Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25771) > Сторінка 252 з 430
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TS5205CX550 RFG | Taiwan Semiconductor Corporation |
 Description: IC REG LINEAR 5V 150MA SOT-25Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 125 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit, Enable Part Status: Active PSRR: 75dB (100Hz) Voltage Dropout (Max): 0.275V @ 150mA Protection Features: Over Temperature Current - Supply (Max): 1.9 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TS5205CX550 RFG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 150MA SOT-25 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 125 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit, Enable Part Status: Active PSRR: 75dB (100Hz) Voltage Dropout (Max): 0.275V @ 150mA Protection Features: Over Temperature Current - Supply (Max): 1.9 mA |
на замовлення 6112 шт: термін постачання 21-31 дні (днів) |
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MBR3090CT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 90V TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR3090CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 90V TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMF7.5AHRQG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.5VWM 12.9VC SOD123W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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SMF7.5AHRQG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.5VWM 12.9VC SOD123W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SA7.5AH | Taiwan Semiconductor Corporation | Description: TVS 500W 8.8V 5% DO-15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SA7.5AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.5VWM 12.9VC DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4SMA24AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20.5VWM 33.2V DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 12.6A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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P4SMA24CA | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20.5VWM 33.2V DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.6A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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P4SMA24CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 20.5VWM 33.2V DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 12.6A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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MBR1635H | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 35V 16A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A Current - Reverse Leakage @ Vr: 500 µA @ 35 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX585B3V0 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3V 200MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 1.5SMC43AH | Taiwan Semiconductor Corporation | Description: TVS DIODE 36.8VWM 59.3VC DO214AB |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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1.5SMC43A R6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC43A R6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC43A R7 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HER102G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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ES2F | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 300V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ES2FAH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 300V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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ES2FA | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 300V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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ES2FH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 300V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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S1JLH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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S1JLH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 29696 шт: термін постачання 21-31 дні (днів) |
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.jpg "S1JAL") |
S1JAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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S1JAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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S1JALH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
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S1JALH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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S1JLS RVG | Taiwan Semiconductor Corporation |
Description: DIODE GP 600V 1.2A SOD123HE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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S1JLS RVG | Taiwan Semiconductor Corporation |
Description: DIODE GP 600V 1.2A SOD123HE Packaging: Cut Tape (CT) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 11945 шт: термін постачання 21-31 дні (днів) |
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UG8JH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TSM60N750CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 6A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM60N750CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 6A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM60N750CH C5G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 6A TO251 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSN520M60 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 20A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: 8-PDFN (5x6) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||
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TSN520M60 S4G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 60V 20A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: 8-PDFN (5x6) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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MUR140SH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MUR140S | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 400 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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GBPC25005W T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 50V 25A GBPC-W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBPC25005 T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 50V 25A GBPC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBPC25005M T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 50V 25A GBPC-M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TS40P06G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 40A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 864 шт: термін постачання 21-31 дні (днів) |
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SA12CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 12VWM 19.9VC DO204AC |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
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SF1004G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ150CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 150VWM 243VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1.3A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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SMAJ150CA R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 150VWM 243VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.3A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
ESH3DFSH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 3A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 42pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
ESH3DFSH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 3A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 42pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 13773 шт: термін постачання 21-31 дні (днів) |
|
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ESH3D R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ESH3D R6G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ESH3D M6 | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ESH3D R7 | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ESH3D R6 | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
|
ESH3D V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
SK32AHM2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 3A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
TSF20U60C | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 60V 10A ITO220AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
TST20U60CW | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
 |
GBU402H | Taiwan Semiconductor Corporation |
Description: DIODE BRIDGE 4A 100V GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
GBU403 | Taiwan Semiconductor Corporation |
Description: DIODE BRIDGE 4A 200V GBU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
GBU403H | Taiwan Semiconductor Corporation |
Description: DIODE BRIDGE 4A 200V GBU |
товару немає в наявності |
В кошику од. на суму грн. |
| TS5205CX550 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 150MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.275V @ 150mA
Protection Features: Over Temperature
Current - Supply (Max): 1.9 mA
Description: IC REG LINEAR 5V 150MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.275V @ 150mA
Protection Features: Over Temperature
Current - Supply (Max): 1.9 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.82 грн |
| TS5205CX550 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 150MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.275V @ 150mA
Protection Features: Over Temperature
Current - Supply (Max): 1.9 mA
Description: IC REG LINEAR 5V 150MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.275V @ 150mA
Protection Features: Over Temperature
Current - Supply (Max): 1.9 mA
на замовлення 6112 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.09 грн |
| 12+ | 25.83 грн |
| 25+ | 23.08 грн |
| 100+ | 18.85 грн |
| 250+ | 17.51 грн |
| 500+ | 16.70 грн |
| 1000+ | 15.77 грн |
| MBR3090CT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 90V TO220AB
Description: DIODE ARRAY SCHOTTKY 90V TO220AB
товару немає в наявності
В кошику
од. на суму грн.
| MBR3090CTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 90V TO220AB
Description: DIODE ARRAY SCHOTTKY 90V TO220AB
товару немає в наявності
В кошику
од. на суму грн.
| SMF7.5AHRQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.5VWM 12.9VC SOD123W
Description: TVS DIODE 7.5VWM 12.9VC SOD123W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SMF7.5AHRQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.5VWM 12.9VC SOD123W
Description: TVS DIODE 7.5VWM 12.9VC SOD123W
товару немає в наявності
В кошику
од. на суму грн.
| SA7.5AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS 500W 8.8V 5% DO-15
Description: TVS 500W 8.8V 5% DO-15
товару немає в наявності
В кошику
од. на суму грн.
| SA7.5AHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.5VWM 12.9VC DO204AC
Description: TVS DIODE 7.5VWM 12.9VC DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA24AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5VWM 33.2V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20.5VWM 33.2V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| P4SMA24CA |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5VWM 33.2V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| P4SMA24CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5VWM 33.2V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20.5VWM 33.2V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| MBR1635H |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 35V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZX585B3V0 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 200MW SOD523F
Description: DIODE ZENER 3V 200MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC43AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 1.5SMC43A R6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC43A R6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC43A R7 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| HER102G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ES2F |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.73 грн |
| ES2FAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Description: DIODE STANDARD 300V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 8.33 грн |
| ES2FA |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE STANDARD 300V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| ES2FH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.73 грн |
| S1JLH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.60 грн |
| S1JLH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 29696 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.29 грн |
| 12+ | 26.97 грн |
| 100+ | 15.26 грн |
| 500+ | 9.48 грн |
| 1000+ | 7.27 грн |
| 2000+ | 6.32 грн |
| 5000+ | 5.60 грн |
| S1JAL |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| S1JAL |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.33 грн |
| 13+ | 23.76 грн |
| 100+ | 13.48 грн |
| 500+ | 8.38 грн |
| 1000+ | 6.42 грн |
| 2000+ | 5.58 грн |
| 5000+ | 4.94 грн |
| S1JALH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| S1JALH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| S1JLS RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.71 грн |
| 6000+ | 8.78 грн |
| S1JLS RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 11945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.12 грн |
| 12+ | 26.67 грн |
| 100+ | 18.13 грн |
| 500+ | 12.76 грн |
| 1000+ | 9.57 грн |
| UG8JH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 105.54 грн |
| 10+ | 63.65 грн |
| 100+ | 42.18 грн |
| 500+ | 30.94 грн |
| 1000+ | 28.15 грн |
| TSM60N750CP ROG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO252
Description: MOSFET N-CHANNEL 600V 6A TO252
товару немає в наявності
В кошику
од. на суму грн.
| TSM60N750CP ROG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO252
Description: MOSFET N-CHANNEL 600V 6A TO252
товару немає в наявності
В кошику
од. на суму грн.
| TSM60N750CH C5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO251
Description: MOSFET N-CHANNEL 600V 6A TO251
товару немає в наявності
В кошику
од. на суму грн.
| TSN520M60 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: 8-PDFN (5x6)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: 8-PDFN (5x6)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 12000 шт
В кошику
од. на суму грн.
| TSN520M60 S4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 60V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: 8-PDFN (5x6)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE STANDARD 60V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: 8-PDFN (5x6)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MUR140SH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.21 грн |
| 6000+ | 6.78 грн |
| MUR140S |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.21 грн |
| 6000+ | 6.78 грн |
| GBPC25005W T0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 25A GBPC-W
Description: BRIDGE RECT 1P 50V 25A GBPC-W
товару немає в наявності
В кошику
од. на суму грн.
| GBPC25005 T0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 25A GBPC
Description: BRIDGE RECT 1PHASE 50V 25A GBPC
товару немає в наявності
В кошику
од. на суму грн.
| GBPC25005M T0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 25A GBPC-M
Description: BRIDGE RECT 1P 50V 25A GBPC-M
товару немає в наявності
В кошику
од. на суму грн.
| TS40P06G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 864 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.84 грн |
| 10+ | 149.38 грн |
| 50+ | 114.48 грн |
| 100+ | 96.88 грн |
| 500+ | 78.36 грн |
| SA12CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO204AC
Description: TVS DIODE 12VWM 19.9VC DO204AC
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| SF1004G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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| SMAJ150CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SMAJ150CA R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
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| ESH3DFSH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| ESH3DFSH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 3A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 13773 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.09 грн |
| 11+ | 28.50 грн |
| 100+ | 18.51 грн |
| 500+ | 13.86 грн |
| 1000+ | 10.04 грн |
| 2000+ | 9.73 грн |
| 5000+ | 9.24 грн |
| ESH3D R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
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В кошику
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| ESH3D R6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
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В кошику
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| ESH3D M6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
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В кошику
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| ESH3D R7 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
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В кошику
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| ESH3D R6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
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В кошику
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| ESH3D V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
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| SK32AHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO214AC
Description: DIODE SCHOTTKY 20V 3A DO214AC
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| TSF20U60C |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Description: DIODE ARR SCHOT 60V 10A ITO220AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| TST20U60CW |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| GBU402H |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 100V GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE BRIDGE 4A 100V GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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| GBU403 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 200V GBU
Description: DIODE BRIDGE 4A 200V GBU
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| GBU403H |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 200V GBU
Description: DIODE BRIDGE 4A 200V GBU
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