Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66305) > Сторінка 1105 з 1106
| Фото | Назва | Виробник | Інформація |
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MBR1045 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 20A Case: TO220AC Forward voltage at If: 840mV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF30200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 1.05V Max. forward impulse current: 200A Kind of package: tube |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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MBR1660 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR1660 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TESDU12V RGG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 25W; 13V; bidirectional; reel,tape; Case: 0201 Type of diode: TVS Mounting: SMD Max. off-state voltage: 12V Semiconductor structure: bidirectional Kind of package: reel; tape Leakage current: 2µA Breakdown voltage: 13V Peak pulse power dissipation: 25W Case - inch: 0201 Case - mm: 0603 |
на замовлення 122 шт: термін постачання 21-30 дні (днів) |
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TESDU24V RGG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 47W; 25V; bidirectional; reel,tape; Case: 0201 Type of diode: TVS Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: bidirectional Kind of package: reel; tape Leakage current: 2µA Breakdown voltage: 25V Peak pulse power dissipation: 47W Case - inch: 0201 Case - mm: 0603 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TS4448 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.125A; 9ns; 0603; Ufmax: 1V; Ifsm: 2A Type of diode: switching Case: 0603 Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Capacitance: 9pF Reverse recovery time: 9ns Power dissipation: 0.15W Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM085NB03CV RGG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1A; 52W; PDFN33 Case: PDFN33 Mounting: SMD Kind of package: tape Polarisation: unipolar Gate charge: 20nC On-state resistance: 8.5mΩ Power dissipation: 52W Drain current: 1A Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM220NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 23nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1N5408G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD Mounting: THT Load current: 3A Max. forward impulse current: 125A Max. off-state voltage: 1kV Case: DO201AD Type of diode: rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX84C10 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA Zener current: 5mA |
на замовлення 971 шт: термін постачання 21-30 дні (днів) |
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| SMAJ28A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SK510B | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ48CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ20CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.2V; 12.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BAT43W RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD Type of diode: Schottky switching Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P4SMA10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA Case: SMA Mounting: SMD Manufacturer series: P4SMA Type of diode: TVS Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Breakdown voltage: 9.5V Max. forward impulse current: 29A Peak pulse power dissipation: 0.4kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DBLS201G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 50A; DBLS Case: DBLS Max. forward voltage: 1.15V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 50V Type of bridge rectifier: single-phase Electrical mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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1.5KE16CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 67A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TS15P05G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 0.24kA Version: flat Case: TS-6P Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMBJ40CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 64A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SS36L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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TSM2301ACX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: tape Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Gate charge: 7.2nC On-state resistance: 0.13Ω Power dissipation: 0.45W Gate-source voltage: ±12V |
на замовлення 4684 шт: термін постачання 21-30 дні (днів) |
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| MBR60100PT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | |||||||||||||
| US1MHM2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying Type of diode: rectifying |
на замовлення 120000 шт: термін постачання 21-30 дні (днів) |
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| SMBJ26A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.9A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMBJ26AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.9A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES3J | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.7V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MBRF1645 C0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 16A; TO220FP-2; Ufmax: 630mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 16A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 0.63V Max. forward impulse current: 150A Kind of package: tube Max. load current: 32A |
на замовлення 161 шт: термін постачання 21-30 дні (днів) |
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| MBRF20H200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 10Ax2; ITO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.97V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF10H100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 950mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.95V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF10L100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 850mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.85V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BZD27C200P | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 200V; SMD; reel,tape; subSMA; single diode Case: subSMA Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Power dissipation: 1W Tolerance: ±6% Zener voltage: 200V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BZD27C200PW | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 200V; 50mA; SMD; reel,tape; SOD123W; single diode Case: SOD123W Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Zener current: 50mA Power dissipation: 1W Tolerance: ±5% Zener voltage: 200V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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1PGSMB5946 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 75V; 20mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 75V Zener current: 20mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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BZX85C13 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 13V; 20mA; tape; DO41; single diode; Ir: 500nA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 13V Zener current: 20mA Mounting: THT Tolerance: ±5% Kind of package: tape Case: DO41 Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 787 шт: термін постачання 21-30 дні (днів) |
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BZX85C11 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 11V; 20mA; tape; DO41; single diode; Ir: 500nA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 11V Zener current: 20mA Mounting: THT Tolerance: ±5% Kind of package: tape Case: DO41 Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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| SS14L RTG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 712500 шт: термін постачання 21-30 дні (днів) |
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| SS14LW RQG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 262500 шт: термін постачання 21-30 дні (днів) |
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| SS14M RSG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 18000 шт: термін постачання 21-30 дні (днів) |
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| BC337-16 A1G | TAIWAN SEMICONDUCTOR |
Category: UnclassifiedDescription: BC337-16 A1G |
на замовлення 400000 шт: термін постачання 21-30 дні (днів) |
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TSM4936DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.9A Power dissipation: 2.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of package: tape Kind of channel: enhancement |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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TSM4925DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.1A Power dissipation: 1.3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 70nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSM4946DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 30nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| ES1DL M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying Type of diode: rectifying |
на замовлення 45000 шт: термін постачання 21-30 дні (днів) |
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| ES1DL R3G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying Type of diode: rectifying |
на замовлення 114200 шт: термін постачання 21-30 дні (днів) |
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| ES1DV | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying Type of diode: rectifying |
на замовлення 22500 шт: термін постачання 21-30 дні (днів) |
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| SMAJ28CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ28CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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1N4007G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Capacitance: 10pF Features of semiconductor devices: glass passivated |
на замовлення 1059 шт: термін постачання 21-30 дні (днів) |
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BZT52C7V5 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 0.9µA Zener current: 5mA |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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BZX55C7V5 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 7.5V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Mounting: THT Tolerance: ±5% Kind of package: tape Case: DO35 Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 255 шт: термін постачання 21-30 дні (днів) |
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| SMCJ24A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 40A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1SMA5929 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 15V; SMD; reel,tape; DO214AC,SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: DO214AC; SMA Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
TS2581CS RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; SMD; 100kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 8...40V DC Case: SOP8 Mounting: SMD Frequency: 0.1MHz Topology: buck Number of channels: 1 Operating temperature: -20...125°C Kind of package: reel; tape Integrated circuit features: PWM |
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В кошику од. на суму грн. | ||||||||||||
| ES3G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.3V Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||
| ES3GBH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 3A; 35ns; SMB; Ufmax: 1.13V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1.13V Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||
| ES3GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||
| RS3MB-T | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying Type of diode: rectifying |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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| MBR1045 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Case: TO220AC
Forward voltage at If: 840mV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Case: TO220AC
Forward voltage at If: 840mV
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| MBRF30200CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 124.81 грн |
| 10+ | 104.63 грн |
| 50+ | 97.39 грн |
| MBR1660 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
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| MBR1660 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
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| TESDU12V RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 25W; 13V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 13V
Peak pulse power dissipation: 25W
Case - inch: 0201
Case - mm: 0603
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 25W; 13V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 13V
Peak pulse power dissipation: 25W
Case - inch: 0201
Case - mm: 0603
на замовлення 122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.67 грн |
| 29+ | 13.92 грн |
| 100+ | 10.30 грн |
| TESDU24V RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 25V
Peak pulse power dissipation: 47W
Case - inch: 0201
Case - mm: 0603
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 25V
Peak pulse power dissipation: 47W
Case - inch: 0201
Case - mm: 0603
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| TS4448 RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 0603; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Capacitance: 9pF
Reverse recovery time: 9ns
Power dissipation: 0.15W
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 0603; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Capacitance: 9pF
Reverse recovery time: 9ns
Power dissipation: 0.15W
Features of semiconductor devices: fast switching
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| TSM085NB03CV RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; 52W; PDFN33
Case: PDFN33
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 8.5mΩ
Power dissipation: 52W
Drain current: 1A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; 52W; PDFN33
Case: PDFN33
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 8.5mΩ
Power dissipation: 52W
Drain current: 1A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| TSM220NB06CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
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| 1N5408G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Mounting: THT
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Mounting: THT
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
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| BZX84C10 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Zener current: 5mA
на замовлення 971 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 70+ | 6.41 грн |
| 115+ | 3.65 грн |
| 500+ | 2.91 грн |
| SMAJ28A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| SK510B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
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| SMAJ48CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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| SMAJ20CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2V; 12.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2V; 12.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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| BAT43W RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
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| P4SMA10A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Peak pulse power dissipation: 0.4kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Peak pulse power dissipation: 0.4kW
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| DBLS201G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 50V
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 50V
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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| 1.5KE16CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 67A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 67A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Tolerance: ±5%
Kind of package: reel; tape
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| TS15P05G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| SMBJ40CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ15A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SS36L |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 10.23 грн |
| TSM2301ACX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Gate charge: 7.2nC
On-state resistance: 0.13Ω
Power dissipation: 0.45W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Gate charge: 7.2nC
On-state resistance: 0.13Ω
Power dissipation: 0.45W
Gate-source voltage: ±12V
на замовлення 4684 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.87 грн |
| 18+ | 22.70 грн |
| 100+ | 16.02 грн |
| 500+ | 13.12 грн |
| 1000+ | 12.23 грн |
| 3000+ | 11.03 грн |
| MBR60100PT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 500 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| US1MHM2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 120000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30000+ | 1.40 грн |
| SMBJ26A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMBJ26AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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| ES3J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| MBRF1645 C0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220FP-2; Ufmax: 630mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 0.63V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 32A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220FP-2; Ufmax: 630mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 0.63V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 32A
на замовлення 161 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 72.81 грн |
| 7+ | 61.17 грн |
| 25+ | 54.73 грн |
| 100+ | 53.93 грн |
| MBRF20H200CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.97V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.97V
Kind of package: tube
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| MBRF10H100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Kind of package: tube
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| MBRF10L100CT |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.85V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.85V
Kind of package: tube
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| BZD27C200P |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 200V; SMD; reel,tape; subSMA; single diode
Case: subSMA
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±6%
Zener voltage: 200V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 200V; SMD; reel,tape; subSMA; single diode
Case: subSMA
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±6%
Zener voltage: 200V
Kind of package: reel; tape
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| BZD27C200PW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 200V; 50mA; SMD; reel,tape; SOD123W; single diode
Case: SOD123W
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Zener current: 50mA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 200V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 200V; 50mA; SMD; reel,tape; SOD123W; single diode
Case: SOD123W
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Zener current: 50mA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 200V
Kind of package: reel; tape
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| 1PGSMB5946 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 75V; 20mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 75V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 75V; 20mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 75V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.00 грн |
| 20+ | 20.93 грн |
| 25+ | 20.77 грн |
| BZX85C13 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; 20mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Zener current: 20mA
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; 20mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Zener current: 20mA
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 787 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.67 грн |
| 27+ | 15.29 грн |
| 100+ | 8.45 грн |
| 500+ | 5.54 грн |
| BZX85C11 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 11V; 20mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 11V
Zener current: 20mA
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 11V; 20mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 11V
Zener current: 20mA
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 70+ | 6.50 грн |
| 100+ | 5.07 грн |
| SS14L RTG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 712500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 37500+ | 0.98 грн |
| SS14LW RQG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 262500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30000+ | 1.20 грн |
| SS14M RSG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9497+ | 3.71 грн |
| BC337-16 A1G |
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на замовлення 400000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 76000+ | 0.46 грн |
| TSM4936DCS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.9A
Power dissipation: 2.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.9A
Power dissipation: 2.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.20 грн |
| 12+ | 33.64 грн |
| 25+ | 29.86 грн |
| 100+ | 26.80 грн |
| TSM4925DCS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Power dissipation: 1.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Power dissipation: 1.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tape
Kind of channel: enhancement
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| TSM4946DCS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: tape
Kind of channel: enhancement
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| ES1DL M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 45000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11495+ | 3.07 грн |
| ES1DL R3G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 114200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8614+ | 4.09 грн |
| ES1DV |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 22500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 3.39 грн |
| SMAJ28CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ28CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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| 1N4007G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
на замовлення 1059 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.94 грн |
| 29+ | 14.17 грн |
| 35+ | 11.83 грн |
| 100+ | 5.78 грн |
| 500+ | 3.78 грн |
| 1000+ | 3.27 грн |
| BZT52C7V5 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.9µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.9µA
Zener current: 5mA
на замовлення 210 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.42 грн |
| 135+ | 2.99 грн |
| BZX55C7V5 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 255 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.42 грн |
| 155+ | 2.62 грн |
| SMCJ24A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| 1SMA5929 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
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| TS2581CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; SMD; 100kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 8...40V DC
Case: SOP8
Mounting: SMD
Frequency: 0.1MHz
Topology: buck
Number of channels: 1
Operating temperature: -20...125°C
Kind of package: reel; tape
Integrated circuit features: PWM
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; SMD; 100kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 8...40V DC
Case: SOP8
Mounting: SMD
Frequency: 0.1MHz
Topology: buck
Number of channels: 1
Operating temperature: -20...125°C
Kind of package: reel; tape
Integrated circuit features: PWM
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| ES3G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| ES3GBH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 35ns; SMB; Ufmax: 1.13V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.13V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 35ns; SMB; Ufmax: 1.13V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.13V
Kind of package: reel; tape
Application: automotive industry
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| ES3GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| RS3MB-T |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9000+ | 5.46 грн |















