Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41148) > Сторінка 369 з 686
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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TZM5221B-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.4V 500MW SOD80Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-80 MiniMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
на замовлення 14106 шт: термін постачання 21-31 дні (днів) |
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TZM5233B-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6V 500MW SOD80Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: SOD-80 MiniMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V |
на замовлення 14619 шт: термін постачання 21-31 дні (днів) |
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TZMB10-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 500MW SOD80Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V Qualification: AEC-Q101 |
на замовлення 43234 шт: термін постачання 21-31 дні (днів) |
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TZMB20-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 20V 500MW SOD80Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V Qualification: AEC-Q101 |
на замовлення 9334 шт: термін постачання 21-31 дні (днів) |
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TZMB5V6-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW SOD80Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V Qualification: AEC-Q101 |
на замовлення 23683 шт: термін постачання 21-31 дні (днів) |
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TZMC30-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW SOD80Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 22 V Qualification: AEC-Q101 |
на замовлення 4382 шт: термін постачання 21-31 дні (днів) |
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TZMC36-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 36V 500MW SOD80Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 27 V Qualification: AEC-Q101 |
на замовлення 3031 шт: термін постачання 21-31 дні (днів) |
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TZMC3V9-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 500MW SOD80Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 10831 шт: термін постачання 21-31 дні (днів) |
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TZMC6V2-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 500MW SOD80Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 2 V Qualification: AEC-Q101 |
на замовлення 15093 шт: термін постачання 21-31 дні (днів) |
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VBUS053CZ-HAF-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.5VWM 18VC LLP75-7LPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: USB OTG Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: LLP75-7L Unidirectional Channels: 3 Voltage - Breakdown (Min): 6.5V Voltage - Clamping (Max) @ Ipp: 18V Power - Peak Pulse: 54W Power Line Protection: Yes Part Status: Active |
на замовлення 8689 шт: термін постачання 21-31 дні (днів) |
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VCUT05B1-DD1-G-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.5VWM 12.5V LLP10062MPackaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 145°C (TJ) Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: LLP1006-2M Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12.5V Power - Peak Pulse: 38W Power Line Protection: No Part Status: Active |
на замовлення 74765 шт: термін постачання 21-31 дні (днів) |
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VESD03A1C-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3.3VWM 10VC LLP1006-2LPackaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 78pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: LLP1006-2L Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 10V Power - Peak Pulse: 95W Power Line Protection: No |
на замовлення 238272 шт: термін постачання 21-31 дні (днів) |
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ZM4755A-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 43V 1W DO213AB |
на замовлення 9023 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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MBRB1545CTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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MBRB1645HE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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MBRB2045CTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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MBRB745HE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 7.5A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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SBLB1640CTHE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 40V TO263ABPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRB2045CTHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V TO263AB |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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SBLB1640CTHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 40V TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VBUS54FD-SD1-G4-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.5VWM 15VC CLP1007-FLPart Status: Active Power Line Protection: No Power - Peak Pulse: 45W Voltage - Clamping (Max) @ Ipp: 15V Voltage - Breakdown (Min): 6.9V Unidirectional Channels: 4 Supplier Device Package: CLP1007-FL Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 0.9pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 5-XFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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VBUS54FD-SD1-G4-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.5VWM 15VC CLP1007-FLPower Line Protection: No Power - Peak Pulse: 45W Voltage - Clamping (Max) @ Ipp: 15V Voltage - Breakdown (Min): 6.9V Unidirectional Channels: 4 Supplier Device Package: CLP1007-FL Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 0.9pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 5-XFDFN Packaging: Cut Tape (CT) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR2060CT-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 60V 10A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5KE180AL-83E3/72 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 154VWM 246VC 1.5KEQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 246V Voltage - Breakdown (Min): 171V Unidirectional Channels: 1 Supplier Device Package: 1.5KE Voltage - Reverse Standoff (Typ): 154V Current - Peak Pulse (10/1000µs): 6.1A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5KE75AL-407E3/72 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 1500W 1.5KE Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Supplier Device Package: 1.5KE Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5KE75AL407HE3/72 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 1500W 1.5KE Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Supplier Device Package: 1.5KE Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 1N3957GP-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1N4001GPE-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1N4003GPE-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Part Status: Obsolete Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1N4005GPE-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1N4248GP-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Part Status: Obsolete Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1N4935GP-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Part Status: Obsolete Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1N4942GP-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BY252GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3A DO201ADCurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BY253GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 3A DO201ADCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DGP30L-5705E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO201AD Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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EGP10G-M3S/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| EGP30A-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 3A GP20Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 85pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EGP50GL-005E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE GP20 Packaging: Tape & Box (TB) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EGP50GL-6630E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE GP20 Packaging: Tape & Box (TB) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GP10GE-6329M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GP10TE-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RGP10G-6038M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| RGP10J-5025M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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| RGP10J-7008M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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| RGP10M-5010E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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| RGP10M-7008E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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| RGP15J-5012E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.5A DO204ACPackaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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| RGP15JL-6307E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Part Status: Obsolete Packaging: Tape & Box (TB) |
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| RGP30ML-6884E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) Part Status: Obsolete |
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| RGP30ML-6888E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Part Status: Obsolete Packaging: Tape & Box (TB) |
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| SBYV26C-5001M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204ALCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 |
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| TVR06J-5700E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 600MA DO204ALCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 mA Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 600mA Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 300 µs Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
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| TVR06J-5700M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Part Status: Obsolete Packaging: Tape & Box (TB) |
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В кошику од. на суму грн. | |||||||||||||
| TVR10G-5700E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204ALCurrent - Reverse Leakage @ Vr: 10 µA @ 400 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V |
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| TVR10G-5701E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204ALCurrent - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
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| TVR10G-5702E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204ALCurrent - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
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В кошику од. на суму грн. | |||||||||||||
|
1.5KE400A-803E3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 342VWM 548VC 1.5KEQualification: AEC-Q101 Grade: Automotive Current - Peak Pulse (10/1000µs): 2.7A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 548V Voltage - Breakdown (Min): 380V Unidirectional Channels: 1 Supplier Device Package: 1.5KE Voltage - Reverse Standoff (Typ): 342V |
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|
1.5KE400A-804E3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 342VWM 548VC 1.5KEPackaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 2.7A Voltage - Reverse Standoff (Typ): 342V Supplier Device Package: 1.5KE Unidirectional Channels: 1 Voltage - Breakdown (Min): 380V Voltage - Clamping (Max) @ Ipp: 548V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
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В кошику од. на суму грн. | ||||||||||||
| 1N3957GP-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Reel (TR) Mounting Type: Through Hole |
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В кошику од. на суму грн. |
| TZM5221B-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 2.4V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 14106 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.57 грн |
| 37+ | 8.40 грн |
| 100+ | 3.99 грн |
| 500+ | 3.67 грн |
| 1000+ | 3.60 грн |
| TZM5233B-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Description: DIODE ZENER 6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
на замовлення 14619 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.71 грн |
| 29+ | 10.59 грн |
| 100+ | 5.17 грн |
| 500+ | 4.05 грн |
| 1000+ | 2.81 грн |
| TZMB10-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Qualification: AEC-Q101
на замовлення 43234 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 37+ | 8.64 грн |
| 49+ | 6.28 грн |
| 100+ | 3.45 грн |
| 500+ | 3.21 грн |
| TZMB20-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
Description: DIODE ZENER 20V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
на замовлення 9334 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 14.93 грн |
| 30+ | 10.14 грн |
| 100+ | 4.95 грн |
| 500+ | 3.88 грн |
| 1000+ | 2.70 грн |
| TZMB5V6-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
на замовлення 23683 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 37+ | 8.64 грн |
| 65+ | 4.69 грн |
| 133+ | 2.28 грн |
| TZMC30-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
Description: DIODE ZENER 30V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
на замовлення 4382 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.43 грн |
| 48+ | 6.43 грн |
| 104+ | 2.93 грн |
| 500+ | 2.72 грн |
| 1000+ | 2.68 грн |
| TZMC36-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Qualification: AEC-Q101
Description: DIODE ZENER 36V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Qualification: AEC-Q101
на замовлення 3031 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.43 грн |
| 49+ | 6.20 грн |
| 100+ | 3.07 грн |
| 500+ | 2.82 грн |
| 1000+ | 2.75 грн |
| TZMC3V9-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
на замовлення 10831 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.71 грн |
| 20+ | 15.58 грн |
| 100+ | 9.75 грн |
| 500+ | 6.79 грн |
| 1000+ | 6.03 грн |
| TZMC6V2-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Qualification: AEC-Q101
на замовлення 15093 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.43 грн |
| 48+ | 6.43 грн |
| 100+ | 3.07 грн |
| 500+ | 2.82 грн |
| 1000+ | 2.75 грн |
| VBUS053CZ-HAF-G-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 18VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB OTG
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 54W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.5VWM 18VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB OTG
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 54W
Power Line Protection: Yes
Part Status: Active
на замовлення 8689 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.78 грн |
| 18+ | 17.55 грн |
| VCUT05B1-DD1-G-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 12.5V LLP10062M
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2M
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 38W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 12.5V LLP10062M
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2M
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 38W
Power Line Protection: No
Part Status: Active
на замовлення 74765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.07 грн |
| 18+ | 17.47 грн |
| 100+ | 11.01 грн |
| 500+ | 7.70 грн |
| 1000+ | 6.85 грн |
| 2000+ | 6.13 грн |
| VESD03A1C-HD1-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 10VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 78pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 95W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 10VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 78pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 95W
Power Line Protection: No
на замовлення 238272 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.92 грн |
| 20+ | 15.36 грн |
| 100+ | 9.65 грн |
| 500+ | 6.72 грн |
| 1000+ | 5.97 грн |
| 2000+ | 5.33 грн |
| ZM4755A-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 1W DO213AB
Description: DIODE ZENER 43V 1W DO213AB
на замовлення 9023 шт:
термін постачання 21-31 дні (днів)
| MBRB1545CTHE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MBRB1645HE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Description: DIODE SCHOTTKY 45V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MBRB2045CTHE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MBRB745HE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SBLB1640CTHE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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од. на суму грн.
| MBRB2045CTHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| SBLB1640CTHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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В кошику
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| VBUS54FD-SD1-G4-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 15VC CLP1007-FL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 45W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6.9V
Unidirectional Channels: 4
Supplier Device Package: CLP1007-FL
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.9pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-XFDFN
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5.5VWM 15VC CLP1007-FL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 45W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6.9V
Unidirectional Channels: 4
Supplier Device Package: CLP1007-FL
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.9pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| VBUS54FD-SD1-G4-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 15VC CLP1007-FL
Power Line Protection: No
Power - Peak Pulse: 45W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6.9V
Unidirectional Channels: 4
Supplier Device Package: CLP1007-FL
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.9pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-XFDFN
Packaging: Cut Tape (CT)
Part Status: Active
Description: TVS DIODE 5.5VWM 15VC CLP1007-FL
Power Line Protection: No
Power - Peak Pulse: 45W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6.9V
Unidirectional Channels: 4
Supplier Device Package: CLP1007-FL
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.9pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-XFDFN
Packaging: Cut Tape (CT)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MBR2060CT-E3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
товару немає в наявності
В кошику
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| 1.5KE180AL-83E3/72 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC 1.5KE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 246V
Voltage - Breakdown (Min): 171V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 154V
Current - Peak Pulse (10/1000µs): 6.1A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
Description: TVS DIODE 154VWM 246VC 1.5KE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 246V
Voltage - Breakdown (Min): 171V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 154V
Current - Peak Pulse (10/1000µs): 6.1A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE75AL-407E3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 1500W 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Supplier Device Package: 1.5KE
Part Status: Obsolete
Description: TVS DIODE 1500W 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Supplier Device Package: 1.5KE
Part Status: Obsolete
товару немає в наявності
В кошику
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| 1.5KE75AL407HE3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 1500W 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Supplier Device Package: 1.5KE
Part Status: Obsolete
Description: TVS DIODE 1500W 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Supplier Device Package: 1.5KE
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 1N3957GP-M3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику
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| 1N4001GPE-M3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 1N4003GPE-M3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику
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| 1N4005GPE-M3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
товару немає в наявності
В кошику
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| 1N4248GP-M3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику
од. на суму грн.
| 1N4935GP-M3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику
од. на суму грн.
| 1N4942GP-M3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику
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| BY252GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Description: DIODE STANDARD 400V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
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В кошику
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| BY253GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
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| DGP30L-5705E3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO201AD
Packaging: Tape & Box (TB)
Description: DIODE GEN PURPOSE DO201AD
Packaging: Tape & Box (TB)
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В кошику
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| EGP10G-M3S/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| EGP30A-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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| EGP50GL-005E3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE GP20
Packaging: Tape & Box (TB)
Part Status: Obsolete
Description: DIODE GEN PURPOSE GP20
Packaging: Tape & Box (TB)
Part Status: Obsolete
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| EGP50GL-6630E3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE GP20
Packaging: Tape & Box (TB)
Part Status: Obsolete
Description: DIODE GEN PURPOSE GP20
Packaging: Tape & Box (TB)
Part Status: Obsolete
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| GP10GE-6329M3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| GP10TE-M3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Description: DIODE GEN PURP 1.3KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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| RGP10G-6038M3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| RGP10J-5025M3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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| RGP10J-7008M3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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| RGP10M-5010E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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| RGP10M-7008E3/72 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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| RGP15J-5012E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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| RGP15JL-6307E3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
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| RGP30ML-6884E3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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| RGP30ML-6888E3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
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| SBYV26C-5001M3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
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| TVR06J-5700E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 600MA DO204AL
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 600mA
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: DIODE GP 600V 600MA DO204AL
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 600mA
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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| TVR06J-5700M3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
Description: DIODE GEN PURPOSE DO-204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
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| TVR10G-5700E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
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| TVR10G-5701E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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| TVR10G-5702E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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| 1.5KE400A-803E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 342VWM 548VC 1.5KE
Qualification: AEC-Q101
Grade: Automotive
Current - Peak Pulse (10/1000µs): 2.7A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 548V
Voltage - Breakdown (Min): 380V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 342V
Description: TVS DIODE 342VWM 548VC 1.5KE
Qualification: AEC-Q101
Grade: Automotive
Current - Peak Pulse (10/1000µs): 2.7A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 548V
Voltage - Breakdown (Min): 380V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 342V
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE400A-804E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 342VWM 548VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 342VWM 548VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 1N3957GP-M3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
товару немає в наявності
В кошику
од. на суму грн.














