Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (36402) > Сторінка 186 з 607
| Фото | Назва | Виробник | Інформація |
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VS-10TQ035SPBF | Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 35V 10A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 900pF @ 5V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 2 mA @ 35 V |
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VS-10WQ045FNPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A DPAK |
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SE20AFD-M3/6A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO221AC |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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SE20AFD-M3/6A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO221AC |
на замовлення 43313 шт: термін постачання 21-31 дні (днів) |
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VESD05A6-HAF-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12VC LLP75-7L Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: LLP75-7L Unidirectional Channels: 6 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 60W Power Line Protection: No |
на замовлення 27722 шт: термін постачання 21-31 дні (днів) |
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S1GHE3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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ESH2PD-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO220AA Packaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 6910 шт: термін постачання 21-31 дні (днів) |
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RMPG06J-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A MPG06 Packaging: Cut Tape (CT) Package / Case: MPG06, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 5455 шт: термін постачання 21-31 дні (днів) |
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VS-80SQ030TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 8A DO204AR |
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| VS-VSKDS403/100 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 100V 200A ADD-A-PAK |
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SMC3K75CA-M3/57 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 75VWM 121VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 24.8A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
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V15PN50-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 15A TO277A |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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V10PN50-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 10A TO277A |
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V10D45C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V 5A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
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V30D45C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 45V 15A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V |
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V30DL50C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 50V 15A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Current - Reverse Leakage @ Vr: 1.8 mA @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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V10D60C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V 5A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 700 µA @ 60 V |
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V30D60C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 60V 15A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V |
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V10D100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 100V 5A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
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V40D100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 20A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
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V60D100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 30A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 120 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V10D120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 120V 5A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
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V40D120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 120V 20A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
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V60D120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 120V 30A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A Current - Reverse Leakage @ Vr: 800 µA @ 120 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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V20DM120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 120V 10A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 120 V |
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V30DM120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 120V 15A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A Current - Reverse Leakage @ Vr: 800 µA @ 120 V |
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V40DM120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 120V 20A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
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SMC3K75CA-M3/57 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 75VWM 121VC DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 24.8A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
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V15PN50-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 15A TO277A |
на замовлення 21617 шт: термін постачання 21-31 дні (днів) |
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V10PN50-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 10A TO277A |
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V10D45C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V 5A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
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V30DL50C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 50V 15A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Current - Reverse Leakage @ Vr: 1.8 mA @ 50 V |
на замовлення 2337 шт: термін постачання 21-31 дні (днів) |
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V10D60C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V 5A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 700 µA @ 60 V |
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V30D60C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 60V 15A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V |
на замовлення 1079 шт: термін постачання 21-31 дні (днів) |
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V10D100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 100V 5A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
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V40D100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 20A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
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V60D100C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 30A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 120 V |
на замовлення 8803 шт: термін постачання 21-31 дні (днів) |
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V10D120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 120V 5A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
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V60D120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 120V 30A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A Current - Reverse Leakage @ Vr: 800 µA @ 120 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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V20DM120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 120V 10A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 120 V |
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V30DM120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 120V 15A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A Current - Reverse Leakage @ Vr: 800 µA @ 120 V |
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V40DM120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 120V 20A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
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G3SBA20-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
товар відсутній |
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G3SBA20-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
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G3SBA20L-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
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G3SBA20L-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
товар відсутній |
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G3SBA60-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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G3SBA60-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Packaging: Tray Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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G3SBA60L-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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G3SBA60L-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Packaging: Tray Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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G3SBA80-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU |
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G3SBA80-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU |
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G5SBA20-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU |
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G5SBA20-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU |
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G5SBA20L-M3/45 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1PHASE 200V 2.8A GBU |
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G5SBA60-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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G5SBA60-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU Packaging: Tray Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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G5SBA60L-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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G5SBA80-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU |
товар відсутній |
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G5SBA80-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU |
товар відсутній |
| VS-10TQ035SPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
товар відсутній
| VS-10WQ045FNPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A DPAK
Description: DIODE SCHOTTKY 45V 10A DPAK
товар відсутній
| SE20AFD-M3/6A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO221AC
Description: DIODE GEN PURP 200V 2A DO221AC
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)| SE20AFD-M3/6A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO221AC
Description: DIODE GEN PURP 200V 2A DO221AC
на замовлення 43313 шт:
термін постачання 21-31 дні (днів)| VESD05A6-HAF-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 60W
Power Line Protection: No
Description: TVS DIODE 5VWM 12VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 60W
Power Line Protection: No
на замовлення 27722 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 36.74 грн |
| 10+ | 30.24 грн |
| 100+ | 22.56 грн |
| 500+ | 16.63 грн |
| 1000+ | 12.85 грн |
| S1GHE3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
| ESH2PD-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6910 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.53 грн |
| 12+ | 24.42 грн |
| 100+ | 16.98 грн |
| 500+ | 12.44 грн |
| 1000+ | 10.11 грн |
| RMPG06J-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5455 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 26.65 грн |
| 14+ | 20.67 грн |
| 100+ | 14.08 грн |
| 500+ | 9.91 грн |
| 1000+ | 7.44 грн |
| 2000+ | 6.82 грн |
| VS-80SQ030TR |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 8A DO204AR
Description: DIODE SCHOTTKY 30V 8A DO204AR
товар відсутній
| VS-VSKDS403/100 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 100V 200A ADD-A-PAK
Description: DIODE MODULE 100V 200A ADD-A-PAK
товар відсутній
| SMC3K75CA-M3/57 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 75VWM 121VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
| V15PN50-M3/86A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 15A TO277A
Description: DIODE SCHOTTKY 50V 15A TO277A
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 32.25 грн |
| V10PN50-M3/86A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 10A TO277A
Description: DIODE SCHOTTKY 50V 10A TO277A
товар відсутній
| V10D45C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V 5A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE ARRAY SCHOTTKY 45V 5A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товар відсутній
| V30D45C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 45V 15A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Description: DIODE ARRAY SCHOTT 45V 15A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
товар відсутній
| V30DL50C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 50V 15A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.8 mA @ 50 V
Description: DIODE ARRAY SCHOTT 50V 15A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.8 mA @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 52.16 грн |
| V10D60C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V 5A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V 5A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
товар відсутній
| V30D60C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 60V 15A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 15A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
товар відсутній
| V10D100C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 5A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE ARRAY SCHOTT 100V 5A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товар відсутній
| V40D100C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 20A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE ARR SCHOTT 100V 20A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
| V60D100C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 120 V
Description: DIODE ARR SCHOTT 100V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 120 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 138.67 грн |
| V10D120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 120V 5A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE ARRAY SCHOTT 120V 5A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
товар відсутній
| V40D120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 20A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE ARR SCHOTT 120V 20A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
товар відсутній
| V60D120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Description: DIODE ARR SCHOTT 120V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 138.67 грн |
| V20DM120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 10A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Description: DIODE ARR SCHOTT 120V 10A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
товар відсутній
| V30DM120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 15A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Description: DIODE ARR SCHOTT 120V 15A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
товар відсутній
| V40DM120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 20A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE ARR SCHOTT 120V 20A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
товар відсутній
| SMC3K75CA-M3/57 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 75VWM 121VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
| V15PN50-M3/86A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 15A TO277A
Description: DIODE SCHOTTKY 50V 15A TO277A
на замовлення 21617 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.43 грн |
| 10+ | 58.89 грн |
| 100+ | 45.89 грн |
| 500+ | 35.57 грн |
| V10PN50-M3/86A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 10A TO277A
Description: DIODE SCHOTTKY 50V 10A TO277A
товар відсутній
| V10D45C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V 5A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE ARRAY SCHOTTKY 45V 5A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товар відсутній
| V30DL50C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 50V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.8 mA @ 50 V
Description: DIODE ARRAY SCHOTT 50V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.8 mA @ 50 V
на замовлення 2337 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.98 грн |
| 10+ | 92.47 грн |
| 100+ | 73.63 грн |
| 500+ | 58.47 грн |
| 1000+ | 49.61 грн |
| V10D60C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V 5A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V 5A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
товар відсутній
| V30D60C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 60V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
на замовлення 1079 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.56 грн |
| 10+ | 134.71 грн |
| 100+ | 107.24 грн |
| 500+ | 85.15 грн |
| 1000+ | 72.25 грн |
| V10D100C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 5A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE ARRAY SCHOTT 100V 5A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товар відсутній
| V40D100C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 20A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE ARR SCHOTT 100V 20A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
| V60D100C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 120 V
Description: DIODE ARR SCHOTT 100V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 120 V
на замовлення 8803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 284.54 грн |
| 10+ | 230.37 грн |
| 100+ | 186.32 грн |
| 500+ | 155.43 грн |
| 1000+ | 133.08 грн |
| V10D120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 120V 5A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE ARRAY SCHOTT 120V 5A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
товар відсутній
| V60D120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Description: DIODE ARR SCHOTT 120V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 284.54 грн |
| 10+ | 230.37 грн |
| 100+ | 186.32 грн |
| 500+ | 155.43 грн |
| 1000+ | 133.08 грн |
| V20DM120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 10A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Description: DIODE ARR SCHOTT 120V 10A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
товар відсутній
| V30DM120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Description: DIODE ARR SCHOTT 120V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
товар відсутній
| V40DM120C-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 20A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE ARR SCHOTT 120V 20A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
товар відсутній
| G3SBA20-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
товар відсутній
| G3SBA20-M3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
товар відсутній
| G3SBA20L-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
товар відсутній
| G3SBA20L-M3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
товар відсутній
| G3SBA60-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| G3SBA60-M3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| G3SBA60L-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| G3SBA60L-M3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| G3SBA80-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
товар відсутній
| G3SBA80-M3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
товар відсутній
| G5SBA20-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
товар відсутній
| G5SBA20-M3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
товар відсутній
| G5SBA20L-M3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
товар відсутній
| G5SBA60-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| G5SBA60-M3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| G5SBA60L-M3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| G5SBA80-M3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
товар відсутній
| G5SBA80-M3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
товар відсутній