Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (165603) > Сторінка 2756 з 2761
| Фото | Назва | Виробник | Інформація |
Доступність |
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| STGIB15CH60S-L | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: SLLIMM 2nd Case: SDIP2B-26L Output current: 15A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18/0...400V DC Frequency: 20kHz Power dissipation: 81W Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STGIB15CH60TS-E | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: SLLIMM 2nd Case: SDIP2B-26L Output current: 15A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18/0...400V DC Frequency: 20kHz Power dissipation: 81W Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STTH3002CW | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 180A; TO247-3; 17ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: TO247-3 Max. forward voltage: 0.75V Reverse recovery time: 17ns |
на замовлення 360 шт: термін постачання 21-30 дні (днів) |
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STTH3002CG | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 15Ax2; 17ns; D2PAK; Ufmax: 0.75V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: D2PAK Max. forward voltage: 0.75V Max. load current: 50A Reverse recovery time: 17ns |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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1.5KE68A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; DO201; Ammo Pack Type of diode: TVS Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 16.3A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
на замовлення 1507 шт: термін постачання 21-30 дні (днів) |
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BTA06-800TWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 6A; TO220ABIns; Igt: 5mA; logic level Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220ABIns Gate current: 5mA Features of semiconductor devices: logic level Mounting: THT Kind of package: tube |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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M48Z35Y-70PC1 | STMicroelectronics |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256bSRAM; 32kx8bit; 4.5÷5.5V; 70ns; PCDIP28; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256b SRAM Memory organisation: 32kx8bit Access time: 70ns Case: PCDIP28 Mounting: THT Kind of package: tube Operating temperature: 0...70°C Operating voltage: 4.5...5.5V |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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L6386ED013TR | STMicroelectronics |
Category: MOSFET/IGBT driversDescription: IC: driver; push-pull; SO14; 400mA; 580V; Ch: 2; 400kHz; Usup: 17V Kind of package: reel; tape Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver Topology: push-pull Case: SO14 Operating temperature: -40...125°C Output current: 0.4A Number of channels: 2 Supply voltage: 17V Output voltage: 580V Frequency: 400kHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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M24512-WMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: I2C Memory organisation: 64kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ13A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 15.2V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1890 шт: термін постачання 21-30 дні (днів) |
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VN5016AJTR-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 46A; PowerSSO12; 4.5÷36V; reel,tape Supply voltage: 4.5...36V Application: automotive industry Case: PowerSSO12 Type of integrated circuit: power switch Mounting: SMD Kind of integrated circuit: high-side Operating temperature: -40...150°C On-state resistance: 16mΩ Number of channels: 1 Output current: 46A Kind of package: reel; tape |
на замовлення 3384 шт: термін постачання 21-30 дні (днів) |
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VN330SP-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 1A; PowerSO10; 10÷36V Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Mounting: SMD Number of channels: 4 Case: PowerSO10 Supply voltage: 10...36V On-state resistance: 0.32Ω |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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VN5050AJTR-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 12A; PowerSSO12; 4.5÷36V; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 12A Mounting: SMD Number of channels: 1 Operating temperature: -40...150°C Case: PowerSSO12 Supply voltage: 4.5...36V Kind of package: reel; tape On-state resistance: 50mΩ Application: automotive industry |
на замовлення 1818 шт: термін постачання 21-30 дні (днів) |
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VN808-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 700mA; PowerSO36; 45V; tube Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Mounting: SMD Number of channels: 8 Case: PowerSO36 Supply voltage: 45V Kind of package: tube |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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1.5KE10A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 10V; 100A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 10µA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STF7N105K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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| STF5N95K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 4A; Idm: 16A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 4A Pulsed drain current: 16A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STF5N105K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 12A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 12.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STF5N95K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 12.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STI4N62K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK Type of transistor: N-MOSFET Technology: SuperMESH3™ Drain-source voltage: 620V Drain current: 2A Power dissipation: 70W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of channel: enhancement Version: ESD Polarisation: unipolar Kind of package: tube |
на замовлення 186 шт: термін постачання 21-30 дні (днів) |
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STD4N62K3 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Drain-source voltage: 620V Drain current: 2A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhancement Version: ESD Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STU4N62K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251 Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 620V Drain current: 3.8A Power dissipation: 70W Case: IPAK; TO251 Gate-source voltage: 30V On-state resistance: 2Ω Mounting: THT Gate charge: 22nC Kind of channel: enhancement |
на замовлення 1100 шт: термін постачання 21-30 дні (днів) |
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2STR2230 | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1.5A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Current gain: 70...560 |
на замовлення 933 шт: термін постачання 21-30 дні (днів) |
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STD4NK60Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 70W Case: IPAK On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 26nC Pulsed drain current: 16A |
на замовлення 318 шт: термін постачання 21-30 дні (днів) |
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| STB4NK60Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| TCPP01-M12 | STMicroelectronics |
Category: UnclassifiedDescription: TCPP01-M12 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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STP17NK40ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 400V Drain current: 9.4A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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STP19NF20 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W Type of transistor: N-MOSFET Technology: MESH OVERLAY™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.45A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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DALC208SC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD Type of diode: diode arrays Semiconductor structure: bidirectional Mounting: SMD Case: SOT23-6 Max. off-state voltage: 9V Kind of package: reel; tape Version: ESD Leakage current: 1µA Max. forward impulse current: 6A |
на замовлення 3598 шт: термін постачання 21-30 дні (днів) |
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STP5NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.16A Pulsed drain current: 20A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
на замовлення 170 шт: термін постачання 21-30 дні (днів) |
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SM6T33CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 11084 шт: термін постачання 21-30 дні (днів) |
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SM6T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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SM6T33CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 22695 шт: термін постачання 21-30 дні (днів) |
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SM6T36CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1519 шт: термін постачання 21-30 дні (днів) |
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SM6T24A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 18A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 936 шт: термін постачання 21-30 дні (днів) |
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SM6T200A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 4682 шт: термін постачання 21-30 дні (днів) |
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SM6T12CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 36A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1463 шт: термін постачання 21-30 дні (днів) |
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SM6T220A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 188V Breakdown voltage: 220V Max. forward impulse current: 2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 4793 шт: термін постачання 21-30 дні (днів) |
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SM6T36CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2175 шт: термін постачання 21-30 дні (днів) |
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| STP65N045M9 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A Type of transistor: N-MOSFET Technology: MDmesh™ M9 Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 170A Power dissipation: 245W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STP65N150M9 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A Type of transistor: N-MOSFET Technology: MDmesh™ M9 Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM2903WHYST | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape Type of integrated circuit: comparator Mounting: SMT Case: miniSO8 Operating temperature: -40...150°C Input offset voltage: 15mV Kind of package: reel; tape Input bias current: 0.4µA Input offset current: 150nA Kind of comparator: low-power Kind of output: open collector Number of comparators: 2 Operating voltage: 2...36V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSV912HYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 8MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 4.5V/μs Quiescent current: 1.1mA Operating temperature: -40...150°C Input offset voltage: 7.5mV Voltage supply range: 2.5...5.5V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 5nA Input offset current: 5nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32F413MHY6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Case: WLCSP81 Operating temperature: -40...85°C Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: reel; tape Kind of architecture: Cortex M4 Family: STM32F4 Supply voltage: 1.7...3.6V DC Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Number of 12bit A/D converters: 16 Number of inputs/outputs: 60 Memory: 320kB SRAM; 1.5MB FLASH Clock frequency: 100MHz Kind of core: 32-bit Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F423MHY3TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Case: WLCSP81 Operating temperature: -40...125°C Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: reel; tape Kind of architecture: Cortex M4 Family: STM32F4 Supply voltage: 1.7...3.6V DC Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Number of 12bit A/D converters: 16 Number of inputs/outputs: 60 Memory: 320kB SRAM; 1.5MB FLASH Clock frequency: 100MHz Kind of core: 32-bit Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG |
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В кошику од. на суму грн. | |||||||||||||||||||
| STM32F423MHY6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Case: WLCSP81 Operating temperature: -40...85°C Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: reel; tape Kind of architecture: Cortex M4 Family: STM32F4 Supply voltage: 1.7...3.6V DC Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Number of 12bit A/D converters: 16 Number of inputs/outputs: 60 Memory: 320kB SRAM; 1.5MB FLASH Clock frequency: 100MHz Kind of core: 32-bit Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
T1010H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature Kind of package: tube Mounting: SMD Case: D2PAK Type of thyristor: triac Gate current: 10mA Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| T1010H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature Kind of package: reel; tape Mounting: SMD Case: D2PAK Type of thyristor: triac Gate current: 10mA Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD85N10F7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 100V Drain current: 70A Power dissipation: 85W Case: DPAK Gate-source voltage: 20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 45nC Kind of channel: enhancement Application: automotive industry Electrical mounting: SMT |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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TMBYV10-60FILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 594 шт: термін постачання 21-30 дні (днів) |
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| STGB10NB40LZT4 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD Type of transistor: IGBT Collector-emitter voltage: 410V Collector current: 10A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: internally clamped Application: automotive industry Version: ESD |
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В кошику од. на суму грн. | |||||||||||||||||||
|
VNS14NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape Type of integrated circuit: power switch Output current: 12A Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 35mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
M95P32-IXMNT/E | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32Mb EEPROM Interface: SPI Memory organisation: 4Mx8bit Operating voltage: 1.6...3.6V Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| ST25R3920B-AQWT | STMicroelectronics |
Category: UnclassifiedDescription: ST25R3920B-AQWT |
на замовлення 11963 шт: термін постачання 21-30 дні (днів) |
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T1635H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Max. forward impulse current: 0.168kA Mounting: THT Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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T1635H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube Technology: Snubberless™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| T1635H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T1635H-6I | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220ABIns Max. forward impulse current: 0.168kA Mounting: THT Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T1635H-8G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T1635H-8G | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| STGIB15CH60S-L |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM 2nd
Case: SDIP2B-26L
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Power dissipation: 81W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM 2nd
Case: SDIP2B-26L
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Power dissipation: 81W
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
| STGIB15CH60TS-E |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM 2nd
Case: SDIP2B-26L
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Power dissipation: 81W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM 2nd
Case: SDIP2B-26L
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Power dissipation: 81W
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
| STTH3002CW |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 180A; TO247-3; 17ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO247-3
Max. forward voltage: 0.75V
Reverse recovery time: 17ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 180A; TO247-3; 17ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO247-3
Max. forward voltage: 0.75V
Reverse recovery time: 17ns
на замовлення 360 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 185.05 грн |
| 5+ | 125.33 грн |
| 10+ | 112.72 грн |
| STTH3002CG |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 17ns; D2PAK; Ufmax: 0.75V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: D2PAK
Max. forward voltage: 0.75V
Max. load current: 50A
Reverse recovery time: 17ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 17ns; D2PAK; Ufmax: 0.75V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: D2PAK
Max. forward voltage: 0.75V
Max. load current: 50A
Reverse recovery time: 17ns
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.53 грн |
| 10+ | 116.66 грн |
| 1.5KE68A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 16.3A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 16.3A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
на замовлення 1507 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.41 грн |
| 15+ | 26.80 грн |
| 16+ | 24.75 грн |
| 50+ | 22.07 грн |
| 100+ | 20.97 грн |
| 250+ | 19.47 грн |
| 500+ | 18.37 грн |
| 600+ | 18.05 грн |
| BTA06-800TWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 6A; TO220ABIns; Igt: 5mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220ABIns
Gate current: 5mA
Features of semiconductor devices: logic level
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220ABIns; Igt: 5mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220ABIns
Gate current: 5mA
Features of semiconductor devices: logic level
Mounting: THT
Kind of package: tube
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 99.32 грн |
| 10+ | 57.62 грн |
| M48Z35Y-70PC1 |
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Виробник: STMicroelectronics
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256bSRAM; 32kx8bit; 4.5÷5.5V; 70ns; PCDIP28; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256b SRAM
Memory organisation: 32kx8bit
Access time: 70ns
Case: PCDIP28
Mounting: THT
Kind of package: tube
Operating temperature: 0...70°C
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256bSRAM; 32kx8bit; 4.5÷5.5V; 70ns; PCDIP28; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256b SRAM
Memory organisation: 32kx8bit
Access time: 70ns
Case: PCDIP28
Mounting: THT
Kind of package: tube
Operating temperature: 0...70°C
Operating voltage: 4.5...5.5V
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2165.42 грн |
| L6386ED013TR |
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Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO14; 400mA; 580V; Ch: 2; 400kHz; Usup: 17V
Kind of package: reel; tape
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Topology: push-pull
Case: SO14
Operating temperature: -40...125°C
Output current: 0.4A
Number of channels: 2
Supply voltage: 17V
Output voltage: 580V
Frequency: 400kHz
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO14; 400mA; 580V; Ch: 2; 400kHz; Usup: 17V
Kind of package: reel; tape
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Topology: push-pull
Case: SO14
Operating temperature: -40...125°C
Output current: 0.4A
Number of channels: 2
Supply voltage: 17V
Output voltage: 580V
Frequency: 400kHz
товару немає в наявності
В кошику
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| M24512-WMN6P | ![]() |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ13A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 16.98 грн |
| 31+ | 12.93 грн |
| 33+ | 12.14 грн |
| 50+ | 10.48 грн |
| 100+ | 9.77 грн |
| 500+ | 8.36 грн |
| 1000+ | 7.80 грн |
| 1200+ | 7.65 грн |
| VN5016AJTR-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 46A; PowerSSO12; 4.5÷36V; reel,tape
Supply voltage: 4.5...36V
Application: automotive industry
Case: PowerSSO12
Type of integrated circuit: power switch
Mounting: SMD
Kind of integrated circuit: high-side
Operating temperature: -40...150°C
On-state resistance: 16mΩ
Number of channels: 1
Output current: 46A
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 46A; PowerSSO12; 4.5÷36V; reel,tape
Supply voltage: 4.5...36V
Application: automotive industry
Case: PowerSSO12
Type of integrated circuit: power switch
Mounting: SMD
Kind of integrated circuit: high-side
Operating temperature: -40...150°C
On-state resistance: 16mΩ
Number of channels: 1
Output current: 46A
Kind of package: reel; tape
на замовлення 3384 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 183.35 грн |
| 10+ | 134.79 грн |
| 25+ | 122.17 грн |
| 50+ | 118.23 грн |
| VN330SP-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 1A; PowerSO10; 10÷36V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Mounting: SMD
Number of channels: 4
Case: PowerSO10
Supply voltage: 10...36V
On-state resistance: 0.32Ω
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 1A; PowerSO10; 10÷36V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Mounting: SMD
Number of channels: 4
Case: PowerSO10
Supply voltage: 10...36V
On-state resistance: 0.32Ω
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 432.91 грн |
| VN5050AJTR-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 12A; PowerSSO12; 4.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 12A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
Application: automotive industry
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 12A; PowerSSO12; 4.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 12A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
Application: automotive industry
на замовлення 1818 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 136.66 грн |
| 10+ | 94.59 грн |
| 25+ | 85.92 грн |
| 50+ | 81.97 грн |
| VN808-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 700mA; PowerSO36; 45V; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 8
Case: PowerSO36
Supply voltage: 45V
Kind of package: tube
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 700mA; PowerSO36; 45V; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 8
Case: PowerSO36
Supply voltage: 45V
Kind of package: tube
на замовлення 134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 518.65 грн |
| 1.5KE10A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 10V; 100A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 10V; 100A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
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| STF7N105K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 183.35 грн |
| STF5N95K3 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 4A; Idm: 16A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 4A; Idm: 16A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| STF5N105K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 12A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 12A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| STF5N95K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| STI4N62K3 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: tube
на замовлення 186 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.80 грн |
| 20+ | 19.94 грн |
| 23+ | 17.66 грн |
| 50+ | 15.76 грн |
| STD4N62K3 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| STU4N62K3 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 620V
Drain current: 3.8A
Power dissipation: 70W
Case: IPAK; TO251
Gate-source voltage: 30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 22nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 620V
Drain current: 3.8A
Power dissipation: 70W
Case: IPAK; TO251
Gate-source voltage: 30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 22nC
Kind of channel: enhancement
на замовлення 1100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 36.92 грн |
| 2STR2230 |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 70...560
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 70...560
на замовлення 933 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.50 грн |
| 17+ | 24.59 грн |
| 50+ | 16.79 грн |
| 100+ | 14.19 грн |
| 500+ | 10.09 грн |
| STD4NK60Z-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: IPAK
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Pulsed drain current: 16A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: IPAK
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Pulsed drain current: 16A
на замовлення 318 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.87 грн |
| 12+ | 35.55 грн |
| 75+ | 26.56 грн |
| 150+ | 24.04 грн |
| STB4NK60Z-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 42.36 грн |
| TCPP01-M12 |
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на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 41.68 грн |
| STP17NK40ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.54 грн |
| 10+ | 201.00 грн |
| STP19NF20 | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W
Type of transistor: N-MOSFET
Technology: MESH OVERLAY™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W
Type of transistor: N-MOSFET
Technology: MESH OVERLAY™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 77 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.00 грн |
| 10+ | 67.00 грн |
| DALC208SC6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD
Type of diode: diode arrays
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 9V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 6A
Category: Protection diodes - arrays
Description: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD
Type of diode: diode arrays
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 9V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 6A
на замовлення 3598 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.31 грн |
| 20+ | 20.49 грн |
| 22+ | 18.13 грн |
| 50+ | 13.08 грн |
| 100+ | 11.43 грн |
| 250+ | 9.54 грн |
| 500+ | 8.51 грн |
| 1000+ | 7.57 грн |
| 1500+ | 7.09 грн |
| STP5NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 170 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.63 грн |
| 10+ | 44.61 грн |
| 50+ | 41.30 грн |
| 100+ | 39.41 грн |
| SM6T33CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 11084 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.86 грн |
| 19+ | 21.75 грн |
| 21+ | 19.39 грн |
| 50+ | 14.66 грн |
| 100+ | 12.93 грн |
| 250+ | 10.88 грн |
| 500+ | 9.38 грн |
| 1000+ | 8.12 грн |
| 2500+ | 6.54 грн |
| SM6T36A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.13 грн |
| 30+ | 13.16 грн |
| 33+ | 12.30 грн |
| 50+ | 11.51 грн |
| 100+ | 10.72 грн |
| 250+ | 9.85 грн |
| 500+ | 9.14 грн |
| SM6T33CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 22695 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.47 грн |
| 21+ | 19.31 грн |
| 100+ | 16.00 грн |
| 250+ | 14.90 грн |
| 500+ | 14.11 грн |
| 1000+ | 13.32 грн |
| 2500+ | 12.38 грн |
| 5000+ | 11.82 грн |
| 7500+ | 11.43 грн |
| SM6T36CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1519 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.95 грн |
| 15+ | 26.64 грн |
| 21+ | 19.55 грн |
| 50+ | 17.58 грн |
| 100+ | 16.00 грн |
| 500+ | 12.45 грн |
| 1000+ | 11.43 грн |
| 1500+ | 8.91 грн |
| SM6T24A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 936 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 35.65 грн |
| 17+ | 24.59 грн |
| 50+ | 16.95 грн |
| 100+ | 14.42 грн |
| 250+ | 11.82 грн |
| 500+ | 10.17 грн |
| SM6T200A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 4682 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 35.65 грн |
| 15+ | 27.59 грн |
| 16+ | 24.99 грн |
| 50+ | 19.39 грн |
| 100+ | 17.18 грн |
| 250+ | 14.50 грн |
| 500+ | 12.77 грн |
| 1000+ | 11.11 грн |
| 2500+ | 9.14 грн |
| SM6T12CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1463 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.47 грн |
| 22+ | 18.76 грн |
| 24+ | 16.87 грн |
| 50+ | 13.01 грн |
| 100+ | 11.51 грн |
| 500+ | 8.75 грн |
| 1000+ | 7.80 грн |
| SM6T220A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 4793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.47 грн |
| 21+ | 19.23 грн |
| 23+ | 17.50 грн |
| 50+ | 14.03 грн |
| 100+ | 12.85 грн |
| 250+ | 11.51 грн |
| 500+ | 10.72 грн |
| 1000+ | 10.01 грн |
| 2500+ | 9.14 грн |
| SM6T36CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2175 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.35 грн |
| 13+ | 31.06 грн |
| 14+ | 28.53 грн |
| 25+ | 24.51 грн |
| 100+ | 19.86 грн |
| 250+ | 18.37 грн |
| STP65N045M9 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 170A
Power dissipation: 245W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 170A
Power dissipation: 245W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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| STP65N150M9 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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| LM2903WHYST |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape
Type of integrated circuit: comparator
Mounting: SMT
Case: miniSO8
Operating temperature: -40...150°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input bias current: 0.4µA
Input offset current: 150nA
Kind of comparator: low-power
Kind of output: open collector
Number of comparators: 2
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape
Type of integrated circuit: comparator
Mounting: SMT
Case: miniSO8
Operating temperature: -40...150°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input bias current: 0.4µA
Input offset current: 150nA
Kind of comparator: low-power
Kind of output: open collector
Number of comparators: 2
Operating voltage: 2...36V
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| TSV912HYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 4.5V/μs
Quiescent current: 1.1mA
Operating temperature: -40...150°C
Input offset voltage: 7.5mV
Voltage supply range: 2.5...5.5V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 5nA
Input offset current: 5nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 4.5V/μs
Quiescent current: 1.1mA
Operating temperature: -40...150°C
Input offset voltage: 7.5mV
Voltage supply range: 2.5...5.5V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 5nA
Input offset current: 5nA
Application: automotive industry
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| STM32F413MHY6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: WLCSP81
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Kind of architecture: Cortex M4
Family: STM32F4
Supply voltage: 1.7...3.6V DC
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Number of 12bit A/D converters: 16
Number of inputs/outputs: 60
Memory: 320kB SRAM; 1.5MB FLASH
Clock frequency: 100MHz
Kind of core: 32-bit
Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: WLCSP81
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Kind of architecture: Cortex M4
Family: STM32F4
Supply voltage: 1.7...3.6V DC
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Number of 12bit A/D converters: 16
Number of inputs/outputs: 60
Memory: 320kB SRAM; 1.5MB FLASH
Clock frequency: 100MHz
Kind of core: 32-bit
Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
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| STM32F423MHY3TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: WLCSP81
Operating temperature: -40...125°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Kind of architecture: Cortex M4
Family: STM32F4
Supply voltage: 1.7...3.6V DC
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Number of 12bit A/D converters: 16
Number of inputs/outputs: 60
Memory: 320kB SRAM; 1.5MB FLASH
Clock frequency: 100MHz
Kind of core: 32-bit
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: WLCSP81
Operating temperature: -40...125°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Kind of architecture: Cortex M4
Family: STM32F4
Supply voltage: 1.7...3.6V DC
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Number of 12bit A/D converters: 16
Number of inputs/outputs: 60
Memory: 320kB SRAM; 1.5MB FLASH
Clock frequency: 100MHz
Kind of core: 32-bit
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
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| STM32F423MHY6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: WLCSP81
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Kind of architecture: Cortex M4
Family: STM32F4
Supply voltage: 1.7...3.6V DC
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Number of 12bit A/D converters: 16
Number of inputs/outputs: 60
Memory: 320kB SRAM; 1.5MB FLASH
Clock frequency: 100MHz
Kind of core: 32-bit
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: WLCSP81
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Kind of architecture: Cortex M4
Family: STM32F4
Supply voltage: 1.7...3.6V DC
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Number of 12bit A/D converters: 16
Number of inputs/outputs: 60
Memory: 320kB SRAM; 1.5MB FLASH
Clock frequency: 100MHz
Kind of core: 32-bit
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
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| T1010H-6G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
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| T1010H-6G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
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| STD85N10F7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 70.45 грн |
| TMBYV10-60FILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 594 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.22 грн |
| 24+ | 17.03 грн |
| 26+ | 15.53 грн |
| 100+ | 10.80 грн |
| 250+ | 8.91 грн |
| 500+ | 7.41 грн |
| STGB10NB40LZT4 |
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Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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| VNS14NV04PTR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Output current: 12A
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 35mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Output current: 12A
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 35mΩ
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| M95P32-IXMNT/E |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32Mb EEPROM
Interface: SPI
Memory organisation: 4Mx8bit
Operating voltage: 1.6...3.6V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32Mb EEPROM
Interface: SPI
Memory organisation: 4Mx8bit
Operating voltage: 1.6...3.6V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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| ST25R3920B-AQWT |
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на замовлення 11963 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 328.51 грн |
| T1635H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.11 грн |
| 10+ | 77.25 грн |
| 50+ | 67.79 грн |
| T1635H-6G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Technology: Snubberless™
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В кошику
од. на суму грн.
| T1635H-6G-TR |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| T1635H-6I |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220ABIns
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220ABIns
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| T1635H-8G-TR |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| T1635H-8G |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.























