Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40689) > Сторінка 164 з 679

Обрати Сторінку:   [  << Попередня Сторінка ]  1 67 134 159 160 161 162 163 164 165 166 167 168 169 201 268 335 402 469 536 603 670 679  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
UGF15JTHE3/45 UGF15JTHE3/45 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UGF8JCT-E3/45 UGF8JCT-E3/45 Vishay General Semiconductor - Diodes Division UG%28F%2CB%298HCT%2CUG%28F%2CB%298JCT.pdf Description: DIODE ARRAY GP 600V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UGF8JT-E3/45 UGF8JT-E3/45 Vishay General Semiconductor - Diodes Division UG8xT%2C%20UGF8xT%2C%20UGB8xT.pdf Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UH10JT-E3/4W UH10JT-E3/4W Vishay General Semiconductor - Diodes Division UH%28F%2910JT.pdf Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UHF10JT-E3/45 UHF10JT-E3/45 Vishay General Semiconductor - Diodes Division UH%28F%2910JT.pdf Description: DIODE GEN PURP 600V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UHF20FCT-E3/4W UHF20FCT-E3/4W Vishay General Semiconductor - Diodes Division UHF20FCT.pdf Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
UHF5JT-E3/4W UHF5JT-E3/4W Vishay General Semiconductor - Diodes Division UH%28F%295JT.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
V20100C-E3/4W V20100C-E3/4W Vishay General Semiconductor - Diodes Division v20100c.pdf Description: DIODE ARR SCHOT 100V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 6498 шт:
термін постачання 21-31 дні (днів)
3+127.81 грн
50+45.82 грн
100+43.95 грн
500+38.81 грн
1000+38.76 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
V20150C-E3/4W V20150C-E3/4W Vishay General Semiconductor - Diodes Division v20150c.pdf Description: DIODE ARRAY SCHOTTKY 150V TO220
товару немає в наявності
В кошику  од. на суму  грн.
V20200C-E3/4W V20200C-E3/4W Vishay General Semiconductor - Diodes Division v20200c.pdf Description: DIODE ARR SCHOT 200V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 2791 шт:
термін постачання 21-31 дні (днів)
3+167.54 грн
50+95.74 грн
100+86.01 грн
500+65.19 грн
1000+59.57 грн
2000+55.25 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
V20200G-E3/4W V20200G-E3/4W Vishay General Semiconductor - Diodes Division v20200g.pdf Description: DIODE ARR SCHOT 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
V30100C-E3/4W V30100C-E3/4W Vishay General Semiconductor - Diodes Division v30100c.pdf Description: DIODE ARR SCHOT 100V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
2+193.45 грн
50+91.21 грн
100+81.92 грн
500+61.60 грн
1000+56.69 грн
2000+52.55 грн
5000+48.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
V30120C-E3/4W V30120C-E3/4W Vishay General Semiconductor - Diodes Division v30120c.pdf Description: DIODE ARR SCHOT 120V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
V30150C-E3/4W V30150C-E3/4W Vishay General Semiconductor - Diodes Division v30150c.pdf Description: DIODE ARR SCHOT 150V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
V30200C-E3/4W V30200C-E3/4W Vishay General Semiconductor - Diodes Division v30200c.pdf Description: DIODE ARR SCHOT 200V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 160 µA @ 200 V
на замовлення 4753 шт:
термін постачання 21-31 дні (днів)
2+218.49 грн
50+79.90 грн
100+78.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
V40100C-E3/4W V40100C-E3/4W Vishay General Semiconductor - Diodes Division v40100c.pdf Description: DIODE ARR SCHOT 100V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
2+259.94 грн
50+124.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
V40100G-E3/4W V40100G-E3/4W Vishay General Semiconductor - Diodes Division v40100g.pdf Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
V40100K-E3/4W V40100K-E3/4W Vishay General Semiconductor - Diodes Division V40100K-E3_4W.pdf Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
V60200PG-E3/45 V60200PG-E3/45 Vishay General Semiconductor - Diodes Division V60200PG.pdf Description: DIODE ARR SCHOT 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VB10150C-E3/4W VB10150C-E3/4W Vishay General Semiconductor - Diodes Division v10150c.pdf Description: DIODE ARR SCHOTT 150V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
на замовлення 8010 шт:
термін постачання 21-31 дні (днів)
3+147.68 грн
10+90.23 грн
100+60.59 грн
500+44.93 грн
1000+41.10 грн
2000+37.87 грн
5000+33.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VB10150S-E3/4W VB10150S-E3/4W Vishay General Semiconductor - Diodes Division v10150s.pdf Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
VB20100C-E3/4W VB20100C-E3/4W Vishay General Semiconductor - Diodes Division v20100c.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 6727 шт:
термін постачання 21-31 дні (днів)
4+99.31 грн
50+56.75 грн
100+56.56 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
VB20120C-E3/4W VB20120C-E3/4W Vishay General Semiconductor - Diodes Division v20120c.pdf Description: DIODE ARR SCHOT 120V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
VB20120S-E3/4W VB20120S-E3/4W Vishay General Semiconductor - Diodes Division v20120s.pdf Description: DIODE SCHOTTKY 120V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
VB20120SG-E3/4W VB20120SG-E3/4W Vishay General Semiconductor - Diodes Division v20120sg.pdf Description: DIODE SCHOTTKY 120V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
VB20150C-E3/4W VB20150C-E3/4W Vishay General Semiconductor - Diodes Division v20150c.pdf Description: DIODE ARRAY SCHOTTKY 150V TO263
на замовлення 687 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
VB20200C-E3/4W VB20200C-E3/4W Vishay General Semiconductor - Diodes Division v20200c.pdf Description: DIODE ARR SCHOT 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VB40150C-E3/4W VB40150C-E3/4W Vishay General Semiconductor - Diodes Division v40150c.pdf Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
на замовлення 15495 шт:
термін постачання 21-31 дні (днів)
3+164.08 грн
10+131.06 грн
100+104.35 грн
500+82.86 грн
1000+70.31 грн
2000+66.79 грн
5000+63.23 грн
10000+61.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VB60100C-E3/4W VB60100C-E3/4W Vishay General Semiconductor - Diodes Division V%28B%2960100C.pdf Description: DIODE ARR SCHOT 100V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 8030 шт:
термін постачання 21-31 дні (днів)
3+127.81 грн
50+77.94 грн
100+77.23 грн
500+72.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VF10150C-E3/4W VF10150C-E3/4W Vishay General Semiconductor - Diodes Division v10150c.pdf Description: DIODE ARR SCHOT 150V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
4+95.00 грн
10+74.85 грн
100+58.18 грн
500+46.28 грн
1000+37.70 грн
2000+35.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
VF20100C-E3/4W VF20100C-E3/4W Vishay General Semiconductor - Diodes Division v20100c.pdf Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 245 шт:
термін постачання 21-31 дні (днів)
3+161.49 грн
50+75.16 грн
100+67.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VF20100R-E3/4W VF20100R-E3/4W Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 100V ITO220
товару немає в наявності
В кошику  од. на суму  грн.
VF20100SG-E3/4W VF20100SG-E3/4W Vishay General Semiconductor - Diodes Division v20100sg.pdf Description: DIODE SCHOTTKY 100V 20A ITO220AB
товару немає в наявності
В кошику  од. на суму  грн.
VF20200C-E3/4W VF20200C-E3/4W Vishay General Semiconductor - Diodes Division v20200c.pdf Description: DIODE ARR SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
3+132.99 грн
50+103.25 грн
100+84.96 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VF20200G-E3/4W VF20200G-E3/4W Vishay General Semiconductor - Diodes Division v20200g.pdf Description: DIODE ARR SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
3+120.04 грн
10+95.47 грн
100+76.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VF30100C-E3/4W VF30100C-E3/4W Vishay General Semiconductor - Diodes Division v30100c.pdf Description: DIODE ARR SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
VF40100G-E3/4W VF40100G-E3/4W Vishay General Semiconductor - Diodes Division v40100g.pdf Description: DIODE ARRAY SCHOTTKY 100V ITO220
товару немає в наявності
В кошику  од. на суму  грн.
VI20200G-E3/4W VI20200G-E3/4W Vishay General Semiconductor - Diodes Division v20200g.pdf Description: DIODE ARRAY SCHOTTKY 200V TO262
товару немає в наявності
В кошику  од. на суму  грн.
VSIB10A20-E3/45 VSIB10A20-E3/45 Vishay General Semiconductor - Diodes Division VSIB10A20%20-%2080.pdf Description: BRIDGE RECT 1P 200V 10A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB10A40-E3/45 VSIB10A40-E3/45 Vishay General Semiconductor - Diodes Division VSIB10A20%20-%2080.pdf Description: BRIDGE RECT 1P 400V 10A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB10A60-E3/45 VSIB10A60-E3/45 Vishay General Semiconductor - Diodes Division VSIB10A20%20-%2080.pdf Description: BRIDGE RECT 1P 600V 10A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB10A80-E3/45 VSIB10A80-E3/45 Vishay General Semiconductor - Diodes Division VSIB10A20 - 80.pdf Description: BRIDGE RECT 1P 800V 10A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB1520-E3/45 VSIB1520-E3/45 Vishay General Semiconductor - Diodes Division VSIB1520-80.pdf Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB1540-E3/45 VSIB1540-E3/45 Vishay General Semiconductor - Diodes Division VSIB1520-80.pdf Description: BRIDGE RECT 1P 400V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB1560-E3/45 VSIB1560-E3/45 Vishay General Semiconductor - Diodes Division VSIB1520-80.pdf Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB1580-E3/45 VSIB1580-E3/45 Vishay General Semiconductor - Diodes Division VSIB1520-80.pdf Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB15A20-E3/45 VSIB15A20-E3/45 Vishay General Semiconductor - Diodes Division VSIB15A20-80.pdf Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB15A40-E3/45 VSIB15A40-E3/45 Vishay General Semiconductor - Diodes Division VSIB15A20-80.pdf Description: BRIDGE RECT 1P 400V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB15A60-E3/45 VSIB15A60-E3/45 Vishay General Semiconductor - Diodes Division VSIB15A20-80.pdf Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB15A80-E3/45 VSIB15A80-E3/45 Vishay General Semiconductor - Diodes Division VSIB15A20-80.pdf Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2020-E3/45 VSIB2020-E3/45 Vishay General Semiconductor - Diodes Division VSIB2020-80.pdf Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2040-E3/45 VSIB2040-E3/45 Vishay General Semiconductor - Diodes Division VSIB2020-80.pdf Description: BRIDGE RECT 1P 400V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2080-E3/45 VSIB2080-E3/45 Vishay General Semiconductor - Diodes Division VSIB2020-80.pdf Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2520-E3/45 VSIB2520-E3/45 Vishay General Semiconductor - Diodes Division VSIB2520-80.pdf Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2540-E3/45 VSIB2540-E3/45 Vishay General Semiconductor - Diodes Division VSIB2520-80.pdf Description: BRIDGE RECT 1P 400V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2580-E3/45 VSIB2580-E3/45 Vishay General Semiconductor - Diodes Division VSIB2520-80.pdf Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB4A60-E3/45 VSIB4A60-E3/45 Vishay General Semiconductor - Diodes Division VSIB4A20 - 80.pdf Description: BRIDGE RECT 1P 600V 2.3A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB620-E3/45 VSIB620-E3/45 Vishay General Semiconductor - Diodes Division VSIB620-80.pdf Description: BRIDGE RECT 1P 200V 2.8A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB640-E3/45 VSIB640-E3/45 Vishay General Semiconductor - Diodes Division VSIB620-80.pdf Description: BRIDGE RECT 1P 400V 2.8A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB660-E3/45 VSIB660-E3/45 Vishay General Semiconductor - Diodes Division VSIB620-80.pdf Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UGF15JTHE3/45
UGF15JTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UGF8JCT-E3/45 UG%28F%2CB%298HCT%2CUG%28F%2CB%298JCT.pdf
UGF8JCT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UGF8JT-E3/45 UG8xT%2C%20UGF8xT%2C%20UGB8xT.pdf
UGF8JT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UH10JT-E3/4W UH%28F%2910JT.pdf
UH10JT-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UHF10JT-E3/45 UH%28F%2910JT.pdf
UHF10JT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
товару немає в наявності
В кошику  од. на суму  грн.
UHF20FCT-E3/4W UHF20FCT.pdf
UHF20FCT-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
UHF5JT-E3/4W UH%28F%295JT.pdf
UHF5JT-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
V20100C-E3/4W v20100c.pdf
V20100C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 6498 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.81 грн
50+45.82 грн
100+43.95 грн
500+38.81 грн
1000+38.76 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
V20150C-E3/4W v20150c.pdf
V20150C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 150V TO220
товару немає в наявності
В кошику  од. на суму  грн.
V20200C-E3/4W v20200c.pdf
V20200C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 2791 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+167.54 грн
50+95.74 грн
100+86.01 грн
500+65.19 грн
1000+59.57 грн
2000+55.25 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
V20200G-E3/4W v20200g.pdf
V20200G-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
V30100C-E3/4W v30100c.pdf
V30100C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.45 грн
50+91.21 грн
100+81.92 грн
500+61.60 грн
1000+56.69 грн
2000+52.55 грн
5000+48.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
V30120C-E3/4W v30120c.pdf
V30120C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
V30150C-E3/4W v30150c.pdf
V30150C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
V30200C-E3/4W v30200c.pdf
V30200C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 160 µA @ 200 V
на замовлення 4753 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+218.49 грн
50+79.90 грн
100+78.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
V40100C-E3/4W v40100c.pdf
V40100C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+259.94 грн
50+124.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
V40100G-E3/4W v40100g.pdf
V40100G-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
V40100K-E3/4W V40100K-E3_4W.pdf
V40100K-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
V60200PG-E3/45 V60200PG.pdf
V60200PG-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VB10150C-E3/4W v10150c.pdf
VB10150C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
на замовлення 8010 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.68 грн
10+90.23 грн
100+60.59 грн
500+44.93 грн
1000+41.10 грн
2000+37.87 грн
5000+33.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VB10150S-E3/4W v10150s.pdf
VB10150S-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
VB20100C-E3/4W v20100c.pdf
VB20100C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 6727 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.31 грн
50+56.75 грн
100+56.56 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
VB20120C-E3/4W v20120c.pdf
VB20120C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
VB20120S-E3/4W v20120s.pdf
VB20120S-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
VB20120SG-E3/4W v20120sg.pdf
VB20120SG-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
VB20150C-E3/4W v20150c.pdf
VB20150C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 150V TO263
на замовлення 687 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
VB20200C-E3/4W v20200c.pdf
VB20200C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VB40150C-E3/4W v40150c.pdf
VB40150C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
на замовлення 15495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+164.08 грн
10+131.06 грн
100+104.35 грн
500+82.86 грн
1000+70.31 грн
2000+66.79 грн
5000+63.23 грн
10000+61.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VB60100C-E3/4W V%28B%2960100C.pdf
VB60100C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 8030 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.81 грн
50+77.94 грн
100+77.23 грн
500+72.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VF10150C-E3/4W v10150c.pdf
VF10150C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.00 грн
10+74.85 грн
100+58.18 грн
500+46.28 грн
1000+37.70 грн
2000+35.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
VF20100C-E3/4W v20100c.pdf
VF20100C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 245 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+161.49 грн
50+75.16 грн
100+67.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VF20100R-E3/4W
VF20100R-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V ITO220
товару немає в наявності
В кошику  од. на суму  грн.
VF20100SG-E3/4W v20100sg.pdf
VF20100SG-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 20A ITO220AB
товару немає в наявності
В кошику  од. на суму  грн.
VF20200C-E3/4W v20200c.pdf
VF20200C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.99 грн
50+103.25 грн
100+84.96 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VF20200G-E3/4W v20200g.pdf
VF20200G-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.04 грн
10+95.47 грн
100+76.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VF30100C-E3/4W v30100c.pdf
VF30100C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
VF40100G-E3/4W v40100g.pdf
VF40100G-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V ITO220
товару немає в наявності
В кошику  од. на суму  грн.
VI20200G-E3/4W v20200g.pdf
VI20200G-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 200V TO262
товару немає в наявності
В кошику  од. на суму  грн.
VSIB10A20-E3/45 VSIB10A20%20-%2080.pdf
VSIB10A20-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 10A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB10A40-E3/45 VSIB10A20%20-%2080.pdf
VSIB10A40-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 10A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB10A60-E3/45 VSIB10A20%20-%2080.pdf
VSIB10A60-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 10A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB10A80-E3/45 VSIB10A20 - 80.pdf
VSIB10A80-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 10A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB1520-E3/45 VSIB1520-80.pdf
VSIB1520-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB1540-E3/45 VSIB1520-80.pdf
VSIB1540-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB1560-E3/45 VSIB1520-80.pdf
VSIB1560-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB1580-E3/45 VSIB1520-80.pdf
VSIB1580-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB15A20-E3/45 VSIB15A20-80.pdf
VSIB15A20-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB15A40-E3/45 VSIB15A20-80.pdf
VSIB15A40-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB15A60-E3/45 VSIB15A20-80.pdf
VSIB15A60-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB15A80-E3/45 VSIB15A20-80.pdf
VSIB15A80-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2020-E3/45 VSIB2020-80.pdf
VSIB2020-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2040-E3/45 VSIB2020-80.pdf
VSIB2040-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2080-E3/45 VSIB2020-80.pdf
VSIB2080-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2520-E3/45 VSIB2520-80.pdf
VSIB2520-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2540-E3/45 VSIB2520-80.pdf
VSIB2540-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB2580-E3/45 VSIB2520-80.pdf
VSIB2580-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB4A60-E3/45 VSIB4A20 - 80.pdf
VSIB4A60-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 2.3A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB620-E3/45 VSIB620-80.pdf
VSIB620-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 2.8A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB640-E3/45 VSIB620-80.pdf
VSIB640-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 2.8A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
VSIB660-E3/45 VSIB620-80.pdf
VSIB660-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 2.8A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 67 134 159 160 161 162 163 164 165 166 167 168 169 201 268 335 402 469 536 603 670 679  [ Наступна Сторінка >> ]