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STR1550 STR1550 STMicroelectronics en.DM00040355.pdf Description: TRANS NPN 500V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+10.76 грн
6000+9.47 грн
9000+9.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STR2550 STR2550 STMicroelectronics en.DM00040356.pdf Description: TRANS PNP 500V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+11.33 грн
6000+9.98 грн
9000+9.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STF100N10F7 STF100N10F7 STMicroelectronics en.DM00066568.pdf Description: MOSFET N CH 100V 45A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 22.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
на замовлення 1461 шт:
термін постачання 21-31 дні (днів)
2+184.98 грн
50+81.59 грн
100+80.90 грн
500+72.13 грн
1000+66.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF10P6F6 STF10P6F6 STMicroelectronics en.DM00051198.pdf Description: MOSFET P-CH 60V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
товару немає в наявності
В кошику  од. на суму  грн.
STF13N60M2 STF13N60M2 STMicroelectronics en.DM00070271.pdf Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 1362 шт:
термін постачання 21-31 дні (днів)
3+109.56 грн
50+65.50 грн
100+61.08 грн
500+46.07 грн
1000+42.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGWT60V60DF STGWT60V60DF STMicroelectronics en.DM00074810.pdf Description: IGBT TRENCH FIELD STOP 600V 80A
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
товару немає в наявності
В кошику  од. на суму  грн.
STI10NM60N STI10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
товару немає в наявності
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STP13N60M2 STP13N60M2 STMicroelectronics en.DM00070267.pdf Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 709 шт:
термін постачання 21-31 дні (днів)
3+117.50 грн
50+64.83 грн
100+63.63 грн
500+51.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP9N60M2 STP9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STAC3933 STAC3933 STMicroelectronics en.DM00046798.pdf Description: IC TRANS RF HV/VHF/UHF STAC177B
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
LD1086PUR LD1086PUR STMicroelectronics en.CD00001884.pdf Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
на замовлення 2006 шт:
термін постачання 21-31 дні (днів)
4+98.44 грн
10+68.88 грн
25+62.41 грн
100+51.87 грн
250+48.67 грн
500+46.74 грн
1000+44.41 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LED2001PUR LED2001PUR STMicroelectronics en.DM00079085.pdf Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
на замовлення 24169 шт:
термін постачання 21-31 дні (днів)
2+182.60 грн
10+131.19 грн
25+119.93 грн
100+100.95 грн
250+95.43 грн
500+92.10 грн
1000+87.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LNBH29EQTR LNBH29EQTR STMicroelectronics en.DM00052416.pdf Description: IC LNB CTRL STEP-UP I2C 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 8V ~ 17.5V
Applications: Low-Noise Block (LNB) Down-Converter
Current - Supply: 10mA
Supplier Device Package: 16-QFN (3x3)
на замовлення 416 шт:
термін постачання 21-31 дні (днів)
2+227.85 грн
10+197.24 грн
25+186.47 грн
100+151.66 грн
250+143.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM8834MTR PM8834MTR STMicroelectronics en.CD00212712.pdf Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-MSOP-EP
Rise / Fall Time (Typ): 45ns, 35ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3640 шт:
термін постачання 21-31 дні (днів)
2+159.57 грн
10+113.99 грн
25+103.94 грн
100+87.15 грн
250+82.19 грн
500+79.20 грн
1000+75.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM8903ATR PM8903ATR STMicroelectronics en.DM00074624.pdf Description: IC REG BUCK ADJ 3A 16VFQFPN
товару немає в наявності
В кошику  од. на суму  грн.
ST1S41PHR ST1S41PHR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 9421 шт:
термін постачання 21-31 дні (днів)
3+140.52 грн
10+99.77 грн
25+90.79 грн
100+75.96 грн
250+71.54 грн
500+68.88 грн
1000+65.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ST1S41PUR ST1S41PUR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
товару немає в наявності
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STB13N80K5 STB13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 584 шт:
термін постачання 21-31 дні (днів)
1+324.70 грн
10+230.19 грн
100+170.47 грн
500+139.23 грн
В кошику  од. на суму  грн.
STB36NM60ND STB36NM60ND STMicroelectronics STx36NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1225 шт:
термін постачання 21-31 дні (днів)
1+539.85 грн
10+350.98 грн
100+255.61 грн
500+201.77 грн
В кошику  од. на суму  грн.
STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 4945 шт:
термін постачання 21-31 дні (днів)
4+100.82 грн
10+67.81 грн
100+51.63 грн
500+38.30 грн
1000+35.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 9424 шт:
термін постачання 21-31 дні (днів)
2+219.91 грн
10+176.14 грн
100+160.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
на замовлення 3666 шт:
термін постачання 21-31 дні (днів)
4+96.85 грн
10+65.36 грн
100+50.31 грн
500+37.28 грн
1000+34.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STH270N8F7-2 STH270N8F7-2 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H²PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
товару немає в наявності
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STH270N8F7-6 STH270N8F7-6 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
на замовлення 1674 шт:
термін постачання 21-31 дні (днів)
1+352.49 грн
10+261.76 грн
100+187.73 грн
500+171.11 грн
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STH320N4F6-2 STH320N4F6-2 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Qualification: AEC-Q101
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STH3N150-2 STH3N150-2 STMicroelectronics en.CD00149569.pdf Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
на замовлення 7014 шт:
термін постачання 21-31 дні (днів)
1+419.18 грн
10+296.55 грн
100+214.27 грн
500+200.61 грн
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STL110N10F7 STL110N10F7 STMicroelectronics en.DM00071579.pdf Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
на замовлення 2517 шт:
термін постачання 21-31 дні (днів)
2+201.65 грн
10+148.69 грн
100+106.24 грн
500+80.92 грн
1000+74.88 грн
Мінімальне замовлення: 2
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STL38N65M5 STL38N65M5 STMicroelectronics en.DM00056210.pdf Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
1+485.86 грн
10+315.58 грн
100+234.29 грн
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STL60N10F7 STL60N10F7 STMicroelectronics en.DM00081178.pdf Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
на замовлення 14477 шт:
термін постачання 21-31 дні (днів)
3+155.60 грн
10+96.02 грн
100+64.97 грн
500+48.49 грн
1000+44.48 грн
Мінімальне замовлення: 3
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STNS01PUR STNS01PUR STMicroelectronics en.DM00085223.pdf Description: IC BATT CHG LI-ION 1CELL 12DFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-DFN (3x3)
Charge Current - Max: 220mA
Fault Protection: Over Current, Over Temperature, Short Circuit
Voltage - Supply (Max): 5.4V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Part Status: Active
на замовлення 6512 шт:
термін постачання 21-31 дні (днів)
3+147.66 грн
10+104.51 грн
25+95.19 грн
100+79.69 грн
250+75.10 грн
500+72.33 грн
1000+68.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STR2N2VH5 STR2N2VH5 STMicroelectronics en.DM00068028.pdf Description: MOSFET N-CH 20V 2.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
на замовлення 77851 шт:
термін постачання 21-31 дні (днів)
6+55.57 грн
10+43.96 грн
100+34.18 грн
500+27.19 грн
1000+26.89 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
L6751TR L6751TR STMicroelectronics L6751_ds.pdf Description: IC REG CTRLR DDR 2OUT 72WPLGA
Packaging: Tape & Reel (TR)
Package / Case: 72-WFLGA Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, DDR, Intel VR12, AMD SVI
Supplier Device Package: 72-WPLGA (6x6)
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L6758ATR L6758ATR STMicroelectronics L6758A.pdf Description: IC REG CTRLR VR12 2OUT 48VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel VR12
Supplier Device Package: 48-VFQFPN (6x6)
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LD1086PUR LD1086PUR STMicroelectronics en.CD00001884.pdf Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
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LED2001PUR LED2001PUR STMicroelectronics en.DM00079085.pdf Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
4500+94.01 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
LNBH29EQTR LNBH29EQTR STMicroelectronics en.DM00052416.pdf Description: IC LNB CTRL STEP-UP I2C 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 8V ~ 17.5V
Applications: Low-Noise Block (LNB) Down-Converter
Current - Supply: 10mA
Supplier Device Package: 16-QFN (3x3)
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PM8834MTR PM8834MTR STMicroelectronics en.CD00212712.pdf Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-MSOP-EP
Rise / Fall Time (Typ): 45ns, 35ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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PM8903ATR PM8903ATR STMicroelectronics en.DM00074624.pdf Description: IC REG BUCK ADJ 3A 16VFQFPN
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ST1S41PHR ST1S41PHR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+71.23 грн
5000+67.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ST1S41PUR ST1S41PUR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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STB13N80K5 STB13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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STB36NM60ND STB36NM60ND STMicroelectronics STx36NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Qualification: AEC-Q101
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STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+33.53 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+136.19 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+32.68 грн
Мінімальне замовлення: 2500
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STH270N8F7-2 STH270N8F7-2 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H²PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
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STH270N8F7-6 STH270N8F7-6 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
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STH320N4F6-2 STH320N4F6-2 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STH3N150-2 STH3N150-2 STMicroelectronics en.CD00149569.pdf Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
1000+181.36 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STL110N10F7 STL110N10F7 STMicroelectronics en.DM00071579.pdf Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STL38N65M5 STL38N65M5 STMicroelectronics en.DM00056210.pdf Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STL60N10F7 STL60N10F7 STMicroelectronics en.DM00081178.pdf Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+43.58 грн
6000+39.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STNS01PUR STNS01PUR STMicroelectronics en.DM00085223.pdf Description: IC BATT CHG LI-ION 1CELL 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-DFN (3x3)
Charge Current - Max: 220mA
Fault Protection: Over Current, Over Temperature, Short Circuit
Voltage - Supply (Max): 5.4V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+74.40 грн
6000+70.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STR2N2VH5 STR2N2VH5 STMicroelectronics en.DM00068028.pdf Description: MOSFET N-CH 20V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)
3000+29.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STF13NM60ND STF13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 662 шт:
термін постачання 21-31 дні (днів)
2+209.59 грн
50+136.77 грн
100+136.43 грн
500+123.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF18NM60ND STF18NM60ND STMicroelectronics en.DM00085221.pdf Description: MOSFET N-CH 600V 13A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
товару немає в наявності
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STFI5N95K3 STFI5N95K3 STMicroelectronics STFI5N95K3_ds.pdf Description: MOSFET N-CH 950V 4A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: I2PAKFP (TO-281)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
на замовлення 695 шт:
термін постачання 21-31 дні (днів)
2+191.33 грн
10+153.05 грн
100+121.81 грн
500+96.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STFI8N80K5 STFI8N80K5 STMicroelectronics en.DM00080811.pdf Description: MOSFET N-CH 800V 6A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
товару немає в наявності
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STGIPN3H60-H STGIPN3H60-H STMicroelectronics en.DM00074234.pdf Description: MOD IGBT SLLIMM NANO 26-NDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (0.846", 21.48mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1000Vrms
Part Status: Obsolete
Current: 3 A
Voltage: 600 V
товару немає в наявності
В кошику  од. на суму  грн.
STGIPS10K60T-H STGIPS10K60T-H STMicroelectronics en.DM00075077.pdf Description: MOD IGBT SLLIMM 10A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
товару немає в наявності
В кошику  од. на суму  грн.
STR1550 en.DM00040355.pdf
STR1550
Виробник: STMicroelectronics
Description: TRANS NPN 500V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.76 грн
6000+9.47 грн
9000+9.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STR2550 en.DM00040356.pdf
STR2550
Виробник: STMicroelectronics
Description: TRANS PNP 500V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.33 грн
6000+9.98 грн
9000+9.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STF100N10F7 en.DM00066568.pdf
STF100N10F7
Виробник: STMicroelectronics
Description: MOSFET N CH 100V 45A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 22.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
на замовлення 1461 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+184.98 грн
50+81.59 грн
100+80.90 грн
500+72.13 грн
1000+66.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF10P6F6 en.DM00051198.pdf
STF10P6F6
Виробник: STMicroelectronics
Description: MOSFET P-CH 60V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
товару немає в наявності
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STF13N60M2 en.DM00070271.pdf
STF13N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 1362 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+109.56 грн
50+65.50 грн
100+61.08 грн
500+46.07 грн
1000+42.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGWT60V60DF en.DM00074810.pdf
STGWT60V60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FIELD STOP 600V 80A
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
товару немає в наявності
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STI10NM60N std10nm60n.pdf
STI10NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
товару немає в наявності
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STP13N60M2 en.DM00070267.pdf
STP13N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 709 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.50 грн
50+64.83 грн
100+63.63 грн
500+51.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP9N60M2 en.DM00080324.pdf
STP9N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
товару немає в наявності
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STAC3933 en.DM00046798.pdf
STAC3933
Виробник: STMicroelectronics
Description: IC TRANS RF HV/VHF/UHF STAC177B
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
LD1086PUR en.CD00001884.pdf
LD1086PUR
Виробник: STMicroelectronics
Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
на замовлення 2006 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.44 грн
10+68.88 грн
25+62.41 грн
100+51.87 грн
250+48.67 грн
500+46.74 грн
1000+44.41 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LED2001PUR en.DM00079085.pdf
LED2001PUR
Виробник: STMicroelectronics
Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
на замовлення 24169 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+182.60 грн
10+131.19 грн
25+119.93 грн
100+100.95 грн
250+95.43 грн
500+92.10 грн
1000+87.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LNBH29EQTR en.DM00052416.pdf
LNBH29EQTR
Виробник: STMicroelectronics
Description: IC LNB CTRL STEP-UP I2C 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 8V ~ 17.5V
Applications: Low-Noise Block (LNB) Down-Converter
Current - Supply: 10mA
Supplier Device Package: 16-QFN (3x3)
на замовлення 416 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+227.85 грн
10+197.24 грн
25+186.47 грн
100+151.66 грн
250+143.88 грн
Мінімальне замовлення: 2
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PM8834MTR en.CD00212712.pdf
PM8834MTR
Виробник: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-MSOP-EP
Rise / Fall Time (Typ): 45ns, 35ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3640 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.57 грн
10+113.99 грн
25+103.94 грн
100+87.15 грн
250+82.19 грн
500+79.20 грн
1000+75.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM8903ATR en.DM00074624.pdf
PM8903ATR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 3A 16VFQFPN
товару немає в наявності
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ST1S41PHR en.DM00064431.pdf
ST1S41PHR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 9421 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+140.52 грн
10+99.77 грн
25+90.79 грн
100+75.96 грн
250+71.54 грн
500+68.88 грн
1000+65.59 грн
Мінімальне замовлення: 3
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ST1S41PUR en.DM00064431.pdf
ST1S41PUR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
товару немає в наявності
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STB13N80K5 en.DM00079143.pdf
STB13N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 584 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+324.70 грн
10+230.19 грн
100+170.47 грн
500+139.23 грн
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STB36NM60ND STx36NM60ND_DS.pdf
STB36NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1225 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+539.85 грн
10+350.98 грн
100+255.61 грн
500+201.77 грн
В кошику  од. на суму  грн.
STD13N60M2 en.DM00082928.pdf
STD13N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 4945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.82 грн
10+67.81 грн
100+51.63 грн
500+38.30 грн
1000+35.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 9424 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+219.91 грн
10+176.14 грн
100+160.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STD9N60M2 en.DM00080324.pdf
STD9N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
на замовлення 3666 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.85 грн
10+65.36 грн
100+50.31 грн
500+37.28 грн
1000+34.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STH270N8F7-2 en.DM00071594.pdf
STH270N8F7-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H²PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
товару немає в наявності
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STH270N8F7-6 en.DM00071594.pdf
STH270N8F7-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
на замовлення 1674 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+352.49 грн
10+261.76 грн
100+187.73 грн
500+171.11 грн
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STH320N4F6-2 en.DM00076403.pdf
STH320N4F6-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
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STH3N150-2 en.CD00149569.pdf
STH3N150-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
на замовлення 7014 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+419.18 грн
10+296.55 грн
100+214.27 грн
500+200.61 грн
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STL110N10F7 en.DM00071579.pdf
STL110N10F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
на замовлення 2517 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+201.65 грн
10+148.69 грн
100+106.24 грн
500+80.92 грн
1000+74.88 грн
Мінімальне замовлення: 2
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STL38N65M5 en.DM00056210.pdf
STL38N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+485.86 грн
10+315.58 грн
100+234.29 грн
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STL60N10F7 en.DM00081178.pdf
STL60N10F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
на замовлення 14477 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+155.60 грн
10+96.02 грн
100+64.97 грн
500+48.49 грн
1000+44.48 грн
Мінімальне замовлення: 3
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STNS01PUR en.DM00085223.pdf
STNS01PUR
Виробник: STMicroelectronics
Description: IC BATT CHG LI-ION 1CELL 12DFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-DFN (3x3)
Charge Current - Max: 220mA
Fault Protection: Over Current, Over Temperature, Short Circuit
Voltage - Supply (Max): 5.4V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Part Status: Active
на замовлення 6512 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.66 грн
10+104.51 грн
25+95.19 грн
100+79.69 грн
250+75.10 грн
500+72.33 грн
1000+68.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STR2N2VH5 en.DM00068028.pdf
STR2N2VH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 20V 2.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
на замовлення 77851 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+55.57 грн
10+43.96 грн
100+34.18 грн
500+27.19 грн
1000+26.89 грн
Мінімальне замовлення: 6
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L6751TR L6751_ds.pdf
L6751TR
Виробник: STMicroelectronics
Description: IC REG CTRLR DDR 2OUT 72WPLGA
Packaging: Tape & Reel (TR)
Package / Case: 72-WFLGA Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, DDR, Intel VR12, AMD SVI
Supplier Device Package: 72-WPLGA (6x6)
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L6758ATR L6758A.pdf
L6758ATR
Виробник: STMicroelectronics
Description: IC REG CTRLR VR12 2OUT 48VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel VR12
Supplier Device Package: 48-VFQFPN (6x6)
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LD1086PUR en.CD00001884.pdf
LD1086PUR
Виробник: STMicroelectronics
Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
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LED2001PUR en.DM00079085.pdf
LED2001PUR
Виробник: STMicroelectronics
Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4500+94.01 грн
Мінімальне замовлення: 4500
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LNBH29EQTR en.DM00052416.pdf
LNBH29EQTR
Виробник: STMicroelectronics
Description: IC LNB CTRL STEP-UP I2C 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 8V ~ 17.5V
Applications: Low-Noise Block (LNB) Down-Converter
Current - Supply: 10mA
Supplier Device Package: 16-QFN (3x3)
товару немає в наявності
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PM8834MTR en.CD00212712.pdf
PM8834MTR
Виробник: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-MSOP-EP
Rise / Fall Time (Typ): 45ns, 35ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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PM8903ATR en.DM00074624.pdf
PM8903ATR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 3A 16VFQFPN
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ST1S41PHR en.DM00064431.pdf
ST1S41PHR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+71.23 грн
5000+67.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ST1S41PUR en.DM00064431.pdf
ST1S41PUR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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STB13N80K5 en.DM00079143.pdf
STB13N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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STB36NM60ND STx36NM60ND_DS.pdf
STB36NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
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STD13N60M2 en.DM00082928.pdf
STD13N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+33.53 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+136.19 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD9N60M2 en.DM00080324.pdf
STD9N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+32.68 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STH270N8F7-2 en.DM00071594.pdf
STH270N8F7-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H²PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
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STH270N8F7-6 en.DM00071594.pdf
STH270N8F7-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
товару немає в наявності
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STH320N4F6-2 en.DM00076403.pdf
STH320N4F6-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
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STH3N150-2 en.CD00149569.pdf
STH3N150-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+181.36 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STL110N10F7 en.DM00071579.pdf
STL110N10F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
товару немає в наявності
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STL38N65M5 en.DM00056210.pdf
STL38N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
товару немає в наявності
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STL60N10F7 en.DM00081178.pdf
STL60N10F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+43.58 грн
6000+39.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STNS01PUR en.DM00085223.pdf
STNS01PUR
Виробник: STMicroelectronics
Description: IC BATT CHG LI-ION 1CELL 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-DFN (3x3)
Charge Current - Max: 220mA
Fault Protection: Over Current, Over Temperature, Short Circuit
Voltage - Supply (Max): 5.4V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+74.40 грн
6000+70.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STR2N2VH5 en.DM00068028.pdf
STR2N2VH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 20V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+29.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STF13NM60ND STx13NM60ND_DS.pdf
STF13NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 662 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+209.59 грн
50+136.77 грн
100+136.43 грн
500+123.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF18NM60ND en.DM00085221.pdf
STF18NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
товару немає в наявності
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STFI5N95K3 STFI5N95K3_ds.pdf
STFI5N95K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 4A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: I2PAKFP (TO-281)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
на замовлення 695 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.33 грн
10+153.05 грн
100+121.81 грн
500+96.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STFI8N80K5 en.DM00080811.pdf
STFI8N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 6A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
товару немає в наявності
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STGIPN3H60-H en.DM00074234.pdf
STGIPN3H60-H
Виробник: STMicroelectronics
Description: MOD IGBT SLLIMM NANO 26-NDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (0.846", 21.48mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1000Vrms
Part Status: Obsolete
Current: 3 A
Voltage: 600 V
товару немає в наявності
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STGIPS10K60T-H en.DM00075077.pdf
STGIPS10K60T-H
Виробник: STMicroelectronics
Description: MOD IGBT SLLIMM 10A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
товару немає в наявності
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