Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (50226) > Сторінка 834 з 838
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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| 1.5SMC24A V7G | TAIWAN SEMICONDUCTOR |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 22.8V; 47A; unidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20.5V Breakdown voltage: 22.8V Max. forward impulse current: 47A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Number of channels: 1 Manufacturer series: 1.5SMC |
на замовлення 9350 шт: термін постачання 14-30 дні (днів) |
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TS2509CS RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 3.6÷23VDC; Uout: 0.8÷23VDC; 3A; SOP8 Input voltage: 3.6...23V DC Output voltage: 0.8...23V DC Output current: 3A Case: SOP8 Mounting: SMD Operating temperature: -20...125°C Type of integrated circuit: PMIC Integrated circuit features: PWM Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Number of channels: 1 Frequency: 0.5MHz Topology: buck |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMCJ5.0CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 171A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 2mA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ5.0CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 171A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 2mA Manufacturer series: SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| RSFBL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 150ns; subSMA; Ufmax: 1.3V Mounting: SMD Case: subSMA Max. forward voltage: 1.3V Max. off-state voltage: 0.1kV Load current: 0.5A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 150ns |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||
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BZW04-20 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.4kW; 22.8V; 12A; unidirectional; DO41; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20.5V Breakdown voltage: 22.8V Max. forward impulse current: 12A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZW04-20B | TAIWAN SEMICONDUCTOR |
 Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 22.8V; 12A; bidirectional; DO41; 0.4kW; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20.5V Breakdown voltage: 22.8V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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S1M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Kind of package: reel; tape Max. forward impulse current: 30A Capacitance: 12pF |
на замовлення 3769 шт: термін постачання 14-30 дні (днів) |
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| 1SMA4742 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener Type of diode: Zener |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | |||||||||||||
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SMAJ26CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSCDH20065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 20A Max. forward impulse current: 76A Leakage current: 0.2mA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZT52B8V2S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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| TSZU52C13 RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 13V; SMD; 0603; single diode; reel,tape Type of diode: Zener Power dissipation: 0.15W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case - inch: 0603 Case - mm: 1608 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 400 шт: термін постачання 14-30 дні (днів) |
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TS2581CS RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; SMD; 100kHz; Ch: 1 Mounting: SMD Number of channels: 1 Case: SOP8 Type of integrated circuit: PMIC Operating temperature: -20...125°C Integrated circuit features: PWM Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Frequency: 0.1MHz Topology: buck Input voltage: 8...40V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P4SMA6.8CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5.8V Breakdown voltage: 6.46V Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA Max. forward impulse current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P4SMA6.8A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5.8V Breakdown voltage: 6.46V Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA Max. forward impulse current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P4SMA68CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; bidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58.1V Breakdown voltage: 64.6V Max. forward impulse current: 4.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P4SMA68A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58.1V Breakdown voltage: 64.6V Max. forward impulse current: 4.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSL14 M2G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 50A Max. forward voltage: 0.39V |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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B0540W RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.62V Max. forward impulse current: 5.5A Kind of package: reel; tape Capacitance: 170pF |
на замовлення 196 шт: термін постачання 14-30 дні (днів) |
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SF16G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns Mounting: THT Features of semiconductor devices: superfast switching Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Case: DO41 Type of diode: rectifying Reverse recovery time: 35ns Max. forward impulse current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SF1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Max. load current: 16A Reverse recovery time: 35ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SF1604GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns Mounting: THT Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 200V Load current: 8A x2 Max. load current: 16A Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SF1604PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry Mounting: THT Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 200V Load current: 8A x2 Max. load current: 16A Semiconductor structure: common cathode; double Case: TO3P Type of diode: rectifying Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SF1606GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns Mounting: THT Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 0.4kV Load current: 8A x2 Max. load current: 16A Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying Reverse recovery time: 35ns Max. forward impulse current: 125A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SF1606PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry Mounting: THT Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 0.4kV Load current: 8A x2 Max. load current: 16A Semiconductor structure: common cathode; double Case: TO3P Type of diode: rectifying Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SF1608PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry Mounting: THT Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 0.6kV Load current: 8A x2 Max. load current: 16A Semiconductor structure: common cathode; double Case: TO3P Type of diode: rectifying Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSF40H100C C0G | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.65V Max. forward impulse current: 250A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMBJ11A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 34A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR2060CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube |
на замовлення 95 шт: термін постачання 14-30 дні (днів) |
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BZW04-40 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.4kW; 44.7V; 6.2A; unidirectional; DO41; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40.2V Breakdown voltage: 44.7V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZW04-40B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 44.7V; 6.2A; bidirectional; DO41; 0.4kW; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40.2V Breakdown voltage: 44.7V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BYG23M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 65ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.7V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BYG23MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 65ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.7V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BYG23M M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMA; 1.7V Type of diode: rectifying Case: SMA Max. forward voltage: 1.7V |
на замовлення 75000 шт: термін постачання 14-30 дні (днів) |
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SR110 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.85V |
на замовлення 509 шт: термін постачання 14-30 дні (днів) |
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| SMCJ36CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 64A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM100N06CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3 Mounting: THT Power dissipation: 107W Gate charge: 81nC Polarisation: unipolar Drain current: 80A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 6.7mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P6SMB200A R4 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P6SMB |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||
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MUR1640CT | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 100A Case: TO220AB Reverse recovery time: 50ns Max. load current: 16A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MUR1640CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO220AB Reverse recovery time: 50ns Application: automotive industry Max. load current: 16A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SFF2004GAH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SFF2004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SF2004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; TO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SF2004PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO3P Max. load current: 20A Reverse recovery time: 35ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TS25P07G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A Max. forward impulse current: 350A Max. forward voltage: 1.1V Version: flat Max. off-state voltage: 1kV Electrical mounting: THT Load current: 25A Case: TS-6P Type of bridge rectifier: single-phase |
на замовлення 60 шт: термін постачання 14-30 дні (днів) |
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TS50P06G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 50A; Ifsm: 400A Leads: flat pin Max. forward impulse current: 0.4kA Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Max. off-state voltage: 0.8kV Electrical mounting: THT Load current: 50A Kind of package: tube Case: TS-6P Type of bridge rectifier: single-phase |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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| MBRAD20100H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.85V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMBJ28A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.8A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||
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BZT52C20 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 20V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 850 шт: термін постачання 14-30 дні (днів) |
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1PGSMB5955 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape Tolerance: ±5% Mounting: SMD Power dissipation: 3W Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Zener voltage: 180V Type of diode: Zener |
на замовлення 57 шт: термін постачання 14-30 дні (днів) |
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GBU805 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 61 шт: термін постачання 14-30 дні (днів) |
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BAV19WS RRG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323F Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||
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SMBJ15CA R5G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 25.1A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Number of channels: 1 |
на замовлення 7650 шт: термін постачання 14-30 дні (днів) |
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SMCJ33A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSM260P02CX6 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; -20V; -6.5A; 1.56W; SOT26 Mounting: SMD Power dissipation: 1.56W Drain current: -6.5A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Case: SOT26 |
на замовлення 7000 шт: термін постачання 14-30 дні (днів) |
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| 1N5402G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||
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1PGSMB5929 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 15V; SMD; SMB; single diode; reel,tape Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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1SMA5929 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 15V; SMD; DO214AC,SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| 1.5SMC24A V7G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.8V; 47A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 47A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Manufacturer series: 1.5SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.8V; 47A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 47A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Manufacturer series: 1.5SMC
на замовлення 9350 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8500+ | 4.53 грн |
| TS2509CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.6÷23VDC; Uout: 0.8÷23VDC; 3A; SOP8
Input voltage: 3.6...23V DC
Output voltage: 0.8...23V DC
Output current: 3A
Case: SOP8
Mounting: SMD
Operating temperature: -20...125°C
Type of integrated circuit: PMIC
Integrated circuit features: PWM
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 0.5MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.6÷23VDC; Uout: 0.8÷23VDC; 3A; SOP8
Input voltage: 3.6...23V DC
Output voltage: 0.8...23V DC
Output current: 3A
Case: SOP8
Mounting: SMD
Operating temperature: -20...125°C
Type of integrated circuit: PMIC
Integrated circuit features: PWM
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 0.5MHz
Topology: buck
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В кошику
од. на суму грн.
| SMCJ5.0CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ5.0CAH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RSFBL |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 150ns; subSMA; Ufmax: 1.3V
Mounting: SMD
Case: subSMA
Max. forward voltage: 1.3V
Max. off-state voltage: 0.1kV
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 150ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 150ns; subSMA; Ufmax: 1.3V
Mounting: SMD
Case: subSMA
Max. forward voltage: 1.3V
Max. off-state voltage: 0.1kV
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 150ns
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| BZW04-20 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 22.8V; 12A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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| BZW04-20B |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8V; 12A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8V; 12A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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| S1M |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 12pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 12pF
на замовлення 3769 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.26 грн |
| 40+ | 10.65 грн |
| 100+ | 5.98 грн |
| 500+ | 3.96 грн |
| 1000+ | 3.35 грн |
| 2000+ | 2.84 грн |
| 1SMA4742 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SMAJ26CAH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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| TSCDH20065G1 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 76A
Leakage current: 0.2mA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 76A
Leakage current: 0.2mA
Kind of package: tube
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| BZT52B8V2S RRG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.03 грн |
| TSZU52C13 RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 13V; SMD; 0603; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 13V; SMD; 0603; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case - inch: 0603
Case - mm: 1608
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.00 грн |
| 22+ | 19.21 грн |
| 100+ | 11.05 грн |
| TS2581CS RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; SMD; 100kHz; Ch: 1
Mounting: SMD
Number of channels: 1
Case: SOP8
Type of integrated circuit: PMIC
Operating temperature: -20...125°C
Integrated circuit features: PWM
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Frequency: 0.1MHz
Topology: buck
Input voltage: 8...40V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷40VDC; SOP8; SMD; 100kHz; Ch: 1
Mounting: SMD
Number of channels: 1
Case: SOP8
Type of integrated circuit: PMIC
Operating temperature: -20...125°C
Integrated circuit features: PWM
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Frequency: 0.1MHz
Topology: buck
Input voltage: 8...40V DC
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| P4SMA6.8CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Max. forward impulse current: 40A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Max. forward impulse current: 40A
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| P4SMA6.8A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Max. forward impulse current: 40A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Max. forward impulse current: 40A
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| P4SMA68CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6V
Max. forward impulse current: 4.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6V
Max. forward impulse current: 4.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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| P4SMA68A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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| SSL14 M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Max. forward voltage: 0.39V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Max. forward voltage: 0.39V
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.19 грн |
| B0540W RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
на замовлення 196 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.68 грн |
| 35+ | 12.33 грн |
| 50+ | 9.38 грн |
| 100+ | 8.35 грн |
| SF16G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 30A
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| SF1608GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 16A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 16A
Reverse recovery time: 35ns
Application: automotive industry
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| SF1604GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
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| SF1604PTH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
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| SF1606GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 125A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 125A
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| SF1606PTH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
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| SF1608PTH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 16A
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
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| TSF40H100C C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.65V
Max. forward impulse current: 250A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220FP; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.65V
Max. forward impulse current: 250A
Kind of package: tube
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| SMBJ11A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Leakage current: 1µA
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| MBR2060CT |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.90 грн |
| 10+ | 47.05 грн |
| 50+ | 44.20 грн |
| BZW04-40 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 44.7V; 6.2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 44.7V; 6.2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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| BZW04-40B |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 44.7V; 6.2A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 44.7V; 6.2A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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| BYG23M |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| BYG23MH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 65ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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| BYG23M M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMA; 1.7V
Type of diode: rectifying
Case: SMA
Max. forward voltage: 1.7V
Category: SMD universal diodes
Description: Diode: rectifying; SMA; 1.7V
Type of diode: rectifying
Case: SMA
Max. forward voltage: 1.7V
на замовлення 75000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22500+ | 1.91 грн |
| SR110 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.85V
на замовлення 509 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.58 грн |
| 30+ | 14.26 грн |
| 100+ | 8.22 грн |
| 500+ | 5.79 грн |
| SMCJ36CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SMCJ15A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| TSM100N06CZ C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Mounting: THT
Power dissipation: 107W
Gate charge: 81nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 6.7mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Mounting: THT
Power dissipation: 107W
Gate charge: 81nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 6.7mΩ
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| P6SMB200A R4 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
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Мінімальне замовлення: 3 шт
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| MUR1640CT |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AB
Reverse recovery time: 50ns
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AB
Reverse recovery time: 50ns
Max. load current: 16A
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| MUR1640CTH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
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| SFF2004GAH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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| SFF2004GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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| SF2004GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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| SF2004PTH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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| TS25P07G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Max. forward impulse current: 350A
Max. forward voltage: 1.1V
Version: flat
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 25A
Case: TS-6P
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Max. forward impulse current: 350A
Max. forward voltage: 1.1V
Version: flat
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 25A
Case: TS-6P
Type of bridge rectifier: single-phase
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 148.12 грн |
| 5+ | 124.12 грн |
| 15+ | 114.89 грн |
| TS50P06G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 50A; Ifsm: 400A
Leads: flat pin
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 50A
Kind of package: tube
Case: TS-6P
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 50A; Ifsm: 400A
Leads: flat pin
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 50A
Kind of package: tube
Case: TS-6P
Type of bridge rectifier: single-phase
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.43 грн |
| 10+ | 140.05 грн |
| MBRAD20100H |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Application: automotive industry
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| SMBJ28A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| BZT52C20 RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 850 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 4.34 грн |
| 145+ | 2.94 грн |
| 250+ | 2.33 грн |
| 1PGSMB5955 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 180V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 180V
Type of diode: Zener
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.09 грн |
| 23+ | 18.28 грн |
| GBU805 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.41 грн |
| 10+ | 78.83 грн |
| 20+ | 68.77 грн |
| BAV19WS RRG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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Мінімальне замовлення: 10 шт
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| SMBJ15CA R5G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 7650 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3400+ | 11.20 грн |
| SMCJ33A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| TSM260P02CX6 RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -20V; -6.5A; 1.56W; SOT26
Mounting: SMD
Power dissipation: 1.56W
Drain current: -6.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Case: SOT26
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -20V; -6.5A; 1.56W; SOT26
Mounting: SMD
Power dissipation: 1.56W
Drain current: -6.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Case: SOT26
на замовлення 7000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.62 грн |
| 1N5402G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
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Мінімальне замовлення: 5 шт
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| 1PGSMB5929 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.00 грн |
| 22+ | 19.62 грн |
| 25+ | 19.54 грн |
| 1SMA5929 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; DO214AC,SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; DO214AC,SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Semiconductor structure: single diode
Kind of package: reel; tape
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