Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (62142) > Сторінка 1031 з 1036
Фото | Назва | Виробник | Інформація |
Доступність |
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BZX84C5V6 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 836 шт: термін постачання 21-30 дні (днів) |
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TSS40U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; 0603; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Case: 0603 Kind of package: reel; tape Max. forward impulse current: 0.6A |
на замовлення 489 шт: термін постачання 21-30 дні (днів) |
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TSM60NB150CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 43nC Kind of channel: enhanced |
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BZT55C27 L1 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 27V; 5mA; SMD; reel,tape; MiniMELF quadro Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF quadro Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 7984 шт: термін постачання 21-30 дні (днів) |
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BZT55C6V2 L1 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.2V; 5mA; SMD; reel,tape; MiniMELF quadro Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF quadro Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 625 шт: термін постачання 21-30 дні (днів) |
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LL4004G L0G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; MELF plastic; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Case: MELF plastic Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
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GBU1005 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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GBU1007 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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BZD27C15P | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 15V; 25mA; SMD; reel,tape; subSMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Zener current: 25mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: subSMA Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 205 шт: термін постачання 21-30 дні (днів) |
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BZD27C15PW | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Zener current: 50mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 1µA |
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RMB4S RCG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.5A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 0.5A Max. forward impulse current: 30A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
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MBR1660 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; tube Case: TO220AC Mounting: THT Kind of package: tube Max. forward voltage: 0.75V Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 150A Type of diode: Schottky rectifying Max. off-state voltage: 60V |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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MBRF1645 C0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220FP-2; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 16A Max. load current: 32A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 150A |
на замовлення 600 шт: термін постачання 21-30 дні (днів) |
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TQM150NB04CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Power dissipation: 19W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 20nC Kind of channel: enhanced |
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TQM150NB04DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 9A; 16W; PDFN56U Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 9A Power dissipation: 16W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 25.5mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
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TSM150NB04CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 19nC Kind of channel: enhanced |
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TSM150NB04DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 8A Power dissipation: 8W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
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TSM150NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
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TS358CD C3G | TAIWAN SEMICONDUCTOR |
Category: THT operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 0.4V/μs Operating temperature: 0...70°C Input offset voltage: 9mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: tube Input bias current: 0.5µA Input offset current: 150nA |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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BZV55B3V9 L1G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 735 шт: термін постачання 21-30 дні (днів) |
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6A60G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V Case: R6 Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.6kV Features of semiconductor devices: glass passivated Max. forward voltage: 1V Capacitance: 60pF Load current: 6A Type of diode: rectifying Max. forward impulse current: 250A |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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TSZU52C2V2 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 2.2V; 5mA; SMD; reel,tape; 0603; single diode Case: 0603 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 2.2V Zener current: 5mA Leakage current: 0.1mA Power dissipation: 0.15W Type of diode: Zener |
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TS331CX5 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 1.3us; SMT; SOT25; reel,tape; 50nA Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Delay time: 1.3µs Mounting: SMT Case: SOT25 Operating temperature: -40...105°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 50nA Voltage supply range: ± 1...18V DC; 2...36V DC |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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P6SMB36A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12.6A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
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P6SMB36A R5G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12.6A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
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LL5818 L0 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; MELF plastic; reel,tape Case: MELF plastic Mounting: SMD Kind of package: reel; tape Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 25A Type of diode: Schottky rectifying Max. off-state voltage: 30V |
на замовлення 338 шт: термін постачання 21-30 дні (днів) |
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LL5818 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; MELF plastic Case: MELF plastic Mounting: SMD Max. forward voltage: 0.875V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 25A Type of diode: Schottky rectifying Max. off-state voltage: 30V |
на замовлення 611 шт: термін постачання 21-30 дні (днів) |
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BZT52C16 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 925 шт: термін постачання 21-30 дні (днів) |
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TSM60NB380CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP Power dissipation: 62.5W Gate charge: 21nC Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: TO220FP On-state resistance: 0.38Ω Mounting: THT |
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TSM60NB380CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK Power dissipation: 83W Gate charge: 19.4nC Polarisation: unipolar Drain current: 6A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: IPAK On-state resistance: 0.38Ω Mounting: THT |
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TSM60NB380CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK Power dissipation: 83W Gate charge: 19.4nC Polarisation: unipolar Drain current: 6A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: DPAK On-state resistance: 0.38Ω Mounting: SMD |
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GBU606 D2G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
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1.5KE91CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 91V; 12.6A; bidirectional; ±5%; DO201; 1.5kW Type of diode: TVS Max. off-state voltage: 125V Breakdown voltage: 91V Max. forward impulse current: 12.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW |
на замовлення 180 шт: термін постачання 21-30 дні (днів) |
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TSM4425CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 1.6W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Power dissipation: 1.6W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 64nC Kind of channel: enhanced |
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SS115 R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.95V Case: SMA Kind of package: reel; tape Max. forward impulse current: 40A |
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SS115L R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; subSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.9V Case: subSMA Kind of package: reel; tape Max. forward impulse current: 30A |
на замовлення 360 шт: термін постачання 21-30 дні (днів) |
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BZX55C6V2 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 310 шт: термін постачання 21-30 дні (днів) |
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BZX55C6V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1968 шт: термін постачання 21-30 дні (днів) |
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TS1935BCX5 RFG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.6...5.5V DC Output voltage: 3...27V DC Output current: 1.9A Case: SOT25 Mounting: SMD Frequency: 1.2MHz Topology: boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape Duty cycle factor: 0...87% |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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TESD5V0V4UA RDG | TAIWAN SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 5A; 95W; 2510P10; Features: ESD protection Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 5A Peak pulse power dissipation: 95W Mounting: SMD Case: 2510P10 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape Application: Ethernet; USB |
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BZX55C47 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 47V; 2.5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 47V Zener current: 2.5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 940 шт: термін постачання 21-30 дні (днів) |
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BZY55B15 RYG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 0805; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: 0805 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 819 шт: термін постачання 21-30 дні (днів) |
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BZT52C75 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 75V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 329 шт: термін постачання 21-30 дні (днів) |
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BZT52B7V5S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 7.5V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 7.5V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 0.9µA |
на замовлення 830 шт: термін постачання 21-30 дні (днів) |
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P6SMB200CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 471 шт: термін постачання 21-30 дні (днів) |
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P6SMB200CAHM4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
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TSM190N08CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 14A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 160nC Kind of channel: enhanced |
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P6KE82A R0 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: reel; tape |
на замовлення 4775 шт: термін постачання 21-30 дні (днів) |
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TESDU24V RGG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 47W; 25V; bidirectional; 0603; reel,tape Type of diode: TVS Peak pulse power dissipation: 47W Max. off-state voltage: 24V Breakdown voltage: 25V Semiconductor structure: bidirectional Case: 0603 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape |
товар відсутній |
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BZT52C30 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Zener current: 2mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 983 шт: термін постачання 21-30 дні (днів) |
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BZT52C33 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 33V; 2mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 33V Zener current: 2mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 660 шт: термін постачання 21-30 дні (днів) |
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BZT52C36 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Zener current: 2mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 945 шт: термін постачання 21-30 дні (днів) |
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BZX85C3V9 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 3.9V; 60mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 3.9V Zener current: 60mA Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 20µA |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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P6SMB43CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.6A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.6A Breakdown voltage: 43V |
товар відсутній |
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TS78L05CS RLG | TAIWAN SEMICONDUCTOR |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 100mA; SOP8; SMD; 0÷150°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.1A Case: SOP8 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 5.8...20V Manufacturer series: TS78L00 |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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TSM4424CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; SOP8 Case: SOP8 Mounting: SMD On-state resistance: 30mΩ Gate charge: 11.2nC Polarisation: unipolar Drain current: 8A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V |
товар відсутній |
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BZX84C3V9 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.9V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA |
на замовлення 549 шт: термін постачання 21-30 дні (днів) |
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TSM2309CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.2nC Kind of channel: enhanced |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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P6SMB220CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Peak pulse power dissipation: 0.6kW Max. forward impulse current: 1.9A Breakdown voltage: 220V Max. off-state voltage: 185V |
товар відсутній |
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P6SMB220CA R5G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Peak pulse power dissipation: 0.6kW Max. forward impulse current: 1.9A Breakdown voltage: 220V Max. off-state voltage: 185V |
товар відсутній |
BZX84C5V6 RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 836 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
128+ | 2.94 грн |
143+ | 2.44 грн |
404+ | 2 грн |
TSS40U RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; 0603; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Case: 0603
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; 0603; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Case: 0603
Kind of package: reel; tape
Max. forward impulse current: 0.6A
на замовлення 489 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 17 грн |
60+ | 5.84 грн |
100+ | 5.22 грн |
200+ | 4.03 грн |
TSM60NB150CF C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
товар відсутній
BZT55C27 L1 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; SMD; reel,tape; MiniMELF quadro
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF quadro
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; SMD; reel,tape; MiniMELF quadro
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF quadro
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 7984 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
224+ | 1.68 грн |
265+ | 1.31 грн |
500+ | 1.16 грн |
1860+ | 1.13 грн |
2500+ | 1.08 грн |
BZT55C6V2 L1 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; SMD; reel,tape; MiniMELF quadro
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF quadro
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; SMD; reel,tape; MiniMELF quadro
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF quadro
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 625 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
191+ | 1.97 грн |
212+ | 1.64 грн |
500+ | 1.45 грн |
616+ | 1.3 грн |
LL4004G L0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; MELF plastic; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF plastic
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; MELF plastic; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF plastic
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
товар відсутній
GBU1005 |
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 55 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 99.61 грн |
5+ | 83.45 грн |
13+ | 63.05 грн |
36+ | 59.61 грн |
GBU1007 |
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 101 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 99.61 грн |
5+ | 83.45 грн |
13+ | 63.05 грн |
36+ | 59.61 грн |
BZD27C15P |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 25mA; SMD; reel,tape; subSMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 25mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: subSMA
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 25mA; SMD; reel,tape; subSMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 25mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: subSMA
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 205 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 16.18 грн |
30+ | 12.1 грн |
90+ | 9.25 грн |
BZD27C15PW |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 50mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 50mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 1µA
товар відсутній
RMB4S RCG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.5A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 30A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.5A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 30A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
товар відсутній
MBR1660 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
на замовлення 21 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 79.39 грн |
8+ | 46.18 грн |
MBRF1645 C0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220FP-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Max. load current: 32A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220FP-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Max. load current: 32A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 150A
на замовлення 600 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 67.4 грн |
7+ | 56.33 грн |
17+ | 50.07 грн |
45+ | 47.29 грн |
100+ | 46.59 грн |
500+ | 45.9 грн |
TQM150NB04CR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
товар відсутній
TQM150NB04DCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 9A; 16W; PDFN56U
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 16W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 9A; 16W; PDFN56U
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 16W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
товар відсутній
TSM150NB04CR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
товар відсутній
TSM150NB04DCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8A
Power dissipation: 8W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8A
Power dissipation: 8W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
товар відсутній
TSM150NB04LCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
товар відсутній
TS358CD C3G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.4V/μs
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: tube
Input bias current: 0.5µA
Input offset current: 150nA
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.4V/μs
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: tube
Input bias current: 0.5µA
Input offset current: 150nA
на замовлення 93 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 26.14 грн |
25+ | 15.79 грн |
65+ | 12.1 грн |
BZV55B3V9 L1G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 735 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.02 грн |
110+ | 3.22 грн |
335+ | 2.43 грн |
6A60G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
Capacitance: 60pF
Load current: 6A
Type of diode: rectifying
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Max. forward voltage: 1V
Capacitance: 60pF
Load current: 6A
Type of diode: rectifying
Max. forward impulse current: 250A
на замовлення 124 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 20.97 грн |
21+ | 16.9 грн |
23+ | 15.72 грн |
25+ | 15.02 грн |
62+ | 13.07 грн |
TSZU52C2V2 RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.2V; 5mA; SMD; reel,tape; 0603; single diode
Case: 0603
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.2V
Zener current: 5mA
Leakage current: 0.1mA
Power dissipation: 0.15W
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.2V; 5mA; SMD; reel,tape; 0603; single diode
Case: 0603
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.2V
Zener current: 5mA
Leakage current: 0.1mA
Power dissipation: 0.15W
Type of diode: Zener
товар відсутній
TS331CX5 RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.3us; SMT; SOT25; reel,tape; 50nA
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Delay time: 1.3µs
Mounting: SMT
Case: SOT25
Operating temperature: -40...105°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 50nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.3us; SMT; SOT25; reel,tape; 50nA
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Delay time: 1.3µs
Mounting: SMT
Case: SOT25
Operating temperature: -40...105°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 50nA
Voltage supply range: ± 1...18V DC; 2...36V DC
на замовлення 21 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
21+ | 17.97 грн |
P6SMB36A M4G |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
P6SMB36A R5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
LL5818 L0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; MELF plastic; reel,tape
Case: MELF plastic
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; MELF plastic; reel,tape
Case: MELF plastic
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
на замовлення 338 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 31.45 грн |
25+ | 16.27 грн |
64+ | 12.67 грн |
175+ | 11.98 грн |
LL5818 L0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; MELF plastic
Case: MELF plastic
Mounting: SMD
Max. forward voltage: 0.875V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; MELF plastic
Case: MELF plastic
Mounting: SMD
Max. forward voltage: 0.875V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
на замовлення 611 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 16.48 грн |
25+ | 14.67 грн |
66+ | 12.24 грн |
181+ | 11.61 грн |
BZT52C16 RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 925 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.02 грн |
105+ | 3.4 грн |
250+ | 2.71 грн |
315+ | 2.56 грн |
865+ | 2.42 грн |
TSM60NB380CF C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Power dissipation: 62.5W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Power dissipation: 62.5W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
товар відсутній
TSM60NB380CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Power dissipation: 83W
Gate charge: 19.4nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: IPAK
On-state resistance: 0.38Ω
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Power dissipation: 83W
Gate charge: 19.4nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: IPAK
On-state resistance: 0.38Ω
Mounting: THT
товар відсутній
TSM60NB380CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Power dissipation: 83W
Gate charge: 19.4nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Power dissipation: 83W
Gate charge: 19.4nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
товар відсутній
GBU606 D2G |
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
товар відсутній
1.5KE91CA R0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 91V; 12.6A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 125V
Breakdown voltage: 91V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 91V; 12.6A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 125V
Breakdown voltage: 91V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
на замовлення 180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 41.94 грн |
19+ | 18.5 грн |
50+ | 14.88 грн |
145+ | 14.4 грн |
TSM4425CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 1.6W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 1.6W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhanced
товар відсутній
SS115 R2 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
товар відсутній
SS115L R2 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: subSMA
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: subSMA
Kind of package: reel; tape
Max. forward impulse current: 30A
на замовлення 360 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 11.23 грн |
45+ | 7.93 грн |
100+ | 7.02 грн |
135+ | 6.12 грн |
BZX55C6V2 R0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 310 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
99+ | 3.8 грн |
137+ | 2.54 грн |
BZX55C6V2 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1968 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 11.23 грн |
52+ | 6.82 грн |
75+ | 4.65 грн |
100+ | 3.53 грн |
250+ | 2.61 грн |
500+ | 2.33 грн |
559+ | 1.44 грн |
1537+ | 1.36 грн |
TS1935BCX5 RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Output current: 1.9A
Case: SOT25
Mounting: SMD
Frequency: 1.2MHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Duty cycle factor: 0...87%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Output current: 1.9A
Case: SOT25
Mounting: SMD
Frequency: 1.2MHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Duty cycle factor: 0...87%
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 100.36 грн |
5+ | 84.15 грн |
13+ | 66.07 грн |
34+ | 62.59 грн |
TESD5V0V4UA RDG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; 95W; 2510P10; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 95W
Mounting: SMD
Case: 2510P10
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 5A; 95W; 2510P10; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 95W
Mounting: SMD
Case: 2510P10
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
товар відсутній
BZX55C47 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Zener current: 2.5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Zener current: 2.5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 940 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
155+ | 2.47 грн |
185+ | 1.91 грн |
500+ | 1.69 грн |
505+ | 1.61 грн |
BZY55B15 RYG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: 0805
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: 0805
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 819 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.35 грн |
100+ | 3.73 грн |
250+ | 2.96 грн |
310+ | 2.54 грн |
BZT52C75 RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 329 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.32 грн |
100+ | 3.58 грн |
250+ | 2.84 грн |
315+ | 2.48 грн |
BZT52B7V5S RRG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
на замовлення 830 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.32 грн |
100+ | 3.58 грн |
250+ | 2.84 грн |
315+ | 2.48 грн |
P6SMB200CA |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 471 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 20.97 грн |
25+ | 17.52 грн |
59+ | 13.77 грн |
161+ | 13 грн |
P6SMB200CAHM4G |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
TSM190N08CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
товар відсутній
P6KE82A R0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 4775 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 9.89 грн |
60+ | 6.26 грн |
100+ | 5.56 грн |
175+ | 4.8 грн |
470+ | 4.52 грн |
TESDU24V RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 47W; 25V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 47W
Max. off-state voltage: 24V
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 47W; 25V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 47W
Max. off-state voltage: 24V
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
товар відсутній
BZT52C30 RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 983 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.32 грн |
100+ | 3.58 грн |
250+ | 2.84 грн |
315+ | 2.56 грн |
865+ | 2.42 грн |
BZT52C33 RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 660 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.32 грн |
100+ | 3.58 грн |
250+ | 2.84 грн |
315+ | 2.53 грн |
BZT52C36 RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 945 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.32 грн |
100+ | 3.58 грн |
250+ | 2.84 грн |
315+ | 2.57 грн |
865+ | 2.43 грн |
BZX85C3V9 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; 60mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Zener current: 60mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 20µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; 60mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Zener current: 60mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 20µA
на замовлення 75 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.32 грн |
P6SMB43CA M4G |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.6A
Breakdown voltage: 43V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.6A
Breakdown voltage: 43V
товар відсутній
TS78L05CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; SOP8; SMD; 0÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 5.8...20V
Manufacturer series: TS78L00
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; SOP8; SMD; 0÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 5.8...20V
Manufacturer series: TS78L00
на замовлення 66 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 44.94 грн |
16+ | 22.25 грн |
25+ | 19.4 грн |
52+ | 15.72 грн |
TSM4424CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; SOP8
Case: SOP8
Mounting: SMD
On-state resistance: 30mΩ
Gate charge: 11.2nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; SOP8
Case: SOP8
Mounting: SMD
On-state resistance: 30mΩ
Gate charge: 11.2nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
товар відсутній
BZX84C3V9 RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
на замовлення 549 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.27 грн |
115+ | 3.03 грн |
375+ | 2.12 грн |
TSM2309CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
на замовлення 990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 32.2 грн |
15+ | 23.78 грн |
25+ | 19.19 грн |
64+ | 12.66 грн |
175+ | 11.96 грн |
P6SMB220CA M4G |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.9A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.9A
Breakdown voltage: 220V
Max. off-state voltage: 185V
товар відсутній
P6SMB220CA R5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.9A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.9A
Breakdown voltage: 220V
Max. off-state voltage: 185V
товар відсутній