Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66291) > Сторінка 1105 з 1105

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P6SMB15CA M4G P6SMB15CA M4G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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TSS43U RGG TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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TSA1765CW RPG TAIWAN SEMICONDUCTOR Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 560V; 0.15A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 560V
Collector current: 0.15A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 0.5A
Mounting: SMD
Kind of package: reel; tape
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MBRI20100CT TAIWAN SEMICONDUCTOR pdf.php?pn=MBRI20100CT Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
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UG54GSH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 16000 шт:
термін постачання 21-30 дні (днів)
3500+12.35 грн
Мінімальне замовлення: 3500
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1.5SMC15A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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BZY55B10 RBG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; 0805; single diode
Tolerance: ±2%
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: 0805
Semiconductor structure: single diode
Zener voltage: 10V
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 994 шт:
термін постачання 21-30 дні (днів)
42+9.88 грн
61+6.35 грн
100+4.43 грн
250+3.90 грн
306+2.94 грн
841+2.78 грн
Мінімальне замовлення: 42
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SMBJ15A SMBJ15A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 25.1A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 25.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 323 шт:
термін постачання 21-30 дні (днів)
14+30.46 грн
18+21.48 грн
99+9.17 грн
271+8.64 грн
Мінімальне замовлення: 14
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SMCJ5.0CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SS14 TAIWAN SEMICONDUCTOR pdf.php?pn=SS14 5399_SS14%20SMA.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. forward impulse current: 40A
Kind of package: reel; tape
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SMF26AH TAIWAN SEMICONDUCTOR SMF5.0AH SERIES_A2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 28.9V; 4.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 4.8A
Breakdown voltage: 28.9V
Max. off-state voltage: 26V
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SMCJ26A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ26AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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TSM8N80CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
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SMBJ16CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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TSF40H200C C0G TSF40H200C C0G TAIWAN SEMICONDUCTOR TSF40H100C%20SERIES_B14.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; Ufmax: 0.8V
Max. off-state voltage: 200V
Max. forward voltage: 0.8V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
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TSM048NB06LCR RLG TSM048NB06LCR RLG TAIWAN SEMICONDUCTOR TSM048NB06LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tape
Gate charge: 105nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
3+167.95 грн
5+139.90 грн
9+111.62 грн
23+105.50 грн
Мінімальне замовлення: 3
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TQM043NH04LCR RLG TAIWAN SEMICONDUCTOR TQM043NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tape
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TSM025NB04LCR RLG TAIWAN SEMICONDUCTOR TSM025NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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TQM019NH04LCR RLG TAIWAN SEMICONDUCTOR TQM019NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tape
Gate charge: 104nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM025NH04LCR RLG TAIWAN SEMICONDUCTOR TQM025NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tape
Gate charge: 63.3nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM032NH04LCR RLG TAIWAN SEMICONDUCTOR TQM032NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: tape
Gate charge: 50nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM056NH04LCR RLG TAIWAN SEMICONDUCTOR TQM056NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 78.9W
Polarisation: unipolar
Kind of package: tape
Gate charge: 30.4nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM070NH04LCR RLG TAIWAN SEMICONDUCTOR TQM070NH04LCR_D2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 46.8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR TSM033NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
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TSM070NB04LCR RLG TAIWAN SEMICONDUCTOR TSM070NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Drain-source voltage: 40V
Drain current: 15A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 39nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
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TSM110NB04LCR RLG TAIWAN SEMICONDUCTOR TSM110NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of package: tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
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TSM150NB04LCR RLG TAIWAN SEMICONDUCTOR TSM150NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
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BZX85C6V2 R0G BZX85C6V2 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 35mA
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
27+15.64 грн
35+11.09 грн
100+7.14 грн
194+4.66 грн
Мінімальне замовлення: 27
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BZX55C22 R0G BZX55C22 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
115+3.62 грн
140+2.78 грн
Мінімальне замовлення: 115
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BZX55C20 R0G BZX55C20 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1120 шт:
термін постачання 21-30 дні (днів)
36+11.53 грн
51+7.57 грн
100+4.57 грн
401+2.26 грн
1102+2.13 грн
Мінімальне замовлення: 36
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BZX55C2V7 R0G BZX55C2V7 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 585 шт:
термін постачання 21-30 дні (днів)
36+11.53 грн
50+7.72 грн
100+4.60 грн
250+3.69 грн
443+2.04 грн
Мінімальне замовлення: 36
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BZX55C2V7 R0 BZX55C2V7 R0 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 530 шт:
термін постачання 21-30 дні (днів)
99+4.17 грн
137+2.81 грн
423+2.13 грн
Мінімальне замовлення: 99
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BZX55C27 R0G BZX55C27 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 990 шт:
термін постачання 21-30 дні (днів)
115+3.62 грн
140+2.78 грн
410+2.21 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
SMAJ64A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
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1N4007G TAIWAN SEMICONDUCTOR 1n4001-d.pdf 1N4001G-1N4007G%20N0544%20REV.A.pdf 1N4001G SERIES_P2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Capacitance: 10pF
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ES1CL TAIWAN SEMICONDUCTOR ES1AL SERIES_L2103.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
10000+8.48 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
MBR760 MBR760 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1EE586999771DCBE0469&compId=MBR760.pdf?ci_sign=2dd4c122c7137a3dbf18e007efdc1abb4e2da2f9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+205.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MBR760 TAIWAN SEMICONDUCTOR MBR760(MBRB760)%20N0721%20REV.A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
7+66.69 грн
10+51.53 грн
35+26.30 грн
95+24.85 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SMBJ13A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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BZT52C18 RHG BZT52C18 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 680 шт:
термін постачання 21-30 дні (днів)
105+3.95 грн
145+2.68 грн
250+2.40 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
TSM033NB04CR RLG TAIWAN SEMICONDUCTOR TSM033NB04CR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: tape
Kind of channel: enhancement
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TSM035NB04CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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TSM035NB04LCZ C0G TAIWAN SEMICONDUCTOR TSM035NB04LCZ_A2010.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
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TSM025NB04CR RLG TAIWAN SEMICONDUCTOR TSMxxxNB0x_Newsletter.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
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TSM60NE069CIT C0G TAIWAN SEMICONDUCTOR TSM60NE069CIT_A2403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NE069PW C0G TAIWAN SEMICONDUCTOR TSM60NE069PW_A2403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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SMBJ13CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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S3MBH TAIWAN SEMICONDUCTOR S3ABH SERIES_B2207.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
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HS3MBH TAIWAN SEMICONDUCTOR HS3ABH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Application: automotive industry
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SMCJ43CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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P6SMB15CA M4G pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5
P6SMB15CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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TSS43U RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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TSA1765CW RPG
Виробник: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 560V; 0.15A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 560V
Collector current: 0.15A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 0.5A
Mounting: SMD
Kind of package: reel; tape
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MBRI20100CT pdf.php?pn=MBRI20100CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
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UG54GSH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 16000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3500+12.35 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
1.5SMC15A littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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BZY55B10 RBG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; 0805; single diode
Tolerance: ±2%
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: 0805
Semiconductor structure: single diode
Zener voltage: 10V
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 994 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+9.88 грн
61+6.35 грн
100+4.43 грн
250+3.90 грн
306+2.94 грн
841+2.78 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SMBJ15A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
SMBJ15A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 25.1A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 25.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 323 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.46 грн
18+21.48 грн
99+9.17 грн
271+8.64 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMCJ5.0CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SS14 pdf.php?pn=SS14 5399_SS14%20SMA.PDF
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. forward impulse current: 40A
Kind of package: reel; tape
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SMF26AH SMF5.0AH SERIES_A2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 28.9V; 4.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 4.8A
Breakdown voltage: 28.9V
Max. off-state voltage: 26V
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SMCJ26A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ26AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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TSM8N80CZ C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
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SMBJ16CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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TSF40H200C C0G TSF40H100C%20SERIES_B14.pdf
TSF40H200C C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; Ufmax: 0.8V
Max. off-state voltage: 200V
Max. forward voltage: 0.8V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
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TSM048NB06LCR RLG TSM048NB06LCR_B1804.pdf
TSM048NB06LCR RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tape
Gate charge: 105nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+167.95 грн
5+139.90 грн
9+111.62 грн
23+105.50 грн
Мінімальне замовлення: 3
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TQM043NH04LCR RLG TQM043NH04LCR_C2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tape
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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TQM019NH04LCR RLG TQM019NH04LCR_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tape
Gate charge: 104nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM025NH04LCR RLG TQM025NH04LCR_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tape
Gate charge: 63.3nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM032NH04LCR RLG TQM032NH04LCR_C2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: tape
Gate charge: 50nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM056NH04LCR RLG TQM056NH04LCR_C2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 78.9W
Polarisation: unipolar
Kind of package: tape
Gate charge: 30.4nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TQM070NH04LCR RLG TQM070NH04LCR_D2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 46.8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
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TSM070NB04LCR RLG TSM070NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Drain-source voltage: 40V
Drain current: 15A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 39nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
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TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of package: tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
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TSM150NB04LCR RLG TSM150NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56
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BZX85C6V2 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C6V2 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 35mA
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+15.64 грн
35+11.09 грн
100+7.14 грн
194+4.66 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BZX55C22 R0G
BZX55C22 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
115+3.62 грн
140+2.78 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
BZX55C20 R0G
BZX55C20 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.53 грн
51+7.57 грн
100+4.57 грн
401+2.26 грн
1102+2.13 грн
Мінімальне замовлення: 36
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BZX55C2V7 R0G
BZX55C2V7 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 585 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.53 грн
50+7.72 грн
100+4.60 грн
250+3.69 грн
443+2.04 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZX55C2V7 R0 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3
BZX55C2V7 R0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 530 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
99+4.17 грн
137+2.81 грн
423+2.13 грн
Мінімальне замовлення: 99
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BZX55C27 R0G
BZX55C27 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
115+3.62 грн
140+2.78 грн
410+2.21 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
SMAJ64A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
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1N4007G 1n4001-d.pdf 1N4001G-1N4007G%20N0544%20REV.A.pdf 1N4001G SERIES_P2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Capacitance: 10pF
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ES1CL ES1AL SERIES_L2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+8.48 грн
Мінімальне замовлення: 10000
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MBR760 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586999771DCBE0469&compId=MBR760.pdf?ci_sign=2dd4c122c7137a3dbf18e007efdc1abb4e2da2f9
MBR760
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+205.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MBR760 MBR760(MBRB760)%20N0721%20REV.A.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+66.69 грн
10+51.53 грн
35+26.30 грн
95+24.85 грн
Мінімальне замовлення: 7
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SMBJ13A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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BZT52C18 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C18 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 680 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+3.95 грн
145+2.68 грн
250+2.40 грн
Мінімальне замовлення: 105
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TSM033NB04CR RLG TSM033NB04CR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: tape
Kind of channel: enhancement
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TSM035NB04CZ C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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TSM035NB04LCZ C0G TSM035NB04LCZ_A2010.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
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TSM025NB04CR RLG TSMxxxNB0x_Newsletter.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
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TSM60NE069CIT C0G TSM60NE069CIT_A2403.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NE069PW C0G TSM60NE069PW_A2403.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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SMBJ13CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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S3MBH S3ABH SERIES_B2207.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
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HS3MBH HS3ABH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Application: automotive industry
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SMCJ43CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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