Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170178) > Сторінка 2759 з 2837
Фото | Назва | Виробник | Інформація |
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STD3NK80ZT4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1884 шт: термін постачання 21-30 дні (днів) |
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STTH12R06G | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 100A Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: D2PAK Max. off-state voltage: 0.6kV Max. forward voltage: 1.4V Load current: 12A |
на замовлення 176 шт: термін постачання 21-30 дні (днів) |
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STGP7NC60HD | STMicroelectronics |
![]() ![]() Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 14A Pulsed collector current: 50A Type of transistor: IGBT Power dissipation: 80W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 48nC Mounting: THT Case: TO220AB |
на замовлення 338 шт: термін постачання 21-30 дні (днів) |
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STTH60W03CW | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns Semiconductor structure: common cathode; double Max. off-state voltage: 300V Load current: 30A x2 Case: TO247-3 Max. forward voltage: 0.94V Max. forward impulse current: 280A Reverse recovery time: 25ns Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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SM6T27CA | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape Case: SMB Tolerance: ±5% Max. off-state voltage: 23.1V Semiconductor structure: bidirectional Max. forward impulse current: 16A Breakdown voltage: 27V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Mounting: SMD |
на замовлення 6089 шт: термін постачання 21-30 дні (днів) |
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STM32F072RBT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SPI x2; UART x4; USB Kind of architecture: Cortex M0 Memory: 16kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 16bit timers: 8 Number of 32bit timers: 1 Family: STM32F0 |
на замовлення 626 шт: термін постачання 21-30 дні (днів) |
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STP3NK90ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD Drain-source voltage: 900V Drain current: 1.89A On-state resistance: 4.8Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: TO220FP |
на замовлення 392 шт: термін постачання 21-30 дні (днів) |
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SM6T30A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 9659 шт: термін постачання 21-30 дні (днів) |
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STN3NF06L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD Case: SOT223 Mounting: SMD Drain-source voltage: 60V Drain current: 4A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 3.3W Polarisation: unipolar Kind of package: reel; tape Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±16V |
на замовлення 5101 шт: термін постачання 21-30 дні (днів) |
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STPS0520Z | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape Case: SOD123 Max. off-state voltage: 20V Max. load current: 2A Max. forward voltage: 0.32V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD |
на замовлення 7232 шт: термін постачання 21-30 дні (днів) |
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STTH6002CW | STMicroelectronics |
![]() ![]() Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TO247-3; 22ns Semiconductor structure: common cathode; double Max. off-state voltage: 200V Load current: 30A x2 Case: TO247-3 Max. forward voltage: 0.75V Max. forward impulse current: 330A Max. load current: 50A Reverse recovery time: 22ns Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching |
на замовлення 160 шт: термін постачання 21-30 дні (днів) |
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STPS20H100CG | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube Mounting: SMD Max. off-state voltage: 100V Max. load current: 30A Max. forward voltage: 0.59V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 250A Kind of package: tube Type of diode: Schottky rectifying Case: D2PAK |
на замовлення 1239 шт: термін постачання 21-30 дні (днів) |
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STW8NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 140W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW4N150 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247 Case: TO247 Drain-source voltage: 1.5kV Drain current: 2.5A On-state resistance: 7Ω Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Kind of package: tube Technology: PowerMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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ST490ABDR | STMicroelectronics |
![]() Description: IC: interface; transceiver; half duplex,RS422,RS485; 25Mbps; SO8 Case: SO8 Supply voltage: 4.5...5.5V DC Type of integrated circuit: interface Interface: half duplex; RS422; RS485 Data transfer rate: 25Mbps Number of receivers: 1 Number of transmitters: 1 Kind of integrated circuit: transceiver Mounting: SMD |
на замовлення 3630 шт: термін постачання 21-30 дні (днів) |
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STE48NM50 | STMicroelectronics |
![]() Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W Drain-source voltage: 500V Drain current: 30A On-state resistance: 80mΩ Power dissipation: 450W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Gate-source voltage: ±30V Pulsed drain current: 192A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STN4NF20L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 200V Drain current: 1A Power dissipation: 3.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 620 шт: термін постачання 21-30 дні (днів) |
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STP40NF20 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3 Kind of package: tube Technology: STripFET™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 Drain-source voltage: 200V Drain current: 25A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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STPS140A | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 60A Kind of package: reel; tape Max. load current: 7A |
на замовлення 15536 шт: термін постачання 21-30 дні (днів) |
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STW45NM60 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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STB42N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP40NF10L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3 Kind of package: tube Technology: STripFET™ Kind of channel: enhancement Gate-source voltage: ±17V Mounting: THT Case: TO220-3 Drain-source voltage: 100V Drain current: 25A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar |
на замовлення 154 шт: термін постачання 21-30 дні (днів) |
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STP42N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ V |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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STW45N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 210W Version: ESD Gate-source voltage: ±20V Drain current: 22A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW48NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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SMBJ48A-TR | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 8.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2234 шт: термін постачання 21-30 дні (днів) |
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ST1S40IPHR | STMicroelectronics |
![]() Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 4...18V DC Case: HSOP8 Mounting: SMD Topology: buck Number of channels: 1 Output current: 3A Frequency: 850kHz Output voltage: 0.8...18V DC |
на замовлення 1891 шт: термін постачання 21-30 дні (днів) |
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STD4NK80ZT4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD Power dissipation: 80W Kind of package: reel; tape Case: DPAK Mounting: SMD Drain-source voltage: 800V Drain current: 1.89A On-state resistance: 3.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V |
на замовлення 2477 шт: термін постачання 21-30 дні (днів) |
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STP14N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.4A Pulsed drain current: 48A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 445mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STP45N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 95A Power dissipation: 210W Case: TO220-3 On-state resistance: 99mΩ Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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STE145N65M5 | STMicroelectronics |
![]() Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W Drain-source voltage: 650V Drain current: 90A On-state resistance: 12mΩ Power dissipation: 679W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Gate-source voltage: ±25V Pulsed drain current: 572A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGW40V60DF | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 80A Power dissipation: 283W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 226nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 432 шт: термін постачання 21-30 дні (днів) |
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STPS0540Z | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.4V Max. load current: 2A Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 6603 шт: термін постачання 21-30 дні (днів) |
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STPS1L40A | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 60A Kind of package: reel; tape Max. load current: 8A |
на замовлення 16142 шт: термін постачання 21-30 дні (днів) |
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STPS40150CG | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube Max. load current: 40A Max. forward voltage: 0.92V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 250A Kind of package: tube Type of diode: Schottky rectifying Mounting: SMD Case: D2PAK Max. off-state voltage: 150V |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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STPS40150CT | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V Max. forward voltage: 0.69V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 250A Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Mounting: THT Case: TO220AB Max. off-state voltage: 150V |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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STY145N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: MAX247 On-state resistance: 15mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 625W Version: ESD Gate-source voltage: ±25V Drain current: 87A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAJ24CA-TR | STMicroelectronics |
![]() Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 46A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 1µA |
на замовлення 3984 шт: термін постачання 21-30 дні (днів) |
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STP45N60DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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STPS1545CT | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V Max. off-state voltage: 45V Max. load current: 20A Max. forward voltage: 0.5V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 150A Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Mounting: THT Case: TO220AB |
на замовлення 193 шт: термін постачання 21-30 дні (днів) |
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STPS1545FP | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V Max. off-state voltage: 45V Max. load current: 30A Max. forward voltage: 0.57V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 200A Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO220FP-2 |
на замовлення 244 шт: термін постачання 21-30 дні (днів) |
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STPS24045TV | STMicroelectronics |
![]() Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw Max. forward impulse current: 1.15kA Max. off-state voltage: 45V Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Max. load current: 240A Type of semiconductor module: diode Max. forward voltage: 0.68V Load current: 120A x2 Semiconductor structure: double independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPS41H100CG | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; tube Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. load current: 40A Max. forward impulse current: 220A Kind of package: tube |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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STW45N60DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 85mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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STGIPS14K60 | STMicroelectronics |
![]() Description: IC: driver; IGBT three-phase bridge; SLLIMM™; SDIP-25L; 14A; Ch: 6 Mounting: THT Case: SDIP-25L Operating temperature: -40...125°C Output current: 14A Type of integrated circuit: driver Number of channels: 6 Power dissipation: 42W Technology: SLLIMM™ Kind of integrated circuit: 3-phase motor controller; IPM Operating voltage: 13.5...18/0...400V DC Topology: IGBT three-phase bridge Frequency: 20kHz Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STM32F417VGT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 168MHz; LQFP100; 1.8÷3.6VDC Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB Clock frequency: 168MHz Kind of architecture: Cortex M4 Family: STM32F4 Memory: 192kB SRAM; 1MB FLASH Mounting: SMD Operating temperature: -40...85°C Case: LQFP100 Supply voltage: 1.8...3.6V DC Type of integrated circuit: STM32 ARM microcontroller |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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STM32G473VBT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 86 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB FLASH; 128kB SRAM Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32G473VCT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 86 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32G473VEH6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; TFBGA100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 86 Case: TFBGA100 Supply voltage: 1.71...3.6V DC Interface: CAN-FD x3; I2C x4; I2S x4; SAI; SPI x4; UART x2; USART x3; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; RNG; RTC; watchdog Memory: 128kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32G473VET6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 86 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
STM32G474QET3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP128; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 107 Case: LQFP128 Supply voltage: 1.71...3.6V DC Interface: CAN FD; I2C x4; I2S x4; PWM; SAI; UART x2; USART x3; USB Kind of architecture: Cortex M4F Memory: 128kB SRAM; 512kB FLASH Operating temperature: -40...125°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STM32G474QET6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP128; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 107 Case: LQFP128 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STM32G474RBT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB FLASH; 128kB SRAM Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of comparators: 7 Number of 12bit D/A converters: 7 Number of 16bit timers: 11 Number of 32bit timers: 2 Family: STM32G4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STM32G474RCT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of comparators: 7 Number of 12bit D/A converters: 7 Number of 16bit timers: 11 Number of 32bit timers: 2 Family: STM32G4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STM32G474RET6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Number of 16bit timers: 11 Number of 32bit timers: 2 Family: STM32G4 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STM32G474VBT3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 86 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB FLASH; 128kB SRAM Operating temperature: -40...125°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32G474VCT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 86 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32G474VEH6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; TFBGA100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 86 Case: TFBGA100 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32G474VET6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 86 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN FD; I2C x4; I2S x4; PWM; SAI; UART x2; USART x3; USB Kind of architecture: Cortex M4F Memory: 128kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
STM32G483RET6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN-FD; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C Kind of architecture: Cortex M4F Memory: 128kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 5 Number of 12bit D/A converters: 7 Family: STM32G4 Number of 16bit timers: 11 Number of 32bit timers: 2 Number of comparators: 7 |
товару немає в наявності |
В кошику од. на суму грн. |
STD3NK80ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1884 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 132.55 грн |
10+ | 91.97 грн |
27+ | 33.94 грн |
73+ | 32.03 грн |
STTH12R06G |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 100A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 12A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 100A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 12A
на замовлення 176 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 89.74 грн |
10+ | 68.04 грн |
17+ | 52.57 грн |
47+ | 49.70 грн |
STGP7NC60HD | ![]() |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 80W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
Case: TO220AB
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 80W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
Case: TO220AB
на замовлення 338 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 111.14 грн |
10+ | 85.62 грн |
16+ | 59.63 грн |
42+ | 56.57 грн |
STTH60W03CW |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 300V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.94V
Max. forward impulse current: 280A
Reverse recovery time: 25ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 300V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.94V
Max. forward impulse current: 280A
Reverse recovery time: 25ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 411.65 грн |
SM6T27CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 23.1V
Semiconductor structure: bidirectional
Max. forward impulse current: 16A
Breakdown voltage: 27V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 23.1V
Semiconductor structure: bidirectional
Max. forward impulse current: 16A
Breakdown voltage: 27V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Mounting: SMD
на замовлення 6089 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.58 грн |
18+ | 21.33 грн |
50+ | 17.12 грн |
100+ | 15.37 грн |
149+ | 6.04 грн |
411+ | 5.66 грн |
STM32F072RBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32F0
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32F0
на замовлення 626 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 329.32 грн |
4+ | 242.34 грн |
10+ | 238.52 грн |
11+ | 229.35 грн |
25+ | 223.23 грн |
50+ | 220.17 грн |
STP3NK90ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Drain-source voltage: 900V
Drain current: 1.89A
On-state resistance: 4.8Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Drain-source voltage: 900V
Drain current: 1.89A
On-state resistance: 4.8Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220FP
на замовлення 392 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 71.63 грн |
7+ | 63.68 грн |
10+ | 58.10 грн |
25+ | 36.85 грн |
68+ | 34.86 грн |
SM6T30A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 9659 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
23+ | 16.74 грн |
50+ | 15.21 грн |
100+ | 14.53 грн |
137+ | 6.57 грн |
375+ | 6.19 грн |
STN3NF06L |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD
Case: SOT223
Mounting: SMD
Drain-source voltage: 60V
Drain current: 4A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD
Case: SOT223
Mounting: SMD
Drain-source voltage: 60V
Drain current: 4A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±16V
на замовлення 5101 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.80 грн |
10+ | 45.56 грн |
50+ | 38.45 грн |
56+ | 16.36 грн |
152+ | 15.52 грн |
STPS0520Z |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Case: SOD123
Max. off-state voltage: 20V
Max. load current: 2A
Max. forward voltage: 0.32V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Case: SOD123
Max. off-state voltage: 20V
Max. load current: 2A
Max. forward voltage: 0.32V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
на замовлення 7232 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.29 грн |
38+ | 10.32 грн |
53+ | 7.23 грн |
100+ | 6.18 грн |
370+ | 2.42 грн |
1017+ | 2.29 грн |
STTH6002CW | ![]() |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TO247-3; 22ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.75V
Max. forward impulse current: 330A
Max. load current: 50A
Reverse recovery time: 22ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TO247-3; 22ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.75V
Max. forward impulse current: 330A
Max. load current: 50A
Reverse recovery time: 22ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
на замовлення 160 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 303.80 грн |
5+ | 215.59 грн |
12+ | 203.35 грн |
90+ | 195.71 грн |
STPS20H100CG |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube
Mounting: SMD
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Case: D2PAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube
Mounting: SMD
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Case: D2PAK
на замовлення 1239 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.16 грн |
19+ | 47.93 грн |
52+ | 45.33 грн |
500+ | 43.58 грн |
STW8NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW4N150 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Case: TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Case: TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
на замовлення 87 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 538.44 грн |
3+ | 347.08 грн |
8+ | 328.73 грн |
25+ | 315.73 грн |
ST490ABDR |
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Виробник: STMicroelectronics
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; half duplex,RS422,RS485; 25Mbps; SO8
Case: SO8
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: interface
Interface: half duplex; RS422; RS485
Data transfer rate: 25Mbps
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Mounting: SMD
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; half duplex,RS422,RS485; 25Mbps; SO8
Case: SO8
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: interface
Interface: half duplex; RS422; RS485
Data transfer rate: 25Mbps
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Mounting: SMD
на замовлення 3630 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 132.55 грн |
10+ | 90.97 грн |
20+ | 45.10 грн |
54+ | 42.81 грн |
STE48NM50 |
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Виробник: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 80mΩ
Power dissipation: 450W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±30V
Pulsed drain current: 192A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 80mΩ
Power dissipation: 450W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±30V
Pulsed drain current: 192A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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В кошику
од. на суму грн.
STN4NF20L |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 620 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.52 грн |
13+ | 30.20 грн |
50+ | 17.97 грн |
137+ | 16.97 грн |
STP40NF20 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Kind of package: tube
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Kind of package: tube
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 267.57 грн |
3+ | 224.00 грн |
6+ | 171.25 грн |
15+ | 162.07 грн |
STPS140A |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 7A
на замовлення 15536 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
27+ | 14.45 грн |
34+ | 11.31 грн |
50+ | 9.33 грн |
100+ | 7.74 грн |
199+ | 4.53 грн |
546+ | 4.29 грн |
2500+ | 4.12 грн |
STW45NM60 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 510.44 грн |
3+ | 394.48 грн |
7+ | 372.31 грн |
STB42N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
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В кошику
од. на суму грн.
STP40NF10L |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Kind of package: tube
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±17V
Mounting: THT
Case: TO220-3
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Kind of package: tube
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±17V
Mounting: THT
Case: TO220-3
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
на замовлення 154 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 182.77 грн |
10+ | 116.20 грн |
20+ | 45.10 грн |
55+ | 42.81 грн |
STP42N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ V
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 899.04 грн |
2+ | 598.59 грн |
5+ | 565.72 грн |
STW45N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±20V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±20V
Drain current: 22A
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STW48NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 34 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 434.70 грн |
4+ | 237.76 грн |
11+ | 224.76 грн |
SMBJ48A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2234 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.11 грн |
18+ | 21.33 грн |
50+ | 17.05 грн |
100+ | 15.29 грн |
156+ | 5.81 грн |
428+ | 5.43 грн |
ST1S40IPHR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 4...18V DC
Case: HSOP8
Mounting: SMD
Topology: buck
Number of channels: 1
Output current: 3A
Frequency: 850kHz
Output voltage: 0.8...18V DC
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 4...18V DC
Case: HSOP8
Mounting: SMD
Topology: buck
Number of channels: 1
Output current: 3A
Frequency: 850kHz
Output voltage: 0.8...18V DC
на замовлення 1891 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 167.13 грн |
5+ | 148.31 грн |
8+ | 113.14 грн |
22+ | 107.03 грн |
500+ | 102.44 грн |
STD4NK80ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Power dissipation: 80W
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 1.89A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Power dissipation: 80W
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 1.89A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
на замовлення 2477 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 130.90 грн |
10+ | 81.04 грн |
25+ | 36.70 грн |
69+ | 34.40 грн |
STP14N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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STP45N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 47 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 437.17 грн |
3+ | 316.50 грн |
8+ | 298.92 грн |
STE145N65M5 |
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Виробник: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Drain-source voltage: 650V
Drain current: 90A
On-state resistance: 12mΩ
Power dissipation: 679W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±25V
Pulsed drain current: 572A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Drain-source voltage: 650V
Drain current: 90A
On-state resistance: 12mΩ
Power dissipation: 679W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±25V
Pulsed drain current: 572A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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STGW40V60DF |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 432 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 316.15 грн |
7+ | 148.31 грн |
17+ | 140.67 грн |
120+ | 134.55 грн |
STPS0540Z |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 6603 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.29 грн |
35+ | 11.01 грн |
42+ | 9.27 грн |
50+ | 8.00 грн |
100+ | 6.86 грн |
292+ | 3.08 грн |
803+ | 2.91 грн |
STPS1L40A |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 8A
на замовлення 16142 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.41 грн |
32+ | 12.08 грн |
100+ | 7.92 грн |
207+ | 4.35 грн |
569+ | 4.11 грн |
5000+ | 3.96 грн |
STPS40150CG |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube
Max. load current: 40A
Max. forward voltage: 0.92V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 150V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube
Max. load current: 40A
Max. forward voltage: 0.92V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 150V
на замовлення 83 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 168.19 грн |
7+ | 127.67 грн |
20+ | 120.79 грн |
STPS40150CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V
Max. forward voltage: 0.69V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 150V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V
Max. forward voltage: 0.69V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 150V
на замовлення 102 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 117.73 грн |
10+ | 103.97 грн |
11+ | 89.32 грн |
28+ | 84.45 грн |
STY145N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: MAX247
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 625W
Version: ESD
Gate-source voltage: ±25V
Drain current: 87A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: MAX247
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 625W
Version: ESD
Gate-source voltage: ±25V
Drain current: 87A
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SMAJ24CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 46A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 46A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 3984 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.76 грн |
15+ | 25.53 грн |
50+ | 20.72 грн |
100+ | 18.65 грн |
153+ | 5.81 грн |
421+ | 5.50 грн |
STP45N60DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 504.68 грн |
STPS1545CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V
Max. off-state voltage: 45V
Max. load current: 20A
Max. forward voltage: 0.5V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V
Max. off-state voltage: 45V
Max. load current: 20A
Max. forward voltage: 0.5V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
на замовлення 193 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.16 грн |
10+ | 44.80 грн |
43+ | 21.02 грн |
117+ | 19.88 грн |
STPS1545FP |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V
Max. off-state voltage: 45V
Max. load current: 30A
Max. forward voltage: 0.57V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V
Max. off-state voltage: 45V
Max. load current: 30A
Max. forward voltage: 0.57V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP-2
на замовлення 244 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 73.27 грн |
10+ | 45.18 грн |
29+ | 31.57 грн |
78+ | 29.82 грн |
STPS24045TV |
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Виробник: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw
Max. forward impulse current: 1.15kA
Max. off-state voltage: 45V
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Max. load current: 240A
Type of semiconductor module: diode
Max. forward voltage: 0.68V
Load current: 120A x2
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw
Max. forward impulse current: 1.15kA
Max. off-state voltage: 45V
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Max. load current: 240A
Type of semiconductor module: diode
Max. forward voltage: 0.68V
Load current: 120A x2
Semiconductor structure: double independent
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STPS41H100CG |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 40A
Max. forward impulse current: 220A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 40A
Max. forward impulse current: 220A
Kind of package: tube
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 122.67 грн |
10+ | 97.85 грн |
12+ | 79.51 грн |
STW45N60DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 29 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 563.13 грн |
3+ | 331.02 грн |
8+ | 312.68 грн |
STGIPS14K60 |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; SLLIMM™; SDIP-25L; 14A; Ch: 6
Mounting: THT
Case: SDIP-25L
Operating temperature: -40...125°C
Output current: 14A
Type of integrated circuit: driver
Number of channels: 6
Power dissipation: 42W
Technology: SLLIMM™
Kind of integrated circuit: 3-phase motor controller; IPM
Operating voltage: 13.5...18/0...400V DC
Topology: IGBT three-phase bridge
Frequency: 20kHz
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; SLLIMM™; SDIP-25L; 14A; Ch: 6
Mounting: THT
Case: SDIP-25L
Operating temperature: -40...125°C
Output current: 14A
Type of integrated circuit: driver
Number of channels: 6
Power dissipation: 42W
Technology: SLLIMM™
Kind of integrated circuit: 3-phase motor controller; IPM
Operating voltage: 13.5...18/0...400V DC
Topology: IGBT three-phase bridge
Frequency: 20kHz
Collector-emitter voltage: 600V
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STM32F417VGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 168MHz; LQFP100; 1.8÷3.6VDC
Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Clock frequency: 168MHz
Kind of architecture: Cortex M4
Family: STM32F4
Memory: 192kB SRAM; 1MB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 168MHz; LQFP100; 1.8÷3.6VDC
Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Clock frequency: 168MHz
Kind of architecture: Cortex M4
Family: STM32F4
Memory: 192kB SRAM; 1MB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 83 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1025.00 грн |
3+ | 899.80 грн |
STM32G473VBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB FLASH; 128kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB FLASH; 128kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
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STM32G473VCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
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STM32G473VEH6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; TFBGA100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: TFBGA100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD x3; I2C x4; I2S x4; SAI; SPI x4; UART x2; USART x3; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; RNG; RTC; watchdog
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; TFBGA100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: TFBGA100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD x3; I2C x4; I2S x4; SAI; SPI x4; UART x2; USART x3; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; RNG; RTC; watchdog
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
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STM32G473VET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
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STM32G474QET3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP128; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 107
Case: LQFP128
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; I2C x4; I2S x4; PWM; SAI; UART x2; USART x3; USB
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP128; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 107
Case: LQFP128
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; I2C x4; I2S x4; PWM; SAI; UART x2; USART x3; USB
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
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В кошику
од. на суму грн.
STM32G474QET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP128; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 107
Case: LQFP128
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP128; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 107
Case: LQFP128
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
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STM32G474RBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB FLASH; 128kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of comparators: 7
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB FLASH; 128kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of comparators: 7
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
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В кошику
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STM32G474RCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of comparators: 7
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of comparators: 7
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
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од. на суму грн.
STM32G474RET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
Number of comparators: 7
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од. на суму грн.
STM32G474VBT3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB FLASH; 128kB SRAM
Operating temperature: -40...125°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB FLASH; 128kB SRAM
Operating temperature: -40...125°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
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од. на суму грн.
STM32G474VCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
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од. на суму грн.
STM32G474VEH6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; TFBGA100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: TFBGA100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; TFBGA100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: TFBGA100
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; CAN-FD x2; I2C x4; I2S x2; SAI; SPI x4; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
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од. на суму грн.
STM32G474VET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; I2C x4; I2S x4; PWM; SAI; UART x2; USART x3; USB
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; I2C x4; I2S x4; PWM; SAI; UART x2; USART x3; USB
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
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од. на суму грн.
STM32G483RET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP64; 1.71÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD; I2C x4; I2S x2; SAI; SPI x3; UART x2; USART x3; USB 2.0; USB C
Kind of architecture: Cortex M4F
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 5
Number of 12bit D/A converters: 7
Family: STM32G4
Number of 16bit timers: 11
Number of 32bit timers: 2
Number of comparators: 7
товару немає в наявності
В кошику
од. на суму грн.