Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (50261) > Сторінка 834 з 838

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SR110 SR110 TAIWAN SEMICONDUCTOR SR102 SERIES_G2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
на замовлення 509 шт:
термін постачання 14-30 дні (днів)
20+22.22 грн
30+14.03 грн
100+8.09 грн
500+5.69 грн
Мінімальне замовлення: 20 шт
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SMCJ36CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ15A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM100N06CZ C0G TSM100N06CZ C0G TAIWAN SEMICONDUCTOR TSM100N06.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 81nC
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P6SMB200A R4 P6SMB200A R4 TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
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MUR1640CT MUR1640CT TAIWAN SEMICONDUCTOR mur1620ct-d.pdf MUR1620CT SERIES_I2104.pdf 1736905156130478.pdf GK-TO-220AB_MUR1605CT_THRU_MUR16100CT-2025.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AB
Reverse recovery time: 50ns
Max. load current: 16A
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MUR1640CTH MUR1640CTH TAIWAN SEMICONDUCTOR MUR1620CT SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
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SFF2004GAH TAIWAN SEMICONDUCTOR SFF2004GA SERIES_F2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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SFF2004GH TAIWAN SEMICONDUCTOR SFF2001G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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SF2004GH SF2004GH TAIWAN SEMICONDUCTOR SF2001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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SF2004PTH TAIWAN SEMICONDUCTOR SF2001PT SERIES_I2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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TS25P07G TS25P07G TAIWAN SEMICONDUCTOR TS25P01G SERIES_Q2203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Max. forward impulse current: 350A
Max. forward voltage: 1.1V
Version: flat
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 25A
Case: TS-6P
Type of bridge rectifier: single-phase
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
4+145.76 грн
5+122.14 грн
15+113.06 грн
Мінімальне замовлення: 4 шт
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TS50P06G TS50P06G TAIWAN SEMICONDUCTOR TS50P07G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 50A; Ifsm: 400A
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 50A
Kind of package: tube
Case: TS-6P
Type of bridge rectifier: single-phase
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
2+254.19 грн
7+151.85 грн
10+143.60 грн
Мінімальне замовлення: 2 шт
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MBRAD20100H TAIWAN SEMICONDUCTOR MBRAD20100H_A2303.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Application: automotive industry
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SMBJ28A SMBJ28A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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BZT52C20 RHG BZT52C20 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 850 шт:
термін постачання 14-30 дні (днів)
105+4.27 грн
145+2.89 грн
250+2.29 грн
Мінімальне замовлення: 105 шт
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1PGSMB5955 1PGSMB5955 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 180V
Type of diode: Zener
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
17+26.66 грн
23+17.99 грн
Мінімальне замовлення: 17 шт
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GBU805 GBU805 TAIWAN SEMICONDUCTOR GBU807_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
4+115.54 грн
10+77.58 грн
20+67.67 грн
Мінімальне замовлення: 4 шт
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BAV19WS RRG BAV19WS RRG TAIWAN SEMICONDUCTOR BAV19WS SERIES_K2212.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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 Мінімальне замовлення: 10 шт
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SMBJ15CA R5G SMBJ15CA R5G TAIWAN SEMICONDUCTOR SMBJ%20SERIES_R2104.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 7650 шт:
термін постачання 14-30 дні (днів)
3400+11.02 грн
Мінімальне замовлення: 3400 шт
В кошику  од. на суму  грн.
SMCJ33A SMCJ33A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM260P02CX6 RFG TSM260P02CX6 RFG TAIWAN SEMICONDUCTOR TSM260P02CX6_A2312.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -20V; -6.5A; 1.56W; SOT26
Mounting: SMD
Power dissipation: 1.56W
Drain current: -6.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Case: SOT26
на замовлення 7000 шт:
термін постачання 14-30 дні (днів)
3000+16.35 грн
Мінімальне замовлення: 3000 шт
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1N5402G TAIWAN SEMICONDUCTOR 1N5400-D.PDF 1N5400G SERIES_K2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
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 Мінімальне замовлення: 5 шт
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1PGSMB5929 1PGSMB5929 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
15+30.22 грн
21+19.97 грн
25+19.15 грн
Мінімальне замовлення: 15 шт
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1SMA5929 1SMA5929 TAIWAN SEMICONDUCTOR 1SMA5926 SERIES_L2102.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; DO214AC,SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Semiconductor structure: single diode
Kind of package: reel; tape
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P4SMA18A P4SMA18A TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 FAIRS26436-1.pdf?t.download=true&u=5oefqw Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
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P4SMA18CA P4SMA18CA TAIWAN SEMICONDUCTOR P4SMA SERIES_S2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
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P4SMA18AH P4SMA18AH TAIWAN SEMICONDUCTOR P4SMAH SERIES_A2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Max. off-state voltage: 15.3V
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SS19 SS19 TAIWAN SEMICONDUCTOR ss19-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Case: SMA
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.8V
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SS19L SS19L TAIWAN SEMICONDUCTOR SS12L SERIES_Q2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 90V; 1A; reel,tape
Case: subSMA
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.8V
на замовлення 499 шт:
термін постачання 14-30 дні (днів)
15+30.22 грн
25+17.08 грн
100+11.06 грн
250+9.41 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
SMF100A TAIWAN SEMICONDUCTOR tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 111V; 1.08A; unidirectional; SOD123W; reel,tape
Case: SOD123W
Mounting: SMD
Type of diode: TVS
Breakdown voltage: 111V
Max. forward impulse current: 1.08A
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Semiconductor structure: unidirectional
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1.5SMC36CAH 1.5SMC36CAH TAIWAN SEMICONDUCTOR 1.5SMCH SERIES_B2207.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 1.5SMC
на замовлення 495 шт:
термін постачання 14-30 дні (днів)
12+39.99 грн
17+25.25 грн
25+22.70 грн
100+20.05 грн
Мінімальне замовлення: 12 шт
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5KSMC36AH TAIWAN SEMICONDUCTOR 5KSMC10AH%20SERIES_A2012.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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 Мінімальне замовлення: 3000 шт
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1.5SMC36CA 1.5SMC36CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 1.5SMC.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC36A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC36AH TAIWAN SEMICONDUCTOR 1.5SMCH SERIES_B2207.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
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SMCJ75A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ75AH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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TSM025NB04CR RLG TAIWAN SEMICONDUCTOR TSMxxxNB0x_Newsletter.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
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BZW04-58 BZW04-58 TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.3A; unidirectional; DO41; BZW04
Mounting: THT
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Semiconductor structure: unidirectional
Case: DO41
Type of diode: TVS
Breakdown voltage: 64.6V
Manufacturer series: BZW04
Max. forward impulse current: 4.3A
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BZW04-5V8B BZW04-5V8B TAIWAN SEMICONDUCTOR cd00000693.pdf bzw045v8.pdf BZW04 SERIES_J2104.pdf description Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45V; 38A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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BZW04-5V8 BZW04-5V8 TAIWAN SEMICONDUCTOR cd00000693.pdf bzw045v8.pdf BZW04 SERIES_J2104.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 6.45V; 38A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 38A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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BZW04-58B BZW04-58B TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 64.6V; 4.3A; bidirectional; DO41; 0.4kW; BZW04
Mounting: THT
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Semiconductor structure: bidirectional
Case: DO41
Type of diode: TVS
Breakdown voltage: 64.6V
Manufacturer series: BZW04
Max. forward impulse current: 4.3A
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SF804GH SF804GH TAIWAN SEMICONDUCTOR SF801G%20SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 8A
Reverse recovery time: 35ns
Application: automotive industry
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TBS410 TBS410 TAIWAN SEMICONDUCTOR TBS406%20SERIES_B2103.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 110A; TBS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 110A
Case: TBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.96V
Features of semiconductor devices: glass passivated
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
9+55.10 грн
12+36.39 грн
100+24.02 грн
Мінімальне замовлення: 9 шт
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MBRF20H100CT TAIWAN SEMICONDUCTOR MBRF20H100CT SERIES_I2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Kind of package: tube
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MBRF30200CT MBRF30200CT TAIWAN SEMICONDUCTOR littelfuse_power_semiconductor_schottky_diode_mbrf30200ct_datasheet.pdf?assetguid=326d14e5-aee8-4008-9c6a-fe82abc7599f GK-ITO-220AB_MBRF3020CT_THRU_MBRF30200CT-2025.pdf MBRF30200CT%20N0855%20REV.B.pdf MBRF3035CT SERIES_M2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
4+127.98 грн
10+107.29 грн
Мінімальне замовлення: 4 шт
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MBRF30200CT MBRF30200CT TAIWAN SEMICONDUCTOR littelfuse_power_semiconductor_schottky_diode_mbrf30200ct_datasheet.pdf?assetguid=326d14e5-aee8-4008-9c6a-fe82abc7599f GK-ITO-220AB_MBRF3020CT_THRU_MBRF30200CT-2025.pdf MBRF30200CT%20N0855%20REV.B.pdf MBRF3035CT SERIES_M2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
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SR310 SR310 TAIWAN SEMICONDUCTOR SR302 SERIES_J2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
10+47.99 грн
13+33.51 грн
15+28.31 грн
Мінімальне замовлення: 10 шт
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GBPC3508 TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC3508W TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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SMAJ100A SMAJ100A TAIWAN SEMICONDUCTOR 824500102.pdf SMAJ.pdf 3372_SMAJ100A00S0RZ.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf GK-SMAJ_SERIES-2025.pdf view?usp=sharing smaj%20series(400w,5v_440v).pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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 Мінімальне замовлення: 7500 шт
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SMAJ70A SMAJ70A TAIWAN SEMICONDUCTOR 824500701.pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf 5399_SMAJ70A%20SMA.PDF GK-SMAJ_SERIES-2025.pdf 3372_SMAJ70A000S0RP.pdf smaj%20series(400w,5v_440v).pdf SMAJ SERIES_U2102.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8V; 3.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ70CA SMAJ70CA TAIWAN SEMICONDUCTOR 824501701.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8V; 3.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMBJ70CA SMBJ70CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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BZY55B2V7 RYG BZY55B2V7 RYG TAIWAN SEMICONDUCTOR BZY55B2V4%20SERIES_C1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; 0805; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
Case - inch: 0805
Case - mm: 2012
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
40+10.67 грн
Мінімальне замовлення: 40 шт
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BZX85C47 R0G BZX85C47 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 47V; DO41; single diode; tape
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Semiconductor structure: single diode
Case: DO41
Zener voltage: 47V
Type of diode: Zener
Power dissipation: 1.3W
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
21+21.33 грн
28+14.94 грн
100+8.72 грн
Мінімальне замовлення: 21 шт
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SMAJ33A SMAJ33A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 6284 шт:
термін постачання 14-30 дні (днів)
16+28.44 грн
22+18.90 грн
100+9.92 грн
248+3.81 грн
681+3.61 грн
Мінімальне замовлення: 16 шт
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BZD27C33PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 33V; SMD; SOD123W; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD123W
Semiconductor structure: single diode
Kind of package: reel; tape
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SMF4L33AH TAIWAN SEMICONDUCTOR SMF4L5.0AH SERIES_ A2310.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; SOD123W; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
10000+6.22 грн
Мінімальне замовлення: 10000 шт
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SR110 SR102 SERIES_G2104.pdf
SR110
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
на замовлення 509 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.22 грн
30+14.03 грн
100+8.09 грн
500+5.69 грн
Мінімальне замовлення: 20 шт
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SMCJ36CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ15A SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM100N06CZ C0G TSM100N06.pdf
TSM100N06CZ C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 81nC
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P6SMB200A R4 P6SMB_ser.pdf
P6SMB200A R4
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
товару немає в наявності
Мінімальне замовлення: 3 шт
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MUR1640CT mur1620ct-d.pdf MUR1620CT SERIES_I2104.pdf 1736905156130478.pdf GK-TO-220AB_MUR1605CT_THRU_MUR16100CT-2025.pdf
MUR1640CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AB
Reverse recovery time: 50ns
Max. load current: 16A
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MUR1640CTH MUR1620CT SERIES_I2104.pdf
MUR1640CTH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
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SFF2004GAH SFF2004GA SERIES_F2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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SFF2004GH SFF2001G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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SF2004GH SF2001G SERIES_I2104.pdf
SF2004GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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SF2004PTH SF2001PT SERIES_I2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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TS25P07G TS25P01G SERIES_Q2203.pdf
TS25P07G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Max. forward impulse current: 350A
Max. forward voltage: 1.1V
Version: flat
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 25A
Case: TS-6P
Type of bridge rectifier: single-phase
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+145.76 грн
5+122.14 грн
15+113.06 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
TS50P06G TS50P07G_ser.pdf
TS50P06G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 50A; Ifsm: 400A
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 50A
Kind of package: tube
Case: TS-6P
Type of bridge rectifier: single-phase
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+254.19 грн
7+151.85 грн
10+143.60 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MBRAD20100H MBRAD20100H_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Application: automotive industry
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SMBJ28A SMBJ.pdf
SMBJ28A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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BZT52C20 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C20 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 850 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
105+4.27 грн
145+2.89 грн
250+2.29 грн
Мінімальне замовлення: 105 шт
В кошику  од. на суму  грн.
1PGSMB5955
1PGSMB5955
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 180V
Type of diode: Zener
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
17+26.66 грн
23+17.99 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
GBU805 GBU807_ser.pdf
GBU805
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+115.54 грн
10+77.58 грн
20+67.67 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BAV19WS RRG BAV19WS SERIES_K2212.pdf
BAV19WS RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
SMBJ15CA R5G SMBJ%20SERIES_R2104.pdf
SMBJ15CA R5G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 7650 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3400+11.02 грн
Мінімальне замовлення: 3400 шт
В кошику  од. на суму  грн.
SMCJ33A SMCJ.pdf
SMCJ33A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM260P02CX6 RFG TSM260P02CX6_A2312.pdf
TSM260P02CX6 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -20V; -6.5A; 1.56W; SOT26
Mounting: SMD
Power dissipation: 1.56W
Drain current: -6.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Case: SOT26
на замовлення 7000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3000+16.35 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
1N5402G 1N5400-D.PDF 1N5400G SERIES_K2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
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Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
1PGSMB5929
1PGSMB5929
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
15+30.22 грн
21+19.97 грн
25+19.15 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
1SMA5929 1SMA5926 SERIES_L2102.pdf
1SMA5929
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; DO214AC,SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Semiconductor structure: single diode
Kind of package: reel; tape
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P4SMA18A tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 FAIRS26436-1.pdf?t.download=true&u=5oefqw
P4SMA18A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
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P4SMA18CA P4SMA SERIES_S2102.pdf
P4SMA18CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
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P4SMA18AH P4SMAH SERIES_A2102.pdf
P4SMA18AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Max. off-state voltage: 15.3V
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SS19 ss19-d.pdf
SS19
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Case: SMA
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.8V
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SS19L SS12L SERIES_Q2103.pdf
SS19L
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 90V; 1A; reel,tape
Case: subSMA
Max. off-state voltage: 90V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.8V
на замовлення 499 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
15+30.22 грн
25+17.08 грн
100+11.06 грн
250+9.41 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
SMF100A tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 111V; 1.08A; unidirectional; SOD123W; reel,tape
Case: SOD123W
Mounting: SMD
Type of diode: TVS
Breakdown voltage: 111V
Max. forward impulse current: 1.08A
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Semiconductor structure: unidirectional
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1.5SMC36CAH 1.5SMCH SERIES_B2207.pdf
1.5SMC36CAH
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 1.5SMC
на замовлення 495 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+39.99 грн
17+25.25 грн
25+22.70 грн
100+20.05 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
5KSMC36AH 5KSMC10AH%20SERIES_A2012.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40÷44.2V; 86A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 86A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
1.5SMC36CA littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 1.5SMC.pdf
1.5SMC36CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC36A littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC36AH 1.5SMCH SERIES_B2207.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
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SMCJ75A SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ75AH SMCJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 83.3÷92.1V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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TSM025NB04CR RLG TSMxxxNB0x_Newsletter.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
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BZW04-58 bzw045v8.pdf
BZW04-58
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.3A; unidirectional; DO41; BZW04
Mounting: THT
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Semiconductor structure: unidirectional
Case: DO41
Type of diode: TVS
Breakdown voltage: 64.6V
Manufacturer series: BZW04
Max. forward impulse current: 4.3A
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BZW04-5V8B description cd00000693.pdf bzw045v8.pdf BZW04 SERIES_J2104.pdf
BZW04-5V8B
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45V; 38A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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BZW04-5V8 cd00000693.pdf bzw045v8.pdf BZW04 SERIES_J2104.pdf
BZW04-5V8
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 6.45V; 38A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 38A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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BZW04-58B bzw045v8.pdf
BZW04-58B
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 64.6V; 4.3A; bidirectional; DO41; 0.4kW; BZW04
Mounting: THT
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Semiconductor structure: bidirectional
Case: DO41
Type of diode: TVS
Breakdown voltage: 64.6V
Manufacturer series: BZW04
Max. forward impulse current: 4.3A
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SF804GH SF801G%20SERIES_I2104.pdf
SF804GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 8A
Reverse recovery time: 35ns
Application: automotive industry
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TBS410 TBS406%20SERIES_B2103.pdf
TBS410
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 110A; TBS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 110A
Case: TBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.96V
Features of semiconductor devices: glass passivated
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+55.10 грн
12+36.39 грн
100+24.02 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
MBRF20H100CT MBRF20H100CT SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Kind of package: tube
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MBRF30200CT littelfuse_power_semiconductor_schottky_diode_mbrf30200ct_datasheet.pdf?assetguid=326d14e5-aee8-4008-9c6a-fe82abc7599f GK-ITO-220AB_MBRF3020CT_THRU_MBRF30200CT-2025.pdf MBRF30200CT%20N0855%20REV.B.pdf MBRF3035CT SERIES_M2105.pdf
MBRF30200CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+127.98 грн
10+107.29 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
MBRF30200CT littelfuse_power_semiconductor_schottky_diode_mbrf30200ct_datasheet.pdf?assetguid=326d14e5-aee8-4008-9c6a-fe82abc7599f GK-ITO-220AB_MBRF3020CT_THRU_MBRF30200CT-2025.pdf MBRF30200CT%20N0855%20REV.B.pdf MBRF3035CT SERIES_M2105.pdf
MBRF30200CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
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SR310 SR302 SERIES_J2105.pdf
SR310
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+47.99 грн
13+33.51 грн
15+28.31 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
GBPC3508 GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC3508W GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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SMAJ100A 824500102.pdf SMAJ.pdf 3372_SMAJ100A00S0RZ.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf GK-SMAJ_SERIES-2025.pdf view?usp=sharing smaj%20series(400w,5v_440v).pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf
SMAJ100A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
SMAJ70A 824500701.pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf 5399_SMAJ70A%20SMA.PDF GK-SMAJ_SERIES-2025.pdf 3372_SMAJ70A000S0RP.pdf smaj%20series(400w,5v_440v).pdf SMAJ SERIES_U2102.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf
SMAJ70A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8V; 3.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ70CA 824501701.pdf
SMAJ70CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8V; 3.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMBJ70CA SMBJ.pdf
SMBJ70CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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BZY55B2V7 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B2V7 RYG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; 0805; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
Case - inch: 0805
Case - mm: 2012
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
40+10.67 грн
Мінімальне замовлення: 40 шт
В кошику  од. на суму  грн.
BZX85C47 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C47 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 47V; DO41; single diode; tape
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Semiconductor structure: single diode
Case: DO41
Zener voltage: 47V
Type of diode: Zener
Power dissipation: 1.3W
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
21+21.33 грн
28+14.94 грн
100+8.72 грн
Мінімальне замовлення: 21 шт
В кошику  од. на суму  грн.
SMAJ33A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
SMAJ33A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 6284 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
16+28.44 грн
22+18.90 грн
100+9.92 грн
248+3.81 грн
681+3.61 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
BZD27C33PWH BZD27C11PWH SERIES_B2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 33V; SMD; SOD123W; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD123W
Semiconductor structure: single diode
Kind of package: reel; tape
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SMF4L33AH SMF4L5.0AH SERIES_ A2310.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; SOD123W; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10000+6.22 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.