Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40405) > Сторінка 337 з 674
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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ZMY12-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 9 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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ZMY15-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 1W DO213ABTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-213AB Grade: Automotive Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 11 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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ZMY18-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 14 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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ZMY22-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 17 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ZMY24-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 18 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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ZMY27-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 27V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ZMY30-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-213AB Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 22.5 V Qualification: AEC-Q101 |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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ZMY33-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 33V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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ZMY62-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 62V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 47 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ZMY68-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 68V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 51 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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ZMY6V2-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: DO-213AB Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 2 V Qualification: AEC-Q101 |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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ZMY6V8-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: DO-213AB Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 3 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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ZMY75-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 75V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 160 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 56 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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ZMY8V2-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: DO-213AB Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 6 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| VS-100MT060WDF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 121A 462W MTPPackaging: Tray Package / Case: 16-MTP Module Mounting Type: Chassis Mount Input: Standard Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.29V @ 15V, 60A NTC Thermistor: Yes Supplier Device Package: MTP Current - Collector (Ic) (Max): 121 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 462 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-100MT160PBPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 100A 7-MTPBPackaging: Tray Package / Case: 7-MTPB Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 7-MTPB Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 100 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
на замовлення 216 шт: термін постачання 21-31 дні (днів) |
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VS-100MT160P-P | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 100A 12MTPPackaging: Tray Package / Case: 12-MTP Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 12-MTP Pressfit Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 100 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-110MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 110A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 110 A |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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| VS-110MT80KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 800V 110A MT-K |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-111MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 110A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 110 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-112MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 110A MT-K |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-112MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 110A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 110 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-130MT100KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1KV 130A MT-K |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-130MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 130A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 130 A |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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VS-36MT5 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 3PHASE 600V 35A D-63 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| VS-401CNQ040PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD SCHOTT 40V 40A TO244ABPackaging: Tray Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-244AB Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A Current - Reverse Leakage @ Vr: 4 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-40MT120UHAPBF | Vishay General Semiconductor - Diodes Division | Description: IGBT MODULE 1200V 80A 463W MTP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-40MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 40A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-40MT160PAPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 40A 7MTPAPackaging: Tray Package / Case: 7-MTPA Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 7-MTPA Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-40MT160P-P | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 45A 12MTPPackaging: Tube Package / Case: 12-MTP Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 12-MTP Pressfit Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 45 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-50MT060WHTAPBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 114A 658W MTP Packaging: Tray Package / Case: 12-MTP Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: MTP Part Status: Obsolete Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 658 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| VS-51MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 55A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 55 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-52MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 55A MT-K |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-52MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 55A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 55 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-53MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 55A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 55 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-70MT060WHTAPBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 100A 347W MTPPackaging: Tray Package / Case: 12-MTP Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A NTC Thermistor: No Supplier Device Package: MTP IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 347 W Current - Collector Cutoff (Max): 700 µA Input Capacitance (Cies) @ Vce: 8 nF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-70MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 70A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 70 A |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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| VS-70MT140KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.4KV 70A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.4 kV Current - Average Rectified (Io): 70 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-70MT160PAPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTKPackaging: Tray Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 75 A |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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VS-70MT160PBPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTKPackaging: Tube Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 75 A |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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| VS-70MT80KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 800V 70A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 70 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-90MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 90A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 90 A |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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VS-90MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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| VS-91MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-92MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 90A MT-K |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-92MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-93MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
VS-HFA140FA60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 70A 600V SOT-227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| VS-HFA140NJ60CPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 167A TO244ABPackaging: Tray Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 167A Supplier Device Package: TO-244AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A Current - Reverse Leakage @ Vr: 4 mA @ 480 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-HFA200FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 100A 1200V SOT-227Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
VS-HFA280NJ60CPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 280A TO244ABPackaging: Tray Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 39 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 280A Supplier Device Package: TO-244AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A Current - Reverse Leakage @ Vr: 8 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
VS-HFA60EA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 30A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-HFA60FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 30A SOT227Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 123 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-HFA70FA120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 70A SOT227Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 51 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 70A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
VS-HFA80FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 40A 1200V SOT-227Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 40A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
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VS-100BGQ015HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A Current - Reverse Leakage @ Vr: 18 mA @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
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VS-100BGQ030HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
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VS-100BGQ045HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2700pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
VS-10CTQ150-1PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 150V 5A TO2623Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-262-3 Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
VS-10CWH02FN-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 10A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 200 V |
на замовлення 10624 шт: термін постачання 21-31 дні (днів) |
|
| ZMY12-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 12V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 10.77 грн |
| 3000+ | 9.38 грн |
| 4500+ | 8.87 грн |
| 7500+ | 7.79 грн |
| ZMY15-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: AEC-Q101
Description: DIODE ZENER 15V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 9.91 грн |
| 3000+ | 8.63 грн |
| 4500+ | 8.16 грн |
| 7500+ | 7.16 грн |
| ZMY18-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 18V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 6.65 грн |
| ZMY22-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 17 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 22V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 17 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ZMY24-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 18 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 24V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 18 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 10.85 грн |
| 3000+ | 9.45 грн |
| 4500+ | 8.94 грн |
| 7500+ | 7.85 грн |
| ZMY27-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 27V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 8.34 грн |
| 3000+ | 7.24 грн |
| ZMY30-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 22.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 30V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 22.5 V
Qualification: AEC-Q101
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 10.83 грн |
| 3000+ | 9.43 грн |
| 4500+ | 8.92 грн |
| 7500+ | 7.83 грн |
| 10500+ | 7.51 грн |
| ZMY33-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 33V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 10.83 грн |
| 3000+ | 9.43 грн |
| 4500+ | 8.92 грн |
| ZMY62-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 47 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 62V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 47 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 9.77 грн |
| 3000+ | 8.51 грн |
| ZMY68-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 51 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 68V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 51 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 9.74 грн |
| 3000+ | 8.48 грн |
| 4500+ | 8.02 грн |
| ZMY6V2-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 2 V
Qualification: AEC-Q101
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 9.16 грн |
| 3000+ | 8.12 грн |
| 7500+ | 7.79 грн |
| 10500+ | 6.58 грн |
| ZMY6V8-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 3 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 10.77 грн |
| 3000+ | 9.37 грн |
| 4500+ | 8.87 грн |
| 7500+ | 7.79 грн |
| ZMY75-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 75V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 9.95 грн |
| 3000+ | 8.66 грн |
| 4500+ | 8.19 грн |
| 7500+ | 7.19 грн |
| ZMY8V2-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
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од. на суму грн.
| VS-100MT060WDF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 121A 462W MTP
Packaging: Tray
Package / Case: 16-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.29V @ 15V, 60A
NTC Thermistor: Yes
Supplier Device Package: MTP
Current - Collector (Ic) (Max): 121 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
Description: IGBT MODULE 600V 121A 462W MTP
Packaging: Tray
Package / Case: 16-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.29V @ 15V, 60A
NTC Thermistor: Yes
Supplier Device Package: MTP
Current - Collector (Ic) (Max): 121 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-100MT160PBPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 100A 7-MTPB
Packaging: Tray
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPB
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 100A 7-MTPB
Packaging: Tray
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPB
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
на замовлення 216 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2582.89 грн |
| 15+ | 1767.87 грн |
| 105+ | 1650.04 грн |
| VS-100MT160P-P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 100A 12MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 100A 12MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-110MT120KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 110 A
Description: BRIDGE RECT 3P 1.2KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 110 A
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5995.44 грн |
| 15+ | 5231.90 грн |
| VS-110MT80KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 800V 110A MT-K
Description: BRIDGE RECT 3P 800V 110A MT-K
товару немає в наявності
В кошику
од. на суму грн.
| VS-111MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 110 A
Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 110 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-112MT120KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 110A MT-K
Description: BRIDGE RECT 3P 1.2KV 110A MT-K
товару немає в наявності
В кошику
од. на суму грн.
| VS-112MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 110 A
Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 110 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-130MT100KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1KV 130A MT-K
Description: BRIDGE RECT 3PHASE 1KV 130A MT-K
товару немає в наявності
В кошику
од. на суму грн.
| VS-130MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 130A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 130 A
Description: BRIDGE RECT 3P 1.6KV 130A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 130 A
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5768.43 грн |
| 15+ | 4415.36 грн |
| VS-36MT5 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 600V 35A D-63
Description: BRIDGE RECT 3PHASE 600V 35A D-63
товару немає в наявності
В кошику
од. на суму грн.
| VS-401CNQ040PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOTT 40V 40A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A
Current - Reverse Leakage @ Vr: 4 mA @ 40 V
Description: DIODE MOD SCHOTT 40V 40A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A
Current - Reverse Leakage @ Vr: 4 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-40MT120UHAPBF |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 80A 463W MTP
Description: IGBT MODULE 1200V 80A 463W MTP
товару немає в наявності
В кошику
од. на суму грн.
| VS-40MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 40A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 40A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-40MT160PAPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 40A 7MTPA
Packaging: Tray
Package / Case: 7-MTPA
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPA
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 40A 7MTPA
Packaging: Tray
Package / Case: 7-MTPA
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPA
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-40MT160P-P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 45A 12MTP
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 45A 12MTP
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-50MT060WHTAPBF |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 114A 658W MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: MTP
Part Status: Obsolete
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 658 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
Description: IGBT MODULE 600V 114A 658W MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: MTP
Part Status: Obsolete
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 658 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-51MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-52MT120KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 55A MT-K
Description: BRIDGE RECT 3P 1.2KV 55A MT-K
товару немає в наявності
В кошику
од. на суму грн.
| VS-52MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-53MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-70MT060WHTAPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 100A 347W MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: MTP
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 347 W
Current - Collector Cutoff (Max): 700 µA
Input Capacitance (Cies) @ Vce: 8 nF @ 30 V
Description: IGBT MODULE 600V 100A 347W MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: MTP
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 347 W
Current - Collector Cutoff (Max): 700 µA
Input Capacitance (Cies) @ Vce: 8 nF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-70MT120KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3P 1.2KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5503.85 грн |
| VS-70MT140KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.4KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3P 1.4KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 70 A
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од. на суму грн.
| VS-70MT160PAPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tray
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tray
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2838.48 грн |
| VS-70MT160PBPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tube
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tube
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2809.90 грн |
| 15+ | 1933.74 грн |
| VS-70MT80KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 800V 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3PHASE 800V 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 70 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-90MT120KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5338.08 грн |
| VS-90MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4797.49 грн |
| VS-91MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
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В кошику
од. на суму грн.
| VS-92MT120KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
товару немає в наявності
В кошику
од. на суму грн.
| VS-92MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-93MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-HFA140FA60 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 70A 600V SOT-227
Description: DIODE HEXFRED 70A 600V SOT-227
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В кошику
од. на суму грн.
| VS-HFA140NJ60CPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 167A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 167A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A
Current - Reverse Leakage @ Vr: 4 mA @ 480 V
Description: DIODE MOD GP 600V 167A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 167A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A
Current - Reverse Leakage @ Vr: 4 mA @ 480 V
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В кошику
од. на суму грн.
| VS-HFA200FA120P |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 100A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE HEXFRED 100A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
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В кошику
од. на суму грн.
| VS-HFA280NJ60CPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 280A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 280A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Description: DIODE MOD GP 600V 280A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 280A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-HFA60EA120P |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
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В кошику
од. на суму грн.
| VS-HFA60FA120P |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 123 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 123 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-HFA70FA120 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 70A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 51 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE MODULE GP 1200V 70A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 51 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-HFA80FA120P |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 40A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Description: DIODE HEXFRED 40A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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В кошику
од. на суму грн.
| VS-100BGQ015HF4 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Qualification: AEC-Q101
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В кошику
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| VS-100BGQ030HF4 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| VS-100BGQ045HF4 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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В кошику
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| VS-10CTQ150-1PBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 150V 5A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-10CWH02FN-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
на замовлення 10624 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.01 грн |
| 75+ | 37.65 грн |
| 150+ | 33.65 грн |
| 525+ | 26.23 грн |
| 1050+ | 23.91 грн |
| 2025+ | 22.09 грн |












