Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170159) > Сторінка 2753 з 2836
Фото | Назва | Виробник | Інформація |
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L6386ED013TR | STMicroelectronics |
![]() Description: IC: driver; push-pull; SO14; 400mA; 580V; Ch: 2; 400kHz; Usup: 17V Type of integrated circuit: driver Topology: push-pull Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver Case: SO14 Output current: 0.4A Output voltage: 580V Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Frequency: 400kHz Kind of package: reel; tape Supply voltage: 17V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTB10-600BWRG | STMicroelectronics |
![]() ![]() Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 50mA Mounting: THT Kind of package: tube Technology: Snubberless™ |
на замовлення 162 шт: термін постачання 21-30 дні (днів) |
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BTB10-800BWRG | STMicroelectronics |
![]() Description: Triac; 800V; 10A; TO220AB; Igt: 50mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 10A Case: TO220AB Gate current: 50mA Mounting: THT Kind of package: tube Technology: Snubberless™ |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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BTB16-700BWRG | STMicroelectronics |
![]() Description: Triac; 700V; 16A; TO220AB; Igt: 50mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 700V Max. load current: 16A Case: TO220AB Gate current: 50mA Mounting: THT Kind of package: tube Technology: Snubberless™ |
на замовлення 310 шт: термін постачання 21-30 дні (днів) |
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1.5KE68CA | STMicroelectronics |
![]() Description: Diode: TVS; 68V; 17.7A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 53V Breakdown voltage: 68V Max. forward impulse current: 17.7A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
на замовлення 502 шт: термін постачання 21-30 дні (днів) |
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P6KE400CA | STMicroelectronics |
![]() Description: Diode: TVS; 400V; 1.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 1.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack |
на замовлення 463 шт: термін постачання 21-30 дні (днів) |
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MJD127T4 | STMicroelectronics |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of package: reel; tape |
на замовлення 4428 шт: термін постачання 21-30 дні (днів) |
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STGP10NC60KD | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 19nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 247 шт: термін постачання 21-30 дні (днів) |
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STM32F411RCT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG Clock frequency: 100MHz Number of inputs/outputs: 50 Kind of architecture: Cortex M4 Family: STM32F4 Memory: 128kB SRAM; 256kB FLASH Mounting: SMD Case: LQFP64 Supply voltage: 1.7...3.6V DC Type of integrated circuit: STM32 ARM microcontroller |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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STM32F411RET6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG Clock frequency: 100MHz Number of inputs/outputs: 50 Kind of architecture: Cortex M4 Family: STM32F4 Memory: 128kB SRAM; 512kB FLASH Mounting: SMD Case: LQFP64 Supply voltage: 1.7...3.6V DC Type of integrated circuit: STM32 ARM microcontroller |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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STM32F411VET6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 100MHz; LQFP100; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 81 Case: LQFP100 Supply voltage: 1.7...3.6V DC Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG Kind of architecture: Cortex M4 Memory: 128kB SRAM; 512kB FLASH Family: STM32F4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBO40-40G | STMicroelectronics |
![]() Description: Diode: TVS array; 35V; 120A; 1.5kW; D2PAK; Features: RBO; ASD™ Type of diode: TVS array Features of semiconductor devices: RBO Technology: ASD™ Peak pulse power dissipation: 1.5kW Mounting: SMD Case: D2PAK Max. forward impulse current: 120A Breakdown voltage: 35V Leakage current: 0.1mA |
на замовлення 516 шт: термін постачання 21-30 дні (днів) |
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Z0109MA 1AA2 | STMicroelectronics |
![]() Description: Triac; 600V; 1A; TO92; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Mounting: THT Kind of package: bulk |
на замовлення 2345 шт: термін постачання 21-30 дні (днів) |
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Z0109MA 5AL2 | STMicroelectronics |
![]() Description: Triac; 600V; 1A; TO92; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Mounting: THT Kind of package: tape |
на замовлення 1714 шт: термін постачання 21-30 дні (днів) |
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Z0109NN6AA4 | STMicroelectronics |
![]() Description: Triac; 800V; 1A; SOT223; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 10mA Mounting: SMD Kind of package: reel; tape |
на замовлення 1070 шт: термін постачання 21-30 дні (днів) |
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STP120NF10 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W Case: TO220-3 Drain-source voltage: 100V Drain current: 77A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 312W Polarisation: unipolar Kind of package: tube Technology: STripFET™ II Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
на замовлення 663 шт: термін постачання 21-30 дні (днів) |
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MJD31CT4 | STMicroelectronics |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape |
на замовлення 2240 шт: термін постачання 21-30 дні (днів) |
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LM317LZ | STMicroelectronics |
![]() Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 100mA; TO92 Output voltage: 1.2...37V Type of integrated circuit: voltage regulator Number of channels: 1 Kind of package: bulk Manufacturer series: LM317L Kind of voltage regulator: adjustable; linear Mounting: THT Operating temperature: 0...125°C Case: TO92 Output current: 0.1A |
на замовлення 1724 шт: термін постачання 21-30 дні (днів) |
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LM317LZ-AP | STMicroelectronics |
![]() Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Output voltage: 1.2...37V Type of integrated circuit: voltage regulator Number of channels: 1 Kind of package: Ammo Pack Manufacturer series: LM317L Kind of voltage regulator: adjustable; linear Mounting: THT Operating temperature: 0...125°C Case: TO92 Output current: 0.1A |
на замовлення 4877 шт: термін постачання 21-30 дні (днів) |
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LM317LZ-TR | STMicroelectronics |
![]() Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Output voltage: 1.2...37V Type of integrated circuit: voltage regulator Number of channels: 1 Kind of package: reel; tape Manufacturer series: LM317L Kind of voltage regulator: adjustable; linear Mounting: THT Operating temperature: 0...125°C Case: TO92 Output current: 0.1A |
на замовлення 5857 шт: термін постачання 21-30 дні (днів) |
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BTB16-800CWRG | STMicroelectronics |
![]() Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube Technology: Snubberless™ |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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BTB16-800SWRG | STMicroelectronics |
![]() Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; logic level Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10mA Mounting: THT Kind of package: tube Features of semiconductor devices: logic level |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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USBLC6-4SC6 | STMicroelectronics |
![]() ![]() Description: Diode: TVS array; 6V; bidirectional; SOT23-6; reel,tape; ESD Application: Ethernet; USB Semiconductor structure: bidirectional Breakdown voltage: 6V Leakage current: 10nA Max. off-state voltage: 5V Kind of package: reel; tape Type of diode: TVS array Case: SOT23-6 Version: ESD Mounting: SMD |
на замовлення 3526 шт: термін постачання 21-30 дні (днів) |
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USBLC6-4SC6Y | STMicroelectronics |
![]() Description: Diode: TVS array; 6V; bidirectional; SOT23-6; reel,tape; ESD Application: automotive industry; Ethernet; USB Semiconductor structure: bidirectional Breakdown voltage: 6V Max. off-state voltage: 5V Kind of package: reel; tape Type of diode: TVS array Case: SOT23-6 Version: ESD Mounting: SMD |
на замовлення 2904 шт: термін постачання 21-30 дні (днів) |
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LM258D | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.6V/μs Operating temperature: -40...105°C Input offset voltage: 1mV Integrated circuit features: low power Kind of package: tube |
на замовлення 413 шт: термін постачання 21-30 дні (днів) |
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LM258DT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.6V/μs Operating temperature: -40...105°C Input offset voltage: 1mV Integrated circuit features: low power Kind of package: reel; tape |
на замовлення 4959 шт: термін постачання 21-30 дні (днів) |
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STP80NF55-06 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ II |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ6.0A-TR | STMicroelectronics |
![]() Description: Diode: TVS; 400W; 7.05V; 170A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 7.05V Max. forward impulse current: 170A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 50µA Kind of package: reel; tape |
на замовлення 5032 шт: термін постачання 21-30 дні (днів) |
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STP240N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Case: TO220-3 Kind of package: tube Drain-source voltage: 100V Drain current: 110A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Gate charge: 160nC Technology: STripFET™ F7 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 440A Mounting: THT |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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TIP32C | STMicroelectronics |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: TO220AB Mounting: THT Power dissipation: 40W Kind of package: tube |
на замовлення 430 шт: термін постачання 21-30 дні (днів) |
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STM1061N34WX6F | STMicroelectronics |
![]() Description: IC: supervisor circuit; voltage detector; 0.7÷6VDC; SOT23-3 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Active logical level: low Supply voltage: 0.7...6V DC Case: SOT23-3 Operating temperature: -40...85°C Mounting: SMD Threshold on-voltage: 3.4V Kind of output: open drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STTH6003CW | STMicroelectronics |
![]() ![]() Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; TO247-3; 55ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 0.3kA Case: TO247-3 Max. forward voltage: 1V Max. load current: 60A Reverse recovery time: 55ns |
на замовлення 139 шт: термін постачання 21-30 дні (днів) |
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L78M24ACDT-TR | STMicroelectronics |
![]() Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 24V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: L78M Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 27...38V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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L78M24CDT-TR | STMicroelectronics |
![]() Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 24V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: L78M Kind of package: tube Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 27...38V |
на замовлення 8348 шт: термін постачання 21-30 дні (днів) |
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L78M24CDT-TR | STMicroelectronics |
![]() Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 24V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: L78M Kind of package: reel; tape Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 27...38V |
на замовлення 1960 шт: термін постачання 21-30 дні (днів) |
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L78M24CV | STMicroelectronics |
![]() Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 24V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: L78M Kind of package: tube Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.51...0.6mm Input voltage: 27...38V |
на замовлення 591 шт: термін постачання 21-30 дні (днів) |
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L78M24CV-DG | STMicroelectronics |
![]() Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 0.002V Output voltage: 24V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: L78M Kind of package: tube Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 1.23...1.32mm Input voltage: 27...38V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STM32F0DISCOVERY | STMicroelectronics |
![]() Description: Dev.kit: STM32; prototype board; Comp: STM32F051R8T6 Type of development kit: STM32 Kit contents: prototype board Components: STM32F051R8T6 Kind of connector: pin strips; USB B mini |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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1.5KE300A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 256V Breakdown voltage: 300V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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1.5KE300ARL | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 256V Breakdown voltage: 300V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STP6NK60ZFP | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.8A Power dissipation: 110W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 430 шт: термін постачання 21-30 дні (днів) |
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STW26NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 140W Case: TO247 Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 119 шт: термін постачання 21-30 дні (днів) |
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LMV321ILT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1MHz; 2.7÷6V; Ch: 1; SOT23-5; reel,tape Kind of package: reel; tape Slew rate: 0.45V/μs Mounting: SMT Operating temperature: -40...125°C Case: SOT23-5 Operating voltage: 2.7...6V Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 1MHz |
на замовлення 3223 шт: термін постачання 21-30 дні (днів) |
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LMV321IYLT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.3MHz; 2.7÷6V; Ch: 1; SOT23-5; IB: 95nA Input offset voltage: 6mV Application: automotive industry Integrated circuit features: low voltage; rail-to-rail Kind of package: reel; tape Slew rate: 0.45V/μs Input offset current: 25nA Input bias current: 95nA Mounting: SMT Operating temperature: -40...125°C Case: SOT23-5 Operating voltage: 2.7...6V Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 1.3MHz |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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LMV321LICT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.3MHz; 2.7÷5.5V; Ch: 1; SC70-5 Input offset voltage: 1mV Kind of package: reel; tape Slew rate: 0.7V/μs Mounting: SMT Operating temperature: -40...125°C Case: SC70-5 Operating voltage: 2.7...5.5V Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 1.3MHz |
на замовлення 4303 шт: термін постачання 21-30 дні (днів) |
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LMV321LILT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.3MHz; 2.7÷5.5V; Ch: 1; SOT23-5 Input offset voltage: 1mV Kind of package: reel; tape Slew rate: 0.7V/μs Mounting: SMT Operating temperature: -40...125°C Case: SOT23-5 Operating voltage: 2.7...5.5V Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 1.3MHz |
на замовлення 17650 шт: термін постачання 21-30 дні (днів) |
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LMV321RILT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1MHz; 2.7÷6V; Ch: 1; SOT23-5; reel,tape Input offset voltage: 0.1mV Kind of package: reel; tape Slew rate: 0.35V/μs Mounting: SMT Operating temperature: -40...125°C Case: SOT23-5 Operating voltage: 2.7...6V Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 1MHz |
на замовлення 1443 шт: термін постачання 21-30 дні (днів) |
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LMV321RIYLT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1MHz; 2.7÷6V; Ch: 1; SOT23-5; reel,tape Input offset voltage: 0.1mV Kind of package: reel; tape Slew rate: 0.35V/μs Mounting: SMT Operating temperature: -40...125°C Case: SOT23-5 Operating voltage: 2.7...6V Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 1MHz |
на замовлення 2968 шт: термін постачання 21-30 дні (днів) |
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MJE350 | STMicroelectronics |
![]() Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; SOT32 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: SOT32 Mounting: THT Kind of package: tube |
на замовлення 1452 шт: термін постачання 21-30 дні (днів) |
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STD4N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Pulsed drain current: 12A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STF4N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STP4N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
STU4N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STP15N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 375mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Pulsed drain current: 56A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STD16N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 710V Drain current: 12A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 279mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2382 шт: термін постачання 21-30 дні (днів) |
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STF16N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 279mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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STP16N65M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Pulsed drain current: 44A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Gate charge: 19.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STP16N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 25W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Power dissipation: 25W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 279mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
STM32G071G8U6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 26 Case: UFQFPN28 Supply voltage: 1.7...3.6V DC Interface: I2C x2; I2S; SPI x2; USART x4 Kind of architecture: Cortex M0+ Memory: 36kB SRAM; 128kB FLASH Family: STM32G0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32G071G8U6N | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 26 Case: UFQFPN28 Supply voltage: 1.71...3.6V DC Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M0+ Memory: 36kB SRAM; 64kB FLASH Family: STM32G0 Number of 16bit timers: 10 Number of 8bit timers: 3 Number of 12bit A/D converters: 11 Number of 32bit timers: 1 Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Operating temperature: -40...85°C Number of 12bit D/A converters: 2 |
товару немає в наявності |
В кошику од. на суму грн. |
L6386ED013TR |
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Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO14; 400mA; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO14
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: reel; tape
Supply voltage: 17V
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO14; 400mA; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO14
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: reel; tape
Supply voltage: 17V
товару немає в наявності
В кошику
од. на суму грн.
BTB10-600BWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
на замовлення 162 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 91.39 грн |
12+ | 31.96 грн |
33+ | 27.29 грн |
90+ | 25.84 грн |
BTB10-800BWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 10A; TO220AB; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 800V; 10A; TO220AB; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
на замовлення 130 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 95.50 грн |
10+ | 49.69 грн |
35+ | 26.22 грн |
94+ | 24.85 грн |
BTB16-700BWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 16A; TO220AB; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 700V; 16A; TO220AB; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
на замовлення 310 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 92.21 грн |
10+ | 76.45 грн |
16+ | 58.87 грн |
42+ | 55.81 грн |
1.5KE68CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; 17.7A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 68V
Max. forward impulse current: 17.7A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; 17.7A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 68V
Max. forward impulse current: 17.7A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
на замовлення 502 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
10+ | 40.52 грн |
59+ | 15.37 грн |
162+ | 14.53 грн |
P6KE400CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 1.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 1.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
на замовлення 463 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.22 грн |
10+ | 38.22 грн |
25+ | 33.41 грн |
63+ | 14.22 грн |
172+ | 13.46 грн |
MJD127T4 |
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Виробник: STMicroelectronics
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 4428 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.51 грн |
10+ | 47.09 грн |
57+ | 15.75 грн |
157+ | 14.91 грн |
STGP10NC60KD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 247 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 155.60 грн |
15+ | 61.92 грн |
40+ | 58.87 грн |
STM32F411RCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Clock frequency: 100MHz
Number of inputs/outputs: 50
Kind of architecture: Cortex M4
Family: STM32F4
Memory: 128kB SRAM; 256kB FLASH
Mounting: SMD
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Clock frequency: 100MHz
Number of inputs/outputs: 50
Kind of architecture: Cortex M4
Family: STM32F4
Memory: 128kB SRAM; 256kB FLASH
Mounting: SMD
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 102 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 457.75 грн |
3+ | 345.55 грн |
8+ | 326.44 грн |
100+ | 324.14 грн |
STM32F411RET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Clock frequency: 100MHz
Number of inputs/outputs: 50
Kind of architecture: Cortex M4
Family: STM32F4
Memory: 128kB SRAM; 512kB FLASH
Mounting: SMD
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 1.7÷3.6VDC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Clock frequency: 100MHz
Number of inputs/outputs: 50
Kind of architecture: Cortex M4
Family: STM32F4
Memory: 128kB SRAM; 512kB FLASH
Mounting: SMD
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 46 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 772.25 грн |
2+ | 558.08 грн |
3+ | 557.31 грн |
5+ | 527.50 грн |
STM32F411VET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 81
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 512kB FLASH
Family: STM32F4
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 81
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: I2C; IrDA; LIN; MMC; SD; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 512kB FLASH
Family: STM32F4
товару немає в наявності
В кошику
од. на суму грн.
RBO40-40G |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 35V; 120A; 1.5kW; D2PAK; Features: RBO; ASD™
Type of diode: TVS array
Features of semiconductor devices: RBO
Technology: ASD™
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 120A
Breakdown voltage: 35V
Leakage current: 0.1mA
Category: Protection diodes - arrays
Description: Diode: TVS array; 35V; 120A; 1.5kW; D2PAK; Features: RBO; ASD™
Type of diode: TVS array
Features of semiconductor devices: RBO
Technology: ASD™
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 120A
Breakdown voltage: 35V
Leakage current: 0.1mA
на замовлення 516 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 220.64 грн |
7+ | 141.43 грн |
18+ | 133.79 грн |
100+ | 133.02 грн |
200+ | 129.20 грн |
Z0109MA 1AA2 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: bulk
на замовлення 2345 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.29 грн |
20+ | 19.11 грн |
26+ | 14.98 грн |
100+ | 10.40 грн |
131+ | 6.80 грн |
361+ | 6.42 грн |
1000+ | 6.35 грн |
Z0109MA 5AL2 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: tape
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Mounting: THT
Kind of package: tape
на замовлення 1714 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.28 грн |
11+ | 35.17 грн |
100+ | 22.17 грн |
127+ | 7.03 грн |
349+ | 6.65 грн |
Z0109NN6AA4 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
на замовлення 1070 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.11 грн |
20+ | 19.11 грн |
100+ | 10.63 грн |
116+ | 7.72 грн |
318+ | 7.34 грн |
STP120NF10 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W
Case: TO220-3
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Polarisation: unipolar
Kind of package: tube
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W
Case: TO220-3
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Polarisation: unipolar
Kind of package: tube
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 663 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 328.49 грн |
3+ | 267.57 грн |
9+ | 110.09 грн |
23+ | 103.97 грн |
MJD31CT4 |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
на замовлення 2240 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 94.68 грн |
7+ | 62.38 грн |
10+ | 56.11 грн |
50+ | 43.19 грн |
68+ | 13.23 грн |
186+ | 12.54 грн |
LM317LZ |
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Виробник: STMicroelectronics
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 100mA; TO92
Output voltage: 1.2...37V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: bulk
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Mounting: THT
Operating temperature: 0...125°C
Case: TO92
Output current: 0.1A
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 100mA; TO92
Output voltage: 1.2...37V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: bulk
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Mounting: THT
Operating temperature: 0...125°C
Case: TO92
Output current: 0.1A
на замовлення 1724 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.94 грн |
32+ | 12.23 грн |
100+ | 10.93 грн |
138+ | 6.50 грн |
380+ | 6.19 грн |
LM317LZ-AP |
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Виробник: STMicroelectronics
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: Ammo Pack
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Mounting: THT
Operating temperature: 0...125°C
Case: TO92
Output current: 0.1A
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: Ammo Pack
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Mounting: THT
Operating temperature: 0...125°C
Case: TO92
Output current: 0.1A
на замовлення 4877 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.58 грн |
20+ | 20.11 грн |
50+ | 17.74 грн |
68+ | 13.15 грн |
187+ | 12.38 грн |
LM317LZ-TR |
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Виробник: STMicroelectronics
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Mounting: THT
Operating temperature: 0...125°C
Case: TO92
Output current: 0.1A
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Mounting: THT
Operating temperature: 0...125°C
Case: TO92
Output current: 0.1A
на замовлення 5857 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.41 грн |
28+ | 13.76 грн |
100+ | 11.85 грн |
150+ | 5.96 грн |
412+ | 5.66 грн |
BTB16-800CWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 118.55 грн |
10+ | 78.44 грн |
25+ | 65.36 грн |
28+ | 32.72 грн |
75+ | 30.96 грн |
BTB16-800SWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
на замовлення 110 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.10 грн |
7+ | 61.16 грн |
10+ | 54.28 грн |
29+ | 31.34 грн |
79+ | 29.82 грн |
USBLC6-4SC6 | ![]() |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23-6; reel,tape; ESD
Application: Ethernet; USB
Semiconductor structure: bidirectional
Breakdown voltage: 6V
Leakage current: 10nA
Max. off-state voltage: 5V
Kind of package: reel; tape
Type of diode: TVS array
Case: SOT23-6
Version: ESD
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23-6; reel,tape; ESD
Application: Ethernet; USB
Semiconductor structure: bidirectional
Breakdown voltage: 6V
Leakage current: 10nA
Max. off-state voltage: 5V
Kind of package: reel; tape
Type of diode: TVS array
Case: SOT23-6
Version: ESD
Mounting: SMD
на замовлення 3526 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.64 грн |
50+ | 11.62 грн |
100+ | 10.32 грн |
160+ | 5.58 грн |
440+ | 5.27 грн |
3000+ | 5.20 грн |
USBLC6-4SC6Y |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23-6; reel,tape; ESD
Application: automotive industry; Ethernet; USB
Semiconductor structure: bidirectional
Breakdown voltage: 6V
Max. off-state voltage: 5V
Kind of package: reel; tape
Type of diode: TVS array
Case: SOT23-6
Version: ESD
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23-6; reel,tape; ESD
Application: automotive industry; Ethernet; USB
Semiconductor structure: bidirectional
Breakdown voltage: 6V
Max. off-state voltage: 5V
Kind of package: reel; tape
Type of diode: TVS array
Case: SOT23-6
Version: ESD
Mounting: SMD
на замовлення 2904 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.70 грн |
20+ | 19.65 грн |
100+ | 15.14 грн |
118+ | 7.57 грн |
325+ | 7.11 грн |
LM258D |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 1mV
Integrated circuit features: low power
Kind of package: tube
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; tube
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 1mV
Integrated circuit features: low power
Kind of package: tube
на замовлення 413 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.29 грн |
15+ | 26.15 грн |
25+ | 24.16 грн |
45+ | 19.95 грн |
123+ | 18.88 грн |
LM258DT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 1mV
Integrated circuit features: low power
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 1mV
Integrated circuit features: low power
Kind of package: reel; tape
на замовлення 4959 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.88 грн |
63+ | 6.12 грн |
100+ | 5.37 грн |
213+ | 4.20 грн |
585+ | 3.98 грн |
STP80NF55-06 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
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В кошику
од. на суму грн.
SMAJ6.0A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.05V; 170A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 170A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.05V; 170A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 170A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 5032 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.94 грн |
29+ | 13.46 грн |
100+ | 11.47 грн |
242+ | 3.69 грн |
665+ | 3.49 грн |
STP240N10F7 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Case: TO220-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 160nC
Technology: STripFET™ F7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 440A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Case: TO220-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 160nC
Technology: STripFET™ F7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 440A
Mounting: THT
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 340.02 грн |
5+ | 217.88 грн |
12+ | 205.65 грн |
TIP32C |
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Виробник: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Power dissipation: 40W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Power dissipation: 40W
Kind of package: tube
на замовлення 430 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.87 грн |
12+ | 33.94 грн |
43+ | 20.87 грн |
118+ | 19.80 грн |
STM1061N34WX6F |
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Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; 0.7÷6VDC; SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Active logical level: low
Supply voltage: 0.7...6V DC
Case: SOT23-3
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 3.4V
Kind of output: open drain
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; 0.7÷6VDC; SOT23-3
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Active logical level: low
Supply voltage: 0.7...6V DC
Case: SOT23-3
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 3.4V
Kind of output: open drain
товару немає в наявності
В кошику
од. на суму грн.
STTH6003CW | ![]() |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; TO247-3; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-3
Max. forward voltage: 1V
Max. load current: 60A
Reverse recovery time: 55ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 300A; TO247-3; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-3
Max. forward voltage: 1V
Max. load current: 60A
Reverse recovery time: 55ns
на замовлення 139 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 288.15 грн |
5+ | 202.59 грн |
13+ | 191.12 грн |
120+ | 187.30 грн |
L78M24ACDT-TR |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 27...38V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 27...38V
товару немає в наявності
В кошику
од. на суму грн.
L78M24CDT-TR |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 27...38V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 27...38V
на замовлення 8348 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
25+ | 21.33 грн |
54+ | 16.82 грн |
147+ | 15.90 грн |
L78M24CDT-TR |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 27...38V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; DPAK; SMD; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 27...38V
на замовлення 1960 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.76 грн |
19+ | 20.49 грн |
50+ | 17.12 грн |
100+ | 15.75 грн |
107+ | 8.41 грн |
293+ | 7.95 грн |
L78M24CV |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.51...0.6mm
Input voltage: 27...38V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 24V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.51...0.6mm
Input voltage: 27...38V
на замовлення 591 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 82.33 грн |
11+ | 35.55 грн |
25+ | 32.18 грн |
50+ | 29.82 грн |
52+ | 17.35 грн |
142+ | 16.36 грн |
L78M24CV-DG |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.002V
Output voltage: 24V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 1.23...1.32mm
Input voltage: 27...38V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 0.5A; TO220AB; THT; L78M
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.002V
Output voltage: 24V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: L78M
Kind of package: tube
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 1.23...1.32mm
Input voltage: 27...38V
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STM32F0DISCOVERY |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; prototype board; Comp: STM32F051R8T6
Type of development kit: STM32
Kit contents: prototype board
Components: STM32F051R8T6
Kind of connector: pin strips; USB B mini
Category: STM development kits
Description: Dev.kit: STM32; prototype board; Comp: STM32F051R8T6
Type of development kit: STM32
Kit contents: prototype board
Components: STM32F051R8T6
Kind of connector: pin strips; USB B mini
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 961.61 грн |
3+ | 847.05 грн |
1.5KE300A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
на замовлення 77 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.21 грн |
10+ | 63.53 грн |
25+ | 59.02 грн |
35+ | 26.30 грн |
1.5KE300ARL |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 300V; 5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
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STP6NK60ZFP | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 430 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 88.92 грн |
10+ | 67.28 грн |
19+ | 49.69 грн |
50+ | 46.63 грн |
STW26NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 119 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 315.32 грн |
7+ | 131.49 грн |
19+ | 124.61 грн |
LMV321ILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷6V; Ch: 1; SOT23-5; reel,tape
Kind of package: reel; tape
Slew rate: 0.45V/μs
Mounting: SMT
Operating temperature: -40...125°C
Case: SOT23-5
Operating voltage: 2.7...6V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷6V; Ch: 1; SOT23-5; reel,tape
Kind of package: reel; tape
Slew rate: 0.45V/μs
Mounting: SMT
Operating temperature: -40...125°C
Case: SOT23-5
Operating voltage: 2.7...6V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1MHz
на замовлення 3223 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.64 грн |
22+ | 17.58 грн |
100+ | 14.60 грн |
128+ | 7.03 грн |
353+ | 6.65 грн |
3000+ | 6.50 грн |
LMV321IYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 2.7÷6V; Ch: 1; SOT23-5; IB: 95nA
Input offset voltage: 6mV
Application: automotive industry
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Slew rate: 0.45V/μs
Input offset current: 25nA
Input bias current: 95nA
Mounting: SMT
Operating temperature: -40...125°C
Case: SOT23-5
Operating voltage: 2.7...6V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1.3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 2.7÷6V; Ch: 1; SOT23-5; IB: 95nA
Input offset voltage: 6mV
Application: automotive industry
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Slew rate: 0.45V/μs
Input offset current: 25nA
Input bias current: 95nA
Mounting: SMT
Operating temperature: -40...125°C
Case: SOT23-5
Operating voltage: 2.7...6V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1.3MHz
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.58 грн |
29+ | 13.23 грн |
89+ | 10.24 грн |
243+ | 9.63 грн |
LMV321LICT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 2.7÷5.5V; Ch: 1; SC70-5
Input offset voltage: 1mV
Kind of package: reel; tape
Slew rate: 0.7V/μs
Mounting: SMT
Operating temperature: -40...125°C
Case: SC70-5
Operating voltage: 2.7...5.5V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1.3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 2.7÷5.5V; Ch: 1; SC70-5
Input offset voltage: 1mV
Kind of package: reel; tape
Slew rate: 0.7V/μs
Mounting: SMT
Operating temperature: -40...125°C
Case: SC70-5
Operating voltage: 2.7...5.5V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1.3MHz
на замовлення 4303 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
25+ | 15.44 грн |
28+ | 13.76 грн |
50+ | 12.69 грн |
88+ | 10.32 грн |
241+ | 9.71 грн |
1500+ | 9.40 грн |
LMV321LILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 2.7÷5.5V; Ch: 1; SOT23-5
Input offset voltage: 1mV
Kind of package: reel; tape
Slew rate: 0.7V/μs
Mounting: SMT
Operating temperature: -40...125°C
Case: SOT23-5
Operating voltage: 2.7...5.5V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1.3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 2.7÷5.5V; Ch: 1; SOT23-5
Input offset voltage: 1mV
Kind of package: reel; tape
Slew rate: 0.7V/μs
Mounting: SMT
Operating temperature: -40...125°C
Case: SOT23-5
Operating voltage: 2.7...5.5V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1.3MHz
на замовлення 17650 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
26+ | 14.83 грн |
29+ | 13.46 грн |
78+ | 11.62 грн |
214+ | 10.93 грн |
250+ | 10.86 грн |
1000+ | 10.55 грн |
LMV321RILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷6V; Ch: 1; SOT23-5; reel,tape
Input offset voltage: 0.1mV
Kind of package: reel; tape
Slew rate: 0.35V/μs
Mounting: SMT
Operating temperature: -40...125°C
Case: SOT23-5
Operating voltage: 2.7...6V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷6V; Ch: 1; SOT23-5; reel,tape
Input offset voltage: 0.1mV
Kind of package: reel; tape
Slew rate: 0.35V/μs
Mounting: SMT
Operating temperature: -40...125°C
Case: SOT23-5
Operating voltage: 2.7...6V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1MHz
на замовлення 1443 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.63 грн |
13+ | 30.73 грн |
25+ | 28.13 грн |
77+ | 11.85 грн |
210+ | 11.16 грн |
LMV321RIYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷6V; Ch: 1; SOT23-5; reel,tape
Input offset voltage: 0.1mV
Kind of package: reel; tape
Slew rate: 0.35V/μs
Mounting: SMT
Operating temperature: -40...125°C
Case: SOT23-5
Operating voltage: 2.7...6V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷6V; Ch: 1; SOT23-5; reel,tape
Input offset voltage: 0.1mV
Kind of package: reel; tape
Slew rate: 0.35V/μs
Mounting: SMT
Operating temperature: -40...125°C
Case: SOT23-5
Operating voltage: 2.7...6V
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 1MHz
на замовлення 2968 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.40 грн |
80+ | 11.31 грн |
219+ | 10.70 грн |
MJE350 |
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Виробник: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: SOT32
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: SOT32
Mounting: THT
Kind of package: tube
на замовлення 1452 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.11 грн |
14+ | 28.74 грн |
50+ | 25.61 грн |
56+ | 16.13 грн |
153+ | 15.29 грн |
500+ | 15.06 грн |
STD4N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
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STF4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
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STP4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
STU4N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
STP15N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 56A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 56A
товару немає в наявності
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STD16N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2382 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 204.18 грн |
5+ | 166.66 грн |
7+ | 145.25 грн |
17+ | 137.61 грн |
STF16N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 12 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 226.41 грн |
3+ | 189.59 грн |
7+ | 145.25 грн |
STP16N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
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STP16N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 25W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 25W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 25W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 25W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STM32G071G8U6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN28
Supply voltage: 1.7...3.6V DC
Interface: I2C x2; I2S; SPI x2; USART x4
Kind of architecture: Cortex M0+
Memory: 36kB SRAM; 128kB FLASH
Family: STM32G0
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN28
Supply voltage: 1.7...3.6V DC
Interface: I2C x2; I2S; SPI x2; USART x4
Kind of architecture: Cortex M0+
Memory: 36kB SRAM; 128kB FLASH
Family: STM32G0
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STM32G071G8U6N |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN28
Supply voltage: 1.71...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Memory: 36kB SRAM; 64kB FLASH
Family: STM32G0
Number of 16bit timers: 10
Number of 8bit timers: 3
Number of 12bit A/D converters: 11
Number of 32bit timers: 1
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN28
Supply voltage: 1.71...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Memory: 36kB SRAM; 64kB FLASH
Family: STM32G0
Number of 16bit timers: 10
Number of 8bit timers: 3
Number of 12bit A/D converters: 11
Number of 32bit timers: 1
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
товару немає в наявності
В кошику
од. на суму грн.