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STW10N105K5 STMicroelectronics stw10n105k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STGB6NC60HDT4 STMicroelectronics en.CD00058424.pdf description Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40V60F STMicroelectronics en.DM00086251.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
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STGB10M65DF2 STMicroelectronics en.DM00157911.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40H65FB STMicroelectronics en.DM00306732.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
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STGB50H65FB2 STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
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STGB20M65DF2 STMicroelectronics en.DM00244727.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB25N36LZAG STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB5H60DF STMicroelectronics en.DM00149621.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB6M65DF2 STMicroelectronics en.DM00250133.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10H60DF STMicroelectronics en.DM00092752.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10NB40LZT4 STMicroelectronics en.DM00372350.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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STGB14NC60KDT4 STGB14NC60KDT4 STMicroelectronics stgb14nc60kdt4.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB15M65DF2 STMicroelectronics en.DM00096991.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H60DF STMicroelectronics en.DM00066598.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H65FB2 STMicroelectronics stgb20h65fb2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
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STGB20N45LZAG STMicroelectronics en.DM00242156.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry
Version: ESD
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STGB20NB41LZT4 STMicroelectronics en.CD00003294.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry; ignition systems
Version: ESD
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STGB20V60DF STMicroelectronics en.DM00079434.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB25N40LZAG STMicroelectronics STGB25N40LZAG.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB30M65DF2 STMicroelectronics STGB30M65DF2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB30V60DF STGB30V60DF STMicroelectronics stgb30v60df.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB4M65DF2 STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7H60DF STMicroelectronics en.DM00164492.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7NC60HDT4 STMicroelectronics en.CD00003695.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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VNP35N07-E VNP35N07-E STMicroelectronics vnb35n07-e.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 35A; Ch: 1; THT; TO220-3; tube
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 35A
Number of channels: 1
Mounting: THT
Case: TO220-3
On-state resistance: 28mΩ
Kind of package: tube
Output voltage: 70V
на замовлення 348 шт:
термін постачання 21-30 дні (днів)
2+316.15 грн
3+278.27 грн
5+217.11 грн
12+205.65 грн
100+198.00 грн
Мінімальне замовлення: 2
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L9362013TR STMicroelectronics l9362.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Ch: 4; SMD; PowerSSO36; reel,tape; 3MHz
Mounting: SMD
Operating temperature: -40...150°C
Case: PowerSSO36
Supply voltage: 4.5...5.5V
Frequency: 3MHz
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: reel; tape
Kind of integrated circuit: low-side
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SMAJ48A-TR SMAJ48A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2303 шт:
термін постачання 21-30 дні (днів)
20+20.58 грн
28+14.07 грн
50+11.77 грн
100+10.78 грн
167+5.50 грн
457+5.20 грн
Мінімальне замовлення: 20
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STL260N4F7 STMicroelectronics stl260n4f7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
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STL260N4LF7 STMicroelectronics stl260n4lf7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
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STWA88N65M5 STMicroelectronics stwa88n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 50.5A; Idm: 336A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
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SMCJ15A-TR SMCJ15A-TR STMicroelectronics smcj15a.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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MC3303DT MC3303DT STMicroelectronics mc3303.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 3÷36V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 6mV
Bandwidth: 1MHz
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.5V/μs
Input offset current: 200nA
Input bias current: 0.8µA
Operating voltage: 3...36V
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VN820 VN820 STMicroelectronics VN820.pdf Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 9A; Pentawatt
Type of integrated circuit: power switch
Case: Pentawatt
Output current: 9A
Number of channels: 1
Kind of integrated circuit: high-side
Mounting: THT
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SCT070H120G3AG STMicroelectronics sct070h120g3ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 223W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCT070W120G3-4AG STMicroelectronics sct070w120g3-4ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 116A; 236W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 116A
Power dissipation: 236W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
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SMAJ28A-TR SMAJ28A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 9740 шт:
термін постачання 21-30 дні (днів)
16+27.17 грн
23+16.90 грн
50+13.53 грн
100+12.16 грн
163+5.43 грн
449+5.12 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
FERD20S100STS FERD20S100STS STMicroelectronics FERD20S100S.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 20A; tube; Ifsm: 220A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.415V
Max. load current: 40A
Max. forward impulse current: 220A
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
5+97.15 грн
10+58.18 грн
23+39.14 грн
63+37.00 грн
Мінімальне замовлення: 5
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BD139 BD139 STMicroelectronics BD139-10-STMicroelectronics.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: SOT32
Current gain: 25...250
Mounting: THT
Kind of package: tube
Frequency: 50MHz
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LD2981ABU50TR LD2981ABU50TR STMicroelectronics LD2981.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
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LD2981CU50TR LD2981CU50TR STMicroelectronics LD2981.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
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LD2981ABM30TR LD2981ABM30TR STMicroelectronics ld2981.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.375V
Output voltage: 3V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
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LD2981CM30TR LD2981CM30TR STMicroelectronics ld2981.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.375V
Output voltage: 3V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 2.5...16V
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LD2981ABM50TR LD2981ABM50TR STMicroelectronics ld2981.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
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STB16NF06LT4 STB16NF06LT4 STMicroelectronics STB16NF06LT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
на замовлення 2439 шт:
термін постачання 21-30 дні (днів)
3+148.19 грн
10+90.06 грн
30+30.58 грн
83+28.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STD16NF06LT4 STD16NF06LT4 STMicroelectronics STD16NF06L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)
7+63.39 грн
10+47.63 грн
49+18.50 грн
134+17.51 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
LM324D LM324D STMicroelectronics LM324DT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; SO14; ±1.5÷15VDC,3÷30VDC
Operating temperature: 0...70°C
Input bias current: 0.2µA
Voltage supply range: ± 1.5...15V DC; 3...30V DC
Mounting: SMT
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: 4
Bandwidth: 1.3MHz
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: tube
Slew rate: 0.4V/μs
Input offset current: 40nA
на замовлення 2369 шт:
термін постачання 21-30 дні (днів)
36+11.53 грн
43+8.94 грн
100+8.49 грн
250+7.64 грн
500+7.11 грн
1000+6.73 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
STGD25N36LZAG STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry; ignition systems
Version: ESD
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STGD25N40LZAG STMicroelectronics en.DM00431184.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry; ignition systems
Version: ESD
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STP100N10F7 STP100N10F7 STMicroelectronics en.DM00066568.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
2+209.12 грн
5+174.30 грн
7+133.79 грн
19+126.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF100N10F7 STMicroelectronics en.DM00066568.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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STD100N10F7 STMicroelectronics std100n10f7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 320A; 120W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Pulsed drain current: 320A
Power dissipation: 120W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
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L4931CDT33-TR L4931CDT33-TR STMicroelectronics L4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
Manufacturer series: L4931
на замовлення 1064 шт:
термін постачання 21-30 дні (днів)
5+91.39 грн
10+59.94 грн
26+34.71 грн
71+32.80 грн
1000+31.57 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
L4931CD33-TR L4931CD33-TR STMicroelectronics L4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
Manufacturer series: L4931
на замовлення 1971 шт:
термін постачання 21-30 дні (днів)
5+88.92 грн
10+55.27 грн
28+32.57 грн
76+30.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
L4931ABDT50-TR STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.25A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 5.8...20V
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L4931CDT50-TR L4931CDT50-TR STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
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L4931ABDT33-TR STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.25A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4...20V
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L4931CZ50-AP L4931CZ50-AP STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.25A
Case: TO92
Mounting: THT
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.8...20V
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L4931ABD33-TR L4931ABD33-TR STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
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L4931CD33-TRY L4931CD33-TRY STMicroelectronics l4931.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; SO8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.82V
Output voltage: 3.3V
Output current: 0.25A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.1...20V
Application: automotive industry
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STW10N105K5 stw10n105k5.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STGB6NC60HDT4 description en.CD00058424.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40V60F en.DM00086251.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
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STGB10M65DF2 en.DM00157911.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40H65FB en.DM00306732.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
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STGB50H65FB2
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
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STGB20M65DF2 en.DM00244727.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB25N36LZAG
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB5H60DF en.DM00149621.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB6M65DF2 en.DM00250133.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10H60DF en.DM00092752.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10NB40LZT4 en.DM00372350.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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STGB14NC60KDT4 stgb14nc60kdt4.pdf
STGB14NC60KDT4
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB15M65DF2 en.DM00096991.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H60DF en.DM00066598.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H65FB2 stgb20h65fb2.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
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STGB20N45LZAG en.DM00242156.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry
Version: ESD
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STGB20NB41LZT4 en.CD00003294.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry; ignition systems
Version: ESD
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STGB20V60DF en.DM00079434.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB25N40LZAG STGB25N40LZAG.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB30M65DF2 STGB30M65DF2.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB30V60DF stgb30v60df.pdf
STGB30V60DF
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB4M65DF2
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7H60DF en.DM00164492.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7NC60HDT4 en.CD00003695.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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VNP35N07-E vnb35n07-e.pdf
VNP35N07-E
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 35A; Ch: 1; THT; TO220-3; tube
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 35A
Number of channels: 1
Mounting: THT
Case: TO220-3
On-state resistance: 28mΩ
Kind of package: tube
Output voltage: 70V
на замовлення 348 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+316.15 грн
3+278.27 грн
5+217.11 грн
12+205.65 грн
100+198.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
L9362013TR l9362.pdf
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Ch: 4; SMD; PowerSSO36; reel,tape; 3MHz
Mounting: SMD
Operating temperature: -40...150°C
Case: PowerSSO36
Supply voltage: 4.5...5.5V
Frequency: 3MHz
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: reel; tape
Kind of integrated circuit: low-side
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SMAJ48A-TR SMAJxxX_ser.pdf
SMAJ48A-TR
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2303 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+20.58 грн
28+14.07 грн
50+11.77 грн
100+10.78 грн
167+5.50 грн
457+5.20 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
STL260N4F7 stl260n4f7.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
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STL260N4LF7 stl260n4lf7.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
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STWA88N65M5 stwa88n65m5.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 50.5A; Idm: 336A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
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SMCJ15A-TR smcj15a.pdf
SMCJ15A-TR
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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MC3303DT mc3303.pdf
MC3303DT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 3÷36V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 6mV
Bandwidth: 1MHz
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.5V/μs
Input offset current: 200nA
Input bias current: 0.8µA
Operating voltage: 3...36V
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VN820 VN820.pdf
VN820
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 9A; Pentawatt
Type of integrated circuit: power switch
Case: Pentawatt
Output current: 9A
Number of channels: 1
Kind of integrated circuit: high-side
Mounting: THT
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SCT070H120G3AG sct070h120g3ag.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 223W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCT070W120G3-4AG sct070w120g3-4ag.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 116A; 236W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 116A
Power dissipation: 236W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
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SMAJ28A-TR SMAJxxX_ser.pdf
SMAJ28A-TR
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 9740 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.17 грн
23+16.90 грн
50+13.53 грн
100+12.16 грн
163+5.43 грн
449+5.12 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
FERD20S100STS FERD20S100S.pdf
FERD20S100STS
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 20A; tube; Ifsm: 220A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.415V
Max. load current: 40A
Max. forward impulse current: 220A
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+97.15 грн
10+58.18 грн
23+39.14 грн
63+37.00 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BD139 BD139-10-STMicroelectronics.pdf
BD139
Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: SOT32
Current gain: 25...250
Mounting: THT
Kind of package: tube
Frequency: 50MHz
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LD2981ABU50TR LD2981.pdf
LD2981ABU50TR
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
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LD2981CU50TR LD2981.pdf
LD2981CU50TR
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
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LD2981ABM30TR ld2981.pdf
LD2981ABM30TR
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.375V
Output voltage: 3V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
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LD2981CM30TR ld2981.pdf
LD2981CM30TR
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.375V
Output voltage: 3V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 2.5...16V
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LD2981ABM50TR ld2981.pdf
LD2981ABM50TR
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.18V
Output voltage: 5V
Output current: 0.1A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD2981
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.75%
Number of channels: 1
Input voltage: 2.5...16V
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STB16NF06LT4 STB16NF06LT4.pdf
STB16NF06LT4
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
на замовлення 2439 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+148.19 грн
10+90.06 грн
30+30.58 грн
83+28.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STD16NF06LT4 STD16NF06L.pdf
STD16NF06LT4
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.39 грн
10+47.63 грн
49+18.50 грн
134+17.51 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
LM324D LM324DT.pdf
LM324D
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; Ch: 4; SO14; ±1.5÷15VDC,3÷30VDC
Operating temperature: 0...70°C
Input bias current: 0.2µA
Voltage supply range: ± 1.5...15V DC; 3...30V DC
Mounting: SMT
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: 4
Bandwidth: 1.3MHz
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: tube
Slew rate: 0.4V/μs
Input offset current: 40nA
на замовлення 2369 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.53 грн
43+8.94 грн
100+8.49 грн
250+7.64 грн
500+7.11 грн
1000+6.73 грн
Мінімальне замовлення: 36
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STGD25N36LZAG
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry; ignition systems
Version: ESD
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STGD25N40LZAG en.DM00431184.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry; ignition systems
Version: ESD
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STP100N10F7 en.DM00066568.pdf
STP100N10F7
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+209.12 грн
5+174.30 грн
7+133.79 грн
19+126.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF100N10F7 en.DM00066568.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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STD100N10F7 std100n10f7.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 320A; 120W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Pulsed drain current: 320A
Power dissipation: 120W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
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L4931CDT33-TR L4931.pdf
L4931CDT33-TR
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
Manufacturer series: L4931
на замовлення 1064 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+91.39 грн
10+59.94 грн
26+34.71 грн
71+32.80 грн
1000+31.57 грн
Мінімальне замовлення: 5
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L4931CD33-TR L4931.pdf
L4931CD33-TR
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
Manufacturer series: L4931
на замовлення 1971 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+88.92 грн
10+55.27 грн
28+32.57 грн
76+30.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
L4931ABDT50-TR l4931.pdf
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.25A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 5.8...20V
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L4931CDT50-TR l4931.pdf
L4931CDT50-TR
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
товару немає в наявності
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L4931ABDT33-TR l4931.pdf
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.25A
Case: DPAK
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4...20V
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L4931CZ50-AP l4931.pdf
L4931CZ50-AP
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.25A
Case: TO92
Mounting: THT
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.8...20V
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L4931ABD33-TR l4931.pdf
L4931ABD33-TR
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
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L4931CD33-TRY l4931.pdf
L4931CD33-TRY
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; SO8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.82V
Output voltage: 3.3V
Output current: 0.25A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.1...20V
Application: automotive industry
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