...70°C Case: SO8 Operating voltage: 3...30V Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 1.1MHz |
на замовлення 3726 шт: термін постачання 21-30 дні (днів) |
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LM358DT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape Integrated circuit features: low power Kind of package: reel; tape Slew rate: 0.6V/μs Mounting: SMT Operating temperature: 0...70°C Case: SO8 Operating voltage: 3...30V Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 1.1MHz |
на замовлення 151462 шт: термін постачання 21-30 дні (днів) |
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P6KE200A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Tolerance: ±5% |
на замовлення 885 шт: термін постачання 21-30 дні (днів) |
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LM234DT | STMicroelectronics |
![]() Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3% Type of integrated circuit: current source Operating voltage: 1...40V Mounting: SMD Case: SO8 Operating temperature: -25...100°C Kind of package: reel; tape Tolerance: ±3% Output current: 10mA |
на замовлення 1667 шт: термін постачання 21-30 дні (днів) |
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1.5KE400CA | STMicroelectronics |
![]() Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
на замовлення 2794 шт: термін постачання 21-30 дні (днів) |
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1N5819RL | STMicroelectronics |
![]() ![]() Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel Max. load current: 10A |
на замовлення 3679 шт: термін постачання 21-30 дні (днів) |
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USBLC6-2P6 | STMicroelectronics |
![]() ![]() Description: Diode: TVS array; 6V; bidirectional; SOT666; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: bidirectional Mounting: SMD Case: SOT666 Max. off-state voltage: 5V Leakage current: 10nA Kind of package: reel; tape Application: Ethernet; USB Version: ESD |
на замовлення 2779 шт: термін постачання 21-30 дні (днів) |
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P6KE15CA | STMicroelectronics |
![]() Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack |
на замовлення 871 шт: термін постачання 21-30 дні (днів) |
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STP4NK80Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.89A Power dissipation: 80W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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ESDA6V1BC6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 3A; 80W; SOT23-6; Ch: 4; reel,tape; ESD
Case: SOT23-6
Max. off-state voltage: 5V
Semiconductor structure: bidirectional; common cathode; quadruple
Max. forward impulse current: 3A
Breakdown voltage: 6.1V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 80W
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 3A; 80W; SOT23-6; Ch: 4; reel,tape; ESD
Case: SOT23-6
Max. off-state voltage: 5V
Semiconductor structure: bidirectional; common cathode; quadruple
Max. forward impulse current: 3A
Breakdown voltage: 6.1V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 80W
Mounting: SMD
на замовлення 2797 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.82 грн |
22+ | 17.58 грн |
50+ | 15.06 грн |
100+ | 11.85 грн |
143+ | 6.27 грн |
391+ | 5.96 грн |
ESDA6V1L |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; double,common anode; SOT23; ESD
Case: SOT23
Max. off-state voltage: 5.25V
Semiconductor structure: common anode; double
Breakdown voltage: 6.1V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.3kW
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; double,common anode; SOT23; ESD
Case: SOT23
Max. off-state voltage: 5.25V
Semiconductor structure: common anode; double
Breakdown voltage: 6.1V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.3kW
Mounting: SMD
на замовлення 4544 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.17 грн |
30+ | 13.07 грн |
36+ | 10.70 грн |
100+ | 7.62 грн |
196+ | 4.59 грн |
537+ | 4.34 грн |
ESDA6V1SC5 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-5; reel,tape; ESD
Case: SOT23-5
Max. off-state voltage: 5.25V
Semiconductor structure: common anode
Breakdown voltage: 6.1V
Leakage current: 2µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.3kW
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-5; reel,tape; ESD
Case: SOT23-5
Max. off-state voltage: 5.25V
Semiconductor structure: common anode
Breakdown voltage: 6.1V
Leakage current: 2µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.3kW
Mounting: SMD
на замовлення 1598 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.82 грн |
22+ | 17.89 грн |
50+ | 14.30 грн |
100+ | 12.84 грн |
124+ | 7.26 грн |
339+ | 6.88 грн |
ESDA6V1SC6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-6; reel,tape; ESD
Case: SOT23-6
Max. off-state voltage: 5.25V
Semiconductor structure: common anode
Breakdown voltage: 6.1V
Leakage current: 2µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.3kW
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 300W; common anode; SOT23-6; reel,tape; ESD
Case: SOT23-6
Max. off-state voltage: 5.25V
Semiconductor structure: common anode
Breakdown voltage: 6.1V
Leakage current: 2µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.3kW
Mounting: SMD
на замовлення 5191 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.39 грн |
50+ | 15.90 грн |
100+ | 14.30 грн |
167+ | 5.35 грн |
460+ | 5.05 грн |
ESDA6V1U1RL |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 200W; common anode; SO8; ESD
Case: SO8
Max. off-state voltage: 5V
Semiconductor structure: common anode
Breakdown voltage: 6.1V
Leakage current: 2µA
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 200W; common anode; SO8; ESD
Case: SO8
Max. off-state voltage: 5V
Semiconductor structure: common anode
Breakdown voltage: 6.1V
Leakage current: 2µA
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Mounting: SMD
на замовлення 184 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.05 грн |
16+ | 24.16 грн |
20+ | 19.80 грн |
50+ | 13.15 грн |
75+ | 12.16 грн |
96+ | 9.40 грн |
ESDA6V1W5 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 150W; quadruple,common anode; SOT323-5L
Case: SOT323-5L
Max. off-state voltage: 3V
Semiconductor structure: common anode; quadruple
Breakdown voltage: 6.1V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.15kW
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 150W; quadruple,common anode; SOT323-5L
Case: SOT323-5L
Max. off-state voltage: 3V
Semiconductor structure: common anode; quadruple
Breakdown voltage: 6.1V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.15kW
Mounting: SMD
на замовлення 12966 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.94 грн |
33+ | 11.93 грн |
39+ | 10.01 грн |
48+ | 8.10 грн |
54+ | 7.11 грн |
236+ | 3.82 грн |
650+ | 3.59 грн |
M24C32-DFDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 3943 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.76 грн |
57+ | 15.75 грн |
156+ | 14.91 грн |
500+ | 14.68 грн |
M24C32-DFMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
M24C32-DFMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 1478 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
16+ | 24.00 грн |
25+ | 21.33 грн |
61+ | 14.68 грн |
167+ | 13.91 грн |
M24C32-FDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
M24C32-FMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
M24C32-FMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 2389 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.94 грн |
25+ | 15.37 грн |
105+ | 8.49 грн |
289+ | 8.03 грн |
TDA7264 |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 50W; stereo; 5÷22.5VDC; Ch: 2; MULTIWATT8
Mounting: THT
Supply voltage: 5...22.5V DC
Impedance: 8Ω
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 50W
Integrated circuit features: stereo
Kind of package: tube
Amplifier class: AB
Case: MULTIWATT8
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 50W; stereo; 5÷22.5VDC; Ch: 2; MULTIWATT8
Mounting: THT
Supply voltage: 5...22.5V DC
Impedance: 8Ω
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 50W
Integrated circuit features: stereo
Kind of package: tube
Amplifier class: AB
Case: MULTIWATT8
на замовлення 297 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 689.92 грн |
2+ | 476.28 грн |
6+ | 450.28 грн |
25+ | 432.70 грн |
TDA7265 |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 50W; stereo; 5÷25VDC; Ch: 2; Amp.class: AB
Mounting: THT
Impedance: 8Ω
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 50W
Integrated circuit features: stereo
Kind of package: tube
Amplifier class: AB
Case: MULTIWATT11
Supply voltage: 5...25V DC
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 50W; stereo; 5÷25VDC; Ch: 2; Amp.class: AB
Mounting: THT
Impedance: 8Ω
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 50W
Integrated circuit features: stereo
Kind of package: tube
Amplifier class: AB
Case: MULTIWATT11
Supply voltage: 5...25V DC
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 433.05 грн |
3+ | 350.14 грн |
8+ | 331.02 грн |
TDA7265B |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; stereo; 8÷33VDC; Ch: 2; Amp.class: AB
Mounting: THT
Impedance: 8Ω
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 35W
Integrated circuit features: stereo
Amplifier class: AB
Operating temperature: -20...85°C
Case: MULTIWATT11
Supply voltage: 8...33V DC
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; stereo; 8÷33VDC; Ch: 2; Amp.class: AB
Mounting: THT
Impedance: 8Ω
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 35W
Integrated circuit features: stereo
Amplifier class: AB
Operating temperature: -20...85°C
Case: MULTIWATT11
Supply voltage: 8...33V DC
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TDA7269A |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 28W; stereo; 5÷20VDC; Ch: 2; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 28W
Integrated circuit features: stereo
Mounting: THT
Supply voltage: 5...20V DC
Number of channels: 2
Amplifier class: AB
Case: MULTIWATT11
Impedance: 8Ω
Kind of package: tube
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 28W; stereo; 5÷20VDC; Ch: 2; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 28W
Integrated circuit features: stereo
Mounting: THT
Supply voltage: 5...20V DC
Number of channels: 2
Amplifier class: AB
Case: MULTIWATT11
Impedance: 8Ω
Kind of package: tube
на замовлення 174 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 405.06 грн |
3+ | 314.97 грн |
8+ | 298.15 грн |
25+ | 297.39 грн |
100+ | 285.92 грн |
TDA7293V |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 100W; 12÷50VDC; Ch: 1; Amp.class: AB; 4Ω
Type of integrated circuit: audio amplifier
Output power: 100W
Mounting: THT
Supply voltage: 12...50V DC
Number of channels: 1
Amplifier class: AB
Case: MULTIWATT15
Impedance: 4Ω
Kind of package: tube
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 100W; 12÷50VDC; Ch: 1; Amp.class: AB; 4Ω
Type of integrated circuit: audio amplifier
Output power: 100W
Mounting: THT
Supply voltage: 12...50V DC
Number of channels: 1
Amplifier class: AB
Case: MULTIWATT15
Impedance: 4Ω
Kind of package: tube
на замовлення 81 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 797.77 грн |
2+ | 635.29 грн |
4+ | 600.89 грн |
25+ | 600.12 грн |
TDA7294V |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 100W; 10÷40VDC; Ch: 1; Amp.class: AB; 4Ω
Supply voltage: 10...40V DC
Number of channels: 1
Type of integrated circuit: audio amplifier
Impedance: 4Ω
Amplifier class: AB
Case: MULTIWATT15
Kind of package: tube
Mounting: THT
Output power: 100W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 100W; 10÷40VDC; Ch: 1; Amp.class: AB; 4Ω
Supply voltage: 10...40V DC
Number of channels: 1
Type of integrated circuit: audio amplifier
Impedance: 4Ω
Amplifier class: AB
Case: MULTIWATT15
Kind of package: tube
Mounting: THT
Output power: 100W
на замовлення 138 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 601.01 грн |
3+ | 376.13 грн |
7+ | 355.49 грн |
TDA749213TR |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 50W; 8÷26VDC; Ch: 2; Amp.class: D; 60Ω
Type of integrated circuit: audio amplifier
Output power: 50W
Mounting: SMD
Supply voltage: 8...26V DC
Number of channels: 2
Amplifier class: D
Case: PowerSSO36
Impedance: 60Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 50W; 8÷26VDC; Ch: 2; Amp.class: D; 60Ω
Type of integrated circuit: audio amplifier
Output power: 50W
Mounting: SMD
Supply voltage: 8...26V DC
Number of channels: 2
Amplifier class: D
Case: PowerSSO36
Impedance: 60Ω
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TDA7561 |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 400kHz; Pout: 60W; I2C; stereo; 8÷18VDC; Ch: 4
Type of integrated circuit: audio amplifier
Output power: 60W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Frequency: 400kHz
Integrated circuit features: stereo
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 400kHz; Pout: 60W; I2C; stereo; 8÷18VDC; Ch: 4
Type of integrated circuit: audio amplifier
Output power: 60W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Frequency: 400kHz
Integrated circuit features: stereo
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 697.33 грн |
2+ | 525.97 грн |
5+ | 496.92 грн |
TDA7564B |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 72W; I2C; 8÷18VDC; Ch: 4; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 72W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 72W; I2C; 8÷18VDC; Ch: 4; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 72W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
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TDA7575B |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 75W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 2
Amplifier class: AB
Case: FLEXIWATT27
Impedance: 2Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 75W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 2
Amplifier class: AB
Case: FLEXIWATT27
Impedance: 2Ω
на замовлення 16 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 891.63 грн |
2+ | 641.41 грн |
4+ | 606.24 грн |
TDA7850 |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80W; MOSFET,rail-to-rail output; Ch: 4
Case: FLEXIWATT25
Supply voltage: 8...18V DC
Impedance: 2Ω
Type of integrated circuit: audio amplifier
Number of channels: 4
Output power: 80W
Integrated circuit features: MOSFET; rail-to-rail output
Amplifier class: AB
Mounting: THT
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80W; MOSFET,rail-to-rail output; Ch: 4
Case: FLEXIWATT25
Supply voltage: 8...18V DC
Impedance: 2Ω
Type of integrated circuit: audio amplifier
Number of channels: 4
Output power: 80W
Integrated circuit features: MOSFET; rail-to-rail output
Amplifier class: AB
Mounting: THT
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 782.13 грн |
2+ | 535.91 грн |
5+ | 506.86 грн |
17+ | 487.74 грн |
M24C16-FDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
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M24C16-FMC5TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
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M24C16-FMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
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M24C16-FMH6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -20...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -20...85°C
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M24C16-FMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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M24C16-RDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
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M24C16-RMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
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M24C16-RMN6P |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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M24C16-RMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
на замовлення 13427 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.35 грн |
46+ | 8.49 грн |
100+ | 6.96 грн |
161+ | 5.58 грн |
441+ | 5.27 грн |
1000+ | 5.12 грн |
2500+ | 5.05 грн |
M24C16-WMN6P | ![]() |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Memory organisation: 2kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Memory organisation: 2kx8bit
на замовлення 1943 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.47 грн |
73+ | 12.31 грн |
200+ | 11.62 грн |
1500+ | 11.39 грн |
M24C16-WMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
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STB13N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 993 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 188.53 грн |
10+ | 94.03 грн |
27+ | 88.68 грн |
200+ | 85.62 грн |
STD13N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
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STD13N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1945 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 137.49 грн |
10+ | 105.50 грн |
12+ | 78.74 грн |
32+ | 74.16 грн |
500+ | 71.86 грн |
STF13N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 193.47 грн |
10+ | 92.50 грн |
12+ | 81.04 грн |
31+ | 76.45 грн |
STF13N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 281 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 156.43 грн |
10+ | 71.86 грн |
14+ | 68.80 грн |
36+ | 64.98 грн |
50+ | 63.45 грн |
100+ | 61.92 грн |
STF33N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 80A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 128mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 80A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 128mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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STF33N60M6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
STP13N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
1.5KE440A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 440V; 3.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 440V; 3.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
на замовлення 796 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 81.51 грн |
10+ | 66.05 грн |
37+ | 24.69 грн |
100+ | 23.32 грн |
1.5KE440CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
на замовлення 1069 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 90.56 грн |
10+ | 64.75 грн |
30+ | 30.50 грн |
81+ | 28.82 грн |
LM2904AHYPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; TSSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.6V/μs
Operating temperature: -40...150°C
Input offset voltage: 6mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
Operating voltage: 3...30V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; TSSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.6V/μs
Operating temperature: -40...150°C
Input offset voltage: 6mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
Operating voltage: 3...30V
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В кошику
од. на суму грн.
LM2904AYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power
Kind of package: reel; tape
на замовлення 51283 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.35 грн |
35+ | 10.93 грн |
40+ | 9.79 грн |
42+ | 9.17 грн |
100+ | 8.49 грн |
109+ | 8.26 грн |
250+ | 8.18 грн |
299+ | 7.80 грн |
1000+ | 7.57 грн |
BTA25-600B | ![]() |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 25A; RD91; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: RD91
Gate current: 50mA
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 25A; RD91; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: RD91
Gate current: 50mA
Mounting: THT
Kind of package: bulk
на замовлення 87 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 625.70 грн |
2+ | 477.04 грн |
6+ | 451.05 грн |
BTA41-600BRG | ![]() |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
на замовлення 2564 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 235.46 грн |
3+ | 210.23 грн |
5+ | 193.42 грн |
13+ | 182.71 грн |
300+ | 178.13 грн |
BTA41-700BRG | ![]() |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 700V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
на замовлення 18 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 624.06 грн |
3+ | 415.12 грн |
6+ | 392.95 грн |
1N5822RL |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.475V
Max. forward impulse current: 80A
Kind of package: reel
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.475V
Max. forward impulse current: 80A
Kind of package: reel
Max. load current: 10A
на замовлення 728 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.29 грн |
27+ | 14.45 грн |
100+ | 11.01 грн |
127+ | 7.03 грн |
349+ | 6.65 грн |
1.5KE400ARL |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
на замовлення 950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.92 грн |
10+ | 61.01 грн |
25+ | 56.65 грн |
31+ | 28.82 грн |
85+ | 27.29 грн |
LM358D |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube
Integrated circuit features: low power
Kind of package: tube
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube
Integrated circuit features: low power
Kind of package: tube
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
на замовлення 3726 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.23 грн |
53+ | 7.26 грн |
100+ | 6.57 грн |
171+ | 5.27 грн |
470+ | 4.97 грн |
2500+ | 4.82 грн |
LM358DT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.6V/μs
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Operating voltage: 3...30V
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
на замовлення 151462 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.53 грн |
54+ | 7.19 грн |
64+ | 6.04 грн |
100+ | 5.20 грн |
179+ | 5.05 грн |
250+ | 4.89 грн |
491+ | 4.74 грн |
1000+ | 4.51 грн |
P6KE200A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Tolerance: ±5%
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Tolerance: ±5%
на замовлення 885 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.63 грн |
12+ | 33.64 грн |
25+ | 29.43 грн |
75+ | 12.00 грн |
205+ | 11.39 грн |
LM234DT |
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Виробник: STMicroelectronics
Category: Integrated circuits - others
Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3%
Type of integrated circuit: current source
Operating voltage: 1...40V
Mounting: SMD
Case: SO8
Operating temperature: -25...100°C
Kind of package: reel; tape
Tolerance: ±3%
Output current: 10mA
Category: Integrated circuits - others
Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3%
Type of integrated circuit: current source
Operating voltage: 1...40V
Mounting: SMD
Case: SO8
Operating temperature: -25...100°C
Kind of package: reel; tape
Tolerance: ±3%
Output current: 10mA
на замовлення 1667 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 132.55 грн |
10+ | 93.27 грн |
22+ | 41.28 грн |
60+ | 38.99 грн |
1.5KE400CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
на замовлення 2794 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.98 грн |
10+ | 60.24 грн |
31+ | 29.59 грн |
84+ | 27.98 грн |
1200+ | 26.83 грн |
1N5819RL | ![]() |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel
Max. load current: 10A
на замовлення 3679 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.17 грн |
40+ | 9.56 грн |
46+ | 8.49 грн |
54+ | 7.17 грн |
291+ | 3.09 грн |
799+ | 2.92 грн |
USBLC6-2P6 | ![]() |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT666; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT666
Max. off-state voltage: 5V
Leakage current: 10nA
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT666; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT666
Max. off-state voltage: 5V
Leakage current: 10nA
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
на замовлення 2779 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.64 грн |
21+ | 18.81 грн |
25+ | 16.51 грн |
50+ | 14.98 грн |
115+ | 7.80 грн |
316+ | 7.34 грн |
P6KE15CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
на замовлення 871 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.16 грн |
14+ | 27.45 грн |
100+ | 8.94 грн |
274+ | 8.49 грн |
STP4NK80Z | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 80W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 80W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 28 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.45 грн |
7+ | 57.34 грн |
10+ | 48.62 грн |
21+ | 44.80 грн |