Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (62018) > Сторінка 1020 з 1034
Фото | Назва | Виробник | Інформація |
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BZT52C47 RHG | Taiwan Semiconductor | Zener Diode Single 47V 5% 100Ohm 500mW 2-Pin SOD-123F T/R |
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BZT52C47 RH | Taiwan Semiconductor | Zener Diode Single 47V 5% 100Ohm 500mW 2-Pin SOD-123F T/R |
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S4M V7G | Taiwan Semiconductor | Diode Switching 1KV 4A 2-Pin SMC T/R |
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TS19452CS RLG | Taiwan Semiconductor | LED Driver 400uA Supply Current 8-Pin SOP T/R |
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HS2G M4G | Taiwan Semiconductor | Diode Switching 400V 2A 2-Pin SMB |
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BZX55B12 A0G | Taiwan Semiconductor | Zener Diode Single 12V 2% 20Ohm 500mW 2-Pin DO-35 Ammo |
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TS20P07G | Taiwan Semiconductor | Diode Rectifier Bridge Single 1KV 20A 4-Pin TS-6P |
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SMCJ48A | Taiwan Semiconductor | TVS Diode Single Uni-Dir 48V 1.5KW 2-Pin SMC |
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TESDC5V0 RRG | Taiwan Semiconductor | Bi-directional ESD Protection Diode |
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TESDL3V3B23P1Q0 M3G | Taiwan Semiconductor | DFN0603-2L, 3.3V, 70W, 17pF, ESD Protection Diode & Array |
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SMDJ33CAH | Taiwan Semiconductor | TVS Diode Single Bi-Dir 33V 3KW Automotive 2-Pin SMC T/R |
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ES2D M4G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Capacitance: 25pF Case: SMB Max. forward voltage: 0.95V Max. forward impulse current: 50A Kind of package: reel; tape |
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BC548B B1G | TAIWAN SEMICONDUCTOR |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 500mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Pulsed collector current: 0.2A Current gain: 200...450 Mounting: THT Kind of package: bulk |
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BC548C B1G | TAIWAN SEMICONDUCTOR |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Pulsed collector current: 0.2A Current gain: 420...800 Mounting: THT Kind of package: bulk |
на замовлення 1100 шт: термін постачання 21-30 дні (днів) |
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SS14 M2G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMA Kind of package: reel; tape Max. forward impulse current: 40A |
на замовлення 540 шт: термін постачання 21-30 дні (днів) |
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SS14L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: subSMA Kind of package: reel; tape Max. forward impulse current: 30A |
на замовлення 9550 шт: термін постачання 21-30 дні (днів) |
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SS14L R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: subSMA Kind of package: reel; tape Max. forward impulse current: 30A |
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SS14M RS | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; microSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Capacitance: 50pF Max. forward voltage: 0.55V Case: microSMA Kind of package: reel; tape Max. forward impulse current: 25A |
на замовлення 335 шт: термін постачання 21-30 дні (днів) |
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TSM850N06CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.3A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced |
на замовлення 187 шт: термін постачання 21-30 дні (днів) |
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SS36 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Case: SMC Kind of package: reel; tape Max. forward impulse current: 70A |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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RMB6S RCG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 30A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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1.5KE100CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 137V Breakdown voltage: 100V Max. forward impulse current: 11.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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SS24M RS | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; microSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.6V Case: microSMA Kind of package: reel; tape Max. forward impulse current: 25A |
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TSS54U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603 Mounting: SMD Case: 0603 Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 0.3A Type of diode: Schottky rectifying |
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TSM5NC50CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.2A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.2A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Gate charge: 15nC Kind of channel: enhanced |
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TSM60N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13nC Kind of channel: enhanced |
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TSM60N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13nC Kind of channel: enhanced |
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TSM60N600CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 13nC Kind of channel: enhanced |
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BAT54W RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Case: SOT323 Max. forward impulse current: 0.6A |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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BC549C B1G | TAIWAN SEMICONDUCTOR |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Pulsed collector current: 0.2A Current gain: 420...800 Mounting: THT Kind of package: bulk |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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BZX55C13 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 480 шт: термін постачання 21-30 дні (днів) |
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1.5KE6.8CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 6.8V; 150A; bidirectional; ±5%; DO201; 1.5kW Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10.5V Breakdown voltage: 6.8V Max. forward impulse current: 150A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1mA |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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MBR20100CT C0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.75V |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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TSM8N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.9A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 41nC Kind of channel: enhanced |
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TSM10N80CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 53nC Kind of channel: enhanced |
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TSM10N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 290W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 53nC Kind of channel: enhanced |
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SS16 M2G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.65V Case: SMA Kind of package: reel; tape Max. forward impulse current: 40A |
на замовлення 291 шт: термін постачання 21-30 дні (днів) |
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SS16L R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; subSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Case: subSMA Kind of package: reel; tape Max. forward impulse current: 30A |
на замовлення 610 шт: термін постачання 21-30 дні (днів) |
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SS16M RSG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; microSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Capacitance: 40pF Max. forward voltage: 0.6V Case: microSMA Kind of package: reel; tape Max. forward impulse current: 25A |
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BZX55B10 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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BZX55B12 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 930 шт: термін постачання 21-30 дні (днів) |
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BZX55B15 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 15V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1380 шт: термін постачання 21-30 дні (днів) |
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BZX55B18 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 18V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 580 шт: термін постачання 21-30 дні (днів) |
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BZX55B20 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 20V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
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BZX55B24 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 390 шт: термін постачання 21-30 дні (днів) |
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BZX55B27 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 27V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 575 шт: термін постачання 21-30 дні (днів) |
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BZX55B2V7 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; 5mA; DO35; single diode; Ir: 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 10µA |
на замовлення 1360 шт: термін постачання 21-30 дні (днів) |
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BZX55B3V0 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3V; 5mA; DO35; single diode; Ir: 4uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 4µA |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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BZX55B3V3 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.3V; 5mA; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 390 шт: термін постачання 21-30 дні (днів) |
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BZX55B3V6 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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BZX55B3V9 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.9V; 5mA; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
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BZX55B4V3 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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BZX55B4V7 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 1421 шт: термін постачання 21-30 дні (днів) |
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BZX55B5V1 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.1V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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BZX55B5V6 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.6V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Zener current: 5mA Mounting: THT Tolerance: ±2% Case: DO35 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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BZX55B6V2 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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BZX55C10 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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BZX55C10 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1510 шт: термін постачання 21-30 дні (днів) |
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BZX55C11 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 515 шт: термін постачання 21-30 дні (днів) |
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BZX55C12 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1194 шт: термін постачання 21-30 дні (днів) |
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BZT52C47 RHG |
Виробник: Taiwan Semiconductor
Zener Diode Single 47V 5% 100Ohm 500mW 2-Pin SOD-123F T/R
Zener Diode Single 47V 5% 100Ohm 500mW 2-Pin SOD-123F T/R
товар відсутній
BZT52C47 RH |
Виробник: Taiwan Semiconductor
Zener Diode Single 47V 5% 100Ohm 500mW 2-Pin SOD-123F T/R
Zener Diode Single 47V 5% 100Ohm 500mW 2-Pin SOD-123F T/R
товар відсутній
TS19452CS RLG |
Виробник: Taiwan Semiconductor
LED Driver 400uA Supply Current 8-Pin SOP T/R
LED Driver 400uA Supply Current 8-Pin SOP T/R
товар відсутній
BZX55B12 A0G |
Виробник: Taiwan Semiconductor
Zener Diode Single 12V 2% 20Ohm 500mW 2-Pin DO-35 Ammo
Zener Diode Single 12V 2% 20Ohm 500mW 2-Pin DO-35 Ammo
товар відсутній
TS20P07G |
Виробник: Taiwan Semiconductor
Diode Rectifier Bridge Single 1KV 20A 4-Pin TS-6P
Diode Rectifier Bridge Single 1KV 20A 4-Pin TS-6P
товар відсутній
TESDL3V3B23P1Q0 M3G |
Виробник: Taiwan Semiconductor
DFN0603-2L, 3.3V, 70W, 17pF, ESD Protection Diode & Array
DFN0603-2L, 3.3V, 70W, 17pF, ESD Protection Diode & Array
товар відсутній
SMDJ33CAH |
Виробник: Taiwan Semiconductor
TVS Diode Single Bi-Dir 33V 3KW Automotive 2-Pin SMC T/R
TVS Diode Single Bi-Dir 33V 3KW Automotive 2-Pin SMC T/R
товар відсутній
ES2D M4G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Capacitance: 25pF
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Capacitance: 25pF
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
товар відсутній
BC548B B1G |
Виробник: TAIWAN SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: THT
Kind of package: bulk
товар відсутній
BC548C B1G |
Виробник: TAIWAN SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Pulsed collector current: 0.2A
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Pulsed collector current: 0.2A
Current gain: 420...800
Mounting: THT
Kind of package: bulk
на замовлення 1100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 4.99 грн |
120+ | 2.97 грн |
380+ | 2.12 грн |
1040+ | 2.01 грн |
SS14 M2G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
на замовлення 540 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 29.81 грн |
30+ | 11.62 грн |
43+ | 8.11 грн |
100+ | 4.83 грн |
239+ | 3.36 грн |
500+ | 3.35 грн |
SS14L |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: subSMA
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: subSMA
Kind of package: reel; tape
Max. forward impulse current: 30A
на замовлення 9550 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 38.75 грн |
23+ | 15.08 грн |
33+ | 10.52 грн |
100+ | 6.3 грн |
176+ | 4.57 грн |
484+ | 4.29 грн |
SS14L R2 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: subSMA
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: subSMA
Kind of package: reel; tape
Max. forward impulse current: 30A
товар відсутній
SS14M RS |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.55V
Case: microSMA
Kind of package: reel; tape
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.55V
Case: microSMA
Kind of package: reel; tape
Max. forward impulse current: 25A
на замовлення 335 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 15.8 грн |
35+ | 10.79 грн |
100+ | 8.3 грн |
270+ | 7.82 грн |
TSM850N06CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
на замовлення 187 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 49.18 грн |
12+ | 29.89 грн |
25+ | 20.9 грн |
54+ | 14.95 грн |
148+ | 14.12 грн |
SS36 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 70A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 70A
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 23.85 грн |
25+ | 19.79 грн |
RMB6S RCG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 24.81 грн |
25+ | 20.76 грн |
1.5KE100CA R0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 137V
Breakdown voltage: 100V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 137V
Breakdown voltage: 100V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
на замовлення 120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 41.73 грн |
25+ | 14.39 грн |
30+ | 11.56 грн |
100+ | 10.79 грн |
SS24M RS |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: microSMA
Kind of package: reel; tape
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: microSMA
Kind of package: reel; tape
Max. forward impulse current: 25A
товар відсутній
TSS54U RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603
Mounting: SMD
Case: 0603
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.3A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603
Mounting: SMD
Case: 0603
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.3A
Type of diode: Schottky rectifying
товар відсутній
TSM5NC50CF C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.2A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.2A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
товар відсутній
TSM60N600CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of channel: enhanced
товар відсутній
TSM60N600CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of channel: enhanced
товар відсутній
TSM60N600CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
товар відсутній
BAT54W RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Case: SOT323
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Case: SOT323
Max. forward impulse current: 0.6A
на замовлення 990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 4.99 грн |
100+ | 3.52 грн |
250+ | 2.8 грн |
305+ | 2.66 грн |
830+ | 2.51 грн |
BC549C B1G |
Виробник: TAIWAN SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Pulsed collector current: 0.2A
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Pulsed collector current: 0.2A
Current gain: 420...800
Mounting: THT
Kind of package: bulk
на замовлення 220 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 4.99 грн |
120+ | 2.97 грн |
BZX55C13 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
185+ | 1.9 грн |
1.5KE6.8CA R0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 6.8V; 150A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.5V
Breakdown voltage: 6.8V
Max. forward impulse current: 150A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1mA
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 6.8V; 150A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.5V
Breakdown voltage: 6.8V
Max. forward impulse current: 150A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1mA
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.44 грн |
MBR20100CT C0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 79.73 грн |
8+ | 45.94 грн |
22+ | 36.6 грн |
61+ | 34.6 грн |
TSM8N80CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhanced
товар відсутній
TSM10N80CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
товар відсутній
TSM10N80CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
товар відсутній
SS16 M2G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
на замовлення 291 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 13.41 грн |
70+ | 5.26 грн |
100+ | 4.72 грн |
225+ | 3.62 грн |
SS16L R2 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: subSMA
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: subSMA
Kind of package: reel; tape
Max. forward impulse current: 30A
на замовлення 610 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 14.16 грн |
55+ | 6.3 грн |
100+ | 5.67 грн |
185+ | 4.36 грн |
505+ | 4.15 грн |
SS16M RSG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 0.6V
Case: microSMA
Kind of package: reel; tape
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 0.6V
Case: microSMA
Kind of package: reel; tape
Max. forward impulse current: 25A
товар відсутній
BZX55B10 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
465+ | 1.74 грн |
1275+ | 1.65 грн |
BZX55B12 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 930 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
460+ | 1.74 грн |
BZX55B15 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1380 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
465+ | 1.74 грн |
1275+ | 1.65 грн |
BZX55B18 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 580 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
460+ | 1.76 грн |
BZX55B20 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
BZX55B24 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 390 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
BZX55B27 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 575 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
440+ | 1.85 грн |
BZX55B2V7 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 10µA
на замовлення 1360 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
465+ | 1.74 грн |
1275+ | 1.65 грн |
BZX55B3V0 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; DO35; single diode; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 4µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; DO35; single diode; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 4µA
на замовлення 150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
150+ | 2.08 грн |
BZX55B3V3 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 390 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
BZX55B3V6 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 210 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
BZX55B3V9 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
товар відсутній
BZX55B4V3 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 35 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 10.43 грн |
BZX55B4V7 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 1421 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
460+ | 1.74 грн |
1265+ | 1.65 грн |
BZX55B5V1 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
465+ | 1.74 грн |
BZX55B5V6 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: THT
Tolerance: ±2%
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: THT
Tolerance: ±2%
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 220 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
160+ | 2.19 грн |
BZX55B6V2 A0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 35 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 10.43 грн |
BZX55C10 R0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
100+ | 3.8 грн |
140+ | 2.53 грн |
420+ | 1.92 грн |
1160+ | 1.82 грн |
BZX55C10 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1510 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
185+ | 1.9 грн |
500+ | 1.68 грн |
530+ | 1.52 грн |
1455+ | 1.43 грн |
BZX55C11 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 515 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.46 грн |
185+ | 1.9 грн |
500+ | 1.68 грн |
505+ | 1.6 грн |
BZX55C12 R0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1194 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
133+ | 2.81 грн |
185+ | 1.88 грн |
500+ | 1.65 грн |
562+ | 1.43 грн |