Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66399) > Сторінка 1106 з 1107
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MBRS2045CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2 Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.95V |
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| MBRS2560CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2 Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.9V |
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| MBRS10H100CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2 Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.95V |
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| MBRS10H100CTH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2 Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.95V Application: automotive industry |
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| MBRS1560CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 60V; 7.5Ax2 Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 60V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.75V |
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| MBRS2045CTH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2 Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Application: automotive industry |
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В кошику од. на суму грн. | |||||||||
| MBRS20H100CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.95V |
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| PU3BFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 3A; 25ns; SOD128; Ufmax: 930mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD128 Max. forward voltage: 0.93V Kind of package: reel; tape Application: automotive industry |
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| SMAJ30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3V; 8.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
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TS317LCS RLG | TAIWAN SEMICONDUCTOR |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8 Case: SOP8 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -20...125°C Output current: 0.1A Number of channels: 1 Tolerance: ±4% Output voltage: 1.25...37V Input voltage: 40V Kind of voltage regulator: adjustable; linear |
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| SMCJ70CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 70V Breakdown voltage: 77.8...86V Max. forward impulse current: 13.9A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape Tolerance: ±5% |
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| SMCJ70A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 70V Breakdown voltage: 77.8...86V Max. forward impulse current: 13.9A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape Tolerance: ±5% |
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| SMA4F24AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 26.8÷29.6V; 10.3A; unidirectional; ±5%; SMA flat Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.8...29.6V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA flat Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMA4F |
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MBR1060 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Case: TO220AC Forward voltage at If: 0.8V |
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| DBLS201G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; Ifsm: 50A; DBLS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 50V Max. forward impulse current: 50A Case: DBLS Electrical mounting: SMT Max. forward voltage: 1.15V Max. load current: 2A |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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| TSD20H100CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20A Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.79V Max. forward impulse current: 100A |
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| MBRS20H100CTH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.95V Application: automotive industry |
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| SMCJ18A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 20÷22.1V; 53A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 53A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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| TSM60NB900CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; IPAK Case: IPAK Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 9.6nC Drain current: 2.4A On-state resistance: 0.9Ω Gate-source voltage: ±30V Drain-source voltage: 600V Power dissipation: 36.8W Kind of channel: enhancement Type of transistor: N-MOSFET |
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| TSM60NB900CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; DPAK Case: DPAK Mounting: SMD Kind of package: tape Polarisation: unipolar Gate charge: 9.6nC Drain current: 2.4A On-state resistance: 0.9Ω Gate-source voltage: ±30V Drain-source voltage: 600V Power dissipation: 36.8W Kind of channel: enhancement Type of transistor: N-MOSFET |
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| P4KE27A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.4kW; 25.7V; 11A; unidirectional; DO41; P4KE Case: DO41 Mounting: THT Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 11A Max. off-state voltage: 23.1V Breakdown voltage: 25.7V Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
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1PGSMB5955 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 180V; 8mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 180V Zener current: 8mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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| TSCDT08065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube |
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В кошику од. на суму грн. | |||||||||
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MBR1560CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 15A; TO220AB; Ufmax: 0.84V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 150A Case: TO220AB Max. forward voltage: 0.84V |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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| SMCJ18CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 53A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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| RS1MFL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 250ns; Ufmax: 1.3V; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 250ns Semiconductor structure: single diode Max. forward voltage: 1.3V Leakage current: 5µA Max. load current: 1A |
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TSM2328CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.5A Power dissipation: 1.38W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 11.1nC Kind of package: tape Kind of channel: enhancement |
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1PGSMB5933 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 22V; 68mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 22V Zener current: 68mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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| US1JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry Capacitance: 10pF |
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| S3MBH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.15V Kind of package: reel; tape Reverse recovery time: 1.5µs Application: automotive industry |
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В кошику од. на суму грн. | |||||||||
| HS3MB | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD Type of diode: rectifying Mounting: SMD |
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В кошику од. на суму грн. | |||||||||
| HS3MBH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 3A; 75ns; SMB; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.7V Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Reverse recovery time: 75ns Application: automotive industry |
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В кошику од. на суму грн. | |||||||||
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TSF40H100C C0G | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.65V Max. forward impulse current: 250A Kind of package: tube |
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В кошику од. на суму грн. | ||||||||
| SMAJ36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
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В кошику од. на суму грн. | |||||||||
| SMAJ36AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
на замовлення 600 шт: термін постачання 21-30 дні (днів) |
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| SS110LH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; automotive industry Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Max. forward voltage: 0.8V Max. load current: 1A Application: automotive industry Leakage current: 50µA |
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| P4SMA6.8CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA Type of diode: TVS Case: SMA Mounting: SMD Max. off-state voltage: 5.8V Semiconductor structure: bidirectional Max. forward impulse current: 40A Breakdown voltage: 6.46V Peak pulse power dissipation: 0.4kW Manufacturer series: P4SMA |
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В кошику од. на суму грн. | |||||||||
| TSD30H100CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A Mounting: SMD Semiconductor structure: common cathode; double Case: D2PAK Type of diode: Schottky rectifying Max. forward voltage: 0.78V Load current: 30A Max. off-state voltage: 100V Max. forward impulse current: 200A |
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В кошику од. на суму грн. | |||||||||
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BZT52C6V8 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 1.8µA Zener current: 5mA |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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P6SMB27A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 16A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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S1D M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 40A Max. off-state voltage: 200V Features of semiconductor devices: glass passivated Capacitance: 12pF Reverse recovery time: 1.5µs |
на замовлення 946 шт: термін постачання 21-30 дні (днів) |
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S1G M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 40A Max. off-state voltage: 0.4kV Features of semiconductor devices: glass passivated Capacitance: 12pF Reverse recovery time: 1.5µs |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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| MBR1545CTH | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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B0520LW RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.385V Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 1040 шт: термін постачання 21-30 дні (днів) |
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TSZU52C12 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 12V; 5mA; SMD; reel,tape; 0603; single diode Type of diode: Zener Leakage current: 0.1µA Zener current: 5mA Power dissipation: 0.15W Tolerance: ±5% Zener voltage: 12V Case: 0603 Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD |
на замовлення 420 шт: термін постачання 21-30 дні (днів) |
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SK86C | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 8A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: reel; tape |
на замовлення 396 шт: термін постачання 21-30 дні (днів) |
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| SMBJ60CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 6.5A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| TS40P06G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 40A Max. forward impulse current: 0.4kA Version: flat Case: TS-6P Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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| SR506 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 5A; DO201AD; Ufmax: 700mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.7V |
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|
1PGSMB5949 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 100V; 15mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 100V Zener current: 15mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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| BZD27C100PW | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 100V; 50mA; SMD; reel,tape; SOD123W; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 100V Zener current: 50mA Kind of package: reel; tape Case: SOD123W Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
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| MBRAD1560DH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 7.5Ax2; reel,tape Case: thinDPAK Mounting: SMD Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Kind of package: reel; tape Max. forward voltage: 0.75V Load current: 7.5A x2 Max. off-state voltage: 60V Application: automotive industry |
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| MBRAD1560H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 15A; reel,tape Case: thinDPAK Mounting: SMD Semiconductor structure: single diode Type of diode: Schottky rectifying Kind of package: reel; tape Max. forward voltage: 0.75V Load current: 15A Max. off-state voltage: 60V Application: automotive industry |
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|
P6SMB6.8CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 60A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 2mA Kind of package: reel; tape Manufacturer series: P6SMB |
на замовлення 322 шт: термін постачання 21-30 дні (днів) |
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| P4KE100A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; DO41; P4KE Type of diode: TVS Max. off-state voltage: 85.5V Breakdown voltage: 95V Max. forward impulse current: 3A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
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| P4KE100CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 95V; 3A; bidirectional; DO41; 0.4kW; P4KE Type of diode: TVS Max. off-state voltage: 85.5V Breakdown voltage: 95V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
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| TSUP8H100H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 100V; 8A; reel,tape Case: TO277A Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.75V Load current: 8A Max. off-state voltage: 100V Application: automotive industry |
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В кошику од. на суму грн. | |||||||||
|
BZT52C4V3 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA Zener current: 5mA |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||
| TSM3N80CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.83A Gate charge: 19nC Power dissipation: 94W On-state resistance: 4.2Ω Gate-source voltage: ±30V Case: IPAK Kind of package: tube Kind of channel: enhancement |
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| TSM3N80CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.83A Gate charge: 19nC Power dissipation: 94W On-state resistance: 4.2Ω Gate-source voltage: ±30V Case: DPAK Kind of package: tape Kind of channel: enhancement |
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| MBRS2045CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
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| MBRS2560CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
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| MBRS10H100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
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| MBRS10H100CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Application: automotive industry
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| MBRS1560CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 7.5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 7.5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.75V
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| MBRS2045CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Application: automotive industry
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| MBRS20H100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
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| PU3BFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SOD128; Ufmax: 930mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD128
Max. forward voltage: 0.93V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 25ns; SOD128; Ufmax: 930mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD128
Max. forward voltage: 0.93V
Kind of package: reel; tape
Application: automotive industry
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| SMAJ30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| TS317LCS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8
Case: SOP8
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -20...125°C
Output current: 0.1A
Number of channels: 1
Tolerance: ±4%
Output voltage: 1.25...37V
Input voltage: 40V
Kind of voltage regulator: adjustable; linear
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8
Case: SOP8
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -20...125°C
Output current: 0.1A
Number of channels: 1
Tolerance: ±4%
Output voltage: 1.25...37V
Input voltage: 40V
Kind of voltage regulator: adjustable; linear
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| SMCJ70CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 13.9A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 13.9A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMCJ70A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 13.9A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 13.9A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMA4F24AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.8÷29.6V; 10.3A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.8...29.6V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4F
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.8÷29.6V; 10.3A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.8...29.6V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4F
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| MBR1060 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Case: TO220AC
Forward voltage at If: 0.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Case: TO220AC
Forward voltage at If: 0.8V
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| DBLS201G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ifsm: 50A; DBLS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Max. forward voltage: 1.15V
Max. load current: 2A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ifsm: 50A; DBLS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Max. forward voltage: 1.15V
Max. load current: 2A
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 24.47 грн |
| TSD20H100CW MNG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
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| MBRS20H100CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
Application: automotive industry
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| SMCJ18A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| TSM60NB900CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; IPAK
Case: IPAK
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 9.6nC
Drain current: 2.4A
On-state resistance: 0.9Ω
Gate-source voltage: ±30V
Drain-source voltage: 600V
Power dissipation: 36.8W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; IPAK
Case: IPAK
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 9.6nC
Drain current: 2.4A
On-state resistance: 0.9Ω
Gate-source voltage: ±30V
Drain-source voltage: 600V
Power dissipation: 36.8W
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| TSM60NB900CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 9.6nC
Drain current: 2.4A
On-state resistance: 0.9Ω
Gate-source voltage: ±30V
Drain-source voltage: 600V
Power dissipation: 36.8W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 9.6nC
Drain current: 2.4A
On-state resistance: 0.9Ω
Gate-source voltage: ±30V
Drain-source voltage: 600V
Power dissipation: 36.8W
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| P4KE27A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 25.7V; 11A; unidirectional; DO41; P4KE
Case: DO41
Mounting: THT
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 11A
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 25.7V; 11A; unidirectional; DO41; P4KE
Case: DO41
Mounting: THT
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 11A
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| 1PGSMB5955 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; 8mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Zener current: 8mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; 8mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Zener current: 8mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.76 грн |
| 23+ | 17.86 грн |
| 25+ | 17.70 грн |
| TSCDT08065G1 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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| MBR1560CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; TO220AB; Ufmax: 0.84V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AB
Max. forward voltage: 0.84V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; TO220AB; Ufmax: 0.84V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AB
Max. forward voltage: 0.84V
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.98 грн |
| 10+ | 45.69 грн |
| 50+ | 39.95 грн |
| SMCJ18CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| RS1MFL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 250ns; Ufmax: 1.3V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Leakage current: 5µA
Max. load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 250ns; Ufmax: 1.3V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Leakage current: 5µA
Max. load current: 1A
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| TSM2328CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.5A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 11.1nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.5A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 11.1nC
Kind of package: tape
Kind of channel: enhancement
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| 1PGSMB5933 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; 68mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Zener current: 68mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; 68mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Zener current: 68mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 68 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.76 грн |
| 20+ | 20.41 грн |
| US1JH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
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| S3MBH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Application: automotive industry
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| HS3MB |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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| HS3MBH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 75ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 75ns
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 75ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 75ns
Application: automotive industry
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| TSF40H100C C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.65V
Max. forward impulse current: 250A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.65V
Max. forward impulse current: 250A
Kind of package: tube
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| SMAJ36A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ36AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.76 грн |
| 28+ | 14.67 грн |
| 100+ | 9.17 грн |
| 500+ | 6.86 грн |
| SS110LH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Max. forward voltage: 0.8V
Max. load current: 1A
Application: automotive industry
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Max. forward voltage: 0.8V
Max. load current: 1A
Application: automotive industry
Leakage current: 50µA
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| P4SMA6.8CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 5.8V
Semiconductor structure: bidirectional
Max. forward impulse current: 40A
Breakdown voltage: 6.46V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 5.8V
Semiconductor structure: bidirectional
Max. forward impulse current: 40A
Breakdown voltage: 6.46V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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| TSD30H100CW MNG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A
Mounting: SMD
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward voltage: 0.78V
Load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A
Mounting: SMD
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward voltage: 0.78V
Load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 200A
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| BZT52C6V8 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 1.8µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 1.8µA
Zener current: 5mA
на замовлення 960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.12 грн |
| 145+ | 2.79 грн |
| 250+ | 2.53 грн |
| P6SMB27A M4G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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| S1D M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
на замовлення 946 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.89 грн |
| 39+ | 10.29 грн |
| 136+ | 2.93 грн |
| 500+ | 2.20 грн |
| S1G M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.45 грн |
| 50+ | 7.97 грн |
| MBR1545CTH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
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| B0520LW RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 1040 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.46 грн |
| 50+ | 8.13 грн |
| 55+ | 7.34 грн |
| TSZU52C12 RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 12V; 5mA; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Leakage current: 0.1µA
Zener current: 5mA
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 12V
Case: 0603
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 12V; 5mA; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Leakage current: 0.1µA
Zener current: 5mA
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 12V
Case: 0603
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
на замовлення 420 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 10.30 грн |
| 75+ | 5.49 грн |
| 100+ | 4.35 грн |
| SK86C |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
на замовлення 396 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.96 грн |
| 13+ | 30.94 грн |
| 100+ | 21.13 грн |
| 200+ | 20.65 грн |
| SMBJ60CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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| TS40P06G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| SR506 | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5A; DO201AD; Ufmax: 700mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.7V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5A; DO201AD; Ufmax: 700mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.7V
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| 1PGSMB5949 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; 15mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Zener current: 15mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; 15mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Zener current: 15mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.76 грн |
| 20+ | 20.41 грн |
| BZD27C100PW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 100V
Zener current: 50mA
Kind of package: reel; tape
Case: SOD123W
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 100V
Zener current: 50mA
Kind of package: reel; tape
Case: SOD123W
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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| MBRAD1560DH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 7.5Ax2; reel,tape
Case: thinDPAK
Mounting: SMD
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Kind of package: reel; tape
Max. forward voltage: 0.75V
Load current: 7.5A x2
Max. off-state voltage: 60V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 7.5Ax2; reel,tape
Case: thinDPAK
Mounting: SMD
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Kind of package: reel; tape
Max. forward voltage: 0.75V
Load current: 7.5A x2
Max. off-state voltage: 60V
Application: automotive industry
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| MBRAD1560H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 15A; reel,tape
Case: thinDPAK
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Kind of package: reel; tape
Max. forward voltage: 0.75V
Load current: 15A
Max. off-state voltage: 60V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 15A; reel,tape
Case: thinDPAK
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Kind of package: reel; tape
Max. forward voltage: 0.75V
Load current: 15A
Max. off-state voltage: 60V
Application: automotive industry
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| P6SMB6.8CA | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 322 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.30 грн |
| 48+ | 8.45 грн |
| 100+ | 7.50 грн |
| P4KE100A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| P4KE100CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 95V; 3A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 95V; 3A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 95V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| TSUP8H100H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 8A; reel,tape
Case: TO277A
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 8A
Max. off-state voltage: 100V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 8A; reel,tape
Case: TO277A
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 8A
Max. off-state voltage: 100V
Application: automotive industry
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| BZT52C4V3 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
на замовлення 39 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| TSM3N80CH C5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
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| TSM3N80CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: DPAK
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: DPAK
Kind of package: tape
Kind of channel: enhancement
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