Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40049) > Сторінка 336 з 668
| Фото | Назва | Виробник | Інформація |
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VS-100MT160PBPBF | Vishay General Semiconductor - Diodes Division |
 Description: BRIDGE RECT 3P 1.6KV 100A 7-MTPBPackaging: Tray Package / Case: 7-MTPB Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 7-MTPB Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 100 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
на замовлення 98 шт: термін постачання 21-31 дні (днів) |
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VS-100MT160P-P | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 100A 12MTP Packaging: Tray Package / Case: 12-MTP Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 12-MTP Pressfit Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 100 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-110MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 110A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 110 A |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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| VS-110MT80KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 800V 110A MT-K |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-111MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 110A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 110 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-112MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 110A MT-K |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-112MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 110A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 110 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-130MT100KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1KV 130A MT-K |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-130MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 130A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 130 A |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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VS-36MT5 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 3PHASE 600V 35A D-63 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| VS-401CNQ040PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD SCHOTT 40V 40A TO244AB Packaging: Tray Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-244AB Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A Current - Reverse Leakage @ Vr: 4 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-40MT120UHAPBF | Vishay General Semiconductor - Diodes Division | Description: IGBT MODULE 1200V 80A 463W MTP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-40MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 40A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-40MT160PAPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 40A 7MTPA Packaging: Tray Package / Case: 7-MTPA Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 7-MTPA Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-40MT160P-P | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 45A 12MTP Packaging: Tube Package / Case: 12-MTP Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 12-MTP Pressfit Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 45 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-50MT060WHTAPBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 114A 658W MTP Packaging: Tray Package / Case: 12-MTP Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: MTP Part Status: Obsolete Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 658 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| VS-51MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 55A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 55 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-52MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 55A MT-K |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-52MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 55A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 55 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-53MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 55A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 55 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-70MT060WHTAPBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 100A 347W MTP Packaging: Tray Package / Case: 12-MTP Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A NTC Thermistor: No Supplier Device Package: MTP IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 347 W Current - Collector Cutoff (Max): 700 µA Input Capacitance (Cies) @ Vce: 8 nF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-70MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 70A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 70 A |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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| VS-70MT140KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.4KV 70A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.4 kV Current - Average Rectified (Io): 70 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-70MT160PAPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK Packaging: Tray Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 75 A |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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VS-70MT160PBPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK Packaging: Tube Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 75 A |
на замовлення 83 шт: термін постачання 21-31 дні (днів) |
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| VS-70MT80KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 800V 70A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 70 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-90MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 90A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 90 A |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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VS-90MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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| VS-91MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-92MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 90A MT-K |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-92MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-93MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-HFA140FA60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 70A 600V SOT-227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| VS-HFA140NJ60CPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 167A TO244AB Packaging: Tray Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 167A Supplier Device Package: TO-244AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A Current - Reverse Leakage @ Vr: 4 mA @ 480 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VS-HFA200FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 100A 1200V SOT-227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-HFA280NJ60CPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 280A TO244AB Packaging: Tray Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 39 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 280A Supplier Device Package: TO-244AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A Current - Reverse Leakage @ Vr: 8 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-HFA60EA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 30A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-HFA60FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 30A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 123 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-HFA70FA120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 70A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 51 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 70A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-HFA80FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 40A 1200V SOT-227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 40A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-100BGQ015HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A Current - Reverse Leakage @ Vr: 18 mA @ 15 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-100BGQ030HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-100BGQ045HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2700pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10CTQ150-1PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 150V 5A TO2623 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-262-3 Operating Temperature - Junction: 175°C (Max) Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10CWH02FN-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 10A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 200 V |
на замовлення 10674 шт: термін постачання 21-31 дні (днів) |
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VS-10ETF02FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 10A TO220-2FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10ETF02-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10ETF02SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10ETF04FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 400V 10A TO220-2FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10ETF06FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 10A TO220-2FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10ETF06-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10ETF10-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
на замовлення 4509 шт: термін постачання 21-31 дні (днів) |
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VS-10ETF10SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 10A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10ETF12FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 10A TO220-2FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
на замовлення 1069 шт: термін постачання 21-31 дні (днів) |
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VS-10ETF12SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10ETS08SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 10A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10RIA100M | Vishay General Semiconductor - Diodes Division |
Description: SCR 1KV 10A TO208AA Packaging: Tube Package / Case: TO-208AA, TO-48-3, Stud Mounting Type: Chassis, Stud Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 130 mA Current - Gate Trigger (Igt) (Max): 60 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A Current - On State (It (AV)) (Max): 25 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.75 V Current - Off State (Max): 10 mA Supplier Device Package: TO-208AA (TO-48) Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 1 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10RIA120M | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 10A TO208AA Packaging: Tube Package / Case: TO-208AA, TO-48-3, Stud Mounting Type: Chassis, Stud Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 130 mA Current - Gate Trigger (Igt) (Max): 60 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A Current - On State (It (AV)) (Max): 25 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.75 V Current - Off State (Max): 10 mA Supplier Device Package: TO-208AA (TO-48) Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 1.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10RIA40M | Vishay General Semiconductor - Diodes Division |
Description: SCR 400V 10A TO208AA Packaging: Tube Package / Case: TO-208AA, TO-48-3, Stud Mounting Type: Chassis, Stud Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 130 mA Current - Gate Trigger (Igt) (Max): 60 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A Current - On State (It (AV)) (Max): 25 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.75 V Current - Off State (Max): 10 mA Supplier Device Package: TO-208AA (TO-48) Part Status: Active Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-10RIA80M | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 10A TO208AA Packaging: Tube Package / Case: TO-208AA, TO-48-3, Stud Mounting Type: Chassis, Stud Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 130 mA Current - Gate Trigger (Igt) (Max): 60 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A Current - On State (It (AV)) (Max): 25 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.75 V Current - Off State (Max): 10 mA Supplier Device Package: TO-208AA (TO-48) Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-100MT160PBPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 100A 7-MTPB
Packaging: Tray
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPB
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 100A 7-MTPB
Packaging: Tray
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPB
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
на замовлення 98 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2708.94 грн |
| 15+ | 1853.71 грн |
| 30+ | 1730.16 грн |
| VS-100MT160P-P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 100A 12MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 100A 12MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-110MT120KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 110 A
Description: BRIDGE RECT 3P 1.2KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 110 A
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5842.83 грн |
| 15+ | 5098.73 грн |
| VS-110MT80KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 800V 110A MT-K
Description: BRIDGE RECT 3P 800V 110A MT-K
товару немає в наявності
В кошику
од. на суму грн.
| VS-111MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 110 A
Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 110 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-112MT120KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 110A MT-K
Description: BRIDGE RECT 3P 1.2KV 110A MT-K
товару немає в наявності
В кошику
од. на суму грн.
| VS-112MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 110 A
Description: BRIDGE RECT 3P 1.6KV 110A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 110 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-130MT100KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1KV 130A MT-K
Description: BRIDGE RECT 3PHASE 1KV 130A MT-K
товару немає в наявності
В кошику
од. на суму грн.
| VS-130MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 130A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 130 A
Description: BRIDGE RECT 3P 1.6KV 130A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 130 A
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4990.52 грн |
| 15+ | 4774.17 грн |
| VS-36MT5 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 600V 35A D-63
Description: BRIDGE RECT 3PHASE 600V 35A D-63
товару немає в наявності
В кошику
од. на суму грн.
| VS-401CNQ040PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOTT 40V 40A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A
Current - Reverse Leakage @ Vr: 4 mA @ 40 V
Description: DIODE MOD SCHOTT 40V 40A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A
Current - Reverse Leakage @ Vr: 4 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-40MT120UHAPBF |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 80A 463W MTP
Description: IGBT MODULE 1200V 80A 463W MTP
товару немає в наявності
В кошику
од. на суму грн.
| VS-40MT160KPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 40A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 40A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-40MT160PAPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 40A 7MTPA
Packaging: Tray
Package / Case: 7-MTPA
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPA
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 40A 7MTPA
Packaging: Tray
Package / Case: 7-MTPA
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPA
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-40MT160P-P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 45A 12MTP
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 45A 12MTP
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 45 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
товару немає в наявності
В кошику
од. на суму грн.
| VS-50MT060WHTAPBF |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 114A 658W MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: MTP
Part Status: Obsolete
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 658 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
Description: IGBT MODULE 600V 114A 658W MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: MTP
Part Status: Obsolete
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 658 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-51MT160KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
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| VS-52MT120KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 55A MT-K
Description: BRIDGE RECT 3P 1.2KV 55A MT-K
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В кошику
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| VS-52MT160KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
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В кошику
од. на суму грн.
| VS-53MT160KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
Description: BRIDGE RECT 3P 1.6KV 55A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 55 A
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| VS-70MT060WHTAPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 100A 347W MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: MTP
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 347 W
Current - Collector Cutoff (Max): 700 µA
Input Capacitance (Cies) @ Vce: 8 nF @ 30 V
Description: IGBT MODULE 600V 100A 347W MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: MTP
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 347 W
Current - Collector Cutoff (Max): 700 µA
Input Capacitance (Cies) @ Vce: 8 nF @ 30 V
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| VS-70MT120KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3P 1.2KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5363.76 грн |
| VS-70MT140KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.4KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3P 1.4KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 70 A
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В кошику
од. на суму грн.
| VS-70MT160PAPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tray
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tray
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2969.96 грн |
| VS-70MT160PBPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tube
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tube
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
на замовлення 83 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2939.72 грн |
| 15+ | 2023.38 грн |
| VS-70MT80KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 800V 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3PHASE 800V 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 70 A
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В кошику
од. на суму грн.
| VS-90MT120KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5202.21 грн |
| VS-90MT160KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5018.38 грн |
| VS-91MT160KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
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В кошику
од. на суму грн.
| VS-92MT120KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
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В кошику
од. на суму грн.
| VS-92MT160KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
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В кошику
од. на суму грн.
| VS-93MT160KPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
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од. на суму грн.
| VS-HFA140FA60 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 70A 600V SOT-227
Description: DIODE HEXFRED 70A 600V SOT-227
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| VS-HFA140NJ60CPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 167A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 167A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A
Current - Reverse Leakage @ Vr: 4 mA @ 480 V
Description: DIODE MOD GP 600V 167A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 167A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A
Current - Reverse Leakage @ Vr: 4 mA @ 480 V
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| VS-HFA200FA120P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 100A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE HEXFRED 100A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
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В кошику
од. на суму грн.
| VS-HFA280NJ60CPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 280A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 280A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Description: DIODE MOD GP 600V 280A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 280A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
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В кошику
од. на суму грн.
| VS-HFA60EA120P |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
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В кошику
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| VS-HFA60FA120P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 123 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 123 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-HFA70FA120 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 70A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 51 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE MODULE GP 1200V 70A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 51 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
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| VS-HFA80FA120P |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 40A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Description: DIODE HEXFRED 40A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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| VS-100BGQ015HF4 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
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| VS-100BGQ030HF4 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
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| VS-100BGQ045HF4 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
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| VS-10CTQ150-1PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 150V 5A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
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| VS-10CWH02FN-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
на замовлення 10674 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.31 грн |
| 75+ | 39.19 грн |
| 150+ | 35.02 грн |
| 525+ | 27.30 грн |
| 1050+ | 24.89 грн |
| 2025+ | 22.99 грн |
| VS-10ETF02FP-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GP 200V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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| VS-10ETF02-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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В кошику
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| VS-10ETF02SPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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В кошику
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| VS-10ETF04FP-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GP 400V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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В кошику
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| VS-10ETF06FP-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GP 600V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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| VS-10ETF06-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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В кошику
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| VS-10ETF10-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 4509 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 243.52 грн |
| 10+ | 152.42 грн |
| 100+ | 105.72 грн |
| 500+ | 80.48 грн |
| 1000+ | 74.46 грн |
| 2000+ | 69.40 грн |
| VS-10ETF10SPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Description: DIODE GEN PURP 1KV 10A TO263AB
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| VS-10ETF12FP-M3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GP 1.2KV 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 1069 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 216.46 грн |
| 50+ | 108.45 грн |
| 100+ | 95.00 грн |
| 500+ | 86.44 грн |
| 1000+ | 75.68 грн |
| VS-10ETF12SPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Description: DIODE GEN PURP 1.2KV 10A TO263AB
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| VS-10ETS08SPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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В кошику
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| VS-10RIA100M |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1KV 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 1 kV
Description: SCR 1KV 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 1 kV
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| VS-10RIA120M |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 1.2 kV
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| VS-10RIA40M |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 400V 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 400 V
Description: SCR 400V 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 400 V
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| VS-10RIA80M |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
Description: SCR 800V 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
товару немає в наявності
В кошику
од. на суму грн.