Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (129411) > Сторінка 356 з 2157
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ISO8200BTR | STMicroelectronics |
Description: IC PWR DRIVER 1:1 PWRSO36Ratio - Input:Output: 1:1 Current - Output (Max): 700mA Voltage - Load: 10.5V ~ 36V Rds On (Typ): 120mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 125°C (TJ) Switch Type: Relay, Solenoid Driver Interface: Parallel Number of Outputs: 8 Mounting Type: Surface Mount Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width) Features: Auto Restart, Galvanic Isolation, Status Flag Packaging: Cut Tape (CT) Fault Protection: Current Limiting (Fixed), Over Temperature Supplier Device Package: PowerSO-36 Slug Up |
на замовлення 867 шт: термін постачання 21-31 дні (днів) |
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LDFM50PT-TR | STMicroelectronics |
Description: IC REG LINEAR 5V 500MA PPAKProtection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 0.3V @ 500mA PSRR: 60dB ~ 52dB (120Hz ~ 100kHz) Part Status: Obsolete Control Features: Enable, Power Good Voltage - Output (Min/Fixed): 5V Supplier Device Package: PPAK Number of Regulators: 1 Voltage - Input (Max): 16V Current - Quiescent (Iq): 800 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Cut Tape (CT) |
товару немає в наявності |
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LED2472GBTR | STMicroelectronics |
Description: IC LED DRIVER LINEAR 72MA 48TQFPPackaging: Cut Tape (CT) Package / Case: 48-TQFP Exposed Pad Voltage - Output: 19V Mounting Type: Surface Mount Number of Outputs: 24 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Signage Current - Output / Channel: 72mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 48-TQFP-EP (7x7) Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
на замовлення 1911 шт: термін постачання 21-31 дні (днів) |
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STPSC6H12B-TR1 | STMicroelectronics |
Description: DIODE SIL CARBIDE 1200V 6A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 330pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
на замовлення 7403 шт: термін постачання 21-31 дні (днів) |
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STTH1512GY-TR | STMicroelectronics |
Description: DIODE STANDARD 1200V 15A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 984 шт: термін постачання 21-31 дні (днів) |
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ISO8200BTR | STMicroelectronics |
Description: IC PWR DRIVER 1:1 PWRSO36Features: Auto Restart, Galvanic Isolation, Status Flag Packaging: Tape & Reel (TR) Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width) Mounting Type: Surface Mount Number of Outputs: 8 Interface: Parallel Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 120mOhm Voltage - Load: 10.5V ~ 36V Current - Output (Max): 700mA Ratio - Input:Output: 1:1 Supplier Device Package: PowerSO-36 Slug Up Fault Protection: Current Limiting (Fixed), Over Temperature |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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L6395DTR | STMicroelectronics |
Description: IC GATE DRVR HALF-BRIDGE 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 75ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.9V Current - Peak Output (Source, Sink): 290mA, 430mA DigiKey Programmable: Not Verified |
товару немає в наявності |
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LDFM50PT-TR | STMicroelectronics |
Description: IC REG LINEAR 5V 500MA PPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 800 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: PPAK Voltage - Output (Min/Fixed): 5V Control Features: Enable, Power Good Part Status: Obsolete PSRR: 60dB ~ 52dB (120Hz ~ 100kHz) Voltage Dropout (Max): 0.3V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
товару немає в наявності |
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LDFMPT-TR | STMicroelectronics |
Description: IC REG LINEAR POS ADJ 500MA PPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 800 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: PPAK Voltage - Output (Max): 12V Voltage - Output (Min/Fixed): 0.8V Control Features: Enable, Power Good Part Status: Obsolete PSRR: 62dB ~ 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LED2472GBTR | STMicroelectronics |
Description: IC LED DRIVER LINEAR 72MA 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Voltage - Output: 19V Mounting Type: Surface Mount Number of Outputs: 24 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Signage Current - Output / Channel: 72mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 48-TQFP-EP (7x7) Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPSC6H12B-TR1 | STMicroelectronics |
Description: DIODE SIL CARBIDE 1200V 6A DPAKCurrent - Reverse Leakage @ Vr: 400 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: DPAK Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 330pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STTH1512GY-TR | STMicroelectronics |
Description: DIODE STANDARD 1200V 15A D2PAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 15 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io): 15A Technology: Standard Reverse Recovery Time (trr): 105 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
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STTH30R04DY | STMicroelectronics |
Description: DIODE STANDARD 400V 30A TO220ACPackage / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 15 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 100 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Qualification: AEC-Q101 Grade: Automotive |
на замовлення 762 шт: термін постачання 21-31 дні (днів) |
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SMP1100SCMC | STMicroelectronics |
Description: THYRISTOR 90V 100A DO-214AACurrent - Peak Pulse (10/1000µs): 100 A Current - Hold (Ih): 150 mA Supplier Device Package: SMB Voltage - Off State: 90V Voltage - Breakover: 130V Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Capacitance: 70pF Packaging: Tape & Reel (TR) |
товару немає в наявності |
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STB26NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 21A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V |
товару немає в наявності |
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STD2N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STD2N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 2A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STD3N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2.5A DPAKInput Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STD5N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 3.5A DPAKInput Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STL24N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 18A PWRFLAT HVPackaging: Tape & Reel (TR) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 9A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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STPS3L45AF | STMicroelectronics |
Description: DIODE SCHOTTKY 45V 3A SMAFLATPackaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMAflat Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 45 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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STF15N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 12A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 974 шт: термін постачання 21-31 дні (днів) |
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STF26NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 21A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STF28N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 24A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V |
на замовлення 83 шт: термін постачання 21-31 дні (днів) |
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STF2N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V |
на замовлення 826 шт: термін постачання 21-31 дні (днів) |
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STF2N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 2A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): 30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 2110 шт: термін постачання 21-31 дні (днів) |
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STF33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 26A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V |
на замовлення 702 шт: термін постачання 21-31 дні (днів) |
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STF3N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2.5A TO220FPMounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 1217 шт: термін постачання 21-31 дні (днів) |
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STF5N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 3.7A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STF5N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 3.5A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 963 шт: термін постачання 21-31 дні (днів) |
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STGF10H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 20A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.5ns/103ns Switching Energy: 83µJ (on), 140µJ (off) Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 30 W |
на замовлення 1760 шт: термін постачання 21-31 дні (днів) |
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STGF15H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 30A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24.5ns/118ns Switching Energy: 136µJ (on), 207µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 81 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 30 W |
на замовлення 702 шт: термін постачання 21-31 дні (днів) |
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STGP10H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 20A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.5ns/103ns Switching Energy: 83µJ (on), 140µJ (off) Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 115 W |
на замовлення 452 шт: термін постачання 21-31 дні (днів) |
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STGP15H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 30A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24.5ns/118ns Switching Energy: 136µJ (on), 207µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 81 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 115 W |
на замовлення 907 шт: термін постачання 21-31 дні (днів) |
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STP15N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 12A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
товару немає в наявності |
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STP26NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 21A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP28N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 24A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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STP2N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V |
на замовлення 1215 шт: термін постачання 21-31 дні (днів) |
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STP2N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 2A TO220Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): 30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 970 шт: термін постачання 21-31 дні (днів) |
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STP33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 26A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V |
на замовлення 280 шт: термін постачання 21-31 дні (днів) |
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STP3N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2.5A TO220Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 100µA |
на замовлення 985 шт: термін постачання 21-31 дні (днів) |
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STP40N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 1668 шт: термін постачання 21-31 дні (днів) |
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STP5N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 3.7A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP5N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 3.5A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STU2N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 2A IPAKInput Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): 30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251 (IPAK) Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STU3N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2.5A IPAKInput Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251 (IPAK) Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STU5N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 3.7A IPAK |
на замовлення 851 шт: термін постачання 21-31 дні (днів) |
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STW15N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 12A TO247Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW26NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 21A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW28N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 24A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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STW33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 26A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V |
на замовлення 745 шт: термін постачання 21-31 дні (днів) |
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STW70N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 68A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V |
на замовлення 354 шт: термін постачання 21-31 дні (днів) |
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LMV824AIYDT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14SOVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 70 mA Number of Circuits: 4 Part Status: Active Supplier Device Package: 14-SO Voltage - Input Offset: 800 µV Current - Input Bias: 60 nA Gain Bandwidth Product: 5.5 MHz Qualification: AEC-Q100 Grade: Automotive Slew Rate: 1.9V/µs Current - Supply: 300µA (x4 Channels) Operating Temperature: -40°C ~ 125°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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LMV824IYDT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14SOVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 70 mA Number of Circuits: 4 Part Status: Active Supplier Device Package: 14-SO Voltage - Input Offset: 3.5 mV Current - Input Bias: 60 nA Gain Bandwidth Product: 5.5 MHz Slew Rate: 1.9V/µs Current - Supply: 300µA (x4 Channels) Operating Temperature: -40°C ~ 125°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
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| LD39130SJ10R | STMicroelectronics |
Description: IC REG LIN 1V 300MA 4-FLIPCHIPProtection Features: Over Current, Over Temperature, Soft Start PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1V Supplier Device Package: 4-FlipChip (.69x.69) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 45 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UFBGA, FCBGA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LD39130SJ12R | STMicroelectronics |
Description: IC REG LIN 1.2V 300MA 4-FLIPCHIPPackaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-FlipChip (.69x.69) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Part Status: Active PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Protection Features: Over Current, Over Temperature, Soft Start |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| LD39130SJ18R | STMicroelectronics |
Description: IC REG LIN 1.8V 300MA 4-FLIPCHIPPackaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-FlipChip (.69x.69) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Protection Features: Over Current, Over Temperature, Soft Start |
на замовлення 27777 шт: термін постачання 21-31 дні (днів) |
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| LD39130SJ25R | STMicroelectronics |
Description: IC REG LIN 2.5V 300MA 4-FLIPCHIPProtection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.3V @ 300mA (Typ) PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 4-FlipChip (.69x.69) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 45 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UFBGA, FCBGA Packaging: Cut Tape (CT) |
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В кошику од. на суму грн. | |||||||||||||||||
| LD39130SJ29R | STMicroelectronics |
Description: IC REG LIN 2.9V 300MA 4-FLIPCHIPSupplier Device Package: 4-FlipChip (.69x.69) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 45 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UFBGA, FCBGA Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.3V @ 300mA (Typ) PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.9V |
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| LD39130SJ30R | STMicroelectronics |
Description: IC REG LIN 3V 300MA 4-FLIPCHIPPackaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-FlipChip (.69x.69) Voltage - Output (Min/Fixed): 3V Control Features: Enable Part Status: Active PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 300mA (Typ) Protection Features: Over Current, Over Temperature, Soft Start |
на замовлення 15708 шт: термін постачання 21-31 дні (днів) |
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| ISO8200BTR |
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Виробник: STMicroelectronics
Description: IC PWR DRIVER 1:1 PWRSO36
Ratio - Input:Output: 1:1
Current - Output (Max): 700mA
Voltage - Load: 10.5V ~ 36V
Rds On (Typ): 120mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: Relay, Solenoid Driver
Interface: Parallel
Number of Outputs: 8
Mounting Type: Surface Mount
Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width)
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Cut Tape (CT)
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: PowerSO-36 Slug Up
Description: IC PWR DRIVER 1:1 PWRSO36
Ratio - Input:Output: 1:1
Current - Output (Max): 700mA
Voltage - Load: 10.5V ~ 36V
Rds On (Typ): 120mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: Relay, Solenoid Driver
Interface: Parallel
Number of Outputs: 8
Mounting Type: Surface Mount
Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width)
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Cut Tape (CT)
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: PowerSO-36 Slug Up
на замовлення 867 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 602.75 грн |
| 10+ | 450.76 грн |
| 25+ | 418.36 грн |
| 100+ | 359.20 грн |
| 250+ | 343.27 грн |
| LDFM50PT-TR |
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Виробник: STMicroelectronics
Description: IC REG LINEAR 5V 500MA PPAK
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.3V @ 500mA
PSRR: 60dB ~ 52dB (120Hz ~ 100kHz)
Part Status: Obsolete
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PPAK
Number of Regulators: 1
Voltage - Input (Max): 16V
Current - Quiescent (Iq): 800 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 5V 500MA PPAK
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.3V @ 500mA
PSRR: 60dB ~ 52dB (120Hz ~ 100kHz)
Part Status: Obsolete
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PPAK
Number of Regulators: 1
Voltage - Input (Max): 16V
Current - Quiescent (Iq): 800 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
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| LED2472GBTR |
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Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 72MA 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 24
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Signage
Current - Output / Channel: 72mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 48-TQFP-EP (7x7)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRIVER LINEAR 72MA 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 24
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Signage
Current - Output / Channel: 72mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 48-TQFP-EP (7x7)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
на замовлення 1911 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 217.12 грн |
| 10+ | 156.54 грн |
| 25+ | 143.44 грн |
| 100+ | 121.13 грн |
| 250+ | 114.69 грн |
| 500+ | 110.80 грн |
| 1000+ | 105.84 грн |
| STPSC6H12B-TR1 |
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Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 1200V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Description: DIODE SIL CARBIDE 1200V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 7403 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 285.31 грн |
| 10+ | 176.32 грн |
| 100+ | 137.51 грн |
| 500+ | 106.86 грн |
| 1000+ | 101.46 грн |
| STTH1512GY-TR |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1200V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 984 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.09 грн |
| 10+ | 123.18 грн |
| 100+ | 86.89 грн |
| 500+ | 67.87 грн |
| ISO8200BTR |
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Виробник: STMicroelectronics
Description: IC PWR DRIVER 1:1 PWRSO36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Voltage - Load: 10.5V ~ 36V
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSO-36 Slug Up
Fault Protection: Current Limiting (Fixed), Over Temperature
Description: IC PWR DRIVER 1:1 PWRSO36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Voltage - Load: 10.5V ~ 36V
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSO-36 Slug Up
Fault Protection: Current Limiting (Fixed), Over Temperature
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 600+ | 327.71 грн |
| L6395DTR |
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Виробник: STMicroelectronics
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.9V
Current - Peak Output (Source, Sink): 290mA, 430mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.9V
Current - Peak Output (Source, Sink): 290mA, 430mA
DigiKey Programmable: Not Verified
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| LDFM50PT-TR |
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Виробник: STMicroelectronics
Description: IC REG LINEAR 5V 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 60dB ~ 52dB (120Hz ~ 100kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 5V 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 60dB ~ 52dB (120Hz ~ 100kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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| LDFMPT-TR |
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Виробник: STMicroelectronics
Description: IC REG LINEAR POS ADJ 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR POS ADJ 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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| LED2472GBTR |
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Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 72MA 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 24
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Signage
Current - Output / Channel: 72mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 48-TQFP-EP (7x7)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRIVER LINEAR 72MA 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 24
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Signage
Current - Output / Channel: 72mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 48-TQFP-EP (7x7)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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| STPSC6H12B-TR1 |
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Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 1200V 6A DPAK
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARBIDE 1200V 6A DPAK
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 109.17 грн |
| STTH1512GY-TR |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 15A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 105 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 1200V 15A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 105 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| STTH30R04DY |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 400V 30A TO220AC
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STANDARD 400V 30A TO220AC
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Qualification: AEC-Q101
Grade: Automotive
на замовлення 762 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.30 грн |
| 50+ | 88.07 грн |
| 100+ | 86.12 грн |
| SMP1100SCMC |
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Виробник: STMicroelectronics
Description: THYRISTOR 90V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - Off State: 90V
Voltage - Breakover: 130V
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 70pF
Packaging: Tape & Reel (TR)
Description: THYRISTOR 90V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - Off State: 90V
Voltage - Breakover: 130V
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 70pF
Packaging: Tape & Reel (TR)
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| STB26NM60ND |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STD2N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
Description: MOSFET N-CH 800V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 37.33 грн |
| 5000+ | 33.52 грн |
| STD2N95K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Description: MOSFET N-CH 950V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STD3N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 800V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 38.17 грн |
| 5000+ | 34.24 грн |
| STD5N95K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 950V 3.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 47.87 грн |
| STL24N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 18A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Description: MOSFET N-CH 600V 18A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 85.34 грн |
| 6000+ | 81.25 грн |
| STPS3L45AF |
![]() |
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 3A SMAFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAflat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Description: DIODE SCHOTTKY 45V 3A SMAFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAflat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.78 грн |
| 20000+ | 6.01 грн |
| 30000+ | 5.74 грн |
| STF15N95K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 950V 12A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 974 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 342.53 грн |
| 50+ | 171.68 грн |
| 100+ | 156.38 грн |
| 500+ | 121.57 грн |
| STF26NM60ND |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STF28N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
Description: MOSFET N-CH 600V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
на замовлення 83 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 275.12 грн |
| 50+ | 134.53 грн |
| STF2N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
Description: MOSFET N-CH 800V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
на замовлення 826 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.25 грн |
| 50+ | 61.76 грн |
| 100+ | 55.27 грн |
| 500+ | 41.21 грн |
| STF2N95K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 2A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 950V 2A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 2110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 116.79 грн |
| 50+ | 89.83 грн |
| 100+ | 71.20 грн |
| 500+ | 56.63 грн |
| 1000+ | 46.13 грн |
| 2000+ | 43.43 грн |
| STF33N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
Description: MOSFET N-CH 600V 26A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
на замовлення 702 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 288.44 грн |
| 50+ | 141.72 грн |
| 100+ | 128.52 грн |
| 500+ | 98.90 грн |
| STF3N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A TO220FP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 800V 2.5A TO220FP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 1217 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 185.76 грн |
| 50+ | 87.96 грн |
| 100+ | 79.09 грн |
| 500+ | 59.62 грн |
| 1000+ | 54.92 грн |
| STF5N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 3.7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
Description: MOSFET N-CH 600V 3.7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
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В кошику
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| STF5N95K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 950V 3.5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 963 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.82 грн |
| 50+ | 103.98 грн |
| 100+ | 85.55 грн |
| 500+ | 67.93 грн |
| STGF10H60DF |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 30 W
Description: IGBT TRENCH FS 600V 20A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 30 W
на замовлення 1760 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.87 грн |
| 50+ | 65.89 грн |
| 100+ | 58.99 грн |
| 500+ | 43.97 грн |
| 1000+ | 40.31 грн |
| STGF15H60DF |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 30A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
Description: IGBT TRENCH FS 600V 30A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
на замовлення 702 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.41 грн |
| 50+ | 72.20 грн |
| 100+ | 64.73 грн |
| 500+ | 48.44 грн |
| STGP10H60DF |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
Description: IGBT TRENCH FS 600V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
на замовлення 452 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.63 грн |
| 50+ | 71.98 грн |
| 100+ | 64.52 грн |
| STGP15H60DF |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
Description: IGBT TRENCH FS 600V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
на замовлення 907 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.87 грн |
| 50+ | 80.54 грн |
| 100+ | 72.33 грн |
| 500+ | 54.37 грн |
| STP15N95K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 950V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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В кошику
од. на суму грн.
| STP26NM60ND |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
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В кошику
од. на суму грн.
| STP28N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 268.85 грн |
| 50+ | 131.32 грн |
| STP2N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
Description: MOSFET N-CH 800V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
на замовлення 1215 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.49 грн |
| 50+ | 55.42 грн |
| 100+ | 49.45 грн |
| 500+ | 36.59 грн |
| 1000+ | 33.43 грн |
| STP2N95K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 2A TO220
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 950V 2A TO220
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 162.25 грн |
| 50+ | 75.60 грн |
| 100+ | 67.76 грн |
| 500+ | 50.67 грн |
| STP33N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
Description: MOSFET N-CH 600V 26A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
на замовлення 280 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 341.74 грн |
| 50+ | 170.11 грн |
| 100+ | 154.77 грн |
| STP3N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A TO220
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
Description: MOSFET N-CH 800V 2.5A TO220
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
на замовлення 985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.82 грн |
| 50+ | 71.93 грн |
| 100+ | 68.14 грн |
| 500+ | 51.05 грн |
| STP40N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 409.15 грн |
| 50+ | 207.34 грн |
| 100+ | 189.31 грн |
| 500+ | 148.00 грн |
| 1000+ | 138.48 грн |
| STP5N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 3.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
Description: MOSFET N-CH 600V 3.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
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| STP5N95K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Description: MOSFET N-CH 950V 3.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
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| STU2N95K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 950V 2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| STU3N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 800V 2.5A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| STU5N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 3.7A IPAK
Description: MOSFET N-CH 600V 3.7A IPAK
на замовлення 851 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 108.17 грн |
| 10+ | 92.84 грн |
| 100+ | 72.38 грн |
| 500+ | 56.11 грн |
| STW15N95K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 950V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| STW26NM60ND |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
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| STW28N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
на замовлення 122 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 304.12 грн |
| 30+ | 162.18 грн |
| 120+ | 133.18 грн |
| STW33N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
Description: MOSFET N-CH 600V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
на замовлення 745 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 409.94 грн |
| 30+ | 222.91 грн |
| 120+ | 185.18 грн |
| 510+ | 147.81 грн |
| STW70N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
на замовлення 354 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 642.73 грн |
| 30+ | 365.54 грн |
| 120+ | 309.85 грн |
| LMV824AIYDT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 70 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 800 µV
Current - Input Bias: 60 nA
Gain Bandwidth Product: 5.5 MHz
Qualification: AEC-Q100
Grade: Automotive
Slew Rate: 1.9V/µs
Current - Supply: 300µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 70 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 800 µV
Current - Input Bias: 60 nA
Gain Bandwidth Product: 5.5 MHz
Qualification: AEC-Q100
Grade: Automotive
Slew Rate: 1.9V/µs
Current - Supply: 300µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 69.77 грн |
| 5000+ | 65.73 грн |
| LMV824IYDT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 70 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 3.5 mV
Current - Input Bias: 60 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 1.9V/µs
Current - Supply: 300µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 70 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 3.5 mV
Current - Input Bias: 60 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 1.9V/µs
Current - Supply: 300µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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| LD39130SJ10R |
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Виробник: STMicroelectronics
Description: IC REG LIN 1V 300MA 4-FLIPCHIP
Protection Features: Over Current, Over Temperature, Soft Start
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Description: IC REG LIN 1V 300MA 4-FLIPCHIP
Protection Features: Over Current, Over Temperature, Soft Start
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
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| LD39130SJ12R |
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Виробник: STMicroelectronics
Description: IC REG LIN 1.2V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LIN 1.2V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.95 грн |
| 10+ | 34.72 грн |
| 25+ | 31.19 грн |
| 100+ | 25.65 грн |
| 250+ | 23.91 грн |
| 500+ | 22.86 грн |
| 1000+ | 21.64 грн |
| 2500+ | 21.56 грн |
| LD39130SJ18R |
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Виробник: STMicroelectronics
Description: IC REG LIN 1.8V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LIN 1.8V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
на замовлення 27777 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.49 грн |
| 10+ | 43.63 грн |
| 25+ | 39.31 грн |
| 100+ | 32.46 грн |
| 250+ | 30.34 грн |
| 500+ | 29.06 грн |
| 1000+ | 27.69 грн |
| LD39130SJ25R |
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Виробник: STMicroelectronics
Description: IC REG LIN 2.5V 300MA 4-FLIPCHIP
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Description: IC REG LIN 2.5V 300MA 4-FLIPCHIP
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
товару немає в наявності
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| LD39130SJ29R |
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Виробник: STMicroelectronics
Description: IC REG LIN 2.9V 300MA 4-FLIPCHIP
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.9V
Description: IC REG LIN 2.9V 300MA 4-FLIPCHIP
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.9V
товару немає в наявності
В кошику
од. на суму грн.
| LD39130SJ30R |
![]() |
Виробник: STMicroelectronics
Description: IC REG LIN 3V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LIN 3V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
на замовлення 15708 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.08 грн |
| 10+ | 36.98 грн |
| 25+ | 33.21 грн |
| 100+ | 27.33 грн |
| 250+ | 25.49 грн |
| 500+ | 24.39 грн |
| 1000+ | 23.10 грн |
| 2500+ | 23.06 грн |

















