Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41228) > Сторінка 341 з 688
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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VS-40MT160P-P | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 45A 12MTPPackaging: Tube Package / Case: 12-MTP Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 12-MTP Pressfit Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 45 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
товару немає в наявності |
Мінімальне замовлення: 105 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-50MT060WHTAPBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 114A 658W MTP Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V Current - Collector Cutoff (Max): 400 µA Power - Max: 658 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 114 A Part Status: Obsolete Supplier Device Package: MTP NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A Operating Temperature: -40°C ~ 150°C (TJ) Input: Standard Mounting Type: Chassis Mount Package / Case: 12-MTP Module Packaging: Tray Configuration: Half Bridge |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| VS-51MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 55A MT-KCurrent - Average Rectified (Io): 55 A Voltage - Peak Reverse (Max): 1.6 kV Part Status: Active Supplier Device Package: MT-K Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: MT-K Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
| VS-52MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 55A MT-K |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
| VS-52MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 55A MT-KCurrent - Average Rectified (Io): 55 A Voltage - Peak Reverse (Max): 1.6 kV Supplier Device Package: MT-K Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: MT-K Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
| VS-53MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 55A MT-KCurrent - Average Rectified (Io): 55 A Voltage - Peak Reverse (Max): 1.6 kV Supplier Device Package: MT-K Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: MT-K Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
| VS-70MT060WHTAPBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 100A 347W MTPInput Capacitance (Cies) @ Vce: 8 nF @ 30 V Current - Collector Cutoff (Max): 700 µA Power - Max: 347 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Part Status: Obsolete IGBT Type: NPT Supplier Device Package: MTP NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: 12-MTP Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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VS-70MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 70A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 70 A |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| VS-70MT140KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.4KV 70A MT-KCurrent - Average Rectified (Io): 70 A Voltage - Peak Reverse (Max): 1.4 kV Part Status: Active Supplier Device Package: MT-K Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: MT-K Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
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VS-70MT160PAPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTKPackaging: Tray Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 75 A |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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VS-70MT160PBPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTKPackaging: Tube Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 75 A |
на замовлення 62 шт: термін постачання 21-31 дні (днів) |
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| VS-70MT80KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 800V 70A MT-KCurrent - Average Rectified (Io): 70 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: MT-K Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: MT-K Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
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VS-90MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 90A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 90 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-90MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-KPackaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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| VS-91MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-KCurrent - Average Rectified (Io): 90 A Voltage - Peak Reverse (Max): 1.6 kV Supplier Device Package: MT-K Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: MT-K Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
| VS-92MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 90A MT-K |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
| VS-92MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-KCurrent - Average Rectified (Io): 90 A Voltage - Peak Reverse (Max): 1.6 kV Supplier Device Package: MT-K Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: MT-K Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
| VS-93MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-KCurrent - Average Rectified (Io): 90 A Voltage - Peak Reverse (Max): 1.6 kV Supplier Device Package: MT-K Technology: Standard Operating Temperature: -40°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Chassis Mount Package / Case: MT-K Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
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VS-HFA140FA60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 70A 600V SOT-227 |
товару немає в наявності |
Мінімальне замовлення: 160 шт В кошику од. на суму грн. | ||||||||||||||||
| VS-HFA140NJ60CPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 167A TO244ABCurrent - Reverse Leakage @ Vr: 4 mA @ 480 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244AB Current - Average Rectified (Io) (per Diode): 167A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 33 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: TO-244AB Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||||
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VS-HFA200FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 100A 1200V SOT-227Current - Reverse Leakage @ Vr: 75 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 100A (DC) Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-HFA280NJ60CPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 280A TO244ABCurrent - Reverse Leakage @ Vr: 8 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-244AB Current - Average Rectified (Io) (per Diode): 280A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 39 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: TO-244AB Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-HFA60EA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 30A SOT227 Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 30A (DC) Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 145 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tray Current - Reverse Leakage @ Vr: 75 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-HFA60FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 30A SOT227Current - Reverse Leakage @ Vr: 75 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 30A (DC) Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 123 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-HFA70FA120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 70A SOT227Package / Case: SOT-227-4, miniBLOC Packaging: Tray Current - Reverse Leakage @ Vr: 75 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 70A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 51 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount |
товару немає в наявності |
Мінімальне замовлення: 160 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-HFA80FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 40A 1200V SOT-227Current - Reverse Leakage @ Vr: 2 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 40A (DC) Diode Configuration: 2 Independent Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| VS-100BGQ015HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A Current - Reverse Leakage @ Vr: 18 mA @ 15 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 375 шт В кошику од. на суму грн. | |||||||||||||||||
| VS-100BGQ030HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 375 шт В кошику од. на суму грн. | |||||||||||||||||
| VS-100BGQ045HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2700pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 375 шт В кошику од. на суму грн. | |||||||||||||||||
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VS-10CTQ150-1PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 150V 5A TO2623Current - Reverse Leakage @ Vr: 50 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-262-3 Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-10CWH02FN-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 10A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 200 V |
на замовлення 10148 шт: термін постачання 21-31 дні (днів) |
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VS-10ETF02FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 10A TO220-2FPCurrent - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-10ETF02-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO220ACOperating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-10ETF02SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO263ABCurrent - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D²PAK) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-10ETF04FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 400V 10A TO220-2FPCurrent - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Package / Case: TO-220-2 Full Pack Packaging: Tube Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-10ETF06FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 10A TO2202Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-10ETF06-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 10A TO220ACCurrent - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-10ETF10-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 10A TO220ACCurrent - Reverse Leakage @ Vr: 100 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 310 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 4509 шт: термін постачання 21-31 дні (днів) |
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VS-10ETF10SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 10A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-10ETF12FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 10A TO220-2FPCurrent - Reverse Leakage @ Vr: 100 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 310 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
на замовлення 1069 шт: термін постачання 21-31 дні (днів) |
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VS-10ETF12SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-10ETS08SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 10A TO263ABCurrent - Reverse Leakage @ Vr: 50 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-10RIA100M | Vishay General Semiconductor - Diodes Division |
Description: SCR 1KV 10A TO208AAPackage / Case: TO-208AA, TO-48-3, Stud Packaging: Tube SCR Type: Standard Recovery Mounting Type: Chassis, Stud Mount Voltage - Off State: 1 kV Current - On State (It (RMS)) (Max): 10 A Supplier Device Package: TO-208AA (TO-48) Current - Off State (Max): 10 mA Voltage - On State (Vtm) (Max): 1.75 V Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 25 A Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A Current - Gate Trigger (Igt) (Max): 60 mA Current - Hold (Ih) (Max): 130 mA Operating Temperature: -65°C ~ 125°C |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-10RIA120M | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 10A TO-208AA (TO-48)Voltage - Off State: 1.2 kV Current - On State (It (RMS)) (Max): 10 A Supplier Device Package: TO-208AA (TO-48) Current - Off State (Max): 10 mA Voltage - On State (Vtm) (Max): 1.75 V Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 25 A Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A Current - Gate Trigger (Igt) (Max): 60 mA Current - Hold (Ih) (Max): 130 mA Operating Temperature: -65°C ~ 125°C SCR Type: Standard Recovery Mounting Type: Chassis, Stud Mount Package / Case: TO-208AA, TO-48-3, Stud Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-10RIA40M | Vishay General Semiconductor - Diodes Division |
Description: SCR 400V 10A TO-208AA (TO-48)Packaging: Tube Package / Case: TO-208AA, TO-48-3, Stud Mounting Type: Chassis, Stud Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 130 mA Current - Gate Trigger (Igt) (Max): 60 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A Current - On State (It (AV)) (Max): 25 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.75 V Current - Off State (Max): 10 mA Supplier Device Package: TO-208AA (TO-48) Part Status: Active Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 400 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-10RIA80M | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 10A TO208AASupplier Device Package: TO-208AA (TO-48) Current - Off State (Max): 10 mA Voltage - On State (Vtm) (Max): 1.75 V Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 25 A Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A Current - Gate Trigger (Igt) (Max): 60 mA Current - Hold (Ih) (Max): 130 mA Operating Temperature: -65°C ~ 125°C SCR Type: Standard Recovery Mounting Type: Chassis, Stud Mount Package / Case: TO-208AA, TO-48-3, Stud Packaging: Tube Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 10 A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-10TQ035-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 900pF @ 5V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 2 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-10TQ045-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A TO220ACCurrent - Reverse Leakage @ Vr: 2 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Obsolete Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-10WQ045FNHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A TO252AAPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-112CNQ030ASLPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 30V D618SL |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-112CNQ030ASMPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 30V D618SM |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-12CWQ04FNHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAKTechnology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 3 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-252AA (DPAK) Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-12CWQ06FN-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V 6A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 6 A Current - Reverse Leakage @ Vr: 3 mA @ 60 V |
на замовлення 2895 шт: термін постачання 21-31 дні (днів) |
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VS-12CWQ10FN-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 100V 6A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
на замовлення 8037 шт: термін постачання 21-31 дні (днів) |
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VS-12EWH06FN-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 12A TO252AAPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1974 шт: термін постачання 21-31 дні (днів) |
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VS-12TQ040SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 15A TO263ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 900pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-12TTS08-M3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 12.5A TO220ABVoltage - Off State: 800 V Current - On State (It (RMS)) (Max): 12.5 A Part Status: Active Supplier Device Package: TO-220-3 Current - Off State (Max): 50 µA Voltage - On State (Vtm) (Max): 1.2 V Voltage - Gate Trigger (Vgt) (Max): 1 V Current - On State (It (AV)) (Max): 8 A Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz Current - Gate Trigger (Igt) (Max): 15 mA Current - Hold (Ih) (Max): 30 mA Operating Temperature: -40°C ~ 125°C SCR Type: Standard Recovery Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 676 шт: термін постачання 21-31 дні (днів) |
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VS-12TTS08SPBF | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 12.5A TO263ABVoltage - Off State: 800 V Current - On State (It (RMS)) (Max): 12.5 A Part Status: Discontinued at Digi-Key Supplier Device Package: TO-263AB (D²PAK) Current - Off State (Max): 50 µA Voltage - On State (Vtm) (Max): 1.2 V Voltage - Gate Trigger (Vgt) (Max): 1 V Current - On State (It (AV)) (Max): 8 A Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz Current - Gate Trigger (Igt) (Max): 15 mA Current - Hold (Ih) (Max): 30 mA Operating Temperature: -40°C ~ 125°C SCR Type: Standard Recovery Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| VS-150EBU04HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 400V 150A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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VS-150U100DL | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1000V 150A DO-8 |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. |
| VS-40MT160P-P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 45A 12MTP
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 45A 12MTP
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
товару немає в наявності
Мінімальне замовлення: 105 шт
В кошику
од. на суму грн.
| VS-50MT060WHTAPBF |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 114A 658W MTP
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 658 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 114 A
Part Status: Obsolete
Supplier Device Package: MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
Configuration: Half Bridge
Description: IGBT MODULE 600V 114A 658W MTP
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 658 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 114 A
Part Status: Obsolete
Supplier Device Package: MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
Configuration: Half Bridge
товару немає в наявності
В кошику
од. на суму грн.
| VS-51MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| VS-52MT120KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 55A MT-K
Description: BRIDGE RECT 3P 1.2KV 55A MT-K
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| VS-52MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| VS-53MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Current - Average Rectified (Io): 55 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| VS-70MT060WHTAPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 100A 347W MTP
Input Capacitance (Cies) @ Vce: 8 nF @ 30 V
Current - Collector Cutoff (Max): 700 µA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
Description: IGBT MODULE 600V 100A 347W MTP
Input Capacitance (Cies) @ Vce: 8 nF @ 30 V
Current - Collector Cutoff (Max): 700 µA
Power - Max: 347 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: MTP
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| VS-70MT120KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3P 1.2KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4756.93 грн |
| VS-70MT140KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.4KV 70A MT-K
Current - Average Rectified (Io): 70 A
Voltage - Peak Reverse (Max): 1.4 kV
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Description: BRIDGE RECT 3P 1.4KV 70A MT-K
Current - Average Rectified (Io): 70 A
Voltage - Peak Reverse (Max): 1.4 kV
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| VS-70MT160PAPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tray
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tray
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3113.56 грн |
| VS-70MT160PBPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tube
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tube
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2925.74 грн |
| 15+ | 2020.82 грн |
| VS-70MT80KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 800V 70A MT-K
Current - Average Rectified (Io): 70 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Description: BRIDGE RECT 3PHASE 800V 70A MT-K
Current - Average Rectified (Io): 70 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| VS-90MT120KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
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В кошику
од. на суму грн.
| VS-90MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4755.39 грн |
| VS-91MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| VS-92MT120KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| VS-92MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| VS-93MT160KPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: MT-K
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| VS-HFA140FA60 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 70A 600V SOT-227
Description: DIODE HEXFRED 70A 600V SOT-227
товару немає в наявності
Мінімальне замовлення: 160 шт
В кошику
од. на суму грн.
| VS-HFA140NJ60CPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 167A TO244AB
Current - Reverse Leakage @ Vr: 4 mA @ 480 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 167A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 33 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Tray
Description: DIODE MOD GP 600V 167A TO244AB
Current - Reverse Leakage @ Vr: 4 mA @ 480 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 167A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 33 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| VS-HFA200FA120P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 100A 1200V SOT-227
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 100A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Description: DIODE HEXFRED 100A 1200V SOT-227
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 100A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| VS-HFA280NJ60CPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 280A TO244AB
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 280A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 39 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Tray
Description: DIODE MOD GP 600V 280A TO244AB
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-244AB
Current - Average Rectified (Io) (per Diode): 280A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 39 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| VS-HFA60EA120P |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE MODULE GP 1200V 30A SOT227
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
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В кошику
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| VS-HFA60FA120P |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 123 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Description: DIODE MODULE GP 1200V 30A SOT227
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 123 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
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В кошику
од. на суму грн.
| VS-HFA70FA120 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 70A SOT227
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 70A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 51 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Description: DIODE MODULE GP 1200V 70A SOT227
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 70A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 51 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
товару немає в наявності
Мінімальне замовлення: 160 шт
В кошику
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| VS-HFA80FA120P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 40A 1200V SOT-227
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 40A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Description: DIODE HEXFRED 40A 1200V SOT-227
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 40A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
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В кошику
од. на суму грн.
| VS-100BGQ015HF4 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 375 шт
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| VS-100BGQ030HF4 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 375 шт
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| VS-100BGQ045HF4 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 375 шт
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| VS-10CTQ150-1PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO2623
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-262-3
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOTT 150V 5A TO2623
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-262-3
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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| VS-10CWH02FN-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
на замовлення 10148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.24 грн |
| 75+ | 54.05 грн |
| 150+ | 48.47 грн |
| 525+ | 38.01 грн |
| 1050+ | 34.77 грн |
| 2025+ | 32.18 грн |
| 5025+ | 28.75 грн |
| 10050+ | 26.94 грн |
| VS-10ETF02FP-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 10A TO220-2FP
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE GP 200V 10A TO220-2FP
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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Мінімальне замовлення: 1000 шт
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| VS-10ETF02-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO220AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Description: DIODE GEN PURP 200V 10A TO220AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 8000 шт
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| VS-10ETF02SPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE GEN PURP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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| VS-10ETF04FP-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 10A TO220-2FP
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Mounting Type: Through Hole
Description: DIODE GP 400V 10A TO220-2FP
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Mounting Type: Through Hole
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Мінімальне замовлення: 1000 шт
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| VS-10ETF06FP-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 10A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE STANDARD 600V 10A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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Мінімальне замовлення: 1000 шт
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| VS-10ETF06-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 600V 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 8000 шт
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| VS-10ETF10-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 1KV 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 4509 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 235.54 грн |
| 10+ | 147.43 грн |
| 100+ | 102.26 грн |
| 500+ | 77.84 грн |
| 1000+ | 72.02 грн |
| 2000+ | 67.12 грн |
| VS-10ETF10SPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Description: DIODE GEN PURP 1KV 10A TO263AB
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| VS-10ETF12FP-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 10A TO220-2FP
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE GP 1.2KV 10A TO220-2FP
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 1069 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.37 грн |
| 50+ | 104.90 грн |
| 100+ | 91.89 грн |
| 500+ | 83.60 грн |
| 1000+ | 73.20 грн |
| VS-10ETF12SPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Description: DIODE GEN PURP 1.2KV 10A TO263AB
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| VS-10ETS08SPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE GEN PURP 800V 10A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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| VS-10RIA100M |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1KV 10A TO208AA
Package / Case: TO-208AA, TO-48-3, Stud
Packaging: Tube
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Voltage - Off State: 1 kV
Current - On State (It (RMS)) (Max): 10 A
Supplier Device Package: TO-208AA (TO-48)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.75 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 25 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 130 mA
Operating Temperature: -65°C ~ 125°C
Description: SCR 1KV 10A TO208AA
Package / Case: TO-208AA, TO-48-3, Stud
Packaging: Tube
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Voltage - Off State: 1 kV
Current - On State (It (RMS)) (Max): 10 A
Supplier Device Package: TO-208AA (TO-48)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.75 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 25 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 130 mA
Operating Temperature: -65°C ~ 125°C
товару немає в наявності
Мінімальне замовлення: 100 шт
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| VS-10RIA120M |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 10A TO-208AA (TO-48)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 10 A
Supplier Device Package: TO-208AA (TO-48)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.75 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 25 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 130 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AA, TO-48-3, Stud
Packaging: Tube
Description: SCR 1.2KV 10A TO-208AA (TO-48)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 10 A
Supplier Device Package: TO-208AA (TO-48)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.75 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 25 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 130 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AA, TO-48-3, Stud
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 100 шт
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| VS-10RIA40M |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 400V 10A TO-208AA (TO-48)
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 400 V
Description: SCR 400V 10A TO-208AA (TO-48)
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 400 V
товару немає в наявності
Мінімальне замовлення: 100 шт
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| VS-10RIA80M |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A TO208AA
Supplier Device Package: TO-208AA (TO-48)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.75 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 25 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 130 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AA, TO-48-3, Stud
Packaging: Tube
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 10 A
Description: SCR 800V 10A TO208AA
Supplier Device Package: TO-208AA (TO-48)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.75 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 25 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 130 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AA, TO-48-3, Stud
Packaging: Tube
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 10 A
товару немає в наявності
Мінімальне замовлення: 100 шт
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| VS-10TQ035-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Description: DIODE SCHOTTKY 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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| VS-10TQ045-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO220AC
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SCHOTTKY 45V 10A TO220AC
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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| VS-10WQ045FNHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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Мінімальне замовлення: 3000 шт
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| VS-112CNQ030ASLPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V D618SL
Description: DIODE ARRAY SCHOTTKY 30V D618SL
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Мінімальне замовлення: 400 шт
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| VS-112CNQ030ASMPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V D618SM
Description: DIODE ARRAY SCHOTTKY 30V D618SM
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Мінімальне замовлення: 400 шт
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| VS-12CWQ04FNHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
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Мінімальне замовлення: 3000 шт
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| VS-12CWQ06FN-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
на замовлення 2895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.74 грн |
| 75+ | 35.78 грн |
| VS-12CWQ10FN-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 8037 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.12 грн |
| 75+ | 30.15 грн |
| 150+ | 28.96 грн |
| 525+ | 23.23 грн |
| 1050+ | 22.41 грн |
| 2025+ | 22.24 грн |
| 5025+ | 21.27 грн |
| VS-12EWH06FN-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 12A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 12A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.49 грн |
| 75+ | 72.70 грн |
| 150+ | 65.51 грн |
| 525+ | 51.87 грн |
| 1050+ | 47.72 грн |
| VS-12TQ040SPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 15A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE SCHOTTKY 40V 15A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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| VS-12TTS08-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 12.5A TO220AB
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12.5 A
Part Status: Active
Supplier Device Package: TO-220-3
Current - Off State (Max): 50 µA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 8 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: SCR 800V 12.5A TO220AB
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12.5 A
Part Status: Active
Supplier Device Package: TO-220-3
Current - Off State (Max): 50 µA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 8 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 676 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 250.16 грн |
| 50+ | 132.80 грн |
| 100+ | 121.68 грн |
| 500+ | 95.65 грн |
| VS-12TTS08SPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 12.5A TO263AB
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12.5 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-263AB (D²PAK)
Current - Off State (Max): 50 µA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 8 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: SCR 800V 12.5A TO263AB
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12.5 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-263AB (D²PAK)
Current - Off State (Max): 50 µA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 8 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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| VS-150EBU04HF4 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 150A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STD 400V 150A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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| VS-150U100DL |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1000V 150A DO-8
Description: DIODE GP 1000V 150A DO-8
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Мінімальне замовлення: 25 шт
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