Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66399) > Сторінка 1103 з 1107
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| P4SMA15CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA Mounting: SMD Type of diode: TVS Max. forward impulse current: 20A Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Peak pulse power dissipation: 0.4kW Case: SMA Manufacturer series: P4SMA Semiconductor structure: bidirectional |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P4SMA15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA Mounting: SMD Type of diode: TVS Max. forward impulse current: 20A Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Peak pulse power dissipation: 0.4kW Case: SMA Manufacturer series: P4SMA Semiconductor structure: unidirectional |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P4SMA15AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA Case: SMA Mounting: SMD Application: automotive industry Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 20A Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Peak pulse power dissipation: 0.4kW Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZV55C24 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 24V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 4583 шт: термін постачання 21-30 дні (днів) |
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| SS215 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Case: SMB Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 150V Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMAJ20A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.2V; 12.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1.5KE20A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 20V; 56A; unidirectional; ±5%; DO201; 1.5KE Type of diode: TVS Max. off-state voltage: 27.7V Breakdown voltage: 20V Max. forward impulse current: 56A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
на замовлення 1240 шт: термін постачання 21-30 дні (днів) |
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| MBR20H100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 950mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.95V Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||
| MBRF20H100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.95V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TSM042N03CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate charge: 24nC Power dissipation: 7W |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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| TSM130NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56 Mounting: SMD Type of transistor: N-MOSFET Case: PDFN56 Kind of package: tape Polarisation: unipolar Gate charge: 36nC On-state resistance: 13mΩ Drain current: 10A Gate-source voltage: ±20V Power dissipation: 28W Drain-source voltage: 60V Kind of channel: enhancement |
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| TSM130NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56 Mounting: SMD Type of transistor: N-MOSFET Case: PDFN56 Kind of package: tape Polarisation: unipolar Gate charge: 37nC On-state resistance: 13mΩ Drain current: 10A Gate-source voltage: ±20V Power dissipation: 28W Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TSUP10M45SH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MTZJ22SC R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 21.63V; 5mA; tape; DO34; single diode; Ir: 200nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 21.63V Zener current: 5mA Kind of package: tape Case: DO34 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.2µA |
на замовлення 9440 шт: термін постачання 21-30 дні (днів) |
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| SMBJ20A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 19.4A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZT52C24 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 24V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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| SS14 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.4V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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TS431BCX RFG | TAIWAN SEMICONDUCTOR |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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GBU406 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 80A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 80A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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| TQM138KDCU6 RFG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT363 Kind of package: tape Polarisation: unipolar Gate charge: 1.8nC Drain current: 0.32A Power dissipation: 0.32W On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMAJ10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1V; 23.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBS6 RCG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 35A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBS6 | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 35A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
на замовлення 670 шт: термін постачання 21-30 дні (днів) |
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| TS19501CB10H RBG | TAIWAN SEMICONDUCTOR |
Category: LED driversDescription: IC: driver; boost,buck-boost,SEPIC; LED driver; MSOP10; Ch: 1 Type of integrated circuit: driver Topology: boost; buck-boost; SEPIC Kind of integrated circuit: LED driver Case: MSOP10 Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...125°C Application: automotive industry Operating voltage: 8...38V DC Frequency: 70...700kHz Protection: anti-overvoltage OVP; over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX55B24 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 1077 шт: термін постачання 21-30 дні (днів) |
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| MURF1620CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Reverse recovery time: 25ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: ITO220AB Max. load current: 16A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MURF1640CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: ITO220AB Max. load current: 16A Reverse recovery time: 50ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LL5818 L0 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF plastic Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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LL5818 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF plastic Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.875V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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| SF68G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 6A; Ifsm: 150A; DO201AD; 35ns Mounting: THT Case: DO201AD Semiconductor structure: single diode Load current: 6A Type of diode: rectifying Features of semiconductor devices: superfast switching Max. forward impulse current: 150A Max. off-state voltage: 0.6kV Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5SMC33CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.4V; 34A; bidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 34A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5SMC33CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.4V; 34A; bidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 34A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LL5817 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF plastic Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 690 шт: термін постачання 21-30 дні (днів) |
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SFF2005GAH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
на замовлення 997 шт: термін постачання 21-30 дні (днів) |
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| SFF2005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| UGF2005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 20ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: ITO220AB Max. load current: 20A Reverse recovery time: 20ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1SMA4746H | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 18V; SMD; reel,tape; DO214AC,SMA; single diode Kind of package: reel; tape Case: DO214AC; SMA Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Zener voltage: 18V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZT52C4V7S R9G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 2.7µA Zener current: 5mA |
на замовлення 3446 шт: термін постачання 21-30 дні (днів) |
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BZT52C4V7 RH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA Zener current: 5mA |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
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BZT52C4V7 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA Zener current: 5mA |
на замовлення 882 шт: термін постачання 21-30 дні (днів) |
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GBU1005 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A Case: GBU Max. forward impulse current: 220A Kind of package: tube Version: flat Leads: flat pin Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward voltage: 1.1V Load current: 10A Max. off-state voltage: 0.6kV |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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GBU1007 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A Case: GBU Max. forward impulse current: 220A Kind of package: tube Version: flat Leads: flat pin Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward voltage: 1.1V Load current: 10A Max. off-state voltage: 1kV |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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BZX85C3V9 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 3.9V; 60mA; tape; DO41; single diode; Ir: 20uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 3.9V Mounting: THT Tolerance: ±5% Kind of package: tape Case: DO41 Semiconductor structure: single diode Leakage current: 20µA Zener current: 60mA |
на замовлення 475 шт: термін постачання 21-30 дні (днів) |
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BZS55C3V9 RXG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Leakage current: 2µA Zener current: 5mA |
на замовлення 1230 шт: термін постачання 21-30 дні (днів) |
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| S5DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 5A; 1.5us; SMC; Ufmax: 1.15V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 5A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.15V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HS5DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 5A; 50ns; SMC; Ufmax: 1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 5A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SMC Max. forward voltage: 1V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBRAD5200H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 5A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 200V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.88V Kind of package: reel; tape Application: automotive industry |
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| P4KE33CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 31.4V; 9A; bidirectional; DO41; 0.4kW; P4KE Semiconductor structure: bidirectional Max. off-state voltage: 28.2V Case: DO41 Max. forward impulse current: 9A Mounting: THT Type of diode: TVS Breakdown voltage: 31.4V Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
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| SMCJ75CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 13A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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| SMCJ75A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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| SMCJ75AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape Application: automotive industry |
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| SMCJ28A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 34A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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| SMBJ24CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
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|
TSM2302CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: tape Kind of channel: enhancement |
на замовлення 3731 шт: термін постачання 21-30 дні (днів) |
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BZX55C27 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 27V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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| SF24G-T | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; DO15; 35ns Semiconductor structure: single diode Case: DO15 Mounting: THT Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 35ns Load current: 2A Max. off-state voltage: 200V |
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| SF24G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; DO15; 35ns Semiconductor structure: single diode Case: DO15 Mounting: THT Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 35ns Load current: 2A Max. off-state voltage: 200V Max. forward impulse current: 50A |
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| SMDJ30CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 33.3V; 62A; bidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 62A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: SMDJ Kind of package: reel; tape |
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| SMDJ30CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 33.3V; 62A; bidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 62A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: SMDJ Kind of package: reel; tape Application: automotive industry |
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| P6SMB33CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
|
| P4SMA15CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA
Mounting: SMD
Type of diode: TVS
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
Case: SMA
Manufacturer series: P4SMA
Semiconductor structure: bidirectional
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA
Mounting: SMD
Type of diode: TVS
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
Case: SMA
Manufacturer series: P4SMA
Semiconductor structure: bidirectional
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| P4SMA15A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Mounting: SMD
Type of diode: TVS
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
Case: SMA
Manufacturer series: P4SMA
Semiconductor structure: unidirectional
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Mounting: SMD
Type of diode: TVS
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
Case: SMA
Manufacturer series: P4SMA
Semiconductor structure: unidirectional
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| P4SMA15AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Case: SMA
Mounting: SMD
Application: automotive industry
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Case: SMA
Mounting: SMD
Application: automotive industry
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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| BZV55C24 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 4583 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 4.89 грн |
| 110+ | 3.78 грн |
| 250+ | 3.34 грн |
| 1000+ | 3.24 грн |
| SS215 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 150V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 150V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| SMAJ20A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2V; 12.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2V; 12.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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| 1.5KE20A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20V; 56A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Max. off-state voltage: 27.7V
Breakdown voltage: 20V
Max. forward impulse current: 56A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20V; 56A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Max. off-state voltage: 27.7V
Breakdown voltage: 20V
Max. forward impulse current: 56A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
на замовлення 1240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.46 грн |
| 32+ | 12.76 грн |
| 100+ | 11.96 грн |
| 250+ | 11.16 грн |
| 500+ | 10.37 грн |
| MBR20H100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
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| MBRF20H100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Kind of package: tube
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| TSM042N03CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 24nC
Power dissipation: 7W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 24nC
Power dissipation: 7W
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.96 грн |
| 10+ | 45.53 грн |
| 25+ | 40.67 грн |
| TSM130NB06CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Type of transistor: N-MOSFET
Case: PDFN56
Kind of package: tape
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 13mΩ
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Type of transistor: N-MOSFET
Case: PDFN56
Kind of package: tape
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 13mΩ
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 60V
Kind of channel: enhancement
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| TSM130NB06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Type of transistor: N-MOSFET
Case: PDFN56
Kind of package: tape
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 13mΩ
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Type of transistor: N-MOSFET
Case: PDFN56
Kind of package: tape
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 13mΩ
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 60V
Kind of channel: enhancement
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| TSUP10M45SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Application: automotive industry
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| MTZJ22SC R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 21.63V; 5mA; tape; DO34; single diode; Ir: 200nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 21.63V
Zener current: 5mA
Kind of package: tape
Case: DO34
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 21.63V; 5mA; tape; DO34; single diode; Ir: 200nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 21.63V
Zener current: 5mA
Kind of package: tape
Case: DO34
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.2µA
на замовлення 9440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 4.89 грн |
| 105+ | 3.86 грн |
| 250+ | 3.07 грн |
| 1000+ | 2.95 грн |
| SMBJ20A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| BZT52C24 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.02 грн |
| 63+ | 6.38 грн |
| 144+ | 2.77 грн |
| 500+ | 2.15 грн |
| SS14 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.74 грн |
| 43+ | 9.33 грн |
| 100+ | 6.40 грн |
| 250+ | 5.48 грн |
| 500+ | 4.86 грн |
| 1000+ | 4.31 грн |
| TS431BCX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 75 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.20 грн |
| 23+ | 17.86 грн |
| 50+ | 12.36 грн |
| GBU406 | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.39 грн |
| 12+ | 33.57 грн |
| 20+ | 29.98 грн |
| 100+ | 26.55 грн |
| TQM138KDCU6 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Kind of package: tape
Polarisation: unipolar
Gate charge: 1.8nC
Drain current: 0.32A
Power dissipation: 0.32W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Kind of package: tape
Polarisation: unipolar
Gate charge: 1.8nC
Drain current: 0.32A
Power dissipation: 0.32W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
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| SMAJ10A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| MBS6 RCG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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| MBS6 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
на замовлення 670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.77 грн |
| 20+ | 20.01 грн |
| 50+ | 14.67 грн |
| 100+ | 12.92 грн |
| 500+ | 9.81 грн |
| TS19501CB10H RBG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; boost,buck-boost,SEPIC; LED driver; MSOP10; Ch: 1
Type of integrated circuit: driver
Topology: boost; buck-boost; SEPIC
Kind of integrated circuit: LED driver
Case: MSOP10
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry
Operating voltage: 8...38V DC
Frequency: 70...700kHz
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; undervoltage UVP
Category: LED drivers
Description: IC: driver; boost,buck-boost,SEPIC; LED driver; MSOP10; Ch: 1
Type of integrated circuit: driver
Topology: boost; buck-boost; SEPIC
Kind of integrated circuit: LED driver
Case: MSOP10
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry
Operating voltage: 8...38V DC
Frequency: 70...700kHz
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; undervoltage UVP
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| BZX55B24 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1077 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 3.43 грн |
| 139+ | 2.87 грн |
| 155+ | 2.58 грн |
| 250+ | 2.38 грн |
| 500+ | 2.28 грн |
| 1000+ | 2.08 грн |
| MURF1620CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 16A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 16A
Application: automotive industry
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| MURF1640CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 50ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 50ns
Application: automotive industry
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| LL5818 L0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.08 грн |
| 25+ | 21.77 грн |
| 100+ | 18.58 грн |
| LL5818 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.875V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.875V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 19+ | 21.77 грн |
| 100+ | 19.22 грн |
| SF68G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; Ifsm: 150A; DO201AD; 35ns
Mounting: THT
Case: DO201AD
Semiconductor structure: single diode
Load current: 6A
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; Ifsm: 150A; DO201AD; 35ns
Mounting: THT
Case: DO201AD
Semiconductor structure: single diode
Load current: 6A
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Reverse recovery time: 35ns
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| 1.5SMC33CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.4V; 34A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.4V; 34A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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| 1.5SMC33CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.4V; 34A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.4V; 34A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
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| LL5817 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 690 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 100+ | 17.54 грн |
| 500+ | 15.63 грн |
| SFF2005GAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
на замовлення 997 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 59.01 грн |
| 10+ | 51.83 грн |
| 25+ | 47.05 грн |
| SFF2005GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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| UGF2005GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 20ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 20ns
Application: automotive industry
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| 1SMA4746H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 18V; SMD; reel,tape; DO214AC,SMA; single diode
Kind of package: reel; tape
Case: DO214AC; SMA
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 18V
Category: SMD Zener diodes
Description: Diode: Zener; 18V; SMD; reel,tape; DO214AC,SMA; single diode
Kind of package: reel; tape
Case: DO214AC; SMA
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 18V
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| BZT52C4V7S R9G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
на замовлення 3446 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.02 грн |
| 57+ | 7.02 грн |
| 100+ | 4.43 грн |
| 250+ | 3.72 грн |
| 500+ | 3.46 грн |
| BZT52C4V7 RH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
на замовлення 350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.30 грн |
| 61+ | 6.62 грн |
| 86+ | 4.66 грн |
| 121+ | 3.32 грн |
| 250+ | 2.42 грн |
| BZT52C4V7 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
на замовлення 882 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.30 грн |
| 72+ | 5.58 грн |
| 112+ | 3.56 грн |
| 500+ | 2.70 грн |
| GBU1005 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Case: GBU
Max. forward impulse current: 220A
Kind of package: tube
Version: flat
Leads: flat pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 10A
Max. off-state voltage: 0.6kV
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Case: GBU
Max. forward impulse current: 220A
Kind of package: tube
Version: flat
Leads: flat pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 10A
Max. off-state voltage: 0.6kV
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.87 грн |
| 10+ | 68.58 грн |
| 20+ | 63.79 грн |
| GBU1007 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Case: GBU
Max. forward impulse current: 220A
Kind of package: tube
Version: flat
Leads: flat pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 10A
Max. off-state voltage: 1kV
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Case: GBU
Max. forward impulse current: 220A
Kind of package: tube
Version: flat
Leads: flat pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 10A
Max. off-state voltage: 1kV
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.64 грн |
| 5+ | 86.12 грн |
| 10+ | 74.95 грн |
| 20+ | 66.18 грн |
| BZX85C3V9 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; 60mA; tape; DO41; single diode; Ir: 20uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 20µA
Zener current: 60mA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; 60mA; tape; DO41; single diode; Ir: 20uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 20µA
Zener current: 60mA
на замовлення 475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 65+ | 6.87 грн |
| 100+ | 5.34 грн |
| 250+ | 4.70 грн |
| BZS55C3V9 RXG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
на замовлення 1230 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 85+ | 5.15 грн |
| 145+ | 2.81 грн |
| 500+ | 2.23 грн |
| S5DH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 1.5us; SMC; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 1.5us; SMC; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
Application: automotive industry
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| HS5DH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 50ns; SMC; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 50ns; SMC; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
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| MBRAD5200H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.88V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.88V
Kind of package: reel; tape
Application: automotive industry
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| P4KE33CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 31.4V; 9A; bidirectional; DO41; 0.4kW; P4KE
Semiconductor structure: bidirectional
Max. off-state voltage: 28.2V
Case: DO41
Max. forward impulse current: 9A
Mounting: THT
Type of diode: TVS
Breakdown voltage: 31.4V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 31.4V; 9A; bidirectional; DO41; 0.4kW; P4KE
Semiconductor structure: bidirectional
Max. off-state voltage: 28.2V
Case: DO41
Max. forward impulse current: 9A
Mounting: THT
Type of diode: TVS
Breakdown voltage: 31.4V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| SMCJ75CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ75A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ75AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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| SMCJ28A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMBJ24CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| TSM2302CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 3731 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.65 грн |
| 18+ | 23.20 грн |
| 50+ | 17.62 грн |
| 100+ | 15.79 грн |
| 500+ | 12.44 грн |
| 1000+ | 11.32 грн |
| 3000+ | 9.97 грн |
| BZX55C27 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.39 грн |
| 155+ | 2.59 грн |
| 500+ | 2.28 грн |
| SF24G-T |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; DO15; 35ns
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 2A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; DO15; 35ns
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 2A
Max. off-state voltage: 200V
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| SF24G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; DO15; 35ns
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 2A
Max. off-state voltage: 200V
Max. forward impulse current: 50A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; DO15; 35ns
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 2A
Max. off-state voltage: 200V
Max. forward impulse current: 50A
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| SMDJ30CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3V; 62A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3V; 62A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
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| SMDJ30CAH |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3V; 62A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3V; 62A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
Application: automotive industry
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| P6SMB33CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.05 грн |






















