Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (132566) > Сторінка 2208 з 2210

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
Ciphering: AES128; AES192; AES256; HMAC; MD5; SHA; TDES; TRNG

Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 72A; 125W
Case: PowerFLAT 8x8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 72A
Power dissipation: 125W
Gate charge: 29nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 0.21Ω

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 38W
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 38W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 1.75Ω

Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Max. load current: 10A
Max. forward impulse current: 75A
Kind of package: reel; tape

Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.89V
Max. load current: 15A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 4mA

Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 100V; 30A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Case: PowerFLAT 5x6
Max. forward voltage: 0.84V
Max. load current: 45A
Max. forward impulse current: 250A
Kind of package: reel; tape

Виробник: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 270V; SMB; SMD; 100A; bidirectional; Trisil™
Type of thyristor: TSS
Max. off-state voltage: 270V
Case: SMB
Mounting: SMD
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Technology: Trisil™
Breakover voltage: 335V
Manufacturer series: LC
Application: telecommunication
Kind of package: reel; tape

Виробник: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 200V; SMB; SMD; 100A; bidirectional; Trisil™
Type of thyristor: TSS
Max. off-state voltage: 200V
Case: SMB
Mounting: SMD
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Technology: Trisil™
Breakover voltage: 250V
Manufacturer series: LC
Application: telecommunication
Kind of package: reel; tape

Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.5A; 160W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.5A
Power: 160W
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP64; 1.65÷3.6VDC; D/A 12bit: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP64
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI x2; USART x2
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 2kB EEPROM; 4kB RAM; 64kB FLASH
Number of 12bit A/D converters: 28
Number of 16bit timers: 4
Number of 8bit timers: 1
Number of PWM channels: 5
Family: STM8L
Kind of core: 8-bit
Number of 12bit D/A converters: 2

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 11A; 160W; D2PAK,TO263
Power dissipation: 160W
Gate charge: 30nC
Polarisation: unipolar
Technology: MDmesh™
Drain current: 11A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: D2PAK; TO263
On-state resistance: 0.45Ω
Mounting: SMD

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK
Pulsed drain current: 44A
Power dissipation: 150W
Polarisation: unipolar
Technology: SuperMesh™
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 0.4Ω
Mounting: SMD

Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2-wire,I2C; 8kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: 2-wire; I2C
Memory organisation: 8kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C

Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 71A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement

Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Leakage current: 20mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm

Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220FP; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220FP
Max. forward voltage: 0.8V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Leakage current: 20mA
Kind of package: tube

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 2.5A
Power dissipation: 31.7W
Case: PowerSO10RF
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 2.5A
Power dissipation: 31.7W
Case: PowerSO10RF
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement

Виробник: STMicroelectronics
Category: Integrated circuits - others
Description: IC: supervisor circuit; supply voltage monitor; 2.2÷4.5VDC; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: supply voltage monitor
Supply voltage: 2.2...4.5V DC
Case: flip chip12
Interface: GPIO
Mounting: SMD
Number of channels: 1
Integrated circuit features: USB charger detection

Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Type of diode: TVS array
Version: ESD
Mounting: SMD

Виробник: STMicroelectronics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: ACEPACK™1
Application: Inverter; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Power dissipation: 250W

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; LPUART; SPI x4; USART x4; USB
Kind of architecture: Cortex M0+
Memory: 6kB EEPROM; 20kB SRAM; 192kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Kind of package: in-tray
Number of 16bit timers: 7
Number of 12bit A/D converters: 16
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 2

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 23
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; LPUART; SPI x4; USART x3; USB
Kind of architecture: Cortex M0+
Memory: 6kB EEPROM; 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Kind of package: in-tray
Number of 16bit timers: 7
Number of 12bit A/D converters: 16
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 2

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 23
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; LPUART; SPI x4; USART x4; USB
Kind of architecture: Cortex M0+
Memory: 6kB EEPROM; 20kB SRAM; 192kB FLASH
Operating temperature: -40...105°C
Family: STM32L0
Kind of core: 32-bit
Kind of package: in-tray
Number of 16bit timers: 7
Number of 12bit A/D converters: 16
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 2

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 23
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; LPUART; SPI x4; USART x3; USB
Kind of architecture: Cortex M0+
Memory: 6kB EEPROM; 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Number of 16bit timers: 7
Number of 12bit A/D converters: 16
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 2
Kind of package: reel; tape

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 23
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; LPUART; SPI x4; USART x3; USB
Kind of architecture: Cortex M0+
Memory: 6kB EEPROM; 20kB SRAM; 128kB FLASH
Operating temperature: -40...105°C
Family: STM32L0
Kind of core: 32-bit
Number of 16bit timers: 7
Number of 12bit A/D converters: 16
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 2
Kind of package: in-tray

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 23
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; LPUART; SPI x4; USART x3; USB
Kind of architecture: Cortex M0+
Memory: 6kB EEPROM; 20kB SRAM; 128kB FLASH
Operating temperature: -40...105°C
Family: STM32L0
Kind of core: 32-bit
Number of 16bit timers: 7
Number of 12bit A/D converters: 16
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 2
Kind of package: reel; tape

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Interface: I2C x3; LPUART; SPI x6; USART x4; USB
Kind of architecture: Cortex M0+
Memory: 3kB EEPROM; 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Number of 16bit timers: 7
Number of 12bit A/D converters: 16
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 2
Kind of package: in-tray

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFBGA100; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: UFBGA100
Supply voltage: 1.8...3.6V DC
Interface: I2C x3; LPUART; SPI x6; USART x4; USB
Kind of architecture: Cortex M0+
Memory: 6kB EEPROM; 20kB SRAM; 192kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Number of 16bit timers: 7
Number of 12bit A/D converters: 16
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 2
Kind of package: in-tray

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Interface: I2C x3; LPUART; SPI x6; USART x4; USB
Kind of architecture: Cortex M0+
Memory: 6kB EEPROM; 20kB SRAM; 192kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Number of 16bit timers: 7
Number of 12bit A/D converters: 16
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Number of 12bit D/A converters: 2
Kind of package: in-tray

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry

Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; 3A; HSOP8; SMD; 275kHz; -25÷125°C
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Output current: 3A
Case: HSOP8
Mounting: SMD
Frequency: 275kHz
Operating temperature: -25...125°C
Operating voltage: 2.9...18V DC

Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; synchronous; Uin: 2.5÷5.5V; Uout: 1.8V; TSOT23-5; buck; ST1
Type of integrated circuit: PMIC
Kind of integrated circuit: synchronous
Input voltage: 2.5...5.5V
Output voltage: 1.8V
Output current: 0.7A
Case: TSOT23-5
Mounting: SMD
Frequency: 1.7MHz
Topology: buck
Manufacturer series: ST1
Operating temperature: -40...125°C

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 36MHz; LQFP144; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 36MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: LQFP144
Supply voltage: 2...3.6V DC
Interface: I2C x2; SPI x3
Kind of architecture: Cortex M3
Memory: 48kB SRAM; 512kB FLASH
Number of 16bit timers: 6
Family: STM32F1
Kind of core: 32-bit

Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 31W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 31W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode

Виробник: STMicroelectronics
Category: Integrated circuits - others
Description: IC: PMIC; electronic power breaker; PowerSO8; reel,tape; 10.5÷18V
Type of integrated circuit: PMIC
Kind of integrated circuit: electronic power breaker
Case: PowerSO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.5A
Input voltage: 10.5...18V
Integrated circuit features: programmable

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN32; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 30
Case: UFQFPN32
Supply voltage: 1.7...3.6V DC
Interface: I2C x2; LPUART; SPI x2; USART x2
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 18
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32G0
Kind of package: in-tray
Kind of core: 32-bit

Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN32; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 30
Case: UFQFPN32
Supply voltage: 1.7...3.6V DC
Interface: I2C x2; LPUART; SPI x2; USART x2
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 18
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.9A; Idm: 16A; 3.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.9A
Pulsed drain current: 16A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement

Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 16A; 10A; Igt: 25mA; TO220AB; THT
Mounting: THT
Max. forward impulse current: 190A
Gate current: 25mA
Max. off-state voltage: 0.8kV
Load current: 10A
Max. load current: 16A
Kind of package: tube
Case: TO220AB
Type of thyristor: standard

Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 80A; 50A; Igt: 50mA; TO247; THT
Max. forward impulse current: 670A
Gate current: 50mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Load current: 50A
Max. load current: 80A
Kind of package: tube
Case: TO247
Type of thyristor: standard
Mounting: THT

Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: VIPer35LD; 50÷60Hz; 11.4÷12.6V; 0.03÷1A
Power: 16W
Connection: screw
Output voltage: 11.4...12.6V
Additional functions: AC/DC converter
Frequency: 50...60Hz
Operating voltage: 175...275V AC
Output voltage 2: 14.25...15.75V DC
Output voltage 3: 4.9...5.1V DC
Topology: flyback
Type of development kit: evaluation
Components: VIPer35LD
Output current 2: 30...200mA
Output current: 0.03...1A
Kit contents: prototype board
Output current 3: 20...200mA

Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: L7986A; 0.25÷1MHz; 4.5÷38VDC; 0.6÷38V
Output voltage: 0.6...38V
Output current: 3A
Frequency: 0.25...1MHz
Operating voltage: 4.5...38V DC
Type of development kit: evaluation
Components: L7986A
Protection: anti-overload OPP; overheating OTP; short circuit protection SCP
Kit contents: prototype board
Application: power supply
Connection: pin strips

Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4.5÷38VDC; Uout: 0.6÷38VDC; 3A; HSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...38V DC
Output voltage: 0.6...38V DC
Output current: 3A
Case: HSOP8
Mounting: SMD
Frequency: 0.25...1MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape

Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 700kHz; Ch: 1; 2.7÷5.5VDC; TSSOP8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 0.7MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Input offset voltage: 1.1mV
Kind of package: reel; tape
Input bias current: 15µA
Kind of integrated circuit: current sense

Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 15A; 175W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 15A
Power: 175W
Case: TO3
Mounting: THT

Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 45W; I2C,I2S; 3.3÷18VDC; Ch: 1
Type of integrated circuit: audio amplifier
Interface: I2C; I2S
Mounting: SMD
Case: PowerSSO36
Application: automotive industry
Amplifier class: D
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 3.3...18V DC
Output power: 45W

Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 38.6V; 11.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 11.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA6J

Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 2A; unidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 22V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA6J

Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 2A; bidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 22V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA6J

Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 117V; 3.8A; bidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 117V
Max. forward impulse current: 3.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA6J

Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA6J

Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 40A; bidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Manufacturer series: SMA6J

Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 2.4A; unidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA6J

Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30.4V; 14.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA6J

Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 23.4V; 19.4A; bidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.4V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA6J

Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM nano
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM nano
Case: NDIP-26L
Output current: 2A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...400V DC
Frequency: 25kHz
Power dissipation: 10.4W
Collector-emitter voltage: 500V