Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (50261) > Сторінка 837 з 838

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HS1ML HS1ML TAIWAN SEMICONDUCTOR HS1AL SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; subSMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
17+26.66 грн
26+16.09 грн
100+10.07 грн
Мінімальне замовлення: 17 шт
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HS1MLWH HS1MLWH TAIWAN SEMICONDUCTOR HS1DLWH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MAL HS1MAL TAIWAN SEMICONDUCTOR HS1DAL SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS1MALH HS1MALH TAIWAN SEMICONDUCTOR HS1DALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MH HS1MH TAIWAN SEMICONDUCTOR HS1AH SERIES_B2401.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MLW HS1MLW TAIWAN SEMICONDUCTOR HS1DLW SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
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MBR1060 MBR1060 TAIWAN SEMICONDUCTOR MBR1060%20MBRB1060%20N0616%20REV.A.pdf MBR1035 SERIES_M2103.pdf mbr1060-d.pdf ds23009.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Case: TO220AC
Semiconductor structure: single diode
Max. forward impulse current: 150A
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: tube
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
12+37.33 грн
13+31.86 грн
38+25.01 грн
Мінімальне замовлення: 12 шт
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MBR1060 MBR1060 TAIWAN SEMICONDUCTOR MBR1060%20MBRB1060%20N0616%20REV.A.pdf MBR1035 SERIES_M2103.pdf mbr1060-d.pdf ds23009.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Forward voltage at If: 0.8V
Load current: 10A
Case: TO220AC
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P4KE30CA P4KE30CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5V; 10A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 10A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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HERF1008GH TAIWAN SEMICONDUCTOR HERF1001G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 80ns
Application: automotive industry
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HERF1004GH TAIWAN SEMICONDUCTOR HERF1001G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 50ns
Application: automotive industry
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HERF1006GH TAIWAN SEMICONDUCTOR HERF1001G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 80ns
Application: automotive industry
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HERF1007GH TAIWAN SEMICONDUCTOR HERF1001G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 80ns
Application: automotive industry
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HERF1008GAH TAIWAN SEMICONDUCTOR HERF1007GA SERIES_B2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 80ns
Application: automotive industry
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HERF1604GH TAIWAN SEMICONDUCTOR HERF1601G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 50ns
Application: automotive industry
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HERF1605GH TAIWAN SEMICONDUCTOR HERF1601G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 50ns
Application: automotive industry
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HERF1607GH TAIWAN SEMICONDUCTOR HERF1601G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
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BA158G-K BA158G-K TAIWAN SEMICONDUCTOR BA157G-K SERIES_B2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; DO41; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Reverse recovery time: 0.5µs
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P6SMB15A R4 P6SMB15A R4 TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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 Мінімальне замовлення: 3 шт
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TSS54U RGG TAIWAN SEMICONDUCTOR TSS54U_C1601.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Case - inch: 0603
Case - mm: 1608
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PUUP6DH PUUP6DH TAIWAN SEMICONDUCTOR PUUP6BH%20SERIES_C2109.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 410A; TO277A
Application: automotive industry
Mounting: THT
Max. forward impulse current: 410A
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
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PUUP6BH PUUP6BH TAIWAN SEMICONDUCTOR PUUP6BH%20SERIES_C2109.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; Ifsm: 410A; TO277A
Application: automotive industry
Mounting: THT
Max. forward impulse current: 410A
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
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SMAJ36A SMAJ36A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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1N4148 A0G 1N4148 A0G TAIWAN SEMICONDUCTOR 1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: DO35
Kind of package: Ammo Pack
Max. forward voltage: 1V
Reverse recovery time: 4ns
Max. load current: 0.45A
Capacitance: 4pF
Max. forward impulse current: 2A
на замовлення 4817 шт:
термін постачання 14-30 дні (днів)
56+8.00 грн
103+4.04 грн
146+2.84 грн
500+2.15 грн
1000+1.90 грн
1155+0.82 грн
3179+0.78 грн
Мінімальне замовлення: 56 шт
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BZD27C15P BZD27C15P TAIWAN SEMICONDUCTOR BZD27C_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; subSMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: subSMA
Semiconductor structure: single diode
Kind of package: reel; tape
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 Мінімальне замовлення: 5 шт
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BZD27C15PW BZD27C15PW TAIWAN SEMICONDUCTOR BZD27C11PW SERIES_D2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; SOD123W; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123W
Semiconductor structure: single diode
Kind of package: reel; tape
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GBPC3504 TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC3504W TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU404G KBU404G TAIWAN SEMICONDUCTOR KBU407G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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SR806 SR806 TAIWAN SEMICONDUCTOR SR802 SERIES_J2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 8A; DO201AD; Ufmax: 700mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.7V
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
9+51.55 грн
15+29.30 грн
100+18.57 грн
Мінімальне замовлення: 9 шт
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SR506 SR506 TAIWAN SEMICONDUCTOR SR502 SERIES_J2105.pdf description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5A; DO201AD; Ufmax: 700mV
Mounting: THT
Semiconductor structure: single diode
Case: DO201AD
Type of diode: Schottky rectifying
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 5A
на замовлення 163 шт:
термін постачання 14-30 дні (днів)
10+47.10 грн
15+29.38 грн
66+14.28 грн
Мінімальне замовлення: 10 шт
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DBLS105G TAIWAN SEMICONDUCTOR DBLS101G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 40A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
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DBLS104G TAIWAN SEMICONDUCTOR DBLS101G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 40A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
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HDBLS105G TAIWAN SEMICONDUCTOR HDBLS101G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.7V
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SSH210H SSH210H TAIWAN SEMICONDUCTOR SSH210H_B2310.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 75A
Max. forward voltage: 0.79V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
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 Мінімальне замовлення: 3000 шт
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BAS316WS RRG BAS316WS RRG TAIWAN SEMICONDUCTOR BAS316WS_F2212.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
21000+1.75 грн
Мінімальне замовлення: 21000 шт
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P4KE33A P4KE33A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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BZX85C43 R0G BZX85C43 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 43V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 43V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 640 шт:
термін постачання 14-30 дні (днів)
70+6.67 грн
100+5.20 грн
250+4.62 грн
Мінімальне замовлення: 70 шт
В кошику  од. на суму  грн.
TSD30H150CW MNG TSD30H150CW MNG TAIWAN SEMICONDUCTOR TSD30H100CW%20SERIES_C15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 30A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. forward impulse current: 200A
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BZX55B4V3 A0G BZX55B4V3 A0G TAIWAN SEMICONDUCTOR BZX55B2V4%20SERIES_F1610.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: THT
Tolerance: ±2%
Case: DO35
Semiconductor structure: single diode
на замовлення 605 шт:
термін постачання 14-30 дні (днів)
120+3.75 грн
130+3.29 грн
380+2.49 грн
Мінімальне замовлення: 120 шт
В кошику  од. на суму  грн.
BZT52B4V3S RRG BZT52B4V3S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S%20series_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 935 шт:
термін постачання 14-30 дні (днів)
90+5.07 грн
125+3.40 грн
250+2.70 грн
410+2.31 грн
Мінімальне замовлення: 90 шт
В кошику  од. на суму  грн.
BZS55C4V3 RXG BZS55C4V3 RXG TAIWAN SEMICONDUCTOR BZS55C2V4%20SERIES_D1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; 1206; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Case - inch: 1206
Case - mm: 3216
на замовлення 1666 шт:
термін постачання 14-30 дні (днів)
22+20.44 грн
34+12.38 грн
51+8.13 грн
100+6.19 грн
250+4.56 грн
406+2.33 грн
1116+2.20 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
TSCDF08065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDF08065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; tube
Max. off-state voltage: 650V
Load current: 8A
Case: ITO220AC
Kind of package: tube
Technology: SiC
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: THT
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SS14 SS14 TAIWAN SEMICONDUCTOR ss19-d.pdf pdf.php?pn=SS14 1779355572942137.pdf %5BLumimax%5DSS12~SS100.pdf 5399_SS14%20SMA.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.4V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
на замовлення 213 шт:
термін постачання 14-30 дні (днів)
18+25.77 грн
36+11.64 грн
50+9.72 грн
100+8.95 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
BZW04-28B BZW04-28B TAIWAN SEMICONDUCTOR cd00000693.pdf bzw045v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 31.4V; 8.8A; bidirectional; DO41; 0.4kW; BZW04
Mounting: THT
Breakdown voltage: 31.4V
Manufacturer series: BZW04
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Semiconductor structure: bidirectional
Case: DO41
Type of diode: TVS
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TSM170N06CH X0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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MBR10100 MBR10100 TAIWAN SEMICONDUCTOR MBR1035 SERIES_M2103.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
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TS1117BCW33 RPG TS1117BCW33 RPG TAIWAN SEMICONDUCTOR TS1117B_I2405.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Manufacturer series: TS1117B
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: SOT223
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 4.8...12V
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.5V
на замовлення 1985 шт:
термін постачання 14-30 дні (днів)
18+25.77 грн
21+19.97 грн
24+17.66 грн
28+15.10 грн
100+9.41 грн
275+8.91 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
TSCDF16065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDF16065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; ITO220AC; tube
Mounting: THT
Load current: 16A
Kind of package: tube
Semiconductor structure: single diode
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
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SS24LH SS24LH TAIWAN SEMICONDUCTOR SS22LH SERIES_A2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 40V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Type of diode: Schottky rectifying
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MBRAD860H TAIWAN SEMICONDUCTOR MBRAD860H_A2302.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 8A; reel,tape
Mounting: SMD
Case: thinDPAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
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TSM180P03CS RLG TSM180P03CS RLG TAIWAN SEMICONDUCTOR TSM180P03CS_A14.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 14.6nC
Kind of package: tape
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SMAJ15CA SMAJ15CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ SERIES_U2102.pdf 3372_SMAJ15CA00S0XM.pdf SMAJ15CA%20SMA%28DO-214AC%29.PDF GK-SMAJ_SERIES-202604.pdf 5272_SMAJ15CA.pdf 1779949183703366.pdf SMAJ%20Series%20Rev-1.pdf smaj%20series(400w,5v_440v).pdf 824501151.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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TSM3N90CH C5G TAIWAN SEMICONDUCTOR TSM3N90_D15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 5.1Ω
Power dissipation: 94W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 900V
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TSM3N90CZ C0G TSM3N90CZ C0G TAIWAN SEMICONDUCTOR TSM3N90_D15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 5.1Ω
Power dissipation: 94W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 900V
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MUR340S TAIWAN SEMICONDUCTOR MUR305S SERIES_J2212.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Kind of package: reel; tape
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MUR340SBH MUR340SBH TAIWAN SEMICONDUCTOR MUR340SBH SERIES_B2211.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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MUR340SH TAIWAN SEMICONDUCTOR MUR305SH SERIES_B2212.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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SMA6J30A SMA6J30A TAIWAN SEMICONDUCTOR SMA6J-Q.pdf SMA6J SERIES_E2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
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SMA6J15A SMA6J15A TAIWAN SEMICONDUCTOR SMA6J-Q.pdf tvs-diodes-sma6j-datasheet?assetguid=1bf347a3-17d1-4456-ac34-423c2a51943b Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.4A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
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HS1ML HS1AL SERIES_C2103.pdf
HS1ML
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; subSMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
17+26.66 грн
26+16.09 грн
100+10.07 грн
Мінімальне замовлення: 17 шт
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HS1MLWH HS1DLWH SERIES_A2103.pdf
HS1MLWH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MAL HS1DAL SERIES_D2103.pdf
HS1MAL
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS1MALH HS1DALH SERIES_B2103.pdf
HS1MALH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MH HS1AH SERIES_B2401.pdf
HS1MH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MLW HS1DLW SERIES_C2103.pdf
HS1MLW
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
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MBR1060 MBR1060%20MBRB1060%20N0616%20REV.A.pdf MBR1035 SERIES_M2103.pdf mbr1060-d.pdf ds23009.pdf
MBR1060
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Case: TO220AC
Semiconductor structure: single diode
Max. forward impulse current: 150A
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: tube
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+37.33 грн
13+31.86 грн
38+25.01 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
MBR1060 MBR1060%20MBRB1060%20N0616%20REV.A.pdf MBR1035 SERIES_M2103.pdf mbr1060-d.pdf ds23009.pdf
MBR1060
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Forward voltage at If: 0.8V
Load current: 10A
Case: TO220AC
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P4KE30CA littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf
P4KE30CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 28.5V; 10A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 10A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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HERF1008GH HERF1001G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 80ns
Application: automotive industry
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HERF1004GH HERF1001G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 50ns
Application: automotive industry
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HERF1006GH HERF1001G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 80ns
Application: automotive industry
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HERF1007GH HERF1001G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 80ns
Application: automotive industry
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HERF1008GAH HERF1007GA SERIES_B2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 80ns
Application: automotive industry
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HERF1604GH HERF1601G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 50ns
Application: automotive industry
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HERF1605GH HERF1601G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 50ns
Application: automotive industry
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HERF1607GH HERF1601G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
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BA158G-K BA157G-K SERIES_B2104.pdf
BA158G-K
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; DO41; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Reverse recovery time: 0.5µs
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P6SMB15A R4 P6SMB_ser.pdf
P6SMB15A R4
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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Мінімальне замовлення: 3 шт
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TSS54U RGG TSS54U_C1601.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Case - inch: 0603
Case - mm: 1608
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PUUP6DH PUUP6BH%20SERIES_C2109.pdf
PUUP6DH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 410A; TO277A
Application: automotive industry
Mounting: THT
Max. forward impulse current: 410A
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
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PUUP6BH PUUP6BH%20SERIES_C2109.pdf
PUUP6BH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; Ifsm: 410A; TO277A
Application: automotive industry
Mounting: THT
Max. forward impulse current: 410A
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Case: TO277A
Type of diode: rectifying
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SMAJ36A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
SMAJ36A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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1N4148 A0G 1N4448.pdf
1N4148 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: DO35
Kind of package: Ammo Pack
Max. forward voltage: 1V
Reverse recovery time: 4ns
Max. load current: 0.45A
Capacitance: 4pF
Max. forward impulse current: 2A
на замовлення 4817 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
56+8.00 грн
103+4.04 грн
146+2.84 грн
500+2.15 грн
1000+1.90 грн
1155+0.82 грн
3179+0.78 грн
Мінімальне замовлення: 56 шт
В кошику  од. на суму  грн.
BZD27C15P BZD27C_SER.pdf
BZD27C15P
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; subSMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: subSMA
Semiconductor structure: single diode
Kind of package: reel; tape
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Мінімальне замовлення: 5 шт
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BZD27C15PW BZD27C11PW SERIES_D2203.pdf
BZD27C15PW
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; SOD123W; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123W
Semiconductor structure: single diode
Kind of package: reel; tape
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GBPC3504 GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC3504W GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU404G KBU407G_ser.pdf
KBU404G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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SR806 SR802 SERIES_J2105.pdf
SR806
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 8A; DO201AD; Ufmax: 700mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.7V
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+51.55 грн
15+29.30 грн
100+18.57 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
SR506 description SR502 SERIES_J2105.pdf
SR506
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5A; DO201AD; Ufmax: 700mV
Mounting: THT
Semiconductor structure: single diode
Case: DO201AD
Type of diode: Schottky rectifying
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 5A
на замовлення 163 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+47.10 грн
15+29.38 грн
66+14.28 грн
Мінімальне замовлення: 10 шт
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DBLS105G DBLS101G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 40A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
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DBLS104G DBLS101G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 40A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
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HDBLS105G HDBLS101G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.7V
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SSH210H SSH210H_B2310.pdf
SSH210H
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 75A
Max. forward voltage: 0.79V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS316WS RRG BAS316WS_F2212.pdf
BAS316WS RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
21000+1.75 грн
Мінімальне замовлення: 21000 шт
В кошику  од. на суму  грн.
P4KE33A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf
P4KE33A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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BZX85C43 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C43 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 43V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 43V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 640 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
70+6.67 грн
100+5.20 грн
250+4.62 грн
Мінімальне замовлення: 70 шт
В кошику  од. на суму  грн.
TSD30H150CW MNG TSD30H100CW%20SERIES_C15.pdf
TSD30H150CW MNG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 30A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. forward impulse current: 200A
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BZX55B4V3 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B4V3 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: THT
Tolerance: ±2%
Case: DO35
Semiconductor structure: single diode
на замовлення 605 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
120+3.75 грн
130+3.29 грн
380+2.49 грн
Мінімальне замовлення: 120 шт
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BZT52B4V3S RRG BZT52B2V4S%20series_G1804.pdf
BZT52B4V3S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 935 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
90+5.07 грн
125+3.40 грн
250+2.70 грн
410+2.31 грн
Мінімальне замовлення: 90 шт
В кошику  од. на суму  грн.
BZS55C4V3 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C4V3 RXG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; 1206; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Case - inch: 1206
Case - mm: 3216
на замовлення 1666 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
22+20.44 грн
34+12.38 грн
51+8.13 грн
100+6.19 грн
250+4.56 грн
406+2.33 грн
1116+2.20 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
TSCDF08065G1 pdf.php?pn=TSCDF08065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; tube
Max. off-state voltage: 650V
Load current: 8A
Case: ITO220AC
Kind of package: tube
Technology: SiC
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: THT
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SS14 ss19-d.pdf pdf.php?pn=SS14 1779355572942137.pdf %5BLumimax%5DSS12~SS100.pdf 5399_SS14%20SMA.PDF
SS14
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.4V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
на замовлення 213 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+25.77 грн
36+11.64 грн
50+9.72 грн
100+8.95 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
BZW04-28B cd00000693.pdf bzw045v8.pdf
BZW04-28B
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 31.4V; 8.8A; bidirectional; DO41; 0.4kW; BZW04
Mounting: THT
Breakdown voltage: 31.4V
Manufacturer series: BZW04
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Semiconductor structure: bidirectional
Case: DO41
Type of diode: TVS
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TSM170N06CH X0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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MBR10100 MBR1035 SERIES_M2103.pdf
MBR10100
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
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TS1117BCW33 RPG TS1117B_I2405.pdf
TS1117BCW33 RPG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Manufacturer series: TS1117B
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: SOT223
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 4.8...12V
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.5V
на замовлення 1985 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+25.77 грн
21+19.97 грн
24+17.66 грн
28+15.10 грн
100+9.41 грн
275+8.91 грн
Мінімальне замовлення: 18 шт
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TSCDF16065G1 pdf.php?pn=TSCDF16065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; ITO220AC; tube
Mounting: THT
Load current: 16A
Kind of package: tube
Semiconductor structure: single diode
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
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SS24LH SS22LH SERIES_A2103.pdf
SS24LH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 40V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Type of diode: Schottky rectifying
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MBRAD860H MBRAD860H_A2302.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 8A; reel,tape
Mounting: SMD
Case: thinDPAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.75V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
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TSM180P03CS RLG TSM180P03CS_A14.pdf
TSM180P03CS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 14.6nC
Kind of package: tape
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SMAJ15CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ SERIES_U2102.pdf 3372_SMAJ15CA00S0XM.pdf SMAJ15CA%20SMA%28DO-214AC%29.PDF GK-SMAJ_SERIES-202604.pdf 5272_SMAJ15CA.pdf 1779949183703366.pdf SMAJ%20Series%20Rev-1.pdf smaj%20series(400w,5v_440v).pdf 824501151.pdf
SMAJ15CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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TSM3N90CH C5G TSM3N90_D15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 5.1Ω
Power dissipation: 94W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 900V
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TSM3N90CZ C0G TSM3N90_D15.pdf
TSM3N90CZ C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 5.1Ω
Power dissipation: 94W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 900V
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MUR340S MUR305S SERIES_J2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Kind of package: reel; tape
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MUR340SBH MUR340SBH SERIES_B2211.pdf
MUR340SBH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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MUR340SH MUR305SH SERIES_B2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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SMA6J30A SMA6J-Q.pdf SMA6J SERIES_E2102.pdf
SMA6J30A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
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SMA6J15A SMA6J-Q.pdf tvs-diodes-sma6j-datasheet?assetguid=1bf347a3-17d1-4456-ac34-423c2a51943b
SMA6J15A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.4A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
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