Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41090) > Сторінка 182 з 685
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5254B-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 27V 500MW DO35Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
на замовлення 29088 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N5262B-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 51V 500MW DO204AHPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 51 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 39 V |
на замовлення 33412 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N5263B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 56V 500MW DO204AHPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 56 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 43 V |
на замовлення 29843 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N5418TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 20803 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N5624-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 14579 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N5625-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 8869 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N5626-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 4852 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N5627-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 3A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
на замовлення 1854 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAT42-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 200MA DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V |
на замовлення 24572 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAT46-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 150MA DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 10pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 34642 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAT85S-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 200MA DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BAT85S-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 200MA DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 3485 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAV21-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 200V 250MA DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 36423 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BY203-20STR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 2000V 250MA SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
на замовлення 37552 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BY228TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1500V 3A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V |
на замовлення 14632 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BY269TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 1600V 800MA SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Avalanche Current - Average Rectified (Io): 800mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Current - Reverse Leakage @ Vr: 2 µA @ 1600 V |
на замовлення 37825 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BY448TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1500V 2A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 1500 V |
на замовлення 35419 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYT56M-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 3A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 34523 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYT78-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 3A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 8877 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV26B-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 11908 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV26C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 |
на замовлення 4233 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV26E-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1A SOD 57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 2607 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV26E-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1A SOD 57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 32022 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV27-100-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 2A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
на замовлення 896 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV27-100-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 2A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
на замовлення 23603 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV27-200-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 279 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV27-200-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 22667 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV28-150-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 150V 3.5A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 3.5A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
на замовлення 15987 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV28-200-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3.5A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 3.5A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 903 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV28-600-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3.5A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Avalanche Current - Average Rectified (Io): 3.5A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 5597 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYV98-200-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 4A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 6065 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYW36-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 14697 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYW54-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 17595 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYW56-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 2A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 31051 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BZX55C12-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 500MW DO204AHPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 32366 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BZX55C3V3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 500MW DO204AHPackaging: Cut Tape (CT) Tolerance: ±6% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4582 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BZX85C15-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 1.3W DO204ALPackaging: Cut Tape (CT) Tolerance: ±6% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 11 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4365 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BZX85C27-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 27V 1.3W DO204ALPackaging: Cut Tape (CT) Tolerance: ±7% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 µA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8527 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SD101A-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 30MA DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V |
на замовлення 14562 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SD101C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 30MA DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 30 V |
на замовлення 4317 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SD103A-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 0V, 1MHz Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
на замовлення 38591 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SD103C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 0V, 1MHz Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 10 V |
на замовлення 66312 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SF1600-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1600V 1A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 1600 |
на замовлення 37937 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SF5408-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 3A SOD64Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 16159 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N4148WS-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 75V 150MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
на замовлення 43074 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N4148W-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 75V 150MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
на замовлення 10052 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N4148W-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 75V 150MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
на замовлення 73012 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N4150W-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 200MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 22735 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
AZ23C5V6-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER ARRAY 5.6V SOT-23-3Packaging: Cut Tape (CT) Tolerance: ±7% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 300 mW Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
на замовлення 20011 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAS16WS-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 75V 250MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 30642 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
BAS21-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 200MA SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 17283 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
BAS40-00-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 200MA SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
на замовлення 9593 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
BAS40-04-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 40V 200MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
на замовлення 18470 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
BAS40-05-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 40V 200MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
на замовлення 20563 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
BAS70-00-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 70V 200MA SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
на замовлення 62728 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
BAS70-04-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 70V 200MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BAS70-05-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 70V 200MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 116 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
BAS70-06-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 70V 200MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 2496 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAS85-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 200MA SOD80Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BAT42W-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 200MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V |
на замовлення 16814 шт: термін постачання 21-31 дні (днів) |
|
| 1N5254B-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: DIODE ZENER 27V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
на замовлення 29088 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.35 грн |
| 28+ | 10.80 грн |
| 100+ | 5.24 грн |
| 500+ | 4.10 грн |
| 1000+ | 2.85 грн |
| 2000+ | 2.47 грн |
| 5000+ | 2.26 грн |
| 1N5262B-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
Description: DIODE ZENER 51V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
на замовлення 33412 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.79 грн |
| 55+ | 5.47 грн |
| 111+ | 2.71 грн |
| 500+ | 2.45 грн |
| 1000+ | 2.35 грн |
| 2000+ | 2.25 грн |
| 5000+ | 1.88 грн |
| 1N5263B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Description: DIODE ZENER 56V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
на замовлення 29843 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 8.57 грн |
| 51+ | 5.92 грн |
| 117+ | 2.57 грн |
| 500+ | 2.29 грн |
| 1000+ | 2.17 грн |
| 1N5418TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 20803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.31 грн |
| 10+ | 47.10 грн |
| 100+ | 45.00 грн |
| 500+ | 34.83 грн |
| 1000+ | 30.86 грн |
| 1N5624-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 14579 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.52 грн |
| 10+ | 42.07 грн |
| 100+ | 34.63 грн |
| 500+ | 28.47 грн |
| 1000+ | 25.30 грн |
| 1N5625-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 8869 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.71 грн |
| 12+ | 26.40 грн |
| 1N5626-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 4852 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.93 грн |
| 10+ | 68.62 грн |
| 100+ | 45.75 грн |
| 500+ | 33.73 грн |
| 1000+ | 30.77 грн |
| 1N5627-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 1854 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.62 грн |
| 10+ | 38.77 грн |
| 100+ | 34.56 грн |
| 500+ | 31.79 грн |
| BAT42-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
на замовлення 24572 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.71 грн |
| 16+ | 19.72 грн |
| 100+ | 12.51 грн |
| 500+ | 8.78 грн |
| 1000+ | 7.83 грн |
| 2000+ | 7.03 грн |
| 5000+ | 6.05 грн |
| BAT46-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 150MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE SCHOTTK 100V 150MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 34642 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.82 грн |
| 15+ | 21.30 грн |
| 100+ | 13.51 грн |
| 500+ | 9.51 грн |
| 1000+ | 8.49 грн |
| 2000+ | 7.63 грн |
| 5000+ | 6.59 грн |
| BAT85S-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BAT85S-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.71 грн |
| 16+ | 19.72 грн |
| 100+ | 12.46 грн |
| 500+ | 8.75 грн |
| 1000+ | 7.80 грн |
| 2000+ | 7.00 грн |
| BAV21-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 250MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE STD 200V 250MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 36423 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.70 грн |
| 20+ | 15.07 грн |
| 100+ | 9.44 грн |
| 500+ | 6.57 грн |
| 1000+ | 5.83 грн |
| 2000+ | 5.21 грн |
| 5000+ | 4.46 грн |
| BY203-20STR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 2000V 250MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Description: DIODE AVAL 2000V 250MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
на замовлення 37552 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.73 грн |
| 10+ | 32.62 грн |
| 100+ | 25.79 грн |
| 500+ | 20.70 грн |
| 1000+ | 20.10 грн |
| BY228TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Description: DIODE AVALANCHE 1500V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
на замовлення 14632 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 272.58 грн |
| 10+ | 172.04 грн |
| 100+ | 120.52 грн |
| 500+ | 92.63 грн |
| BY269TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1600V 800MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Avalanche
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
Description: DIODE AVAL 1600V 800MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Avalanche
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
на замовлення 37825 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 38.94 грн |
| 12+ | 27.00 грн |
| 100+ | 22.79 грн |
| 500+ | 18.18 грн |
| BY448TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
Description: DIODE AVALANCHE 1500V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
на замовлення 35419 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.47 грн |
| 19+ | 16.35 грн |
| BYT56M-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 34523 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.72 грн |
| 10+ | 32.70 грн |
| BYT78-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 8877 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.99 грн |
| 10+ | 46.50 грн |
| 100+ | 44.55 грн |
| 500+ | 33.75 грн |
| 1000+ | 31.19 грн |
| BYV26B-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 11908 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 161.99 грн |
| 10+ | 99.97 грн |
| 100+ | 67.95 грн |
| 500+ | 50.93 грн |
| 1000+ | 46.80 грн |
| 2000+ | 45.60 грн |
| BYV26C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Description: DIODE AVALANCHE 600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
на замовлення 4233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 161.21 грн |
| 10+ | 99.44 грн |
| 100+ | 67.59 грн |
| 500+ | 50.65 грн |
| 1000+ | 46.54 грн |
| 2000+ | 45.30 грн |
| BYV26E-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2607 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 165.88 грн |
| 10+ | 102.74 грн |
| 100+ | 69.96 грн |
| 500+ | 52.50 грн |
| 1000+ | 48.27 грн |
| 2000+ | 47.31 грн |
| BYV26E-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 32022 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.66 грн |
| 10+ | 103.27 грн |
| 100+ | 70.35 грн |
| 500+ | 52.80 грн |
| 1000+ | 48.55 грн |
| 2000+ | 47.64 грн |
| BYV27-100-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 896 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 62.30 грн |
| BYV27-100-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 23603 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 62.30 грн |
| BYV27-200-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 279 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 187.69 грн |
| 10+ | 116.32 грн |
| 100+ | 79.76 грн |
| BYV27-200-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 22667 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 187.69 грн |
| 10+ | 116.84 грн |
| 100+ | 80.13 грн |
| 500+ | 60.47 грн |
| 1000+ | 56.06 грн |
| BYV28-150-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 15987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.35 грн |
| 10+ | 168.07 грн |
| 100+ | 118.10 грн |
| 500+ | 99.42 грн |
| BYV28-200-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 903 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.81 грн |
| BYV28-600-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE AVALANCHE 600V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5597 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.74 грн |
| 10+ | 87.22 грн |
| BYV98-200-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6065 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 107.47 грн |
| 500+ | 102.17 грн |
| BYW36-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 14697 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.17 грн |
| 10+ | 31.05 грн |
| 100+ | 26.72 грн |
| 500+ | 19.26 грн |
| 1000+ | 16.44 грн |
| BYW54-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 17595 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.28 грн |
| 11+ | 29.25 грн |
| 100+ | 25.35 грн |
| 500+ | 18.32 грн |
| 1000+ | 15.69 грн |
| 2000+ | 15.07 грн |
| BYW56-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 31051 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.92 грн |
| 15+ | 20.32 грн |
| 100+ | 20.07 грн |
| 500+ | 17.62 грн |
| 1000+ | 16.88 грн |
| 2000+ | 16.02 грн |
| BZX55C12-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 32366 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.71 грн |
| 16+ | 19.50 грн |
| 100+ | 12.32 грн |
| 500+ | 8.65 грн |
| 1000+ | 7.70 грн |
| 2000+ | 6.91 грн |
| 5000+ | 5.95 грн |
| BZX55C3V3-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4582 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.71 грн |
| 16+ | 19.27 грн |
| 100+ | 12.16 грн |
| 500+ | 8.54 грн |
| 1000+ | 7.61 грн |
| 2000+ | 6.82 грн |
| BZX85C15-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 15V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4365 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.62 грн |
| 10+ | 30.37 грн |
| 100+ | 19.55 грн |
| 500+ | 13.95 грн |
| 1000+ | 12.53 грн |
| 2000+ | 11.33 грн |
| BZX85C27-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 27V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8527 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.24 грн |
| 44+ | 6.82 грн |
| 100+ | 3.75 грн |
| 500+ | 3.40 грн |
| 1000+ | 3.28 грн |
| SD101A-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Description: DIODE SCHOTTKY 60V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
на замовлення 14562 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.90 грн |
| 48+ | 6.30 грн |
| 100+ | 6.24 грн |
| 500+ | 4.28 грн |
| 1000+ | 3.58 грн |
| 2000+ | 3.50 грн |
| 5000+ | 3.25 грн |
| SD101C-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Description: DIODE SCHOTTKY 40V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 4317 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.01 грн |
| 91+ | 3.30 грн |
| SD103A-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE SCHOTTKY 40V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 38591 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.82 грн |
| 15+ | 21.37 грн |
| 100+ | 13.56 грн |
| 500+ | 9.55 грн |
| 1000+ | 8.52 грн |
| 2000+ | 7.66 грн |
| 5000+ | 6.61 грн |
| SD103C-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Description: DIODE SCHOTTKY 20V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
на замовлення 66312 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.82 грн |
| 15+ | 21.37 грн |
| 100+ | 13.56 грн |
| 500+ | 9.55 грн |
| 1000+ | 8.52 грн |
| 2000+ | 7.66 грн |
| 5000+ | 6.61 грн |
| SF1600-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1600
Description: DIODE AVALANCHE 1600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1600
на замовлення 37937 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 38.94 грн |
| 11+ | 29.85 грн |
| 100+ | 24.82 грн |
| 500+ | 20.44 грн |
| 1000+ | 17.80 грн |
| 2000+ | 16.88 грн |
| SF5408-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 16159 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.53 грн |
| 10+ | 50.47 грн |
| 100+ | 48.54 грн |
| 500+ | 36.00 грн |
| 1000+ | 32.92 грн |
| 1N4148WS-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 43074 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.14 грн |
| 21+ | 14.40 грн |
| 100+ | 9.03 грн |
| 500+ | 6.28 грн |
| 1000+ | 5.57 грн |
| 1N4148W-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 10052 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.70 грн |
| 20+ | 15.07 грн |
| 100+ | 9.49 грн |
| 500+ | 6.61 грн |
| 1000+ | 5.87 грн |
| 1N4148W-E3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 73012 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.70 грн |
| 20+ | 15.07 грн |
| 100+ | 9.49 грн |
| 500+ | 6.61 грн |
| 1000+ | 5.87 грн |
| 2000+ | 5.24 грн |
| 5000+ | 4.48 грн |
| 1N4150W-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE STANDARD 50V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 22735 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.12 грн |
| 51+ | 5.92 грн |
| 100+ | 5.36 грн |
| 500+ | 3.68 грн |
| 1000+ | 3.24 грн |
| AZ23C5V6-E3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 5.6V SOT-23-3
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: DIODE ZENER ARRAY 5.6V SOT-23-3
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
на замовлення 20011 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.01 грн |
| 52+ | 5.77 грн |
| BAS16WS-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 30642 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.01 грн |
| 103+ | 2.92 грн |
| BAS21-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 17283 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.14 грн |
| 22+ | 14.10 грн |
| 100+ | 8.84 грн |
| 500+ | 6.14 грн |
| 1000+ | 5.45 грн |
| BAS40-00-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE SCHOTTKY 40V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
на замовлення 9593 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.92 грн |
| 21+ | 14.77 грн |
| 100+ | 9.29 грн |
| 500+ | 6.47 грн |
| 1000+ | 5.74 грн |
| BAS40-04-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
на замовлення 18470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.82 грн |
| 18+ | 17.25 грн |
| 100+ | 10.90 грн |
| 500+ | 7.62 грн |
| 1000+ | 6.78 грн |
| BAS40-05-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
на замовлення 20563 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.82 грн |
| 18+ | 17.25 грн |
| 100+ | 10.90 грн |
| 500+ | 7.62 грн |
| 1000+ | 6.78 грн |
| BAS70-00-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 70V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE SCHOTTKY 70V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
на замовлення 62728 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.92 грн |
| 21+ | 14.77 грн |
| 100+ | 9.29 грн |
| 500+ | 6.47 грн |
| 1000+ | 5.74 грн |
| BAS70-04-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| BAS70-05-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 116 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.59 грн |
| 18+ | 17.47 грн |
| 100+ | 11.04 грн |
| BAS70-06-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 2496 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.82 грн |
| 18+ | 17.25 грн |
| 100+ | 10.90 грн |
| 500+ | 7.62 грн |
| 1000+ | 6.78 грн |
| BAS85-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BAT42W-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
на замовлення 16814 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.15 грн |
| 17+ | 18.45 грн |
| 100+ | 11.62 грн |
| 500+ | 8.14 грн |
| 1000+ | 7.25 грн |









