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VS-MBRB20100CTGPBF VS-MBRB20100CTGPBF Vishay General Semiconductor - Diodes Division MBRB20...CTGPBF%2CMBR20...CTG-1PBF%20Series.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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VS-MBRB2080CTGPBF VS-MBRB2080CTGPBF Vishay General Semiconductor - Diodes Division MBRB20...CTGPBF,MBR20...CTG-1PBF%20Series.pdf Description: DIODE SCHOTTKY 80V 10A D2PAK
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VS-MBRD330-M3 VS-MBRD330-M3 Vishay General Semiconductor - Diodes Division mbrd320p.pdf Description: DIODE SCHOTTKY 30V 3A TO252
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VS-MBRD650CT-M3 VS-MBRD650CT-M3 Vishay General Semiconductor - Diodes Division vs-mbrd650c.pdf Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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VS-MUR1020CT-N3 VS-MUR1020CT-N3 Vishay General Semiconductor - Diodes Division VS-MUR1020CT%28PbF%2CN3%29.pdf Description: DIODE ARRAY GP 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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VS-MUR1520-N3 VS-MUR1520-N3 Vishay General Semiconductor - Diodes Division VS-MUR1520%28PBF%2CN3%29.pdf Description: DIODE STANDARD 200V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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VS-MUR2020CT-N3 VS-MUR2020CT-N3 Vishay General Semiconductor - Diodes Division vs-mur2020ct-m3.pdf Description: DIODE ARRAY GP 200V 10A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
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VS-MURB1620CT-1HM3 VS-MURB1620CT-1HM3 Vishay General Semiconductor - Diodes Division vs-murb1620cthm3.pdf Description: DIODE ARRAY GP 200V 8A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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VS-MURB1620CTHM3 VS-MURB1620CTHM3 Vishay General Semiconductor - Diodes Division vs-murb1620cthm3.pdf Description: DIODE ARRAY GP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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VS-MURB2020CT-1HM3 VS-MURB2020CT-1HM3 Vishay General Semiconductor - Diodes Division vs-murb2020cthm3.pdf Description: DIODE ARRAY GP 200V 10A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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VS-STPS30L30CT-N3 VS-STPS30L30CT-N3 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 15A TO220AB
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VS-STPS40L15CT-N3 VS-STPS40L15CT-N3 Vishay General Semiconductor - Diodes Division VS-STPS40L15CT%28PbF%2CN3%29.pdf Description: DIODE ARR SCHOTT 15V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 19 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
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VT10200C-M3/4W VT10200C-M3/4W Vishay General Semiconductor - Diodes Division vt10200c-m3.pdf Description: DIODE ARR SCHOTT 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
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VT1045CHM3/4W VT1045CHM3/4W Vishay General Semiconductor - Diodes Division vt1045c.pdf Description: DIODE ARRAY SCHOT 45V 5A TO220AB
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VT1045C-M3/4W VT1045C-M3/4W Vishay General Semiconductor - Diodes Division vt1045c.pdf Description: DIODE ARRAY SCHOT 45V 5A TO220AB
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VT2060G-E3/4W VT2060G-E3/4W Vishay General Semiconductor - Diodes Division vt2060g.pdf Description: DIODE ARR SCHOTT 60V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
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VT2080C-E3/4W VT2080C-E3/4W Vishay General Semiconductor - Diodes Division vt2080c.pdf Description: DIODE ARR SCHOTT 80V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 80 V
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VT2080C-M3/4W VT2080C-M3/4W Vishay General Semiconductor - Diodes Division vt2080c.pdf Description: DIODE ARR SCHOTT 80V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 80 V
Qualification: AEC-Q101
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VT2080S-E3/4W VT2080S-E3/4W Vishay General Semiconductor - Diodes Division vt2080s.pdf Description: DIODE SCHOTTKY 80V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
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VT2080S-M3/4W VT2080S-M3/4W Vishay General Semiconductor - Diodes Division vt2080s.pdf Description: DIODE SCHOTTKY 80V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
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VT3045C-M3/4W VT3045C-M3/4W Vishay General Semiconductor - Diodes Division vt3045c.pdf Description: DIODE SCHOTTKY 45V 15A TO-220AB
на замовлення 2218 шт:
термін постачання 21-31 дні (днів)
2+168.50 грн
10+146.11 грн
100+117.41 грн
500+90.52 грн
1000+80.52 грн
Мінімальне замовлення: 2
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VT3060G-E3/4W VT3060G-E3/4W Vishay General Semiconductor - Diodes Division vt3060g.pdf Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 A
Current - Reverse Leakage @ Vr: 850 µA @ 60 V
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VT3080SHM3/4W VT3080SHM3/4W Vishay General Semiconductor - Diodes Division vt3080s.pdf Description: DIODE SCHOTTKY 80V 30A TO220-3
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VT3080S-M3/4W VT3080S-M3/4W Vishay General Semiconductor - Diodes Division vt3080s.pdf Description: DIODE SCHOTTKY 80V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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VT30L60C-E3/4W VT30L60C-E3/4W Vishay General Semiconductor - Diodes Division vt30l60c.pdf Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
на замовлення 7960 шт:
термін постачання 21-31 дні (днів)
2+166.86 грн
10+103.73 грн
100+71.48 грн
500+56.50 грн
Мінімальне замовлення: 2
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VT30L60C-M3/4W VT30L60C-M3/4W Vishay General Semiconductor - Diodes Division vt30l60.pdf Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
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VT4045C-M3/4W VT4045C-M3/4W Vishay General Semiconductor - Diodes Division vt4045c.pdf Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Qualification: AEC-Q101
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VT4060C-E3/4W VT4060C-E3/4W Vishay General Semiconductor - Diodes Division vt4060c.pdf Description: DIODE ARR SCHOTT 60V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 6 mA @ 60 V
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VT4060C-M3/4W VT4060C-M3/4W Vishay General Semiconductor - Diodes Division vt4060c.pdf Description: DIODE ARR SCHOTT 60V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 6 mA @ 60 V
Qualification: AEC-Q101
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VT40L45PW-M3/4W VT40L45PW-M3/4W Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 20A TMBS
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VT6045C-M3/4W VT6045C-M3/4W Vishay General Semiconductor - Diodes Division vt6045c.pdf Description: DIODE ARR SCHOTT 45V 30A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Qualification: AEC-Q101
на замовлення 7400 шт:
термін постачання 21-31 дні (днів)
2+307.55 грн
10+194.63 грн
100+136.99 грн
500+105.45 грн
1000+98.03 грн
2000+94.74 грн
Мінімальне замовлення: 2
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VT760-E3/4W VT760-E3/4W Vishay General Semiconductor - Diodes Division vt760.pdf Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
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VT760-M3/4W VT760-M3/4W Vishay General Semiconductor - Diodes Division vt760.pdf Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
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VS-111RKI40 Vishay General Semiconductor - Diodes Division vs-110rkipb.pdf Description: SCR 400V 172A TO209AC
Packaging: Bulk
Package / Case: TO-209AC, TO-94-4, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1750A, 1830A
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.57 V
Current - Off State (Max): 20 mA
Supplier Device Package: TO-209AC (TO-94)
Current - On State (It (RMS)) (Max): 172 A
Voltage - Off State: 400 V
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VS-ST700C12L1 VS-ST700C12L1 Vishay General Semiconductor - Diodes Division vs-st700clseries.pdf Description: SCR 1.2KV 1857A B-PUK
Packaging: Bulk
Package / Case: TO-200AC, B-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13200A, 13800A
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 80 mA
Supplier Device Package: TO-200AC, B-PUK
Current - On State (It (RMS)) (Max): 1857 A
Voltage - Off State: 1.2 kV
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VS-VSKL142/14PBF VS-VSKL142/14PBF Vishay General Semiconductor - Diodes Division vs-vsk136pbfseries.pdf Description: MODULE DIODE 140A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A, 4712A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 310 A
Voltage - Off State: 1.4 kV
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VS-2EJH02HM3/6B VS-2EJH02HM3/6B Vishay General Semiconductor - Diodes Division vs-2ejh02hm3.pdf Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
14000+12.25 грн
28000+11.32 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
VS-2EJH02-M3/6B VS-2EJH02-M3/6B Vishay General Semiconductor - Diodes Division vs-2ejh02-m3.pdf Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-3EJH01HM3/6B VS-3EJH01HM3/6B Vishay General Semiconductor - Diodes Division vs-3ejh01hm3.pdf Description: DIODE GEN PURP 100V 3A DO221AC
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VS-3EJH01-M3/6B VS-3EJH01-M3/6B Vishay General Semiconductor - Diodes Division vs-3ejh01-m3.pdf Description: DIODE GEN PURP 100V 3A DO221AC
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VS-2EJH02HM3/6B VS-2EJH02HM3/6B Vishay General Semiconductor - Diodes Division vs-2ejh02hm3.pdf Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 37945 шт:
термін постачання 21-31 дні (днів)
7+53.17 грн
10+33.40 грн
100+23.02 грн
500+16.46 грн
1000+13.99 грн
2000+13.20 грн
5000+11.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
VS-2EJH02-M3/6B VS-2EJH02-M3/6B Vishay General Semiconductor - Diodes Division vs-2ejh02-m3.pdf Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 17871 шт:
термін постачання 21-31 дні (днів)
9+39.26 грн
15+22.21 грн
100+19.72 грн
500+14.14 грн
1000+10.55 грн
2000+10.16 грн
5000+9.59 грн
Мінімальне замовлення: 9
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VS-3EJH01HM3/6B VS-3EJH01HM3/6B Vishay General Semiconductor - Diodes Division vs-3ejh01hm3.pdf Description: DIODE GEN PURP 100V 3A DO221AC
на замовлення 181 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
VS-3EJH01-M3/6B VS-3EJH01-M3/6B Vishay General Semiconductor - Diodes Division vs-3ejh01-m3.pdf Description: DIODE GEN PURP 100V 3A DO221AC
на замовлення 7962 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMBJ18CA-M3/52 SMBJ18CA-M3/52 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 18VWM 29.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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VS-1EFH01WHM3-18 VS-1EFH01WHM3-18 Vishay General Semiconductor - Diodes Division VS-1EFH01WHM3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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VS-1EFH02WHM3-18 VS-1EFH02WHM3-18 Vishay General Semiconductor - Diodes Division VS-1EFH02WHM3.pdf Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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VS-1EFH01W-M3-18 VS-1EFH01W-M3-18 Vishay General Semiconductor - Diodes Division VS-1EFH01W-M3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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VS-1EFH02W-M3-18 VS-1EFH02W-M3-18 Vishay General Semiconductor - Diodes Division VS-1EFH02W-M3.pdf Description: DIODE GEN PURP 200V 1A SMF
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VS-1EFH02WHM3-18 VS-1EFH02WHM3-18 Vishay General Semiconductor - Diodes Division VS-1EFH02WHM3.pdf Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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VS-1EFH02W-M3-18 VS-1EFH02W-M3-18 Vishay General Semiconductor - Diodes Division VS-1EFH02W-M3.pdf Description: DIODE GEN PURP 200V 1A SMF
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V20DL45-M3/I V20DL45-M3/I Vishay General Semiconductor - Diodes Division v20dl45.pdf Description: DIODE SCHOTTKY 45V 20A TO263AC
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
2000+34.52 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
V30DL45BP-M3/I V30DL45BP-M3/I Vishay General Semiconductor - Diodes Division v30dl45bp.pdf Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+32.45 грн
4000+28.76 грн
Мінімальне замовлення: 2000
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V20DL45-M3/I V20DL45-M3/I Vishay General Semiconductor - Diodes Division v20dl45.pdf Description: DIODE SCHOTTKY 45V 20A TO263AC
на замовлення 9778 шт:
термін постачання 21-31 дні (днів)
5+72.80 грн
10+63.01 грн
100+49.13 грн
500+38.08 грн
1000+31.20 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
V30DL45BP-M3/I V30DL45BP-M3/I Vishay General Semiconductor - Diodes Division v30dl45bp.pdf Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 6314 шт:
термін постачання 21-31 дні (днів)
4+97.34 грн
10+62.85 грн
100+49.56 грн
500+36.54 грн
1000+32.70 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V30DL45-M3/I V30DL45-M3/I Vishay General Semiconductor - Diodes Division v30dl45.pdf Description: DIODE SCHOTTKY 45V 30A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+33.16 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
V40DL45BP-M3/I V40DL45BP-M3/I Vishay General Semiconductor - Diodes Division v40dl45bp.pdf Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+36.30 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
V30DL45-M3/I V30DL45-M3/I Vishay General Semiconductor - Diodes Division v30dl45.pdf Description: DIODE SCHOTTKY 45V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 4248 шт:
термін постачання 21-31 дні (днів)
4+92.43 грн
10+62.07 грн
100+49.56 грн
500+36.54 грн
1000+33.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V40DL45BP-M3/I V40DL45BP-M3/I Vishay General Semiconductor - Diodes Division v40dl45bp.pdf Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 3974 шт:
термін постачання 21-31 дні (днів)
4+87.52 грн
10+69.16 грн
100+53.78 грн
500+42.78 грн
1000+34.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PLZ18A-G3/H PLZ18A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
товару немає в наявності
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VS-MBRB20100CTGPBF MBRB20...CTGPBF%2CMBR20...CTG-1PBF%20Series.pdf
VS-MBRB20100CTGPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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VS-MBRB2080CTGPBF MBRB20...CTGPBF,MBR20...CTG-1PBF%20Series.pdf
VS-MBRB2080CTGPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 10A D2PAK
товару немає в наявності
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VS-MBRD330-M3 mbrd320p.pdf
VS-MBRD330-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3A TO252
товару немає в наявності
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VS-MBRD650CT-M3 vs-mbrd650c.pdf
VS-MBRD650CT-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
товару немає в наявності
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VS-MUR1020CT-N3 VS-MUR1020CT%28PbF%2CN3%29.pdf
VS-MUR1020CT-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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VS-MUR1520-N3 VS-MUR1520%28PBF%2CN3%29.pdf
VS-MUR1520-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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VS-MUR2020CT-N3 vs-mur2020ct-m3.pdf
VS-MUR2020CT-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
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VS-MURB1620CT-1HM3 vs-murb1620cthm3.pdf
VS-MURB1620CT-1HM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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VS-MURB1620CTHM3 vs-murb1620cthm3.pdf
VS-MURB1620CTHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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VS-MURB2020CT-1HM3 vs-murb2020cthm3.pdf
VS-MURB2020CT-1HM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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VS-STPS30L30CT-N3
VS-STPS30L30CT-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 15A TO220AB
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VS-STPS40L15CT-N3 VS-STPS40L15CT%28PbF%2CN3%29.pdf
VS-STPS40L15CT-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 15V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 19 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
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VT10200C-M3/4W vt10200c-m3.pdf
VT10200C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
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VT1045CHM3/4W vt1045c.pdf
VT1045CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 45V 5A TO220AB
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VT1045C-M3/4W vt1045c.pdf
VT1045C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 45V 5A TO220AB
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VT2060G-E3/4W vt2060g.pdf
VT2060G-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
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VT2080C-E3/4W vt2080c.pdf
VT2080C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 80 V
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VT2080C-M3/4W vt2080c.pdf
VT2080C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 80 V
Qualification: AEC-Q101
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VT2080S-E3/4W vt2080s.pdf
VT2080S-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
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VT2080S-M3/4W vt2080s.pdf
VT2080S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
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VT3045C-M3/4W vt3045c.pdf
VT3045C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 15A TO-220AB
на замовлення 2218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+168.50 грн
10+146.11 грн
100+117.41 грн
500+90.52 грн
1000+80.52 грн
Мінімальне замовлення: 2
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VT3060G-E3/4W vt3060g.pdf
VT3060G-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 A
Current - Reverse Leakage @ Vr: 850 µA @ 60 V
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VT3080SHM3/4W vt3080s.pdf
VT3080SHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 30A TO220-3
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VT3080S-M3/4W vt3080s.pdf
VT3080S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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VT30L60C-E3/4W vt30l60c.pdf
VT30L60C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
на замовлення 7960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.86 грн
10+103.73 грн
100+71.48 грн
500+56.50 грн
Мінімальне замовлення: 2
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VT30L60C-M3/4W vt30l60.pdf
VT30L60C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
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VT4045C-M3/4W vt4045c.pdf
VT4045C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Qualification: AEC-Q101
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VT4060C-E3/4W vt4060c.pdf
VT4060C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 6 mA @ 60 V
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VT4060C-M3/4W vt4060c.pdf
VT4060C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 6 mA @ 60 V
Qualification: AEC-Q101
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VT40L45PW-M3/4W
VT40L45PW-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TMBS
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VT6045C-M3/4W vt6045c.pdf
VT6045C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Qualification: AEC-Q101
на замовлення 7400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+307.55 грн
10+194.63 грн
100+136.99 грн
500+105.45 грн
1000+98.03 грн
2000+94.74 грн
Мінімальне замовлення: 2
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VT760-E3/4W vt760.pdf
VT760-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
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VT760-M3/4W vt760.pdf
VT760-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
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VS-111RKI40 vs-110rkipb.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 400V 172A TO209AC
Packaging: Bulk
Package / Case: TO-209AC, TO-94-4, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1750A, 1830A
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.57 V
Current - Off State (Max): 20 mA
Supplier Device Package: TO-209AC (TO-94)
Current - On State (It (RMS)) (Max): 172 A
Voltage - Off State: 400 V
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VS-ST700C12L1 vs-st700clseries.pdf
VS-ST700C12L1
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 1857A B-PUK
Packaging: Bulk
Package / Case: TO-200AC, B-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13200A, 13800A
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 80 mA
Supplier Device Package: TO-200AC, B-PUK
Current - On State (It (RMS)) (Max): 1857 A
Voltage - Off State: 1.2 kV
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VS-VSKL142/14PBF vs-vsk136pbfseries.pdf
VS-VSKL142/14PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 140A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A, 4712A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 310 A
Voltage - Off State: 1.4 kV
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VS-2EJH02HM3/6B vs-2ejh02hm3.pdf
VS-2EJH02HM3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14000+12.25 грн
28000+11.32 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
VS-2EJH02-M3/6B vs-2ejh02-m3.pdf
VS-2EJH02-M3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-3EJH01HM3/6B vs-3ejh01hm3.pdf
VS-3EJH01HM3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
товару немає в наявності
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VS-3EJH01-M3/6B vs-3ejh01-m3.pdf
VS-3EJH01-M3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
товару немає в наявності
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VS-2EJH02HM3/6B vs-2ejh02hm3.pdf
VS-2EJH02HM3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 37945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.17 грн
10+33.40 грн
100+23.02 грн
500+16.46 грн
1000+13.99 грн
2000+13.20 грн
5000+11.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
VS-2EJH02-M3/6B vs-2ejh02-m3.pdf
VS-2EJH02-M3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 17871 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.26 грн
15+22.21 грн
100+19.72 грн
500+14.14 грн
1000+10.55 грн
2000+10.16 грн
5000+9.59 грн
Мінімальне замовлення: 9
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VS-3EJH01HM3/6B vs-3ejh01hm3.pdf
VS-3EJH01HM3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
на замовлення 181 шт:
термін постачання 21-31 дні (днів)
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VS-3EJH01-M3/6B vs-3ejh01-m3.pdf
VS-3EJH01-M3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
на замовлення 7962 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMBJ18CA-M3/52 smbj.pdf
SMBJ18CA-M3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
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VS-1EFH01WHM3-18 VS-1EFH01WHM3.pdf
VS-1EFH01WHM3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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VS-1EFH02WHM3-18 VS-1EFH02WHM3.pdf
VS-1EFH02WHM3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
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VS-1EFH01W-M3-18 VS-1EFH01W-M3.pdf
VS-1EFH01W-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
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VS-1EFH02W-M3-18 VS-1EFH02W-M3.pdf
VS-1EFH02W-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A SMF
товару немає в наявності
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VS-1EFH02WHM3-18 VS-1EFH02WHM3.pdf
VS-1EFH02WHM3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
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VS-1EFH02W-M3-18 VS-1EFH02W-M3.pdf
VS-1EFH02W-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A SMF
товару немає в наявності
В кошику  од. на суму  грн.
V20DL45-M3/I v20dl45.pdf
V20DL45-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO263AC
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+34.52 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
V30DL45BP-M3/I v30dl45bp.pdf
V30DL45BP-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+32.45 грн
4000+28.76 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
V20DL45-M3/I v20dl45.pdf
V20DL45-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO263AC
на замовлення 9778 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+72.80 грн
10+63.01 грн
100+49.13 грн
500+38.08 грн
1000+31.20 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
V30DL45BP-M3/I v30dl45bp.pdf
V30DL45BP-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 6314 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.34 грн
10+62.85 грн
100+49.56 грн
500+36.54 грн
1000+32.70 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V30DL45-M3/I v30dl45.pdf
V30DL45-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+33.16 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
V40DL45BP-M3/I v40dl45bp.pdf
V40DL45BP-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+36.30 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
V30DL45-M3/I v30dl45.pdf
V30DL45-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 4248 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.43 грн
10+62.07 грн
100+49.56 грн
500+36.54 грн
1000+33.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V40DL45BP-M3/I v40dl45bp.pdf
V40DL45BP-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 3974 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.52 грн
10+69.16 грн
100+53.78 грн
500+42.78 грн
1000+34.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PLZ18A-G3/H plzseries.pdf
PLZ18A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
товару немає в наявності
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